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1. C Sandor Kugler Budapest University of Technology and Economics JHE2. 1 2 WEDER 30 FEF AKERE metastable 1 8 a As Sea a As5S3 photodarkening PD ae
3. Z 99
4. 4 a Se EEO SERA SERRIC VY 7 2 2 7 5 7 6 67 RA Bia 2 DAJ 400 Si
5. 6 1 2 6 1 2 1 54 Si Coming 7059 X 6 1 0 5 mm 0 5 um
6. n ik 2 28 27 tan 0 L 2 dE ome T 3 35 an k An 3 36 4 f 3 35 3 36 1 eu STAA tan 1627 n 1 A a 3 37 7 8 A h 6 an 3 38 8 tan 37 ERAL A 21 a CE ELUCET 4n 16r n 1 Aa 3 39 DICR SEE O AT ABR EE Oh On 97 9a
7. 3 Si 4 5x10 K Corning 7059 4 6x10 K C 1 2 Corning 7059 0 5 mm 1 K 3 0 5x10 x4 6x10 1 210 m K 6 1 3 2 3 ARINE E V BRET K
8. 2 TEL 99 Dd NE MC 45 7
9. 70 A Si _ 10 mm 13 mm Y 0 5 mm C D 6 11 CERN 2 1T 2 Ke 71 3 CO 2003 Fee 2004 1999 Y Ikeda and K Shimakawa J Non Cryst Solids 338 340 539 2004 l 2 3 4 2003 TX LUKE X 1983 1997 72 7 7 1 a As Se 7 1 1 a AszSes 7 1 3 2 Si
10. a AssS Bd 3 4 Light off Film thickness A Light on 100 0 100 200 300 400 500 600 700 800 Time s 3 4 a As S Ganjoo et al 2 3 1 3 16 VL M6000 LAL BUE 3 Bom VL M6000 5 um
11. Light penetration depth X dg X55 W PD PD C 52 COLD BEN CIEL
12. 4 9 10 nm 7 8 100 mW cm 7 log 7 A log 7 PD log 7 4 600 Reaction Time z 500 5 SN 400 L 5 D ch a 300 E c z 2 200 8 D Bg e E Saturation Height A 100 0 10 100 Energy Density mW cm 7 8 7 4 a AsSe 7 4 1 7 9 PD PVE C7 7 v PESE Uc a AssSe PVE 7 10 7 11 X A4
13. Visual C T 3 2 5 3 2 5 1 a AsSe3 a Se 1 7 eV 2 1 eV 3 1 8 Twyman Green 26 wom 405 nm K 3 0
14. amp Tac 5 1 2 PD PVE 5 2 PD PVE E 20 mm KOAT tea Zu 1 mm 15 635 nm 3 45 T3 Pec C yo T TK 2 G Ede X Ow o l p ale Coppe DAT PZI Ug qp i ESRAS UYS 3 he T N 6 KY e N 1 BB 9 oe gt T
15. 7 VERE 95 8 2 X 8 1 PD PVE PD PVE SAF A E 8 1 PD PVE PD PVE 1 4 1 15 XT
16. 0 1mm KM ND 38 Wiem Tok 100 mW cm 346 41 1 N F Mott and E A Davis Electronic Processes in Non Crystalline Materials 2nd ed Clarendon Press Oxford 1979 p 199 2 K Shimakawa Y Ikeda and S Kugler Optoelectronic Materials and Devices vol 1 edited by M Popescu INOE publishing House Bucharest 2004 p 103 3 Ashtosh Ganjoo K Shimakawa H Kamiya E A Davis and Jai Singh Phys Rev B 62 R 14601 2000 4 XC EIS0 B W Video Camera Module 5 42 5 PD PVE 5 1 PD PVE 5 1 1 PD PVE 5 1 PD PVE
17. R 7 14 ROUTE 87 88 ROWER Cae Te Ll 1 R T 1 7 6 b 2 R n Hn n n 7 7 4n n n nj 7 8 0 LOBHBlig cos Amnd A DI KULIG 4n n 4n n h exp ad n lp n Es n 7 9 2 2 oe 4n n l 4n n l Hani AEN age 4zn d exp d n 7 n n n n j 7 r 7 10 WEWE Lit 47 7 47 7 I f gt ae n 1 n n 2 2 7 11 4 exp ad 14 es Gi mid cos 7 exp 2ard n n in cn A X 7 11 Hi nm mm ICR R 7
18. 42 5 nm C g x y 3 30 X 4r 2 X y t Ah x y t e l x y t V x yt n x y t rd y t T ean A AAO Az 0 VETAR pr F eb oy EU CAR 2 0 3 32 s x y x y L Ak UUV ON An 20 gt Ah gt PR gt 5 ji V x yt n nyt e t E x y t id elx yt 6 3 2 4 3 9
19. 27 700x10 4 I ae 1 cos zs 2 600 x10 7 18 89 90 eae ar ICRA BIO ERAI t 015380 2 047 7 18 7 DS d 500 nm m 3 2 1 77 0 7 15 Z 0 Bd 7 15 Photon energy eV mum 4x10 ei a QO E 5 2 gt 5 D au m Q E c Interference Effect 5 S zd D x lt 400 500 600 700 800 900 Wavelength nm E 7 15 7 15 7 log An t l 47 t log 1 t a t fn 0 n fn n 0 d 7 19
20. W amp h x y W A7 x Ad x y 2nh x y 3 3 A r 1 2 A x K E Ag x y hx ji 3 4 2 2m ot or ips a 3 5 u A expli tg A 3 6 BE b COV OX GI d UB d I u Tu tty u uo u Aj 4 Up ty Uy ty A A 24 4 cosA om 4 I 24 1 cosA COS G8 3 8 3 4 7 x 47 I x y 2A 1 cos A x x y Cos x y T
21. d WRAT 10 fbomscv 7cmBCRUR SEC 1500 3650s a Se a Se 7 3 a AssSe a AssSes PVE 1 2 mm 5
22. 2 void collapsing Ek 3 7 2 Se 721 a Se B 7 4 Si a Se PVE 532 nm 91 mW cm 2 5 nm 800 2 nm 400 75 4 Light off Height nm 0 200 400 600 800 11000 1200 41400 Time s 7 4 a Se 532 mm 91 mW cm 7 4 Si ZSRICZ 7 v PRALE a Se 7 1 1 a As Ses
