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温度安定性に優れた光通信用InN半導体レーザの

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1. HEB DA PD PD
2. DFB 2 3 2
3. Ra LED InN InN 3 49 InN PRP
4. e
5. Y aA e nae 2 2010 6 22 40 2010 INT Fa ee PV 2010 200 6 30 7 2 yems0 A lt 010 1 23 2010 LED 3 lel apes 2010 8 2 WE Wh Ea 1 AHT
6. RES ee f a b iii 4 ANL v 3 52 ui SS ef FeSiz REInO3 LaBGeO5 om ae O3
7. PD RA 200 5
8. nN InN PR MOVPE Exh
9. InN ee 4 1 tng UV B41 jnN _ 98 b 8 UV GaN 150nm DFB 1 55 m 320nm UV GaN UV 1 1kN CIE 4 2 GaN
10. 10 LED CIR ae G9 kal a ee 6 aes LaBGeO5 LaBGeOs LED LED d
11. InN V 2 a 1m 488nm Ar 488nm 2 1
12. DFB 19 InN 21 InN DFB AJD 1 55 um CBIETS LED GaN 21
13. Debye Waller HAE pw tight binding TB AF pw 2 GaN InN TB G rel 8 XI 1 17 0 50 100 150 200 250 300 K 1 16 II lt gt 6 1 4 GaN InN Debye Waller meV 250 0 50 100 150 200 300 K 1 17 GaN amp InN tight binding ea Debye Waller HAZ pw 14 Ap InN TB gt InN GaN dEpw dT ImN OF InN 9 GaN 10 295K dE ACT TB
14. PR MOVPE MOVPE MOVPE MOVPE 106 1 1um 2 InN EE c In 1 21 SHEE BEE oy pester T BEREN AL INDIE BUTE Ce SEL CE TWD
15. 0 5 u m InN 9 x X X 4 3 BET T7 1
16. 1 12 Gaussian Lorentzian FWHM FWHM 1 3 c HA twist TK A HA BE 11 om 0 05 0 00 0 05 O01 00 O1 1 H O E Cl DEANA IC LAL TTI 1 12 InN InN c V 1 13 X InN 1 12 SIR X
17. 4 7mm 50mm AS AG na InN 10 NHB ks MOVPB B404 MOVPE ian 10 InN g 107 X 3 5 InN 0002 ImN 0001 E uti ym _ 26 degree TIRRONEN ICR ASSIA SS 35 LaBGeOs 0001 dT dt AT TmmN X BI RNIB Nyvlt In A T In dT dt B facet 3 6 a 10mm 20mm 001
18. 30C 140 PT 1 2X103A InN F 3 9 F x 0 10 LaBGeO ules e LaBGeOs 3 5 1 NH3 10mm InN InGaN
19. ERLT In ImOx InzOs3 In capillary die Ir REInOs INN TAD Lallin xY 6 5 3 4 X 0 5 4 j j InN GaN Im rich 2 1 3 OEE Ga _xIny N REA TH La n _YJO GaAs InP a Ga oe a ee ee a LEC Liquid Encapsulated X LalntxYx03 Czochralski
20. F 2 BELLY 22 Gs SEEK DO Fi in Ae a R RELOD SIH 2011 8 8 9 82 AEB MOVPE InGaN m GaN In HE 72 UE A ELE FUN AGL 2 gt glp ZE IA Ging Re 20118 29 9 2 33 FAWR SUEUR RU MOVPE InN B 72 VS HQEEFE F MARR 30a ZE 10 2011 8 29 9 2 84 75 TAAL GER E MOVPE InN BBSD A 59 MIDAS PURER HARB PRE 17a B10 8 2012 3 15 18 1 T Matsuoka and H Okamoto Possibility of InN in Applications for Optical Communications Systems 3rd International Indium Nitride Workshop Ilhabela Brazil Nov 12 16 2006 2 T Hanada K Ueno M Nakao S Miyazawa and H Nakae Growth of 6FeSiz2 Films on FeSi Substrates from Molten Salt by t
21. 150nm LED EB LED 2 8 0 a S 5 1 0 18 1 10 11 12 T Matsuoka New Possibility of MOVPE Growth in GaN and InN Polarization in GaN and Nitrogen Incorporation in InN Proceeding of SPIE Gallium Nitride Materials and Devices II 6473 pp 1 12 2007 invited paper T Kimura and T Matsuoka Calculation of Phase Separation in Wurtzite Ini x y zGaxAlyB N Jpn J Appl Phys 46 24 pp L574 L576 2007 K Nakashima and T Matsuoka A Simple Method for Analyzing Peak Broadening due to Tilt and Twist Distributions in X ray Diffraction Measurements of Materials of Arbitrary Type J Appl Crystallography 41 pp 191 197 2008 M Nakao T Shimada M Wakab
22. InN InN MOVPE Metalorganic Vapor Phase Epitaxy INN I V V 1 InN MOVPE InN InN
23. FE FE BRE EB 2 3 2 EB 1cm 1 1 LED LED LED
24. 27 InN InN InN LaBGeOs 2 Lano mOx REBGeO5 RE La Pr
25. 8 FeSi2 InN 8 FeSi Si NaF NazSiFe g FeSi Fe j FeSiz p FeSi2 Ga FeSi2 B2Os encapsulant 1 5mm UEO b Fesi Ostwald Miers metasatble zone width 3 2 24 5mm B FeSi2 3 3
26. 2 InN nN hina X AF ih KAD InN KE Eg InN Eg Eg Spring 8
27. 1 19 6252C 0001 A mN Q a ATE Hi FS ei mi E 1200 1800 2000 2400 f nm 1 19 TDDs X XRD
28. 4p ZA 5 4 2008 5 Mere LF NL HAD ee FIA 2010 6 18 6 GUA InN ELI EL E REI PRICY iE GaN 2010 11 4 5 7 BIE nN 120 PIRK FESI FU AS PASE 2010 11 24 25 8 FERME EME HET LAOH ede LFI RA 7 2011 4 21 1 T Matsuoka Progress in Nitride Semiconductors from GaN to InN What is Bandgap Energy of InN 2006 International Electron Devices and Materials Symposia EDMS 1C003 Tainan Taiwan Dec 7 8 2006 2 T Matsuoka New Possibility of MOVPE Growth in GaN and InN Polarization in GaN and Nitrogen Incorporation in InN The International Society for Optical Engineering Opto electronics 2007 GaN Materials and Devices II OZ
29. 2 2 1 InN InN 2 InN InN V 3 InN LaBGeO InN
30. a 8 FeSiz InN 8 FeSis 982C FeSi o FeSiz E FeSi 8 Fesi Si disproportionation reaction NaCl NaE Na2SiEe Si g FeSi 850 900C 25 100 8 FeSis InN g FeSi 110 B FeSi2 101 110 8 FeSis MOVPE InN NHs InN 200nm InN X InN 0001
31. Vina Li 0 79 Vina E T E 0 a 1 of 100 ae re 250 300 aE 1 9 InN a er T Vina 7 g 90 1 9 ae InN 4 9 11 1 1 1990 INN nN Si 1 1 Vina 9 I V InN
32. nN DFB 2 InN InN 21 T nN LaBGeO Hittin 4
33. e 700C WH th nN aa InN E high fase 7 490cm V 2 13 InN InN V H C VI x105 2 13 E high V d 3 VPE ImN ImN X
