Cypress MoBL CY62126EV30 User's Manual
Contents
1. lt tsa KNEE DOO lt luzoE gt Figure 8 Write Cycle No 2 CE controlled 14 18 19 lt twe Xs FEE SSSA E M wo s LO thzoe gt otes 18 Data is high impedance if OE Vi 19 If CE goes HIGH simultaneously with WE Vip the output remains in a high impedance state 20 During this period the IOs are in output state Do not apply input signals Document 38 05486 Rev E Page 7 of 13 Feedback 2 CYPRESS MoBL CY62126EV30 PERFORM Switching Waveforms continued Figure 9 Write Cycle No 3 WE controlled OE Low 9 twc Ei taw _ P N r c_ ah u tHA gt HC ts gt twe NS OCHO 9970 as zwE gt CE m tuzwe Figure 10 Write Cycle No 4 BHE BLE controlled OE Low twc lt tha BEBE OOS tLzwE m DATA IO Page 8 of 13 Document 38 05486 Rev E Feedback PERFORM Truth Table MoBL CY62126EV30 CE WE OE BHE BLE Inputs Outputs Mode Power H X X X X High Z Deselect Power Down Standby lag L X X H H High Z Output Disabled Active L H L L L Dat2. is less than t_zc_e is less than tj 7 is less than tj zog and tyzwe is less than tj zyg for any device 13 tHzcE and tyzwe transitions are measured when the outputs enter a high impedance state 14 The internal write time of the memory is defined by the overlap of WE CE BLE or both Vj All signals must be active to initiate a write and any of these signals can terminate a write by going inactive The data input setup and hold timing must refer to the edge of signal that terminates write Document 38 05486 Rev E Page 5 of 13 Feedback MoBL CY62126EV30 PERFORM 15 16 Switching Waveforms Figure 5 Read Cycle No 1 Address transition controlled ADDRESS DATA OUT PREVIOUS DATA VALID DATA VALID Figure 6 Read Cycle No 2 OE 19 1 1 ADDRESS tpo tuzcE CE tACE Lb BHE BLE IMPEDANCE DATA OUT lt lt DATA VALID I Vcc 50 50 SUPPLY Isp CURRENT Notes 15 The device is continuously selected OE CE BLE or both Vi 16 WE is HIGH for read cycle __ EP 17 Address valid before or similar to CE and BHE BLE transition LOW Page 6 of 13 Document 38 05486 Rev E Feedback 11 CYPRESS MoBL CY62126EV30 Switching Waveforms continued Figure 7 Write Cycle No 1 WE controlled 18 191 twc ADDRESS CD tw sot tewe
3. from 8 mA to 11 mA and Icc max from 12 mA to 16 mA for f fmax Changed Icc max from 1 5 mA to 2 0 mA forc 1 MHz Changed Isp2 max from 1 to 4 Changed Isp1 Ispo Typ from 0 5 to 1 Changed IccpR max 1 5 pA to 3 pA Changed the AC Test load Capacitance value from 50 pF to 30 pF Changed t zog from 3 to 5 ns Changed ti from 6 to 10 ns Changed tyzce from 22 to 18 ns Changed t from 6 to 5 ns Changed tpwe_ from 30 to 35 ns Changed tgp from 22 to 25 ns Changed t from 6 to 10 ns Updated the Ordering Information table 925501 VKN Added footnote 7 related to and Iccpr Added footnote 11 related AC timing parameters D 1045260 See ECN VKN Added Automotive information Updated Ordering Information table E 2631771 01 07 09 NXR PYRS Changed CE condition from X to L in Truth table for Output Disable mode Updated template Document 38 05486 Rev E Page 12 of 13 Feedback Ne s CYPRESS MoBL CY62126EV30 1 PERFORM Sales Solutions and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices solution centers manufacturer s representatives and distributors To find the office closest to you visit us at cypress com sales Products PSoC Solutions PSoC psoc cypress com General psoc cypress com solutions
