4. User Manual – Part 1
Contents
1. F3 AICP process Shift F5 AICP process F5 MACS Oper ator Station 7743 Philips Research Lab Administration mode Exit Edit Logi Mimic Control Window Help Process contri ICP E Sequencer 0 00 05 ae Lok To g TE mT min E Jt ie 3 NESE mt soon Transfer load Left cassete Bret side view User requests Machine actions Sequencer status Fig 2 Full monitor screen with Mimic and Control windows With the Mimic windows Plan view and Side view the user can trace down the position of wafers follow the actions of the carousel and the MACS robot that transfer wafers between carousel load lock and process chamber and between cassette deck and carousel The user may also check pressure readings The Control window Transfer Load allows manual control over the carousel and the cassette load station The Sequencer is for automated operation Process control is enabled by the Control window ICP process control Finally running processes may be viewed by a Mimic window ICP process view although this option has little extra value all information is already displayed in the ICP process con trol window albeit in a less graphical way Usually this mimic window is switched off Philips Research MiPlaza TL Company Restricted Operation manual E13 MiPlaza Pla a am nm r E lt a m e a Document nr EriHeu 20110410 1V1 Page nr 5 Document Operation Manual STS ASE deep S2. al low the lid to open up upon reaching atmospheric pressure 4 4 4 At the very end with all wafers removed from the system close the lid wait for carousel mapping and leave the carousel under vacuum condition by pressing the Pump but ton in the carousel quadrant gt Please don t forget to fill in the log book on the desk near the etch tool Philips Research MiPlaza TL Company Restricted Operation manual E13 MiPlaza a a e m es Document nr EriHeu 20110410 1V1 Page nr 10 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 5 User Manual Part 2 Automated Control mode The Sequencer is for automated process runs The sequencer takes over from the user almost all of the manual actions described in the previous sections The sequence will take care of water transfer and selects and runs the programmed etch recipe s The user puts all information required by the etch tool into a procedure called Sequence saves the sequence under some name for later use and sets the process times in the recipes that are involved in the that specific sequence Before you start loading any wafers take notice of the wafer constraints mentioned in Sect 6 Ensure there are no wafers present in process chamber and carousel 5 1 Wafer loading 5 1 1 Ensure that the carousel lid is closed and the latch of the lid is fixed an
3. ready for loading The wafer will then be transferred to the process chamber and automatically clamped down onto the electrostatic chuck 4 2 Select recipe and check change process time 4 2 1 Press the Select button in the Process Control window Fig 5 and select the right rec ipe from the pop up menu 4 2 2 Confirm your selection with Select in the pop up menu The system will prepare the chamber for processing purge and pump chamber coloured in blue and then will wait for further commands If you accidentally press Process in the pop up menu the selected process will start If you don t like this to happen immediately press Abort in the process control window and the process will stop and switch to stand by 4 2 3 Press Recipe to enter the Recipe Editor Fig 6 or alternatively Edit Process Editor 4 2 4 In the recipe ignore Gas line Purge and Standby Step and only select process step s Ignore all tabs except for the one called General and check the process time in that tab If necessary change the process time or in case of a Bosch process the number of cycles gt No other parameters than these two may be changed by users Philips Research MiPlaza TL Company Restricted Operation manual E13 MiPlaza Document nr EriHeu 20110410 1V1 Page nr 7 Document Operation Manual STS ASE deep Si etch Epcode_ E13 Administrator Documents Administrator TFF Date 10 04 2011 Most recipes are Bosch process
4. up the process will automatically end with the Standby step preparing the process chamber for wafer transfer Philips Research MiPlaza TL Company Restricted Operation manual E13 Document nr EriHeu 20110410 1V1 Page nr 9 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 4 4 Wafer unloading 4 4 1 After processing the first wafer press the Unload button in the Carousel quadrant of the Transfer Load window A background recipe called Dechuck will be activated automatically It will take some time to unclamp the wafer Subsequently a short 5s argon plasma will be applied to discharge the water After that the wafer will be returned to the Carousel load lock 4 4 2 If a second wafer is awaiting processing in the carousel load that wafer and start the process run before venting the carousel Actually the wafer logistics are free to the user Either the load lock is vented after process ing two wafers or vented after loading the second one into the process chamber The latter procedure is time saving when many wafers have to be processed as the first processed wafer can be exchanged for a fresh third one while the second one is being processed The process chamber is processing almost continuously then without time waisted for load lock vent and pump down 4 4 3 To open up the carousel press Vent in the Transfer Load window The latch will