23. 96 L 1 Y Ikeda and K Shimakawa Real time in situ measurements of photoinduced volume changes in chalcogenides glasses Journal of Non Crystalline Solids 338 340 539 542 2004 2 Y Ikeda and K Shimakawa In situ simultaneous measurement of photoinduced volume and bandgap changes in amorphous AsoSes films Chalcogenide Letters 2 127 132 2005 3 Y Ikeda and K Shimakawa In situ simultaneous measurements of photodarkening and photoinduced volume change in chalcogenides glasses Journal of Non Crystalline Solids 352 1582 1586 2006 IL 1 Ashtosh Ganjoo Y Ikeda and K Shimakawa In situ photoexpansion measurements of amorphous As S films Role of photocarriers Applied Physics Letters 74 2119 2121 1999 2 Ashtosh Ganjoo Y Ikeda and K Shimakawa In situ measurements of photo induced volume changes in amorphous chalcogenides films Journal of Non Crystalline Solids 266 269 919 923 2000 3 K Shimakawa Y Ikeda and S Kugler Fundamental optoelectronic processes in amorphous chalcogenides Review Optoelectronic Materials and Devices edited by M Popescu INOE Publishing Home Bucharest 2004 p 103 p 130 977 4 K Shimakawa and Y Ikeda Transient responses of photodarkening and photoinduced volume change in amorphous ch
24. A 7 2 7 4 2 Ay 7 12 1 85 eV 2 0 eV 2 1 eV 2 21 eV Ag Aa Stretched Exponential PD Ag m Ag Ac Stretched Exponential rz
25. 7 2 1 8 RR A VE FUORN Si PD PVE 6 2 ZOBWATHOTER 6 2 1 a AsSes a Se a AsoSe3 a Se 622 500 nm a As Sea a Se 1X10 Torr MAM IICLORMLE 68 6 4 mm 20X 10X 0 6 PVE Coming 7059 pe 20X 10X 0 5 PD 20 X 0 5 PD PVE PVE
26. 7 1 7 FROMAI TA 7 4 4 7 Frame Grabber 77 eda y Sdn o ex ey 4 h x y Tan Tan 81 x y 41 x 1 Gy 5 1 1 7 x y n 0 1 6 x y A ee Az Ah x yt h x y t h x y 0 5 2 h x yt x y h x y 0 etd sumably be saci 1 4 10A 2 PD TROP YT YT 2 0 5 mm PD
27. PD PVE 14 2 PD PVE 3 4 PD PVE 5 5 3
28. 0T OLA MID lt x y dg c Cam 18 3 2 2 3 6 LD DE eA loo iG Os sgg I x y u z y u zy nA W ay W 2 9 Z n 0 1 2
29. 1600 400 800 nm CCD PC 2 Bl 3 1 eT wR 3 2 7 H 77 13 14 1 0 S 5l 3E 4 2 4nn n AT ede rnd ni n m nt n n n si an AL Z
30. Wm KK W K 1 WT A ALO y AbO3 43x 107 As5Se ji flbi DIA a AsSes 6 8 a b c 6 8 a 9 5 nm 0 3 nm 0 1 nm Bd 6 8 2x10 65 Elem 800 Node 4229 Vertex 61440 T 304 95 deg Expansion 9 5 mnm b w 389 nEff 103371 Time 0 000 Dt 0 000 Step 0 Cyele 0 a Elem BDO Node 4229 Vertex 61440 T 300 23 deg Expansion 0 3 mm b w 389 nEff 103371 Time 0 000 Dt 0 000 Step 0 Cyele 0 b Elem B00 Node 4229 Ve
31. THE UT PVE w fe 405 nm DPSS DPSS DPSS 3 2 5 1 CCD Camera 1 N7 ZIN KY En ig Frame L Collimator Grabber Halogen Lens 2 L Msc mm IN Bea CCD Camera 2 HALL N Splitter 2 D A N Beam Converter Pinhole EN Splitter 1 Sample gt X Pentium4 lt P D i DPSS Laser _ 405 nm Collimator Lens 1 Console Reference Mirror Eo PZT E PZT Driver Actuator E 5 1 Screen 43 44
32. 7 a dqd T 2 1 R ad r UR exp aa EL 7 7 RR a 7 0 4 PD Ag ROEZ ERLT log7 t log log 1 R ND ED i EE t a t d 4 3 a a t a 0 xESXE 5 E Ao f log T 0 logT t d 4 4 4 2 CCD 4 2 1 PD PD a AsSe a Se 1 7 2 1 eV He Ne
33. A Ao PVE PD 1 TERA HO PVE PD Marquardt Levenbers 5 oM 7 2 Stretched Exponential exp B AL 4 z B 0 lt B lt 1 0 7 A Ag 7 Stretched Exponential ERR 7 11 2 1 eV Ag Stretched Exponential 8 0 71 A Bel Ah a z 280 420 Ah Age PD PVE 1 1
34. X S Se Te Lone pair electron LP Se atom C As atom 2 1 a As Se PD a AsSes Se LP 1 Valence band VB LP LP LP LP VB CB Conduction band F PD 22 Photoinduced Volume Expansion PVE Oe 1 5
35. PD Stretched Exponential PVE PD PD PVE 1 1 93 1 A Ganjoo K Shimakawa K Kitano and E A Davis J Non Cryst Solids 299 302 917 2002 2 S Rajagopalan K S Harshavardhan L K Malhotra and K L Chopra J Non Cryst Solids 50 29 1982 3 C A Spence and S R Elliot Phys Rev B 39 5452 1989 4 Ke Tanaka Rev Solid State Sci 4 641 1990 5 W H Press S A Teukosky W T Vetterling and B P Flannery Numerical Recipes in C Second Edition Cambridge University Press p 688 6 K Shimakawa A V Kolobov and S R Elliott Adv Phys 44 475 1995 94 8 1 1 PD PVE PD PVE
