Philips SA5223 User's Manual
Contents
1. i i 85 C RL INFINITY x 25 C Vcc 5 0V 100 Temperature 40 25 85 C 0 250 RT Vop lin E RL INFINITY E 0 200 Voc 5 0V Temperature 25 C 8 Vop Vour Vour Vos 10 8 0 150 d S x E 0 100 7 4 0 050 0 000 V ais gt E d 1 i DC INPUT Bes uA LOG ix Bi I DC INPUT CURRENT uA eee mE Figure 10 SA5223 Differential Output vs DC lin Figure 13 SA5223 Differential RT vs DC lin for small input current for large input current 160 T T 7 RL INFINITY 1 800 140 Vcc 5 0V Temperature 25 C RT Vop I 1 600 120 OD lin 1 400 RL INFINITY Voc 5 5V Voc 5 0V Temperature 25 C 100 y E 1 200 vop Vout Vout Vos g E Voc 5 0V 1 000 7 E Voc 4 5V a 30 800 60 gt 0 600 A 40 0 400 er 20 0260 ng T ee 0 0 000 0 2 3 4 5 6 7 8 9 10 1 10 100 1000 10000 DC INPUT CURRENT uA SD00537 DC INPUT CURRENT uA LOG SD00534 Figure 14 SA5223 Differential RT vs DC liy Figure 11 SA5223 Differential Output vs DC liy for small input current 160 i i 1000 85 C RL INFINITY 140 Voc 5 0V RL INFINITY o d r4 Temperature 40 25 85 C 100 a Voc 4 5 5 0 5 0V 120 RT Vop lin Temperature 25 C E 25 C RT Vop lin 100 440 C 8 Z 25 C 10 x d Z 80 x E E 60 m 1 40 Ly 40 C 20 0 10 100 1000 10000 0 DC INPUT CURRENT uA LOG 0 2 3 4 5 6 7 8 9 10 SD00538 DC INPUT CURRENT uA SD00535 Figure 15 SA5223 D2. cl 69 89 cr SISS Piri rie O E OS E O a G a A a A l I au 0 Se 84 ZY 94 TOP VIEW BOTTOM VIEW SD00522 Figure 3 SA5223 Board Layout NOT ACTUAL SIZE 1995 Oct 24 7 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier 150MHz SA5223 28 00 100 Vos lin 0 Vout Vout 26 00 901 RL INFINITY Voc 5 5V LA Vcc 5 0V Voc 5 5V CC 24 00 80 gt E Sese Voc 5 0V t 2 z cc 5 E T 2200 o a 70 er us a 6 La co 4 3 5 a gt q 20 00 Voc 4 5V 60 T QE E om 2 50 u 18 00 40 16 00 50 25 0 25 50 75 100 50 25 0 25 50 75 100 TEMPERATURE C TEMPERATURE C SD00527 SD00530 Figure 4 SA5223 Icc vs Temperature Figure 7 SA5223 Output Vos vs Temperature 3 500 1 900 1 800 p LIII VouT lt 1 700 3 300 E Voc 5 5V S Fa 5 Vcc 5 0V RL
3. INFINITY i 1 600 Voc 4 5V Ex 3 200 Voc 5 0V Temperature 25 C 8 a 1 500 3 100 V a OUT a A 1 400 BE 7 3 000 1 300 2 900 ic 0 1 2 3 4 5 6 7 8 9 10 50 25 0 25 50 75 100 DC INPUT CURRENT uA SD00531 TEMPERATURE C SD00528 Figure 5 SA5223 Input VBias vs Temperature Figure 8 SA5223 Output Voltage vs DC Input Current for small input current 3 800 4 200 gt re 4 0001 py INFINITY A 3 600 e a Voc 5 5V7 3 800 _ Vcc 5 0V Temperature 25 C A VOUT S 3 600 3 400 3 400 oe 20 z M ii E ot L 3 200 9200 Vec 5 0V 8 Po oo oe ooh ooo 5 omy 5 3 000 a a Vour E 2 800 2 3 000 2 600 a 2 800 LE Vec 45V 2 400 E 2 200 2 600 2 000 50 25 0 25 50 75 100 1 10 100 1000 10000 TEMPERATURE C SD00529 DC INPUT CURRENT HA LOG SD00532 Figure 6 SA5223 Output Vas vs Temperature Figure 9 SA5223 Output Voltage vs DC Input Current for large input current 1995 Oct 24 8 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier 150MHz SA5223 0 350 1000 0 300
