A user's guide to MASTARe 2.0 - Advanced Silicon Device and
Contents
1. Roadmap workspace Preferences EN Choose value for these parameters gt Apply when you push button BULK DG or SOI m Technology Flavors kfield Kd Kappa xi TDep BULK EE fF 9 Xi TDep DG p os T ol 5 Tsv2 Tsv2 sp osiy osi 75 Ts Ts Color Check lt gt 1 o 1 o 9 Choose value behind booster button and check color of linked field m Technology Boosters BUTTON FIELD METALG Push Relax Color Check Polydepl 0 04 NES D STRAIN kmu 2 es 4 BALLISTIC kuss 1 3 1 of 1 FRINGE Fringing 1 3e 016 2 5e 016 lt gt 2 5e 016 Cancel Figure 2 Content of the Preferences file CAUTION the values of Kfield Kd Kappa Poly dep Kmu Kvs and Fring used in the ITRS 2003 profiles take often some intermediate values between the standard and boosted ones This results from how they were defined in the PIDS Excel spread sheet we have used the same values for having a full compatibility between the two tools The consequence of that is however that once having loaded for example the HP22nm node that is defined as DG and pushing the DG button you will not obtain the same results The good habit is thus to save an unaltered copy of the package as sent before all manipulation so as to be able to retrieve the original profiles in case of un cautious over writing The working space Devices The main dialogu2. Table 2 Parameters used in the Resistance Module The Booster Template The buttons in this field allow the user to switch one or several performance boosters which are Strained Silicon Metal Gate Ballistic Transport and Reduced Fringing Capacitance Once the performance booster is activated a set of predefined parameters accessible by the Preference option of the File Menu is loaded In order to trace the changes the parameter modifications with respect to the situation without boosters are highlighted in the main window The Table below summarizes the effect of each button When pressing the button again the booster will be switched off and the parameters are set to their default values Button Action Booster value Metal Gate Poly deplzO Strain Silicon Kmu 2 Ballistic Kvsat 1 3 Fringe Cfringe 1 3e16 Table 3 Default value of booster when using the template buttons The main dialogue window the submodules The module Pockets enables to take into account a non uniform lateral doping distribution in the channel due to pocket or halo implant This is very useful to fit experimental Vh Lgate curves To activate this module click on the corresponding check box The adjustable parameters are shown in the Table 4 For a physical interpretation of these parameters please refer to the annex A Pressing the Compute button will update the calculations Parameter Description Dime
3. MASTAR 2 0 User s Guide A user s guide to MASTARe 2 0 MASTARe2 0 is compatible with Windows 95 98 NT4 2000 amp XP Nevertheless some Windows display setups may be source of corrupted Mastar graphics If this is the case we advise to e setup standard fonts in the Properties Appearance window available with the right button click on the desktop Windows screen e adjust the screen resolution to 1024x768 pixels or more in the Properties Settings window available with the right button click on the desktop Windows screen B WASTAR 2 0 1 b8 Woikspace e IEH Roedment a E Dar tor CIE Ka 32945 ei MUnew 7 256007 Aen weg ms 207 m9 See 357 mW Wien usedM 003 s i DIBL 3 23 mW D EMI e Lopez eit MAITAR Lorum Mani Latz MATR is 72 077 mim Ge 170401 nium gr 2227 002 Alert Acarattides 150 xd Roos T2 180 Di b up Wi OD en Ou tenips port Pockets CI nsw D oF bem E sind Pock cone bode ae Fp T om Proj Arg del Ripe E m Std Dec del Ae 3 m Sid Dey D Ihres Mob morae feet parme 0a lloto Kra 713 mate 0A Db zeot Sat Velo Inpicw ma2 53 semar Kwe 1 t sl 4 e FG EI Red Reda Ihe 2258007 logate boil Fmde 1 dea O gong Gage 4l Signs T dmt rasis D s feg Sa pa 24018 Fam po gert 3 m f Tene TO KR Eee teat ee TL T rege ege
4. 300 KG Temperature TK TTT ULT HiK Oxide Phi ms D y Boosters module Fitting Parameters Gate stack Module Compute IG Improve Si02 20 Ad parameters Figure 3 The MASTAR main dialogue window of the Devices application The content of this window constitutes what is called and can be saved as the CMOS node profile The window contains furthermore modules for the computation of the series resistance the parasitic effects like DIBL and SCE the carrier mobility the EOT T Skotnicki ST F Boeuf ST M M ller Philips p 5 19 MASTAR 2 0 User s Guide correction by poly depletion and quantum effects as well as pocket doping The sub modules are activated when clicking on the corresponding check boxes Parameter Description Dimension Late Physical Gate Length nm Tox Physical Gate Oxide Thickness nm Nen Channel Doping w o Pockets atm cm X LDD Junction Depth nm Vad Operation Voltage Gate and Drain Voltage V Dark Space EOT of the Charge Free Space at the Channel Interface A Poly Depl EOT of the Depletion Zone of the Poly Si A Table 1 Description of the main input parameters from the main dialogue window Parameter Description Dimension x Percentage of Channel Resistance Ren Val none Reons Side Constant Series Resistance Source Q Rsource_tot Resulting total Source Resistance Q
