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1. 4 29 Input Deck Fragment id ile e ER 1 4 Input Distributions Controles oot cette eter Pocta turo eter certae eater 7 90 BEE 7 91 Input Parameter Ranges Belge 7 89 Uni 7 90 Integrated Graphics casitas 1 8 See also Advanced Features Automation Tools Integration TEELE calorias tics 7 44 Soie ter EE 7 45 JSN det 7 45 A Eege 7 45 li telligent Seu el EE 1 7 See also Advanced Features Automation Tools Jare 4 56 Juli 4 57 Involking DeckBuild Default SIMUIATON emm 4 13 SILVACO International J Join Function User Supplied Variables 9 54 K Key Legends He ilie K E 7 71 Positioning Key e E 7 70 IT 7 10 See also TonyPlot and TonyPlot 3 L Labels Bitte EE 7 35 miu HE 7 36 O 7 37 See also TonyPlot O 2 5 Loading Examples feo eccrine iio 2 5 M Macros A e 2 77 Main DeckBuild Controls AIM ata 4 26 Choosing a Simulator oooooccccnccnnnoccccnncononancnnnnnnnnnanenens 4 20 COMMOMP AG aos iria or EE 4 20 Execuuon CONTO cast a 4 27 FO ia 4 26 MOSS toa aleta 4 25 A O 4 23 simulator E re e ale tete dl 4 21 Simulator Properties 4 21 Stant Simulator ee 4 21 Main Window Ment Options osteo cR 8 4 Plot Control Wie le TEE 8 7 Plot Control Using the Mouse ooccccccoonccccccocnonccnnonnnnconanoos 8 7 e ell 8 6 See also TonyPlot3D Manager TO 1 5 Applications do ori ac di 3 4 Changing Directores i 0 e d e 3 2 Customizing Attributes EE 3 3 File and Application Windows
2. P LOC Misalign 0 00 5 00 mmm 5 00 Dela CD 0 00 5 00 emm 5 00 Shrink 0 00 5 00 5 00 Comment Defining POLY mask Apply mas Strip mask Figure 4 28 The Mask Popup SILVACO International 4 43 VWF Interactive Tools Write the deck as much as it the process flow appears in the fab Use masks to structure the deck so that it is capable of producing any device on the layout Insert mask statements by selecting the desired mask on the scrolling list then clicking on WRITE At runtime the mask statements are substituted with either deposit or etch or both statements or Optolith layout statements when the optolith flag is used with the mask command MASKVIEWS allows the definition of either barrier or photoresist as the masking material Barrier is a fictitious material that behaves like a perfect photoresist and can be deposited in very thin layers about 0 02 microns to save grid points Barrier is recommended in all situations except when photoresist penetration studies are required 4 11 3 Regions You can also define regions in MASKVIEWS Regions are boolean combinations of masks that uniquely define an area on the layout Regions are used in extract statements in place of X VAL to define the x location where the desired quantity is to be extracted For example a layout for a MOS inverter that contains n and p type devices may have WELL AAD and POLY masks T
3. eee 9 5 Fe GON ti ep et bo e e e pala clan 9 5 See also Devedit File I O HEALING sassfetars eegene 6 26 le HE 6 27 Working With Existing File cccccsececseeeeeeeeeseeeeseeesees 6 27 File Loader Changing Directories ooccccocccccccccncccnnncconcncnancnonononos 7 12 A 7 12 POAC E 7 12 Quar ara once 7 12 Function MacOS EE 1 77 Functions Wu W 7 6 L t Ge 7 79 POUNG WE 1 76 ey nic dem C NE ME A 7 78 DEET 7 76 See also TonyPlot G EIB LEE Ten Formada 10 21 General Curve Examples ccccsseeeeceseeeeeeeeeseeeeesaaeeess 5 33 See also Curves Getting Started WEE 2 3 H E O e EA UR E E 7 72 Histograms A tee LI S 7 31 e leet 7 32 Index 4 CK EE 7 31 Eed eege 7 31 See also Statistics Display History Function REGEL muta 4 38 EXplicitly Saving Slate taci n 2 13 USO MS a 2 12 See also DeckBuild IC Layout Interface BC Une DECKS ey 4 43 Seil WEE 4 46 Mask Bias Misalignment and Delta CD 4 46 EE 4 44 Rules ot UR eebe 4 46 USING DEVE dI siars tantan ea a 4 47 See also DevEdit Eeler 4 43 See also DeckBuild Impurities Meshing Example 1 QING EE 9 13 Displaying the Doping ME 9 14 A ed 9 14 Impurities ADD IMPURITY MODE ooooccccnccccnnncccnnnnccncnononcnnonnnnnononnos 9 46 DENNING eisin tr cT 9 46 Fools RE 9 46 ROLL OFF DIRECTION eese 9 47 EE EE eegene he edees 9 47 Y geg 9 46 Jai tra ve
4. JE E Ves electron EE 5 charge displacement current real component of current imaginary component of current Fowler nordhiem c r rent X7 Hot electron current Y hot hole electron current workfunction difference lumped resistance lumped capacitance lumped inductance circuit bias Ga Pot c rtene 9 Electron sheet resistance for layer Hole sheet resistance for layer Total sheet resistance for layer Bias on layer Photon density mode Laser power per mirror mode Gain mode Real circuit bias Imaginary circuit bias SILVACO International DeckBuild Extract EE real s ocrourt node L Real circuit current y cet imag Cleo nodes L Imaginary Crreuw ck current abcd real mode ABCD real parameter abcd imag mode ABCD imaginary parameter y real mode JE Y weal parameter y imag mode Y imaginary parameter z real mode Z real parameter z imag lt mode gt Z imaginary parameter probe lt probe name gt Atlas probe values elect lt PARAMETER gt Value for speci ited electrical parameter PARAMETER time light frequency freq frequency temp temperature current gain unilateral power gain frequency max transducer power gain luminescent power luminescent wavelength optical source frequency available photo cu
5. eeeeseeeee 3 2 RII TEE 3 5 Ombine EP 3 2 PA E EEE EEEE EEEE 3 1 otaning APpliCaAtONS ee 3 2 Mask Misalignment and CD Experimentation 4 63 Mask Editing Drawing B ier 10 9 E a 10 8 Object Edling a a 10 12 Ke 10 7 SILVACO International PLOY COIN E 10 11 User Defined Objects cas 10 10 Mask Statements sstarisana a 4 43 Mask View Properties ER ELE 10 27 MaskView Utilities A 10 24 ES EE 1 4 4 63 AN ll 10 1 10 13 sello ipse PEU 10 7 See also Mask Editing Example ele 10 3 Nem noH m 10 18 Interfacing With A Simulator EE 10 3 VIE TR VIN OW EEN 10 5 216 ht ME 10 17 Opa ie 10 1 A r EA 10 26 SIMAO EEN 10 13 Se NEE 10 1 10 13 Sue EE 4 34 Starting from DECK Bund GE 10 2 Starting from UNIX ir ul 10 4 Starting Inside The VWF sais cioe aa evet s 10 4 i cue ko er MET NC 10 22 MaskViews Files Cutline Files e betas 10 19 GDS2 amp CIF Import Export E 10 19 GDSII Stream rn TEE 10 21 Loading and Saving WEE 10 18 OPTOLITH Image File cccccooocconcoccoconcccnoncnnno 10 21 MaskViews Main Window co E 10 6 Key Panel E 10 6 Layout and Functionality 10 5 MaskViews Main Window 10 5 See also MaskViews MaskViews Properties E a t eg 10 28 pu SE 10 26 DISP eR ROM a 10 27 AG ANG MB po o c S 10 27 Jul e m a 10 28 Monochrome Operation vasca daa Per DEED sde 10 28 Blue 10 28 MaskViews Utilities A e 10 25 PUROUS terete lee ocu ETE Uer ree
6. 10 20 SILVACO International MaskViews 10 6 4 Creating GDSII Stream Format MASKVIEWS can create simple GDSII stream format If you select Files gt Save GDS2 Format the GDSII stream format interface will appear Figure 10 13 The popup displays all files matching the Filter gds in the directory defined in the directory text field Choose a file name and click on Save and a GDSII stream format file will be saved Maskviews GDS files Figure 10 13 GDSII Stream Format Interface You can also load an existing GDSII file by selecting Import You can then do some necessary editing such as adding labels and saving it to a new GDSII file by selecting Save GDS2 format You can see these electrode labels from MASKVIEWS if you set the simulator to be CLEVER from the Properties menu 10 6 5 Viewing OPTOLITH Image File Selecting Files import gt 0PTOLITH format opens a File Loader popup that allows you to view an OPTOLITH sec file When you select a valid file clicking on the Load button superimposes the mask image contained in the OPTOLITH file over the top of the current layout This option can be used to verify the mask image data being sent to OPTOLITH It can also study the mask image produced by OPTLOTH as a result of an optical correction simulation Clicking on the Dismiss button on the import popup dismisses the popup and removes the imported image from the layout area SILVACO International 10 21 VWF Interactive T
7. 9 50 SILVACO International DevEdit 9 12 ROLL OFF FUNCTION The Roll off function calculates the vertical and the horizontal rolloffs separately and then uses a join function if both a vertical distance and a horizontal distance exists There are two types of rolloff functions analytic and profiled When selecting a rolloff function the first column of choices are the analytic functions described below The next column lists you added doping profiles These are described just after the analytic functions 9 12 1 Analytic Functions Analytic functions are used to describe the rolloff curve from the impurity source area The function is given a distance distance This distance is computed by the join function The join function splits the mesh points distance from the source area into two components the X rolloff distance and the Y rolloff distance How distance is computed and how doping is used is dependent on the function and is described in that section Note Functions ending in Dist will have Reference Value concentration when distance equals the user supplied Distance User Supplied Variables Peak Concentration P Constant K Reference Value R Distance D Location Dependent Variables Distance from Base X Y or Z d X Distance from Base dx Y Distance from Base dy Doping for the current direction p e Gaussian d dK E 9 1 pe S 9 2 e Gaussian Dist 2 d7 First solves for dk E SH 9 3
8. DestinatioH Queue v Tvpe PCL Color Figure 6 29 Optimizer Properties Popup Graphic Printer Category Figures 6 30 and 6 31 shows examples of printed output Line number dz dz 64 7D Parameter name Yi adjust implant dose Yt adjustimplant ener Length etch pl x ST implant dose Response type lox linear linear bg Optimized value 9 569643er 11 23 5 701 0 634106 5 51201612 Initial value 9 5611 25 0 7 50015 Minimum value 1 5009 12 5 0 35 herds Maximum value 1 513 37 5 1 05 bel Line number 75 Parameter name S40 implant ener zy Response type linear Optimized value 3 3429 Initial value a0 Minimum value 45 Maximum value 160 Figure 6 30 Parameters Worksheet Printout 6 28 SILVACO International Gurt rer C mert rome 116 ageet LL GE ml 4465 Parameter tad jast im phat dece 5 0 Creat le D Ne HL Hill wal i yg Parameter WE ad jest mpbteersg la Cretiel ii Finmeter Lenk etch nr 035 A Gurpatanlt el dl eo val ie DeckBuild Optimizer Fanmeern uD implatdos e Cirt orale 5120 1z m wl Frame SD implartegersw C arret rale 34253 Ae rose riore Oz b reza He Optimata rir mehh Total ntos Lit Aver enho time ect 113 3 Total eb peed time Leet atl Te Figure 6 31 Graphic Printout SILVACO International 6 29 VWF Interactive Tools 6 11 Optimization Tuning This section contains information useful when an optimization run does not converge for some reas
9. Figure 7 30 Poisson Solver Popup When the solution is complete a plot of potential is displayed Other solutions can be plotted by using the Plot display popup The list of quantities solved is e Electron QFL e Hole QFL e Electron density e Hole density e ntrinsic conc nio e Potential e Electron e Mobility e Hole h Mobility e Electric Field e Electrical Conductivity SILVACO International 7 47 VWF Interactive Tools Some options to control the solver can be changed by clicking on the Setup button and these options are explained below The Poisson Solver tool provides a built in 1D electrical solver which can be used to perform basic simulations of 1D structures When it is used the display of the first selected 1D plot shows all electrical layers in the structure and just one profile usually net doping An arrow is drawn at the first layer The following controls are available Layers and biases The Poisson Solver popup shows a scrolling list of all electrical layers within a structure The layers are areas of the same material silicon areas are divided up into n type and p type silicon Along with each layer is shown a bias in Volts which is applied to that layer when the solver is used Marker control The left and right buttons can be used to move the marker arrow from one layer to the next The marker arrow is used to select layers for applying an external bias see below
10. String String list ERROR errors detected in Insert string Noe We Tae System Error Co Apply Save as defaults Figure 4 13 Monitor String List Popup 4 5 7 Messages Category The Messages category Figure 4 14 contains option settings that control the display and behavior of DECKBUILD s messages window y Deckhuild Main Control Category 7 Messages Message Window File message out Print Messages Clear Messages Save as defaults Auto MaskViews Select cutfile Mo active e Figure 4 14 Main Control Messages Category The Message Window provides a debugging log of various actions that DECKBUILD takes as it runs such as input decks and switches between simulators The Message Window is useful to track user activity in the input deck since activity messages are all time stamped This times how long various sections of the input deck take to execute The window is enabled with the Message Window setting When enabled the window appears as a small read only text window at the bottom of the main window and below the tty subwindow Messages are logged as a function of the selected Verbosity level A general rule of thumb is as follows e Low Tracks major events such as simulator starts stops and simulator switching Also many warning messages that appear on the screen are logged at this level SILVACO International 4 25 VWF Interactive Tools e Med Low plus auto interfacing inf
11. TonyPlot Setup Click on the Setup button to reveal the options panel on the Tracer tool popup Color All markers placed use the currently selected color Different markers can have different colors by changing the color for each marker placed Tracer path lines are drawn in the same color as the marker that follows it e Max jump This value controls the granularity of the path calculation Higher numbers reduce the calculation time but give only approximate paths with long jumps Smaller numbers produce more accurate paths but take longer to calculate e Lines When turned on lines are drawn along the tracer paths as the paths are calculated If turned off the path is not shown but the tracers still follows the same route e Cycle Three cycle modes are available which control the action of markers when they reach the ends of their paths The first choice stops all tracers as soon as one tracer reached the end The second choice stops each marker as it reaches the end of its own path The third option makes each tracer move in a loop returning to its start point each time it reaches the end 7 16 8 Poisson Solver The Poisson Solver see Figure 7 30 performs an electrical simulation with the 1D structure and calculate profiles for a set of electrical quantities Tonyplot Poisson Solver Electrical Layer Bias 1 Sia tins 2 Polysilicor U VM 4 5i0 2 ins 4 Silicon OR DV Marker setup
12. aa 20 delta 4 l end 3 Followed by Mary had a little and lamb 4 62 SILVACO International DeckBuild loop steps 5 print assign name param3 clO0 2 lamb c3 Mary c8 2 ittle c4 had c7 a l end In the two preceding examples the double quotation marks will not be included when param2 and param3 are substituted into later expressions 4 paraml takes the values 42 38 17 42 38 loop steps 5 print assign name paraml n value 42 38 17 l end 5 paraml takes the values 42 45 2 48 4 51 6 54 8 loop steps 5 print assign name paraml n value 42 delta 3 2 l end 6 paraml takes the values 42 134 4 430 08 1376 26 4404 02 loop steps 5 print assign name paraml n value 42 ratio 3 2 l end 7 This is a simple example illustrating the use of boolean expressions assign name condition l value Sx gt 0 0 amp Sy 3 0 If x and y represent coordinates the value of condition will be true or false accordingly as the coordinates are in a required area of the structure The value of condition could then be used as input to an IF statement 8 It is worth emphasizing that ASSIGN can be used for the simplest of cases See the following example assign name e charge n value 1 6e 19 4 16 4 AUTOELECTRODE Defines layout based electrodes Syntax autoelectrode Description The autoelectrode command causes DECKBUILD to submit electrode definition statements to the current simulator The electr
13. extract start material Silicon mat occno 1 region occno 1 bias 0 0 bias step 0 00 bias stop 5 0 x val 0 1 extract cont interface occno 1 qss 4 0e10 extract done name Electrical conc curve depth n conc material Silicon mat occno 1 x val 0 1 temp val 325 outfile extract dat ED Tree Optolith Create a Data format file plotting a single branch of an ED tree for deviation of 10 from the datum the specified critical dimension CD value of 0 5 The x step defines the defocus step to be used 0 08 representing 8 of the total X axis range for each calculation For each value of defocus at the specified critical dimension deviation the value of dose is interpolated Therefore the resulting curve is dose against defocus for a critical dimension of 0 5 plus 10 extract mame ed 10 edcurve da value DEFOCUS da values CDs da value DOSE dev 10 datum 0 5 x step 0 08 outf ed10 dat Note If no x step is specified the actual curve defocus points are used Elapsed time The timer is reset to 10 seconds a timestamp extracted before and then after a simulation The elapsed time is then calculated by subtraction extract name reset_clock clock time start time 10 extract name r1 clock time lt simulation gt extract name t2 clock time extract name elapsed time t2 Stl Note This extraction does not measure CPU time 5 28 SILVACO International DeckBuild Extract 5 4 Device Extraction Device extr