4. Vei pa 299 w ke Sup eurent gt m 35 2 NOTE Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product AC ELECTRICAL CHARACTERISTICS Typical data and Min and Max limits apply at Ta 25 C and Vcc 5V unless otherwise specified SYMBOL PARAMETER TEST CONDITIONS Sabes UNIT A EE METEO 90 15 oe m MAA EAS 48 Pes e e 150 25 0 7 Q MHz Q A Bandwidth 3dB Test Circuit 1 Input resistance DC tested IN i Input capacitance C Input capacitance including Miller multiplied INT capacitance AR A Transresistance power supply sensitivity Vcci Voce 5 0 5V AR AT Transresistance ambient temperature sensi ATA ZITA MAKE TN tivity p p A o 3 9o N 1 BEE 0 0 0 7 5 0 0 NEN PF E i ES RMS noise current spectral density referred E H to input Test Circuit 2 f 10MHz pA Hz Test circuit 2 7 Integrated RMS noise current over the band Af 50MHz width referred to input Cg 0 1pF Af 100MHz 02 Af 150MHz 16 n IT N OM E Os 0 4pF AF T00MIHZ C fef af SON nn ee PSRR Power supply rejection ratio change in Vos DC Tested AVcc 0 5V hm 5 d PSRR Power supply rejection ratio f 1 0MHz Test Circuit 3 20 d Maximum differential output AC voltage li 0 2mA peak AC 80 mv R AGC loop time constant parameter 10uA to 20uA s
5. to make chages at any time without notice in order to improve design and supply the best possible product Product Production This data sheet contains final specifications Philips Semiconductors reserves the right to make specification changes at any time without notice in order to improve design and supply the best possible product 1 Please consult the most recently issued datasheet before initiating or completing a design Definitions Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or atany other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification Disclaimers Life support These prod
6. INTEGRATED CIRCUITS DATA SALES Y SA5223 Wide dynamic range AGC transimpedance amplifier 150MHz Product specification 1995 Oct 24 IC19 Data Handbook Philips PHILIPS Semiconductors DH LI DS Philips Semiconductors Wide dynamic range AGC transimpedance amplifier 150MHz DESCRIPTION The SA5223 is a wide band low noise transimpedance amplifier with differential outputs incorporating AGC and optimized for signal recovery in wide dynamic range fiber optic receivers such as SONET The part is also suited for many other RF and fiber optic applications as a general purpose gain block The SA5223 is the first AGC amplifier to incorporate internal AGC loop hold capacitor therefore no external components are required The internal AGC loop enables the SA5223 to effortlessly handle bursty data over a range of nA to mA of signal current positive direction sinking only FEATURES Extremely low noise 1 17pA Hz O Single 5V supply Low supply current 22mA Large bandwidth 150MHz 9 Differential outputs 9 Internal hold capacitor ow input output impedances 9 High power supply rejection ratio 55dB Tight transresistance control High input overload 4mA 2000V HBM ESD protection ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG 8 Pin Plastic Small Outline 40 to 85 C SA5223D SOT96 1 For unpackaged die please contact factory ABSOLUTE MAXIMUM RATINGS
7. Power supply voltage Ambient temperature range Junction temperature range Storage temperature range Pp Power dissipation Ta 25 C still air Maximum input current NOTE 6 2mW C above 25 C RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER Power supply voltage 4 5 to 5 5 PARAMETER Product specification PIN DESCRIPTION SA5223 D Package Vcc OUT OUT GND2 SD00369 APPLICATIONS 9 OC3 SONET preamp see AN1431 for detailed analysis 9 Current to voltage converters Wide band gain block Medical and scientific instrumentation 9 Sensor preamplifiers 9 Single ended to differential conversion 9 Low noise RF amplifiers e RF signal processing RATING UNITS AA W mA ws o