Renesas HSG2005 User's Manual
Contents
1. 0 350 ZE 0 225 Ordering Information Part Name Quantity Shipping Container HSG2005TB E 2000 pcs 178 mm Reel 8 mm Emboss taping Note Therefore especially small contact area of terminal miss contact may occur if inadequate soldering condition is applied Contact Renesas sales office for any question regarding recommended soldering condition of Renesas Rev 4 00 Jun 21 2006 page 12 of 12 RENESAS Renesas Technology Corp Sales Strategic Planning Div Nippon Bldg 2 6 2 Ohte machi Chiyoda ku Tokyo 100 0004 Japan Keep safety first in your circuit designs 1 Renesas Technology Corp puts the maximum effort into making semiconductor products better and more reliable but there is always the possibility that trouble may occur with them Trouble with semiconductors may lead to personal injury fire or property damage Remember to give due consideration to safety when making your circuit designs with appropriate measures such as i placement of substitutive auxiliary circuits ii use of nonflammable material or iii prevention against any malfunction or mishap Notes regarding these materials 1 These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp product best suited to the customer s application they do not convey any license under any intellectual property rights or any other rights belonging to Renesas Technology Corp or a third party 22. 0 0458 51 0 0 596 179 5 3200 0 828 137 9 2 87 44 27 0 0481 50 3 0 596 178 8 3400 0 824 134 8 2 68 41 22 0 0509 49 1 0 596 178 0 3600 0 826 132 4 2 53 38 75 0 0539 48 0 0 597 177 0 3800 0 827 129 6 2 39 35 90 0 0562 46 1 0 597 175 8 4000 0 826 126 2 2 25 32 65 0 0587 44 6 0 597 174 5 4200 0 830 123 6 2 13 29 93 0 0608 43 6 0 596 173 0 4400 0 830 120 8 2 03 27 16 0 0632 41 6 0 596 171 3 4600 0 832 117 3 1 92 23 82 0 0656 40 2 0 597 169 4 4800 0 839 114 6 1 82 20 87 0 0675 38 3 0 599 167 4 5000 0 841 111 9 1 74 18 04 0 0699 36 1 0 601 165 3 5200 0 843 108 6 1 65 14 81 0 0719 34 1 0 606 163 1 5400 0 851 106 1 1 56 11 85 0 0734 32 2 0 612 160 9 5600 0 854 103 6 1 49 8 83 0 0750 29 8 0 618 158 5 5800 0 856 100 5 1 41 5 79 0 0763 27 5 0 624 156 3 6000 0 862 98 4 1 34 2 79 0 0776 25 4 0 631 153 9 Rev 4 00 Jun 21 2006 page 9 of 12 ztENESAS HSG2005 S parameter Vcg 3 3 V Ic 100 mA Zo 50 Q t MHz S11 S21 S12 S22 MAG ANG deg MAG TANG deg MAG ANG deg MAG ANG deg 100 0 675 140 9 80 79 120 97 0 0127 40 9 0 626 109 1 200 0 771 160 6 48 16 104 58 0 0091 37 0 0 594 134 0 300 0 785 168 9 33 50 96 32 0 0110 34 4 0 561 147 6 400 0 790 174 3 25 29 91 50 0 0128 37 4 0 554 155 1 500 0 794 178 0 20 21 88 06 0 0135 41 0 0 553 159 7 600 0 800 179 2 16 83 85 2