5. Change Literature Perf option the corresponding window will be opened cf Figure 19 If you don t wish to display any file delete the file name which appears in the lower box The file itself can be suppressed using the Suppress button from your keyboard Please remind that only one file can be shown at once and that the last file will be automatically reloaded when restarting MASTAR T Skotnicki ST F Boeuf ST M M ller Philips p 21 19 MASTAR 2 0 User s Guide Choose an Literature Perf to display ES List of Literature perf available in folder Perf of MASTAR gt Choose one to display content on graph lon loff Cloud Literature Pet Push Suppr key to delete selected file displayed Literature perf toto Ipp Figure 19 Choosing user defined data files on the Cloud graphics The workspaces Roadmap The workspaces Roadmap a global view Roadnao rot Goud Pict MK S See Name HPI Nasta IPI Mais cr e HP45 Maia iP2 Waris Carcure zat Comet Bond p t d KE ET EE es e es Luc w um Ee d PN 3 ac fj 05 Sonne D EE H i 95 O3 Sie DR Vtt a TS sd a 52013 7 en 10 D MO aw 100 1200 1400 1600 31600 2000 2200 24 298 lont ym ur qx E os I 0 Pe E en Dies NASTAR graphics Rosdmap 2 Roadmap CVA Roadmap Get lot 2002 2x4 2006 2 2010 212 20m4 2m6 Year Figure 20 Global vi
6. TE vy a T Ee Dae det Men 3 Tdeppope GE m H ICT 10 ees E m Ele ore mi oo Dn on von tmi We TOO e lp Tegecntz gan BS e Deet 500 m Le 7105 mm Figure 1 Mastar 2 0 global view of the workspace Device The philosophy of MASTAR Mastar 2 0 is a computing tool especially conceived for the calculation of the electrical characteristics of advanced CMOS devices such as planar bulk transistors Double Gate DG or Silicon On Isolator SOI devices The calculation is based on T Skotnicki ST F Boeuf ST M M ller Philips p 1 19 MASTAR 2 0 User s Guide analytical drift diffusion equations which depend directly on the major technological parameters such as gate length channel doping oxide thickness etc This application allows the user to evaluate immediately the impact of these technological parameters on the main transistor characteristics such as the threshold behavior performance values or time delay Moreover the influence of physical secondary parameters such as mobility poly depletion and dark space can be visualized giving a deep insight in the physics of CMOS devices Due to a possible limited validity of the drift diffusion models with respect to very short devices the MASTAR predictions should be considered as worst case The installation of the MASTAR 2 0 package Mastar 2 0 is delivered as a compressed package of files After reception please create a MAS
7. calculation interval must be entered as well as the incremental step of this parameter The calculation is launched when clicking on Start The current set of calculated data points can be saved by clicking on the Save Data button The files will then be stored in the current directory and will have the extension per These per files can be added on or removed from the Cloud Graphics via the Cloud Data Display function from the Graph menu or directly by a click on the right button of the mouse It is furthermore possible to re inject the parameters already used for the generation of a data cloud into the Generate Ion Ioff cloud data place the cursor on the cloud symbol on the left upper part of the window a pop up window of the underlying calculation conditions appears By clicking on the triangular button the Generate Ion Ioff cloud data window opens containing this parameter set Generate lon loff Data Cloud Lgate o nm to o nm step fio nm Tox fi nm to fi nm step o nm Nbulk fie 018 cm to te o18 crn step te 018 cnr xi jo nm to po nm step po vd 07 v of v sefi Rconst 100 Ohm to 100 Ohm step 100 Ohm Start Save Data Close Close Figure 17 The Ion Ioff Data Cloud parameter window T Skotnicki ST F Boeuf ST M M ller Philips p 20 19 MASTAR 2 0 User s Guide Display of Literature Data on the Ion Ioff cloud chart The Ion Ioff graphics has been designed in order to enable compariso
8. s Guide parameters and plot files containing sets of performance values Via the Modules menu it is possible to access to secondary and optional technological parameters The Graph menu enables to modify the data selection and their presentation in the main graphics Finally the Compute menu allows the user to update the secondary graphics Most of these functions can be equally accessed placing the cursor on the object you want to to modify and clicking on the right mouse button The main output windows numerical values and the Ion Ioff graphics The calculations are executed via the Compute button from the main dialogue window The principal electrical characteristics will be displayed numerically in the upper output window named MASTAR 2 0 Result The lower window gives access to secondary engineering parameters MASTAR 2 0 Result lon 732 9 yA um tsat off 20382 m S 81 37 mV dec loff 6 63e 001 n um Vtlong off J 681 43 mV th new 2 337 007 A um IG 4 30e 004 n amp gm Vtlhsat on 233 82 mV SCE 221 34 mV ig 827e 003 Avent Vton Vtoff used 30 00 mY DIBL 25627 mW Figure 4 The upper output window MASTAR 2 0 Results Output Parameter Description Dimension Ton Drain Current for Veate Varain Vad uA um Je Channel Leakage Current for Mee 0 and Varain Vaa nA um Ig off state Gate Leakage Current thro
9. w 1008 nm Figure 11 The Load Profile dialogue window from the File menu Some basic definitions A profile is defined as a complete set of input parameters as listed in Table 1 It can be created or loaded by the file menu It is saved as a hidden file with the extension sav and is not directly accessible to the user A plot file is an output file containing a list of Ion Ioff values The extension of these files is plt Plot files can be created either by a text editor or starting from a set of previously defined parameter profiles Only in the latter case the plot file is linked to the underlying profiles which enables automatic modification when activated Plot files can be added on the principal Ion Ioff graph If a plot file is activated and its T Skotnicki ST F Boeuf ST M M ller Philips p 14 19 MASTAR 2 0 User s Guide values are linked to a list of profiles the Ion Ioff values plotted on the graph are updated when modifying certain globally defined input parameters such as the mobility The definition of new profile files can only be done on the File menu the loading of profiles and the manipulation of plot files can also be done using a shortcut clicking on the right mouse button when the corresponding graphics window is activated Create Plot File x You can create new Plot file or Modify a existing Plot file in choosing in the list just below List of Plot Files HP2003_Ma