36. 4 2 BM 5 3 Rim SAL AA Tac Ag 4 Tuc 5 4 Image Display 3 Inano e Phase Calculation Method rframe O16 frame 9 frame O non sine 11 frame Measurement Cancel with Original C Using Zernike v Center Anchor Wavelength 408 nm Magnitude 4000 Meas Period 05 sec Write Intensity Data Write Height Data Control Off 10 sec Cycles On 10 sec 0 times Image Display O Intensity 1 E Phase Scale Line Plot g e 3D Plot C Nee 8 75 S o 20 Y 60 p amp a 10 v Dawo saeeastat Mask and Anchor w Intensity Indicators Intersection X Intersection Y Ox 0 mm R 2 mm Cy 0 i
37. PD PVE PVE PD Stretched Exponential PD PVE 1 1 PD 8 1 J P de Neufville S C Moss and S R Ovshinsky J Non Cryst Solids 13 191 1973 1974 2 K Tanaka J Non Cryst Solids 35 amp 36 1023 1980 3 Ke Tanaka J Non Cryst Solids J Non Cryst Solids 59 amp 60 925 1983 4 Ke Tanaka Rev Solid St Sci 4 641 1990 5 K Shimakawa A V Kolobov and S R Elliott Adv Phys 44 475 1995 6 A V Kolobov and K Tanaka Handbook of Advanced Electronic and Photonic Material
38. 1 mm 2 mm 9 0 3 2 3 2 1 3 5 Twyman Green 41 LD CCD 3 5 Twyman Green
39. w x 5 7 5 7 x y x y cos n x y 1 3 25 3 18 4 x y x y 3 25 ly AQ 0A Finem YI XC ab y x y X 326
40. Frame Grabber Processing System PC Ed 4 3 4 4 4 5 Az Processing system Video signal Frame grabber CCD Halogen Collimator camera Pentium 4 PC Spectroscope console 4 6 424 CCD 4 2 4 1 CCD CCD ened aca Sony O XC EI50 4 4 7 CCD Si 1 0 nm IE 4 7 CCD Sony XC EI50
41. Shimakawa et al 10 RAE PVE S LP LP LP LP 11 VB LP PD 11 1 Ke Tanaka Rev Solid St Sci 4 641 1990 2 K
42. Amorphous Chalcogenide Semiconductor amorphous LAF a Se DVD RAM X DVD RAM O X 1 10
43. TEM 710 nm 750 nm 37 600 900 400 ah D 300 200 100 4 5 a AsSe Tauc B 4 5 Tanc Tau Ag 10cm 1 4 4 2 3 38 446 422 CCD CCD CCD
44. ee 70 Be EC 01 o 044v EORR 73 7 1 a AsoSe3 SER EL ARF CRT TUIS BR Lesser 73 TAL 77 ARAB LTE a As Ses HROMNA e 73 7 1 2 a AssSes EHR STRE LLL esent teen 74 7 2 Se DRE AREE ER BR Re eceeccccsesccccsscsvccsssccccuscsvscesssvecucssveceesatececsaveceesnensern 75 L2 POPS Cie Be OV i ostensis ta tutti ceni ttes 75 7 2 2 FERRIC Lime ECEAT AAPG wo Loue 76 7 3 a AsySe3 JE SEG ASTRA OD DIE HEA 8 BE REE sse 79 7 4 a AsSey kk 81 TAD el Feel CO Babe TROP Eds re ic iita acacia eet 81 ii 7 4 2 RRRA 7 n THRRET euet 85 7 5 Ag LI 86 ee 93 UE o RR 95 Bl SEMIS UB cct mmm i 95 CO iR i 96 d D UN rH 97 Minus canamuncaE MM LL MM EM M M 99 ER m 101 iii 3 1 27 K 5 1 a AssSes a Se e GRISE Be Lese 49 K SD SOO ee E PEU ML E 50 ORCINEC QUU UB M 65 CM 65 Fe oe aS 65 X 6 4 rr 69 zd cma eC 70 K 7 1 a AssSes PVE 532 nm 80 2 vaASSe OT RADI eade HUI due E 7 2 2 a ASS4 PVE
45. 2 p J 4 dV 6 38 gy Windows XP OS PC Microsoft Visual C Direct X 9 0 SDK ICCG Incomplete Cholesky Conjugate Gradient 1 ICCG 6 7 63 64 amp 3 Dimensional Thermal Analysis Elem 1200 Node 6013 Vertex 72960 42963 dee E 2132 deg v ForPrint 25 00 deg Bmp Display v Auto Scale TMax 30 TMin 25 Sidelined UseTexture v Show Expansion v Show All 200000 Analysis IV Transient Mode GiveupTime 1000 OutputMesh 10 GalcCycle 10 OutputCycle 12 mittlnnn1 MMaxWary 11 sion C T 29 63 deg Expansion 9 2 mm b w 553 nEff 152481 Time 0 000 Dt 0 000 Step 0 Cycle 0 Model Film Sub Env Dise Radius 10 mm Dens 3500 ke m Dens 2500 ke m HeatRad 4 3e 011 W m de
46. 2 10X20 mm DEJ EZ 13 mm Film Substrate rae Substrate 13 mm 6 1 4325 CHE EKOSbJ S2 53 2AL ERO SDS RI 6 2 Film a Photo irradiation spot Substrate Aluminum bar D