14. lt EXPR gt lt AXIS_ARG gt lt AXIS_ARG gt lt EXPR gt lt AXIS_ARG gt lt AXIS_ARG gt lt EXPR gt lt AXIS_ARG gt lt AXIS_ARG gt lt EXPR gt lt AXIS_ARG gt lt AXIS_ARG gt lt AXIS_ARG gt lt AXIS_ARG gt log10 lt AXIS_ARG gt lt AXIS_ARG gt lt AXIS_ARG gt S Vad abe see section 5 8 2 Variable Substrctutron SILVACO International DeckBuild Extract expr expr expr expr expr expr lt EXTRACT_MULTIPLE_LINE_SETUP_1 gt EXTRACT MULTIPLE LINE SETUP A EXTRACT MULTIPLE LINE DONE 1 CURVE FUNC CURVE MULTIPLE LINE 1 outfile lt QSTRING gt lt CURVE MULTIPLE LINE gt curve lt AXIS_FUNC gt bias X lt AXIS_FUNC gt ldjunc cap lt MATERIAL gt mat occno lt EXPR gt region occno lt EXPR gt junc occno EXPR X temp val lt EXPR gt soil qss lt EXPR gt workfunc lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt x X xmin lt EXPR gt xmax lt EXPR gt y lt EXTRACT_MULTIPLE_LINE_SETUP_2 gt EXTRACT MULTIPLE LINE SETUP A EXTRACT MULTIPLE LINE DONE 2 CURVE FUNC CURVE MULTIPLE LINE 2 outfile lt QSTRING gt SCURVE MUETIPLE LINE 27i curve lt AXIS_FUNC gt bias N AXIS FUNC C p ion meirion LSMATERIAL mat oceono sSEXPR N region occno lt EXPR gt junc occno EXPR temp val lt EXPR gt soi qss lt EXPR gt workfunc lt EXPR
15. 7 5 Plot Control Each plot has an associated group of parameters collectively known as a display setting which determine how the plot is to be drawn in its subwindow These parameters are independent from the structure s that are represented in the plot so can be applied to a number of other structures to make data comparison easier A plot is controlled using a combination of the following techniques e Plot Selection e Pointer Zooming e Key Commands e Command Stream e Plot Menu Some plots can be displayed in a 3D mode These plots have slightly different rules for control Zooming is not available but it is possible to rotate and scale 3D plots 7 5 1 Plot Selection In order for plots to be controlled and their display parameters changed one or more must be selected When the view consists of only one plot it is always selected When the views consists of multiple plots you must select those to be used Selection is achieved by using either the mouse SELECT button to select just one plot or ADJUST button to toggle the selection state of the plot Also choosing the Select all plots item on the View menu automatically sets all plots to a selected state Plots that are currently selected have a highlighted border while the border on unselected plots remain normal The defaults for these colors are white and gray but can be changed from the General Colors category of the Properties popup If the main window layout mode
16. Allows you to show hide or Show Hide Structure Displays a vector set s proper Shows the vector set Vector Set ties Hides the vector set Allows you to show hide or change the color of a vector Properties Show Hide Structure Displays isosurfaces proper Shows the isosurfaces Isosurfaces ties Hides the isosurfaces Allows you to show or hide the isosurface Properties Show Hide Shows the isosurface Structure Displays an individ Isosurface ual isosurface s properties Hides the isosurface Properties change the color of an isosur face Show Hide Coordinate Identifies the coordinate sys Shows the axes System tems axes The axes X Y and Z also have their own menus These menus perform similar functions except the functions pertain to the individual axis rather than the entire axes of the system Hides the axes Allows you to show or hide the axes and change the numeri cal precison of them Properties For the individual axis X Y or Z you can show hide and change the color of the axis and its label You can also show hide and change the number of tick increment marks in the axis 8 24 SILVACO International TonyPlot3D Table 8 10 Right Mouse Menus Displays the Titles properties Show Shows the Title Hide Hides the Title Legend Displays the Legend s Con tours and Region properties Properties Allows y
17. Example if cond MOSTYPE PMOS method gummel carriers 1 holes else method gummel carriers 1 electrons if end 4 16 9 LOOP L END and L MODIFY These three commands together provide the standard looping functionality Syntax loop steps lt expr gt print JI end break ESmModi y level lt expr gt steps lt expr gt next break print Description Every loop statement must have a corresponding 1 end statement All the commands between these two statements are executed repeatedly for the number of times given in the steps clause of the loop command If you specify the print keyword the values of all user defined variables that vary under the control of the loop will print every time they change If you specify the break keyword in the l end statement the loop will exit on its first iteration regardless of the value of steps Loops can of course be nested with each other and with IF blocks When an 1 end statement is encountered it is associated with the most recent loop statement SILVACO International 4 67 VWF Interactive Tools The 1 modify statement changes the behavior of the current loop or one within which it is nested You specify the level of the loop you wish to modify using the level clause which is described in Section 4 16 3 ASSIGN Without this clause the current loop is assumed You use the steps clause to change the number of times the loop will be executed A value less than or equa
18. The cutline flag cannot be used within VWF because is no guarantee that the specified directory path for the cutline file will exist on any of the remote machines in a network that VWF jobs can be sent to If the current simulator is ATHENA then the following statement causes DECKBUILD to quit ATHENA and start up ATLAS but no autointerface between the two simulators will occur go atlas noauto See Section 4 10 Auto Interfacing 4 66 SILVACO International DeckBuild 4 16 8 IF ELSE and IF END These three commands together provide the standard IF block functionality Syntax if cond lt boolean_expr gt else if cond lt boolean_expr gt if end Description The IF command starts the block If its condition evaluates to true then statements down to the next ELSE or IF END line will be executed If the condition evaluates to false then there will be a s search for an ELSE IF line whose condition evaluates to true If you find such a line the lines in its sub block will be executed At most one sub block in a given IF block will be executed The boolean expression can be an arbitrary combination of boolean variables concatenated with AND OR or NOT operators as described in Section 4 16 3 ASSIGN You can nest IF blocks with each other and with Loops As usual an ELSE or an IF END is associated with the most recent IF There is no mechanism for using brackets or braces to enforce a particular nesting
19. To get the maximum capacitance for the same curve insert the keyword max by editing the syntax created by the popup Notice that in this example a single value 1s being extracted from a curve not the curve itself You still however store the curve used during the calculation into an output file which 1s always the case extract name CV curve Max cap max curve bias ldcapacitance vg 0 0 vb 0 0 bias ramp vg bias step 0 25 bias stop 5 0 x val 0 1 temp val 325 Cur Ede ew dat To find what the capacitance was at voltage 4 3 volts use the following syntax extract name MOS capacitance at Vg 4 3 y val from curve bias ldcapacitance vq 0 0 vbs0 0 bias ramp vg bias step 0 25 brasS stop 5 0 x val 0 1 temp val 325 where x val 4 3 The general form of this syntax is extract y val from curve xaxis yaxis where x val number_on_xaxis and extract x val from curve xaxis yaxis where y val number_on_yaxis where xaxis and yaxis will determine the actual curve The syntax for this example was created by using the popup to write the syntax for the CV curve and then adding the y val where x val syntax in the input deck For more examples on how to manipulate curves see the examples in Section 5 4 Device Extraction Junction Capacitance Curve Extract a curve of junction capacitance against bias where the first region in the top first layer of silicon is ramped from 0 to 5V Capacitance of the first junction occurrence upp
20. View Parallel Perspective apply Reset Dismiss Figure 7 14 3D Popup Elevation Any quantity can be chosen as the elevation The height of the surface at any point is proportional to the value of the elevation quantity Show There are number of optional items that can be drawn on a 3D plot and each is described by a small icon on the Show item Choose the ones desired from this list View The view projection can be one of two choices parallel or perspective choose the one desired Log You can select whether to log each of the axes individually 7 24 SILVACO International TonyPlot Lines It is possible of overlay lines onto a 2D plot Figure 7 15 This is used to show static field lines on ion implant tracks Color Lines can be plotted in the same single color or be multi colored Number Select number of lines to appear on the key Tonyplot Lines Figure 7 15 Lines Popup SILVACO International 7 25 VWF Interactive Tools 7 11 X Y Graph Display The Graph Plot popup see Figure 7 16 shows the current display settings for the first selected graph plot When the settings on the display popup are applied all selected graph plots are affected This permits much easier application of global changes to similar plots in the view The Graph Plot popup contains all the controls needed for complete control of graph plots Tonyplot Display AY Graph X scale Linear Y scale
21. e A display in the input deck of the currently executing line and other features SILVACO International 4 1 VWF Interactive Tools Simulators Many simulators are available 1n the DECKBUILD Library and most are supported by a complete set of interactive popup windows By selecting or moving various items on each popup you can easily generate correct syntax On line context sensitive help is also available A deck is built by going through each desired popup and clicking on a WRITE button This causes syntax to appear in the text editor The deck can be saved and retrieved for later use The popups have the additional feature of input deck parsing To do this highlight a section of the input deck and choosing Parse Deck All appropriate popups will then re configure themselves to reflect the syntax For example if you highlight an ATHENA IMPLANT statement and press the Parse Deck the ATHENA Implant popup will appear This popup would reflect the values in the highlighted syntax For manual deck editing DECKBUILD has a built in text editor The text editor allows easy point and click editing cut and paste to and from any other window find replace multiple scroll views and other features Autointerface 4 2 DECKBUILD allows and encourages concatenating of decks from different simulators For example a simulation can start with SSUPREMS for fast 1 D process simulation move into ATHENA for 2 D process simulation and be followed by a
22. e Files contains a menu of file functions print functions and the empty or delete all function Define lists all of the layout screen and object definition options e Edit contains all of the polygon edit commands Options contains optional utilities such as zoom and pan on line manual and release notes e Write file creates the cross section file s that is used with simulators Properties displays the user configurable Properties window Key Panel There are four object display modes in MASKViEws Layers Phases Transmittance and Regions These are selected from the menu at the top of the key panel e Layers The layout levels in the structure are displayed The current edit layer is chosen by selecting the layer name from the list Levels are made visible invisible by selecting deselecting the layer key item next to the layer name Selecting a layer while holding down the SHIFT or CONTROL keys causes all other layers to be disabled or enabled respectively If the number of layers in the layout becomes too great to be displayed down the side of the screen then only some of the layer keys are shown Nudge up and down buttons are then displayed allowing the layers keys which are to be shown to be scrolled up and down e Phases The layout screen displays masks from one level only The key panel shows phase shift values for each mask on this level The current default phase shift value used for editing is set by selecting
23. silicon SOZ 0 21 0 212 0 214 0 216 Distance along line SIWACO International 1995 Figure 2 9 Doping Concentrations in the Oxide After you zoom into a region of a graph a zoom pan box appears in the upper left corner of the window as shown in Figure 2 9 Selecting any of the eight direction arrows on this box pans the graph in that direction In other words plot the graph in areas adjacent to the current area in the given direction To return to the original un zoomed graph select the button that is marked with a diamond in the center of the zoom pan box Printing A Plot Select the Print button to print out the plots This sends a copy of the plot directly to your default printer You can use other printers with the print button Note Your system manager will be able to tell you which is your default printer and where it is located if you are not sure about this SILVACO International VWF Interactive Tools 2 5 4 Using The History Function The history function provided by DECKBUILD allows you to make corrections and changes during an interactive simulation session without requiring a re simulation of the entire input deck from the beginning This can save a lot of time during input deck debugging and when performing verification or calibration The history function allows you to move backwards through an input deck by selecting a previously simulated command line and initializing the simulator back to that point
24. the most useful is the set command The Internal interface is intended to include set statements which define the required input values to be substituted into the device experiment Using VWF AUTOMATION TOOLS these inputs can be split on varied over many simulations to provide Device experiments without using process simulation SILVACO International 4 57 VWF Interactive Tools 4 15 Remote Simulation 4 15 1 Overview DECKBUILD has the capability to be running on a local host while executing a simulation on a remote host The simulation is run using a remote shell command while displaying the output back to the tty window in DECKBUILD In interactive mode the remote host for each simulator can be specified using the Simulator Properties popup accessed from the Main Control popup For batch mode run you can use the remote hostname command line option This specifies the same remote host for all simulators used 4 15 2 Remote Options Within the Main Control popup under the Options category there are some remote options that can be used to customize remote simulation Remote tmp directory sets the remote simulation tmp directory which must be mounted on the host executing DECKBUILD and the host executing the simulator Remote shell command specifies the remote shell command to be used for remote simulation This option may need to be set with a specific path such as Solaris2 amp decalpha osfl bin rsh Solarisl jus
25. 3 areatest in 3 atan in File anelex28 in Figure 4 8 Save As Popup Loading an Existing File Any plain ASCII text file can be loaded into DECKBUILD To load an existing file choose the Open item from the File menu A file loader popup is displayed showing a list of directories and files corresponding to the Filter field in the current working directory Figure 4 9 To move between directories either modify the Directory field and press the Return key or double click on the required directory in the list To load the required file either highlight it in the list and select the Open button or double click on the required file Note Loading a file from a new directory moves DECKBUILD S current working directory to that location y Open file Directory 4 marting work test deckbuild Filter in 4 go up a level O sflm 3 1dvt2 in Donen 3 amex 1 in 3 andy in 3 anelex23 in 3 anexo2 in 3 areatest in 3 atan in File amez10 in Figure 4 9 Open File Popup 4 16 SILVACO International DeckBuild Saving Changes After changing the contents of an edited file for example by changing a diffusion parameter or by appending a device test to the end of a process deck you can save the changes back to the same file or save the deck as a new file To save the changes back to the same file choose Save from the File menu DECKBUILD saves the current file and makes a backup of the origina
26. CURVE MULTIPLE LINE 4 outfile lt QSTRING gt CURVE MULTIPLE LINE 4 curve AXIS FUNC bias X SNXIS EUNC dnsecone D Deconce Pap ET GrP T intrinsic potential Eeer POMO DL ee afield econductivity X ndterssle tsrlrcorn g Toelvsrlirccon X region occno EXPR mat occno EXPR N y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt workfunc lt EXPR gt soi semi poly temp val lt EXPR gt X xmin EXPR xmax lt EXPR gt X 5 14 SILVACO International DeckBuild Extract EXTRACT MULTIIPLE LINE DONE 5 sheet res p sheet res n sheet res conduct p conduct n conduct N material stlitcon pbolysi licor region otceno lt EXBR gt X mat occno EXPR N y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt 3 workfunc lt EXPR gt soi semi poly incomplete temp val lt EXPR gt EXTRACT MULTIPLE LINE SETUP 5 EXTRACT MULTIPLE LINE SETUP A EXTRACT MULTIPLE LINE SETUP B SEXIBACI MULTIPLET LNE SETUP A gt lt MATERIAL gt mat occno lt EXPR gt region occno lt EXPR gt bias lt EXPR gt bias start lt EXPR gt bias step lt EXPR gt bias stop lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt lt EXTRACT MULTIPLE LINE SETUP BS interface occno lt EXPR gt qss lt EXPR gt Default value qss 1el10 lt DEV AXIS Va lt elecerodge gt Volta
27. De junction depth or threshold voltage we are now extracting a curve 1 e an array of values The syntax for specifying a curve using extract is curve X axis y axis Here the x axis is the applied bias which is specified by the keyword bias and the y axis is the one dimensional n type conductance which is specified as 1dn conduct Also specify conductance that should be used for the curve by specifying the material In this case it is Silicon In a general structure there may be more than one layer of silicon Therefore to make the requirement more explicit you can state interest in the first occurrence of the material Silicon and the first region of Silicon in the device This is done using the parameters mat occno 1 and region occno 1 The full specification for the curve we want to extract is then curve bias ldn conduct material Silicon mat occno 1 region occno 1 Since there is only one silicon region in this structure this could have been abbreviated to curve bias ldn conduct material Silicon When a single value is extracted such as Vt the extract system prints the value to the tty output region and logs the value to the file results final When extracting a curve you must specify a file in which the curve is saved by specifying out file value as part of the extract statement In this case save the extracted curve in a file called extract dat The last statement for the conductance curve extraction is extra
