TIDU671 - Texas Instruments
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1. 16 bit RISC architecture up to 24 MHz clock Wide supply voltage range 2 to 3 6 V Design Overview DMA 3 Channel ADC10 B 10 Bit 200KSPS 8 channels 6 ext 2 int e Optimized ultra low power modes 81 4 pA MHz in active and 320 nA in shutdown LPM4 5 Ultra low power ferroelectric RAM e 16 KB Nonvolatile Memory Ultra low power Writes Fast write at 125 ns per word 16 KB in 1 ms Built in error coding and correction ECC and MPU Universal memory Program data storage e 1015 write cycle endurance Intelligent digital peripherals e 32 bit hardware multiplier MPY Channel internal DMA RTC with calendar and alarm functions 16 bit cyclic redundancy checker CRC e High performance analog Enhanced serial communication TIDU671 March 2015 Submit Documentation Feedback Hall Effect Proximity Sensor With IO Link Design Guide 17 Copyright 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS Design Overview www ti com 3 1 3 DRV5013 2 5 to 38 V Regulated Supply Temperature Compensation C2 Optional Jooue 1esJO i Gate Drive Reference Figure 20 DRV5013 Block Diagram DRV5013 key features Up to 30 mA current sink Digital bipolar latch hall sensor Fast power on 35 us Superior temperature stability Small package and footprint Bop 10 over temperature e Surface mount 3 terminal SOT 23 High sensitivity options Bo2. Parameter Generic 04 TIDA 00240 TMG IO Link Device Tool V4 0 TIDA 00340 at TMG USB IO Link Master V2 SE 2 Port 0 Pin 4 Topology Process Data In SWITCH ON false amp TMG IO Link Device Tool V4 0 TIDA 00340 at TMG USB IO Link Master V2 SE 2 Port 0 Pin c o File Options Help Logged in as Specialist T TMG USB IO Link Master V2 SE 2 11 Port 0 Pin 4 ADS1220 SK 2 Port 0 Pin 4 TIDA 00340 Topology t 42 gt blockwritemode B USB Process Data i 7 um Er COM12 TMG USB IO Link Master V Common Identification Observation Paremeter Generic Le pao Value Unit Process Data In f SWiTCHON true FEN Ly MG 1E amon Figure 26 IO Link Master GUI Showing Proximity Sensor Status 24 Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS www ti com Test Results 5 Test Results 5 1 Power Consumption in SIO Mode The power consumption of the system is plotted in Figure 27 where the L voltage was varied between 18 and 33 V Two curves are visible one when the LED was OFF equivalent to the field has been below BOPof DRV5013 and LED ON when the field h
3. and north pole of the magnet When equally distanced the sensor will see a zero field and as soon as the magnet moves one pole will get closer to the Hall effect sensor and the other pole will move away creating a resulting field either positive or negative Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS www ti com System Description 2 3 3 Hall Effect Sensor Sensitive Usage While Hall effect sensing now has a broad range of usage in the industry the goal of this section is to illustrate a few usual applications for engineers needing to design such systems for a first time Figure 12 is an example of a float sensing through a ring magnet When the float part where the hall sensor is mounted is in the middle of the ring magnet the flux will be nill allowing the sensor to detect a level very accurately Level Figure 12 Float Sensing Through a Ring Magnet Figure 13 is an example of linear sensing When the Hall sensor that moves along the axis d is inside the magnets the sensor will see a null field Figure 14 is an example of angle sensing Figure 13 Example of Linear Sensing Figure 14 Example of Angle Sensing TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 13 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated I TEXAS INST
4. before placing orders and should verify that such information is current and complete All semiconductor products are sold subject to Tl s terms and conditions of sale supplied at the time of order acknowledgment TI warrants performance of its components to the specifications applicable at the time of sale in accordance with the warranty in Tl s terms and conditions of sale of semiconductor products Testing and other quality control techniques for TI components are used to the extent TI deems necessary to support this warranty Except where mandated by applicable law testing of all parameters of each component is not necessarily performed TI assumes no liability for applications assistance or the design of Buyers products Buyers are responsible for their products and applications using Tl components To minimize the risks associated with Buyers products and applications Buyers should provide adequate design and operating safeguards Reproduction of significant portions of TI information in TI data books data sheets or reference designs is permissible only if reproduction is without alteration and is accompanied by all associated warranties conditions limitations and notices TI is not responsible or liable for such altered documentation Information of third parties may be subject to additional restrictions Buyer acknowledges and agrees that it is solely responsible for compliance with all legal regulatory and safety related requirements c
