Renesas 2SK3069 User's Manual
Contents
1. 50 0 50 100 150 200 Case Temperature Tc C Body to Drain Diode Reverse Recovery Time A di dt 50A us Ves 0 Ta 25 C 0 3 1 3 10 30 100 Reverse Drain Current Jop A Dynamic Input Characteristics Gate Charge Qg nc Gate to Source Voltage Ves V Forward Transfer Admittance vs Drain Current 500 Vos 10V 200 Pulse Test 100 50 Tc 25 C 20 10 Forward Transfer Admittance ur S 2 oun gt N 1 0 3 1 3 10 30 100 Drain Current Ip A Typical Capacitance vs Drain to Source Voltage 30000 Ves 0 f 1 MHz _ 10000 Ciss LL 2 O 3000 CO C 2 S 1000 Coss Qa aal O 300 Crss 100 0 10 20 30 40 50 Drain to Source Voltage Vps V Switching Characteristics 1000 td off 500 T t 200 f o E tr 100 j 2 td on 5 50 3 Re 20 Ves 10 V Vpp 30V PW 5 us duty lt 1 10 0 102 051 2 510 20 50100 Drain Current Ip A Rev 11 00 Sep 07 2005 page 4 of 7 ztENESAS 2SK3069 Reverse Drain Current vs Source to Drain2. Voltage z 100 10V 5 80 _ 5V 5 60 O E ker Ves 0 5 V D A0 a o 2 g 20 E Pulse Test 0 0 4 0 8 1 2 1 6 2 0 Source to Drain Voltage Vsp V Maximum Avalanche Energy vs Channel Temperature Derating gt E 250 w lap 50A ur 200 Vpp 25V duty lt 0 1 D Rg gt 502 2 150 Lu oO 5 S 100 amp Oo E e 50 2 a 0 25 50 75 100 125 150 Channel Temperature Tch C Normalized Transient Thermal Impedance vs Pulse Width 2 3 EA E Tc 25 C oO S 1 s D 1 oO Laf 0 5 S 0 3 e 2 0 5 0 1 64 8ch c t Ys t e ch c 2 i Doch c 1 25 C W Tc 25 C S 0 05 T e PDM pei SZ 0 03 ea yer T x oi Af PW d A T a O Z 0 01 10 100 u 1m 10m 100 m 1 10 Avalanche Test Circuit L Vps Monitor EL olap Monitor Rg D U T NVV H KA z 509 Pulse Width PW S Ear Avalanche Waveform Voss 1 eLel p2e 2 AP Voss Von m Vueppes Rev 11 00 Sep 07 2005 page 5 of 7 ztENESAS 2SK3069 Switching Time Test Circuit Vin Monitor Vout Moni
3. property damage Remember to give due consideration to safety when making your circuit designs with appropriate measures such as i placement of substitutive auxiliary circuits ii use of nonflammable material or iii prevention against any malfunction or mishap Notes regarding these materials 1 These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp product best suited to the customer s application they do not convey any license under any intellectual property rights or any other rights belonging to Renesas Technology Corp or a third party 2 Renesas Technology Corp assumes no responsibility for any damage or infringement of any third party s rights originating in the use of any product data diagrams charts programs algorithms or circuit application examples contained in these materials 3 All information contained in these materials including product data diagrams charts programs and algorithms represents information on products at the time of publication of these materials and are subject to change by Renesas Technology Corp without notice due to product improvements or other reasons It is therefore recommended that customers contact Renesas Technology Corp or an authorized Renesas Technology Corp product distributor for the latest product information before purchasing a product listed herein The information described here may contain technical inaccuracies or ty
4. 1 0 2 5 V lib 1 mA Vos 10 V 4 Static drain to source on state Boston 6 0 7 5 mQ lp 40 A Vas 10 V4 resistance 8 0 12 mQ We 40 A Ves 4 V 4 Forward transfer admittance lyis 50 80 S llb 40 A Vps 10V TE Input capacitance Ciss 7100 pF Vos 10 V Ves 0 Output capacitance Coss 1000 pF f 1 MHz Reverse transfer capacitance Crss 280 pF Total gate charge Qg 125 nC Vpp 25 V Ves 10 V Gate to source charge Qgs 25 nC lpb 75A Gate to drain charge Qgd 25 nC Turn on delay time ta on 60 ns Ves 10 V Ib 40 A Rise time tr 300 ns RL 0 75Q Turn off delay time ta ott 520 ns Fall time t 330 ns Body rain diode forward voltage Vor 1 05 V lr 75A Ves 0 Body drain diode reverse recovery trr 90 ns lk 75A Ves 0 time di dt 50 A us Note 4 Pulse test Rev 11 00 Sep 07 2005 page 2 of 7 ztENESAS 2SK3069 Main Characteristics 200 150 100 Channel Dissipation Pch W oa CH 100 E Q CH CH CH Drain Current Ip A N CH 2 0 o 1 6 VDs on 1 2 0 8 0 4 Drain to Source Saturation Volta Power vs Temperature Derating 50 100 150 200 Case Temperature Tc C Typical Output Characteristics Ves 10 V Pulse Test 4V 3 5 V