ow 8 m 1 Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance Oya 1589C W Derate RATING Vcc TA Ambient temperature range SA grade 40 to 485 Ty Junction temperature range SA grade 40 to 105 1995 Oct 24 853 1816 15939 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier 150MHz SA5223 DC ELECTRICAL CHARACTERISTICS Typical data and Min and Max limits apply at TA 25 C and Vog 5V unless otherwise specified SYMBOL PARAMETER TEST CONDITIONS EE A UNIT Input bias voltage Vo Ouutbiss votags rar pas 5 Vos Out ofiseivotage Veme
8. ifferential RT vs DC lin Figure 12 SA5223 Differential RT vs DC Im for large input current for small input current 1995 Oct 24 9 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier 150MHz SA5223 16 9 14 Voc 5 0V SINGLE ENDED OUTPUT 12 7 10 26 SINGLE ENDED OUTPUT gt TEMPERATURE 25 C a 8 S 5 VCC 5 0V KA LLI a Ha a Al o 5 f 4 40 C 2 3j 2 2 0 C N 0 25 C o 1 B 70 C p 85 C y 10 100 300 START 1MHz STOP 200MHz FREQUENCY MHz SD00539 FREQUENCY MHz LINEAR SD00541 Figure 16 Insertion Gain vs Frequency Figure 18 Group Delay vs Frequency 16 10 0 14 TEMPERATURE 25 C 9 0 SINGLE ENDED OUTPUT 12 8 04 Vcc 5 0V mE Temperature 25 C 10 T 7 07 Cg S c 7 0 Cs OpF m 8 6 0 T W a g 5 0 a E DS 2 2 Voc 5 5V g 30 0 Vcc 5 0V 2 0 5 Voc 4 5V 104 Je i d 10 100 300 10 00 300 FREQUENCY MH FREQUENCY MHz SD00540 IR SD00542 Figure 17 Insertion Gain vs Frequency Figure 19 SA5223 Input Current RMS Noise Spectral Density 1995 Oct 24 10 Philips Semiconduct
9. o 502 OSCILLOSCOPE 5000 HF 500 ire Zo 500 GND4 Meaurement done using differential wave forms Test Circuit 4 Duty Cycle Distortion SD00373 1995 Oct 24 Philips Semiconductors Wide dynamic range AGC transimpedance amplifier 150MHz Product specification SA5223 GND Gi GND Voc PAD CENTER LOCATIONS X mm Y mm OUT GND1 0 400 0 053 IN 0 400 0 223 GND2 0 400 0 342 OUT 40 400 0 046 OUTB 40 400 40 154 Voc 0 400 40 380 OUTB DIE SIZE X mm Y mm 1 08 1 32 G2 SD00507 Figure 1 SA5223 Bonding Diagram Die Sales Disclaimer Due to the limitations in testing high frequency and other parameters at the die level and the fact that die electrical characteristics may shift after packaging die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics including temperature range as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device All die are 100 functional with various parametrics tested at the wafer level at room temperature only 25 C and are guaranteed to be 100 functional as a result of electrical testing to the point of wafer sawing only Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack 1995 Oct 24 carriers it is impossible to guarantee 100 functionality through this process There is no post waffle pack
10. ors Wide dynamic range AGC transimpedance amplifier 150MHz SO8 plastic small outline package 8 leads body width 3 9mm 2 5 scale DIMENSIONS inch dimensions are derived from the original mm dimensions Product specification SA5223 SOT96 1 A UNIT max AY A2 As bp c E 2 e He 1 75 0 10 1 25 0 36 0 25 i 4 0 0 19 j 3 8 6 2 5 8 inches 0 069 0 0098 0 0 16 0 0075 0 0 15 Notes 1 Plastic or metal protrusions of 0 15 mm maximum per side are not included 2 Plastic or metal protrusions of 0 25 mm maximum per side are not included OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT96 1 076E03S MS 012AA Edge 24447 95 02 04 1995 Oct 24 11 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier 150MHz SA5223 Data sheet status Data sheet Product Definition 1 status status Objective Development This data sheet contains the design target or goal specifications for product development specification Specification may change in any manner without notice Preliminary Qualification This data sheet contains preliminary data and supplementary data will be published at a later date specification Philips Semiconductors reserves the right