5. is the newly defined dynamic mode for bi directional communication SDCI defined by 1 A good overview is provided by Figure 3 combined from 1 and 5 Pin Signal Definition Standard SIO 2 Q Not connected DI or IEC 61131 2 DO IE 4 8 38 4 230 4 kbps 3 IEC 61131 2 4 Switching signal DI IEC 61131 2 U UUU SIO C Coded switching IEC 61131 9 COM1 COM2 COM3 Figure 3 SIO versus SDCI or IEC61131 9 versus IEC61131 2 The switch between SIO mode and SDCI is master initiated The master issues a wake up command to the device which consists in shorting the 80 us CQ line with at least 500 mA IQPKHM 1 The device must be ready for communication in less than 500 us TREN After the wake up request WURQ the master waits for the device to be enabled for TREN 1 The master then tries to identify the highest transmission rate supported by the device by sending a test message M sequence type 0 See Section 2 2 3 2 for details Following the wake up attempt should communication fail the device switches back to SIO mode within a time window of 60 to 300 ms TDSIO 1 If communication is successful it occurs on a frame basis 2 2 3 1 Physical Layer 2 2 3 1 1 Handshake The master issues a wake up command to the device which consists in shorting the CQ line for 80 us with at least 500 mA IQPKHM 1 The device must be ready for communication in less than 500 us TREN The short from the
6. master side N24 N24 port class B Option 2 Reference to the extra power supply port Class B NOTE M12 is always a 5 pin version on the master side female Class A Male Device M5 3 1 4 N Female Master 7 M 1 M5 Used for this project Class A 2 4 f N 1 d 3 M12 connectors M8 are A coded according to IEC 61076 2 101 M8 Figure 2 M12 4 Pin Layout According to O Link Interface and System Specification v1 1 2 1 the current project is only using the port Class A definition Cables are also specified by O Link Interface and System Specification v1 1 2 with a maximum length of 20 m and associated maximum resistance and capacitance 2 2 2 IO Link Device Power The IO Link device Class A can draw its power from the L line and is only allowed to draw up to 200 mA from a voltage which varies between 18 and 30 V The IO Link device must be functional less than 300 ms after the supply passes the 18 V threshold 1 4 Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS www ti com System Description 2 2 3 10 Link Communication Layer The IO Link communication can be seen as having two modes The first mode is a back up quasi static mode that ensures backward compatibility with standard I O SIO mode specified in IEC61131 2 5 The second mode
7. responsible for compliance with all legal and regulatory requirements in connection with such use TI has specifically designated certain components as meeting ISO TS16949 requirements mainly for automotive use In any case of use of non designated products TI will not be responsible for any failure to meet ISO TS16949 Mailing Address Texas Instruments Post Office Box 655303 Dallas Texas 75265 Copyright O 2015 Texas Instruments Incorporated
8. section carefully The SN65HVD101 integrates a linear voltage regulator which supplies 3 3 V to the IO Link demo board if a voltage in the range of 9 to 30 V is supplied to L Normally the MSP430FR5738 is powered from this 3 3 V If this local 3 3 V supply from the SN65HVD101 is used during debug make sure the VCC Target pin from the debugger interface is connected to VCC If there is no local power and power from the debugger interface is used make sure the VCC Tool pin from the debugger interface is connected to VCC and disconnect the VCC Target pin see Figure 22 Vec A MSP430 4 Vec B VeclAVce DVec M 7TN oT 47 kQ JTAG mu VCC TOOL TDO TDI e RST NMI SBWTDIO VCC TARGET TCK GND TEST SBWTCK zai Vs AV DV Figure 22 Signal Connections for 2 Wire JTAG Communication Spy Bi Wire View From Separate Debugger Interface Board 20 Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS www ti com Test Setup 4 Test Setup 4 1 Test General Consideration The device under test DUT is placed unless otherwise stated at room temperature in a Helmholtz coil Figure 23 The coil s homogeneity of the field within a 4x4x4 mm cube in the center on the coils is within 0 6 The coil was characterized by the manufacturer over temp wit
9. voltage CQ2 If the CQ2 Cqmax Threshold in our case we set the Threshold to 5 V consider that the BOP is between B2 and Bmax so we set Vmin to V2 9 Otherwise set Vmax to V2 10 Start again from Step 6 until Vmin Vmax lt TargetAccuracy In this case it was set to 0 01 which corresponds to an accuracy on the BxP of 0 01 10 x 6 0 006 mT 0 x 9900 TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 21 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated I TEXAS INSTRUMENTS Test Setup www ti com 44 System Setup 4 4 1 Hardware and Software For the initial setup the following hardware and software is required e TIDA 00340 IO Link stack including application firmware contact TMG e USB IO Link Master here TMG USB IO Link Master V2 SE GUI for USB IO Link Master here TMG IO LINK Device Tool V4 0 IODD contact TMG M12 cable female male Figure 24 Setup 4 4 2 Software Installation Please refer to the user manual of the chosen USB IO Link Master for further details on its software installation and how to import the IO Device Description IODD folder In the following steps the USB IO Link Master V2 SE from TMG was used After the installation of the software which is delivered along with the hardware the user manual is available It describes the steps how to import the IODD 22 Hall Effect Proximity Se