3. 41 35 71 0 0558 46 9 0 592 176 3 4000 0 826 126 3 2 28 32 44 0 0588 45 3 0 593 175 0 4200 0 830 123 7 2 16 29 71 0 0609 43 6 0 592 173 4 4400 0 829 120 8 2 05 26 93 0 0629 41 7 0 592 171 8 4600 0 831 117 3 1 94 23 60 0 0648 40 0 0 593 169 8 4800 0 838 114 7 1 84 20 64 0 0674 38 3 0 595 167 8 5000 0 841 112 0 1 76 17 79 0 0696 36 7 0 598 165 8 5200 0 842 108 7 1 66 14 56 0 0719 34 5 0 603 163 5 5400 0 850 106 1 1 58 11 59 0 0731 32 2 0 608 161 3 5600 0 855 103 6 1 51 8 56 0 0746 29 9 0 615 159 0 5800 0 856 100 5 1 43 5 51 0 0762 27 7 0 621 156 7 6000 0 862 98 4 1 35 2 51 0 0770 25 6 0 629 154 3 Rev 4 00 Jun 21 2006 page 10 of 12 ztENESAS HSG2005 S parameter Vcg 3 6 V Ic 100 mA Zo 50 Q t MHz S11 S21 S12 S22 MAG ANG deg MAG TANG deg MAG ANG deg MAG ANG deg 100 0 669 141 0 82 98 121 53 0 0107 60 0 0 695 107 8 200 0 763 160 3 48 82 105 15 0 0118 37 6 0 583 133 1 300 0 781 168 8 33 85 96 65 0 0104 31 8 0 556 146 8 400 0 787 174 2 25 53 91 73 0 0110 37 4 0 550 154 7 500 0 793 177 9 20 40 88 22 0 0131 38 2 0 548 159 3 600 0 799 179 3 16 98 85 36 0 0145 43 2 0 548 162 5 700 0 800 176 8 14 52 82 79 0 0157 44 8 0 549 165 0 800 0 801 174 4 12 67 80 50 0 0165 46 4 0 550 166 9 900 0 800 172 1 11 21 78 40 0 0172 47 4 0 552 168 4 1000 0 801 1
4. 598 134 6 300 0 786 169 2 32 99 96 02 0 0107 33 1 0 566 148 2 400 0 792 174 5 24 95 91 32 0 0127 39 8 0 559 155 7 500 0 797 178 1 19 96 87 93 0 0129 39 0 0 559 160 4 600 0 802 179 0 16 62 85 12 0 0139 41 5 0 560 163 5 700 0 803 176 6 14 22 82 63 0 0155 42 8 0 560 165 9 800 0 804 174 2 12 41 80 38 0 0163 48 0 0 561 167 7 900 0 802 171 9 10 98 78 31 0 0176 49 1 0 563 169 1 1000 0 804 169 8 9 81 76 55 0 0191 50 1 0 565 170 4 1100 0 807 168 1 8 89 74 86 0 0201 51 0 0 567 171 4 1200 0 809 166 5 8 11 73 18 0 0214 51 7 0 568 172 3 1300 0 809 164 8 7 47 71 47 0 0230 52 7 0 570 173 0 1400 0 809 163 1 6 91 69 76 0 0244 53 8 0 572 173 8 1500 0 809 161 2 6 43 68 18 0 0257 53 0 0 573 174 5 1600 0 811 159 5 6 00 66 70 0 0275 54 4 0 576 175 1 1700 0 814 158 1 5 62 65 37 0 0280 54 6 0 578 175 6 1800 0 817 156 9 5 29 63 93 0 0295 54 2 0 579 176 0 1900 0 817 155 6 5 00 62 42 0 0314 54 2 0 581 176 4 2000 0 816 154 0 4 74 60 74 0 0324 54 5 0 583 176 9 2100 0 814 152 3 4 49 59 29 0 0335 54 4 0 584 177 3 2200 0 817 150 8 4 28 57 89 0 0350 53 9 0 586 177 7 2300 0 820 149 5 4 08 56 76 0 0364 53 1 0 587 178 0 2400 0 824 148 4 3 90 55 44 0 0381 53 8 0 590 178 4 2500 0 825 147 3 3 73 54 01 0 0389 53 4 0 591 178 7 2600 0 823 145 8 3 58 52 41 0 0405 52 5 0 591 179 0 2700 0 822 144 3 3 44 50 91 0 0416 52 6 0 593 179 4 2800 0 822 142 8 3 30 49 54 0 0432 52 5 0 594 179 8 2900 0 824 141 5 3 18 48 34 0 0440 51 5 0 595 179 9 3000 0 827 140 4 3 07 47 15