10. 018 to 1 00e 019 step 1 00e 018 xi 20 00 to 30 00 step 1 00 wdd 1 00 to 1 00 step 0 10 Rconst 100 00 to 100 00 step 100 00 Figure 15 Data cloud Pop Up Window The Compute Menu This menu contains all computational commands concerning the auxiliary graphics and the cloud graphics Vth L threshold over gate length CV I L gate delay over gate length for Ioff const I L Ion current over gate length for Ig const Ion Tox Ion current over oxide thickness for Le const Ion Ioff L Performance over gate length Ion loff Cloud calculation of a performance data cloud All Clicking on All will open the Compute All window This window allows the user to update the presented data points in all auxiliary graphics windows To enable comparison with previously computed data the new data will be applied only on one red or blue curve the one selected in the dialogue window while the second one remains unchanged The graphics are automatically regenerated when clicking on the Start button Vth L Via this dialogue window it is possible to update the displayed data points in the graph Vth L while all other auxiliary graphs remain unchanged Again the user can decide whether the new generated data should be applied for the red Vth_1 or the blue curve Vth_2 Moreover the user can define the interval used for calculation and display cf Figure 16 Selection Vth 1 C Vth 2 Lgate 20 nm to
11. 3000 om Figure 16 The Vth L calculation window CV Ion L and I L T Skotnicki ST F Boeuf ST M M ller Philips p 19 19 MASTAR 2 0 User s Guide The submenu CV Ion L and I L from the Compute Menu will open the corresponding dialogue window The user can now select which curve he wishes to be updated and define the corresponding computational window The CV Ion L and I L graphics are simultaneously updated when clicking on the Start button Note that Ior is kept constant during the calculation of the La values Ion Tox This submenu allows the user to update the Jon Tox graphics Choose the curve by clicking on the corresponding button and update by clicking on Start Note that Lu is kept constant during the calculation of the Le values Ion Ioff L In order to update the Jon Ioff L graphics click on the corresponding submenu from the Compute menu In the dialogue window select one curve and click on Start to update the graphics The performance data is calculated on a fixed series of gate lengths Leate 25 30 40 50 60 70 80 90 et 100 nm Ion Ioff Data Cloud The Jon Ioff Cloud submenu opens the dialogue window called Generate Data Ion Ioff Cloud In this window the user will define the variation of the main technological parameters used to generate the new performance data cloud These parameters are Logo Towo New Xj Vaa Reonst For every parameter the lower and the upper limit of the
12. TAR folder where you copy the whole stack of files For execution just click on the MASTAR2 0 exe file Whenever you create or modify files e g profile files plot files or result files within MASTAR 2 0 these files will be generated or updated in this current folder In an analogous way profile or plot files can only be loaded if they are located in this current folder So make sure that they haven t been moved to a different folder A quick view on MASTAR s principal functionalities Having started Mastar 2 0 the user will be asked to choose between the workspaces Device and Roadmap The workspace Device is useful for the understanding of the characteristics and of the physics of one given technology whereas the menu Roadmap is especially conceived for constructing CMOS roadmaps composed of different technology flavors Bulk SOI DG etc per node The choice of technology flavor by selection of Bulk SOI or DG buttons affects automatically the model of SCE and DIBL and some other parameters e Button Bulk 2 El 1 Ai Tox el Tdep Lel Lel Lel SCE 2 0x q4 X El DIBL 2 5xVq X EI for other equations see Appendix B E Xj entry and Tdep bulk theory 2 Kfield 1 effective field reduction factor 3 Kappa 0 if Kappa 0 then bulk theory is used for calculation of the subthreshold slope coefficient S see equations if Kappa lt gt 0 then S Kappa 4 Kd 1 if Kd 1 then Bulk theory is used for
13. age is automatically adjusted to keep the off current constant Graphical output The graphical output of all loaded profiles is automatically displayed on the graphics on the right side The upper graph shows the Ion Ioff values either on the conventional Ion Ioff chart or on a Ion Ioff cloud chart Clicking on the right mouse button you can carry out some modifications on the plot such as changes in the scaling Modify Scale and the selection or presentation of the data points Load and Unload Plot and Create Modify Plot The lower graphics has two presentations you can choose between a presentation of the gate delay CV I versus the year of introduction as specified on top of every profile and Ioff amp Igate versus the year of introduction Note that you can disable the plotting of the introduction year on the x axis just use the right mouse button and deactivate Enable year In the graphics window the data points are now ordered from the left to the right as they appear in the profile frames T Skotnicki ST F Boeuf ST M M ller Philips p 24 19 MASTAR 2 0 User s Guide Mastar On Line Service If you have any questions or suggestions please send an e mail to frederic boeuf Q st com T Skotnicki ST F Boeuf ST M M ller Philips p 25 19 MASTAR 2 0 User s Guide References l T Skotnicki G Merckel et T Pedron The Voltage Doping Transformation A New Approach to the Mod