10. 0 0 03 i eo 1 A Jj j TYP 4 PLC A 0 10 18076 y 210 5 9 M12 0 x 1 0 3 1 y R4 40 010 0 Y 2 55 0 10 I 5 5 0 2 P 729 L NOTE 2 Sealing face NOTE 1 Pin identification numbering is not necessary NOTE 2 For a provisional period the use of 1 2 20UNF 2A is permissible as an alternative to M12 on a c proximity switches NOTE 3 The protective earth pin shall be omitted for class Il proximity switches Figure 1 M12 2 4 Pin Integral Connector Defined by IEC 60947 5 2 TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 3 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated System Description 1 TEXAS INSTRUMENTS www ti com The electrical connections are described in Table 2 and shown in Figure 2 both extracted from O Link Interface and System Specification v1 1 2 1 Table 2 M12 4 Pin Assisgnments PIN SIGNAL DESTINATION REMARK 1 L Power supply See Table 7 from source 1 NC DI DO port Option 1 NC not connected 2 Q class A Option 2 DI P24 P24 port class B Option 3 DI then configured DO p Option 4 Extra power supply for power devices port Class B 3 L Power supply See Table 7 from source 1 Standard I O mode DI DO or SDCI 4 ca SIO SDCI See Table 6 from source 1 for electrical characteristics of DO 5 NC NC port class A Option 1 Shall not be connected on the
11. 5 Submit Documentation Feedback 1 TEXAS INSTRUMENTS www ti com System Description 2 2 9 8 Application Layer Once established the master can then access the structure and services of the device application layer as illustrated by Figure 10 Technology specific application technology parameter diagnosis process data Parameter Manager PM Data Storage DS Event Dispatcher ED Process Data Exchange PDE E 5 s 8 3 e ne E la Q 8 9 S D e a SIO ef P T A 7 amp DI DO l l l a a l z x Ed x z z lt x m nep yoy cl el 8 On request Data m Z 8 8 2l 2 objects TD o S 3 8 2 2 E a 6 6 3 8 8 8 a o 9j 9 2 9 9 3 p a Y D i aw x S 3 3 8 8 z 28 S l 8 n LA yp lu PE Z oo S i d e T YS 22 of uj ai B 6 olal o o o Jel i NR 4 ala a a aaja Or a aja a a On request Data Process Data handler handler o E seater RAN oer EA see eee at fe eed teri DL Read 4 p DL Write a Device l System p y DL mode MHinfo Missed manage handler ment handler SIO PL SetMode req PL WakeUp ind PL Transfer ind M PL Transfer req DI DO Mode switch Wake up Coded switching Physical layer Figure 10 Structure and Services of the Device Application Layer TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 9 Submit Documentation Feedback Cop
12. 8 and Figure 9 Master a start up I I I I I I I I COM3 COM2 COM1 TW SIO IE start up Device Figure 8 Example of Successful Transmission Rate Negotiation 1 I I WURQ i WURQ l i I I I i i m S COM3 COM2 COM1 I I SIO I I No response Device ma I amp 2 l Figure 9 Example of Failed Transmission Rate Negotiation gt Towu TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 7 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated System Description 2 2 3 2 3 Data Link Layer Services 8 Table 3 Service Assignments Within Master and Device I TEXAS INSTRUMENTS www ti com Once established the master and devices have access to services summarized in Table 3 SERVICE NAME MASTER DEVICE DL_ReadParam R DL_WriteParam DL_ISDUTransport DL_ISDUAbort DL_PDOutputUpdate AJ D m m DL PDOutputTransport DL PDInputUpdate DL PDInputTransport DL PDOycle DL SetMode DL Mode DL Event DL EventConf DL EventTrigger DL Control DL Read DL Write Key Initiator of a service towards the layer above R Receiver responder of a service from the layer above Hall Effect Proximity Sensor With IO Link Design Guide Copyright O 2015 Texas Instruments Incorporated TIDU671 March 201
13. Ft g Figure 40 Bottom Overlay 5 99mm 49 91mm lt 1000 mil gt gt Figure 41 Drill Drawing Figure 42 Board Dimensions 6 4 Altium Project To download the Altium project files see the design files at TIDA 00340 6 5 Gerber Files To download the Gerber files see the design files at TIDA 00340 TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 31 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS Design Files www ti com 6 6 Assembly Drawings i ag B B LE BE Figure 43 Top Assembly Drawing Figure 44 Bottom Assembly Drawing 6 7 Software Files To download the software files see the design files at TIDA 00340 7 References 1 O Link Interface and System Specification v1 1 2 IO Link Community PDF 2 IO Link Test Specification v1 1 IO Link Community PDF 3 Reliability of Ferroelectric Random Access Memory Embedded within 130 nm CMOS J Rodriguez K Remack J Gertas L Wang C Zhou K Boku J Rodriguez Latorre Reliability Physics Symposium IRPS 2010 IEEE International 4 IEC60947 5 2 2007 Low voltage switchgear and controlgear Part 5 2 Control circuit devices and switching elements Proximity switches EC2007 5 IEC 61131 2 Programmable Controllers Part 2 Equipment Requirements and Tests IEC Webstore http web