5. 830 117 4 1 95 23 41 0 0653 40 4 0 590 170 2 4800 0 838 114 7 1 85 20 45 0 0671 38 2 0 592 168 2 5000 0 840 112 0 1 77 17 60 0 0694 36 3 0 595 166 1 5200 0 842 108 7 1 68 14 35 0 0712 34 3 0 599 163 9 5400 0 850 106 1 1 59 11 39 0 0730 32 3 0 606 161 6 5600 0 854 103 6 1 52 8 34 0 0749 29 6 0 612 159 3 5800 0 856 100 5 1 44 5 27 0 0761 28 1 0 619 157 0 6000 0 861 98 4 1 36 2 29 0 0768 25 7 0 626 154 7 Rev 4 00 Jun 21 2006 page 11 of 12 ztENESAS HSG2005 Package Dimensions Package Name JEITA Package Code RENESAS Code Previous Code MASS Typ HWOFN 8 P HWQFN8 2x2 0 65 PWONOOOSZA A TNP 8TV 0 009g B 4 D ep A gt PIJE MTS TAT B a T 6 5 5 6 7 s wy 8 4 4 C0 15 8 8 Pee ted ERES 8 L 1 2 3 3 2 j1 Zo s Dimension in Millimeters 4 Reference Symbol Min Nom Max lt P D 1 965 2 00 2 075 E 1 965 2 00 2 075 A 0 80 Ai 0 0 05 lt A2 EE Es b 03 e 065 L E lp 035 al s lt x 0 10 y 008 y 0 10 Z
6. Gain MSG 10 5 12 5 dB 1 58 GHz c i Vcg 3 V lc 100 mA Maximum Available Gain MAG 17 0 dB f 2 4 GHz i Vcg 3 V lc 100 mA Maximum Available Gain MAG 9 0 dB 1 58 GHz Power Gain PG 8 0 dB Voe 3 6 V lide 100 mA f 5 8 GHz Pin 13 dBm VCE 3 6 V lidie 100 mA f 5 8 GHz 1dB Compression Point at output PidB 424 E dBm VCE 3 6 V lidie 100 mA f 5 8 GHz Pin 13 dBm Saturation Output Power Po sat 23 dBm Main Characteristics Collector Power Dissipation Curve 1800 4 x 4 x 1mm on PCB Collector Power Dissipation Pc mW 1200 600 0 50 100 150 200 Ambient Temperature Ta C Rev 4 00 Jun 21 2006 page 2 of 12 RENESAS HSG2005 EE 100 T E 80 2 60 c 2 5 G 40 o o D 20 o T 2 10 2 Oo 0 8 o o c S o 06 Q v 04 D o c G 0 2 o 2 S g 00 nc Typical Transfer Characteristics 0 2 0 4 0 6 0 8 1 0 Base to Emitter Voltage Vge V Reverse Transfer Capacitanse vs Collector to Base Voltage lp gt 0 f 1 MHz 0 1 2 3 4 5 Collector to Base Voltage Ven V Maximum Stable Gain Maximum Available Gain 30 25 20 Maximum Stable Gain MSG dB Maximum Available Gain MAG dB vs Collector Curre
7. 2 0 0140 42 0 0 553 163 0 700 0 802 176 7 14 40 82 70 0 0157 44 5 0 554 165 4 800 0 802 174 3 12 56 80 43 0 0169 47 1 0 555 167 2 900 0 801 172 0 11 11 78 33 0 0177 49 5 0 557 168 8 1000 0 802 170 0 9 93 76 55 0 0191 52 1 0 559 170 0 1100 0 805 168 2 8 99 74 86 0 0204 50 3 0 561 171 0 1200 0 808 166 6 8 20 73 16 0 0211 51 6 0 563 171 9 1300 0 808 164 9 7 56 71 44 0 0228 52 5 0 564 172 7 1400 0 808 163 1 6 99 69 73 0 0247 53 4 0 566 173 4 1500 0 807 161 3 6 51 68 13 0 0252 53 4 0 567 174 0 1600 0 809 159 6 6 07 66 63 0 0268 53 9 0 570 174 7 1700 0 813 158 3 5 68 65 30 0 0281 53 8 0 572 175 2 1800 0 816 157 0 5 35 63 86 0 0294 54 0 0 574 175 7 1900 0 816 155 7 5 05 62 34 0 0309 53 8 0 575 176 1 2000 0 814 154 1 4 79 60 66 0 0323 54 4 0 578 176 5 2100 0 813 152 4 4 55 59 20 0 0335 54 6 0 579 176 9 2200 0 816 150 9 4 33 57 79 0 0348 54 0 0 581 177 3 2300 0 819 149 6 4 12 56 67 0 0362 53 4 0 582 177 7 2400 0 823 148 5 3 94 55 32 0 0378 53 2 0 584 178 0 2500 0 824 147 3 3 77 53 88 0 0391 52 9 0 586 178 3 2600 0 822 