14. alue of the corresponding parameter e Button Strain e Evaluation of high mobility materials by setting Kmu parameter default values standard 1 boosted 2 that has the effect of multiplying the universal mobility by Kmu long channel Button Ballistic e higher carrier saturation velocity by setting Kvs gt 1 it may be used to mimic the ballistic transport with all the precautions this implies default values standard 1 boosted 1 3 e Button metallic gate e Simulation of the metallic gate by setting Poly_depl 0 default values standard 4 for NMOS amp 6 for PMOS boosted 0 e Button Fring e Simulation of the effect of reduced gate fringing overlap capacitance by setting Fring_Capa default values standard 2 4e 16F um boosted 1 3e 16 F um T Skotnicki ST F Boeuf ST M M ller Philips p 3 19 MASTAR 2 0 User s Guide The default values of the parameters Kfield Kappa Kd Kmu Kvs MetalGate and FringCapa can be set by the user by modifying the Preferences file see Figure 2 in the File menu in the working space Devices These default values will be used when pressing a technology flavor button or a technology booster button It has to be noted that in addition to changing the default values in the Preferences file the user can impose manually any arbitrary value of any parameter by just modifying its value in the corresponding field of both Device and
15. ation Parameter Description Dimension Default Gamma Scaling Factor for the Lateral Diffusion none 0 8 Las Lg gamma X Zetal Scaling Factor for the DIBL Drain Induced none 0 6 Barrier Lowering Zeta2 Scaling Factor for the SCE Short Channel Effect none 0 64 Kappa If the value is not 0 S takes the entered value mV dec 0 In I4 at the threshold voltage used to calculate S A 5e 7A Innew activate sthe doping dependance of ith calculation delta Shift between Vu on and Ma off V 0 03 Kd Reduction factor of the d coefficient body effect none 1 for SOI and DG if Kd 1 then the Bulk theoretical value of d is used Table 6 Description of the user defined settings A special feature is the button Ioff_c which is located in the lower right part of the main dialogue window When this button is activated the Nbulk value will appear gray Indeed the bulk doping and thus the threshold voltage will be automatically adjusted at a level which gives the previously entered constant Ioff value This feature is very useful for the evaluation of technological options as you can get rid of threshold variation effects The main dialogue window The Menu Bar On the menu bar several submenus are accessible the File menu enables the creation and modification of profiles corresponding to a set of technological input T Skotnicki ST F Boeuf ST M M ller Philips p 7 19 MASTAR 2 0 User
16. c On this graphics you have the possibility to display in addition to the generated data user defined Ion Ioff data e g recent literature performance data for comparison reasons The corresponding files are stored with the extension lpp For more details please refer to the Display of Literature Data on the Ion Ioff cloud chart section When placing the cursor upon the literature performance point a window displaying the Ion Ioff values shows up The set of parameters on which the cloud generation is based on can be visualized when placing the cursor upon the cloud symbol in the upper left part of the graphics window a pop up window appears summarizing the calculation limits and steps It is furthermore possible ton inject directly these parameters into the Generate Ion Ioff cloud data window by clicking on the triangular button inside this window T Skotnicki ST F Boeuf ST M M ller Philips p 11 19 Vth L threshold over gate length MASTAR 2 0 User s Guide The Vth L graphics shows the dependence of the threshold at Varain Vaa on the physical gate length Leate Two curves are presented in this graphics which can be calculated independently allowing the user to compare the impact of the different technological input parameters By default the saturated threshold voltage V satoff is calculated In order to obtain the linear threshold voltage please choose V4 0 1 V in the main dialogue window Pocket effec
17. calculation of the body effect coefficient Kd see equations T Skotnicki ST F Boeuf ST M M ller Philips p 2 19 MASTAR 2 0 User s Guide e Button SOI this button corresponds to FD SOI technology In the same equations as for Bulk the following substitutions are made automatically 1 Xj Tsi and Tdep Tsi Tsi becomes an entry instead of Xj 2 Kfield 0 5 effective field reduction factor 3 Kappa 75 to set the subthreshold slope value to 75mV dec if Kappa 0 then bulk theory is used see equations if Kappa lt gt 0 then S Kappa 4 Kd 0 5 to reduce the body effect coefficient by factor 2 if Kd 1 then Bulk theory is used see equations e Button DG this button corresponds to symmetrical Double Gate technology also called GAA gate all around In the same equations as for Bulk the following substitutions are made automatically 1 Xj Tsi 2 and Tdep Tsi 2 Tsi becomes an entry instead of Xj 2 Kfield 0 5 effective field reduction factor 3 Kappa 65 to set the subthreshold slope value to 75mV dec if Kappa 0 then bulk theory is used see equations if Kappa lt gt 0 then S Kappa 4 Kd 0 to reduce the body effect coefficient by factor 2 if Kd 1 then Bulk theory is used see equations Whatever the choice of technology flavor the user can also evaluate the impact of the following technology boosters by pressing a corresponding button or by setting manually the desired v