14. LKJAO CDOEREF P2 0 UCAOTXDIUCADSIMO TBOCLKIACLK 13 of 1x a Lo HALL OUT 2 PI TAO ZITM CLKICDOUT ATICDT VEREF P2 1 UCAORXD UCADSOMITBO 0 EN L 3 3 P1 2 TA1 1 TAOCLK CDOUT A2 CD2 P2 2 UCBOCLK fort 17 J RX GND 2 ae Sees al sal 4 P1 3ITA1 2 UCBOSTE A3ICD3 env S TT scape P4 Le P1AITEO UUCADSTEIAMICDA PALO TDO TBOOUTHISMCLKICDG art E s np 18 ose v LEUR OK PLSITBO 2IUCADCLKIASICDS PJAITDITCLKIMCLKICDT d 72 PWR OK PAD 5 Fe Pt SIUCBOSIMO UCBOSDAITAO O PA2ITMSIACLKICDB r 15 CUR OK ALL PATIUCBOSOMI UCBOSCUTA1 0 PJ ITCKICDO rae 424 TEMP OK a PUAIXIN toot R7 WAKE Nc i e e e PJ SIXOUT vcc Nc it vec vec ER 2 aM 1 Le 4 UO nel 2 EA H T acp SNGSHVDTOTRGB gt 18 _ VCORE 2 e A GND QFN PAD 25 zl vcc 24 23 C8 AVCC AVSS poo pvcc pvss 12 P MSP430FR5738IRGE t lk GND C9 C10 c11 ou GND O 47uF O 1uF O tuF 47uF GND GND GND Figure 32 Hall Effect Proximity Sensor With IO Link Schematic 28 Hall Effect Proximity Sensor With O Link Design Guide Copyright 2015 Texas Instruments Incorporated TIDU671 March 2015 Submit Documentation Feedback 1 TEXAS INSTRUMENTS www ti com 6 2 Bill of Materials To download the bill of materials BOM see the design files at TIDA 00340 Design Files Table 4 BOM ITEM DESIGNATOR QTY VALUE PARTNUMBER MAN
15. R7 1 47k CRCW040247KOJNED Vishay Dale RES 47 KO 5 0 063 W 0402 0402 20 R8 1 4 7k CRCW04024K70JNED Vishay Dale RES 4 7 kQ 5 0 063 W 0402 0402 21 St 1 SKRKAEE010 Alps Switch Push Button SMD 2 9x2x3 9 mm SMD Digital Latch Hall Effect Sensor 22 U1 1 DRV5013ADQDBZ Texas Instruments DBZ0003A DBZ0003A TIDU671 March 2015 Submit Documentation Feedback Copyright O 2015 Texas Instruments Incorporated Hall Effect Proximity Sensor With O Link Design Guide 29 I TEXAS INSTRUMENTS Design Files www ti com Table 4 BOM continued ITEM DESIGNATOR QTY VALUE PARTNUMBER MANUFACTURER DESCRIPTION PACKAGE REFERENCE IO Link PHY for Device Nodes 23 U2 1 SN65HVD101RGB Texas Instruments RGB0020A RGB0020A 24 MHz Mixed Signal Microcontroller 24 U3 1 MSP430FR5738IRGE Texas Instruments 1024 B SRAM and 17 GPIOs 40 C to RGE0024G 85 C RGE0024G 25 C5 0 330 pF GRM155R72A331KA01D Murata aa ies 330 pF 100 V 210 0402 30 Hall Effect Proximity Sensor With O Link Design Guide Copyright 2015 Texas Instruments Incorporated TIDU671 March 2015 Submit Documentation Feedback 1 TEXAS INSTRUMENTS www ti com Design Files 6 3 Layer Plots To download the layer plots see the design files at TIDA 00340 sF E Te ui Vult 39F 1 ra E Ja ws bi Ji Eie 7 acii yg Lhe Figure 33 Top Overlay o ooo m o c y nm y T 02 BEENY S8SAGIT a Wi orcadiT Wi itcaair
16. RUMENTS System Description www ti com Figure 15 and Figure 16 are examples of proximity sensing of a metal obstacle based on Hall sensing When there is no metal obstacle top of Figure 15 the Hall sensor will see the field and output a voltage accordingly When there is a metal obstacle bottom of Figure 15 the field will be concentrated in the metal and the Hall sensor will not see the field any longer metal Figure 15 No Metal Obstacle Hall Sensor Does See Field Figure 16 Metal Obstacle Hall Sensor Does Not See Field 2 3 4 Physics of Hall Effect Sensors NOTE Temperature coefficients TI Hall effect sensors all have temperature compensation so they are far less sensitive to temperature effects than physics would make the raw sensor Hall effect sensors have a slight temperature dependency that could create a measurement artifact over a broad range of temperatures The consequence is often mentioned in a percentile change in sensitivity per kelvin K 14 Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright O 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS www ti com Design Overview 3 Design Overview 3 1 Hardware Figure 17 TIDA 00340 Block Diagram TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 15 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated Design O
17. TI Designs Hall Effect Proximity Sensor With lO Link Design Guide Wi TEXAS INSTRUMENTS TI Designs Design Features TI Designs provide the foundation that you need e Latch Magnetic Field Hall Effect Proximity Sensor including methodology testing and design files to _ e Multi Variable IO Link Sensor Transmitter quickly evaluate and customize the system TI Designs f B help you accelerate your time to market lO Link v1 1 Connectivity Out of the Box TMG Stack PHY and M12 Connector Design Resources A Featured Applications TIDA 00340 Tool Folder Containing Design Files Factory Automation and Process Control SN65HVD101 Product Folder e Building Automation MOGPASOFFSTOR Product Folger Sensors and Field Transmitters DRV5013 Product Folder Portable Instrumentation r9 V ASK Our E2E Experts TI E2E WEBENCH Calculator Tools Community If gt B M MUN es NEUES ears cq es ea O cm 1 2 3 4 5 6 A An IMPORTANT NOTICE at the end of this TI reference design addresses authorized use intellectual property matters and other important disclaimers and information All trademarks are the property of their respective owners TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 1 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated I TEXAS INSTRUMENTS Key System Specifications www ti com 1 Key Syst
18. UFACTURER DESCRIPTION pde REFERENCE 1 Ci 1 680 pF GRM155R71H681KA01D Murata AE CERM 680 pF 50 V 10 X7R 0402 2 ce 1 0 022 uF GRM155R71C223KA01D Murata CAP CERM 0 022 Es MO V 10 0402 X7R 0402 3 C3 C12 2 4 7 UF C1005X5R0J475M050BC TDK AE CERM 4 7 UF 6 3 V 206 XSR 0402 4 C4 1 2 2 uF GRM32ER72A225KA35L Murata E penne HF 100 V STD XZR 1210 5 C6 1 0 1 uF 12061C104JAT2A AVX pa CERM 0 1 uF 100 V 5 X7R 1206 6 C7 1 330 pF GRM155R72A331KA01D Murata CAP CERM 330 pF 100 V 210 0402 X7R 0402 7 C8 1 2200 pF GRM155R70J222KA01D Murata CAP CERM 2200 pF Bus 10 0402 X7R 0402 8 C9 1 0 47 uF GRM155R60J474KE19D Murata CAP CERM 0 47 F 6 3 V 210 0402 X5R 0402 9 Ct0 C11 2 0 1 uF C1005X5R0J104K TDK oe CERM 0 1 uF 6 3 V 10 X5R 0402 10 D1 1 Yellow LY L29K J1K2 26 Z OSRAM LED Yellow SMD OL TAE 11 D2 1 200 V RF071M2S Rohm Diode Ultrafast 200 V 1 A SOD 123 SOD 123 12 D3 1 Green LG L29K G2J1 24 Z OSRAM LED Green SMD 1 7 x 0 65 x 0 8 mm 13 D4 D5 D6 3 30 V SMAJ30CA Bourns Diode TVS Bi 30 V 400 W SMA SMA 14 J1 1 09 0431 212 04 Binder Connector M12 Socket 4Pos TH M12 Conn D12x14 3 15 J2 1 850 10 004 40 001000 Mill Max Header 4x1 50 mil R A SMT Header 50 mil R A SMT 16 RI 1 10 0k CRCW040210KOFKED Vishay Dale RES 10 0 kQ 1 0 063 W 0402 0402 17 R2 1 0 CRCW04020000Z0ED Vishay Dale RES 0 5 0 063 W 0402 0402 18 RS R6 2 820 CRCWO402820RJNED Vishay Dale RES 820 Q 5 0 063W 0402 0402 19