34. d alsa InN OF In 450 C V III 25 000 In A 1 4 X H PP 29 4 30 8 32 2 33 6 3 36 4 37 8 39 2 40 6 42 20 HHZ ET a a 1 4 InN X lt ll Wad LM bl e InN Se eee WZ ZB X 1 5 X 29 WZ 0002
35. InN II V InN 7 1018 cm3 n ImN InAs p MBE Mg p p
36. InN 5 3 1 B FeSiz Lanos REBGeOs RE La Pr 3 c an eV M wo A Oa O O au O Oo PD g Nu O N lt a 8 FeSi2 fi dn WMC te fe ihr He EL InN el 25 30 35 40 45 b Lanos A 3 1 c REBGeOs RE La Pr
37. REmO3 RBInO3 RE La Nd Sm Floating Zone FZ 5mm Czochralski Cz 1 1 5 1500 InOx FeSi Cz 8 FeSi2 Fesi DFB 2
38. e ye B FeSi2 LaBGeO5 2 InN DFB 1 55 um LEBD 19 21 InN GaN FEA IE 1230 350nm mAIGaN 3 3 1
39. 3 6 Aan a 10mm 3 6 LaBGeOs adn ieee B F x EPMA Electron Probe Micro Analyzer A Ge 8999 6 996 3 7 1 4 3 7 Ge KORE FEAN Ge 7 005A 6 999A 3 7 Ge 3 4
40. InN 80 85 1 8 FeSi 2 LaBGeOs 2 INN 100 2 c InN 22
41. 50 0 8 1 mX60 1x60 pm gm 1 x80 N Am0 8 m InN c c b V 1600 Tor 2 2 A Pa H 1600Torr R a h Taare 650Torr InN 100 pe lt V Il 2 2
42. InN In mnGaAIN SIVA LED PR MOVPE FA 2 MOVPE In InGaN 7 InN InN InN In InGaAIN NEDO CREST
43. 06 F gt OD CO 48 2 2011 1 17 18 2011 7 21 SN Es Jj SS 2011 7 28 2011 CO 5 4 Rac 2011 8 23 26 2011 11 19 20 0 1 2011 n 2012 3 29 S7 a RS fit MOVPE ZnO InGaN
44. 60 UV GaN UV A 320nm B SEM 4 2 EREZD nm UV 20 OU amas 2 150nm UV Ke ovaries 90 GaN 150nm 4 3 LA 3 GaAs DFB yw UV GaN 1 5 ON EA 200nm GaN Ce c
45. m GaN InGaN GF 119 ay He AL EE SEII PLO FEY ft 2 65 2010 5 27 28 BEBE BU I GEO BIRK FIED FET D 1 RIR 2010 6 16 FEA BA Rese Be GaN B 3 BREA PASE FEIN SI t ZA D 2 2010 6 16 R Katayama N Fujii Y Fukuhara K Onabe Y H Liu and T Matsuoka N GaN GaN Th2 3 4 29 BIE TI IRR RLA 2010 7 14 16 HRA MOVPE HEA FETAL AIRED GL ELDAR PARE CCS RAE GaN P 13 NR ERRA AEG
46. Lf V E V V A B C lt es G V 22200 Cc 625 a A T C 600 oe PIRHI Ic HERE 28 gt 600 620 640 660 68 3 4 5 6 PT T C Ue 2 6 2 7 1 V 3 InN InN 2 8 E high E gt high 1 2 8b
47. InN 19 10mm 50mm nN ee ee S 2 1 CWDM uncooled laser DOWDM HEE BP CBR TAD fi Jip ee AY DFB Distribute Feed Back DFB InGaAsP mP INN
48. 1 OPTRONICS No 338 pp 80 82 2010 2 UV OPTRONICS No 338 pp 93 99 2010 3 O 8 15 1 InN KUT RU BATI BBAS FT MD PB BAER WN 2006 6 30 2 InN In rich InGaN KHIR LISTS AZAR FM B BWER HF InN 2008 6 27 3 RE INN MOVPE KURT ERW ELT BPIBASA FMA BTR BAA InN 2008 6 27 4 A 69 EO F ETRE AL APB VND OSD
49. CREST InN 18 10 24 3 S1 1 InN DFB InN
50. Wie E D V U We aa InN c InN LO h InN A LO h InN E high 490 c InN TO 7 h and c InN ao 83000 176000 h InN A LO 335000 0 07A mm e e e e 0 0 0 e e a e E E E 400 450 500 550 600 650 0 10 20 30 02 0 4 06 cm VIEE x10 um a V 0 2 10 B high 490cm FWHM 2 9 3 nN 2 11 a 500C e 700C or 2 12 2 11 E high N 500 550 600 650 700 400 450 500 550 600 650 eee 490cm cm _ CC _ FWHM lt ER Ls a ea ER a 4900m FWHM 2 2 a InN ge ie
51. UV GaN InGaN GaN 4 4 100 nm 320nm GaN InGaN 250nm GaN 850nm GaN SEM BRRR T GaN pb BL 4a LGR TIRDA DH i UV 3 GaAs DFB 4 5 DFB 20 50 fH AARC 1 30 1 50
52. InN lt gt X Heel HER MECHA 1 14 InN lt gt 6 1 15 In Ga As 5 lt gt nN InN 1 16 0 001 0 50 100 150 200 250 300 K X 1 14 6 In N D lt u gt 0 014 0 008 GaAs H 0 006 GaP I 004 gp 9 00 Et 0 002 So 50 100 150 200 250 300 Es 1 15 Asn Po REO GEA V lt z 5 InN lt gt AlIN GaN LAL nN AIN GaN
53. 1 2 InN GaN 295K InN TB dE 777 INN 1 2 295 K TO Debye Waller dHyy dT meV K KRA OMERA dEr ACT meV K et LUBE ge 10 K IAr Th 1 C Liu and J Li Phys Lett A 375 1152 2011 2 J Wu et al Phys Rev B 66 201403 2002 3 J Wu ez al J Appl Phys 94 4457 2003 4 D Olguin et al Solid State Comm 122 575 2002 5 M Schowalter et al Acta Cryst A65 5 2009 6 M Schowalter et al Acta Cryst A65 227 2009 7 A Rosenauer et a Ultramicroscopy 109 1171 1009 8 H H G rel et al Superlattices and Microstructures 40 588 2006 9 A U Sheleg and V A Savastenko Vesti Akad Nauk BSSR Ser Fiz Mater Nauk 3 126 1976 10 H Iwanaga et al J Mater Sci 35 2451 2000 h x1020cm 3 5 n
54. 50 600 1050 1500 1950 2400 2850 3300 TEKA HERS 3 5 nm Ee a ee eee ane 290 340 nm d O B O F BRA IE LaBGeOs_isxFsx x lt 1 0 le x gt 0 2 La2Ge205 x 1 0 3 9 10mm
55. 1600Torr InN 107 1 20 ZB ZB ZB WZ X In INN HEI 10 em WZ 575 10 goo A esr Minny 2BS 522 A In inN H 00 80 60 40 Mt 20 e 0 550 600 B60 7o00 InN GC VO 1 20 1600Torr InN InN OMAA ZB In O 7 InN COA
56. AE MOVPE InGaN Im eee ZTE PURGE FICS ELIZA AZ AFM GEES i GaN P 15 2010 11 4 5 BIER Fr MARS MOVPE InGaN V I TIE RHAKFEIQAR AW FICO ELTA AY PWS CCS iit eA GaN P 16 2010 11 4 5 GeO Rese RUE GaN HILARITY EIR BLED TP ELDpAAL RES iE GaN PARRILLA F 2010 114 5 17 BIER GU AS MOVPE mN ILA SF 4A T lt ZITA FGA BUI LLZ AZ APG BEY BRE GaN
57. HEB InN InN InN 1 55 um 2 H21 oo ag maas aera B H21 4 24 3 LEA PRA A gt mae D3 H21 4 24 3 pm re H19 WE _ BAY InN InN 3 3R a gt i
58. InN InN 10 cm MOVPE YEO 10 cm InN MOVPE MBE InN 7 InN ImN
59. 660 9 420K 466 1 10 InN r 1 10 Eg Eg T Eg 0 g InN 0 65 eV InN 1 11 InN DN 3 A N O 1 CBM 1