5. wafer flats should face the centre of the carousel plate like indicated by the black lines engraved into the plate 4 1 2c Close the lid and keep it closed shortly after closure the carousel plate will turn until a wafer sensor has mapped the position s of the wafer s After some time the wafer informa tion in the Plan view and Side view windows will be updated 4 1 2d Optionally the carousel may be pumped down by activating Pump but this step may be skipped as it will automatically be carried out upon loading wafers to the process chamber Philips Research MiPlaza TL Company Restricted Operation manual E13 MiPlaza lt r e ra Document nr EriHeu 20110410 1V1 Page nr 6 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 4 1 2e Activate the sub window Slot and you will get the choice to select a wafer in slot 1 or slot 2 Enter the preferred slot number and press Enter Slot numbers are engraved in the top right corner visible and the low left corner invisible of the carousel plate Transfer load Fig 4 The lower right quadrant of the Transfer Load window called Carousel for manual loading of wafers 4 1 2f Press Load to transfer the selected wafer to the process chamber The carousel will be pumped down to a setpoint of 300 mTorr a turbo pump then speeds up the pumping process and at 4 0E 4 Torr the carousel is
6. 410 1V1 Page nr 12 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 5 2 5 Set the right process time s in the recipe s invoked in the selected sequence The simplest way is to open the recipe editor by pressing Edit Recipe editor in the main menu bar open the recipe s set and save the recipe s following the steps in Sect 4 2 MACS Sequence Editor Administration mode SE File Edit Help Fig 12 Sequence Editor window 5 2 6 Ensure that the machine doesn t contain wafers in carousel and process chamber and is idle for example not busy with carousel mapping after lid closure Press the Run button in the sequencer to run a sequence Confirm that you like to use cas settes already loaded in the cassette station At any time do NOT open the doors wait until the sequence has ended One by one the robot will map the left and right cassette first After that the sequencer will guide all wafers from the left cassette through the etch tool and bring them back to the right cassette after processing A sequence consists of a automated line by line command structure However manual inter vention is still possible at every moment The button Hold in the Sequencer control win dow will interrupt a sequence in that sense that a running action transfer or process will be finished before the actual interruption will take place The user is then as
7. Document nr EriHeu 20110410 1V1 Page nr 0 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 Author Eric van den Heuvel Surface Technology Systems Advanced Silicon Etching 0 Table of contents 0 1 fA T DEOR ON I e E E E se eesacs 0 Changes compared to previous Versions ccccccessssssseececcecceeeeeseeeceeseesaeeeeeeeeceeeeeeeseeenees 1 SAIC EY EE E A E A E E E 2 ZA Reece eon ce ce ere osc ome seer A E E E 2 VA E E e E E AE EEE EE E AE EEA 2 OSE a T E EE E AEEA E E A E E EA 3 3 1 Generalin orma ON eser E 3 32 Mimic AN SC ONO Windows eoseid anei e e sabes iaren 3 User Manual Part 1 Manual Control mode sseessseeeennssssssseeeressssssseseressssssseeeressssss 5 4d Wair MO ACIS and LPAI GTCE secin esn eA SEEE ENERETT 5 4 2 Select recipe and check change process time cccccssssssesecceeeeceaeeeessececeeeeeeeeeesees 6 Lo RUA T O C6 e E E E 8 4A Wy SE LAVIN hao stan erretonone uate cbatoce neue vetsarenuneosessalsasscastonesesatean E EE ENEO 9 User Manual Part 2 Automated Control mode i ceeccceecceceeeeeeseseeeeeeeeeeeaaeeenees 10 WY ORIN arate chaste se E E TS 10 I CCM ICS Oe AOI a E E 11 SU MAS PC SUNN So e E 13 34 SENT AM advanced CCQUCN CC serinin a PaE E ITEE a A EAE Ei 15 RUGS amp Rebula oiS sasiaren EE EE E Ea 17 6 1 Substrates and Handini seraidone eie E 17 E 6111 011100 E E E E E S E E E T
