Micron P420m
Contents
1. 700 700GB 1TA 1400GB 1 4TB NAND Flash Type M MLC Flash Drive Product Family AX P420m Production Status Blank Production ES Engineering sample MS Mechanical sample Customer Designator YY Standard Additional Features AB Standard Extended Firmware Features Z Standard 1 Contact factory 3 Oprom 1 bootable Sector Size 12512 Bytes NAND Component AG 32Gb MLC x8 3 3V 25nm BOM Production 1 First generation Warranty Contact your Micron sales representative for further information regarding the product including product warranties PDF 09005aef853f2344 3 Micron Technology Inc reserves the right to change products or specifications without notice p420m hhhl pdf Rev O 8 2014 EN 2013 Micron Technology Inc All rights reserved icron P420m HHHL PCle NAND SSD General Description General Description Micron s P420m SSD is targeted at applications that require high performance and en terprise class storage reliability The P420m delivers extremely high IOPS performance due to its ability to support up to 256 outstanding commands while ensuring full end to end data protection The P420m comes in a half height half length HHHL form factor and uses a second generation Gen2 PCle x8 lane interface on the host side and 32 ONFI 2 1 compliant channels on the Flash side Figure 2 Functional Block Diagram2. NAND NAND NAND NAND NAND NAND NAND NAND KI T KI l H T ANA 32 channels 64 placements of memory NAND NAND NAND NAND NAND NAND NAND NAND DDR3 NAND Storage DRAM Controller PCle x 8 edge connector PDF 09005aef853f2344 p420m hhhl pdf Rev 8 2014 EN 4 Micron Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved Macron Architecture Table 1 Configurations P420m HHHL PCle NAND SSD Architecture The single chip Micron developed ASIC controller along with the host and Flash inter faces provide an embedded ATA host bus adapter a host Flash translation layer Flash maintenance channel control and Flash RAID RAIN protection Flash endurance and reliability are optimized through the Flash maintenance features including static and dynamic wear leveling and RAIN protection Most of these func tions are implemented directly within the controller hardware to optimize perform ance The device is shipped in the configurations shown below User Capacity NAND Flash Process NAND Flash Density Package Count Die per BGA Package 700GB 25 32Gb 64 4 1 4TB 25nm 32Gb 64 8 Per
3. MIN WRITE latency 13 5 posted MIN Custom drivers Windows Server 2012 R2 x86 64 Hyper V x86 64 Windows Server 2012 x86 64 Hyper V x86 64 Windows Server 2008 R2 SP1 x86 64 Hyper V x86 64 Windows 8 8 1 x86 64 and x86 Windows 7 x86 64 and x86 RHEL 5 5 5 10 6 0 6 5 7 x86 64 SLES 11 SP1 SP2 SP3 x86 64 VMware 5 0 5 1 x86 64 VMware 5 5 inbox driver Citrix XenServer 6 0 2 6 1 6 2 Ubuntu 12 04 12 04 4 14 04 LTS Server 64 bit Reliability MTTF 2 0 million hours Static and dynamic wear leveling Field upgradable firmware Uncorrectable bit error rate UBER 1 sector per 10 bits read Power holdup protection for MLC NAND Micron redundant array of independent NAND RAIN technology SMART command set support On chip temperature monitoring Mechanical electrical Half height half length form factor 68 90mm x 167 65mm x 18 71mm PCle compliant x8 lane PCB connector Weight 700GB 199 59g 1 4TB 204 12g 12V power 8 Shock nonoperational 400g at 2ms half sine 150g at 10ms half sine Vibration nonoperational 3 1 grms 5 800Hz at 30 min axis RoHS compliant Notes 1 User capacity 1GB 1 billion bytes 2 Lifetime endurance is measured not in years but in the number of bytes that can be written to the device Workloads are 100 writes 4 Operating temperature is the d