60. Effect Of growth temperature on InN films grown by pressurized MOVPE 70 RIP HGF EMAA 10p E 5 2009 9 8 11 8 EVR a MOVPE ZnO InGaN PEF RVR O ME FF 70 BUE GED FI FEBS 11a E 2 2009 9 8 11 9 REBGeO RB La Pr Cz Mie F 39 lati kt HINA A HEKE 2009 11 22 24 10 InN JST CREST prk PERII IT E He BS PL FLT 2 ABAD REO A 2009 11 27 11 Twist 2 X TE SER ADR 70 AU AEF E STIG 20p TW 6 R 2010 3 17 20 12 2 E ED EAIKO Fait AG APE EC ORF IH 2009 12 22 23 13 4 te eA K Prasertsuk MOVPE InN FT IR 2 IEP DFEALKO ia Ae HE KLEETC OR FILA
61. InN InN a AL 4AANLY I TAT pani 2 c In 1 1 In N 1 3 In GaN Ga p N GaN Ga p 0 2000 1000 500 300 10 2 10 4 UK 10 Hi is N a In Et 10 HK gt g N In In 10 0 0 0 5 1 0
62. 3 InN 2 9 V A E A 6 E 2 10 BE higsh 490cm FWHM V InN InN 600 650 A V E high TO 465cm LO 586cm WEKA e INN 2 8 a A V mN
63. BIT X 20 30 MOVPE a nN V H 700TL1x105 9 6x10 4 8x10 1 2x10 8 4x10 MOVPE NH 15sim Petes ae eee InN 2400 Tor PREM SDP Qe 0 1 1 le ee ge ae ee es a ge es we ty 600 be Te
64. M V 2400 Torr _ 6f lyw wenn 460 480 500 520 650 1600 2400 A Ne A cm Torr 3 2400 a 5 Torr 8 ImN OOO 2 8 E high InN N 650 Torr 2 3 V M TIE 15slm standard litter per minute 2
65. 2009 12 22 23 14 m GaN InGaN 2 IED P EIKO Ein A Ha LEE COR FILA RACKS 2009 12 22 23 15 1408 m GaN InGaN RHR OBR 4 70 EVE VEEN A 17p TB 7 2010 3 17 20 16 SEV MOVPE GaN InGaN EUSA GBF AS MRAR IAA 17p TB 9 2010 3 17 a 17 2 E VERS InN MOVPE 70 UEAGBFE FINK ALBA 17a TC 9 2010 3 17 20 18 V Suresh Kumar S Y Ji K Hobo Y H Liu H Shindo M Wakaba T Matsuoka InGaN MOVPE V III amp 70 BUHA BEREARI RIE AAR 17p TB 10 2010 3 17 20 19 FIFRE BE InN LaBGeO BE 57 EE SRN 17a TC 11 5 1B x 2010 3 17 2
66. cm em Torr iz l PES es 2 5 2 4 MER INN InN 20 V AH E high 2 6 A B C G j 1 9 ee H F CA tice R 2T AAE B high T a 1 0 675
67. nN V InN InN 5 FeSi REImO RE La Nd InN 1 REBGeO RE La Pr LaBGeO PrBGeO 10mm 50mm 0001 InN MOVPE InN 001jnN
68. REAT 4 Commodore Hotel Gwangju Korea HILAR 4 IATa CREST GaN aN LED JZ CRESTI LA JSPT Asian Core Program Session 6 o JSPT Asian Core Program Session 6
69. 19 c 650Torry ah 2 3 88cm Eow 490cm BE Q igh 590cm AI LO 180cm 430cm LELO BE hish 2 3 b c c gt SS S tea OR DI RD AP MOVPE 650 Tor od AP MOVPE 650 Tort Eallow 88 L A 590 Eh 490 A 2 3 b
70. 4 lt INN lt gt X 1 11 InN LN VN 0 OOK c 1 2 MOVPE c 1600Torr 575C 100nm InN m 6 X SPring8 BL13XU X 15keV 0 827A 0 1mm 60K MEILT InN 2242 0334 X c
71. Debye Waller expC 2 W X X q v ua W q 4 a u 44 ua 294 gt c 3 H V II VI BEG Hn 5 E lt 350 Schowalter 44 47 300 Einstein o 50 O K a 1 13 InN 2242 0334 E h onl iee V IS 2M 2k pT 1 14 lt RG IRE 14 Ou gt Ayn Bye Oye Aye exp T
72. TMIn Wh Lae gor ite tot a NH 15sim na EE 650Torr 2400Torr InN MOVPE 500 0 10 15 20 25 30 35 TMIn umolrmin 1 1 InN b 2400Torr 600 C InN 1 2 a 2400Torr 1 2 b SEM Sapphire 2400Torr InN a b UE Te BE LTRO TVS 1 2 2400Torr InN c InN InN 650Torr
73. ngm 1600Torr 2400Torr V I 25000 InN 500 C 700 C n 1 18 mrt ETO 10 10 cm 0 1 0 15 PT In In nim x10 em Fa e 2100 Tor s 1600 Tor 500 550 HDD 650 700 X 1 18 ep 700 C 10 cm Do 5 O InN
74. 2 ORP ET E z 2008 7 30 2008 11 16 17 2009 4 17 2009 6 29 2009 129 6320 2009 8 7 2009 8 31 2009 9 20 2009 10 23 24 2009 1222729 79 el att 5s A ate R 4 oral 2 5 T ee 0 2009 Asian Core Workshop on Wide Bandgap Semiconductors I 2009 Asian Core Workshop on Wide Semiconductors Bandgap
75. P 23 2010 11 4 5 18 SIE MOVPE InGaN V III 1E B 120 ARIK FESEM PHIL HAAS P 90 2010 11 24 25 19 HUA MOVPE 722 RKF ESEI PUA ALLS i AE P 89 2010 11 24 25 20 EARE SIEM GaN NF OREO IE RE GF 120 PREEK FEE ETAL BL P 88 2010 11 24 25 21 REA InN JST CRES TFB HE RW DOE UT E EEF PEF EMIA 3 BISA 2010 11 26 22 FIL H22 E IST CREST ADC 2010 11 26 23 J H Choi Y H Liu R Katayama T Hanada and T Matsuoka Comparison of Optical Properties between Polar and Non polar
76. PICA ME 0 5 1 Jung Hun Choi 1 Kinken Wakate 2010 Best Poster Award Comparison of Optical Properties between Polar and Non polar InGaN GaN Multi quantum well light emitting diodes 2010 12 3 TV 1 2007 12 23 H 2 2008 3 28 H 3 2008 ERAS No 27 pp 36 39 4 KHB KHB 2008 9 8 BS 2008 9 13 5 2009 7 25 H 6 2010 2010 8 7 7 2010 2010 9 25
77. 550 C V I 25 000 625 C V III LE 25 000 FC 1200 1600Torr InN 1 3 a AFM 650Torr 1200Torr 1 3 b 9 M C 1600Torr 1 3 c InN De a le oT Too 154 0 M a 650Torr b 1200Torr c 1600Torr 1 3 InN
78. TASS RPE MS gs 18 10 24 3 EFA RA ZE EW T H21 4 24 3 E EAB paranas M2 H19 4 20 3 InN InN MOVPE 4 H21 tE T H19 1 H20 3 DEB S4 4 1 1 MOVPE
79. a b c 6 5 6 7cm 9 5 14 cm a 14 2 h 9 6 h 100 200 300 400 500 600 460 480 500 50 RA AE om 2 3 InN 2 4 INNA H 2 4b BE high 2 4b 2 35 nN A B 5 6 6 0cm 6 6 8 8cm A 2 3 2 4 2 5 E high LI Ei 1 16 ai 14 at ii E 12 Pe g 40l S ur 8 IN 100 200 300 400 500 600 460 480 500 520 650 1600
80. 1000 UV 4 9 LED 2 LED UV GaAs 4 5 3 GaAs DFB d
81. 7 InN 1 3 A A MBE nwemwesp 20 59 FRA InN LT InN LA VBE Wima 25 VO seem 1 3 mo x 5 20 we 7 Lp I A WHOA GaN X Fria 0 06 InN MBE MBE InN INN