8. T 18 FSC HOM a O ee E E EE E EN 19 Philips Research MiPlaza TL Company Restricted Operation manual E13 Plaza EAE t d i Document nr EriHeu 20110410 1V1 Page nr 1 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 1 Changes compared to previous versions Date Page New ver Description ber 10 04 2011 Combined version of documents RWV 010 040 013 01 2006 and User Manual 2007 Philips Research MiPlaza TL Company Restricted Operation manual E13 Document nr EriHeu 20110410 1V1 Page nr 2 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 201110 2 Safety 2 1 General Emergency Off buttons The tool is equiped with a number of emergency off buttons Eclo w that can be pressed in case of potentially dangerous situations These switches will shut off the electrical power supply to the tool Additionally local switches are available to shut off the electrical power supplied to the tool AND the local power sockets Electricity Radiation The equipment satisfies all usual safety regulations and there is no danger when the tool is used properly However unsafe situations are present if metal covers have deliberately been removed or cables disconnected then there is danger for high power electrical shock 220 380V or high power RF radiation 13 56MHz 380
9. a TL Company Restricted Operation manual E13 Plaza y i tf Document nr EriHeu 20110410 1V1 Pagenr 18 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 6 1 10 Always consult the machine owner in case of specialties Through wafer etch runs Thin wafers Wafer pieces on top of carrier wafers Silicon on glass or on other non conductive materials 6 2 Conditioning Before processing your wafers conditioning of the process chamber is an option run your selected process with a dummy wafer for a certain period of time Conditioning of the tool is not a real necessity but recommended for better stability and reproducibility of the given rec ipe Dummy wafers should preferentially be coated with a thick layer of resist or silicon oxide Note that in general the amount of material exposed to the plasma influences etch rates Etch rates tend to go down as open surface area increases Therefore it is recommended to do a depth calibration run in advance using an identical dummy wafer Fig 18 Lift pin positions in the process chamber 3 spots at 120 degrees on a 30mm diameter circle Philips Research MiPlaza TL Company Restricted Operation manual E13 Document nr EriHeu 20110410 1V1 Pagenr 19 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 7 I
10. and edit one of your own lists or to make a New one In both cases the Edit process list window Fig 17 will show up with all available recipes listed on the right hand side Edit process list for ICP Process list _ Available CLEANESC lt k d CLEANESC TIENE end Save Saveas _ Fig 17 Edit process list window 5 4 4 With the Add and Remove buttons compose the list for your wafers The number of lines in the list should be identical to the number of wafers to be processed For wafers with identical processing use the same recipe more than once in the list For wafers to be processed with the same recipe but different etch times make a copy or copies of that recipe first before you create a list Each copy should get a different name and a different process time Philips Research MiPlaza TL Company Restricted Operation manual E13 Document nr EriHeu 20110410 1V1 Page nr 16 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 Although possible it is not recommended to make very complex sequences composed of a mix of lists and recipes together one line containing one list should do 5 4 5 Save your list using the buttons Save or Save as In case of a new list the Save list as window Fig 6b will show up Give your list a name 8 characters maximum 5 4 6 In the empty sequence Sequence editor window Fig 14 press the Edit
11. arch MiPlaza TL Company Restricted Operation manual E13 Document nr EriHeu 20110410 1V1 Pagenr 14 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 If you made a mistake or like to replace an existing step select that line in the Sequence edi tor select a recipe in the Edit step and Step recipe windows again and use Change instead of Insert If you like wafers to be processed by two or more recipes sequentially add more steps to the Sequence Editor window All process steps will then be carried out on each individual wafer before the next one is loaded to the process chamber Step 1 recipe Edit step 1 ic Scioct__ Clean recipe Interval ee emmi Fig 15a left Edit step window Fig 15b right Step recipe window 5 3 5 In the Sequence Editor window Fig 14 check or adjust the batch size the number of waters to be processed It should correspond to the number of wafers present in the left cas sette Note that empty slots in the cassette even between wafers will be ignored 5 3 6 In the Sequence editor window select the most convenient Sequencer mode Continuous mode means that wafers will be loaded to the carousel one at a time such that a processed wafer say 5 is exchanged for a fresh one 7 while 6 is being processed Batch mode means that two wafers are loaded to the carousel both of them are processed and return