18. e window a global view T Skotnicki ST F Boeuf ST M M ller Philips p 4 19 MASTAR 2 0 User s Guide After clicking on the Devices button the main dialogue window will appear displaying the principal technological parameters and computational choices These parameters can be directly entered or modified starting from a given value using the adjacent buttons The input parameters are listed and explained in Table 1 5 MASTAR 2 Device HR File Modules Select Graphics Compute Menu Bar Technology template Loaded profile s name Loaded plot s Booster template name E nm Gate Length Buttons for 1 2 nm Oxide Thickness Paene SE 6 63e 018 cm Chan Doping Main Technologies adjustement Parameters ul nm Ldd Depth Main Technological Parameters Pocket Module ay 2e 013 at cmf Pock conc 25 e 10 nm Proj Range del Ref 5 nm Std Dev del Rl 3 nm Std Dev Long Ith new Mob Improv fact gamma 9 L Lgate Kmu 1 3 gamma zeta 1 D Dibl zetal Sat Velo Improv zeta2 0 64 SCE zeta2 Kuss 7 kappa 86 S setto kappa if tf Eff Field Reduc Ith 225 amp 007 logloff log lth Kfield 1 dela 0 Vton Vtoff Fringing elta 1 is Capacitance Sigma 1 d multipli factor eg SOLDG 24e 016 Fum Check box to set constant lo A nm bm LI during calculations poly depl 14 nm lv Temp
19. eling of MOSFET Short Channel Effects Electron Device Letters Vol 9 N 3 1998 T Skotnicki G Merckel et T Pedron A New Punch through Model based on the Voltage Doping Transformation IEEE Transaction on Electron Devices pp1067 1086 1988 T Skotnicki G Merckel et T Pedron Analytical Study of Punchthrough in Buried Channel p MOSFETS IEEE Transaction On Electron Device Vol 36 N 4 1989 T Skotnicki G Merckel et A Merrachi New Physical Model For Multiplication Induced Breakdown in MOSFETS Solid State Electronics Vol 34 N 11 pp1297 1307 1991 T Skotnicki G Merckel and C Denat Triggering and Sustaining of Snapback in MOSFETs Solid State Electronics Vol 35 N 5 pp 717 721 1992 T Skotnicki C Denat P Senn G Merckel and B Hennion A New Analog Digital CAD Model for Sub halfmicron MOSFETs IEDM 1994 T Skotnicki Heading for decananometer CMOS is navigation among icebergs still a viable strategy ESSDERC 2000 Invited Paper T Skotnicki Encyclop die Technique de Ing nieur Transistor MOS et sa Technologie de Fabrication Cahier E 2 430 f vrier 2000 T Skotncki and P Boeuf Introduction la Physique du Transistor MOS EGEM to be published T Skotnicki ST F Boeuf ST M M ller Philips p 26 19 MASTAR 2 0 User s Guide Annex A Illustration of the Pocket Module Parameters Ax R 2AR sin9 2AR cos0 L Ax AL 2 p
20. ew of the workspace Roadmap T Skotnicki ST F Boeuf ST M M ller Philips p 22 19 MASTAR 2 0 User s Guide MASTAR2 Roadmap HP Delete Profile Button Load Profile Button Save Profile Button Access to the submenu Option for calculations keeping loff 2 const Input Parameters 0 64 83 2 5e007 Output Figure 21 Description of the profile window in the workspace Roadmap The workspaces Roadmap have been especially created for the comparison between different CMOS technologies or technological options within a CMOS technology For this purpose the workspace is subdivided in three different application families which are LSTP Low Stand by Power LOP Low Power and HP High Performance Each workspace is separated in two functional parts on the left side up to 6 different profiles can be loaded visualized and modified independently On the right side two graphics are shown on the upper graphics the performance values in terms of Ion Ioff data points are plotted The graphics below shows either T Skotnicki ST F Boeuf ST M M ller Philips p 23 19 MASTAR 2 0 User s Guide the gate delay or the Igate and Ioff values versus the year of introduction as defined on the profile windows Loading and modifying profiles Profile files can be loaded in the window by clicking on the yellow button and by choosing the desired profile file from the l
21. ist Once loaded in the window all input variables can be modified If you want the changes to be permanent just click on the green button the profile file will then be updated The full menu The complete option menu associated with a given profile can be accessed clicking on the double arrow symbol which is next to the compute button The following features can be chosen Load Profile same as the shortcut by the yellow button Save Profile same as the shortcut by the green button Save Profile As saves the profile under a different name Close Profile closes the profile in the corresponding window Enable Pocket activates the Pocket Module inside the profile window Label Display allows the user to change the position of the data label with respect to the data point Include into allows the user to insert a data point into a line Calculation options and display of the numerical results On the bottom of every profile column the basic electrical characteristics are displayed such as Ion Ioff Eeff Vtsat CV I DIBL and Igate The values are updated whenever you confirm the changes done on an input parameter with the Compute button For performance comparisons you might wish to keep the Le value constant during the modification of parameters To do this click on the button with the green symbol on the upper left side of the window and activate Keep Ioff constant In this case the channel doping and thus the threshold volt