47. Ke Tanaka 6 8 2 3 Bond Twisting Ke Tanaka 7 D I 9 2 4 Bond Braking Kolobov et al 9 eee tette tnnt 9 2 5 Shimakawaetal 10 10 Pe Bs a PIE NL IER DIESEN T 13 D 30 ers E reso NUBE CR i 14 3 3 15 3 4 a AssS Ganjoo et al 2 16 ESEGUITO T D 17 3 6 EAT 19 D 3 THO FETES E20 DREEDUERT O ans teet stt ted tete 23 PUBS 019977 I ea UD But etatem t Reo e EE tum ebore totes 23 3 9 dv vemm zar RE Ikeda and Shimakawa 7 25 3 10 Ikeda and Shimakawa 7 26 3 11 a As Ses OB TAS n kk 30 X 3 12 300 K a AszSe LE 31 E 4 1 PD A 03548 BILL 35 PI NE e RUDI e RE 36 4 3 209r CCD I 7 BUE Oene decirte titur eoe retta tet 36 Ml Aed Sy AT DICE Ar asses SR UO RR OPE Sk 37 4 5 a AsSe Tauc
48. Ag PD Wile AFER kU PVE 9 92 Photon energy hv eV 2 1 2 1 9 1 8 1 7 1 6 1 5 4 4 0x10 Interference effect 2 0x10 Relative intensity Absorption coefficient c cm wt 0 0 850 Wavelength nm 700 600 500 400 300 200 100 0 Pixel number of CCD 7 17 a As2Se3 7 17 PD PVE 500 nm 178 eV a As Se 630 nm 1 95 eV LAF C T7 1 95 eV gz
49. CERTA rm 300 mm grating CCD 2 CCD CCD We D 5 3 z CCD CCD HORRE CCD 4 AZ ene pe 7 0 7 4
50. PVE VB LP LP LP 5 HD PD PVE ARE Microscopic Mesoscopic Macroscopic 3 3 R S PD PVE Repulsion Slip 10 2 hy Zu LP LP interaction Layer O Se Atom C As Atom 2 5
51. 4 PC PD PVE 6 PVE EROI 7 PVE PD PVE PVE a As Se a Se PVE L RE PVE PVE
52. 7 q t t iu 7 em i 7 12 d t d 7 13 ind sl ELE a d n lt tha d n 4 4 A it d c nlt gw d n B Blk gg d 7 To 9g 9 Tu mE n n 0 H ie 2 n cos 47 aa n n t n tf n A n t No 7 14 7 15 E75 DOS VJ ahv JP hv 7 16 a JP X 7 16 P E hv TP war Q 7 17 a 0 hv E AU EY YY TE 1 8 eV ERP ESXIU eV cm X
53. gerei nm a aAa 0 o 026 0 L us 34 8 3 2 52 405 nm 10 mW NN C P mW cm 210 mW 1 0 x z cm 2 3 2 mW cm 3 34 K 3 34 12 ND L2mW em 3 2 5 3
54. hv C Se Atom Bond Twist 2 3 Bond Twisting Ke Tanaka 7 2 Bond breaking 8 9 Elliott 3 a Se X Extended X ray Absorption Fine Structure EXAFS 2 4 9 Se Se HARRE Se 5 EXAFS PD a Se PD PD hv 09 42o C Se Atom Bond Switching aL AS 2 4 Bond Braking Kolobov et al 9 10 2 PD
55. Ek 50 1 Peter de Groot Appl Optics 34 4723 1995 2 Y Ikeda and K Shimakawa J Non Cryst Solids 338 340 539 2004 3 Y Ikeda and K Shimakawa J Non Cryst Solids 352 1582 2006 51 6 6 1 6 1 1 a AsSe Sx10 K_ 5Sx10 m
56. 3 10 7 Video signal Processing system PZT actuator Prana driver grabber D A Laser diode converter 405nm CCD camera Pentium 4 P Reference mirror Twyman Green interferometer system console 3 9 Ikeda and Shimakawa 7 25 4 405 nm CCD camera poten Laser diode illumination for probe light 7 Collimator lens Reference mirror NDS SS pzt Probe light beam spot actuator ee sample x 3 10 Ikeda and Shimakawa 7 3 2 2 A PC fis Frame Grabber 60 PC 768X360 PC Pentium4 3 2 GHz 1G PZT PC 16 D A PC BLCD 7447 U4
57. aSe PVE a As Ses a Se PD 23 4 PVE PVE 5 a Se 7 2 2 76 6 7 5 Corning 7059 a Se 532 nm 91 mW cm 11 nm 400 3600 15 nm 7 nm Hei
58. a AsSe iE 609 nm PVC 75 dta ec I DOES ERREUR OD ERREUR 76 Ed 7 5 a Se uuu 27 X 7 6 a Se 78 Ed 7 7 a AsSes PVE 4 HL 80 X 7 8 7 10 7 11 7 12 7 13 7 14 7 15 7 16 7 17 X 8 1 AME SS JO BUS RES OO 26 BRENT 958 BE ACTEM Lesser 81 7 9 a As Se PVE 82 a AsySe3 i 83 a AsSe I 84 a AsSes Aa 85 a AsoSe Tauc 86 TID s V i 87 BO BN ETE 8 SEU aite tenete oe ee teet 90 2E 10 ORBIT EF VLL T REAL NEM 9 a As2Se3 HIRO RIED J6 TC KD URE OB a 92 PD PVE i 96 Vl 1 11 Chalcogenide Glasses
59. 405 nm PVE a AssSe 3 11 a As Se 3 12 29 30 Refractive index n Energy eV 200 400 600 800 1000 1200 Wavelength 4 nm 3 11 a As Se Attenuation coefficient a cm 10 10 10 10 1 0 1 5 2 0 2 9 3 0 3 5 4 0 Photon energy eV 3 12 300 K a As Se 3l 2 Astosh Ganjoo Y Ikeda and K Shimakawa Appl Phys Lett 74 2119 1999 3 Ke Tanaka Rev Solid St Sci 4 641 1990 4 M Born and E Wolf Principles of Optics 7th Expanded Edition Cambridge University Press Cambridge 1999 p 336 5 Peter de Groot Appl Optics 34 4723 1995 6 WEJISE 2004 346909 3 3 3 2004 7 Y Ikeda and K Shimakawa J Non Cryst Solids 338 340 539 2004 8 Jai Singh and K Shimakawa Advances in Amorphous Semiconductors CRC Press London and New York 2003 p 14 32