4. OxAC Erase fail count No Number of NAND erase status failures 174 OxAE Unexpected power loss No Number of unexpected power loss occurrences count 187 OxBB Reported uncorrecta No Number of ECC correction failures ble errors count 188 OxBC Command timeout No Number of command timeouts defined by an count active command being interrupted by a HRESET COMRESET SRST or other command 194 OxC2 Temperature No The on die temperature sensor within the con troller ASIC in degrees C capturing the lifetime high and low temperatures measured 202 OxCA Percentage of the rat No Cumulative erase count lifetime erase count as ed lifetime used expressed as a percent Lifetime erase count is the total number of available blocks block en durance for the flash technology read directly from the NAND device 232 OxE8 Available reserved No Percentage of spare blocks remaining space Spare block count 241 OxF1 Power on minutes No Lifetime power on time in minutes 242 OxF2 Write protect progress No Progress toward WRITE PROTECT mode reports 100 when the drive becomes read only 247 OxF7 Cumulative host write No Cumulative host program sector count divided sector count by 100 000 248 OxF8 Total NAND pages No Cumulative program page count divided by written count 100 000 Note 1 Attribute Hex IDs are noted for distribution product Specific OEMs may have different ID values but the same list of SMART commands applies PDF 09005 853 2344 p420m hhh
5. dynamic wear leveling algorithms Over the life of the SSD uncorrectable errors may occur An uncorrectable error is de fined as data that is reported as successfully programmed to the SSD but when it is read out of the SSD the data differs from what was programmed Table 8 Uncorrectable Bit Error Rate Uncorrectable Bit Error Rate Operation 1 sector per 101 bits read READ Mean Time to Failure Endurance The mean time to failure MTTF for the device was measured in a Reliability Demon stration Test at over 2 million hours Table 9 MTTF Capacity MTTF Operating Hours 700GB 2 0 million 1 4TB Endurance for the device can be predicted based on the usage conditions applied to the device the internal NAND component PROGRAM ERASE cycles the write amplifica tion factor and the wear leveling efficiency of the drive The table below shows the drive lifetime for each SSD capacity based on predefined usage conditions The SSD im plements wear leveling in hardware to optimize performance and efficiency while maintaining Flash endurance Table 10 Drive Lifetime Total Bytes Writ Capacity Workload 1 ten Drive Fills per Day Retention 4KB random writes 4 6PB 3 7 5 years 2 months 128KB sequential writes 9 7PB 7 6 5 years 2 months T 4KB random writes 9 2PB 3 7 5 years 2 months 128KB sequential writes 19 5PB 7 6 5 years 2 months Note 1 Workloa
6. 2014 EN 1 6 Micron Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved icron P420m HHHL PCle NAND SSD Compliance Compliance The device complies with the following specifications RoHS Restriction of Hazardous Substances China RoHS WEEE Waste Electric and Electronic Equipment Halogen Free meets IPC low halogen requirements CE Europe EN55022 EN55024 Class A TUV Germany EN60950 UL US Canada EN60950 FCC US 47CFR Part 15 Class BSMI Taiwan CNS 13438 Class A VCCI Japan EN 55022 CISPR 22 Class A C TICK AUS NZ CISPR22 ICES Canada CISPR22 Class A KC Korea EN55022 EN55024 Class A KCC REM MU2 MTFDGARXXXMAX FCC Rules This equipment has been tested and found to comply with the limits for a Class A digital device pursuant to part 15 of the FCC Rules These limits are designed to provide rea sonable protection against harmful interference when the equipment is operated in a commercial environment This equipment generates uses and can radiate radio fre quency energy and if not installed and used in accordance with the instruction manual may cause harmful interference to radio communications Operation of this equipment in a residential area is likely to cause harmful interference in which case the user will be required to correct the interference at his own expense References PCI Express Bas