12. button now In the Edit step window Fig 5a that shows up press the Select button to select your list in the Step recipe window Fig 5b It shows recipes and lists together lists can be identified by name and extension List following the name 5 4 7 Follow the procedure described in 5 3 5 to 5 3 7 to finish the sequence Philips Research MiPlaza TL Company Restricted Operation manual E13 Document nr EriHeu 20110410 1V1 Page nr 17 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 6 Rules amp Regulations Consult the machine owner about the most suitable recipe for your application Parameters in the etch recipes are not to be changed the only exception being the total process time or in case of Bosch type recipes the number of cycles Please take notice of the following remarks about 6 1 substrates and handling 6 2 cleaning and conditioning 6 1 Substrates and handling 6 1 1 The ASE tool is for silicon etching only no other materials 6 1 2 Standard wafer size is 150mm diameter thickness 670um 200mm diameter is op tional but internal machine parts have to be swapped for that purpose The cassette robot for automated processing can handle 150mm wafers only 6 1 3 Check wafer flat orientation if not oriented properly the wafer chuck will be at tacked chemically and get damaged or even destroyed 6 1 4 Never sta
13. d secured by the black knob at its base Fig 9 The black knob should be turned and pushed in to the left The black knob is there to secure the latch in the closed position it prevents the carousel lid from opening up after venting Fig 9 The correct position left of the black knob for automated processing at the base of the latch of the carousel lid 5 1 2 Take the left cassette out of the cassette station put in your wafer s and place the cas sette back into position dock IN Take care of the right wafer orientation wrong or bad wafer orientation will result in damage to the wafer chuck inside the etch chamber electrostatic chuck has a flat as well The main flat should be oriented as indicated in the sketch lt horizontal flat at the bottom of the cassette _ Separate from the etch tool a wafer flat aligner Fig 0 rotating spindle is available to orient all wafers present in a cassette in one single action with the position switch choose the down orientation press run and wait Philips Research MiPlaza TL Company Restricted Operation manual E13 MiPlaza Document nr EriHeu 20110410 1V1 Page nr 11 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 Always check the wafer orientation after using this device the aligner is not perfect and sometimes fails especially with short flat
14. ed to the carousel There is no processing during the exchange of the processed waters for a set of two fresh ones Batch mode is a good option for short etch runs couple of minutes only 5 3 7 Save your settings via File save and leave the Sequence Editor window via File exit Recommendation default settings shouldn t be changed Obligatory default settings in the Sequence editor are Load from Left cassette Unload to Right cassette Batch size is expressed in number of wafers not in number of batches Philips Research MiPlaza TL Company Restricted Operation manual E13 MiPlaza Document nr EriHeu 20110410 1V1 Page nr 15 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 5 4 Set up an advanced sequence Individual wafer addressing is possible using Lists A list is a simple table of lines instructing the etch tool to process the 1 wafer with the recipe in line 1 at the top of the list the 2 wa fer with the recipe in line 2 and so on until the last wafer with the recipe in the last line in the table 5 4 1 Follow the procedure described in 5 3 1 and 5 3 2 to obtain an empty sequence 5 4 2 In the Sequence editor window Fig 14 press the Edit list button a Select ICP list window Fig 6a will show up Fig l6a Select ICP list window Fig 16b Save list as window 5 4 3 Make a choice to Select
15. es with parameter cycling each cycle including an etch step and a deposition passivation step The editor is smart and automatically rounds off the process time to a full number of cycles Process control ICP C4F8 EASE sccm SF6 BE ER sccm Oxygen 02 J sccm NF3 BD BE sccm Nitrogen N2 aaa sccm Argon Ar 0 0 0 0 sccm Coil Senetoter on 13 Sabas 13 56Mhz generator on Platen Nw omw 2a a Jz Morfe l oo ookal oo Fig 5 Process control window in stand by mode In case of a multiple step recipe it is better not to change the individual process times as they are matched by design especially in the case of activated parameter ramping ICP MIX1 SET Recipe Step Help as Temperature E ARE aa n aal stepi 1 ji Parameter Switching 5 Parameter Ramping ana oe Parameter 5 a Stabilisation mm ss Phase Process 00 07 30 hh mm ss Ramp Rate s cycle Overrun Cycles Fig 6 Recipe Editor setting process time or number of cycles gt Also be aware that recipes with active parameter ramping start and end with different parameter settings such that it is not wise to use one and the same recipe twice for the same water the result of one long etch run probably will not be the same as the result of two short etch runs with the same total etch time After the first run an etch extension recipe should be set up for the second run That extension recipe will start with well adapted parameters In that ca