60. 500 nm a As Ses PVE 7 2 PVE 532 nm 86 mW cm 200 9 5 nm 600 JON 200 1 5 nm qe j jp f n d sU mm 7 1 a As Ses 532 nm 86 mW cm 1 10 8 A pP E e 6 oN 5 LH 4 Light off 2 Light on 0 0 500 1000 1500 Time s 7 2 a As Se PVE 532 nm 86 mW cm B 7 2 Si a AssSe PVE
61. Q D xdi P A oed n 1 5 m m 4nyn 27n 1 1 nj n J n n 3 2 RO OWE d IDR OIRO IRDA n IRL 7 4 I IT III Ny Tl 0 n 0 nN no 0 SRORE 3 2 3 1 2 Ganjoo 2 B 3 3 Computer Spectroscope Mercury light Light source ffs Microscope optical system IR cut filter Wei NO Ae Sample d 3 3
62. z fc PD a hv 7 13 6 3000 ul it T 480 s B 0 55 4 NUM t 420 s 0 71 Hus M hh A uli ni 2000 i uibs gl 7 j Auer i MEN MW AA AauuA 7 374 s B 0 89 1000 T ymo ti Wy A W Y r 3778 0 86 Ao cm emu Aog at 2 2 eV p emu Aog at 2 1 eV p emm Aj at 2 0 eV eu Aq at 1 85 eV 0 500 1000 1500 Time s 7 12 a AsSe A ge 85 400 500 XI S 200 100 f 360 E 220 291 222 9023 0 hv eV 1 8 1 9 2 0 2 1 2 2 2 3 2 4 hv eV 7 13 a As Se Tauc 7 5 Ag
63. 39 4 2 4 2 JCR12V 100W 3 B 4 8 800 nm 450 nm f amp EET 3 um 120 100 80 60 40 Relative Intensity 20 0 500 1000 1500 2000 2500 3000 Wavelength nm B 4 8 4 2 4 3 7 8 7 HDI f HE D OVAT NOT Ies KI oe a
64. b HARA 6 10 69 Z7 MEER HAIRA A US 62 3 a As Se K 6 5 ET a Se 310 K 6 5 e cet we eme C ee rt Et NEN NN 6 3 A X Corning 7059 C 13 mm D 20 mm 6 11 500 nm CH
65. 38 256 185 OST STR D sse eteetttobus i 39 E 4 7 CCD AA 7 Sony XC BD0 002 JE ERE Te PS ada aedinei tee a 39 1V 4 8 WAS CU DP ea ii i 40 5 1 3r LO TRTISERTHIRI SY AF Ls ODER 43 5 2 S PD PVE NIE ZAF SUD ER BIER ea 46 B 5 3 PD PVE o eee 47 5 4 PD PVE 48 pa 525 2 eee PD a FF PVE GTI Ee usse petenda 49 6 1 55 FN SE RA ooo 55 pd 6 3 06 EL 20 Bip OND ql SEP EE S sabe toda oerte 56 6 4 6 5 i 58 6 7 6 8 6 9 6 10 X 6 6 6 20 kkk 57 kk 57 NANT SU vU uA TET aoe ieee 64 66 67 PIECE B SRM 71 7 1 a As Ses 73 7 2 77 v p UTE a AszSe PVE RAME sieer 74 7 3
66. 5 1 a As Ses a Se PVE 635 nm 532 nm a As Ses PD PVE 635 nm X 5 1 a AsSe a Se ae es BEL PE Eg eV A nm 5 2 2 EP 3 2 3 PVE PVE 4 2 2 PD PD 0 5 mm MICKHT LI 1 0 mm Probe light for measuring PD 0 5 mm 1 mm Irradiation light beam 20 mm Probe light
67. PD Photobleaching PB PD PVE Phase Shifting Interferometer PSI CCD 1 PC PD PVE PD PVE PVE PD PVE Z
68. W x y 0 4 100 A 632 8nm 1 nm nA PZT 5 m x y h x y 3 8 23 24 A x 7 2m Fs 7 n 7n Qo yt 28s y 29 9 9 J 3 28 7 7 0 2 y x y 0 a n 2h x y 2W x y 0 3 29 V x y t V x y t v x y 0 Ay 3 30 6 7 n BLOM x 7
69. x BLO LD 7 100 mm L 23 4X10 2 34 um C 1 nm Bie BEL LBL 0 01 23 nm 056 5 mm REE 85x10
70. Cs CY Oh 64r A n a On fiez u 1 Jay pum Oh 325A n 1 24 a lez i 1 e ta Y 3 41 405x10 cm a AsSe 4x10 cm 33 n 3 3 a 4x10 em A Ah aes 4 1x107 An On 3 42 ip heb ig Oa 3 43 CHS 1 Ah 4 1x10 x0 033 1 4x10 cm 3 44 5 Ah 1 3x10 x2 0x10 2 6x10 cm 3 45 0 14 nm 0 26 nm 1nm DS
71. 20 5 b 1 44 10 2 12 Local coordinate 6 4 6 20 E 6 5 57 58 Elem 1200 Node 6013 Vertex 18240 r 0 00 deg Expansion 0 0 mm b w 0 nEff 0 Time 0 000 Dt 0 000 Step 0 Cycle 0 a EEEF Elem 2106 Node 10070 Vertex 25200 r 0 00 deg Expansion 0 0 mm b w 0 nEff 0 Time 0 000 Dt 0 000 Step 0 Cycle 0 b 6 6 W 12 20
72. SIR AMAA ie 29 30 Illumination light N lt 1is Sample Probe light S Halogen Collimator g Lamp A XL CCD x 4 2 0 1 mm 0 5 mm BTR Grating 1 CCD CCD CCD CCD CCD 5 CCD 4 3
73. r IE LD HER A x y 7 x y iu x y E x y L x y u x y uy x y 3 13 CHO Am nA d sy EE cam sy AL 3 14 Om nA p o SE n on hoy ea xy 3 15 BIC ty Gill to ON G12 x y A x x u x y A x y exp i x y 3 16 us x y 4 x y expli x y 9 x y 3 17 latiblaVvat h 3 13 1 x A xy 4 xy 24 x y 4 x y eos o xy 3 18 4 y Alxy A xy 3 18 I x y 24 x y 1 costo x 3 19 TUBROSREGOSEE o x y 3 19 3 15 4 cos n 2h x y 2M ny aH 0 I x y 927 x y 5 20 2 E 2h x y 2W x y PZT 2 4 4 2m W v x y T cn 28s y 2