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8. 3 p GND Ground 28 PETn3 PCle TX Lane3 p GND Ground 29 GND Ground PERp3 PCle RX Lane3 p PDF 09005 853 2344 p420m hhhl pdf Rev O 8 2014 EN 9 Micron Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved Macron P420m HHHL PCle NAND SSD Table 6 PCle Interface Connector Pin Assignments Continued Interface Connectors Pin Side B Side A Number Name Description Name Description 30 RSVD Reserved PERn3 PCle RX Lane3n 31 PRSNT2 Hot Plug Presence Detect GND Ground 32 GND Ground RSVD Reserved 33 PETp4 PCle TX Lane 4 p RSVD Reserved 34 PETn4 PCle TX Lane 4 n GND Ground 35 GND Ground PERp4 PCle RX Lane 4p 36 GND Ground PERn4 PCle RX Lane 4n 37 PETp5 PCle TX Lane 5 p GND Ground 38 PETn5 PCle TX Lane 5 GND Ground 39 GND Ground PERp5 PCle RX Lane5 p 40 GND Ground PERn5 PCle RX Lane5n 41 PETp6 PCle TX Lane 6 p GND Ground 42 PETn6 PCle TX Lane 6n GND Ground 43 GND Ground PERp6 PCle RX Lane 6 p 44 GND Ground PERn6 PCle RX Lane 6 n 45 PETp7 PCle TX Lane 7 p GND Ground 46 PETn7 PCle TX Lane 7 n GND Ground 47 GND Ground PERp7 PCle RX Lane 7 p 48 PRSNT2 Hot Plug Presence Detect PERn7 PCle RX Lane 7 n 49 GND Ground GND Ground PDF 09005aef853f2344 p420m_hhhl pdf Rev O 8 2014 EN 10 Micron Technology Inc reserves the righ
9. Macron P420m Half Height and NAND Flash SSD MTFDGAR1T4MAX MTFDGAR700MAX P420m HHHL PCle NAND SSD Features Half Length PCle Features Micron 25nm MLC NAND Flash ONFI 2 1 compliant Flash interface PCIe Gen2 x8 host interface Capacity 700GB 1 4TB Endurance total bytes written 700GB 4 6PB 4KB random write 9 7PB 128KB sequential write 1 4TB 9 2PB 4KB random write 19 5PB 128KB sequential write Temperature Operating 0 C to 85 C1 Storage in system 0 C to 40 C Storage on shelf 40 C to 85 C Temperature throttling support ATA modes supported PIO modes 3 and 4 Multiword modes 0 1 2 Ultra modes 0 1 2 3 4 5 6 ATA8 ACS2 command set support security feature command set and password login support Industry standard 512 byte sector size support Full end to end data protection Native command queuing up to 256 commands Bootable Power 700GB 25W RMS 1 4TB 25W RMS Random read write steady state performance Random read Up to 750 000 IOPS 4 IO size Random write Up to 95 000 IOPS 4KB IO size Random read write 70 30 mixed workload Up to 220 000 IOPS 4KB IO size Sequential read write steady state performance Sequential read Up to 3 3 GB s 128KB IO size Sequential write Up to 630 MB s 128KB IO size Latency queue depth 1 READ latency lt 100us
10. ND 7 _ FLUSH CACHE EXT ND _ IDENTIFY DEVICE PI _ IDLE ND 0xE3 _ IDLE IMMEDIATE ND 1 _ INITIALIZE DEVICE PARAMETERS ND 0x91 _ READ BUFFER PI 4 _ READ DMA DM 0xC8 _ READ DMA WO RETRIES DM 0xC9 _ READ DMA EXT PI 0x25 _ READ FPMDA QUEUED NCQ 0x60 _ READ LOG EXT PI 0x2F _ READ MULTIPLE PI 0xC4 _ READ MULTIPLE EXT PI 0x29 _ READ NATIVE MAX ADDRESS ND 8 _ READ NATIVE MAX ADDRESS EXT ND 0x27 _ READ SECTORS PI 0x20 _ READ SECTORS WO RETRIES PI 0x21 _ READ SECTORS EXT PI 0x24 _ READ VERIFY SECTORS ND 0x40 _ READ VERIFY SECTORS WO RETRIES ND 0x41 _ READ VERIFY SECTOR EXT ND 0x42 _ RECALIBRATE ND Ox1x _ SECURITY DISABLE PASSWORD PO OxF6 _ SECURITY ERASE PREPARE ND 0xF3 _ SECURITY ERASE UNIT PO 0xF4 _ SECURITY FREEZE LOCK ND 5 _ SECURITY SET PASSWORD PO 1 _ SECURITY UNLOCK PO 2 _ PDF 09005aef853f2344 p420m_hhhl pdf Rev O 8 2014 EN 12 Micron Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved icron P420m HHHL PCle NAND SSD Commands Table 7 Supported ATA Command Set Continued See ATA 8 ACS 2 specification for command details Commands ATA Protocol CMD Code Feature Codes SEEK ND Ox7x _ SET FEATURES ND VARIOUS SET MAX ADDRESS ND OxF9 0x00 SET NATI