82. 8 FeSiz a 24 24 24 hr 3 2 Ostwald Miers 3 3 Ostwald Miers 8 FeSis KAY BAAS a growth sector sector Fe Si InN COM 8 FeSis b REInOs RE La Nd 1 REInO3 NdinO3 FZ InN LaInO Cz REInO3
83. A 0 06 20 WZ b z71 3 6 OTS oD cps ZBITI 104 gt X i ZB Ww ZB 102 101 MOVPE NH3 8 5slm 1600Torr TMIn 10 15umol min InN a a WZ 0002 b WZ 0002 107 5T5 C InN X ZB 111 X 1 5 InN X 10 1 6 550C 2ZB PT 575C WZ WZ 2400Tor 1 7 st NH 15slm TMh 3 35umol
84. 6473 1 San Jose USA Jan 20 25 2007 3 T Matsuoka Mysterious Material InN in Nitride Semiconductors What s the Bandgap Energy and its Application 19th International Conference on Indium Phosphide and Related Materials UPRM 2007 WeA2 1 Matsue Japan May 14 18 2007 4 T Matsuoka Mysterious Material InN in Nitride Semiconductors What s the bandgap energy and its application 2nd Polish Japanese German Crystal Growth Meeting PJG CGM2 L 8 Zakopane Poland May 24 25 2007 5 T Matsuoka Mysterious Material InN in Nitride Semiconductors What s the Bandgap Energy and its Application 8th International Balkan Workshop on Applied Physics Constanta Romania July 5 7 2007 plenary lecture 6 T Matsuoka Progress in MOVPE Growth of GaN to InN 4th Asian Conference on Crystal Growth and Crystal Technology CGCT 4 Z 24AM1 II 3A 1K Sendai Japan May 21 24 2008 keynote lecture 7 T Matsuoka Review on InGaAIN Research and Its Future Prospects Harvard and Tohoku May Exchange Meeting Commonwealth USA May 6 7 2009 8 T Matsuoka New Trends of Nitride Semiconductors 2009 International Symposium Opto mechatronic Technol SOT Istanbul Turkey Sept 21 23 plenary lecture 9 Y H Liu T Kimura Y T Zhang M Hirata K Prasertsuk R Katayama and T Matsuoka Extended Growth Windows for Single Crystalline InN Grown by Pressurized Reactor Metalorganic Vapor Phase Epi
85. InN InNt0001j 1000j 16 YBasB9Ois 4 4 DFB DFB H21 1 DEB InN DFB a
86. 20 Ga N N Ga N GaN InN 1 2 3 InN 3 V
87. 6 nN 200 PV Japan 2010 2010 6 30 7 2 PV Japan 2011 2011 12 5 7 gt fein Ss A oe LED O 8 6 eT Matsuoka and Y H Liu Nitride Semiconductors Planet Conscious Materials nternational Conference on Emerging Technology in Renewable Energy ICETRE 2010 Chennai India Aug 18 21 2010 T Matsuoka Y H Liu T Kimura Y T Zhang K Prasertsuk and R Katayama Paving the Way to High quality InN Effects of Pressurized Reactor in MOVPE International Conference on Nano and Information Technology of Semiconductors Dongguk University in Seoul Korea Dec 9 10 2010 T Matsuoka Progress and Current Status in Nitride Semiconductor
88. 6 BORO pa 4 CREST 2 SN yes FE ex 2010 150 10 18 2010 in 2010 lA GeL ee a 2010 amas ote sn ca ee ee 10 25 96 30 4 3 22 es
89. InN 0002 IfnN 111 mN InN InN ImN InN VPE Diez The characterization of InN growth un
90. Oye gt Planck 1 2 x Aplk Boltzmann c lc a oO Wie sia 1 14 6 In LN gt 1 13 16 AD Debye 4 0 15 lt gt lt gt 7 rsh AEB o 6 1 13 no A
91. LED b InN 20 InN
92. 2009 S Ishizuka M Nakao J Mizuno and S Shon Fabrication of a Grating on Composite Semiconductors using UV Nanoimprint Lithography International Conference of Photopolymer Science and Technology ICPST 26 AT Chiba Japan June 30 July 3 2009 Y H Liu and T Matsuoka Perspective in Growth of High quality InN by Pressurized MOVPE 6th International Workshop on Bulk Nitride Semiconductors 9 4 Galindia Poland Aug 23 28 2009 Y H Liu Y T Zhang T Kimura M Hirata M Nakao S Y Ji and T Matsuoka Challenges Strategies and Future Perspectives in MOVPE Growth of InN 2009 Asian Core Workshop on Wide Bandgap Semiconductors II 1 Sendai Japan Sept 4 5 2009 T Kimura Y H Liu M Hirata S Y Ji and T Matsuoka The Way to the Growth of High Quality InN 2009 Asian Core Workshop on Wide Bandgap Semiconductors 11 2 Sendai Japan Sept 4 5 2009 S Y Ji Y H Liu V Suresh Kumar and T Matsuoka MOVPE Growth of Gallium Nitride Layer on ZnO Substrate 2009 Asian Core Workshop on Wide Bandgap Semiconductors III 3 Sendai Japan Sept 4 5 2009 Y H Liu S Y Ji K Hobo T Kimura M Hirata Y T Zhang T Shimada and T Matsuoka Effects of Substrate Misorientation on InGaN Grown on M plane GaN 8th International Conference on Nitride Semiconductors ICNS 8 116 Jeju Korea Oct 18 23 2009 M Hirata Y H Liu Y T Zhang T Kimura K Prasertsuk R Katayama and T Ma