74. Ag 1200 CH 9 nm ARAD 1500 A 1 nm a 500 cm 7 11 TERRA SEHR RIC PD PVE Ah Aa TERN PICU PVE PD I 81 82 Surface Profile at 1452 s Height 8 8 nm 7 9 a As Se PVE nm a Os Height nm b 200 s Height nm c 400 s Height nm d 600 s Heignt nm e 800 s Height nm f 1000 s 2 N v7 1 VN Fes 4 Height LY 7 10 a As Se 83 84 iLight on Light off x 25004 iac wi Lili N POTIS 12 ER T nid i LT WW rill WW 10 JT E TE y r ul ui Nu A S 15005 perf Y 8 E a 10004 4 5004 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Time s 7 11 a AsSe
75. Eng N I 2 I m 1 6 9 6 2 5 6 2 N i amp me 6 3 0 0 2 6 4 N 0 0 6 5 N 1 6 1 7 1 4 E 7 2 6 6 N i e me 6 7 N lt 1 m 9 2 6 8 N 1 1 7 1 6 9 N 3 1 1 m 1 6 10 No 1 I n 1 6 11 N 08r en e 6 12 Na 1 d 0 6 13 Ns 1 1 1 2 6 14 59 Nu 4u amp J0 m e L e175 0 2 n e 2 d ar We 1 0 Ny S 1 1 0 1 E 0 6 2 Ng We 1 0 2 Naa a 6 15 6 16 6 17 6 18 6 19 6 20 6 21 BH KOLKO POHO TVS LS NM m c k WM i oT OT UT Ox Oy Oz OT C Ot p RE C 7 4 7 x x t c p K r 60 6 22 6 23 z 6 24
76. 1 2 1 1 3 Tuc a As Se3 Tauc 4 5 2 4 1 1 Tuc SE Tauc 1x10 cm 33 4 1 3 4z PD Ag Aalt
77. 4 1 4 1 4 1 43 1 Tau Conduction Band CB Valence Band VB Density Of States DOS 23 3 Tau 1 Tauc ahv 1s xlhv E EL a BOR a Se 2 A 4 1
78. 86 PD Wm PD Eb eg x x 588 I x I x Ij exp ax 7 3 7 a mes lo x T x 7 4 7 x t 0 I x 0 7 7 x a 0 talt 053 a VES CE CENE ONERE LL
79. PVE 1 RE PVEN 7 1 2 a As Se 74 7 3 Si 500 nm a As Se PVC 532 nm 86 mW cm 4 7X10 15 nm Light on 0 8 s 10 Oo Er 15 20 0 1x10 2x10 3x10 4x10 5x10 Time s Ed 7 3 a AssSe 609 nm PVC 532 nm 86 mW cm 7 3 Si a AsSe photoinduced volume contraction PVC PVE PVC R7
80. 4 632 8 nm EHL 3 34 Illumination light sample Probe light laser ND filter pie He Ne Photo Sensor E 4 1 PD ND SVEHZERN 5757 BERT S lt S TAU 4 1 3 a Ag PD ee Ag Aa 4 2 2 PD
81. mm 300 4 3 CCD CCD PC a AssSe 4 4 eV 1 5 1 6 1 7 18 19 2 2 1 1 0 1 0x10 0 8 8 0x10 b ae i 06 6 0x10 5 0 4 4 0x10 EX EX 0 2 2 0x10 0 0 0 0 nm O 100 200 300 400 500 600 700 CCD B 4 4 a AsSe 4 4 CCD gt Tauc
82. 4 2 q a T T 6 31 7 7 IoT Q qa4 a T T d4 aaa aT aa 6 32 FAA SER EUR 7 g ekF T zy 6 33 5 67x10 W KT FIL m 7 K 7 K 633 C ekF W K 6 34 PRESAR SHARE OUI Q 4 6 0 m er er red 6 35 7 4 7 1 7 SCAT ET ITT C Ni C C 6 36 6 35 Q r 1 a4 raa zz 6 37 e
83. PVE As PD PVE PD PVE 1 1 PVE PD Ke Tanaka 6 PD PVE Ke Tanaka 2 2 30 20 E 2 0 Exposure Time s 2 2 a AsS PVE Ke Tanaka 6 2 3 2 1 LP PD 3 1 Bond twisting 1 7 1 Se S Bond angle LP MATA VB PD
84. X Leneth 10 mm X Div 20 Caliber 02 mm al 07 W m deg al 06 W m deg Sub Air 80 Wn deg e i Length 5 mm Y Div 10 R Div 18 Spec 480 J ke deg Spec J ke deg Sub Al 80 MP deg ReadF ile SpotDia 12 mm T Sub 05 mm Z Div 5 8 Div 9 PowAb 5 mW Th Exp x10 Pk OlampLen 3 mm T Film 0 0005 mm ZDiv 5 i Glass amp mbTemp 25 dee 6 7 6 1 2 3 B 6 2 Si 3 6 1 6 2 6 3 6 1 Da A HE be K Wm K x10 K os 60 25 9 AL As Se ERES K 62 X 6 3
85. node face 2 AICI 6 3 6 gi 6 4 6 5 1 4 6 6 a b a 1 4 10
86. 7 0 oo 0 o co X 7 19 7 0 7 oo 0 go oo 0 1 5X10 cm 7 16 Photon energy hv eV 2a 2 19 1 8 1 7 1 6 1 5 1 4 1 5x10 1 a 0 B a 0 8 i a 1 0x10 OO o0 Is 2m o0 3 S 50x10 2 Ne 0 0 T 600 700 800 900 Wavelength 4 nm 7 16 a 7 16 e 0 o oo 5 X 10 cm Fix ROS PD 1 8 eV 500 nm 5X10 cm 1 95 eV X 7 15 2
87. CCD 2 x 5 2 PD PVE 5 1 3 PD PVE 46 PD PVE 1 4 did dons PZT 7 CCD AAT 1 20 ms 7 0 75 4 1 5 A 3 r 4 405 nm 0 75x0 405 0 02x 7 1 2 253 um s E 4 5 7 90 3 2 AZ CCD 2 Bd 4 3
88. Jus a As2Sea a Se PVE PD PVE 1 a AsSe PD PVE PVE PD Stretched Exponential 2 PD PVE PD PVE 3 a As Se PVE PVE PVE 4 a Se PVE a AsSes PVE PVE 5 a As Se3 PVE PVE z 7 Log Io 100 mW cm 6 A L