11. VE MAX ADDRESS EXT ND 0x37 _ SET MAX SET PASSWORD ND 9 0 01 SET MAX LOCK ND OxF9 0x02 SET MAX FREEZE LOCK ND OxF9 0x04 SET MAX UNLOCK ND OxF9 0x03 SET MULTIPLE MODE ND 0xC6 _ SLEEP ND OxE6 _ SMART DISABLE OPERATIONS ND 0xB0 0xD9 SMART ENABLE DISABLE AUTOSAVE ND 0xB0 0xD2 SMART ENABLE OPERATIONS ND 0xB0 0xD8 SMART EXECUTE OFF LINE IMMEDIATE ND 0xB0 0xD4 SMART READ DATA READ ATTRIBUTE PI OxBO OxDO VALUES SMART READ LOG PI OxBO OxD5 SMART RETURN STATUS ND OxBO OxDA SMART WRITE LOG PO OxBO OxD6 SMART READ ATTRIBUTE WARRANTY PI OxBO OxD1 THRESHOLDS STANDBY ND OxE2 _ STANDBY IMMEDIATE ND _ WRITE BUFFER PO 8 _ WRITE DMA DM OxCA _ WRITE DMA WO RETRIES DM 0xCB _ WRITE DMA EXT DM 0x35 _ WRITE DMA FUA EXT DM 0x3D _ WRITE FPDMA QUEUED NCQ 0x61 _ WRITE LOG EXT PO 0x3F _ WRITE MULTIPLE PO 0 5 _ WRITE MULTIPLE EXT PO 0x39 _ WRITE MULTIPLE FUA EXT PO _ WRITE SECTORS PO 0x30 _ WRITE SECTORS WO RETRIES PO 0x31 _ WRITE SECTORS EXT PO 0x34 _ PDF 09005aef853f2344 1 3 Micron Technology Inc reserves the right to change products or specifications without notice p420m_hhhl pdf Rev O 8 2014 EN 2013 Micron Technology Inc All rights reserved Macron Reliability P420m HHHL PCle NAND SSD Reliability Micron s SSDs incorporate advanced technology for defect and error management They use various combinations of hardware based error correction algorithms and firmware based static and
12. ctor conforms to the PCIe Electromechanical Specification V2 0 section 5 Table 5 1 It is a four lane gold finger connector with 1mm pitch spac ing A mechanical indent is used to separate the PCIe power pins from the differential signal contacts The pins are numbered below in ascending order from left to right Side B re fers to component side and Side A refers to the solder side Table 6 PCle Interface Connector Pin Assignments Pin Side B Side A Number Name Description Name Description 1 12V 12V power PRSNT1 Hot Plug Presence Detect 2 12V 12V power 12V 12V power 3 12V 12V power 12V 12V power 4 GND Ground GND Ground 5 SMCLK DNU JTAG2 DNU 6 SMDAT DNU JTAG3 DNU 7 GND Ground JTAG4 DNU 8 3 3V DNU JTAG5 DNU 9 JTAG1 DNU 3 3V DNU 10 3 3Vaux DNU 3 3V DNU 11 WAKE DNU PERST PCle Reset Mechanical Key 12 RSVD Reserved GND Ground 13 GND Ground REFCLK PCle REFCLK p 14 PETpO PCle TX Lane 0 p REFCLK PCle REFCLK n 15 PETnO PCle TX Lane 0 n GND Ground 16 GND Ground PERpO PCle RX Lane 0 p 17 PRSNT2 Hot Plug Presence Detect PERn0 PCle RX Lane 0 n 18 GND Ground GND Ground 19 PETp1 PCle TX Lane 1 p RSVD Reserved 20 PETn1 PCle TX Lane 1 n GND Ground 21 GND Ground PERp1 PCle RX Lane 1 p 22 GND Ground PERn1 PCle RX Lane 1 n 23 PETp2 PCle TX Lane2 p GND Ground 24 PETn2 PCle TX Lane2n GND Ground 25 GND Ground PERp2 PCle RX Lane2 p 26 GND Ground PERn2 PCle RX Lane2n 27 PETp3 PCle TX Lane
13. ds are 10096 writes PDF 09005aef853f2344 p420m hhhl pdf Rev O 8 2014 EN 1 4 Micron Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved Macron P420m HHHL PCle NAND SSD Reliability Power Holdup Protection If power is interrupted at any time while data is being programmed into the NAND it is possible that data loss may occur and the MLC NAND s lower page may become cor rupted This can cause drive errors to be reported to the host To prevent these errors from occurring the device implements an energy storage solution called a power hold up circuit that maintains power to the NAND while it is being programmed even if power to the system is interrupted By supporting power holdup the device ensures that data integrity in the drive is preserved to prevent the loss of data and the reporting of drive errors to the host PDF 09005aef853f2344 p420m_hhhl pdf Rev O 8 2014 EN 1 5 Micron Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved Macron Electrical Characteristics P420m HHHL PCle NAND SSD Electrical Characteristics Stresses greater than those listed may cause permanent damage to the device This is a stress rating only and functional operation of the device at these or any other condi tions above those indicated in the operat
14. e Specification V2 1 PCI Express CEM Specification V2 0 e ATA8 ACS2 Specification Specification SNIA Performance Test Specification V1 0 PDF 09005aef853f2344 1 7 Micron Technology Inc reserves the right to change products or specifications without notice p420m hhhl pdf Rev O 8 2014 EN 2013 Micron Technology Inc All rights reserved icron P420m HHHL PCle NAND SSD Drive Dimensions Drive Dimensions Figure 4 Half Height Half Length Dimensions Iz 167 52mm 20 13 al 6 595in 0 005 11 65mm 104mm edla mm 0 459in 3 65mm DIA SLOT THRU REF T H T H 1 Eur is BL E booooooood nuu 27mm 0 53 90mm j 2 530in 0 005 2 122in o Epig EE C 68 77mm 20 13 1 unnannnnnaq 2 707in 0 005 1H ncannann
