Kingston Technology HyperX PnP 8GB DDR3-1600MHz Kit
Contents
1. Note PnP implementation is only possible in configurations that rogram Mage GAS UNSEEN ONE B DORANG include a BIOS that supports the PnP function Your maximum e 8 bit pre fetch speed will be determined by your BIOS e VDDQ 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V e Burst Length 8 Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not PnP JEDEC TIMING PARAMETERS allow seamless read or write either on the fly using A12 or MRSJ DDR3 1600 CL9 9 9 1 35V or 1 5V e Bi directional Differential Data Strobe e DDR3 1333 CL8 8 8 1 35V or 1 5V e Internal self calibration Internal self calibration through ZQ e DDR3 1066 CL6 6 6 1 35V or 1 5V pin RZQ 240 ohm 1 e On Die Termination using ODT pin e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height 1 180 80 00mm double sided component Continued gt gt kingston com Document No 4806574 001 D00 05 15 13 Page 1 continued MODULE DIMENSIONS o bd J PnP FOR MORE INFORMATION GO TO WWW KINGSTON COM All Kingston products are tested to meet our published specifications Some motherboards or system configurations may not operate at the published HyperX memory speeds and timing settings Kingston does not recommend that any user attempt to run their computers faster than the published s2. Kingston Memory Module Specifications KHX16LS9P1K2 8 8GB 4GB 1Rx8 512M x 64 Bit x 2 pcs DDR38L 1600 CL9 204 Pin SODIMM Kit OVO Supports Kingston HyperX Plug and Play PnP SPECIFICATIONS CL IDD 9 cycles Row Cycle Time tRCmin 48 125ns min ee Gallet is Refresh to Active Refresh 260ns min D ats se Se Command Time tRFCmin ae Row Active Time tRASmin 33 75ns min 7 Maximum Operating Power TBD W per module He DDR3 1600 CL9 9 9 1 35V f UL Rating 94V 0 Operating Temperature 0 C to 85 C Storage Temperature 55 C to 100 C Power will vary depending on the SDRAM used DESCRIPTION FEATURES Kingston s KHX16LS9P1K2 8 is a kit of two 512M x 64 bit e JEDEC standard 1 35V 1 28V 1 45V and 1 5V 1 425V 4GB DDR3L 1600 CL9 SDRAM Synchronous DRAM 1Rx8 1 575V Power Supply low voltage memory modules based on eight 512M x 8 bit DDR3 FBGA components per module Total kit capacity is 8GB Each module kit has been tested to run at JEDEC DDR3L 1600 800MHz fCK for 1600Mb sec pin at a low latency timing of 9 9 9 at 1 35V Additional timing e 8 independent internal bank parameters are shown in the PnP Timing Parameters section e Programmable CAS Latency 11 10 9 8 7 6 Each 204 pin SODIMM uses gold contact fingers and requires 1 35V or 1 5V The electrical and mechanical specifications Posted CAS are as follows e Programmable Additive Latency 0 CL 2 or CL 1 clock i gt
3. peed Overclocking or modifying your system timing may result in damage to computer components kingston com Document No 4806574 001 D00 Page 2
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