4. down Current Vin gt 0 2V Vin lt 0 2V CMOS Inputs f fmax Address and Data Only f 0 OE BHE BLE and WE Vcc 3 60V 17 Automatic CE Power gt Vcc 0 24 1 4 1 30 uA down Current Vin gt Vec 0 2V or Vix lt 0 2V CMOS Inputs f 0 Voc 3 60V Capacitance For all packages Tested initially and after any design or process changes that may affect these parameters Parameter Description Test Conditions Max Unit Cin Input Capacitance Ta 25 C f 1 MHz Vec 10 pF Output Capacitance 10 pF Notes 4 Vit min 2 0V for pulse durations less than 20 ns Vcc 0 75V for pulse durations less than 20 ns 6 Full device AC operation assumes 100 us ramp time from 0 to V min and 200 us wait time after stabilization 7 Only chip enable CE and byte enables and BLE need to be tied to CMOS levels to meet the lag spec Other inputs can be left floating Document 38 05486 Rev E Page 3 of 13 Feedback MoBL CY62126EV30 CYPRESS PERFORM Thermal Resistance Tested initially and after any design or process changes that may affect these parameters n VFBGA TSOP II Parameter Description Test Conditions Package Package Unit Thermal Resistance Still Air soldered on a 4 25 x 1 125
5. rrent u u gt 200 mA Ambient Temperature with H Power Applied 55 C to 125 C Operating Range Supply Voltage to Ground ial 0 i Ambient Potential i 0 3V to 3 6V 0 3V Device Range Vec DC Voltage Applied to Outputs z High Z Statel 0 3V to 3 6V Vccmax 0 3V CY62126EV30LL Industrial 40 C to 85 C 2 2V to Automotive 40 C to 125 C 96V Electrical Characteristics Over the Operating Range 45 ns Industrial 55 ns Automotive Parameter Description Test Conditions 1 1 Unit Min Typ l Max Min Typ Max Vou Output HIGH Voltage lou 0 1 mA 2 0 2 0 V 1 0 mA Vcc gt 2 70V 2 4 24 V VoL Output LOW Voltage 0 1 mA 0 4 0 4 V lo 2 1mA Vcc gt 2 70V 0 4 0 4 V Vin Input HIGH Voltage Vcc 2 2V to 2 7V 1 8 0 3 1 8 0 3 V Voc 2 7V to 3 6V 2 2 0 3 2 2 0 3 V Input LOW Vcc 2 2V to 2 7V 0 3 0 6 0 3 0 6 V Voltage Vas 27Vt cc 2 7V to 3 6V 0 3 0 8 0 3 0 8 V lix Input Leakage Current GND x V lt Vcc 1 1 4 4 loz Output Leakage GND lt Vo lt Vcc Output 1 1 4 4 Current Disabled lec Vec Operating Supply f fmax 1 tre Vcc 11 16 11 35 mA Current m lout 0 mA f 1 MHz CMOS levels 1 3 2 0 1 3 4 0 Isp1 Automatic CE Power gt Voc 0 2V 1 4 1 35
6. 05 48 o gt w N CORNER ES gt 1 4 8 00 0 10 m4 010 SEATING PLANE 0 26 MAX Document 38 05486 Rev E 0 21 0 05 1 00 7 x i 1 900000 B OOOOOO 18 e 8 r s OOOOOO 6 1 eooo H 1 875 0 75 345 B 42 6 00 0 10 0 15 4 51 85150 D Page 10 of 13 Feedback CYPRESS MoBL CY62126EV30 PERFORM Package Diagrams continued Figure 12 44 Pin TSOP II 51 85087 DIMENSION IN CINCH MAX MIN 10262 0 404 E EJECTDR PIN BOTTOM VIEW TOP VIEW 10 262 0 404 gt 10 058 0 3965 BASE PLANE 4000 2 0 800 F 0300 o Dl 0 0315 0 210 0 0083 0120 0 00475 Q 5 18 517 0 729 18 313 0 721 0 10 004 0 597 0 0835 0406 0 01605 51 85087 A 0 150 0 00592 1194 0 047 Page 11 of 13 Document 38 05486 Rev E Feedback CYPRESS MoBL CY62126EV30 PERFORM Document History Page Document Title MoBL CY62126EV30 1 Mbit 64K x 16 Static RAM Document Number 38 05486 Submission Orig of Rev E