145 9 3 62 52 28 0 0409 53 1 0 586 178 6 2700 0 820 144 3 3 47 50 76 0 0422 52 6 0 588 179 0 2800 0 821 142 9 3 34 49 39 0 0423 52 1 0 589 179 4 2900 0 823 141 6 3 22 48 20 0 0444 51 8 0 590 179 7 3000 0 826 140 5 3 11 47 01 0 0457 51 4 0 591 180 0 3200 0 827 137 9 2 90 44 10 0 0480 50 6 0 592 179 3 3400 0 823 134 9 2 71 41 04 0 0512 49 0 0 592 178 4 3600 0 826 132 4 2 55 38 57 0 0533 47 8 0 593 177 4 3800 0 826 129 6 2
8. 70 0 10 02 76 59 0 0190 49 6 0 553 169 7 1100 0 804 168 3 9 07 74 88 0 0203 48 8 0 556 170 7 1200 0 807 166 7 8 27 73 18 0 0216 52 1 0 558 171 6 1300 0 807 165 0 7 62 71 44 0 0228 53 0 0 560 172 3 1400 0 806 163 2 7 06 69 72 0 0242 53 8 0 561 173 1 1500 0 806 161 3 6 56 68 12 0 0255 53 7 0 563 173 7 1600 0 809 159 7 6 12 66 61 0 0268 54 4 0 565 174 3 1700 0 812 158 3 5 73 65 26 0 0282 54 9 0 567 174 9 1800 0 814 157 1 5 39 63 81 0 0297 54 0 0 569 175 3 1900 0 815 155 7 5 10 62 28 0 0311 54 1 0 571 175 7 2000 0 813 154 1 4 83 60 60 0 0324 54 4 0 573 176 1 2100 0 812 152 5 4 58 59 13 0 0335 54 2 0 575 176 6 2200 0 814 150 9 4 36 57 72 0 0348 54 2 0 577 177 0 2300 0 818 149 7 4 16 56 58 0 0365 53 4 0 578 177 3 2400 0 822 148 5 3 98 55 23 0 0381 53 5 0 580 177 6 2500 0 822 147 3 3 81 53 78 0 0389 53 4 0 581 178 0 2600 0 821 145 9 3 65 52 18 0 0402 53 0 0 583 178 3 2700 0 820 144 4 3 50 50 66 0 0416 53 2 0 584 178 7 2800 0 819 142 9 3 37 49 28 0 0429 51 7 0 585 179 0 2900 0 822 141 6 3 24 48 08 0 0443 51 9 0 586 179 3 3000 0 825 140 5 3 13 46 89 0 0453 51 2 0 587 179 7 3200 0 826 137 9 2 92 43 98 0 0482 50 0 0 588 179 6 3400 0 823 134 9 2 73 40 91 0 0505 49 5 0 589 178 7 3600 0 825 132 5 2 57 38 42 0 0533 48 0 0 589 177 8 3800 0 825 129 7 2 43 35 54 0 0559 46 2 0 589 176 6 4000 0 825 126 3 2 29 32 27 0 0582 45 6 0 589 175 3 4200 0 829 123 7 2 17 29 53 0 0603 43 9 0 589 173 8 4400 0 828 120 9 2 06 26 75 0 0627 41 8 0 589 172 1 4600 0
9. Renesas Technology Corp assumes no responsibility for any damage liability or other loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake Please contact Renesas Technology Corp or an authorized Renesas Technology Corp product distributor when considering the use of a product contained herein for any specific purposes such as apparatus or systems for transportation vehicular medical aerospace nuclear or undersea repeater use 6 The prior written approval of Renesas Technology Corp is necessary to reprint or reproduce in whole or in part these materials 7 If these products or technologies are subject to the Japanese export control restrictions they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination Any diversion or reexport contrary to the export control laws and regulations of Japan and or the country of destination is prohibited 8 Please contact Renesas Technology Corp for further details on these materials or the products contained therein TENESAS RENESAS SALES OFFICES http www renesas com Refer to http www renesas com en network for the latest and detailed information Renesas Technology America Inc 450 Holger Way San Jose CA 95134 1368 U S A T