22. mented and the doping of the poly Si of the gate stack Parameter Description Dimension Default Next Dopant Concentration in the LDD extensions atm cm 1e20 Npoly Dopant Concentration in the Poly Si of the Gate atm cm 3e20 Stack Table 9 Description of the content of the Other Doping module The Graph Menu T Skotnicki ST F Boeuf ST M M ller Philips p 16 19 MASTAR 2 0 User s Guide This menu contains only one the function Select Graphics By this submenu the user can select the output graphics to be displayed in the workspace Clicking on the Select Graphics command opens the corresponding dialogue window The hidden graphics are listed on the left whereas the visible graphics appear on the right side Select the graphics name and click on Add or Remove in order to show or hide graphics on the screen Select Graphics EN Hide mueff_Eeff ES lt lt Remove lonloff_Cloud lonloff_L Vth L Figure 13 The Select Graphics dialogue window Modification of the Graphics common features All other graphics features are accessed directly placing the cursor on the corresponding graphics and clicking on the right button of the mouse The following options are available on all graphics Modify Scale enables to change the maximum and minimum values of the x and y axis and to go from linear to logarithmic scaling and vice versa Cursor Position a window pop
23. ns with user defined data e g performance data points from recent publications enabling thus reverse engineering i e to identify the technological options necessary to achieve these performances By default MASTAR contains a file named Literature Perf lpp containing a list of recent literature values which is loaded in the Cloud graphics window For editing e g adding removing or selecting deselecting data points please click on the right mouse button and choose the option Edit Modify Literature Perf the literature editor will be opened cf Figure 18 Every line of the text file corresponds to a data point containing the Ion value in uA um the Ioff value in nA um the label and its orientation to appear in the graphics window All data points are distinguished by color shape and label Data points are deselected when two slash characters are put in front of the corresponding line If you wish to create a new lpp file please use Save AS x Wi AE Put at the begining of line for comment IHRE For text Orientation you can choose between West E East H NWV MorthvVest NE NorthEast SE SouthEast OO ii flon pA um loff n amp uim Name Orientation 710 40 ToshibaD 9 550 70 Fujistu0 65 875 70 Fujistu1 700 100 Toshiba 2 Figure 18 The Literature Editor Once you have created several lpp files you can select which one you would like to display To do this please use the
24. nsion Default C roches Pocket Implantation Dose atm cm 2e13 Angle Pocket Implantation Angle degrees 25 T Skotnicki ST F Boeuf ST M M ller Philips p 6 19 MASTAR 2 0 User s Guide R Implantation Depth nm 65 del KR Vertical Pocket Extension nm 23 del R Lateral Pocket Extension nm 32 Table 4 Parameters used in the Pocket Module see Annex A for more details on the pocket related parameters The Mobility module contains several scaling factors or performance boosters for the effective mobility the saturation velocity and the effective field which might be appropriate in the case of advanced CMOS architectures such as strained Si fully depleted devices etc Parameter Description Dimension kmu Scaling Factor for the effective Mobility W Kin none kys Scaling Factor for the eff Saturation Velocity Vsat Kys Vsat none kfield Reduction factor of the Eeff for advanced archtitectures none Table 5 Description of the parameters used in the mobility computation In the user defined settings module several parameters can be modified concerning the calculation of SCE DIBL S and Ioff The default values have been adjusted to fit the most recent planar CMOS technologies CMOS 90 and 65 nm and literature data IEDM 02 and VLSI 02 We recommend you to save a back up copy of MASTAR that will allow you to recover the default values of all parameters in case of modific
25. ocket Annex B The Mastar Equations after Refs 6 9 If K 0 then Vin off kT e Ty d logl og logI 7 S 2 In10 1 q OX dep EE W Ith 2 5x10 A else L S K W Ith _new 5x107 A 8 SE ka Ze E oe Tjep ES Qo V T _el Se Tonys Dark space EA dent ON actual 2 jg cg bebe nMOS y 330572 E Her Hac Vs cm cm aal MV MOS 90E D A Vs eff Se 2 nMOS y 1450E 2 My nMOS E Kl 6 Von _ 9 Vin br Ys om 2 ZE GI el DI el 2 cm E d MOS u 140E Vg 2V Vank d d dk pMOS E g K pea ZA D 2 HI _el OT ox _el Vu on Kaap A Va Vos Vu on Esi 1 W Cu uc eR Lote rove VV ox e Tus dsat0 2 eff ox _ el L gt dsat z 2 Kg 1 gt Ee Ky e d Kq SE Vit 1 Td Hag 2429F Vp LE Vor T Skotnicki ST F Boeuf ST M M ller Philips p 27 19 MASTAR 2 0 User s Guide K qN ch dep I I dsatO Bt EE E 2R 1 RI 14 5 dsatO 5 dsatO C ad20r V Vor Vor L E 1 d Dark_space 2 4 A EOT electrons Poly dep 4A EOT n gate 6A EOT p gate et 3 5A EOT holes EOTST phys sio2 Eactuel 24 Jos SALW x NL Te La phys Parameters for J a 1 44 10 A cm b 4 02 V c 13 05 V d 1 17 A T Skotnicki ST F Boeuf ST M M ller Philips p 28 19
26. ork space using the Select Graphics command from the Graph Menu Recalculation of the displayed data is done via the corresponding submenu in the Compute Menu Most of these auxiliary graphics contain two curves which can be calculated independently This allows the user to compare current data points with previously generated data The following graphics are available T Skotnicki ST F Boeuf ST M M ller Philips p 10 19 MASTAR 2 0 User s Guide Ion loff Cloud MASTAR lonloff_Cloud 1e 003 current current cloud cloud10 Cloud Zu cloud12w oooooe cloudi4w 1e 002 1e 001 E 2 S ren SEN Bi Infineon IBM1 24 e Bud a oH IBM1 2V SE E Kee d i ci e 2 La Ga RIS on O OxXth CS 200 0 400 0 600 0 800 0 1000 0 1200 0 1400 0 lon pA pm Figure 7 The cloud graphics this presentation allows the user to explore the performance domain spun up by user defined intervals of the main technological parameters such as gate length oxide thickness junction depth etc and compare it with literature data The Zon Ioff Cloud graphics is a useful tool in order to explore the performance limits for a given transistor generation cf Figure 7 Clouds of performance data points can be generated and displayed on a Ion Ioff graphics by simply imposing intervals and incremental steps for the main technological input parameters such as gate length oxide thickness supply voltage et