93. Y H Liu and T Matsuoka Strain Relaxation Mechanism of InGaN Thin Film Grown on m GaN phys stat sol 8 2 pp 444 446 2011 T Matsuoka New Possibility of MOVPE Growth in GaN and InN Polarization in GaN and Nitrogen Incorporation in InN Proc SPIE Gallium Nitride Materials and Devices II 6900 26 2010 a a 18 S Miyazawa S Ichikawa Y H Liu S Y Ji T Matsuoka and H Nakae Novel Substrate LaBGeOs Lattice matching to InN phys stat sol a 208 pp 1195 1198 2011 14 T Matsuoka Y H Liu T Kimura Y T Zhang K Prasertsuk and R Katayama Paving the Way to High quality Indium Nitride The Effects of Pressurized Reactor Proc SPIE 7945 pp 7945 1 7945 5 2011 15 T Kimura K Prasertsuk Y Zhang Y Liu R Katayama and T Matsuoka Phase Diagram on Phase Purity of InN Grown by Pressurized Reactor MOVPE phys stat sol 9 3 4 pp 654 657 2012 16 K Prasertsuk Y H Liu T Kimura Y T Zhang T Iwabuchi R Katayama and T Matsuoka Relationship between Residual Carrier Density and Phase Purity in InN Grown by Pressurized Reactor MOVPE phys stat sol c 9 3 4 pp 681 684 2012 17 J G Kim Y Kamei A Kimura N Hasuike H Harima K Kisoda Y H Liu and T Matsuoka Raman scattering Characterization of InN Films Grown by Pressurized Metalorganic Vapor Phase Epitaxy phys stat sol b 249 pp 779 783 2012 2
94. a c InN 10 Burstein Moss Fermi kp 3 2 2 1 11 2 3 5X107cm InN InGaAsP 3 Burstein Moss lt gt
95. B2O8 3 4 La n Y Os 2 c REBGeOs RE La Pr InN 3 1 REBGeOs RE La Pr REBBGeOs RE La Pr 25 B Ladn YJO3 02 Cz LaBGeOs 0 1 C hr 50 C Cz
96. HE BF LF FEIT FF 3 BIAS BT VA 2010 11 26 26 ERS m m GaN InGaN In A 4 IEE FE BO Bi th AH PE ES ORF IH 2011 1 17 18 27 J H Choi R Katayama T Hanada Y H Liu and T Matsuoka Comparisons of Optical Properties between Polar and Non polar InGaN GaN Multiple quantum well Light emitting diodes 4 EILBFEMAO Fira Bin KLEETOR SISA 2011 1 17 18 28 SYA PR MOVPB InN UD 4 58 BUC OEE FET BLES 25a BY 8 2011 3 24 27 29 FEW K Prasertsuk MOVPE IN B 121 RIK FEF WE EIA P 77 2011 5 24 25 30 m GaN InGaN In 727 PEK FAESA RAAE AS P 82 2011 5 24 25 81 IRIA K Prasertsuk InN X
97. 0 20 Y H Liu T Kimura Y T Zhang M Hirata T Iwabuchi K Prasertsuk T Hanada R Katayama and T Matsuoka JIE MOVPE nN TIE GE 71 UA EEF FMA 14p NJ 18 2010 9 14 17 21 JEWRY K Prasertsuk MOVPE nN 71 AEF SD FU AAA IAE 14p NJ 17 2010 9 14 17 22 MOVPE InN A 2 AUS OTE FA Fit AE 14p NH 17 2010 9 14 17 23 JIE MOVPE InN SB 3 ELI PE KO Eps IG AE LEE CORB FILA 2010 10 25 26 24 InN Ae JST CREST FY ERE BU CIAUT TAS HEF RARE 3 BIA fa ORS OA 2010 11 26 25 eVGA K Prasertsuk AR JST CREST PREBERI ICU EE
98. 1 5 2 0 at C 1 TCED a In C b N CC 1 V 2 InN V 4 InN GdFeO3 GdFeO3 011 101 InN InN REInO3 RB FeSi 8 FeSi2 101 011 7 405 A ImN 3 537 4 59 InN
99. 5 6 s 3 7 InN LaBGeOs 4 G MOVPB NH InN InNt001 InOx MOVPB 3 8 190nm 3 3 um ECB CH LaBGeO5 LaBGeOs Be ely CRY
100. 5th International Workshop on Nitrides UWN 2008 Mo2a P7 Montreux Switzerland Oct 5 10 2008 4 M Nakao T Kimura Y H Liu S Y Ji and T Matsuoka Grating Fabrication on Nitrides Grown by MOVPE for DFB Lasers 5th International Workshop on Nitrides WN 2008 Tu6 P29 Montreux Switzerland Oct 5 10 2008 ON S Y Ji K Hobo Y H Liu Y T Zhang V Suresh Kumar and T Matsuoka MOVPE Growth of GaN on Novel Substrate ZnO Sth International Conference on Nitride Semiconductors ICNS 8 MP33 Jeju Korea Oct 18 23 2009 6 Y H Liu Y T Zhang T Kimura S Y Ji and T Matsuoka Growth of InN by Pressurized Reactor MOVPE Morphology Evolution Sth Jnternational Conference on Nitride Semiconductors CNS 8 ThP23 Jeju Korea Oct 18 23 2009 7 Y H Liu T Kimura Y T Zhang M Hirata K Prasertsuk R Katayama and T Matsuoka Growth of InN by Pressurized Reactor Metalorganic Vapor Phase Epitaxy 1 The Growth Mechanisms 6th International Symposium on Medical Bio and Nano Electronics Sendai February 24 25 2010 8 T Kimura Y H Liu Y T Zhang M Hirata K Prasertsuk R Katayama and T Matsuoka Growth of InN by Pressurized Reactor Metalorganic Vapor Phase Epitaxy 2 Towards the Dense Films under High Temperature Growth 6th International Symposium on Medical Bio and Nano Electronics Sendai February 24 25 2010 9 Y T Zhang Y H Liu T Kimura M Hirata K Prasert
101. ALCA InN InGaN 1980 MOVPE II N N 2 18 4 2 1 InN X AFM FT IR 21 FEDD
102. InGaN GaN Multi quantum well lLight emitting diodes Kinken Wakate 2010 7th Materials Science School for Young Scientists Challenge of radiation for advanced materials science Sendai 12 2 3 2010 24 T Kimura Y H Liu R Katayama Y T Zhang K Prasertsuk J G Kim N Hasuike H Harima R Katayama and T Matsuoka Growth Temperature Dependence of Phase Purity in InN Grown by Pressurized MOVPE Kinken Wakate 2010 7th materials Science School for Young Scientists Challenge of radiation for advanced materials science Sendai Dec 2 3 2010 25 HHI LaBGeO F 4 59 AUS AP QTELE REA 11Tp DP6 1 AGH KE 2012 3 15 18 1 8 Penna A Reale G M Tosi Beleffi S Shinada M Nakao N Wada A L J Teixeira and P S B Andre Optoelectronic Materials and Components Characterization for Organic Inorganic Laser Assembly IEEE OECC 2009 Hong Kong China July 13 17 2009 2 5 Penna A Reale G M Tosi Beleffi S Shinada M Nakao N Wada A L J Teixeira and P S B Andre Hybrid Organic Active Waveguide for C band Applications COST MP0702 Annual Meeting at IEEE ICTON 2009 Azzores Portugal June 28 July 3 2009 3 Y H Liu T Kimura T Shimada M Hirata M Wakaba M Nakao S Y Ji and T Matsuoka MOVPE Growth of InN A Comparison between a Horizontal and 42 a Vertical Reactor