16. i etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 4 User Manual Part 1 Manual Control mode In manual control mode it makes little or no sense to use the cassette load stations as they would only serve as wafer storage places Instead the carousel is the place to be for wafer manual loading and unloading Before you start loading any wafers take notice of the wafer constraints mentioned in Sect 6 4 1 Wafer loading and transfer 4 1 1 Be sure that the latch of the carousel lid is able to move freely forward and backward by checking the position of the black knob at its base Fig 3 it should be pulled out to the right and turned by 90 degrees to keep it fixed in the out position The black knob is there to secure the latch in the closed position in case of automated operation only it prevents the carousel lid from opening up after venting Fig 3 The correct position right of the black knob for manual loading at the base of the latch of the carousel lid 4 1 2 Use the quadrant at the lower right side Fig 4 of the Transfer Load window called Carousel to load wafers 4 1 2a Vent is used to get the carousel to atmospheric pressure Sometimes high pressure in dications are unrealistic but in the end the lid will open up automatically 4 1 2b Lift the lid and put one or two wafer s into the recess es in the carousel plate Take notice of the wafer orientations
17. kHz Chemical hazardous gases The process gasses SF en C4Fs are not really dangerous These gases decompose into hazard ous components when a plasma is ignited inside the process chamber Safety measures make direct exposure to these hazardous gasses highly improbable The process chamber is equiped with over pressure sensors and processing immediately stops upon sensor excitation Maintenance by qualified people only Once in a while the process chamber has to be opened in order to remove and clean the inte rior of the chamber This operation is supposed to start after a one hour oxygen plasma clean Dispite this pre clean care should be taken at opening of the system as small quantities of more or less suspicious gasses still may escape from the tool at first contact with the moist room atmosphere The chamber interior may be covered with flakes and small particles In serious Cases safety measures have to be taken wear breath protection good ventilation 2 2 Chemicals The only process gasses are sulfur hexafluoride SFe and octafluorocyclobutane Freon C318 C4Fg Helium He is used for wafer backside cooling Detailed information about these chemicals can be found in the corresponding Material Safety Data Sheets MSDS Philips Research MiPlaza TL Company Restricted Operation manual E13 Document nr EriHeu 20110410 1V1 Page nr 3 Document Operation Manual STS ASE deep Si etch Epcode E13 Administra
18. ked what to do with the next command line Continue sequence proceeds or Stop take over command by man ual control Likewise all control buttons in the Process control window are available for use just in case Finish will skip all wafers that are still positioned in the left cassette The sequence will finish all wafers it started with and bring them back to the right cassette Any abort command will obstruct sequence progress In that case the user should stop the sequence and proceed by manual control to remove all wafers from the etch tool When the sequencer is used automated wafer numbering produces s numbers for exam ple s006 5 means wafer from cassette number 006 slot number 5 This number is useful for data retrieval in the data logging system 5 2 7 At the very end leave the carousel under vacuum by pressing Pump in the carousel quadrant of the Transfer Load window gt Please don t forget to fill in the log book on the desk near the etch tool Philips Research MiPlaza TL Company Restricted Operation manual E13 MiPlaza as a a x amp gt m e a Document nr EriHeu 20110410 1V1 Page nr 13 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 5 3 Set up a simple sequence The simplest sequence is composed of one or more line s with the name s of the recipe s that the tool will automaticall
19. nstruction and test An introduction to the tool is given by the machine owner Normally the instruction will take about one hour First the major parts and possibilities of the machine will be explained After this the operating instructions will be given Subsequently the potential user will independent ly operate the system as a test If successful the user is authorized to use the tool and his her name will be added to the users list in the equipment reservation tool If it turns out that users operate the etch tool with very large time intervals it becomes ques tionable whether those users still know well enough how to operate the system properly In that case the tool owner may consider to contact those persons and withdraw their authoriza tions Philips Research MiPlaza TL Company Restricted Operation manual E13