28. It is really under a region not a mask To eliminate confusion with DEVEDIT material regions use the parameter under mask SILVACO International 4 47 VWF Interactive Tools 4 12 UTMOST Interface 4 12 1 Overview The UTMOST interface allows Silvaco s parameter extraction package UTMOST III to load in data from one of more device simulation runs and perform SPICE model parameter extraction With the VWF in particular this allows you to generate response surfaces that model SPICE parameters as a function of process variations including study of failure analysis process synthesis yield analysis and with the SPAYN interface worst case modeling 4 12 2 Setting Up An UTMOST Input Deck Although UTMOST normally runs as an interactive X based program you can run without its graphical interface and read commands from an interactive prompt when run under DECKBUILD like the other simulation tools UTMOST Input Deck Example HHH HEHEHE START UTMOST SIMULATION 444 44444 go utmost utmost type mos it load Utmost model filemodel bsim3_pmos it set value for TOX set tox in m tox 1 0e 10 device TOX Stoxx I T define device specifications setup width 1 0 length 0 6 polarity P 3 load Atlas log files init inf IdVg Vb log master init inf IdVd Vg log master append select required characteristics for device deselect ID VG VB all select ID VG VB device 1 deselect ID VD VG all select ID VD VG device 1
29. Placing Labels Labels are placed on the selected plot in one of two ways by clicking to place a simple text only label or by dragging to place a label with leader line see Figure 7 22 TonyPlot V2 8 22 A SES File ci View cl Plot ei Tools vi Print ei Properties Help E ATHENA Data from moslex01 0 str Poly gate vi substrate electrode 0 6 Microns Click to place P changes alignment or drag to get leader SILVACO International 2004 Figure 7 22 Plot With Labels Added If a leader label is being placed the start of the drag is where the text appears and the end of the drag will be the end of leader i e the position to which the leader points As with any drag operation holding down the Shift key at any time moves the start point as well as the end point of the drag When the drag is done the label text is positioned correctly relative to the direction of the leader line For example if the leader points down and to the right the text is placed so that the leader starts from the bottom right corner of the text If a simple text only label is being placed the cursor indicates how the text is positioned by pointing to a corner For example if the cursor points up and right the text is placed so that the clicked point is in the bottom left of the text The cursor can be changed to obtain different alignments by pressing the p key on the keyboard Four positions are available A label can be
30. STELLAR and UTMOST SILVACO International iV Table of Contents Chapter 1 INUOGUCHION EE 1 1 ti Gemino SIared WEE 1 1 1 2 interactive TOOS Eeer e A is 1 3 pee DCC KUNG EE 1 3 k2 2 Ken iare GE 1 4 RCC AD A oe ee ee eee E eee ek eee eee E 1 4 EE NAS EE 1 4 E le dn EE 1 4 12 TEL EE 1 5 AS o eras Med 6 Syne dat ete arcana a ante ha bape biden EE 1 5 1 9 VWF Automation RE EE 1 6 To Ne VIVA Wdlel EE 1 6 1 92 VWF EXDCIIMENIAUON EE 1 6 EE eee ee ts bea bett ee eee ee ee 1 7 1 3 4 Productivity Enhancements naa ccc ccc c ccc ete eee tee eee eee tees HH 1 8 Chapter 2 d eltern 2 1 2 1 OVCINICW secius tare Hanae oed ao ee 2 1 2 27 testis EE 2 2 2 3 Gelt ind Stared EE 2 3 2 4 Selecting and Loading An Example our o cron ELE A RR a theese 2 5 2 5 Process SIMA MON oer erriren diea ur dad ee ed ine A MIU moss 2 7 2 5 T RUNNING a SIMUIANON s 39932 902 wei aude Peto a ao caer a oda x iot eoa Suo XO oe een vax 2 7 2 5 2 PONGA SONUCU So Mau wine rero bi ce bo o woes Frase fou vedere RAE b 2 8 253 Beie Wel VIe 2 9 2 9 4 USING MEAS Ee e BEE 2 12 2 5 5 GOMPANING Structure FMS s sco d dene EE 2 13 2 5 6 Overlaying TWOTPIOISscs 5d cde arant 9 935 eo Rc OR Cer En eb e Re EE 2 15 2 5 7 Continuing the Process Simulation 2 15 2 9 0 Plotting E RE le 2 16 2 5 9 CONQUE RIO eras pone a O oo od AE ERA AS ES RATA 2 17 2 5 10 Interactive Cutline Plots 3 vea cuotas od bU A vrbe rub WES 2 18 2 9 4 age ale Process ET rs dir
31. Setup Click on this button to reveal the Poisson Solver options panel see below Solve Click on this button to perform the simulation with the current options and biases Applying A Bias To A Layer To apply an external bias to any layer the marker must be moved to any layer that is not an insulator This can be done either with the left and right buttons on the popup or by using the mouse pointer to drag the arrow into a layer The current layer is selected in the scrolling list on the popup The bias can then be specified by typing the value into the field marked Bias on the popup Press Return to update the list For p type silicon the bias is converted to a negative value automatically and to a positive value for n type When all the biases desired have been set the solver can be initiated by clicking on the Solve button Setup The Poisson Solver s setup panel is accessed by clicking on the Setup button on the Poisson Solver popup The following controls are available Display Solved Quantities This list shows all the quantities that the solver calculates However only the ones selected are displayed when the solution in complete All other quantities can be accessed later from the Plot Display popup If other quantities are to be displayed automatically choose them here More than one can be selected Note that this does not affect which quantities are calculated only the ones that are displayed by defau
32. The results are collected and stored in a database The data is then conveniently analyzed using response surface methods and graphical animation SILVACO International Introduction 1 3 3 Advanced Features The VWF AUTOMATION TOOLS contain numerous advanced features many of which represent significant advances in semiconductor technology CAD Some of these features are summarized below VWF Database The heart of the VWF AUTOMATION TOOLS is an object oriented database that holds all input and output data in an efficient manner You access the database through an intuitive icon and menu driven GUI The status of an experiment in progress can be displayed graphically and can be modified The database supports libraries and workspaces Libraries are used to store relatively long lived stable objects that are useful across a project or organization Workspaces typically contain shorter lived information used by an individual engineer Objects can include working input decks process flows mask layouts and electrical tests DECKBUILD can be used as a hierarchical folding editor when it is used in the VWF AUTOMATION TOOLS Whole sections of text can be replaced by labels indicating their function and each section of text can be stored in the database as an object Full decks can be constructed by using the mouse to drag and drop objects to the required position in DECKBUILD Process Flow Editor Decks can also be built by dropping obje
33. VWF Interactive Tools XIV 9 5 2 Selecting The Resolution 0 0 cc cece IH IH mH mr 9 34 9 6 EDITING REGION LEE 9 35 9 0 1 Adding aie MITT diris earthen E Ee mek ta lore e wa 9 35 3 60 27 Selecting Region UE EE 9 35 9 CC DRAWING El LEE 9 36 Tl OVOIVIOW a Ud EE Ran are a ee ieee Pade 9 36 9 7 2 Setting Elie Tel 9 37 NASA Deleting IRC EE 9 37 ITA MOGITV TACOIONS otra ed TEEN 9 38 9 7 5 Deleting Boundary Points 5 a ET RUE e di aa 9 38 9 8 DOPING DEFINITION EE EE 9 39 EE 9 39 9 8 2 Defining an Impurity Source Line 0 ccc ccc cece ete tent III 9 39 9 8 3 Defining an Impurity Source Dos 9 39 GEERT lee gedd EE 9 40 9 954 Deleng SOURCE ODOC Sax dni sci rer pase wee teeta eege Eeer Sen 9 40 O07 RA ET e NETT AS 9 40 9 9 MESHBUILD MESHINQ ag de tention ania SE A 9 41 GE e Stadt ao eb eo deb aida id dida 9 41 99 2 Boundary CONGHICNING EE 9 41 DOO IMA REPORTE NET e M woes 9 42 9 9 4 Mesh Consta Gite uo acte a ge Red eb o tend decet bb fui ate de io s ES OF ace 9 42 9 9 9 Adaptive MES sooo tries tote ato aetna decente Gala baba tei dritte nite dp br qu dS 9 43 OPO Gee MELON M RR ER A TIE ELETTRICI 9 43 9 9 7 Manually Refining The MESI ocius eu anite ien o S Ghd ada 9 44 9 9 8 Manually Relaxing A Mech 9 44 9 9 9 On Sor PrTOOBOETMOSE WEE EE 9 44 9 9 10 Work Area Resizing ua dona Dd o ad E 9 44 EE E Klierfer 9 44 9 10 CREATING A NEW MESIT is aux ade ton d nau Qe dh e Pa CR
34. and to add new features at any point along the X axis To move a line click the SELECT mouse button anywhere near one of the lines and then drag the mouse the line moves to the feature nearest to pointers position This method allows you to pick up a line move it to a new position and put it back down It is also possible to create new features To do this hold down the SHIFT key and repeat the procedure above This time the marker line can be moved to any x location When you release the mouse button a new feature is added at the current line position and the line is moved to it SILVACO International 7 45 VWF Interactive Tools 7 16 7 Tracers Tracers are used to illustrate the path of vector fields within 2D Mesh structures They are drawn as small markers which can be positioned anywhere inside a vector field and are then animated by TonyPlot to show field strength and direction The Tracers popup Figure 7 29 is used to control the positioning and animation of the markers and choose some options associated with them Tonyplot Tracers Quantity E Field Tracers placed O of 20 ch cl m slow med fast Calculate Setup Dismiss Color E Cycle Max jump 20 Lines Off On Min jump 1 0 Done Figure 7 29 Tracers Popup e Quantity This selects the vector quantity that the tracers should follow These are the same quantities that are shown on the Vectors popup accessed from
35. curve When multiple statement extract operations are performed the extract system has to be told that a multi statement extract operation is being defined To do this use the start continue and done keywords The start keyword indicates the first statement of a multiline extract operation The continue keyword indicates an intermediate line The done keyword indicates the last line For example the statements that define a four line extract operation would start as follows 2 20 SILVACO International Tutorial Extract Start extract CONT extract cont extract done Use as many extract continue statements required including as in the example that follows zero The conductance of the channel is extracted on a one dimensional line through the gate with the gate poly biased between 0 and 2 volts The first extract statement defines the biasing conditions on the poly and is an extract start statement Select the first occurrence of the material Polysilicon on a line through the gate x 0 45 and apply the biasing conditions from 0 to 2 volts in steps of 0 2 volts extract start material Polysilicon mat occno 1 bias 0 0 bias step 0 2 bias stop 2 x val 0 45 The use of the continuation character at the end of the first line allows a single extract statement to span more than one line Once you specify the bias conditions you can extract the conductance curve Unlike the previous two examples where a single value was extracted
36. gt Preferred Abbreviation SUBSTR Description The substrate is a special region with no thickness that is placed at the bottom of the device The substrate is always considered to be an electrode Parameters DELETE Substrate not longer exists NAME lt c gt The name of the substrate electrode default substrate ELECTRODE ID lt n gt elec id Describes region as an electrode setting the electrode elec number to lt n gt If lt n gt is not supplied the lowest used electrode id number will be used WORK FUNCTION lt n gt work func Used only if electrode id is used to set work function for materials This is not currently used by any simulators however may be used in future releases APPLY lt boolean gt for internal use only default true If apply false only set parameter in the substrate panel Examples Make the substrate electrode 3 and named collector substr name collector elec id 3 work func 4 28 Replaces Card Substrate Delete t Name c Electrode lt n gt A WorkFunction lt n gt NoApply lt boolean gt 9 13 25 WORK AREA Set viewing area of canvas Syntax WORK AREA X1 lt N gt X2 lt N gt YL lt N gt Y2 lt N gt A LEFT lt N gt RIGHT lt N gt TOP lt N gt BOTTOM lt N gt A POINT 1 lt POINT2D gt POINT 2 lt POINT2D gt Description Set the viewing area seen in the main window of DEVEDIT X windows mode only 9 84 SILVAC
37. it is seen to contain TPCS statements These statements are read by TONYPLOT and executed to set the plot display to its state when the set file was created There is a close link between TPCS and the TONYPLOT graphical user interface GUI Many statements directly reflect actions you perform on the popups such as the apply statements and plots the select statement TPCS commands can be used at any time by selecting Command Stream from the main File menu Users of csh should make sure that TONYPLOT is running as a foreground process to ensure that the commands typed go to the correct program The TPCS prompt is displayed in the window from where TONYPLOT was first started This looks like this TPCS gt and indicates that TONYPLOT is waiting for commands At the same time it is still possible to use the normal GUI to control TONYPLOT 7 21 1 Help TPCS has a built in help system Enter help at the TPCS prompt to get started Entering help word where word is a topic name enclosed in quotes gives a list of commands associated with that topic For example TPCs gt help contours shows a list of all commands that have something to do with contours 7 21 2 Finishing TPCS To end a TPCS session enter an end of file character from the keyboard This will be CTRL D on most systems Syntax The complete syntax for TPCS is given here Note that these statements appear in no special order and no complete exp
38. mode you want to configure Don t forget to click on the OK Apply button to apply your changes When using these settings make sure you turn on the relevant display mode The Draw Mode shown in the bottom half of the Display Modes Windows controls the way the faces of a structure are displayed Table 8 6 describes these modes Table 8 6 Draw Modes eon we owen Solid Fill The solid fill mode shows all the exterior faces of the object Edges Only In this mode only the exterior sharp edges of the object are shown Mesh This mode shows the mesh of the external faces by default You can change this mode to display all the mesh in the structure or in a vol ume specified by a cylinder The possible settings are Faces Ele ments tetrahedra or prisms or Volume Cylinder See Figure 8 4 Solid Fill This is a combination of the solid fill mode and the mesh mode i e it With Mesh fills all the cells that make up the object SILVACO International 8 9 VWF Interactive Tools To further configure the appearance of the mesh of the structure choose the Options button in the lower section of the Display Modes Window The Draw Mode Options Dialog shown in Table 8 4 will appear Mesh Face Element Volume Cylindrical Volume Figure 8 4 Draw Mode Options Dialog Box Table 8 7 shows the different options available in the Draw Mode Options Dialog Table 8 7 Draw Mode Options Dialog Box Draws the mesh for the s
39. o c D mt o o I 1e17 doping cm 3 Click to place P changes alignment or drag to get leader SILVACO International 2005 SILVACO International B 2 DBInternal B 2 The Template File The template file is a description of the class of simulations you want to perform It should be a deck that will execute correctly when run within DECKBUILD Any variables that you need DBINTERNAL to control must be defined on a set line For example the file resistor template in has the line set doping lel6 so DBINTERNAL can change the value of the variable doping DBINTERNAL ignores the actual value on the set line in the template file It is safe to set variables that DBINTERNAL doesn t control They will remain with the value defined in the template file The variable is normally used to set numbers in the template file For example doping uniform n type conc Sdoping where the doping concentration is being set by the variable doping But it is also useful to be able to use the value as a string in a filename In this instance you should enclose the variable name in single quotes For example log outf dop doping log extract init antile dops doping log So if doping had been set to 1e16 the filename would be dople16 log The template file may have extract statements For example extract nit titi le dops doping log extract name res grad from curve i anode v anode where y val 1 D