27. s up on the right upper corner of the workspace indicating the actual position of the cursor inside the selected graphics Hide Graph hides the graphics Special features on the Ion Ioff graphics Load Unload Plot This submenu enables to add or remove series of data points on the Ion Ioff graphics for comparison with the current data point For this purpose the desired data points have to be entered previously into a plot file with the extension plt Plot files can be created via the File Menu or by the Create Modify Plot option directly from the graphics If the plot file with the desired performance Ion Ioff data points already exists just click on Load Unload Plot the Display Plot File Dialogue Window is then activated To add or remove some data points click on the corresponding plot file in the list on the left right side then click on Add or Remove T Skotnicki ST F Boeuf ST M M ller Philips p 17 19 MASTAR 2 0 User s Guide Display Plot File EN Item with this Icon means Plot file created from text file HT Other with this Icon are Plot file controled by application Available Plot Files on Disk Selected Plot Files on Graph 4Plot SHP2003_ITRS plt i T ASPlot LOP2003 plt ji Ad 2 El Plot LSTP2003 pl E Plot SHP2003_ITRS plt E Plor ALOP2003 ITRS plt AMPlot LstP2003 ITRS plt Plot HP2003_Mastar plt Remove Plot LstP2003_ITRS plt Figure 14 The Display Plo
28. star LOP2003 LSTP2003 Options on the Display Label label display List of Profiles cted Frotiles Selected profile files Add gt gt Remove S Create Modify Cancel Figure 12 Dialogue window for the creation of a plot file Creating a profile In order to save the current set of input parameters in the main dialogue window click on the File menu and select Save Profile as A new dialogue window opens where the profile name can be entered If the name is already used a warning will appear Loading a profile A predefined set of input parameters can be loaded by selecting View Load Profile from the File Menu You can also access to this feature by the right mouse button directly form the graphics window In both cases a dialogue window opens displaying the available profiles Selecting a profile file its content will be visualized T Skotnicki ST F Boeuf ST M M ller Philips p 15 19 MASTAR 2 0 User s Guide in the lower part of the window Clicking on Load will transfer the parameters into the main dialogue window The numerical and graphical results will be updated automatically Saving the modifications of a profile If you wish to maintain the modifications done on a previously created profile file choose Save Profile from the File Menu Deleting a profile In order to delete an existing profile file use the Delete profile command from the File Menu Crea
29. t File Dialogue Window Create Modify Plot as described for the similar option in the File Menu with the only difference that it is immediately displayed on the graphics Load Profile as described in the File Menu Delete Profile as described in the File Menu Merge ghost to actual point sets or moves a permanent marker behind the actual position of the current data point in order to trace the changes Delete Ghost unsets the marker Display Node Info A pop up window displaying the values is shown when you point on a data point of the graph Special features on the Cloud graphics Data on Cloud This submenu enables to add or remove series of data points on the Ion loff Cloud graphics which have to be listed in data files having the specific extension per These files can be generated by the Ion Ioff Data Cloud command from the Compute Menu or with the New Cloud Command of this submenu New Cloud as described in the Compute File Cloud Pop up window When placing the cursor on the cloud symbol displayed next to the cloud name on the left upper part of the window a pop up window appears containing the parameter set which has been used in the Generate Ion Ioff Cloud Data window to generate this data cf Figure 15 T Skotnicki ST F Boeuf ST M M ller Philips p 18 19 MASTAR 2 0 User s Guide toto Profile Base HP90 Lgate 50 00 to 70 00 step 10 00 Tox 1 00 to 1 30 step 0 10 Nbulk 1 00e
30. t Oxide Thickness in Inversion Cox alec Gate Capacity in Inversion F um JA sub Depletion Depth in the Substrate nm Cop sp Depletion Capacity in the Substrate F um ANA Average Channel Doping w Pockets atm cm Delta L AI 2 Lateral LDD Diffusion nm Letec Electrical Gate Length LA Leate AL nm Tap Poly Estimated Depletion Depth in the Poly silicon nm EI Electrostatic Integrity Table 8 Description of the parameters in the lower output window T Skotnicki ST F Boeuf ST M M ller Philips p 9 19 MASTAR 2 0 User s Guide MASTAR lon loff current Ld lg curent N O LOP2003 LSTP2003 HP2003 ITRS LOP2003 ITRS LstP2003 ITRS HP2003 Mastar enusuet o e e o E 1 uz ZS 400 0 800 0 1200 0 16000 20000 24000 lon HA um Figure 6 The principal graphical output window the Ion loff Graph displaying the current data point and some user selected data The central output window is the Ioff Ion chart cf Figure 6 The current performance data point is shown as a red point in this window In addition predefined plot files lists of Ion Ioff values can be added on this plot via the Graph Menu or by clicking on the right mouse button when the cursor is placed on the graph Some more graphics In addition to the central Ion Ioff chart MASTAR offers a variety of other useful graphical representations These secondary graphics can be added on or removed from the w