20. rator on 13 56Mhz l T soo sm Ew ov MET Fig 7 Detail of the left upper corner of the expanded Process Control window when process is started in switching mode left in ramping mode middle and in switching ramping mode right If switching and ramping are absent the lay out looks like Fig 5 Each process run starts with a Standby step in which the process chamber is prepared for processing the process chamber colours blue on screen then Before processing the helium leak up rate is checked pump line closes check takes 10 30s pump line opens If the leak up rate is too high gt 5 or 6 sccm min Fig S the wafer is not accepted for processing alarm The wafer may be dirty on the back side or its flatness may be poor e g curvature bow caused by stress In that case always abort the process by press ing Abort and remove the wafer from the chamber Fig 8 Helium Leak up rate 4 3 2 As soon as the plasma ignites the process chamber colours purple on screen If really necessary the process may be interrupted by pressing Hold plasma off and continued later by pressing Resume plasma on again but that procedure is exceptional and it 1s not recom mendable to do so It is also possible to end a step by pressing Skip The process will continue with the next process step if present in the recipe or return to Standby step Again there must be a good reason to do so 4 3 3 When process time is
21. rt a conditioning run Sect 6 2 without a dummy wafer in the etch cham ber 6 1 5 Use resist and or silicon oxide as mask materials only metals are not allowed 6 1 6 At the end of the etch process avoid long exposure of metal stop layers to the plasma as much as possible it will degrade the process chamber performance 6 1 7 For very deep etching silicon oxide is the prescribed mask materials if necessary backed up by resist at the wafer edge it gives superior protection suppresses edge disintegra tion and the generation of particles on the chuck 6 1 8 In case of double sided processing realize that it is very well possible that wafers may not be handled by the robot arm in the atmospheric cassette station structures on the wafer backside may be a problem for the vacuum clamping system on the arm If so automated processing is impossible manual loading via the carousel the only alternative 6 1 9 In case of double sided processing and or through wafer etch runs realize that the wafer is lifted by 3 pins in the process chamber Fig 8 wafer handling shouldn t be ham pered by backside structures or weak spots on the wafer after deep etching e g holes The water and or the handling mechanism will get damaged Although the lift pins are slender 2mm diameter take at least 5mm diameter structure free areas around the pin positions based on an estimated tolerance on wafer placement accuracy Philips Research MiPlaz
22. s or thin wafers If necessary repeat the procedure or make corrections manually Fig 10 Wafer flat aligner for the STS ASE tool select the down position 5 1 3 Ensure that an empty cassette is positioned on the right side of the cassette station dock OUT 5 1 4 Close the cassette doors 5 2 Sequence operation 5 2 1 In the Sequencer control window Fig 11 press the Open button and select your se quence from the pop up list This sequence will then appear in the text box in the upper left hand corner of the sequencer control window If you don t have a sequence set up yet go to Sect 5 3 or 5 4 first to make a new sequence Sequencer Description Batch Started Complete a 5 wafes a Vien Next cassette ID Step Status E he SS SS SSS Fig 11 Sequencer control window 5 2 2 Check the sequence by pressing View Alternatively you may press Edit Sequence editor in the main menu bar press File Open and select the right sequence 5 2 3 In the Sequence Editor window Fig 12 check or adjust the batch size the number of waters to be processed it should correspond to the number of wafers present in the left cas sette Note that empty slots in the cassette even between wafers will be ignored 5 2 4 Save your settings via File save and leave the Sequence Editor window via File exit Philips Research MiPlaza TL Company Restricted Operation manual E13 MiPlaza Document nr EriHeu 20110
