高周波スパッタリングによる ZnO薄膜作製における投入電力の効果
Contents
1. WHEL B Do X X ATX G Fo XX E 2004 53 pp 25 33 2008 57 pp 43 49 2010 59 pp 56 612. ds 1cm ds Scm 2 ZnO Mobility 096Al Mobility 0 496Al Mobility 1 3 Al Mobility 1 796Al Mobility Cm VS 0 20 40 60 80 100 120 Power W 100 Vobility 096Al Mobility 0 496Al Hit Vobility 1 396Al Mobility 1 796Al Mobility cm Vs 0 50 100 150 200 250 300 350 Power W b Fig 7 Changes of the mobility of the film deposited on the distance from center position of 1cm a and 5cm b as a function of RF incident power 1000 100 S 10 E Z 1 E z 0 1 0 01 20 40 60 80 100 120 Power W Fig 8 Changes of the mobility of 0 4 Al doping film deposited on the distance from center position of 1cm a and 5cm b as a function of RF incident power Carrier density 096Al Carrier density 0 496Al Carrier density 1 396Al 6 Carrier density 1 796Al Carrier concentration cm 0 20 40 60 80 100 120 Power W Q Carrier density 096Al Carrie
3. 300W ZnO XTEM Fig 1 Cross sectional TEM images of non doping ZnO films deposited on Si substrate at different RF incident power and distance from center position ds of a 25W and ds 1cm b 100W and ds 1cm c 300W and ds lcm d 25W and ds 5cm e 100W and ds 5cm f 300W and ds 5cm respectively C ex E s S We s P P d kar f x PA t HAE d x XE Fig 2 Cross sectional High Resolution TEM images of ZnO films deposited on Si substrate at the distance from center position ds of a ds lcm and b ds 5cm ZnO Fig 3 Selected area electron diffraction SAED pattern of non doping ZnO films deposited on Si substrate at different RF incident power and distance from center position ds of a 300W and ds lcm b 200W and ds 1cm c 100W and ds lcm d 50W and ds lcm e 25W and ds 1cm f 300W and ds 5cm g 200W and ds 5cm h 100W and ds 5cm 1 25W and ds 5cm respectively 3 2 2
4. Carrier density 0 496Al1cm M Carrier density 0 496Al5cm Carrier concentration cm 0 20 40 60 80 100 120 Power W Fig 10 Changes of the carrier concentration of 0 4 Al doping film deposited on the distance from center position of lcm a and 5cm b as a function of RF incident power 3 4 Eg 0961cm ad Lao 0 4961cm HM Eg 1 3961cm Eg 1 7961cm 0 50 100 150 200 250 300 350 Power W Eg 0965cm Eg 0 4965cm M Eg 1 3 5cm Eg 1 7965cm 3 39 0 50 100 150 200 250 300 350 Power W b Fig 11 Changes of the optical gap of the film deposited on the distance from center position of 1cm a and 5cm b as a function of RF incident power 0 4 Al A1l 0 4 Al
5. 0 4 Al D 0 4 Al Fig 6 ds lcm ds Scm 100 Q Resistivity 0 496AL 1cm dik Resistivity 0 496AL5cm Resistivity 32cm e 0 20 40 60 80 100 120 Power W Fig 6 Changes of the resistivity of 0 4 Al doping film deposited on the distance from center position of 1cm a and 5cm b as a function of RF incident power 3 3 2 Fig 7 Jo Fig 7a ds 1cm 0 Al 25W THE
6. Al 100W 100W lt 100W Jj 25W 50W 100W 200W 300W ZnO Al 04 1 7 2 ASP ZnO 99 999 100mme 3mm CHo CAT QUAS SW V b nO 25W 50W 200W 300W 99 999 Z
7. BR 0 4 Al 1 3 Al 1 7 Al Fig 7b ds Scm 300W A 0 4 Al Al 0 4 Al Fig 8 ds lcm ds Scm