31. the evolution of the on current Zo at J constant over the gate oxide thickness Two curves are presented in this graphics which can be calculated independently MASTAR lon_Tox lonTox1 lonTox2 Current 0 5 1 0 15 Tox phys nm a MASTAR lonloff_L 1e 004 1e 003 1e 002 D zm Jon Loft lon loff2 25 nn Gr Bio Bs0 Ms0 Boo 200 0 400 0 600 0 800 0 1000 0 1200 lon pA um b Figure 10 The Ion Tox graphics a and the Ion Ioff L graphics b Ion Ioff L performance over gate length The Jon Ioff L graphics presents the performance data points calculated for a set of physical gate lengths Leate 25 30 40 50 60 70 80 90 et 100 nm Mastar for advanced users description of the menus The File menu creation and modification of profiles and plot files T Skotnicki ST F Boeuf ST M M ller Philips p 13 19 MASTAR 2 0 User s Guide Viewer Profile EN Choose Profile Selected Profile File Modele Bulk Year 2003 Lgate 65 nm vdd Tv Tox 1 6 nm Nbulk 309e 018 cm Rsour Rean f 0 xj 358 nm Rconst 180 Pockets NSub 3 2e 018 cn Rp 10 nm Content of the selected Dose 5 2e 013 at cn del Rp E nm profile File ghi del RIS 3 nm Kmu 1 Kys 1 Kfield 1 Fringing Capacitance 2 5e 016 Fum Dark Space 4 A Phi_m 405 V Poly Depl 4 IG Im 10 prove
32. ting and modifying a plot file The first way to create a plot file consists in creating a text file with the extension Dit in the current folder containing a series of Ion Ioff values This can be useful when you want to edit a list of literature data Every performance data point has to be defined in the following way label for the specific Ion lop data point i Ion Ion value of data point i uA um Ioff Le value of data point i nA um label for the specific Ion Iog data point j Alternatively a plot file can be created using the command Create Plot File from the File menu or directly by a click on the right mouse button from the graphics window Doing this a dialogue window appears you can now choose the name of the plot file to be created The performance data points can be chosen via the corresponding profiles which are listed on the left side of the window select the desired profile and click on Add The Ion Ioff data point calculated using these specific profile parameters is then appended to the plot file Once the list of data points is completed just click on the Create button to save your selection of data points In a similar way the data selection in existing plot files can be modified The graphical visualization on the Ion Ioff graph is finally done via the option Load Plot for more details refer to the corresponding paragraphs Other Dopings Two parameters appear in this window the LDD extension doping not yet imple
33. ts on the threshold curve can be reproduced when activating the pocket window In this case the channel doping refers Nen refers to the doping of a long channel device MASTAR th_L tl t2 Current 0 0 1e 001 1e 002 1e 003 Linm Vthlongunitorm jp RR ERR EELER REEL DEEE PL b Figure 8 The Vth L graphics an example of the MASTAR Vth L plot with and without activating the pocket module I L Ion over gate length Jun const The I L graphics shows the dependence of the on current Ion on the gate length Late For better comparison Lu is kept constant during the calculations via a simple threshold voltage adjustment by channel doping correction MASTAR Ion L Ionm iummg ionli lonL2 Current 20 0 40 0 600 Lgate nm 80 0 100 0 120 a MASTAR C I_L Gdelay ps CVIL1 e Cv1L2 Current 200 40 600 Lgate nm 80 0 100 0 120 b Figure 9 The Ion L graphics a and the CV I_L graphics b CV I L gate delay over gate length Jun const T Skotnicki ST F Boeuf ST M M ller Philips p 12 19 MASTAR 2 0 User s Guide The CV I L graphics indicates the gate delay calculated by v CV Don Leate Also for this presentation Je is automatically kept constant during the calculation to enable a better comparison Ion Tox Ion over gate oxide thickness Lu const The Ion Tox graphics shows
34. ugh the nA um Drain Gate Overlap Veare 0 and V arain Vaa I Capacitor like Gate Leakage Current Voare Vaa A cm Na Channel Doping w o Pockets atm cm Visatoff Saturated Threshold Voltage Veae Varain Vaa used mV for the extrapolation of I Vitong off Saturated Threshold Voltage for infinite gate length mV Visat on Saturated Threshold Voltage used for the Zon mV calculation Visaton gt Visatoff Mac Vio used Used Shift between the two Threshold Definitions V S Sub threshold Slope mV dec Ith Current at threshold A um SCE Short Channel Effect mV DIBL Drain Induced Barrier Lowering mV Table 7 Description of the parameters of the upper output window T Skotnicki ST F Boeuf ST M Miiller Philips p 8 19 MASTAR 2 0 User s Guide MASTAR 2 0 Result Eeff 0 81 MV cm Tox elec 25 00 A DeltaL peff 288 43 cmf Vs Cox elec 1 38e 014 F um Lelec peff Cox 1 72e 002 F Vs Tdep_sub 20 02 nm Tdep_poly e TH nm nm nm CgVdd lon 1 00 ps Cdep_sub 22e 015 F um El L invert 0 00 ps Nch 3 20e 018 at cm3 libre libre Figure 5 The output window Results2 Output Parameter Description Dimension E Effective Field used for the Mobility Calculation MV cm Heft Effective Mobility cm Vs u C Capacity times Mobility F Vs Cy ValL Gate Delay ps T sert Inverter Delay not yet implemented ps E Equivalen
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