15. ecover after the rebuild process completes Wear leveling is a technique that spreads Flash block use over the entire memory array to equalize the PROGRAM ERASE cycles on all blocks in the array This helps to en hance the lifespan of the SSD The device supports both static and dynamic wear level ing Static wear leveling considers all Flash blocks in the SSD regardless of data content or access and maintains an even level of wear across the drive Dynamic wear leveling monitors available free space on the device and dynamically moves data between Flash blocks to equalize wear on each block Both techniques are used together within the controller to optimally balance the wear profile of the Flash array along with the life span of the device PDF 09005aef853f2344 p420m hhhl pdf Rev O 8 2014 EN 6 Micron Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved Macron SMART Attribute Summary Table 3 SMART Command Reference P420m HHHL PCle NAND SSD SMART Attribute Summary Attribute ID Hex ID Name SMART Trip Description 9 0x09 Power on hours count No Lifetime powered on hours from the time the device leaves the factory 12 0 0 Power cycle count No Count of power cycles 170 OxAA New failing block No Grown defects count 171 OxAB Program fail count No Number of NAND program status failures 172
16. formance Specifications Table 2 Performance Specifications Notes 1 7 apply to entire table Specification 700GB 1 4TB Unit Sequential read 3 3 3 3 GB s Sequential write 600 630 MB s Random read 750 000 750 000 IOPS Random write 50 000 95 000 IOPS Random read write 70 30 mixed workload 170 000 220 000 IOPS READ latency 100 MIN 100 MIN us WRITE latency 13 posted MIN 13 posted MIN us Notes Drive is erased and filled with zeroes to achieve preconditioned state Performance results are with power limiting disabled Contact Micron for more details regarding performance values with power limiting enabled Values derived from tests at room temperature 128KB transfers are used for sequential read write values 4KB transfers are used for random read write values I O performance numbers are measured in steady state using FIO with a preconditioned drive under RHEL 6 3 with a queue depth of 256 and with raw device access on systems with a single Intel Xeon E5 2667 2 90 GHz processor with 6 cores 12 logical and hyper threading enabled Steady state performance is defined as conforming to the SNIA V1 0 Performance Test Specification Latency performance numbers are measured using FIO with queue depth 1 random transfer 4KB transfer size for READ latency 4KB transfer size for WRITE latency Performance numbers are notated in base 10 PDF 09005aef853f2344 p420m hhhl pdf Rev 8 2014 EN 5 Micr
17. ional sections of this specification is not im plied Exposure to absolute maximum rating conditions for extended periods may affect reliability Table 11 Operating Voltage and Power Electrical Characteristic Voltage requirement Value 12Vdc 8 Active power power limiting disabled 25W RMS 700GB 30W RMS 1 4 Active power power limiting enabled Standby power idle 25W RMS 1 4TB only 8W RMS TYP 10W RMS Table 12 Environmental Conditions Temperature and Airflow Min Max Unit Notes Operating temperature as indicated by SMART tem 0 85 C 1 perature Operating ambient temperature 0 55 C 2 Storage temperature in system 0 40 3 Storage temperature offline 40 85 C 4 Operating airflow 1 0 _ m s 5 Notes UL Rej mo If SMART temperature exceeds 85 write performance is throttled Temperature of air impinging on the drive Assumes system is powered off and ready to be powered on Contact Micron for additional information Airflow must flow along the length of the drive parallel to and through any cooling fins 1 5m s operating airflow is recommended Table 13 Shock and Vibration Parameter Condition Shock nonoperational Specification 400g at 2ms half sine 150g at 10ms half sine Vibration nonoperational 3 1 grms 5 800Hz at 30 min axis PDF 09005aef853f2344 p420m hhhl pdf Rev O 8