7. CN No Description of Change Date Change 202760 See ECN AJU New data sheet A 300835 See ECN SYT Converted from Advance Information to Preliminary Specified Typical standby power in the Features Section Changed E3 ball from DNU to NC in the Pin Configuration for the FBGA Package and removed the footnote associated with it on page 2 Changed tora from 6 ns to 10 ns for both 35 and 45 ns speed bins respectively Changed tpog tsp from 15 to 18 ns for 35 ns speed bin Changed tuzwE from 12 and 15 ns to 15 and 18 ns for the 35 and 45 ns speed bins respectively Changed from 12 and 15 ns to 18 and 22 ns for the 35 and 45 ns speed bins respectively Changed tsce tgw from 25 and 40 ns to 30 and 35 ns for the 35 and 45 ns speed bins respectively Changed taw from 25 to 30 ns and 40 to 35 ns for 35 and 45 ns speed bins respec tively Changed from 35 and 45 ns to 18 and 22 ns for the 35 and 45 ns speed bins respectively EN NN Removed footnote that read BHE BLE is the AND of both BHE and BLE Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE on page 4 EE _ Removed footnote that read If both and BLE are toggled together then t 2 is 10 ns on page 5 Added Pb free package information B 461631 See ECN NXR Converted from Preliminary to Final Removed 35 ns Speed Bin Removed L version of CY62126EV30 Changed
8. Clocks amp Buffers clocks cypress com Low Power Low Voltage psoc cypress com low power Wireless wireless cypress com Precision Analog psoc cypress com precision analog Memories memory cypress com LCD Drive psoc cypress com Icd drive Image Sensors image cypress com CAN 2 0b psoc cypress com can USB psoc cypress com usb Cypress Semiconductor Corporation 2008 2009 The information contained herein is subject to change without notice Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product Nor does it convey or imply any license under patent or other rights Cypress products are not warranted nor intended to be used for medical life support life saving critical control or safety applications unless pursuant to an express written agreement with Cypress Furthermore Cypress does not authorize its products for use as critical components in life support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges Any Source Code software and or firmware is owned by Cypress Semiconductor Corporation Cypress and is protected by and subject to worldwide patent protection United States and foreign United States copyright laws and interna
9. a Out lOg 1O45 Read Active L H L H L Data Out 10 10 Read Active lOg 1O4s5 in High Z L H L L H Data Out lOg 1O45 Read Active 100 105 in High Z L H H L L High Z Output Disabled Active L H H H L High Z Output Disabled Active lec L H H L H High Z Output Disabled Active L L X L L Data In 10 10 5 Write Active lec L L X H L Data In 105 107 Write Active lOg 1O4s5 in High Z L L X L H Data In lOg lO45 Write Active 0 1 High Z Ordering Information pee Ordering Code Pee Package Type Pes 45 CY62126EV30LL 45BVXI 51 85150 48 ball Very Fine Pitch Ball Grid Array Pb free Industrial CY62126EV30LL 45ZSXI 51 85087 44 Thin Small Outline Package Il Pb free 55 CY62126EV30LL 55BVXE 51 85150 48 ball Very Fine Pitch Ball Grid Array Pb free Automotive CY62126EV30LL 55ZSXE 51 85087 44 Thin Small Outline Package Il Pb free Contact your local Cypress sales representative for availability of other parts Document 38 05486 Rev E Page 9 of 13 Feedback PERFORM Package Diagrams TOP VIEW A1 CORNER 1 2 3 4 5 6 MoBL CY62126EV30 Figure 11 48 Ball VFBGA 6 x 8 x 1 mm 51 85150 5D m ren w gt D gt 8 00 0 10 T 6 00 0 10 0 55 MAX m 0 25 c l iu 2 2 BOTTOM VIEW Al k 0 05 mC V o2s 00 30 0