19. accessed and controlled through either 4 wire JTAG mode or Spy Bi Wire mode This reference design only supports the Spy Bi Wire mode For more details on how the features of the EEM can be used together with CCS see Advanced Debugging Using the Enhanced Emulation Module 6 The 2 wire interface is made up of the Spy Bi Wire test clock SBWTCK and Spy Bi Wire test data I O SBWTDIO pins The SBWTCK signal is the clock signal and a dedicated pin In normal operation this pin is internally pulled to ground The SBWTDIO signal represents the data and is a bidirectional connection To reduce the overhead of the 2 wire interface the SBWTDIO line is shared with the RST NMI pin of the device For programming and debugging purposes the SBWTCK SBWTDIO VCC and GND from the debugger need to be connected on J1 RST NMI SBWTDIO TEST SBWTCK QFN PAD AVSS DVSS GND GND Figure 21 JTAG Connection Pin 1 is Marked on PCB With the proper connections an MSP430 debugger interface can program and debug code on the reference design TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 19 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS Design Overview www ti com 3 3 2 Power During Debugging CAUTION Take special care while debugging to avoid damages due to different power domain in conflicts IO Link power and debugger tools power Read this
20. as been above BRP 8 7 5 7 6 5 6 Y Axis Title 5 5 5 4 5 LED ON LED OFF 4 18 20 22 24 26 28 30 32 34 Vin Figure 27 Power Consumption 5 2 BxP Distributions Following the test procedure detailed in Section 4 3 gives the following plots Given the size of the sample set 80 values the standard deviation can be considered a good estimate of the random variable being observed Frequency 1 78 1 89 1 99 2 10 2 20 2 81 2 41 2 52 More Bin Figure 28 BOP Histogram Given the sample size the average for the TIDA 00340 at 25 C for BOP is Upop 2 09 6 6 x 1 4 80 2 09 0 7 mT 1 TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 25 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS Test Results www ti com 140 159 1 79 199 218 238 2 57 277 More Bin Figure 29 BRP Histogram Uprp 1 99 6 6 x 1 480 1 99 0 7 mT 2 Frequency Figure 30 BOP BRP The mismatch between BRP and BOP is Upelta 0 11 0 7 mT 26 Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright O 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS www ti com Test Results 5 3 BxP versus L Supply Voltage The standard deviation for the BxP values is 0 04 for BOP and 0 06 for BRP So the variations that are observed are well within the 3 o and
21. em Specifications Table 1 Key System Specifications PARAMETER SPECIFICATION VALUE DETAILS VCC Nominal operating 24V Section 3 1 1 Iq SIO Nominal operating current SIO mode 5 mA LEDs OFF Section 5 1 Iq_lOLink Nominal operating current IO Link mode 7 5 mA LED OFF Section 5 4 COMS3 Vdrop Voltage drop lt 25V Section 3 1 1 PNP_NPN Switching output in SIO mode PNP NPN settings possible Section 3 2 NO_NC Switching function NO NC settings also possible Section 3 2 Ta Temperature range 40 C to 85 C Section 3 1 2 Form factor M12 Section 6 3 Connector M12 Section 6 1 Reverse protection Yes Section 5 3 2 1 2 2 System Description System Overview The system provides a hall sensor IC which then can drive the IO Link through the MSP430 Two LEDs are on the board one showing the IO Link activity and the other one being an image of the Hall sensor output The IO Link offers the capability for the sensor to provide logging information as well as temperature sensing using the MSP430 on chip temperature sensor for multi variable sensing for the IO Link master IO Link CAUTION To facilitate a ground up IO Link device project this section provides a quick overview of the IO Link interface This section should under no condition be considered a reference Only the reference documents should be used after the initial phase of the project IO Link is a simple and cheap point to point protocol standa
22. h their own magnetic sensor air cooled and shows change over temp lt 1 due to mechanical dimension change of Helmholtz sensor The coil key characteristic is 6 mT A The influence of the earth s magnetic field on the characterization of the TIDA 00340 is neglected This characterization can be done because in Europe the earth s magnetic field has a magnetic flux density of 48 uT which is much lower than the magnetic flux density being measured 42 Test Hardware Setup The following equipment were used e E3631 0 to 6 V 5 A 0 to 25 V 1 A Generating the voltage on the L line e E3631 0 to 6 V 5 A 0 to 25 V 1 A Generating the voltage across the Helmotz coil HP 34401A DMM Reading the voltage on the CQ line Figure 23 Test Setup 43 Testing Procedure To characterize the dependency or absence of dependancy of the BOP and BRP versus the supply voltage of the total system the following test procedure was used 1 Set the L voltage and log it 2 Set the coil voltage to a voltage that guarantees under all conditions a field below BRP Vmin Given the 10 O coil and the min value of 5 mT BRP for the DRV5013AD set the coil voltage to 10 V Indeed 10 V 10 Q x 6 mT 6 mT Read the CQ voltage Set the coil voltage to a value that guarantees under all condition a field above BRP Vmax Measure the CQ line voltage CQmax Set the coil voltage to V2 Vmin Vmax 2 which generates B2 Measure the CQ line
