Kingston Technology ValueRAM 4 x 2GB DDR3 1333MHz ECC
Contents
1. 1 180 30 00mm double sided component kingston com kingston TECHINOLOGY Value SPECIFICATIONS CL IDD 9 cycles Row Cycle Time tRCmin 49 5ns min Refresh to Active Refresh 160ns min Command Time tRFCmin Row Active Time tRASmin 36ns min Power Operating 1 545 W per module UL Rating 94V 0 Operating Temperature 0 Cto 85 C Storage Temperature 55 C to 100 C Power will vary depending on the SDRAM and Register PLL used Continued gt gt Document No VALUERAM1085 001 A00 04 02 12 Page 1 continued ValueRAM MODULE DIMENSIONS T E i BE units millimeters O m5 00 0 0 ce oO RO MEE pa So N gt E z O Nm E A 5 D O 30 00 29 60x4 24 802 5 21 80x2 DN 18 80x2 15 80x2 p a R 0 65 MAX TYPICAL 11 00x2 gt 8 00x2 7 C 3 80 2 3012 0 A O 0 000 x 1 50 0 10 a o CHAMFER 0 50 X 45 DEG URA 4 PLACES SGD O LO LO SII i CNT DNN a o LO nO kingston com Document No VALUERAM1085 001 A00 Page 22. Memory Module Specifications KVR1333D358R95K4 8G 8GB 2GB 256M x 72 Bit x 4 pcs PC3 10600 CL9 Registered w Parity 240 Pin DIMM Kit DESCRIPTION ValueRAM s KVR1333D3S8R9SK4 8G is a kit of four 256M x 72 bit 2GB DDR3 1333 CL9 SDRAM Synchronous DRAM registered w parity 1Rx8 ECC memory modules based on nine 256M x 8 bit FBGA components per module Total kit capacity is 8GB The SPD s are programmed to JEDEC standard latency DDR3 1333 timing of 9 9 9 at 1 5V Each 240 pin DIMM uses gold contact fingers The electrical and mechanical specifica tions are as follows FEATURES e JEDEC standard 1 5V 1 425V 1 575V Power Supply e VDDQ 1 5V 1 425V 1 575V e 667MHz fCK for 1333Mb sec pin e 8 independent internal bank e Programmable CAS Latency 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e Programmable CAS Write Latency CWL 7 DDR3 1333 e 8 bit pre fetch e Burst Length 8 Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 e On Die Termination using ODT pin e On DIMM thermal sensor Grade B e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height
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