11. teps Doo opem Maximum input amplitude for output duty um cycle of 50 5 Test circuit 4 42 mA Output rise and fall times 10 90 2 ae Group delay F 10NIR2 e r NOTES 1 Does not include Miller multiplied capacitance of input device 2 Noise performance measured differential Single ended output noise is higher due to CM noise 3 PSRR is output referenced and is circuit board layout dependent at higher frequencies For best performance use a RF filter in Vog line 4 This implies that the SA5223 gain will change 1dB 1095 in the absence of data for 1ms i e can handle bursty data without degrading Bit Error Rate BER for 100 000 cycles at 100MHz 1995 Oct 24 3 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier 150MHz SA5223 TEST CIRCUITS SINGLE ENDED R TSE 12 4 Soy RN RN 1k Rinss 1250Q SPECTRUM ANALYZER 500 NETWORK ANALYZER S PARAMETER TEST SET PORT1 1 0uF 1 0uF 500 Test Circuit 2 Noise Test Circuit 1 Bandwidth SD00370 SD00371 Sv BIAS TEE NETWORK ANALYZER S PARAMETER TEST SET PORT1 PORT2 500 TRANSFORMER EN TUE NNN CONVERSION i Au LOSS 9dB L Vcc o NC NHO300HB 500 1000 UNBAL GND4 GND2 BAL Test Circuit 3 PSRR SD00372 50 DUTY CYCLE 5V OFFSET D 5000 E 0 1uF NI e Z
12. testing performed on individual die Since Philips Semiconductors has no control of third party procedures in the handling or packaging of die Philips Semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales Although Philips Semiconductors typically realizes a yield of 8596 after assembling die into their respective packages with care customers should achieve a similar yield However for the reasons stated above Philips Semiconductors cannot guarantee this or any other yield on any die sales SA5223 Product specification Wide dynamic range AGC transimpedance amplifier 150MHz Philips Semiconductors SD00521 Ano 3 zo 3 eI A QNO TWLI IG aNd DOWNY AS TH AS O 1 any O28 019 anyo EM 3 i Hn0L HO vosi z E 1noa Sat NN 2019 Nid ZH S OdVH gav A e i WUQOEL V 8SEVL LG anyo BOEL 60 i OLY oS ZGIN i e 1noa Ano Oc8 3 OS 89 64 84 ASt O tr ONE Hd anyo MW 99 anyo Elo ns anyo anyo 9 lO 29 ji NW NW l HhOL 1 3NVld dOL AS ANV1d NOLLOG Figure 2 SONET Test Board 155Mb s 1300nm 1995 Oct 24 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier 150MHz SA5223 Il HLM Hay OO FO11000 SA5223 5224 SONET 155MB s
13. ucts are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes without notice in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no license or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Philips Semiconductors Copyright Philips Electronics North America Corporation 2000 811 East Arques Avenue All rights reserved Printed in U S A P O Box 3409 Sunnyvale California 94088 3409 Date of release 08 98 Telephone 800 234 7381 Document order number 9397 750 06831 Let make things better oe es amp PHILIPS
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