40. region The Refresh button is used to refresh the display after a region has been defined You can still perform polygon editing when in Region mode All editing however is still performed in terms of layout layers and not as regions A Maskviews Regions Region E naa paa ngate pgate nfield co Title naa true false don t care true don t care true don t care true don t care true don t care true don t care true don t care true don t care true false don t care Figure 10 14 Regions Editor 10 22 SILVACO International MaskViews The Create button at the foot of the popup creates a new layer This layer contains the objects formed by combining the other layers in the manner specified in the Regions popup The polygons on the new layer appear exactly as the shapes shown in the Regions view for the currently selected region The new layer is named the same as the current region An error is generated if that name is already in use Objects created by intersecting named electrodes retain the name of any source electrode If the object is formed by intersection of more than one named electrode the name given to the created object is one of the names of the source objects Note You must at least specify one layer as TRUE in the Regions popup to create a new layer 10 7 2 Rescaling Rescale is used to globally expand to shrink the whole IC layout to study the effect of larger or smaller circuits Sel
41. sets global constraints constr mesh max angle 100 allow only non obtuse triangles in semiconductor regions constr mesh mat type semiconductor max angle 90 allow region 1 to have slightly obtuse triangle even if region is a semiconductor constr mesh reg 1 max angle 95 now let region 1 default to it material type or the global constraints const mesh reg 1 max angle clear all currect setting in region 3 and the metal material type constraints and set possible triangles to very obtuse const mesh reg 3 mat type metal default max angle 180 Make sure the triangle in the channel of a mos device has small enough triangle assuming the channel is directly below a region named gate const mesh under region gate depth 0 5 max height 0 1 max width 0 25 Make sure all contacts have enough connecting point for simulation const mesh under mat aluminum depth 0 0001 max width 0 25 9 64 SILVACO International DevEdit Replaces Card ConstrainMesh Region lt n gt Material lt c gt Type lt c gt I iMaxAngle s en MaxRatio lt n gt MaxAdjacent lt n gt MaxHeight lt n gt Y MaxWidth lt n gt MinHeight lt n gt A 4 MinWidth lt n gt See Also IMPURE TY REP ANE MESH 9 13 6 CUT Cut out a strip from the device and join the two pieces together Syntax CUT X1 lt N gt X2 lt N gt Y1 lt N gt Y2 lt N gt AUTOMATIC
42. to explain how the information in a plot is being represented Each key 1s drawn in a default position in a plot that does not overlap with any other key These default positions can be changed however if necessary and you can even drag keys to any location in the window In an overlay plot a key applies to all levels since the data displayed on each level is the same An overlay plot also has its own level key to indicate the different levels in the plot 7 20 2 Types Of Keys In an overlay plot a key applies to all levels since the data displayed on each level is the same The following keys are available e Contours A contour plot key indicates the value range for a given color when filled contours are used and the value of a color if line contours are used Up to three of these keys may appear at once since a 2D plot may contain up to three sets of contours Contour keys show only whole integer values when the quantity is contoured on a log scale e Regions Regions can be displayed on 2D mesh plots and Cross section plots The region key shows region to color relationships Usually the regions are represented by the materials that they are made of and the key shows these materials and their colors e Graphs Whenever graph lines are drawn there is a graph key This indicates the different quantities shown by each graph line These appear for example 1n XY Graph plots and Cross Section plots e Stats A st
43. while any other value draws marks at the specified frequency e Log axis numbers When log axes are displayed on either XSection or XYGraph plots the way numbers are drawn depend on this item The number 3 1s used as an example 7 56 SILVACO International TonyPlot e Line widths This group of controls sets the thickness of the lines used to draw Graph Lines Edges 2D Mesh XSection Vectors Fonts and Cutline positions 1 represents normal thickness with 2 to 4 representing increasingly thicker lines 7 19 2 Plot Options Tonyplot Properties Category Plot options C Duplicate Structure only With display settings Min doping Actual Clip te 12 000000 Log of zero o Axis Precision 5 XFY plot ratio To window To data Plot Margins left 16 right 10 top 10 bottom 9 Wet Doping Absolute Apply Reset Dismiss BS Figure 7 35 Plot Options e Duplicate When a plot is duplicated the display settings may optionally be applied to the new plot This causes the new plot to look identical to the original If Structure Only is chosen a default display setting is used for the new plot e Minimum doping Doping concentrations can either be displayed to their actual minimum values choose Actual or to a specified value choose Clip to with the value in the text field indicating the minimum value at which doping is clipped e Axis Precision When required the axis ticks a
44. 0 2 e End X 1 e End Y 02 e Peak Concentration le 20 e Reference Value le 16 impurity value at surface of silicon e Rolloff High Y Rolloff Gaussian dist e Distance 1 distance to junction e Rolloff Both X Rolloff Error Function e Constant 0 1 7 Press Apply 9 56 Add Impurity Impurity Arsenic Color B Draw Mode Rectangle Line Circle Ring Start X 0 0000 Microns Start Y 0 2000 Microns End X 1 0000 Microns End Y 0 2000 Microns Peak Concentration 1e 20 Reference Value 1e 16 Join Function 7 Multiply Distance Y Rolloff 7 Gaussian Dist 0 3 Distance Error Function Dist 0 7 Rolloff Apply Cancel Figure 9 46 Upward Impurity Rolloff SILVACO International DevEdit Now you can create a mesh and save the file as a Silvaco Standard Structure File named example2 str perform steps in the Subsections Mesh Creation on page 9 15 and Saving The File on page 9 17 Figure 9 47 shows the net doping contours on the created device using TONYPLOT A cut line is made in the vertical direction shown in Figure 9 48 TonyPlot 2 6 4 DEVEDIT Data from example2 str Impurity Source Line 0 4 0 6 0 8 1 Microns amp SILVACO International Figure 9 47 Net Doping Contour on Created Device using TonyPlot SILVACO International 9 57 VWF Interactive Tools TonyPlot V2 6 4 Miew v Plot v Tools v Print
45. 1 Overview DEVEDIT is a device structure editor It can be used to generate a new mesh on an existing structure modify a device or create a device from scratch These devices can then be used by Silvaco 2 D and 3 D simulators DEVEDIT can be used through a Graphical User Interface GUI or as a simulator under DECKBUILD 9 1 1 The Problem A limitation of device simulators prior to DEVEDIT was inadequate or poor structure meshes A mesh containing too many obtuse triangles or an insufficient number of triangles too coarse a grid may provide an inaccurate result or no result at all A mesh containing too many triangles too fine a grid can result in excessive simulator processing time Since the time most simulators use grows geometrically with the number of triangles or grid points it is critical to keep the number of triangles down to a reasonable number Using simulators such as SSUPREMA to create non uniform meshes tend to be very time consuming and require a great deal of effort 9 1 2 The Solution DEVEDIT resolves these problems by allowing structures to be created or read into DEVEDIT in the form of Silvaco Standard Structure Files The mesh contained in the file can then be replaced using the MESHBUILD algorithm Refinement of the mesh is accomplished by setting parameters that describe critical areas or by simply pointing to the areas which require refinement In the process of creating a structure definition of a device can be
46. 10 25 A TN 10 22 Release Notes cccccccsseeceseecsseecceseceeeceseesseeeseeeeees 10 25 PRC SCAN ENT tcn 10 23 Zo mand Pal a a aa ar Eaa 10 23 lee desee PE PC C DER 4 32 Mesh See Mesh Creation Mesh Creation Base Mesh Parameters cortante vixi tque mes 9 45 A M ORE Mon re 9 45 Impurity Refinement AAR 9 45 Index 5 VWF Interactive Tools Mesh Constraints 9 45 MESH CONTROLS rara stadt Wiech eats 9 45 SAVN WEE 9 45 Mesh Creation Meshing Example 1 Manual Refine BOX i seen d et 9 17 MeSH GOnstTallls danois e os 9 16 Mesh Parameters tege EE 9 15 A A 9 15 Refine on Quantities e onte ir e eene a ciue eai dtd uada 9 15 Mesh Creation Meshing Example 2 Boundary Conditioning iu ao ku c uen oua oot Ru eade 9 22 Mesh ENT UE 9 25 Mesh Parameters cards 9 24 Refine on Quantities oooocccccconcnncoconnnncncncnnnonannnncnnnos 9 24 MeshBuild SD STRUCTURES sss aise pases sons E ENEN 9 44 ADAPTIVE MESHING asin diia 9 43 BOUNDARY CONDITIONING 9 41 Minucius e Tct 9 42 MESA CONSTRAINTS cua E 9 42 REFINEMENT arica eege 9 43 SIMAO pesas PS 9 44 mis ne EE 9 44 TENSOR er at uc ed eie ta de tek Cantus 9 44 WORK AREA RESIZING suits acaso intel ile 9 44 Misano eeepc ee 9 7 le cessio euis ac uuu M e oL LL MINE erie ee 9 8 Meer rer 9 45 MOS BUIG mec 9 41 Meshing Example 1 stewie aver dws cada 9 8 Meshing Example 2 eeben anidan Sege see 9 20 REMESHING ee ee ee 9 20 Meshing Display Meshing Example 2
47. 3 5 3 To run a trial DBINTERNAL creates a temporary infile with the name infile dbinternal temporary name pid name is the name of the machine and pid is the program ID of the DBINTERNAL program See also the log command The temporary file is a copy of the template file with different values on any set line that correspond to a parameter in the experiment command For instance if the template file had the lines set x set y 10 set z 15 and you ran the earlier sweep command the first temporary file would have the lines set x 1 set y 3 set z 15 DBINTERNAL will change the values for parameters it recognizes and leaves the other set lines alone DBINTERNAL then runs a trial by producing a child DECKBUILD with the command decokbustd tat lasecit nop lot run lt intade gt outtrle xrmntrlec out Once DECKBUILD is finished DBINTERNAL will parses the lt infile gt out file to find the values generated by the extract statements The lt infile gt and the lt infile gt out are then deleted This procedure creating an lt infile gt starting DECKBUILD examining the lt infile gt out is repeated for the remaining sets of parameters in the experiment SILVACO International B 5 VWF Interactive Tools B 5 DBinternal Commands DBINTERNAL commands are generally of the form command lt paraml gt lt valuel gt lt param2 gt lt value2 gt The commands and the parameters may be abbre
48. 3 R Tue Dec 2 01 59 58 PST 1997 MeshBuild Library based on MeshBuild v1 9 0 Copyright c 1991 Integrated Systems Laboratory ETH zurich Switzerland Executing on hast kokanee Tue Sug 18 17 12 14 1998 DevEdit Figure 9 13 Running DevEdit in Batch Mode within DeckBuild 2 We also recommend that you add the line structure outfile test str atthe end of the file to explicitly save the structure in a structure file SILVACO International 9 19 VWE Interactive Tools 9 4 3 EXAMPLE 2 REMESHING AN EXISTING STRUCTURE Loading The Structure Typically a structure is created in ATHENA and saved in a structure file For this tutorial an existing Silvaco example will be used Obtain Existing Structure Start DECKBUILD by entering deckbuild amp in a UNIX terminal window Right mouse click on Main Control then select Examples The DECKBUILD EXAMPLES library of examples is then displayed in a separate pop up menu Double click on MOS1 then double click again on moslex01 in Then click on Load example which loads the ATHENA ATLAS input deck into DECKBUILD which copies the structure and log files into the directory where you launched DECKBUILD In DEVEDIT left click on File the select Load Then highlight again with the mouse moslex01_0 str then click on Load File The ATHENA created structure is now in DEVEDIT DEVEDIT command files de are loaded in the same manner Figure 9 14 DevEdit Load File Menu S
49. 34 A scaling is applied to the vertices This movement 1s useful when one dimension of the structure has to be scale to see its details This happens when viewing very thin structures Automatic Movements You can rotate translate zoom and scale automatically by releasing the mouse button just before stopping the mouse for any of the above mentioned operations To enable automatic movements check the Automatic Movements box in the Mouse Interface See Mouse Section on page 38 for more information Note The bounding box will only appear if you activate it in the Struct Interface See Structure section on page 8 39 for more 8 8 information SILVACO International TonyPlot3D 8 4 Display Modes You can view or configure the display of the plot by using the Display Modes Window see Figure 8 3 To open the Display Modes Window select View Display In this window there are five different display modes Regions Contours Rays Isosurfaces and Vectors These display modes are all non exclusive To activate a display mode simply turn on its toggle button TonyPlotsD Display Modes Figure 8 3 Display Modes Window To further configure the appearance of the plot choose the Options button in the upper section of the Display Modes Window The Display Mode Options Dialog will appear with additional settings for each mode see the next subsections for more information on these settings Choose the tabs relevant to the
50. 4 23 After a few moments MASKVIEWS appears with the specified layout file loaded If you did not choose a layout file MASKVIEWS starts with no layout file loaded 4 34 SILVACO International DeckBuild y MaskViews Layout Files Directory tmp mnt writer hankm Filter lay manesi lay mvanexo lay ESL Tel Filename rivanex01 lay Start MaskView s Figure 4 22 MaskViews Layout Files Popup Loading a Cutline There are two ways to load a MASKVIEWS cutline from the MaskViews Cut Files popup and an alternative method at run time in the simulation deck To load from the popup select Tools gt MaskViews Cut files and either save a file from MASKVIEWS and load it into DECKBUILD or by use the drag and drop to drag the cutline directly from the MASKVIEWS previewer At runtime you can load a cutline file from the go simulator line To load a cutline file using the popup 1 Create and save a cutline file from MASKVIEWS See Chapter 10 MaskViews for more information on how to do this Typically the first time through MASKVIEWS would be started from DECKBUILD create or load a layout then interactively create a cutline and save it to a file For later use you can go straight to step 2 2 Bring up the MaskViews Cut Files popup Figure 4 23 and set Category to Disk Files the default Choose the cutline file name in the scrolling list If the file name does not appear you may need to change the directory an
51. 5 A Vale Intercept TOM Specialist did 5 33 5 5 6 Y Value Intercept for Specified A 5 33 5o ADS NEO WING 2 acad eer 5 34 5 5 8 Min Operator with Axis Intercept liliis 5 34 5 5 9 Max Operator with Axis Intercept 0 cc cece cee tet RII 5 34 5 5 10 Second Intercept Occurrence 00 cece ete mmn 5 34 5 51 Gradiebibal AXIS EE s eau ote Res teste Cod ean route E echte e EE 5 34 5 5 12 Axis Manipulation with Constants 0 0 0 0 ccc cece eee I 5 34 5 5 13 X Axis Interception of Line Created by Maxslope Operator 0 0 0 ccc ce eee eee eens 5 34 5 5 14 Y Axis Interception of Line Created by Minslope Operator 00 cece eee eee eens 5 35 5 5 15 Axis Manipulation Combined with Max and Abs Operators 0 00 cece eee eee eee ees 5 35 5 5 16 Axis Manipulation Combined with Y Value Intercept 0 cece eee eee eee ees 5 35 BREET 5 35 5 5 18 Data Format File Extract with X Limits 0 eect nnnm 5 35 5 5 19 Impurity Transform against Depth EE 5 35 5 5 MOS TC 5 96 57 Exiracted Hesulls 2 e Rut Vea nde donant op Vado oo Rone we adieu V ag DI 9 37 A bes ee 5 mu Basket eee EE IET US 5 37 DOr EXtlaCl Features asii AO AE 5 38 al a he aevi ata antt A a 5 38 582 Ee Ee EE 5 38 5 8 3 Min and Max Cutoff Values 0 ene RR 5 38 5 8 4 Multi Line Extract Statements 0 c ccc cece cent IR tenet I 5 39 5 8 5 Extraction and the Database VWF 0 0 cette III 5 39 5 9 QUICKBIP Old EE 5 40 5
52. 68 Phe Oe PUNGHOMG eatit ae E EE oe eee aie a a a a a 7 69 1 20 CAN n EE 7 70 T20 1 OVEVEW A A E 7 70 A O A ani Aorta ees 7 70 7 20 3 Positioning Key Boxes ou a A Ea ac oa RAS 7 70 EE Ee eege 7 71 21 Ihe Command KEE 7 72 SILVACO International Xi VWF Interactive Tools Ee Ann 7 72 Fel A EE 7 72 7 22 FUNCIONS acc ti ded fot 7 76 E EE Ree 7 76 222 DENNING FUNCION es add add da 7 76 EE E ee e E heck 7 76 7 224 RUCCI MACOS aoi we eub tt a dit sq TH UU eae es ead eas REM Eu eru sabre aes 7 77 2205 UNCHOMOVINAX EE 7 78 122 0 e ein RRE 7 79 1 23 USer Dala EEN 7 80 eS OVC OW sacra E eto arado dea wee Sack de cirios 7 80 720 2 Loading USE Dala IS 55 e ba 7 80 7 23 3 Creating User Data lOs ora da 7 80 SE RR tu EE 7 80 SEAMOS e Ee eee Vu tubae seu us hee ea eee Ae eer ee eee As 7 81 1 24 Set OI 7 82 CLAS cll EE EEN 7 82 242 LOA PC C UT 7 82 TRAS SOU SV EE 7 83 ee UC 7 84 17 25 I MaKIng ANOVA 252552 tuas 36 1a tase deh td Vevey eet DERE ED EHI S 7 84 1525 2 9p tud AM Vella s xe as doni arb E ede A pi hd eoi x aces 7 84 29 990 Vera COIN EE 7 84 bus MB I A EEN 7 84 12259 OCR ING Old EE 7 84 EN EE 7 85 Zs eli C as acd fase each A Ge 7 85 A A A 7 85 7 20 PIOGUCTION MOGG EE 7 86 O dE 7 86 125 2 Enabling Production due TEE 7 86 7 26 3 The Production Mode Ge EEN 7 86 126 4 Interactive RSM CONTO EE 7 87 1 265 ME MPU SIGNS of aco o e BA he td iip 7 87 1206 lr AION SIG geet tcp nod tac iiie bodies ibn eee ora 7 8
53. 7 Results 6 7 1 Overview An optimized results list is maintained by the OPTIMIZER to show the input parameter values and target results for each iteration To display the Results worksheet set the Optimizer s Mode to Results Figure 6 24 shows a typical Results worksheet y Deckbuild Optimizer optex02 in opt Mode Results Properties oem ms cx o er H implant dose implant energ etch pl dose energy 1 3 88411 25 0 7 346510 12 3 88411 25 906 i 3 88411 0 722196 3 88411 1 56625e 16 ques g 22e32e411 4 6005 0 532424 e 353378413 g 32321e 11 23 3048 0 535331 65 6261 3 32321e 11 23 3833 0 63633 B3 h2h1 err 0 47 o 3 32321e 11 23 3048 0636044 03 6261 err 0 0094 3 32321e 11 23 3048 0 63633 5 6055e 12 03 6261 err 0 45 o 3g 323218411 3 9045 0636331 B3 3107 errz0 3555 SE 3401428 11 23 3048 0 63633 B3 h2h1 err 0 91 Optimization completed Ok Max error within limit Figure 6 24 Results Worksheet The left column displays the iteration number starting from 1 The other columns display the input parameters from the Parameters worksheet followed by targets from the Targets worksheet Input parameter columns show the input parameter values used for each iteration Target columns show the extract values obtained for the parameter values or if a curved target the average error for the entire curve The Results worksheet is automatically updated at run time and a new row is added eve