89. Shimakawa A V Kolobov and S R Elliott Adv Phys 44 475 1995 3 K Tanaka J Non Cryst Solids 35 amp 36 1023 1980 4 Y Kuzukawa Ashtosh Ganjoo and K Shimakawa J Non Cryst Solids 227 230 715 1998 5 Y Kuzukawa A Ganjoo K Shimakawa and Y Ikeda Philos Mag B79 249 1999 6 Ke Tanaka Phys Rev B 57 5163 1998 7 Ke Tanaka J Non Cryst Solids J Non Cryst Solids 59 amp 60 925 1983 Philos Mag Lett 79 25 1999 8 S R Elliott J Non Crystalline Solids 81 71 1986 9 A V Kolobov H Oyanagi K Tanaka and Ke Tanaka Phys Rev B 55 726 1997 10 K Shimakawa N Yoshida A Ganjoo Y Kuzukawa and Jai Singh Philos Mag Lett 77 153 1998 11 T Watanabe H Kawazoe and M Yamane Phys Rev B 38 5677 1988 12 3 3 1 3 1 1 Kuzukawa 1 VL M6000 3 1 ARI e RICH L CCD
90. X I x t I x 0 1 5 Aa RARE IUIS 7 x 7 14 Edo 7 HH OSHA CIE L786 7
91. 3 A L y D RAK LD u 2 y Ay A05 nm SEs HN xe AAR AF D ANI eet 5 xy mad n 0 ABUS INS B m W x y h x y AP zz EE I H x y 3 6 PZT x y PZT nA 8 n 0 1 2 3 na W x y W x vy ey Weis y 8 3 10 19 20 AL 4 x y u x y x y exp 2 2W 0 3 11 A x y 4 LD xy 7 x y U u x y A x y exp 27 24 y oF 4 A ey rre 3 12 CHS EL A4 5 y
92. Ganjoo RT NNW bene de Ls RE PD 121 PVE amp DICATAT 4 25 PD PVE Ea Gla ae 1 3 Photoinduced Volume Expansion PVE Photoinduced Volume Contraction PVC
93. IC 0 y x y RIC RE MG 3 22 1 x y 4 G9 4 G9 m 2A x y A x y cos reo Hn 323 OI x y yw x y 3 7 7 G w Deer gem iM us 2 2 2 3 7 7 3 2 3 AX 3 21 3 8 gd Saee S h x vy Eme SW x y x y PB S h x y
94. Si PD Corning 7059 PD PVE BHT Cho TH FRUIT 2 1 Ed 6 10 a 5 2 Bd 6 10 b 80 an h Ti 278 BY c ES LER a
95. Si a AssSes 500 nm 635 nm PVE 7 1 7 7 7 1 Ah ali exp Hj T 7 1 A 4 t UXORI Baz o Ops z CHO 79 80 1 265mW em J 91 mW cm T 130 mW cm 12 A 10 0 A 10 3 4 1 r 65s re202s 11 9 f seth Jud MK sly 10 In MUN UIN i 1 245 mWiem Ot TON Prieto SAA my cm 3 AR T 435 S q slg lo alli fs 6 mm TT y MM M i j 1233 mW cm 4 As t 602 s 2 Fitting Model Function Ah A 1 exp t 9 0 0 200 400 600 800 1000 1200 Time s 7 7 a AssSe PVE Ah 532 nm 7 1 a As Se PVE 532 nm fum a A Ms T a 000 EDIT z
96. for 1 measuring PVE Bd 5 5 PD PVE 49 PD PVE 100 mW cm PD PVE PVE 523 PV Hee Wie Eder E 92 K 5 2 30DRAOND BE E Pau mW cm EUH X6 DAA 2 uim K 5 2 100 mW cm hr 1 2 mW cm 38 uW cm C 5
97. Ae PVE BEAR 7 4 1 Age 2 1 eV 7 4 2 Ag 1 85 eV UBL 7 4 2 2 0 eV 2 1 eV 2 21 eV ee ae 7 6 PD PVE PD PVE 2 2 7 11 PVE
98. M x y 3 21 320 1 005 lur I x y SDA x y 8 22 PZT x 4 x y 1 wv x y tan e I x y L x y cos iy eosly on a lt y x y lt z tan cos y x y cosfy x y a 3 23 y 7 v x y 2 V xy v xy 2mz uda x 4 x y w WA y x y m m 21 22 A w x y w x y
99. S HHHHHHHHHHHUHHHHHHHHHHHHHHHHHHLH gree L Photoinduced Volume Changes and Photodarkening in Amorphous Chalcogenides 777 situ Simultaneous Measurements 2007 1 E PE a ee ee eo 1 a CN MEE HP V PRETI MED c a RR 3 1 4 m Ru Br A MOT 3 B 2X ee 7 2 1 Photodarkening PD kk 7 22 Photoinduced Volume Expansion PVE ki 8 23 VY NNNN_4 i 8 Bo 3m OUDIAESEHEZLA T ds OBISE a EIER SERI EFIE ch eR UU 13 3 1 EROH ERR ues eene nentnntenttntennnnni 13 ML lt 13 3 1 2 kk 15 ARE S STABILI CRM 16 32 kk 17 3 2 1 E I TETE SAE SAIR 17 220 LIB T SUE O aaa ONN 19 3 2 3 23 324 LIBIZV BSEUDBIO ID Nf 25 oi 26 3205 messo O tesa ette mto Of 26 0 0 ac D i i 27 3253 Leute 2d 4 SY RFE y TERMAR F DD BRA vccssssssssssns
100. alcogenide films Review Festschrift Grigorovici 95 Prof R Grigorovich Memorial J Optoelectronics and Advanced Materials 8 2097 2100 2006 III 98 E a AsSe S 2002 Y Ikeda and K Shimakawa Real time in situ measurements of photoinduced volume changes in chalcogenides glasses 20 International Conference on Amorphous and Microcrystalline Semiconductors Sao Paulo Brazil August 2003 Y Ikeda and K Shimakawa n situ Simultaneous measurements of photodarkening and photoinduced volume change in chalcogenides glasses Alth International Conference on Amorphous and Nanocrystalline Semiconductors ICANS21 Lisbon Portugal September 2005 Y Ikeda and K Shimakawa In situ Real Time Simultaneous Measurements of Photoinduced Bandgap and Volume Changes in Amorphous Chalcogenide Films International Conference on Optical and Optoelectronic Properties of Materials and Applications Darwin Australia July 2006 WKI