23. master will be made in such a way that the master shorts the CQ line to the opposite value driven by the device to ensure the device senses the current surge the master is driving on the CQ line see Figure 4 Ready to communicate I I I Device output 4 b I 1 I i 1 Q low undefined High impedance low level I I I I I I 1 i i Q high l undefined High impedance low level LI 1 I 1 I SIO Mode A v Wake up request i I I Twu TREN Figure 4 Wake Up Request TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 5 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated I TEXAS INSTRUMENTS System Description www ti com 2 2 3 1 2 Modulation Communication is done with a universal asynchronous receiver or transmitter UART frame consisting of 11 bits 1 start bit 8 bit data 1 bit parity 1 STOP bit Bits are transmitted over the CQ line with a simple non return to zero or NRZ that is a logical 0 is 24 V between CQ and L and a logical 1 is 0 V between CQ and L Bit durations are defined by the transmission rate the highest transmission rate at which the device can detect the test message sent by the master The eye diagrams are illustrated by Figure 5 and Figure 6 E T VRQHp m max L I j l I I l I I l I jaa O ela et eS ee E E ES 1 l T I l I I I I g I Detection H l I VTHH mn De
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26. nsor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS www ti com Test Setup 4 4 3 Getting Started 1 Connect the M12 cable female to the M12 connector J1 of the TIDA 00340 2 Connect the other end of the M12 cable male to the M12 connector of the USB IO Link Master 3 Connect the USB IO Link Master through USB cable to the PC 4 Launch the USB IO Link Master Software on the PC 5 Follow the steps of the IO Link Master s user s manual to connect to it and import the IODD 6 After the connection is established the screen shown in Figure 24 will be visible 7 The tab Process Data is showing if the Hall Effect sensor is switched on TRUE or not FALSE See Figure 25 e TMG IO Link Device Tool V4 0 TIDA 00340 at TMG USB IO Link Master V2 SE 2 Port 0 Pin 4 i aa o File Options Help Logged inas Specialist s X TMG USB IO Link Master V2 SE 2 1 Port 0l Pin 4 ADS1220 SK 21 Port 01 Pin 4 TIDA 00340 Topology B 4 4 blockwritemode ae USB Common Process Data Identification Observation Parameter Generic ais ome Mata VASE Overview Vendor Texas Instruments Incorporated IO Link Vendor Text Factory Automation and Control TEXAS Vendor ID Ox01C4 URL http www ti com INSTRUMENTS Device TIDA 00340 Description TIDA 00340 Hall Effect Proximity Se
27. nsor with IO Link Device ID Qx000065 lO Link Revision 1 1 Hardware Revision 1 0 Bitrate COM3 MinCycle Time 2000 Firmware Revision 10 SIO mode supported Serialnumber 0123456789 Catalog IO Device Description Commands amp 7 EtherNet IP IODD Texas hstruments TIDA 00340 SK 20150218 100D1 1 xml 9C PROFINET Revision V1 0 Date 2015 02 18 6 0 USB EQ TMG TE GmbH Connection TMG USB IO Link Master V2 SE lt gt TMG USB IO Link Master V2 TS Description 5 0 10 Link B C Texas Instruments Incorporated S C Sample Devices S O TIDA 00340 S N V1 1 TIDA 00340 cC TMG TE GmbH Figure 25 IO Link Master GUI After Established Connection to TI s IO Link Device TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 23 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated I TEXAS INSTRUMENTS Test Setup www ti com Modifications of the IO Link application on the MCU and the IODD allow to also reading out for example additional information of the sensor that is temperature In addition IO Link enables the user to configure the sensor B eo File Options Help Logged inas Specialist Md X TMG USB IO Link Master V2 SE 2 11 Port 0 Pin 4 ADS1220 SK 21 Port 01 Pin 4 TIDA 00340 0 4 42 blockwritemode 5 2 USB Process Data LESS amp i COM12 TMG USB IO Link Master V2 SE Common cess Vata Identification Observation
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29. p and Brp DBZ 23 mT 2 92 x 2 37 mm lt e 4 6 mT Through hole 3 terminal SIP LPG e 492 mT e 4x 3 15 mm Supports a wide voltage range 2 5 to 38 Protection features V Reverse supply protection up to 22 V Operation from unregulated supply Supports up to 40 V load dump Wide operating temperature range 40 C to 125 C e Output short circuit protection Open drain output Output current limitation 18 Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright O 2015 Texas Instruments Incorporated l TEXAS INSTRUMENTS www ti com Design Overview 3 2 3 3 3 3 1 Software For software design and documentation please contact TMG Design for Test Software Update For MSP430 firmware updates Code Composer Studio CCS is recommended CCS is an integrated development environment IDE for Tl embedded processor families CCS comprises a suite of tools used to develop and debug embedded applications This suite includes compilers for each of TI s device families source code editor project build environment debugger profiler simulators real time operating system and many other features The intuitive IDE provides a single user interface taking the user through each step of the application development flow For programming and debugging the MSP430FR5738 implements an embedded emulation module EEM This EEM is