54. ANGLE not seq E Ma A NLE 2al A Insulator Region 3 Aive Value Been ANG LE 179 MAX ANGLE 179 E MAX ANGLE not set B Other Region 4 Acive Value TW ae ANGLE 120 MAXANGLE mee MAXAMOLE 120 o Figure 9 49 Constraint Hierarchy Parameters GLOBAL sets global constraints The global constraints is also if region and material type are NOT used REGION ID lt n gt REG specifies which region by region id number these constraints apply to Several region parameters can be set at the same time REGION NAME lt c gt REG specifies which region by name these constraints apply to Several region parameters can be set at the same time MATERIAL TYPE lt c gt MAT TYPE TYPE Specifies what material types these constraints apply to Values can be Semiconductor Metal Insulator Other xl lt N gt yl lt N gt x2 lt N gt y2 lt N gt The four corners of a rectangular area to which the following constrains will apply UNDER REGION lt C gt gt In the semiconductor region under this region a rectangle is defined from the surface to the depth specified using the depth parameter If the region is disjoint multiple rectangles can be formed UNDER MATERIAL lt C gt In the semiconductor region under regions of this material a rectangle is defined from the surface to the depth specified using the depth parameter If multiple regions are made of the same material multiple rectangles can be formed Valu
55. C SR Se PURER BEE ERE RB ERE EE ERE EE EE EEE REET ber is E 4 ts A E hh d Hn h Jd n ES dus Hh AMD h 1 Gecke An SE EE Tr ch ee ae 2 M El wel 2 E vw ES m Qv ae SS cae aad Eee 1 Set 11 Ost o B um a imb are P sinner m Min EE Br E Hi ir HE ERRER in gs HEE d ie SS E EE HAREE 4 GER rang Us E BEER d Mat HH HE uU RH 3 1 Tore EE quee EE oH SE EE GE 5 B EE EHE ES EE SE SCH E GE SS BBR T HESE ER FRE HE a H et T ina ds Sa vid st Structure EI S E E GN HHI rund bun KERR EEER Enn H Hus puru iy ue Ce Cup T EL POE MN dcus ge GT dues eid e EHI Serie hi HEE B BH RH HE E EE nie aiu ia m z Figure 9 22 DevEdit File Saving Menu Batch Mode The goal of DEVEDIT in batch mode for this case is to automate DEVEDIT s mesh creation algorithm using user defined parameters without the steps of manual regridding Therefore you can make minor changes of the process simulation without requiring you to complete the steps of DEVEDIT in GUI mode since the criteria used in DEVEDIT such as mesh constraints in material layers refined grid along p n junctions loose grid deep in the substrat are general and would be valid for similar devices of minor process changes Hence this purpose for batch mode is different than in Example 1 In this example the initial structure was created in ATHENA Device simulation would be performed in ATLAS This examp
56. Change the Depth y and Length x minimum and maximum can be set to desired values For this tutorial set y min to 0 05 y max to 0 5 x min to zero and x max to 4 5 press Return after typing each value Click on Apply Careful choice of the device in the coordinate system can prevent confusion at later stages Note After entering values into the text boxes in DEVEDIT press Return for the value to be accepted 9 8 SILVACO International DevEdit Figure 9 3 Resize Work Area Menu Defining Regions Adding a Region Creating a device begins with adding regions Each region consists of one material although an area of a single material can consist of more than one region Under the Regions pull down menu choose Add region The menu on the right of DEVEDIT changes with the title Add Region DEVEDIT allows for geometrical shapes to be created using the mouse or by typing the coordinates of the region To begin create the entire AlGaAs substrate region Using the Mouse Use the left mouse button and click on the location 0 0 05 noting that the location of the mouse is displayed in the X and Y locators Continue to choose the points 4 5 0 05 4 5 0 5 0 0 5 If a mistake was made in the locations of the points press the middle mouse button to remove the point Using the Keyboard Alternatively type the X and Y locations of each point in the bottom of the right panel and press return after each number and then cli
57. Colors Tab 8 6 3 Fonts This tab Figure 8 25 can be used to change the fonts used in plots TonyPlot3D Properties adobe hel vetica bol d r nol adobe hel vetica bol d r nol adobe hel vetica bol d r nol Figure 8 25 Fonts Tab SILVACO International 8 35 VWF Interactive Tools 8 6 4 Legend This tab Figure 8 26 can be used to adjust the settings of the legends Contours and Regions Note The Height adjustment only pertains to the Contours Legend TonyPlot3D Properties ea o Ll MEM Figure 8 26 Legend Tab 8 36 SILVACO International TonyPlot3D 8 6 5 Lights The light sources in this tab Figure 8 27 are used to illuminate the scene In this tab you can toggle the lights themselves Light 1 and Light 2 change the color of the lights and modify their intensity The directional light sources are described by latitude vertical and longitude horizontal TonyPlot3D Properties Figure 8 27 Lights Tab SILVACO International 8 37 VWF Interactive Tools 8 6 6 Mouse This tab Figure 8 28 can be used to adjust the mouse buttons settings See Section 8 3 4 Plot Control Using the Mouse for a description of these functions Automatic Movements controls whether the structure will move automatically or not when you release one of the mouse buttons while still dragging the mouse TonyPlot3D Properties pos Struct GE Colors Fonts Legend Lights Figur
58. DECKBUILD automatically detects if the caret is in the middle of a line and moves it if necessary For more information see Section 4 5 Main Control Build the entire process deck by invoking the popups as needed from the Commands menu setting the controls and writing the deck a popup at a time You can also parse the deck That is read a line or lines of syntax from the deck and automatically configure the correct popup s For more information see Section 4 7 2 Parsing the Deck 4 7 4 Mercury Tool For the MERCURY simulator the Commands menu provides a single button to start the external MERCURY TooL application This interface tool provides the ability to create and modify MERCURY simulation decks with ease For more information about this interface see the MERCURY USER S MANUAL 4 7 5 Clever DECKBUILD also provides a set of command popups for CLEVER and EXACT products For more information see the CLEVER or EXACT USER S MANUALS 4 32 SILVACO International DeckBuild 4 8 Tools DECKBUILD s Tools menu provides the interface to other VWF INTERACTIVE TOOLS TONYPLOT MASKVIEWS and MANAGER Figure 4 20 In addition there is a general Text Editor for viewing other files such as external simulation decks executed by a source statement see Section 4 16 13 SOURCE from within the current deck Deckbuild V3 10 5 A NONE dir main mrhappy marting work test deckbuild Y MaskViews rp Text Editor Manag
59. Dismiss Select number 1 A Make movie Shift position Figure 7 23 Cutline Tool SILVACO International TonyPlot Creating To create a cutline select one of the Create options and follow the actions specific to the mode to define the cross section Note While dragging holding down the SHIFT key causes the start point to move as well as the end point Free To define a free cutline drag the mouse over the source plot to define a line through the mesh Releasing the mouse button creates the cross section e Vertical Same as free but dragging is restricted to a vertical direction Release the mouse button to create the cross section e Horizontal Same as free but dragging is restricted to a horizontal direction Release the mouse button to create the cross section Chained To create a chained cutline click on the mouse SELECT button in various places to create a polygon of chain line segments To erase to last point placed use the ADJUST button Press the Return key to create the cross section e Interface To create this type of cutline click on the mouse SELECT button to place two points on any interface region boundary Click on ADJUST to erase to last point placed and Return to see the portion of the interface along which the cross section is calculated If the portion is wrong press t to try other routes When ready to create to cross section press the Return key once more e Ke
60. E E 8 39 EIERE 8 40 8 7 1 SunOS 5 x UltraSPARC and SPARCstations 8 40 8 7 2 AP 9000 7 OC Workstation is rebatir rp DI dede 8 40 8 7 3 Linux RedHat PC Compatibles 0 0 ccc ence IRR teen III 8 41 8 7 4 Windows NT 2000 XP PC Compatibles 00 0 0c ccc RR IB 8 42 Chapter 9 TN capiunt acne arcana senti ados wende do dius weak EE 9 1 AO Wise ad x aL anode arat qi di Aw e au euni ioa qe dad 9 1 S ase Ee NEE 9 1 Aa o A 9 1 913 When to Use DevEd os cars da EE 9 1 OA When Notio Use A AAA AA 9 1 EE AE SERA E ee EE Ee E See ee 9 2 So AO einen aiaa aaa aa aaa a a a aaa 9 3 9 2 1 Layout and Functionality EE 9 3 a CONTOR aE e earar E EE dE keier 9 4 929 Main Panel CONTO SS EE 9 4 972 ASCONTO ie e CEET 9 4 93 FIELE CONTROLE e e e e 9 5 93A USING Devesa os 9 5 9 3 2 Loading a Silvaco Standard Structure File 9 5 9 3 3 Saving a Silvaco Standard Structure Pie 9 5 9 3 4 Difference Silvaco Standard vs Devedit 0 0 ccc eee RI 9 5 9 3 5 EOACING a COMME ds ES ci 9 6 230 Default Fes anton rodea das acto we sa eee pelos Deia Deo eee eee eee es 9 6 S a Tu 9 7 9 4 1 Goal And Purpose Of Creating A New Mech 9 7 9 4 2 EXAMPLE 1 CREATE A NEW STRUCTURE 0 0 0 RR RRRRRRR RR 9 8 9 4 3 EXAMPLE 2 REMESHING AN EXISTING STRUCTURE 0 0 00 cc eee RIRR 9 20 9 4 4 Advanced Features EEN 9 29 OS STRUCTURE EECH Neier EE dt 9 34 9 5 NOV CI VIGW ee ee dene A have eet AE mat 9 34 SILVACO International xiii
61. Forms e Ee sonani Adding Printers to TonyPlot c ceeeeeeeeeeeeeeeeeeeeeeeneees A lte A O Nar err ee ae SILVACO International A e ER 7 51 MOIS ee ee ee 7 49 Weeer 7 52 eu cq ee 7 52 Seting PHATOPUCNS tral id 7 54 System Configuration EE 7 52 See also Printing Editor and TonyPlot Process Extraction TAOS MT 5 5 Entering Statements ooncccccnncccccnncccocnncnocononnnnnnnnnnnnnonos 5 4 A O 5 21 Process Extraction Examples 1D Material Region Boundary occccccoccccccnccccnnconanccncnnnnnos 5 24 1D Max Min Concentration 5 23 2D Concentration AMECA cs 5 24 2D Concentration File eeeeenn e 5 24 2D Material Region Boundary seeeseeesssssss 5 24 2D Max Min Concentration 5 23 2D Maximum Concentration File eese 5 24 SPEC OPON M pL 5 28 sitios ipse wr ect THEN 5 28 Electrical Concentration Curve mos cae 5 28 Junction Breakdown Curve 5 26 Junction Capacitance Curve eeeeeseeeeereeene 5 25 A A 5 21 Material THICKNESS ideas acude 5 21 QUICKMOS 1D Vt eeeseeernR mH 5 22 QUICKMOS CV Cure EE 5 25 Sheet Conductance esesee enne 5 22 Sheet E Le 5 22 Sheet Resistance Conductance Bias Curves 5 27 SIMS GUN Got 2 ean oe erent eect E 5 26 SRE E 5 27 Surface Concentration ocooccccccccccncncncconinanincnnnccnana nacos 5 21 Process Flow Editor See also Advanc
62. If no name is given and delete is not specified a new name in the form NewProfile000 is used There are a limited set of names that should not be used See the impurity card for more details DELETE Delete the profile identified by the name parameter IMPURITY lt c gt Specified which impurity this profile is describing imp e Boron Arsenic Potential etc See Generic Parameters for a more complete description FILE NAME lt c gt File name of a SUPREMS3 or a 1 D SUPREMA Silvaco Standard Structure file The selected impurity is extracted infile and the distance from the surface of the semiconductor inf and the value at that location are stored Only the data points in the semiconductor are stored DATA POINT lt POINT_2D gt Each data point consists of a distance from d pthe peak value surface and the value concentration at that location Examples Load an arsenic profile from a suprem3 file profile file suprem3 str name Arsensic Profile imp arsenic Make a phosphorous profile profile name PhosProfile imp phosphorous d p 0 7e19 d p 0 2 1e20 d p 1 1e19 d p 2 1e18 d p 23 1e17 delete the arsenic profile delete name Arsensic Profile Replaces Card Profile Name lt c gt Impurity lt impurity gt FileName lt c gt DataPormteepormn 2 1 See Also IMPURITY 9 76 SILVACO International DevEdit 9 13 17 QUIT Exit DEVEDIT or end reading file Syntax BYE ENDyBXALT gt S QU LE Descripti
63. InGaAs layer 1s added This step 1s performed in a similar way to adding a region except the location is being etched from existing material the AlGaAs substrate The default setting for Add Mode is Etch then Add meaning the new region displaces or overwrites any existing material region The other mode Add Only adds a new region only where no other region has been defined Add an InGaAs region from 0 0 084 4 5 0 084 4 5 0 098 and 0 0 098 The precision of these coordinates exceeds the default of the mouse setting You have two options either enter the coordinates of each point and click Add after each point or use the mouse first to select approximate locations then select the points in the Polygon box and edit the points click Replace after each point Set the doping to 5e15 donor concentration EE Figure 9 7 Etching then Adding a Region Overwriting a Material in an Existing Area 9 12 SILVACO International DevEdit Add Electrodes The last regions to add are the electrodes In ATLAS only the boundary of an electrode contacting the semiconductor is considered hence the height of the electrode and the mesh inside of the electrode are of little consequence Add a gold region at 1 7 0 2 3 0 2 3 0 05 1 7 0 05 In order to identify this region as an electrode click on the button next to Electrode then use the right mouse button to click Electrode names and choose gate Figure 9 8 Addin
64. International All rights reserved MOS Module enabled BIP Module disabled JFET Module disabled Diode Module disabled GAAS Module disabled Fitting Routines enabled Local Optimization enabled Global Optimization enabled Simulation enabled Baal 29 6 25 30 1994 Executing on host elvis UTMOST gt SILVACO International 4 51 VWF Interactive Tools UTMOST gt load UTMOST model file UTMOST gt model bsim3_pmos SETUP FILE LOADED Version number 66 UTMOST gt UTMOST gt set value for TOX UTMOST gt set tox in m Stox 1 0e 10 UTMOST gt device TOX 1 79e 08 UTMOST gt UTMOST gt define device specifications UTMOST gt setup width 1 0 length 0 6 polarity P UTMOST gt MOST gt load Atlas log files UTMOST gt init inf IdVg Vb log master UTMOST LTATE nr IdVd Vo log master append UTMOST gt Log file loaded UTMOST gt select required characteristics for device UTMOST gt deselect ID VG VB all UTMOST gt select ID VG VB device 1 UTMOST gt deselect ID VD VG all UTMOSI select ID VD VG device 1 UTMOST UTMOST log outf mos log utmost UTMOST gt UTMOST gt perform simulation UTMOST gt fit ID VG VB Please wait FITTING in progress Executing local optimization ivgs bsims a Executing local optimization ivgs bsim3 a UTMOST gt fit ID VD VG Please wait FITTING in progress Executing local optimization ivds bsim3 a Executing local optimization ivds bsim3 a UTMOST gt UTMOST gt output UTMOST parameters fo
65. Kyle LEE 9 21 A 9 21 LO a don e os Mo rd taro Sees 9 21 Meshing Example 1 Bening zl 9 9 ADUNO sarria 9 13 Mes Crealo cm 9 15 Saving Mesh FICS ete a aS 9 17 ei 9 8 Meshing Example 2 Advanced Features ee ee 9 29 Ne 9 21 Loading the Structure cccccssscecceeseeeeceesseeeeeeeseeeseeees 9 20 Mesh Creation eege ee 9 22 Obtain existing structure 9 20 Saving Mesh Files cscccccsssseececeeseeecesseeeceeseeeeeseees 9 27 Structure editing 32a acs aware c ee sica da eu Rupee Os 9 20 suni erc 9 33 Mies sino Rm 7 67 MOS Device Tests io ha eon re e ES Sieg 5 36 A 7 39 N Networked EXECUTION E 1 8 See also Advanced Features Automation Tools Index 6 0 Object Editor Hierarchy Structure occccccocccncocnonnonconnocononcnnnoncnonannnnonnnos 8 21 Mouse Action ie del LE 8 22 Right Mouse Menus REENEN 8 23 Objects EANO a 10 12 See also Mask Editing Nd 10 9 EIERE 10 10 le EE 10 10 BERT 10 10 A t 1 8 See also Advanced Features Automation Tools edu ca ola cial 1 4 4 3 6 1 B aa 6 1 22119 EE 6 26 o A 6 21 Optimization d e 6 3 Optimization Kl te 6 30 Optimizer REESEN 6 2 Ru 6 4 ll 6 28 eege 6 23 Uds 6 20 dioc PC 6 12 Insee 6 1 Worksheet QING seria ario 6 24 Optimizer Parameter NIT 6 10 O 6 7 Optimizer Parameter Editing Vulle 6 7 Parameter NaMe aid du eia eds ue tat UE dou 6 8 RESPONSE TYDE anidar coda 6 7 Optimizer Parameters ROGINO Mee TT 6 4 A A 6 10 Delen eses 6 6 Ehabling Disabling 22 5 uaa c
66. LDD MOS transistor is essentially complete Before continuing on to device simulation you will use DECKBUILD s EXTRACT capability to determine some parameters related to the structure See also Chapter 5 DeckBuild Extract Before proceeding to the parameter extraction statements it is a good idea to remind yourself of the present form of the simulated structure Figure 2 21 0 1 0 2 0 3 UA 0 5 0 6 0 7 O 0 1 0 2 0 3 UA Figure 2 21 The Material Regions and Net Doping Contours of the Simulated Structure The following parameters that are extracted in the example input deck are e The source drain junction depth e The device threshold voltage e Conductance vs bias e Some sheet resistances e The channel surface impurity concentration Source Drain Junction Depth In order to extract the junction depth correctly the extract system needs the following information e The name assigned to the extracted parameter In this case the parameter is named nx j e The name of the parameter to extract In this case it is the junction depth that extract refers to as Xj e The material containing the junction In this case the material is Silicon In more complicated simulations you can create structures with stacked layers of different materials each of which may contain junctions e The layer occurrence number After specifying that you are interested in the junctions in Silicon material you have to specify which of