103. International Symposium Gallium Nitride SGN 3 TuP 17 Montpellier July 4 8 2010 15 T Kimura Y H Liu Y T Zhang M Hirata K Prasertsuk R Katayama and T Matsuoka The Electrical Properties of InN Grown by Pressurized Reactor Metalorganic Vapor Phase Epitaxy 37th International Symposium on Compound Semiconductors FrP69 Takamatsu Japan May 31 June 4 2010 16 Y T Zhang Y H Liu T Kimura M Hirata K Prasertsuk R Katayama and T Matsuoka Effect of Growth Temperature on Structure Properties of InN Grown by Pressurized Reactor Metalorganic Vapor Phase Epitaxy 37th International Symposium on Compound Semiconductors FrP68 Takamatsu Japan May 31 June 4 2010 17 T Hanada T Shimada S Y Ji K Hobo Y H Liu and T Matsuoka Strain relaxation mechanism of InGaN Thin Film Grown on m GaN 37th International Symposium on Compound Semiconductors FrP71 Takamatsu Japan May 31 June 4 2010 18 Y H Liu T Kimura Y Zhang K Prasertsuk T Hanada R Katayama and T Matsuoka Temperature Dependence of Bandgap Energy of InN Grown by Pressurized Reactor MOVPE 6th International Workshop on Nitride Semiconductors IWN 010 CP1 28 Tampa USA Sept 17 25 2010 19 T Kimura Y Liu Y Zhang K Prasertsuk J G Kim N Hasuike H Harima R Katayama and T Matsuoka Growth Temperature Dependence of Phase Purity in InN Grown by Pressurized MOVPE 6th International Workshop on Nitride Semicon
104. RE La Pr Cz FF 39 lle aa KLEIN A 13PS23 2009 11 22 24 InN JST CREST BE PERURI EHTE HEF PLFA BT F 2 BISERKA 2009 Loe IST CREST JEREB IET TSH HEF FY LEI P 2 AAD TA 2009 11 27 MOVPE InN JST CREST 7 ERE BUI C AUT 7 Hh HF EPFL E 2 AGA 40 2009 11 27 JST CREST PE REBUY EZ IT TSE HES FE FARMIE 2 BIANA RKL OSD 2009 11 27 JST CREST EBEP IT 7 HEF PL GLE it ZK 2009 11 27 JST CREST F7ERERUREICIAUT SE HEF FY bei 2 ARAL RKL A 2009 11 27 JERS BAAS Aes
105. a N Motegi A Gomyo S Mizuno and T Matsuoka 1 5 um emission of Slightly Oxidized InN Crystals Grown by MOVPE phys stat sol c 5 9 pp 3063 3065 2008 T Matsuoka Mysterious Material InN in Nitride Semiconductors What s the Bandgap Energy and its Application Proceeding of 2007 IEEE International Conference on Indium Phosphide and Related Mat IPRM pp 372 375 2008 invited paper T Matsuoka Progress in MOVPE Growth of GaN to InN Proc SPIE 6900 pp 69000S 1 69000S 6 2008 M Nakao T Kimura Y H Liu S Y Ji and T Matsuoka Grating Fabrication on Nitrides Grown by MOVPE for DFB Lasers phys stat sol c 6 S2 pp S893 S896 2009 Y H Liu T Kimura T Shimada M Hirata M Wakaba M Nakao S Y Ji and T Matsuoka MOVPE Growth of InN A Comparison between a Horizontal and a Vertical Reactor phys stat sol c 6 52 pp 5381 5384 2009 S Shingubara S Maruo T Yamashita M Nakao and T Shimizu Reduction of Pitch of Nanohole Array by Self organizing Anodic Oxidation after Nanoimprinting Microelectronic Engineering 87 pp 1451 1454 2010 Y T Zhang Y H Liu T Kimura M Hirata K Prasertsuk R Katayama and T Matsuoka Effect of Growth Temperature on Structure Properties of InN Grown by Pressurized Reactor Metalorganic Vapor Phase Epitaxy phys stat sol 8 2 pp 482 484 2011 T Hanada T Shimada S Y Ji K Hobo
106. der high pressure CVD conditions phys stat sol b 242 pp 2985 2994 2005 15 InN VPE x InN V 1 8eV 0 7evV InN 3 VPE
107. ductors IWN2010 AP1 49 Tampa USA Sept 17 25 2010 20 Y T Zhang Y H Liu T Kimura M Hirata K Prasertsuk R Katayama and T Matsuoka Step Flow Growth of InN by Pressurized Reactor Metalorganic Vapor Phase Epitaxy 6th International Workshop on Nitride Semiconductors IWN2010 AP1 21 Tampa USA Sept 17 25 2010 21 T Kimura K Prasertsuk Y T Zhang Y H Liu R Katayama and T Matsuoka Phase Diagram on Phase Purity of InN grown Pressurized Reactor MOVPE 9th International Conference on Nitride Semiconductors ICNS 9 PD3 17 Glasgow UK July 10 15 2011 22 1 Hanada Y H Liu Y T Zhang H Tajiri O Sakata T Kimura K Prasertsuk R Katayama and T Matsuoka Temperature Dependent Static Correlation Functions of Vibrational Atomic Displacements for InN Film Measured by X ray Diffraction 9th International Conference on Nitride Semiconductors ICNS 9 PD3 31 Glasgow UK July 10 15 2011 23 K Prasertsuk Y H Liu T Kimura Y T Zhang T Iwabuchi R Katayama and T Matsuoka Relationship between Residual Carrier Density and Phase Purity in InN Grown by Pressurized Reactor MOVPE 9th International Conference on Nitride Semiconductors ICNS 9 PD3 36 Glasgow UK July 10 15 2011 3 A A 4 1 1 2009 257879 21 11 11