10. Renesas Technology Corp assumes no responsibility for any damage or infringement of any third party s rights originating in the use of any product data diagrams charts programs algorithms or circuit application examples contained in these materials 3 All information contained in these materials including product data diagrams charts programs and algorithms represents information on products at the time of publication of these materials and are subject to change by Renesas Technology Corp without notice due to product improvements or other reasons Itis therefore recommended that customers contact Renesas Technology Corp or an authorized Renesas Technology Corp product distributor for the latest product information before purchasing a product listed herein The information described here may contain technical inaccuracies or typographical errors Renesas Technology Corp assumes no responsibility for any damage liability or other loss rising from these inaccuracies or errors Please also pay attention to information published by Renesas Technology Corp by various means including the Renesas Technology Corp Semiconductor home page http www renesas com 4 When using any or all of the information contained in these materials including product data diagrams charts programs and algorithms please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products
11. aracteristics 30 400 Vee 3 6 V 25 F lige 50 mA Pout 350 E f 2 4 GHz 9 9 20 300 59 PG KE Q 15 250 z B E 10 200 amp z0 2 o0 Oo ad 5 5 150 EE 2 amp 0 100 2 5 50 10 0 20 10 0 10 20 Input Power Pin dBm S parameter vs Frequency ea Z oO E S a 0 1 5 20 25 30 Frequency f GHz 3 5 4 0 Pout IMD3 dBm S parameter dB RS t t j F F F T VCC 10 pF 1000 pF 1 uF L 10nH C 1pF LUO 1 34 O OUT L 1 8 nH F C 0 9 pF 3rd Order Intermodulation Distortion IMD3 40 30 20 40 Input Power Pin dBm S parameter vs Frequency 3 0 35 4 0 Frequency f GHz Rev 4 00 Jun 21 2006 page 4 of 12 ztENESAS HSG2005 5 8 GHz Characteristics Evaluation Board Circuit VBB Bias Control Pin Pout Characteristics Output Power Pout dBm Power Gain PG dB S parameter dB Ed t zr zr Tr uF 1000 pE 10pF IN O dr 0 5 pF VCC Pin Pout Characteristics Vcc 3 6V lide 100 mA f 5 8 GHz 250 200 150 100 5 10 15 Input Power Pin dBm S parameter vs Frequency Vce 3 6V Ic 100 mA Frequency f GHz lop MA Pout IMD3 dBm S parameter dB