30. rdized as IEC 61131 9 for the industrial automation and control applications Though the IO Link clearly states that a master can have several ports each of which can have a unique device connected to it the rest of this document refers to a connection between the master and the device to avoid a heavy master port naming of a potentially misleading port denomination IO Link is a trade name of the O Link Community This information is given for the convenience of users of this international standard and does not constitute an endorsement by IEC of the trade name holder or any of its products Compliance to this standard does not require use of the registered logos for IO Link Use of the registered logos for IO Link requires permission of the O Link Community 1 2 Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright O 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS www ti com System Description 2 2 1 IO Link Physical Connectors The IO Link connectors pin assignment is based on IEC60947 5 2 4 with extensions specified in O Link Interface and System Specification v1 1 2 1 Figure 1 is a capture of the M12 connector selected for this project from IEC60947 5 2 4 8 min 6 5 0 2 we 3 max 90 an 21 0
31. resis Bop Bap Prevents magnetic field noise from accidentally tripping the output between Bop and Brp Bo Magnetic field offset Bop Bap 2 The center point of thresholds Another parameter equation used to define hysteresis of the sensor Linear sensitivity The voltage gain per magnetic field strength in mV mT Zero magnetic field outputs Vo the quiescent voltage output Magnetic B field sensitivity Parameters used for digital Hall effect sensors Bop and Bap Parameter used for analog Hall effect sensors In mV mT the magnetic field strength is affected by Shape magnetization and composition of the magnetic object Distance from object to Hall effect sensor NOTE 1mT 10 gauss Tesla is the SI unit for the magnetic B field Higher sensitivity corresponds to a lower number For example a 3 mT Bop sensor is more sensitive than a 150 mT Bop sensor A3 mT Hall effect sensor will hit its trip point much sooner than the 150 mT Hall effect sensor as a magnet is brought closer to the sensor Required sensitivity depends on the design Highly sensitive Hall effect sensors can sometimes help to cut down system cost allowing designs to use cheaper lower strength magnets To prevent magnetic field noise from potentially tripping the sensor sooner than required some applications require less sensitive Hall effect sensors in its design TIDU671 March 2015 Hall Effect Proximi
32. resultantly no correlation between the operating or releasing fields and the system supply voltage can be seen 2 20 BOP av BRP av 2 15 2 10 o o 3 S 205 a x lt a 2 00 1 95 1 90 10 15 20 25 30 33 L Voltage Figure 31 BxP Values versus L 5 4 Power Consumption in IO Link Mode Under standard condition voltage of the L is 24 V With the current at 7 5 mA and LED ON the power consumption is 9 4 mA TIDU671 March 2015 Hall Effect Proximity Sensor With IO Link Design Guide 27 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated I TEXAS INSTRUMENTS Design Files www ti com 6 1 Schematics To download the schematics see the design files at TIDA 00340 vec vec R1 10 0k u1 m e a our p2 gt gt HALL_OUT GND 3 DRV5013ADQDBZ e shpi 0 0224F 680pF GND GND GND ES D1 2 1 D2 GND i 820 lt vee Lt e ry Yellow RFO71M2S 2 L 1 R6 2 re 1 amp Wewo eno pos i E Bros Los Bevs NN u2 2 2pF E 0 tuF D4 ali Green s emm m1 2 Trov 2 Tov T ucc AD 9 0431 212 04 Hb 1 vccsET ca I2 CQ e o o gs SW oyr a P1 OTAO 1 DMAEO RTCC
33. store iec ch webstore webstore nsf artnum 046361 opendocument 6 Advanced Debugging Using the Enhanced Emulation Module SLAA393 7 E Ramsden Hall Effect Sensors Theory and Application Second Edition Newnes 2006 8 About the Author MATTHIEU CHEVRIER is a systems architect at Texas Instruments where he is responsible for defining and developing reference design solutions for the industrial segment Matthieu brings to this role his extensive experience in embedded system designs in both hardware power management mixed signal and so on and software such as low level drivers RTOS and compilers Matthieu earned his master of science in electrical engineering MSEE from Sup lec an Ivy League university in France Matthieu holds patents from IPO EPO and USPTO ALEXANDER WEILER is a systems architect at Texas Instruments where he is responsible for developing reference design solutions for the industrial segment Alexander brings to this role his extensive experience in high speed digital low noise analog and RF system level design expertise Alexander earned his diploma in electrical engineering Dipl Ing FH from the University of Applied Science in Karlsruhe Germany 32 Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated IMPORTANT NOTICE FOR TI REFERENCE DESIGNS Texas Instruments Incorporated TI refere
