Kingston Technology ValueRAM KVR16LR11D8K3/24 memory module
Contents
1. arting address 000 only 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZO pin RZQ 240 ohm 1 e On Die Termination using ODT pin e On DIMM thermal sensor Grade B e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height 1 180 30 00mm double sided component Continued gt gt kingston com Document No VALUERAM1423 001 A00 04 16 14 Page 1 continued ValueRAM MODULE DIMENSIONS units millimeters D 00 00 00 00 m 010D o M D o NT N s NE ae u a N 00 N D o i Oo gt N M To O 5 24 ee 30 00 29 60x4 H 24 80x2 21 80x2 18 80x2 sed 15 80x2 R 0 65 MAX TYPICAL 11 00x2 D 8 00x2 3 80 2 30x2 A 0 000 X 50 0 10 gt p CHAMFER 0 50 X 45 DEG ee PLACES OOo O LO LO DEW T oe p m LO kingston com Document No VALUERAM1423 001 A00 Page 22. kingston ime Cann ORL O G Y Memory Module Specifications Value i KVR16LR11D8K3 24 24GB 8GB 2Rx8 1G x 72 Bit x 3 pcs PC3L 12800 CL11 Registered w Parity 240 Pin DIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM s KVR16LR11D8K3 24 is a kit of three 1G x 72 bit CL IDD 11 cycles 8GB DDR3L 1600 CL11 SDRAM Synchronous DRAM low Row Cycle Time tRCmin 48 125ns min voltage registered w parity 2Rx8 ECC memory modules Beresi to Aoiveneresh 260ns min based on eighteen 512M x 8 bit FBGA components per module Command Time tRFCmin Total kit capacity is 24GB The SPDs are programmed to Row Active Time tRASmin 35ns min JEDEC standard latency DDR3 1600 timing of 11 11 11 at Maximum Operating Power 1 35v 2 987 W per module 1 35V and 1 5V Each 240 pin DIMM uses gold contact fingers TIT aaraa o waar a UL Rating 94V 0 The electrical and mechanical specifications are as follows Operating Temperature 0 C to 85 C Storage Temperature 55 C to 100 C FEATURES e JEDEC standard 1 35V 1 28V 1 45V and 1 5V 1 425V Power will vary depending on the SDRAM and 1 575V Power Supply Register PLL used e VDDQ 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V e 800MHz fCK for 1600Mb sec pin e 8 independent internal bank e Programmable CAS Latency 11 10 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e 8 bit pre fetch e Burst Length 8 Interleave without any limit sequential with st
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