18. l pdf Rev O 8 2014 EN 7 Micron Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved icron P420m HHHL PCle NAND SSD Logical Block Address Configuration Logical Block Address Configuration The number of logical block addresses LBAs reported by the P420m ensures sufficient storage space for the specified capacity Standard LBA settings based on the IDEMA standard LBA1 02 are shown below Table 4 Standard LBA Settings Total LBA Max LBA User Available Bytes Capacity Decimal Hexadecimal Unformatted 700GB 1 367 473 968 5181FF30 1 367 473 967 5181FF2F 700 146 671 616 1 4TB 2 734 926 768 A303ABBO 2 734 926 767 A303ABAF 1 400 282 505 216 Note 1 1GB 1 billion bytes user capacity Physical Configuration Table 5 Nominal Dimensions and Weight Specification Value Unit Height 68 90 mm Width 18 71 mm Length 167 65 mm 199 59 700GB Unit weight with HH bracket 204 12 1 4TB g 201 85 700GB Unit weight with FH bracket 206 38 1 4TB g PDF 09005aef853f2344 8 Micron Technology Inc reserves the right to change products or specifications without notice p420m hhhl pdf Rev O 8 2014 EN 2013 Micron Technology Inc All rights reserved icron P420m HHHL PCle NAND SSD Interface Connectors Interface Connectors The host interface conne
19. n specifications Updated electrical specifications Updated temperature specification and notes Updated custom drivers list Updated shock and vibration Updated custom drivers list Updated temperature and performance specifications Updated custom drivers list PDF 09005aef853f2344 p420m hhhl pdf Rev O 8 2014 EN 1 9 Micron Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved icron P420m HHHL PCle NAND SSD Revision History Rev C 7 13 Updated note 3 in Performance Specifications section Rev B 6 13 Updated performance and latency specifications Rev A 6 13 nitial release Preliminary status 8000 S Federal Way Box 6 Boise ID 83707 0006 Tel 208 368 4000 www micron com products support Sales inquiries 800 932 4992 Micron and the Micron logo are trademarks of Micron Technology Inc All other trademarks are the property of their respective owners This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein Although considered final these specifications are subject to change as further product development and data characterization some times occur Micron Technology Inc reserves the right to change products or specifications without notice PDF 09005aef853f2344 20 2013 Micron Technology Inc All rights reserved p4
20. on Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved Macron P420m HHHL PCle NAND SSD Functional Description Functional Description Data Retention Data retention refers to the SSD s media NAND Flash capability to retain programmed data when the SSD is powered off The two primary factors that influence data retention are degree of use the number of PROGRAM ERASE cycles on the media and tempera ture The SSD provides power off data retention of two months at 40 MAX when total bytes written TBW is reached Micron RAIN Technology Wear Leveling Redundant array of independent NAND RAIN is a technology developed by Micron designed to extend the lifespan of the device Residing in the ASIC controller RAIN is similar to redundant array of independent disks RAID technology but instead of grouping and striping disks RAIN groups and stripes storage elements on the SSD across multiple channels generating and storing parity data along with user data one page of parity for every seven pages of user data This data structure user data plus parity enables complete transparent data recovery if a single storage element NAND page block or die fails If a failure occurs the SSD au tomatically detects it and transparently rebuilds the data During this RAIN rebuild process the SSD s performance is reduced temporarily but will r