10. inch 58 85 28 2 C W Junction to Ambient two layer printed circuit board Ojc Thermal Resistance 17 01 3 4 C W Junction to Case Figure 3 AC Test Loads and Waveforms R1 Vcc ALL INPUT PULSES OUTPUT Vcc 90 R2 GND 10 30pF Rise Time 1 V ns Fall Time 1 V ns INCLUDING JIGAND SCOPE Equivalent to THEVENIN EQUIVALENT RTH OUTPUT o why VH Parameters 2 2V 2 7 2 7V 3 6V Unit R1 16600 1103 Ohms R2 15400 1554 Ohms 8000 645 Ohms VTH 1 2 1 75 Volts Data Retention Characteristics Over the Operating Range Parameter Description Conditions Min Typ Unit VpR Vec for Data Retention 1 5 V lecpR Data Retention Current Vcc CE gt Vec 0 2V Industrial 3 gt lt VIN 2 0 2V or ViN lt 0 2V Automotive 30 uA tcp Chip Deselect to Data 0 ns Retention Time tfl Operation Recovery Time tro ns Figure 4 Data Retention Waveform DATA RETENTION MODE gt 1 5V Vocc min tR Notes 8 Tested initially and after any design or process changes that may affect these parameters 9 Full device AC operation requires linear ramp from Vpg to gt 100 us Page 4 of 13 Document 38 05486 Rev E Feedback PERFORM Switching Characteristics Over the Operating Range 10 11 MoBL CY62126EV30 E 45 ns Industrial 55
11. n M Wy 55 PERFORM Features High speed 45 ns Temperature ranges Industrial 40 C to 85 C Automotive 40 C to 125 C Wide voltage range 2 2V to 3 6V Pin compatible with CY62126DV30 Ultra low standby power Typical standby current 1 pA Maximum standby current 4 pA Ultra low active power Typical active current 1 3 mA at f 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed and power Offered in Pb free 48 ball VFBGA and 44 pin TSOP II packages MoBL CY62126EV30 1 Mbit 64K x 16 Static RAM Functional Description The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits This device features advanced circuit design to provide ultra low active current This is ideal for providing More Battery Life MoBL in portable applications such as cellular telephones The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling Placing the device in standby mode reduces power consumption by more than 99 percent when deselected CE HIGH The input and output pins through 1045 are placed a high impedance state when m Deselected CE HIGH m Outputs are disabled OE HIGH m Both Byte High Enable and Byte Low Enable are disabled BHE BLE HIGH m Write operation is active CE LOW and WE LOW T
12. ns Automotive Parameter Description Unit Min Max Min Max Read Cycle tac Read Cycle Time 45 55 ns tAA Address to Data Valid 45 55 ns toHA Data Hold from Address Change 10 10 ns tACE CE LOW to Data Valid 45 55 ns OE LOW to Data Valid 22 25 ns tizoE OE LOW to Low Z 112 5 5 ns tHzoE OE HIGH to High Z 2 13 18 20 ns tLzCE CE LOW to Low 2121 10 10 ns tHzCE CE HIGH to High 2 112 13 18 20 ns tPU CE LOW to Power Up 0 0 ns tpp CE HIGH to Power Down 45 55 ns tDBE BHE BLE LOW to Data Valid 22 25 ns tLZBE BLE LOW to Low 2 1121 5 5 ns tuzBE BLE HIGH to High 2 2 13 18 20 ns Write Cycle 14 twe Write Cycle Time 45 55 ns tscE CE LOW to Write End 35 40 ns taw Address Setup to Write End 35 40 ns Address Hold from Write ns tsA Address Setup to Write Start ns tpwe WE Pulse Width 35 40 ns tew BHE BLE Pulse Width 35 40 ns tsp Data Setup to Write End 25 25 ns tup Data Hold from Write End 0 0 ns tHzwE WE LOW to High Z 2 13 18 20 ns tLzwE WE HIGH to Low 2 1121 10 10 ns Notes 10 Test conditions assume signal transition time of 3 ns or less timing reference levels of Vcc ypy2 input pulse levels of 0 to and output loading of the specified lo and 30 pF load capacitance u 11 AC timing parameters are subject to byte enable signals BHE or BLE not switching when chip is disabled See application note AN13842 for further clarification 12 At any temperature and voltage condition