108. f InN A Comparison between a Horizontal and 10 11 12 19 14 15 16 17 18 a Vertical Reactor 5th International Workshop on Nitrides IWN 2008 Mo2a P7 Montreux Switzerland Oct 5 10 2008 M Nakao T Kimura Y H Liu S Y Ji and T Matsuoka Grating Fabrication on Nitrides Grown by MOVPE for DFB Lasers 5th International Workshop on Nitrides WN 2008 Tu6 P29 Montreux Switzerland Oct 5 10 2008 M Nakao S Ishizuka S Kataza S Shoji S Mashiko and J Mizuno Batch Fabrication of First Order Grating for DFB Lasers on 3 inch GaAs Substrates by using UV Imprint and Chlomne 1CP RIE Techniques ZEEE Nanotechnology Materials and Devices Conference 2008 NMDC2008 TuA II 3 Kyoto Japan Oct 20 22 2008 S Ishizuka M Nakao S Kataza H Shinohara S Mashiko J Mizuno and S Shoji Batch Transfer Large Area Gratings for DFB Lasers Fabricated on GaAs Substrates using Ultraviolet Nano Imprint Lithography 21st International Microprocesses and Nanotechnology Conference MNC 2008 30C 11 6 Fukuoka Japan Oct 27 30 2008 S Maruo T Yamashita M Nakao T Shimjizu and S Shingubara Realizing 1 V3 Pitch of the Alumina Nano hole Array by Self organizing Anodic Oxidation after Nano imprinting 21st International Microprocesses and Nanotechnology Conference MNC 2008 29D 9 130 Fukuoka Japan Oct 27 30 2008 S Penna A Reale G M Tosi Beleffi S Shi
109. he Disproportionation Process 15th International Conference on Crystal Growth ICCG 15 Salt Lake City USA Aug 12 17 2007 3 N Motegi M Nakao and T Matsuoka MOVPE Growth Mechanism of High Quality N Polar GaN on C Plane Sapphire 7th International Conference on Nitride Semiconductors ICNS 7 X 7 Las Vegas USA Sept 16 21 2007 4 T Kimura and T Matsuoka Band Gap of Miscible InGaAIBN for Use in Optical Communications Systems 7th International Conference on Nitride Semiconductors ICNS 7 WP96 Las Vegas USA Sept 16 21 2007 5 M Nakao T Shimada M Wakaba N Motegi A Gomyo S Mizuno and T Matsuoka Anomalous Temperature Dependence of Photoluminescence for InN Grown by MOVPE 7th International Conference on Nitride Semiconductors ICNS 7 WP3 Las Vegas USA Sept 16 21 2007 6 M Nakao T Shimada M Wakaba N Motegi A Gomyo S Mizuno and T Matsuoka 1 5 um Emission of Slightly Oxidized InN Crystals Grown by MOVPE 34th International Symposium on Compound Semiconductors ISCS 34 ThC P31 Kyoto Japan Oct 15 18 2007 7 S Singubara T Yamashita K Maruo M Nakao and T Shimizu Reduction of Nanohole Pitch from that of Pre imprinted one in AAO by Adjusting Anodic Voltage Materials Research Society Spring Meeting 110 38 San Francisco USA Mar 24 28 2008 8 Y H Liu T Kimura T Shimada M Hirata M Wakaba M Nakao S Y Ji and T Matsuoka MOVPE Growth o
110. min BLO 550 700 C TMI 1600Torr 500 550 600 650 700 0 10 20 30 40 InN C TMI umol min 1 6 1600Torr mN 1 7 2400Torr InN TMI EBSD oF 1 8 ARIE WZ BREN ZB 500 ZB 600 100 WZ a 500 C b 600 C 1 8 2 InN Eg 1 9 Zo
111. nada M Nakao N Wada A L J Teixeira and P S B Andre Hybrid Organic Active Waveguide for C band Applications COST MP0702 Annual Meeting at IEEE ICTON 2009 Azzores Portugal June 28 July 3 2009 S Penna A Reale G M Tosi Beleffi S Shinada M Nakao N Wada A L J Teixeira and S B Andre Optoelectronic Materials and Components Characterization for Organic Inorganic Laser Assembly JEEE OECC 2009 Hong Kong China July 13 17 2009 Y H Liu and T Matsuoka Perspective in Growth of High quality InN by Pressurized MOVPE 6th International Workshop on Bulk Nitride Semiconductors 9 4 Galindia Poland Aug 23 28 2009 Y H Liu S Y Ji K Hobo T Kimura M Hirata Y T Zhang T Shimada and T Matsuoka Effects of Substrate Misorientation on InGaN Grown on M plane GaN 8th International Conference on Nitride Semiconductors UCNS 8 116 Jeju Korea Oct 18 23 2009 S Y Ji K Hobo Y H Liu Y T Zhang V Suresh Kumar and T Matsuoka MOVPE Growth of GaN on Novel Substrate ZnO Sth International Conference on Nitride Semiconductors ICNS 8 MP33 Jeju Korea Oct 18 23 2009 Y H Liu Y T Zhang T Kimura S Y Ji and T Matsuoka Growth of InN by Pressurized Reactor MOVPE Morphology Evolution Sth International 38 19 20 21 22 23 24 29 26 27 28 29 Conference on Nitride Semiconductors ICNS 8 ThP23 Jeju Korea Oct 18 23
112. s from GaN to InN Wide bandgap Semiconductors nanostructures 1 Crystal Growth Centre of Anna University in Chennai INDIA Jan 10 11 2011 2006 1 11 28 29 aL AT 2 gt 2007 2 4 Py 2 202 AE 3 2008 3 17 E gt X aman ee FOBT 1 DE OE InN H20 2008 6 27 eS NS RA PN Ay ae
113. suk R Katayama and T Matsuoka Growth of InN by Pressurized Reactor Metalorganic Vapor Phase Epitaxy 3 Temperature Dependence on Structure Properties 6th International Symposium on Medical Bio and Nano Electronics Sendai February 24 25 2010 10 M Hirata Y H Liu Y T Zhang T Kimura K Prasertsuk R Katayama and T Matsuoka Growth of InN by Pressurized Reactor Metalorganic Vapor Phase Epitaxy 4 Optical and Electrical Properties 6th International Symposium on Medical Bio and Nano Electronics Sendai February 24 25 2010 11 8 Y Ji V Suresh Kumar Y H Liu Y T Zhang T Kimura K Hobo and T Matsuoka Progresses in GaN Growth on ZnO Substrate 6th International Symposium on Medical Bio and Nano Electronics Sendai February 24 25 2010 12 V Suresh Kumar S Y Ji K Hobo Y H Liu H Shindo and T Matsuoka Influence of V III Ratio on Surface Morphologies and Optical Properties of MOVPE grown InGaN Epitaxial Layers 6th International Symposium on Medical Bio and Nano Electronics Sendai February 24 25 2010 18 8 Miyazawa S Ichikawa Y H Liu S Y Ji T Matsuoka and H Nakae Novel Substrate LaBGeOs Lattice matching to InN International Symposium Gallium Nitride ISGN 3 TuP 16 Montpellier July 4 8 2010 5 A 14 T Matsuoka S Miyazawa S Ichikawa Y H Liu T Hanada and R Katayama Possibility of Novel Substrate LaBGeOs Lattice Matching to InN