101. at Aluminum bar a EEEF b 6 2 6 1 2 2 55 56 Face Global coordinate 6 3 6 20 xyz 6 node 20 6 1 End 6 3 6 20
102. c F KJ 4 9 N o N ALN jN AlN AN yy Ox Ox Oy Oy Oz Oz 6 25 C_ C CIMT N dV c ciNTIw a INL OIN O N O N O N O N Kl a lurlazanaz y Ox Ox Oy Oy Oz Oz 6 27 C CINTIN UJ d amp dnd c ctNT IN lla anac JI Jacobian h Y 7 AOE det J Jacobian v FU 7 A J ON ON ON ON ON X Yi Zi O 0 OF o 20 X y 4 y ES PL xu UO ON lle e 0n Og Om 97 On I 6 29 ON ON ON JON ON 0c Oc oc oc ac COO e e 6l 62 2 SMJ m s EILW m CHS o gas 6 30
103. ght nm 15 Li ght on Light off 0 500 1000 1500 2000 2500 3000 3500 4000 Time s 7 5 a Se 532 nm 91 mW cm TI t 10s pe 1500s t 3650s 7 6 a Se 532 nm 37 JZEEE 91 mW cm 7 5 Corning 7059 a Se C D 78 612 E 7 6
104. mm v Rim Anchor Field of view o X 685 mm Y 5 mm Measuring Height Data Plot Test and Adjustments MM Rate 1 mss 20 0 Time 1 s Camera Adj 20 5 3 PD PVE 47 i GUExp Change in Time Evolution Ah PVC T 255 3 p 0 887 x2 0 0002 Aa PD t 301 7 8 0 842 x2 33 6631 3000s Eg Tauc 0 000 eV Tauc Plot at 2188 s Surface Profile at 2788 s T6 X 18 TO 40 EI 22 3 Eg 1 777eV ev hv 1 959eV Alpha 1 6e 004cm 1 2924 OT mre mE Ap Reset numm Light On Tima 60 Light Olf Time 1560 s 5 4 PD PVE 5 2 5 2 1 48 5 1 D
105. rtex 61440 T 300 13 deg Expansion 0 1 mm b w 389 nEff 103371 Time 0 000 Dt 0 000 Step 0 Cyele 0 c 6 8 66 Ah 6 9 304 o 3024 B c3 300 oO 3 0 50 100 150 200 g Time s CES 8 lt 4 hw 4 2 0 0 50 100 150 200 Time s 6 9 6 1 3 Si Coming 7059 0 6IW K_
106. s T 1 2 EK a As Ses a AsS photoinduced volume expansion PVE PD 2 ad 2 PD i bond twisting lone pair LP 3 4 ii bond breaking ct 69 Git 10 W
107. s and Devices vol 5 edited by H S Nalwa Academic Press SanDiego 2001 p 47 7 K Shimakawa Photo induced Metastability in Amorphous Semiconductors edited by A V Kolobov Wiley VCH GmbH amp Co KGaA Weinheim 2003 p 58 8 Jai Singh and K Shimakawa Advances in Amorphous Semiconductors CRC Press London and New York 2003 p 277 9 S R Elliott J Non Crystalline Solids 81 71 1986 10 K Shimakawa N Yoshida A Ganjoo Y Kuzukawa and Jai Singh Philos Mag Lett 77 153 1998 11 A Ganjoo Y Ikeda and K Shimakawa Appl Phys Lett 74 2119 1999 J Non Cryst Solids 266 269 919 2000 12 A Ganjoo K Shimakawa K Kitano and E A Davis J Non Cryst Solids 299 301 917 2002 2 2 1 Photodarkening PD 1 2 a As Se 2 1 a As Ses 3 As 2 Se
108. scnsscnsssnsssnsssnsssnssenssenssssscssssnses 33 Ll ou BS vUa a e due ttt 33 LL uec BS ISTA 9 DEB iet tenores 33 AND WO a d od qe EE Lansecuttuttesti eate ci inta teet 33 413 ly 34 429 QILUUNOCD yo 20 ED USUS AOE aaron aa aetas 34 12 qb PDC OP able Met A 34 422 See DIS AT CO PD Sr MD ERE anata fetta 35 Tbe MEE IE Sa DU URN ee aE Te ee 38 AE so TN GD ay dee aes RR 39 4 2 4 1 CCD 39 x 2 OFF EE BPE s 39 LR SS SIMMS an BUTS 40 Aoa AON RR 40 BSE PD PVE uuuuuu 43 51 PD PVE kk 43 511 PD PVE kk 43 5 1 2 PDS PVE EF SA lt A llA 45 513 PD PVB lira AT AO ar ELO FS KA 46 PME PEDO CI PICO 48 Ty aor ATI OPORTET 48 529 JBoss BE OE Ed 49 ML TD a ee eee ee OTR T 50 OX WE o0 co i 53 AE SLEA ES NOE E 53 611 UG ORE dieeseiceitecta ntt noctes cts ttes te da 53 612 SERE Bd o2 UT citate A 54 20 s CS TROU 54 MEE opa EUR 0 E 55 0612 3 SUBE etes ll i 64 6 1 3 ll 67 MES 0 71 A 68 62 1 a As Se a Se HIRO PREE E ARPM 68 oA AFPA Eae m 68 GU 70 6 3
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