13. nuary 5 2009 Feedback cypress MoBL CY62126EV30 PERFORM Pin Configurations Figure 1 44 Ball VFBGA Top View S QC YEN CS 9 999 Q7 2 eo Qe We 05 E i CIOCI COCO Figure 2 44 TSOP Top View Table 1 Product Portfolio Power Dissipation Vcc Range V Speed Operating mA Product Range p Standby I g ns EIE erem y 2 Min Typ Max TypPl Max CY62126EV30LL Industrial 2 2 3 0 3 6 45 1 3 2 11 16 1 4 CY62126EV30LL Automotive 2 2 3 0 3 6 55 1 3 4 11 35 1 30 Notes 2 NC pins are not connected on the die Typical values are included for reference only and are not guaranteed or tested Typical values are measured at Vcc Vccaypy Ta 25 C Document 38 05486 Rev E Page 2 of 13 Feedback CYPRESS MoBL CY62126EV30 PERFORM Maximum Ratings DC Input Voltage 1 0 3V to 3 6V Vccmax 0 3V Exceeding maximum ratings may shorten the battery life of the device These user guidelines are not tested Static Discharge Voltage gt 2001V MIL STD 883 Method 3015 Storage Temperature 65 C to 150 C Latch p C
14. o write to the device take Chip Enable CE and Write Enable WE inputs LOW If Byte Low Enable BLE is LOW then data from IO pins IOo through 107 is written into the location specified on the address pins Ag through A45 If Byte High Enable is LOW then data from IO pins through 10 5 is written into the location specified on the address pins Ag through A45 To read from the device take Chip Enable CE and Output Enable OE LOW while forcing the Write Enable WE HIGH If Byte Low Enable BLE is LOW then data from the memory location specified by the address pins appear IOo to 107 If Byte High Enable BHE is LOW then data from memory appears on lOg to 1045 See the Truth Table page 9 for a complete description of read and write modes Logic Block Diagram DATA IM DRIVERS i lt ROW DECODER 1 x 16 RAM Array ls 05 105 AMPS k Y at 5 u COLUMN DECODER i HT m I m lal e m rore p rer lt lt X lt lt o m m E m Note 1 For best practice recommendations refer to the Cypress application note AN1064 SRAM System Guidelines Cypress Semiconductor Corporation Document 38 05486 Rev E 198 Champion Court San Jose CA 95134 1709 408 943 2600 Revised Ja
15. ss software license agreement Document 38 05486 Rev E Revised January 5 2009 Page 13 of 13 MoBL is a registered trademark and More Battery Life is a trademark of Cypress Semiconductor All products and company names mentioned in this document may be the trademarks of their respective holders Feedback
16. tional treaty provisions Cypress hereby grants to licensee a personal non exclusive non transferable license to copy use modify create derivative works of and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement Any reproduction modification translation compilation or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress Disclaimer CYPRESS MAKES NO WARRANTY OF ANY KIND EXPRESS OR IMPLIED WITH REGARD TO THIS MATERIAL INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE Cypress reserves the right to make changes without further notice to the materials described herein Cypress does not assume any liability arising out of the application or use of any product or circuit described herein Cypress does not authorize its products for use as critical components in life support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress product in a life support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges Use may be limited by and subject to the applicable Cypre
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