12. arameter vs Frequency S42 Parameter vs Frequency Scale 0 04 div 60 Condition Vcg 3 3 V Ic 100 mA Zo 50 Q Condition Vce 3 3 V lc 100 mA Zo 50 Q 100 to 3000 MHz 100 MHz Step 100 to 3000 MHz 100 MHz Step 3200 to 6000 MHz 200 MHz Step 3200 to 6000 MHz 200 MHz Step Rev 4 00 Jun 21 2006 page 7 of 12 RENESAS HSG2005 S44 Parameter vs Frequency S21 Parameter vs Frequency 90 Scale 20 div 60 90 Condition Vcg 3 6 V Ic 100 mA Zo 50Q Condition Vcg 3 6 V lc 100 mA Zo 50 Q 100 to 3000 MHz 100 MHz Step 100 to 3000 MHz 100 MHz Step 3200 to 6000 MHz 200 MHz Step 3200 to 6000 MHz 200 MHz Step S22 Parameter vs Frequency S42 Parameter vs Frequency Scale 0 04 div 60 Condition Vcg 3 6 V Ic 100 mA Zo 50Q Condition Vcg 3 6 V lc 100 mA Zo 50 Q 100 to 3000 MHz 100 MHz Step 100 to 3000 MHz 100 MHz Step 3200 to 6000 MHz 200 MHz Step 3200 to 6000 MHz 200 MHz Step Rev 4 00 Jun 21 2006 page 8 of 12 ztENESAS HSG2005 S parameter Vcg 23 V Ie 100 mA Zo 50 Q t MHz S11 S21 S12 S22 MAG ANG deg MAG TANG deg MAG ANG deg MAG ANG deg 100 0 687 139 8 77 58 120 52 0 0084 45 8 0 682 105 5 200 0 775 160 8 47 14 104 05 0 0106 28 1 0
13. el lt 1 gt 408 382 7500 Fax lt 1 gt 408 382 7501 Renesas Technology Europe Limited Dukes Meadow Millboard Road Bourne End Buckinghamshire SL8 5FH U K Tel lt 44 gt 1628 585 100 Fax lt 44 gt 1628 585 900 Renesas Technology Shanghai Co Ltd Unit 204 205 AZIACenter No 1233 Lujiazui Ring Rd Pudong District Shanghai China 200120 Tel lt 86 gt 21 5877 1818 Fax lt 86 gt 21 6887 7898 Renesas Technology Hong Kong Ltd 7th Floor North Tower World Finance Centre Harbour City 1 Canton Road Tsimshatsui Kowloon Hong Kong Tel lt 852 gt 2265 6688 Fax lt 852 gt 2730 6071 Renesas Technology Taiwan Co Ltd 10th Floor No 99 Fushing North Road Taipei Taiwan Tel lt 886 gt 2 2715 2888 Fax lt 886 gt 2 2713 2999 Renesas Technology Singapore Pte Ltd 1 Harbour Front Avenue 06 10 Keppel Bay Tower Singapore 098632 Tel lt 65 gt 6213 0200 Fax lt 65 gt 6278 8001 Renesas Technology Korea Co Ltd Kukje Center Bldg 18th FI 191 2 ka Hangang ro Yongsan ku Seoul 140 702 Korea Tel 82 2 796 3115 Fax 82 2 796 2145 Renesas Technology Malaysia Sdn Bhd Unit 906 Block B Menara Amcorp Amcorp Trade Centre No 18 Jalan Persiaran Barat 46050 Petaling Jaya Selangor Darul Ehsan Malaysia Tel lt 603 gt 7955 9390 Fax 603 7955 9510 2006 Renesas Technology Corp All rights reserved Printed in Japan Colophon 6 0
14. nt Voce 3V MAG HT f 1GH mse Jr 7 p r Ht 1 8 GHz LIL yu 2 4 GHz Li d 2 5 2 GHz 5 8 GHz 1 10 100 1000 Collector Current c mA S24 Parameter S24 dB Maximum Stable Gain MSG dB Maximum Available Gain MAG dB DC Current Transfer Ratio vs Collector Current T 300 uu Voce 3V Ren 2 c 200 D o c g He x 100 o 3 Oo O Qa 0 1 10 100 1000 Collector Current Ic mA Transition Frequency vs Collector Current 40 N GE gt 3V 6 f 1 GHz 30 gt o c S 2 20 2 LL o x 10 o c g H 0 1 10 100 1000 Collector Current Ic mA S24 Parameter Maximum Stable Gain Maximum Available Gain vs Frequency 40 30 MAG 20 10 Vce gt 2 V lo 100 mA 0 1 1 10 Frequency f GHz 2006 page 3 of 12 Rev 4 00 Jun 21 ztENESAS HSG2005 2 4 GHz Characteristics Evaluation Board Circuit na Be T VBB Bias Control 3r Jr Tr Yl uF 1000pF 10 pF 272 L 5 6 nH C 1pF IN O AU T L 1 5nH C 1to2 pF Pin Pout Characteristics Pin Pout Ch