8. Van der Pau HL5500PCM Bio Rad Laboratories 3 3 1 3 1 1 TEM Fig 1 XTEM x 25W 100W 300W lcm ds lcm Si 30nm C
9. Si 3 2 Fig 4 Z 100W 3 2 1 1cm Fig 4a ds lcm AI 0 4 1 7 100W 100W XTEM 200W 300W
10. Si 15nm Si 100W 30 ds 1cm ds lcm ds Scm d lcm ds 5cm
11. Eg Eg Fig 11b ds Scm Bg d 1cm Fig 12a ds lcm B Fig 12b d 5cm B d 1cm B B 4 ZnO AOSP Zn Ar O ASP
12. Fig 10 ds 1cm ds Scm 10 RAE 3 4 400nm 700nm 80 Q B 0961cm 1d da B 0 4961cm l B 1 39 1 cm B 1 796 1 cm 0 50 100 150 200 250 300 350 Power W 0 50 100 150 200 250 300 350 Power W b Fig 12 Changes of the B values of the film deposited on the distance from center position of Icm a and 5cm b as a function of RF incident power Zn0O 380nm Eg eV B Fig 11 Fig 12 Fig 11a ds 1cm
13. 5cm Fig 4b ds Scm Al 0 4 1 7 300W ds Scm WAS 20 8 15 Ss 10E D e 5 E z 6 lt E 0 ll h bl F s 0 50 100 150 200 250 300 350 Power W a 10 i i 0 5cm di amp 0 4965cm NM 1 3 5cm F 8 F 1 7 5cm B 3 E 2 4 Z m A 3 0 50 100 150 200 250 300 350 Power W b Fig 4 Changes of the deposition rate of the films deposited on the distance from center position of Icm a and 5cm b as a function of RF incident power 3 3 3 3 1 Fig Jo Fig 5a ds lcm 0 Al 25W 0 4 1 79
14. L5 cR FETAL Ca 200W SAED Fig 1 300W V ZD 100W SAED 50W 25W SAED IRL c ds Scm Fig 1 D XTEM SAED ds Scm Zn0 100W
15. 2011 60 pp 71 79 5 JEM 2100 1 2 3 4 2011 9 16
16. ZnO Ar 2 Al D e tadaZnO23p B4 AD ERY Y Y RR c ZnO ZnO supe
17. 0 0 4 Al 1 3 Al 1 7 Al 1 3 Fig Sb ds Scm 100 Resistivity 2cm 0 1 0 01 i i 0 20 40 60 80 100 120 Power W a 10 Resistivity 32cm gt 0 001 i 0 50 100 150 200 250 300 350 Power W b Fig 5 Changes of the resistivity of the film deposited on the distance from center position of 1cm a and 5cm b as a function of RF incident power 300W A 0 4 Al A1
18. Bulletin of Aichi Univ of Education 61 Art Health and Physical Education Home Economics Technology and Creative Arts pp 49 57 March 2012 ZnO Effects of Incident Power on Formation of Zinc Oxide Films by RF Sputtering Hideki SHIMIZU and Takuya MORISHITA Department of Technology Education Aichi University of Education Kariya 446 8542 Japan Kasugai City Kashihara Junior High School Kasugai Aichi 486 0915 Japan 1 ZnO ETE ZnO ZnO AOSP Zn Ar O ASP ZnO A Ar 2
19. HRXTEM Fig 2 Fig 2a Fig 1 ds lcm HRXTEM Si 0 5nm ZnO 0 c20 52nm ZnO c NS UE M EC MN Hig 2b FHig 1 ds Scm HRXTEM ae ZnO c d 3Scm ZnO We 31 2 SAED Fig 3 ds 1cm ds Scm SAED d1cm 300W SAED ZnO
20. nO 100mmg 3mm Al 99 99 Smm x Smm Ar AQ URN NIU SS 100W 30 25W 120 50W 60 200W 13 300W 10 4mmTorr 300C 1cm 3cm Scm TEM JEM2100 X XRD TEM SAED XRD
21. r density 0 496Al Carrier density 1 396Al 6 Carrier density 1 796Al Carrier concentration cm 0 50 100 150 200 250 300 350 Power W b Fig 9 Changes of the carrier concentration of the film deposited on the distance from center position of 1cm a and 5cm b as a function of RF incident power 3 3 2 Fig 9 Fig 9a ds 1cm 25W THE 0 4 Al 1 3 Al 1 7 Al Fig 9b ds Scm 300W
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