34. tection L VRQL p m max VOom VIL pm mn TPIT 7 E Tar Tar In the figure 1 no detection L and 2 no detection H Figure 5 Eye Diagram for the H and L Detection 0 start bit p Bra Stop Bit n 10 Bit n 11 Tar EET Start Bit n 1 Bit n 2 Tpit CQ vH i mir Pin ANE MELDE MM PO Teri 3 t Ten 10 r Ter 11 Ter i 1 s Tar 2 s Tpit 3 S Tait 10 s Tar 11 s Tai Figure 6 Eye Diagram for the Correct Detection of a UART Frame 6 Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright O 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS www ti com System Description 2 2 8 2 Data Link Layer 2 2 3 2 1 Transmission Frame Communication between a master and its associated device takes place in a fixed schedule called the message sequence M sequence time ty sequence defined in O Link Interface and System Specification v1 1 2 1 of which Figure 7 is an extract Port UART UART UART Master frame frame frame gt 4 gt lt 4 h f Device UART UART UART frame frame frame t M sequence Figure 7 M Sequence Timing 2 2 3 2 2 Transmission Rate Negotiation After the WURQ the master sends a test message with M sequence TYPE 0 and should the device be capable of deciphering the device should answer within t4 to the master see Figure
35. ty Sensor With IO Link Design Guide 11 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated I TEXAS INSTRUMENTS System Description www ti com 2 3 2 12 Hall Effect Sensor Head On versus Slide By Head on sensing is the most usual way to test a Hall effect sensor transmitter Head on sensing involves taking a permanent magnet and bringing a pole up to the sensing part to activate that part Usually in a head on operation the sensitive axis of the Hall effect sensor is parallel to the axis of the magnet If the field strength was plotted over the distance air gap in what is often referred to as a flux map one would have a rapidly decreasing curve as the distance increases Slide by sensing is another way to use a Hall effect sensor transmitter In this configuration the magnet north south axis and the sensitive axis of the Hall effect sensors are parallel but the magnet is moving in a plane orthogonal to that axis This system can be particularly useful to detect when a system is passing it is out of range position When the Hall effect sensor detects the maximum field the sensor triggers a system notification that a moving part left the designated area While both head on and slide by sensing provide relative information some systems will need absolute information in which case null point sensing is used For this information think of the Hall effect sensor as being equally distanced from the south
36. verview 3 1 1 SN65HVD101 Vec Vec Vec OUT IN SET L SUPPLY VOLTAGE PWR_OK CONTROL RX TX Voltage Voltage Timers Detectors EN Control Over Current Over Current WAKE Logic Timers Detectors CUR OK c s TEMP OK ILIM ADJ GND L I TEXAS INSTRUMENTS www ti com Figure 18 SN65HVD101 SIO PHY for Device Nodes Block Diagram SN65HVD101 key features Configurable CQ output Push pull high side or low side for SIO mode Remote wake up indicator Current limit indicator Power good indicator Over temperature protection Reverse polarity protection Configurable current limits 9 to 36 V supply range Tolerant to 50 V peak line voltage 3 3 V 5 V configurable integrated LDO 20 pin QFN package 4 x 3 5 mm 16 Hall Effect Proximity Sensor With IO Link Design Guide Copyright O 2015 Texas Instruments Incorporated TIDU671 March 2015 Submit Documentation Feedback 1 TEXAS INSTRUMENTS www ti com 3 1 2 MSP430FR5738 PJ 4 XIN PJ 5 XOUT DVCC DVSS VCORE AVCC AVSS 16 KB FR5738 8 KB FR5734 4KB FR5730 FRAM Protection Unit RST NMI SBWTDIO TEST SBWTCK BW PJ 0 TDO PJ 1 TDUTCLK PJ 2 TMS PJ 3 TCK Interface VO Ports P1 P2 Power 1x8 I Os Management 1x3 I Os Interrupt amp Wakeup PA 1x11 I Os eUSCI A0 UART IrDA SPI eUSCI B0 SPI 2C Figure 19 MSP430FR5738 Block Diagram MSP430FR5738 key features Embedded MCU
37. yright 2015 Texas Instruments Incorporated I TEXAS INSTRUMENTS System Description 2 3 Hall Hall effect sensing technology detects the presence of a magnetic field This technology is mainly used to sense position speed and acceleration www ti com The output is linear depending on the magnetic flux but normally the flux is not proportional to the distance which is why Figure 11 looks like 1 x Magnetic Field vs Distance y A x B mA A 36 359 B 2 954 MSE 0 010 Root MSE 0 099 Hall element Magnetic Field mT Distance cm Figure 11 Hall Effect Sensing Illustrated 10 Hall Effect Proximity Sensor With IO Link Design Guide TIDU671 March 2015 Submit Documentation Feedback Copyright 2015 Texas Instruments Incorporated 1 TEXAS INSTRUMENTS www ti com System Description 2 3 1 Common Terminology and Conventions Used Standard convention to indicate polarity North pole denoted by a negative magnetic field South pole denoted by a positive magnetic field NOTE The magnets used do not have to be rare earth magnets Bop Magnetic field B field operate point as B field increases Bop is the threshold when the output goes Low Z Bhp Magnetic field B field release point as B field decreases Bpp is the threshold when the output goes High Z B is of opposite leading sign main difference between latch and switch Buys Magnetic field hyste
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