15. sTENESAS HSG2005 SiGe HBT High Frequency Medium Power Amplifier REJ03G0485 0400 Rev 4 00 Jun 21 2006 Features e High Transition Frequency fr 28 5 GHz typ e Low Distortion and Excellent Linearity P1dB at output 21 dBm typ f 5 8 GHz e High Collector to Emitter Voltage Vcgo 5 V Ideal for 2 GHz 5 GHz Band applications e g WLAN Digital cordless phone Outline Renesas Package code PWONOOOSZA A Package name HWQFN 8 lt TNP 8TV gt 1 Collector 2 Collector 3 Collector 4 Emitter 5 Emitter 6 Base 7 Emitter 8 Emitter 9 Emitter Note Marking is 2005 Absolute Maximum Ratings Ta 25 C Item Symbol Ratings Unit Collector to base voltage VcBo 12 V Collector to emitter voltage VcEo 5 V Emitter to base voltage VEBO 1 2 V Collector current lc 400 mA Collector power dissipation Pc je W Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Note Value on PCB 40 x 40 x 1 0 mm Rev 4 00 Jun 21 2006 page 1 of 12 ztENESAS HSG2005 Electrical Characteristics Ta 25 C Item Symbol Min Typ Max Unit Test Conditions DC current transfer ratio NEE 150 220 300 Vcg 3 V lo 100 mA i Vcg 3 V le 0 f 1 MHz Reverse Transfer Capacitance Cre 0 4 pF emitter grounded 2 Vcg 3 V lc 100 mA Transition Frequency fr 28 5 GHz f 1GHz Vcg 3 V lc 100 mA Maximum Stable
16. zr zr zr 10pF 1000pF 1 pF L 2pF P 0 5 pF kd OUT zr 0 4 pF 3rd Order Intermodulation Distortion IMD3 40 30 20 10 0 Fundamental 1tone IMD3 2tone Af 1MHz 20 0 20 40 Input Power Pin dBm S parameter vs Frequency Frequency f GHz Rev 4 00 Jun 21 2006 page 5 of 12 ztENESAS HSG2005 S24 Parameter vs Frequency 44 Parameter vs Frequency 90 Scale 20 div 60 90 Condition Vcg 3 V lc 100 mA Zo 50 Q 100 to 3000 MHz 100 MHz Step 3200 to 6000 MHz 200 MHz Step Condition Vcg 3 V lc 100 mA Zo 500 100 to 3000 MHz 100 MHz Step 3200 to 6000 MHz 200 MHz Step S42 Parameter vs Frequency S22 Parameter vs Frequency Scale 0 04 div 60 ie Yee Condition Vcg 3 V lc 100 mA Zo 50 Q 100 to 3000 MHz 100 MHz Step 3200 to 6000 MHz 200 MHz Step Condition Vcg 3 V lc 100 mA Zo 500 100 to 3000 MHz 100 MHz Step 3200 to 6000 MHz 200 MHz Step Rev 4 00 Jun 21 2006 page 6 of 12 ztENESAS HSG2005 S44 Parameter vs Frequency S21 Parameter vs Frequency 90 Scale 20 div 60 90 Condition Vcg 3 3 V le 100 mA Zo 50Q Condition Vcg 3 3 V lc 100 mA Zo 50 Q 100 to 3000 MHz 100 MHz Step 100 to 3000 MHz 100 MHz Step 3200 to 6000 MHz 200 MHz Step 3200 to 6000 MHz 200 MHz Step S22 P
Download Pdf Manuals
Related Search