21. rive case temperature as measured by the SMART temperature attribute 5 Assumes system is powered off and ready to be powered on UJ PDF 09005 853 2344 p420m hhhl pdf Rev O 8 2014 EN Micron Technology Inc reserves the right to change products or specifications without notice 2013 Micron Technology Inc All rights reserved Products and specifications discussed herein are subject to change by Micron without notice icron P420m HHHL PCle NAND SSD Features 6 Bootable option determined by part num ber see Part Numbering Information page 3 Boot ability may not be com patible with some systems 7 Power is 30W RMS with power limiting disa bled 8 Varies by capacity See Performance Specifi cations page 5 for details 2 Micron Technology Inc reserves the right to change products or specifications without notice PDF 09005aef853f2344 2013 Micron Technology Inc All rights reserved p420m hhhl pdf Rev O 8 2014 EN Macron Part Numbering Information P420m HHHL PCle NAND SSD Features The Micron P420m SSD is available in different configurations and capacities Visit www micron com for a list of valid part numbers Figure 1 Part Number Chart MT FD G AR 700 M AX Z AB YY ES Micron Technology Product Family FD Flash drive Drive Interface G PCle Gen2 Drive Form Factor AR Half height half length x8 Device Capacity
22. t to change products or specifications without notice 2013 Micron Technology Inc All rights reserved icron P420m HHHL PCle NAND SSD PCle Header PCle Header Figure 3 PCle Header Byte offset 31 0 Device ID 5161h Vendor ID 1344h 00h Status Command 04h Class code 018000h Revision ID 03h 08h BIST Header type 00h Master latency timer Cache line size OCh EZ Subsystem ID 22xxh 700GB Subsystem vendor ID 1344h 2Ch Subsystem ID 32xxh 1 4TB Note 1 Standard Distribution Subsystem ID is 2200h for 700GB and 3200h for 1 4TB A non zero value for xx indicates an OEM product PDF 09005aef853f2344 1 1 Micron Technology Inc reserves the right to change products or specifications without notice p420m hhhl pdf Rev O 8 2014 EN 2013 Micron Technology Inc All rights reserved Macron Commands Table 7 Supported ATA Command Set See ATA 8 ACS 2 specification for command details P420m HHHL PCle NAND SSD Commands Commands ATA Protocol CMD Code Feature Codes CHECK POWER MODE ND 5 _ DEVICE CONFIGURATION FREEZE LOCK ND 0xB1 0xC1 DEVICE CONFIGURATION IDENTIFY PI 0xB1 0xC2 DEVICE CONFIGURATION RESTORE ND 0xB1 0xC0 DEVICE CONFIGURATION SET PO 0xB1 0xC3 DOWNLOAD MICROCODE PO 0x92 _ EXECUTE DEVICE DIAGNOSTIC DD 0x90 _ FLUSH CACHE
23. tg ai rH Ht poan rg p nm 1 uin 1 T III III i 485mm ee 0 191in nu gt 130mm 20 06 8 53mm 3 PLCS 0 075in 0 002 Qi336in 12 15mm _ DIA SLOT THRU 0 478in 1449mm 49 65mm zl 39 15mm 0 570in 1 955in 1 541in MAX 15 00 7 0 591in e S7z15mm 2 250in 59 05mm 0 25 2 325in 0 010 Board 2 00 3 42mm 2 13mm 0 135in 0 084in CAP Controller Stack Clearance 14 71mm 0 579in 159mm Ec 0 063in 31 Board 7 13mm 140mm 0 281in 0 055in Stack clearance CAP NAND 1 58mm 65 4020 25 0 062in 2 575in 20 010 Board m PDF 09005aef853f2344 1 8 Micron Technology Inc reserves the right to change products or specifications without notice p420m hhhl pdf Rev O 8 2014 EN 2013 Micron Technology Inc All rights reserved Macron Revision History Rev Rev Rev Rev Rev Rev Rev Rev Rev Rev Rev Rev O 08 14 N 07 14 M 07 14 L 03 14 K 02 14 J 01 14 I 01 14 H 12 13 G 10 13 F 10 13 E 9 13 D 8 13 P420m HHHL PCIe NAND SSD Revision History Updated custom drivers status Changed documentation status Updated custom drivers list Updated Compliance section Updated Compliance section Updated 12V power range Updated custom drivers list Status changed to Production Updated endurance and data retentio
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