67. Orientation Thickness um 4 00 0 00 emm R 5 010 Grid specification wi Total number of grid layers 800 1 Mpininal grii sparing umb 01 L Grid spacins cation umb GG Minimum gold spacing umb GECI hog i O Antimony Li Arsenis Lo O prp Zi O Phosphorus 10 Comment Figure 4 3 SSUPREMS3 Initialize Popup Choose the material orientation thickness and grid layers by using the pointer and mouse buttons The default values of these controls have been chosen so that in many cases it is unnecessary to change the value of every control on the popup Just change the values needed Use lists of items such as Material by clicking MENU while the pointer is over the square box A list of materials resembling a menu appears Move the pointer over the desired material and then release MENU to activate it Change the value of Thickness by clicking and holding SELECT with the pointer in the small grey slider box then dragging the box left or right Release SELECT when done Notice that as the thickness is changed the grid layers slider automatically follows along to maintain a constant thickness per grid layer ratio If you not satisfied with the number of layers change it after the thickness is set Choose the Orientation by clicking SELECT over the desired orientation value The box containing the value will be indented To specify an initial impurity click SELECT in the checkbox to the left of the impurity The impur
68. P DVT1 param DVT1 param UA DeckBuild Kier cm sec 1 V ohm m 3 4 53 VWF Interactive Tools 4 54 P UA 6 04895e 10 m V EXTRACT extract name P UB param UB P UB 1e 22 m V 2 EXTRACT extract name P UC param UC POUCS 0 0253119 17V EXTRACT extract name P VSAT param VSAT P VSAT 5 8867e 06 cm sec EXTRACT extract name P A0 param A0 P A0 0 528582 EXTRACT extract name P A1 param A PSAT 0 0939283 LIV EXTRACT gt extract name P A2 param A2 PSAZ 0407 1017 EXTRACT gt extract name P RDSW param RDSW P RDSW 800 ohm m 3 EXTRACT gt extract name P VOFF param VOFF P VOFF 0 0139744 V EXTRACT extract name P NFACTOR param NFACTOR P NFACTOR 1 39744 EXTRACT extract name P PCLM param PCLM P PCLM 5 70022 EXTRACT extract name P PDIBL1 param PDIBL1 P PDIBLI 0 0545063 EXTRACT extract name P PDIBL2 param PDIBL2 P PDIBLZ 0 0610935 EXTRACT extract name P DROUT param DROUT P DROUT 0 146054 EXTRACT extract name P PSCBE1 param PSCBEI P PSCBE1 9 97005e 09 V m EXTRACT extract name P PSCBE2 param PSCBE2 P PSCBE2 1e 09 V m EXTRACT extract name P TOX param TOX P TOX 1 79e 08 m EXTRACT extract name P XJ param XJ P XJ 1 5e 07 m EXTRACT extract name P U0 param U0 P U0 213 46 cm 2 V sec SILVACO International DeckBuild EXTRACT extract name P ETA param ETA ES EXTRACT gt extract name P Ilinm P Ilinm 2 0
69. RO EES 9 45 O10 Ku len EE 9 45 9 10 2 Base Mesh Parameters 0 0 ccc cc cee mH Hmmm rn 9 45 O10 See MING OM IMPUMUCS 3 ace eege Gne tcu E agir acuto oe Ped Meee ae Dat 9 45 9 10 4 AE E CEET 9 45 A ale WEE 9 45 9 10 6 Saving the Silvaco Standard Structure Pie 9 45 O O A RO OR ER 9 46 9 11 1 Viewing Mueller 9 46 9 11 2 mpu DEMO cotarro 9 46 9 11 3 Impurities Loaded From A Structure 0 ccc eect IRR 9 46 OG Ada PU le EE 9 46 9 11 5 Defining An Impurity Source Area 9 47 9 11 6 Defining Impurity Roll off Direction 0 0 0 cece cee RII 9 47 9 2 ROBEESOFF FUNCTION gege cue arret A ede om no e irai e A rit 9 51 9 12 Aaltie FUNCION EE 9 51 O12 2 OODING e TEE 9 53 912 JOM UNCC CM ec a ese heen te ibid de hance prete eege r 9 54 9 12 4 Deleting Impurities ee et EE 9 55 9 12 5 Edid ITDUNTUBS EE 9 55 9 12 6 Combining Impurity Rolloffs lisse RII 9 55 9 19 STATEMENTS eege x ADAL C Het ER ANO IRI cR o RR AR CROIRE 9 59 xS I EE 9 59 9 13 2 Cards And Parameters disse utes aia b e a eRe MER rei eet ee Tu a Capa e C es 9 59 91 BASE e i ee E E deditio rins defi pn darse ds Bestes tuus UBI BUS Bec ee 9 60 SILVACO International Table of Contents 9 13 4 BOUNDARY CONDITIONING 0 cern HIR 9 60 9139 ON SIA RRE DEE 9 62 O O ED 9 65 ADE OS Matas a EE 9 65 A O EE 9 66 A A ON 9 67 US MOS IMPALA AE lr EE 9 71 AN AANTAL EE 9 72 SE e hte td eave O A IAN 9 73 TME See e ads o caian clas 9 73 A O A d
70. SILVACO International 9 87 VWF Interactive Tools Default imp refine Impurity Full Name Abbreviations nM E E pecu lie O H Re WEE Preferred ee ee eee po IP SS HEENMENM A AA o Lm A BEEN NENNEN BEEN p p Se o NetDoping Net Doping net dop on buit abs net dop s Les ro AbsNetDoping Abs Net Doping Charge Concentration Carrier Concentration s Recombination Rate H D D UI n 9 88 SILVACO International DevEdit Default imp refine Impurity Full Name dam purity Abbreviations Transition Value X Dir Electric Fieldqd Preferred Y Dir Electric Fieldqd Z Dir Electric Field Elec Temperature Semiconductor temp Hole temp gradient Electron temp grad pf Linear 1 ENCTIMNSTO Cone DO Aluminium conc Indium conc Gallium omnc 1 0e 10 SC SS oo l E EE HEET QFL Gradient X comp aum OREL Gradient Y oomp pf Diner Norm Intensity eG NO Grad gms a NENNEN WEO Gel DOP ime Net Active Doping lo tACLiV Phosph s act phos g dee ER Active Antimony act antim log 106 70 SILVACO International 9 89 VWF Interactive Tools Default imp refine Transition Value Impurity Full Name Preferred Abbreviations Semi Fixed Charge MEE log Slow State Density MEE log
71. Select all plots This item provides an easy way to apply an operation to all plots in the view All plots become selected regardless of their previous state This item is only active when one or more plots are loaded e Swap two plots This item permits the ordering of plots in the view to be changed by swapping the positions of any two selected plots It is most useful in the Palette Display Mode see the Properties section e Make overlay Overlay plots are comprised of several structures drawn in one subwindow They are created by selecting a group of plots in the current view and then choosing this menu item A new plot is created with the structures overlayed One of TONYPLOT s properties controls whether the original plots remain in tact or are deleted This item is only active when at least two plots are selected Refer to the Overlay section for a more detailed description e Split overlay This option breaks an overlay plot up into separate single level plots This item is only active when at least one overlay plot is selected Previous Page Next Page When the Main Window layout is set to Page mode see Properties then these two options become available They cause the currently displayed plot page to be replaced with the previous or next page respectively wrapping around at the first and last page Duplicate selected All selected plots are duplicated if this is chosen For each one a new window is created and the structur
72. Stack Horizontal X Axis Fit Exponential image defocus expose dose CD_bot_A Reset Dismiss Figure 7 19 Statisitics Popup Statistics plots can be one of several distinct types the current type is shown at the top of the popup and can be changed to any other type For each type a different set of control appears beneath on the lower portion of the popup The types available are Histogram Pie Chart Scatter Plot Box Plot and Sunray Plot Each is explained further in the following paragraphs Note Some features of statistics plots are incomplete There may be control items on the Display popup that are neither active nor documented These items control incomplete features and show some functionality that will be available in a future update of TONYPLOT 7 13 1 Histograms X Axis One or more quantities can be plotted on a histogram plot Choose the quantities desired from the scrolling list to the right Stack When more than one quantity is plotted the stack item selects the method used for showing each one on the same axis the bars for each quantity can be stacked vertically on top of each other of horizontally next to each other Fit This item allows a best guess distribution curve to be plotted over the data TONYPLOT uses the range mean and standard deviation of the data to generate a distribution curve of the chosen type SILVACO International 7 31 VWF Interactive Tools Show The ic
73. The Ruler shows useful data such as length gradient and intercepts of a line you defined This item 1s only active when at least one plot is selected e Probe The Probe tool is used to examine a structure at spot locations It provides both geometry and impurity data and can also be used to find specified structural features This item is only active when at least one 2D Mesh plot is selected SILVACO International 7 9 VWF Interactive Tools e Movie The Movie tool combines a group of plots into an animated sequence and provides a collection of playback controls such as speed direction frame advance and so on This item is only active when at least two plots are selected e HP4145 This tool provides TONYPLOT with HP4145 emulation capabilities The controls are designed to resemble those on a standard HP4145 including their operation This item is only active when a single Graph plot 1s selected Integrate One dimensional cross section profiles can be used with this Integration tool which calculates areas under a profile between specified x limits This item is only active when a single Cross Section plot is selected e Trace path When a structure contains vector information tracers can be placed within the structure These will follow the path of the vectors and can trace out flow lines e Poisson Solver The built in Poisson solver 7 3 6 Print Menu The Print menu provides all the necessary control for creating hard co
74. The history function works in the following way After each meaningful process simulation step Ge when a change to the structure has occured a simulator state file will be automatically saved in the current working directory The history files are named automatically as historynn str where nn is a sequence number The history files are stored as Standard Structure files As ATHENA was executing you may have noticed the commands to save these files at the ATHENA prompt For example struct o tfile history09 str DECKBUILD remembers which files are associated with each command as long as commands have not been not added deleted or changed since the history files were created You can also highlight the history structure file name and click on Tools in DECKBUILD which starts TONYPLOT and displays the history file To re initialize the simulator to the previously simulated Well Drive step double or triple click on the diffusion line for the Well Drive so that it is highlighted as shown in Figure 2 10 HN wa1 implant nat shown H H welldrive starts here n ffus time 50 temp 1000 t rate 4 000 drva2 p diffus time 220 temp 1200 nitro press 1 H diffus time 90 temp 1200 t rate 4 444 nitro press 1 Figure 2 10 Reinitializing the Simulator With at least some of the text on this line highlighted select the init button on the DECKBUILD control panel This resets the position of the current simulation line to the end of the W
75. User Defined Doping Profiles control panel 1s displayed on the right side of the screen The top list shows the doping profiles already read into DEVEDIT Below is information about the selected doping profile The name and impurity type can be changed in this area To read in a SSUPREMS structure file or a 1 D ATHENA structure file click on the Load File button A popup window appears Select a file and load it A popup notice is then be displayed asking which impurity you wishes to load from that file Now the profile is loaded and given the name NewProfile001 or NewProfile 002 or the first new not already in use Note If the impurity selected is active antimony active arsenic active boron or active phosphorus DevEdit will store these as antimony arsenic boron or phosphorus respectively SILVACO International 9 53 VWF Interactive Tools Back in the User Defined Doping Profiles command panel this profile is added to the User defined profiles list and becomes the selected item Details about this profile are displayed below the list You can now rename the profile Replace the name in the Profile Name field with the desired name Be careful not to accidentally use a name that already exists in the list You can now click on Done to remove the User Defined Doping Profiles command panel This doping profile has now been added to the possible rolloff functions in the Add Impurity panel and the Modify Impur
76. YL lt N gt Y2 lt N gt STRETCH VALUE lt N gt LENGTH lt N gt 9 80 SILVACO International DevEdit Description Stretch provides many ways to make the device longer or taller or even narrower or shorter There are many parameters that can be used in many combinations however most of these parameters are only for the most advanced user Most users should be able to look at the first five 5 examples below and learn all they need about stretch Stretch allows a vertical or horizontal line to be stretched out a specified amount or allows a range to be evenly stretched The line to be stretched can be a specific location x21 Alternatively the line can be the center of a region specified by the region s name id or material If a line is to be stretched into an area the width of the new area must be supplied A stretch value can be supplied to specify a new length Alternatively a new length can be determined for the specified region That is the amount stretched equals the desired length minus the original length of the region To stretch an area to cover an even larger area an area can be specified by region name region id material name x1 x2 pair or an yl y2 pair If a region is specified the center option must be set to false This area can be given a new length using length or an extra amount using stretch value to be added to the length Length and stretch value are normally assumed to apply to the x direction un
77. a E a E 7 37 AWC ee ee ee ee ee ee ee ee ee eee ee 7 38 TNO MWe LEE EE 7 38 T102 NAN EE 7 40 alone is diro CT m 7 41 A a E 7 42 TOGO Sol al eee Ee Ree ee eee oe E ee Rad eee ca uii rad eee oe RAES REN 7 43 A10 ln TE LEE 7 44 JA CX EMERICUS EE 1 46 110 0 POISSON OPIO eri ds dilaci n 7 47 AT i I ECT EE ITI QI I aoe e E 7 49 TARO DINSA AE AE e 7 49 A AAA e pde Qi r eee netted totic tes 7 50 TITS AE ie sos cs baee ie or aut hag aed qtto i bu alas iaa 7 51 EH EIER pr CT oes ia cine eed bad nant eee he ereecht 7 52 1 175 QUEUES and PIMES a Pax p EE M RP RO oe ARE OE Sees 7 52 7 17 6 System COMMU loft Sree bar Sede ade Sy edie ent aha We wa dee e eb Sede ea tee see Beck 7 52 Td dangers WO LOBVEIOE ao actas Seabee o daa bide beeen E rat a vd easel 7 52 717S Adding Felis TO ON Os Ee E Mealtime hires teres ee ts 7 53 LATI SChnINGIPHNUODUONS Ee EE 7 54 1 16 Printer DIVels taa MER OE ee aa ee eae ACE qo ae Mae aoe eA 7 55 Fee 7 55 19 POD MOS cr aros 7 56 Le LR RI WI OPUS te ds n edet eo ou aeu NA ciao Rede Sa c ER 7 56 2 OW PHONG EE 7 57 ek SEU RU epo EE EE 7 58 roe WOOO ge EE 7 59 nts uc c ee Ee ted OAL eee AEN 7 60 A SA aa e a e a a a a 7 61 AOT OWUC AA EE 7 62 3 19 0 SEU COOS aise crud EE ee 7 63 7 19 9 Sequence Marks veto aeu ded tuti Sor d e ce AE A eo EE AE Een AS 7 64 AO One OO UO M EH 7 64 TAS ENON Oee ees Er O r EE 7 65 1 9 12 tas nr be LLL E i P r d ae a See 7 66 19 T9 SC NUS ds dico 7 67 A A O iere eet aoe Cute ato 7
78. a specific printer to the list or when the lpstat service is unavailable 7 50 SILVACO International TonyPlot Controls The following controls are available Name The name of the printer This can be any string but each printer must have a unique name Queue This item shows all the printer queues that TONYPLoT found in the printer file Select the queue to which the printer is attached If the queue is not present it is necessary to print to files rather than direct to the printer The files can be sent to the printer manually at a later time Type This shows the type of information that the printer understands Select the format desired Note that some formats are suitable only for printing to a file as no printer supports those formats For example PCX format is an image file format and not really a printer input format DPI Indicated the dots per inch resolution of the printer This is not used for all printers Color Selects whether the printer produces black and white monochrome images only or whether it supports color The Load Defaults and Save Defaults buttons exist so that the printers in the printer editor can be retrieved between sessions 7 17 3 Form Editor The Form Editor performs a similar function to the Printer Editor but stores page layout rather that printer details All page layouts known to TONYPLOT are shown in the list on the Form Editor popup Figure 7 33 Tonyplot Form Editor
79. accomplished by simply drawing it on the screen DEVEDIT can also perform analytic implants using built in equations or cut lines from other simulators Constraints are then placed on the mesh to describe the critical areas of the device 9 1 3 When to Use DevEdit Use DEVEDIT when you want to perform the following operations Define a device interactively on the screen for subsequent device or process simulations e Remesh a device structure between process simulation and device test simulations when the process simulator does not create a good grid for the device simulator e Remesh a device structure during a process or device simulation when the mesh is no longer adequate for the next simulation step 9 1 4 When Not to Use DevEdit You should not use DEVEDIT to perform the following operations e Replacing numerical process simulations where accuracy is required e Meshing 1D device structures SILVACO International 9 1 VWF Interactive Tools 9 1 5 Getting Started DEVEDIT can be run from the UNIX prompt or from DECKBUILD There are two file types which DEVEDIT can read Silvaco standard structure file format common to all Silvaco simulators and command format a list of DEVEDIT commands which create a structure The structure file format contains such information as triangles impurity values borders etc The command format in normally used when starting a device mesh from scratch It contains the list of instructions