114. t of MOVPE grown InGaN Layer on m plane GaN Substrate 2011 International Conference on Solid State Devices and Mat SSDM 2011 M 1 2 Nagoya Japan Sept 28 30 2011 T Iwabuchi Y H Liu T Kimura Y T Zhang K Prasertsuk R Katayama and T Matsuoka Effect of Phase Purity on Dislocation Density of PR MOVPE Grown InN 2011 International Conference on Solid State Devices and Mat SSDM 2011 M 1 3 Nagoya Japan Sept 28 30 2011 T Matsuoka T Kimura K Prasertsuk Y T Zhang T Iwabuchi and R Katayama Recent progress in InN research Zst IMR amp KMU Joint Workshop 1 Busan Korea Feb 20 2012 T Iwabuchi Y H Liu T Kimura Y T Zhang K Prasertsuk R Katayama and T Matsuoka Effect of Phase Purity on Dislocation Density of PR MOVPE Grown InN Zst IMR amp KMU Joint Workshop 8 Busan Korea Feb 20 2012 K Shojiki T Hanada T Shimada Y H Liu R Katayama and T Matsuoka Tilted Domain and Indium Content of MOVPE grown InGaN Layer on m plane GaN Substrate Ist IMR amp KMU Joint Workshop 10 Busan Korea Feb 20 2012 O 25 23 1 PARE B FeSi 54 DEF ARE AGAIAS 29a P6 21 2007 3 27 30 TUS Bea ARS PILAR REBBGeO
115. taxy 37th International Symposium on Compound Semiconductors FrD1 2 Takamatsu Japan May 31 June 4 2010 2 23 2 10 T Matsuoka and Y H Liu Nitride Semiconductors Planet Conscious Materials International Conference on Emerging Technology in Renewable Energy TCETRE 2010 Chennai India Aug 18 21 2010 11 1 Matsuoka Y H Liu T Kimura Y T Zhang K Prasertsuk and R Katayama Paving the Way to High quality InN Effects of Pressurized Reactor in MOVPE International Conference on Nano and Information Technology of Semiconductors Dongguk University in Seoul Korea Dec 9 10 2010 12 T Matsuoka Progress and Current Status in Nitride Semiconductors from GaN to InN Wide bandgap Semiconductors nanostructures 1 Crystal Growth Centre of Anna University in Chennai INDIA Jan 10 11 2011 13 Matsuoka Progress in MOVPE Growth in GaN and InN The International Society for Optical Engineering Optoelectronics 2010 Quantum Sensing and Nanophotonic Devices V 6900 26 San Jose USA Jan 20 23 2011 14 T Matsuoka Recent Progress in Growth of InN and its Applications International Conference on LED and Solid State Lightings LED2011 Seoul Korea April 11 12 2011 15 T Matsuoka Y H Liu T Kimura and R Katayama Possibility of Pressurized Reactor MOVPE for Nitride Semiconductors 5th International Conference on LED and Solid State Lighting Conference Center COEX Seoul Korea June 30 J
116. tsuoka Evaluation of Carrier Density of Pressurized MOVPE Grown InN by using FTIR Spectroscopy 2009 Asian Core Workshop on Wide Bandgap Semiconductors in Korea SI 1 Gwangju Korea Oct 23 24 2009 Y H Liu Y T Zhang T Kimura S Y Ji and T Matsuoka The Mechanism of InN Growth by MOVPE 2009 Asian Core Workshop on Wide Bandgap Semiconductors in Korea SIII 4 Gwangju Korea Oct 23 24 2009 S Y Ji Y H Liu V Suresh Kumar Y T Zhang T Kimura and T Matsuoka MOVPE Growth of InGaAIN Layer for High Brightness LEDs 26th 2009 Asian Core Workshop on Wide Bandgap Semiconductors in Korea SIV 1 Gwangju Korea Oct 23 24 2009 T Kimura and T Matsuoka Band Gap of Miscible InGaAIBN as a Novel Materials for Optical Communications System 2009 Asian Core Workshop on Wide Bandgap Semiconductors in Korea SIV 2 Gwangju Korea Oct 23 24 2009 G Beleffi S Penna H Baghdasaryan N Wada S Shinada M Nakao and P 39 30 l 32 30 34 30 Andre Towards the implementation of an Organic Inorganic Laser for Next Generation Optical Applications CLEO QELS 2010 San Jose California May 16 21 2010 M Nakao M Yamaguchi and S Yabu Imprint Mold Cleaning by Vacuum Ultraviolet Light International Conference on Nanophotonics 2010 Tsukuba May 30 June 3 2010 K Shojiki T Hanada T Shimada Y H Liu R Katayama and T Matsuoka Tilted Domain and Indium Conten
117. uly 1 2011 D 34 35 1 B FeSi 68 i HOTEL ER EGIL 2007 9 4 8 2 J G Kim Y Kamei H Yamamoto N Hasuike K Kisoda H Harima Y H Liu and T Matsuoka Raman Scattering Characterization of MOVPE InN Films Comparison between High pressure and Low pressure Growth 56 EUU AJE FILE BIE CTRA 31a Z 02 2009 3 30 4 2 3 BIEDPEAO Bin AE 2009 7 31 4 MOVPE InN fede OR CEN BEA ABKO An ARE PES 2009 7 31 5 InGaN DETIL LHDEE EIO FARDE do Ee ee RELORI 2009 7 31 6 SEW EAE InN c F 70 EE FR FUE 10p E 6 2009 9 8 11 213 Ay 7 He VGA z E HHE

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