5. 2CENESAS 2SK3069 Silicon N Channel MOS FET High Speed Power Switching REJ03G1062 1100 Previous ADE 208 6941 Rev 11 00 Sep 07 2005 Features e Low on resistance Rpsvon 6 mQ typ e Low drive current e 4V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSSO004AC A Package name TO 220AB D OC b 1 Gate H 2 Drain G Fa a Flange H 3 Source O S Rev 11 00 Sep 07 2005 page 1 of 7 ztENESAS 2SK3069 Absolute Maximum Ratings Ta 25 C Item Symbol Ratings Unit Drain to source voltage Voss 60 V Gate to source voltage Vass 20 V Drain current Ip 75 A Drain peak current Igueag ZE 300 A Body drain diode reverse drain current IDR 75 A Avalanche current be SE 50 A Avalanche energy Ear Notes 214 mJ Channel dissipation Pch Note 100 W Channel temperature Tch 150 C Storage temperature Tstg 55 to 150 C Notes 1 PW lt 10us duty cycle lt 1 2 Value at Tc 25 C 3 Value at Tch 25 C Rg gt 50 Q Electrical Characteristics Ta 25 C Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V BR DSs 60 V Ib 10 mA Ves 0 Gate to source leak current lass 0 1 uA Ves 20 V Vos 0 Zero gate voltage drain current loss 10 uA Vps 60 V Ves 0 Gate to source cutoff voltage Vasen
6. 3V 2 5 V 2 4 6 8 10 Drain to Source Voltage Vps V Drain to Source Saturation Voltage vs Gate to Source Voltage Pulse Test Ip 50A 20 A 10A 4 8 12 16 20 Gate to Source Voltage Ves V Drain Current Ip A Drain Current Ip A Ros on MQ Static Drain to Source on State Resistance 1000 300 100 30 10 Maximum Safe Operation Area Operation in 3 this area is 1 0 3 0 1 limited by Rps on Ta 25 C 0 1 0 3 1 100 80 60 40 20 3 70 70 NKS ON NA D N LO e a K Hoi So e 10 30 100 Drain to Source Voltage Vps V Typical Transfer Characteristics Vos 10V Pulse Test Gate to Source Voltage Ves V Static Drain to Source on State Resistance vs Drain Current 100 Pulse Test 50 20 10 Ves 4V 5 OV 2 1 1 2 5 10 20 50 100 200 Drain Current Ip A Rev 11 00 Sep 07 2005 page 3 of 7 ztENESAS 2SK3069 Rps on mQ Static Drain to Source on State Resistance 1000 500 200 100 50 20 Reverse Recovery Time trr ns 100 80 60 40 Drain to Source Voltage Vps V Static Drain to Source on State Resistance vs Temperature Pulse Test
7. er Singapore 098632 Tel lt 65 gt 6213 0200 Fax lt 65 gt 6278 8001 Renesas Technology Korea Co Ltd Kukje Center Bldg 18th FI 191 2 ka Hangang ro Yongsan ku Seoul 140 702 Korea Tel lt 82 gt 2 796 3115 Fax lt 82 gt 2 796 2145 Renesas Technology Malaysia Sdn Bhd Unit 906 Block B Menara Amcorp Amcorp Trade Centre No 18 Jalan Persiaran Barat 46050 Petaling Jaya Selangor Darul Ehsan Malaysia Tel lt 603 gt 7955 9390 Fax lt 603 gt 7955 9510 2005 Renesas Technology Corp All rights reserved Printed in Japan Colophon 3 0
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9. pographical errors Renesas Technology Corp assumes no responsibility for any damage liability or other loss rising from these inaccuracies or errors Please also pay attention to information published by Renesas Technology Corp by various means including the Renesas Technology Corp Semiconductor home page http www renesas com 4 When using any or all of the information contained in these materials including product data diagrams charts programs and algorithms please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products Renesas Technology Corp assumes no responsibility for any damage liability or other loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake Please contact Renesas Technology Corp or an authorized Renesas Technology Corp product distributor when considering the use of a product contained herein for any specific purposes such as apparatus or systems for transportation vehicular medical aerospace nuclear or undersea repeater use 6 The prior written approval of Renesas Technology Corp is necessary to reprint or reproduce in whole or in part these materials 7 If these products or technologies are subject to the Japanese export control restrictions they
10. tor i N We S50 Q Vv Switching Time Waveforms Vout td on RN tf tr ta off Rev 11 00 Sep 07 2005 page 6 of 7 ztENESAS 2SK3069 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS Typ SC 46 PRSSO004AC A TO 220AB TO 220ABV 1 89 Unit mm 11 5 Max ph 10 16 0 2 4 44 40 2 9 5 R R 30 d 3 6 O08 W 1 26 0 15 ee ae N els H 9 5 q E H KL 7 S 2 7 Max __1 5 Max lo E 5 H D H o S i 0 76 01 Kal N T H d 254405 2 54405 h 0 50 1 mim CO Ordering Information Part Name Quantity Shipping Container 2SK3069 E 500 pcs Box Sack Note For some grades production may be terminated Please contact the Renesas sales office to check the state of production before ordering the product Rev 11 00 Sep 07 2005 page 7 of 7 ztENESAS Renesas Technology Corp Sales Strategic Planning Div Nippon Bldg 2 6 2 Ohte machi Chiyoda ku Tokyo 100 0004 Japan Keep safety first in your circuit designs 1 Renesas Technology Corp puts the maximum effort into making semiconductor products better and more reliable but there is always the possibility that trouble may occur with them Trouble with semiconductors may lead to personal injury fire or
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