80. achieve that goal e Yield Analysis This can predict the characteristics of output yield from a production situation from known experimental data of the following input parameters Each of the following options provide access to the various parameter editing popups that are used in Production Mode These options are also available from the main Production popup as well e Input parameter ranges Input distributions e SPC limits Experimental results Optimizer setup ASA setup 7 10 SILVACO International TonyPlot 7 3 8 Properties Menu You can alter many of the default actions features and parameters in TONYPLOT to suit your preferences The Properties menu shows a list of all the categories of properties that exist For a full description see the Properties section 7 3 9 Help Menu The Help menu provides access to the online assistance available in TONYPLOT There are four items in the Help menu e TonyPlot Help Shows the latest user s manual for TONYPLOT in PDF format e Release Notes Displays a help window containing information about the current release of the program e EMail Displays the popup that provides an interface to electronic mail With this popup you can compose a message that you wish to send to the support staff at Silvaco and deliver it without leaving TONYPLOT For maximum benefit it is strongly recommended that you complete all sections on the Environment Properties popup described in a
81. after you have entered a value for this field e Name This field contains a more complete descriptive name for the layer You must press the Return key after you have entered a value for this field e Field This field indicates whether the mask reticle is a dark or clear field Dark field layers consist of holes cut into an opaque reticle Clear field layers have opaque mask elements on a transparent reticle The field value is used when writing mask output to determine if a present mask polygon corresponds to the presence or absence of mask material e Mis alignment These fields x and y are used to offset a complete mask layer in the horizontal and vertical directions This can be used to experiment with the effects of accidental or deliberate mask mis alignment e Delta CD This field value 1s used to bloat or shrink mask elements by the value specified Entering a value causes the sides of the each element to move outwards in inwards by the difference between the old value and the new value If the field attribute is Clear then a positive change causes the elements to bloat A positive change causes the elements to shrink if the field is Dark e Add Button New layers are added by selecting one of the options available under the Add button The new layers can be inserted before or after the current edit layer e Delete Button The current edit layer can be deleted by clicking on the Delete button A warning message is d
82. an item in the key or by adjusting the phase value slider below it e Transmittances This mode is similar to the phases mode except the key and the display Figure 10 5 shows mask transmittance values e Regions This shows regions that have been set up in the Region definition popup All polygons are outlined only on the screen but can still be edited The current edit layer is chosen by selecting the layer name from the menu on the key panel Regions are enabled disabled by selecting the key button next to the region name Regions are features of the layout that can be identified using layer combinations For example device gate regions are areas where polysilicon overlaps active areas 10 6 SILVACO International MaskViews 10 4 Editing 10 4 1 Defining Edit Parameters Selecting Screen from the Define menu presents the Screen popup Figure 10 3 ui Maskviews Screen Tithe CMOS Inverter Sateen i Work area size 10 00 microns Resolution Gi nieroens microns rrp deed Fy Figure 10 3 Screen Popup This popup is used to set the following screen parameters e Title Sets a title string that will be displayed at the top of the layout and on any hard copies e Work Area Size Sets the size in microns of the total layout area e Resolution Specifies the resolution to which all draw edit and simulator actions are rounded Three input fields are available to specify the resolution The check box next t
83. any PC Compatibles that support Exceed or Exceed XDK version 7 1 7 1 0 1 for Windows XP or higher with the Exceed 3D add on Exceed 3D allows you to display OpenGL based 3D applications using the Exceed X server by providing support for the GLX extension Operating System This version of TONYPLOT3D requires Exceed or Exceed XDK 7 1 7 1 0 1 for Windows XP or higher with the Exceed 3D add on Graphics Hardware There are two ways to produce screen images The first way is to use a software renderer which uses graphics primitives implemented in software The second way is to use a hardware renderer which uses native graphics hardware implementing the OpenGL API version 1 1 or higher No software renderer has been provided by Silvaco for Exceed on Windows NT 2000 XP The hardware renderer requires a True Color graphics adaptor that supports OpenGL API version 1 1 You can use xdpyinfo to obtain information about the X server on your machine Memory TONYPLOT3D requires a minimum of 128Mbytes of real memory But for better performance and more memory we strongly recommend 256Mb or 512Mbytes OpenGL Library TONYPLOT3D is designed to work with OpenGL API version 1 1 or higher Contact your graphics hardware vendor for information on obtaining OpenGL drivers for your graphics card Contact Hummingbird for information on getting Exceed 3D for Windows NT 2000 XP at www hummingbird com 8 42 SILVACO International Chapter 9 DevEdit 9
84. are constructed by selecting the start and end points of the stick on the main layout screen A stick is drawn along the line joining the two points with a diameter as specified in the Width field of the objects popup and a shape as specified in the Type field Three stick types are available e Butted The end points of the stick exactly coincide with the end points of the drawn line The stick 1s still rectangular e Extended The end points of the stick overshoot the end points of the drawn line by half of the diameter at both ends The stick 1s still rectangular e Rounded The end points of the stick overshoot the end points of the drawn line by half of the diameter at both ends The ends of the stick are round Sticks are converted to polygons as they are drawn You cannot alter the width type and position of the stick once you draw the stick You can cancel stick drawing before specifying the end point by selecting Edit Cancel Stick drawing obeys the rules for resolution spacing and angle constraint If you use MASKVIEWS with the OPTOLITH simulator then a warning message will be displayed if the stick diameter selected cannot be correctly quantized with the specified resolution Serifs Serifs are small squares that are added to masks to sharpen the corners of the mask when 1t is projected and exposed on the semiconductor substrate When in this drawing mode a single click places a square with each side specified by the width
85. as a structure file each new mesh point s value is found by extrapolating the value based on the mesh point s material and the values from the closest triangle or prism in the original mesh These values are added to any user created impurities to create the final impurity profile 9 11 4 Add Impurity Mode To add an impurity distribution pull down the Impurities menu on top of the screen and Select Add Impurity that is the default action for Impurities This action places the Add Impurity panel below Add Impurity Impurity Arsenic Color ln Draw Mode Rectangle Line Circle Ring Start X 0 0000 Microns Start Y 0 0000 Microns End X 0 4000 Microns End Y 0 0000 Microns Peak Concentration 1e 20 Reference Value A 1e 15 Join Function Multiply Y Rolloff Gaussian Dist Distance 0 5 X Rolloff Error Function Dist ya Distance 0 3 Rolloff Apply Cancel Figure 9 32 Add Impurity Panel 9 46 SILVACO International DevEdit Note Add can not be selected if an impurity is currently being modified until the modification is completed If an impurity is being added the Add Impurity panel will be displayed in its current state 9 11 5 Defining An Impurity Source Area The impurity source area 1s the area in which the impurity 1s set to a Peak Concentration The area can be a box a rectangle a vertical line a horizontal line or point For this area the
86. as follows deckbuild an run filename in DECKBUILD appears on the screen as a closed Icon and execute the named input deck it may be opened to a full screen at any time during the execution DECKBUILD exits completely when the last command in the input deck has been executed If the runtime output is required to be stored into a separate file the following options can be used deckbuild an run filename in outfile filename Again DECKBUILD appears as an Icon and executes the specified input deck But in this case all runtime output is appended to the named out file If simulations are executed while X Windows is not running or in a screen locked mode the ascii option can be used as follows deckbuild an run filename in outfile filename ascii DECKBUILD does appear as an Icon and executes the specified input deck All runtime output 1s again appended to the named outfile as recommended for ascii use If no outfile is specified for this type of command the runtime output is displayed in the current command tool Structure files saved during batch jobs should be carefully thought out Make sure not to over write structure files with subsequent runs in the same working directory 4 12 SILVACO International DeckBuild Defaults A large number of control settings and options are configured at startup time To configure these default options use the Save function in the DECKBUILD property popups DECKBUILD provid
87. at about the half way point along the line Thus modifying an existing line is very simple so that placement can be very accurate The position of a line is fixed only when the apply button is pressed on the main doping control screen Add Impurity Impurity Arsenic Color B Draw Mode Rectangle Line Circle Ring Start X 0 0000 Microns Start Y 0 0000 Microns End X 04000 Microns End Y 60 0000 Microns Peak Concentration 1e 20 Reference Value 18415 Join Function Multiply Y Y Rolloff Gaussian Dist Distance 0 5 El FOTO Tu X Rolloff Error Function Dist Distance 0 3 tRollorrt Apply Cancel Figure 9 30 Impurity Panel 9 8 3 Defining an Impurity Source Box A doping distribution can be defined about a box drawn on the device The box source can be vertical or horizontal to the main axis A doping source box is defined by first selecting the Add option under the impurities menu button The control screen to the right changes at this point The Draw Mode switch in the Impurities control window should be switched to Box A Box source implies a constant doping concentration within the box and the concentration can roll off in magnitude in any perpendicular direction to the box The box 1s defined on the screen by holding down the left mouse button at a box corner and dragging the cursor over the screen Once drawn the box can be adjusted by moving the top SILVACO International 9
88. axis attributes and Y axis attributes allows you to modify the data values on each axis independently To compute net concentration versus depth you can select abs on the y axis concentration and select nothing on the x axis depth abs is always evaluated before taking the log or square root of the data e Curve X axis bounds specifies whether to create the curve for the whole X axis or for only a required section If selected X axis value fields become active enter values in the same units as the resulting curve This 1s useful for extracting local maxima and minima e Store X Y datafile stores an output file in TONYPLOT data format if set to Yes You can plot the data file in TONYPLOT using the da option You can also read the data file directly into the OPTIMIZER worksheet as a target if desired e Compute curve area computes the area under the curve When checked it causes several other items to become active Area X axis bounds tells ExrRACT whether to integrate the area under the curve along its entire length or just for a bounded portion of the X axis If you select Bounded then X axis start and X axis stop become active Enter start and stop values in the same units as the resulting curve To construct the 2 D curve set each item on the popup in turn and click on WRITE Depth is always computed as distance from the top of the selected material layer and occurrence Depth starts from 0 and increases through the material SILVAC
89. by selecting the impurity on the scrolling list and sliding the weighting factor slider to the required weight The smaller the number the finer the grid The weighting factor refers to the natural log increase of a quantity that is accepted without halving the mesh spacing For example if the weight for phosphorus was set to 3 the grid would only half its size when the concentration was found to be more than exp 3 20 08 X difference between two adjacent points By default the weight is 1 so each time a value is multiplied by 2 72 across two grid points it is earmarked for adapting Selected impurities can be deleted from this list by clicking on the listed impurity and clicking on the Delete button Impurities have to be present in the structure before refinement can take place Once weights have been setup click on the Apply button To start the meshing procedure select the Meshbuild option under the Mesh button Boundary conditioning is advised before any meshing procedure Boundary conditioning can be applied either before or after setting up the adaptive meshing settings SILVACO International 9 43 VWF Interactive Tools 9 9 7 Manually Refining The Mesh Any mesh can be refined manually by selecting the menu options Users can refine a selection box in both directions Alternatively refinement can be restricted to either the X or Y direction by selecting either of the options Mesh Refine Box Refine X OR Mesh Refine Box Ref
90. curve X Quantity Any input parameter can be chosen for plotting on the x axis In addition values of this input can plotted on a log scale SILVACO International 7 29 VWF Interactive Tools Y Quantities s Any output parameters can be chosen for plotting on the Y axis There are two lists one for outputs to be plotted on a linear axis and one for a log axis Any combination of the two can be used 7 12 2 2D RSM Contours In the 2D mode RSM plots show how outputs vary with respect to two independent input parameters The way contours are drawn can be specified in the same way contours are drawn in regular 2D Mesh plots from ATLAS or ATHENA X and Y Quantities Two inputs must be chosen for contour plots one for the x axis and one for the y axis The inputs chosen must be different Each of these can be plotted on a log scale 1f desired Z Quantity The Z Quantity cannot be chosen it is always the RSM output parameter that is plotted but it is possible to specify a linear or log scale for the Z axis Contour Type Contours can be drawn as lines or filled areas and filled areas can be outlined There are a number of color sets that can be used to create the contours All these options are controlled with the items in the lower left corner of the control panel Mesh Next to the icons for controlling the contour types is an icon that draws the sample mesh on top of the contour plot This mesh shows the points where
91. define parameters targets and setup information for an optimization run in any order The OPTIMIZER however does not run until you define at least one parameter and one target 6 2 4 Optimizing Once the parameter target and optional setup information is defined the OPTIMIZER can be started by clicking on the Optimize button Clicking on the button a second time aborts the optimization Once the optimization has started all worksheet information as well as the input deck is set to a read only state that cannot be edited During the optimization run the Graphies mode shows real time updates of current parameter target and error values At the beginning of a run the OPTIMIZER always runs a sensitivity analysis of n 1 loops at the start of the input deck n is the number of input parameters SILVACO International 6 3 VWF Interactive Tools 6 3 Parameters A parameter is any numeric constant in an input deck That constant may represent anything such as etch thickness contact voltage or work function Because the OPTIMIZER needs to vary its value to achieve convergence the parameter must be numeric 6 3 1 Adding Parameters To add a parameter follow these four steps 1 Display the Parameter worksheet by setting Mode to Parameters To do this position the pointer over Mode click the MENU mouse button and select Parameters The Parameter worksheet 1s then displayed Figure 6 3 iy Deckbuild Optimizer optex
92. displaying information contained in structures TONYPLOT also has the ability to interrogate that information in a variety of ways Each method of examining the data is called a Tool and the main Tools menu shows all the tools available The Tools menu may show some items as being unavailable This is because the tool cannot be applied to the current set of selected plots For example the HP4145 Emulator tool only works with Graph plots so it is unavailable if no Graph plot exists and is selected Each of the tools are explained in full below 7 16 1 Cutline The Cutline tool is used on 2D Mesh plots only It is used to create 1D cross section plots from arbitrary positions within a 2D structure Control Items 7 38 The Cutline Tool popup Figure 7 23 consists of the following items e Create the top section provides different choices for creating cutlines These choices are free vertical horizontal chained interface and keyboard Each of these 1s described below e Select The center portion allows any cutline created to be chosen for manipulation This includes shifting and movie making of the cutline e Movie The movie section displayed when the Make movie button is clicked on is used to make a movie from a cutline by repeatedly moving its position e Shift A cutline can be moved once created by using these controls which are displayed when the Shift position button is clicked on Tonyplot Cutline CREATE
