Kingston Technology ValueRAM KVR16LR11S8K4
Contents
1. 000 only 4 with CCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 e On Die Termination using ODT pin e On DIMM thermal sensor Grade B e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height 1 180 30 00mm double sided component Continued gt gt kingston com Document No VALUERAM1404 001 A00 02 06 14 Page 1 ValueRAM continued MODULE DIMENSIONS OT units millimeters o oO co oO mm nm Pai Oo M a D nm N N Ta V elna Exa Y N 0 N o LO e PAR Ea ON a LS 00O O s x 0 00 29 60x4 S 24 80x2 21 80x2 18 80x2 15 80x2 E L R 0 65 MAX 11 00x2 i 8 00x2 J C OS N O 0 000 o 1 50 0 10 gt CHAMFER 0 50 X 45 DEG S SO GO 4 PLACES A e P ae Dain s in O LO EE kingston com Document No VALUERAM1404 001 A00 Page 22. kingston a ORL G Y Memory Module Specifications Value i KVR16LR11S8K4 16 16GB 4GB 1Rx8 512M x 72 Bit x 4 pcs PC3L 12800 CL11 Registered w Parity 240 Pin DIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM s KVR16LR11S8K4 16 is a kit of four 512M x 72 bit CL IDD 11 cycles 4GB DDR3L 1600 CL11 SDRAM Synchronous DRAM low Row Cycle Time tRCmin 48 125ns min voltage registered w parity 1Rx8 ECC memory modules Beresi ig AcivelBetrosh 260ns min based on nine 512M x 8 bit FBGA components per module Command Time tRFCmin Total kit capacity is 16GB The SPDs are programmed to Row Active Time tRASmin 35ns min JEDEC standard latency DDR3 1600 timing of 11 11 11 at Maximum Operating Power 1 35W TBDW ss 1 35V or 1 5V Each 240 pin DIMM uses gold contact fingers The electrical and mechanical specifications are as follows per module UL Rating 94V 0 Operating Temperature 0 C to 85 C FEATURES Storage Temperature 55 C to 100 C e JEDEC standard 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V Power Supply Power will vary depending on the SDRAM and Register PLL used e VDDQ 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V e 800MHz fCK for 1600Mb sec pin e 8 independent internal bank e Programmable CAS Latency 11 10 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e 8 bit pre fetch e Burst Length 8 Interleave without any limit sequential with starting address
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