23. se consult the equipment owner gt Always consult the machine owner if you like to change more than just the process time or if you like to make a new recipe 4 2 5 Save the recipe before closing the editor either by Recipe save and Recipe close or by the using the corresponding icons Philips Research MiPlaza TL Company Restricted Operation manual E13 MiPlaza yf w x 22 Document nr EriHeu 20110410 1V1 Page nr 8 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 4 3 Run an etch process After loading a wafer Sect 4 1 and selection of the right recipe and adjustment of the proc ess time or number of cycles Sect 4 2 an etch run can be carried out from the Process Con trol window 4 3 1 Start the process by pressing Process Fig 5 The Process Control window will expand and change its lay out now Fig 7 in order to dis play all details about the process parameters BWB set values RST actual values Process control ICP Process control ICP Process control ICP Gas Flows Gas Flows Gas Flows C4F8 C4F8 sccm Oxygen 02 iy 1 sccm ft 260 00 Nitrogen N2 ED E sccm Coil generator on 13 56Mhz pit s miw aT w 200 Dee O 0m C4F8 sccm sccm eol oo og Oxygen 02 sccm Oxygen 02 sccm rt 14 0 Coil generator on 13 56Mhz ___Nitosen N2 MME secm E ET v Aw Coil gene
24. the etch rate typically is 0 1 2um cycle depending on the selected etch recipe and the etch mask lay out Although there are a number of standard etch recipes each of them aimed at a certain task it is not uncommon that recipes have to be tweeked in order to get the desired etch result Consult the machine owner about the most suitable recipe for your application 3 2 Mimic and control windows The MACS Operator Station Multiplex Atmospheric Cassette System 1s displayed on the monitor as a composition of windows If the MACS Operator Station is not visible on desktop move down to pop up task bar Fig and click on MACS Operator Station or its icon left On the task bar NEVER close Data Exchange PMstart Al MACS Operator Station S8Data Exchange Fig 1 Task bar There are two kinds of windows Fig 2 Mimic windows containing information only and Control windows allowing user interaction with the tool by means of command buttons Philips Research MiPlaza TL Company Restricted Operation manual E13 Document nr EriHeu 20110410 1V1 Page nr 4 Document Operation Manual STS ASE deep Si etch Epcode E13 Administrator Documents Administrator TFF Date 10 04 2011 MACS Operator Station 27743 Philips Resear Exit Edit Log Control Window Help Exit Edit Log Mimic window Help Plan view Shift F2 E Sequencer Side view Shift F3 Transfer MACS Operator Station 27743 Philips Rese
25. tor Documents Administrator TFF Date 10 04 2011 3 User Manual 3 1 General information The lt STS ASE gt deep Si etcher is equipped with a single process chamber Wafers can be dry etched using fluorine containing process gasses The official name Advanced Silicon Etch ASE indicates that the tool is limited to the etching of silicon only and this is done according to a special procedure see below All processing is done in a closed vacuum system and a robots takes care of wafer transportation between a load lock carousel or a cassette station to the process chamber The etch tool is an ICP reactor Inductively Coupled Plasma in which reactive species radi cals and ions are generated at high rates by an ICP source and the intensity of ion bombard ment on the wafer can be regulated by the application of an RF bias Vertical etch profiles can be realized following the so called Bosch process alternatingly the wafer is exposed to an SF6 plasma and a C4F plasma In the first short part of the cycle silicon is etched in a more or less isotropic way whereas in the second short part the etched profile is covered by a passiva tion layer In the etch part of the next cycle this passivation layer is opened preferentially at the bottom mainly by ion bombardment and etching starts again By repetition of the etch passivation cycle the etch proceeds layer by layer downwards into the silicon wafer A single cycles typically takes 8 20s and
26. y select to process the wafers All wafers will be processed in the same way for each wafer the sequence starts with the process in the first line then if present it takes the process in the second line and so on until the process in the last line has been finished next wafer etcetera The most common sequences have just one line with one recipe only 5 3 1 The easiest way to make a new sequence is to take an existing sequence save it under a new name and edit the new sequence Press Open in the Sequencer window Fig 3 and select any existing sequence In the same window press View to activate the Sequence Editor Fig 14 Via File Save save the existing sequence with a new name 8 characters maximum Sequencer Batch Started Complete a e Naming mode raan cassette Fi ig 13 window 5 3 2 Select the step s present in the Sequence Editor and delete them one by one using the Delete button MACS Sequence Editor Administration mode e Description a Es eb ths Editi eee Batch oe mae Fig 14 Sequence Editor 5 3 3 Press the Edit button In the Edit step window Fig 15a press the Select button a Step recipe window will appear Fig 5b 5 3 4 Select your recipe and press Select in the Step recipe window Your recipe will appear in the Edit step window Press Insert to enter the recipe into the Sequence editor window it will appear above the line selected in that window Philips Rese
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