93. e 1254 ad t Mela 4 31 E OT NODE arica iq otii ote chap diae los debat Do de ott de es es pisas 4 32 IY to ak I EE 4 32 1 0 lee AS ees EM is Mei IDE Ed 4 33 s rom oand Mo Qi edo ERE 4 33 AG 2 Slang MaSKVIBWS i224 och inch ai hae bai ds Us obe teen eee ees Lars d el 4 34 ulna moe cd AAA A 4 37 404 5taning MaE xa Sea io e elas 4 37 T95HIStOly E A Ad 4 38 SS eat eelere bere 4 38 A 9 2 a roa OM o A 4 38 4 10 Auto INIGMACING DEE 4 40 ENEE Mm 4 40 A102 COIN ia cee Serene specced la 4 40 eebe rp 4 43 GAA OVCMICW se EE EE 4 43 4 11 2 Creating a Generic Deck EE 4 43 AES ROOS geheegt ee a AE load sean 4 44 4 114 RUGS OF DREI cestas Re hy heed ets eege bee eebe d tie tes 4 46 4 11 5 Mask Bias Misalignment and Delta Cl 4 46 4 11 6 Using DevEdit with IC el LEET 4 47 kalen EE 4 48 Mal 2 We OV A ben ae dra ait ahaa ee E dhe re Ae a E eh Ga he 4 48 4 12 2 Setting Up An UTMOST Input Deck 4 48 4 13 SManopice MeN ACG eer caer eh eee laa 4 56 4 14 internal IMGT LEE 4 57 4 15 Remote Simulation 55 2 exe vus YE yas ae Uranus haw thine ore ge SE 4 58 AO OVENI MT oe 4 58 A 19 2 MEMO OPIO See Retreat dc ee Abd is d boe inci 4 58 415 3 ETOUDIOSTIOODIDIC eener oe oc oet hole aah ER CER tte atc bea el ge eo adalah qat E aee 4 58 EE 4 60 AAG OVEIVIOW ras dea A rata ae 4 60 4 162 Deckbulld COMMANGS EE 4 60 EE i ee ee eee eee eer eee eee ee ee AT ee Oe eee ae ee ee eee See 4 60 44164 AUTOBLECTRODE rta cree Eege EEN 4 6
94. e d X rolloff distance lateral distance Ax e ifp lt p then doping Py e P 9 28 9 54 SILVACO International DevEdit else doping p P 9 29 To add these changes to the device click on Apply Click on Cancel if you do not want to add or modify this 1mpurity 9 12 4 Deleting Impurities To delete an analytic impurity select an impurity in the User Defined Impurity list on the main panel pull down the Impurities menu and choose Delete 9 12 5 Editing Impurities To edit an analytic impurity select an impurity in the User Defined Impurity list on the main panel pull down the Impurities menu and select Modify The same panel used for adding an impurity is now displayed with all the filled in values These values can now be edited 9 12 6 Combining Impurity Rolloffs In the special case where the rolloff in one direction along an axis is different from the rolloff in the other direction along the same axis two impurity specifications must be combined to produce one impurity profile Special care must be taken when defining these impurity definitions to prevent similarities in the seam between the two impurity definitions This could cause the impurity to be zero or twice the Peak concentration at the seam The following 1s an example of combining two impurity definitions to simulate the surface effect of a doping implant Enter DEVEDIT and set the work area to 0 0 25 and 2 2 2 Create two regions The first
95. edge of the impurity source area to have a zero value As you can see if the start value along the axis equals the end value the entire impurity source area will have a zero value Rollofr Rolloff Rollorf Rolloff Figure 9 38 RolloffzHigh P Step Rolloff Low Rolloff Low Figure 9 39 causes the rolloff function to be used in the negative direction from the impurity source area In the positive direction the impurity value drops to steps down to zero if the distance is greater than zero 104 FOTO Balloff Rolloff Rolloff Rolloff Rolloff Figure 9 39 Rolloff Low Rolloff Step Rolloff Step Figure 9 40 causes no rolloff function to be used The impurity source area contains the peak value which immediately steps down to zero away from the impurity source area in the given direction ON Abo ON 4401194 Ho Rolloff Ha Rolloff Ho Rolloff Ho Rollaff Ho Rollaff Ho Rolloff Ha Rollaff Figure 9 40 RolloffzStep Rolloff Step P Low Rolloff Step Premature Low or Step P Low Figure 9 41 causes no rolloff function to be used The impurity source area contains the peak value except along the negative edge which is zero All areas outside the impurity source area also get zero values As you can see in columns 2 and 4 of Figure 9 43 this is completely useless if Start X Y equals End X Y ON 4401194 4401104 o Ho Rollaff Ho Rollaff Ho Rollaff Ho Rollaff Figure 9
96. either confirm or cancel the overwrite each time If you activate Never DECKBUILD displays a notice prompt confirming that the operation was cancelled The default is Confirm Change insert point modifies the WRITE insertion behavior This feature is designed to make deck building easier by checking the location of the text caret each time WRITE is clicked on The caret should be at the beginning of a line It could be relocated for various editing purposes resulting in the cursor being left in the middle of a line Next Line automatically moves the caret to the beginning of the next line Confirm asks for confirmation or cancellation of the move each time If confirmed DECKBUILD moves the caret to the next line Never inserts text wherever the cursor is located The default is Confirm Auto MaskViews enables or disables the automatic substitution of MASKVIEWS layout information during deck execution DECKBUILD also displays the status of this choice in the left footer of the Main Control popup for easy reference during run time The MaskViews Files button is placed here as a convenient way to select cut files also accessible from the Cut files under MASKVIEWS on the Tools SILVACO International 4 23 VWF Interactive Tools menu See Section 4 16 11 MASKVIEWS for a complete description on how to use it with DECKBuILD The default 1s Enable Plot structure controls where interactive plots are made Interactive plots are done from e
97. equally applicable to all curves whether the curve came from process or device simulation The only type specific syntax relates to the curve axes For example gate voltage can t be extracted from a process simulator If you try then a warning message will appear 5 4 1 The Curve The basic element is always the curve Once the curve is constructed it can be used as is by saving it to a file for use by TONYPLOT or as an OPTIMIZER target or it can be used as the basis for further extraction For details on the extract curve syntax see Section 5 3 1 Extract Syntax To construct a curve representing voltage on electrode emitter1 on the X axis versus current on electrode base2 write extract name iv curve yv emitrterl 1 basez The first variable specified inside the parentheses becomes the X axis of the curve The second variable becomes the Y axis The v name and i name syntax is used for any electrode name just insert the proper name of the electrode The electrode name be defined previously such as in the device deck or previous to that in an ATHENA input deck using the electrode statement or interactively in DEVEDIT Electrode names may contain spaces but must always have quotation marks Transient time is represented by the keyword time extract name It curve curve time 1 anode For Device temperature curves use extract name VdT curve v drain temperature For extracting a
98. errada AA eC ERROR TERRE Pera 4 18 ASMA CONTO DEE 4 20 AOA COMOUPAG TTL rer 4 20 4S2 GHOOSING a SIMUIAION EE 4 20 49 3 Simulator POPE MIES erreinuen dept ee brc e Perte EEE 4 21 2 541 ola S I UTR OT EE 4 21 4 5 5 Simulator GORITOIS vs aiite eebe tpa adeat ie deg eebe 4 21 456 Options Cat goN sue saa via mre CETERI T aeque nn VR Yu ded Rea da 4 23 4 5 7 Messages Category stp Se e ctas Pee edd Padre eda ead A accitis D Eg ace EE 4 25 4 58 Formatting Cate dOTi zebra cn tease od oe Ead oap chao AAN 4 26 4 5 9 Arguments Category AAA acida iet obtient Due Eid aede pcc Eater dosi dul 4 26 16 EXeGUllon CONO o react aen a Um aes peces a rea ca papa ded aiit E 4 27 46 1 EXecutlor CONCEDIS soar uci ue ea qt e Roe ERE RC PEN PUDE ROI V a S 4 27 402 Execution Control BHHOTIS o4 ur erasa be Pr Ani 4 28 4 6 3 Stepping Through and Running the Deck 4 28 4 6 4 Setting and Clearing Breakpoints 0 ccc cee cent III 4 28 4 6 5 Setting the Current LING Ee aio oh eR LE Per e e Enti e ad desea eyed REV RP PESE 4 28 4 6 6 Pausing Stopping and Restarting the Simulator 0 0 cece eee eet eee o 4 29 4 6 7 Initializing the Simulator ois areae Bean cec Ye gia rc Edna We diese wh Pinch dele 4 29 17 COMMANA S cuu ge Pe ae eee ee tcs a Id ire 4 30 vi SILVACO International Table of Contents 4 7 1 Deck Writing Paradigm uot dan Dc a XR ee CURL EROR EE CELL RES 4 30 EE le le 4 30 4 1 3 Process Simulators
99. extended the menu displayed contains all of the options normally available on the control panel When the control panel 1s switched off Screen menu set to extended is enforced e Edit cursor specifies whether the window edit cursor is the standard pointer type or a transparent cross hair type 10 8 4 3D Mask Properties This category is used to customize the three dimensional mask summaries which are displayed when 3D Process simulator output 1s generated by the ATLAS simulator e 3D projection indicates the type of draftsman s drawing functions used to convert the 3D models to 2D images e Draw outlines specifies whether outlines of all the masks displayed are visible through obscuring mask objects e Block height specifies that mask blocks drawn should completely extend vertically the space allocated to the layer or only half of 1t e Cast shadows toggles the drawing functions that cause shadows from higher mask objects to be cast onto lower ones Shadow drawing make take some time to calculate so 1s not always desirable 10 8 5 Drag and Drop This category defines parameters used with the drag and drop abilities available 1n MASKVIEWS e Layout drop site selects whether to drop layout information from the VWF onto MASKVIEW s main layout screen for loading e Cutline drag site specifies whether to drag cutline files from the summary displays to DECKBUILD e Drag threshold specifies the number of pixels the mouse pointer has
100. following occurs 1 Exec Simulator causes the currently running simulator to shut down and the new simulator to start If you enable the Auto Interface option and DECKBUILD determines that an interface is appropriate then DECKBUILD performs an auto interface from the current to new simulator Exec Simulator is enabled by default 2 Auto Interface causes an auto interface to be performed between the current and new simulator This option is also referenced at run time whenever DECKBUILD encounters an auto interface statement in the input deck See Section 4 10 Auto Interfacing for more information Auto Interface is enabled by default 3 Commands causes DECKBUILD to change the Commands pull down menu to reflect the new simulator s syntax All popups for the current simulator that are not pinned are closed Commands is enabled by default 4 Write to Deck causes an auto interface statement to be inserted in the input deck at the location of the text caret See Section 4 16 4 AUTOELECTRODE for more information Write to Deck is not enabled by default Note DECKBUILD always delays popup creation until the popups are needed to reduce startup time The Commands menu and associated popup windows are created only when referenced for the first time Therefore if the new simulator has not been referenced before then there is a short delay while the popups are created Otherwise the change will be instantaneous A notice in the lower
101. for comparing the results of different simulation runs After pressing the Plotter Props button the Plotter Set Files popup will appear This contains a scrolling list of set files in the current directory and a text fields used to search for set files Adjust the directory name and directory filter 1f necessary Click SELECT over the name of the desired set file if any in the scrolling list If none are desired then make sure no entries are selected de select a selected list entry by clicking SELECT on it again The selected entry if any will be used as the set file on subsequent plots It is also possible to specify when DECKBUILD should save the active structure no filename highlighted See the Plot structure description in Section 4 5 6 Options Category It provides a shortcut to Plot on the Tools menu Show Currently Executing Line tells DECKBUILD whether or not to select highlight each line in the input deck as it is executed by the simulator DECKBUILD also automatically scrolls the text subwindow to keep the currently executing line always in view This feature is enabled by default except when running batch mode run 4 22 SILVACO International DeckBuild 4 5 6 Options Category The Options category Figure 4 12 is a collection of a number of settings that modify the behavior of various DECKBUILD functions For example it is possible to configure what happens when WRITE is clicked on a syntax popup whether
102. frequency curve use extract name Idf curve i drain frequency To extract a capacitance or conductance curve use this syntax extract name cv curvele electrodel electrodez w electrodes SILVACO International 5 29 VWF Interactive Tools and extract name gv curve g electrodel electrode2 v electrode3 For other electrical parameters see Section 5 3 1 Extract Syntax section for valid electrical parameters use the following syntax extract name IdT curve elect parameter v drain An extract name is given in each example Although optional it is always a good idea to name extract statements so they can be identified later Names are always necessary for entering an extract statement 1n DECKBUILD s OPTIMIZER and for recognition by the VWF It is also possible to shift or manipulate curve axes Each axis is manipulated separately The simplest form of axis manipulation is algebra with a constant extract name brzo iv Curve Gate 50 TO i4 drain You can multiply divide add or subtract any constant expression to each axis Curve axis can also be combined algebraically similar to TONYPLOT s function capability extract names combine curve 4 collector a collector 7 base All electrode values current voltage capacitance conductance can be combined in any form this way Another curve type is deriv used to return the derivative dydx For example statement below will crea
103. from the first to the last line or to the breakpoint if any e quit Sends a quit statement to the simulator e paste Sends the current selection to the simulator to be executed The current selection may exist in any application or in DECKBUILD itself Use paste for example to paste in lines from another input deck that might have been viewed using a text editor e init If the selected text is a file then the correct simulator is initialized with the file Otherwise the selected line is used to initialize from history e pause unpause Pauses Unpauses the simulator e clear Unsets the current breakpoint e restart Restarts the current simulator if it is not running e kill Kills the running simulator 4 6 3 Stepping Through and Running the Deck You can execute one line at a time by pressing the next button The current line is sent to the simulator and the text caret moves to the next line Press next again to execute the next line Continue stepping lines through all or part of the deck Alternately run the whole deck by pressing run The deck is executed from the first line to the last Press cont to continue onwards from the current line all the way to the end of the deck Both run and cont stop at the breakpoint if one is set You can stop the execution at any point by pressing the now option on the stop menu This does not quit the simulator but halts the execution after completing the current comman
104. front ou Show the structure from the back E Show Left Show the structure from the left gU E Show Right Show the structure from the right gq 8 3 4 Plot Control Using the Mouse Within the Main Window you can use the mouse to move the structure You can adjust the functions of the mouse by using the Mouse Interface see Mouse section on page 8 38 for more information There are six different movements you can apply to the structure rotation which has three modes translation zoom and scaling Rotation The left button rotates the structure at the center of its bounding box Shift and the left button rotates from the point where the click originated in the 3D scene Shift and the middle button rotates the structure from an axis going out of the screen and from the middle of the viewport SILVACO International 8 7 VWF Interactive Tools Translating To translate move the plot hold down the middle button while dragging the mouse The plot will then move in response to the movements of the mouse Zoom To zoom use the right button This is essentially a translation applied on an axis going out of the screen Very different from the scaling since the vertices of the structures aren t modified Scaling To scale a plot hold down the Shift key and use the right button The scale can be applied independently in the X Y and Z directions for more information see the Sealing option in the Camera Interface on page
105. generates an experiment from a specified number of trials All parameter values in each trial are random Each parameter is drawn from its own distribution The number is the number of trials you want in the experiment A parameter should be the name of a variable in the template deck The names e g param1 cannot be abbreviated They must be exactly as they appear in the template deck SILVACO International B 8 DBInternal The type must be one of the following e uniform e normal e log normal gamma e weibull These are the types of random distributions a parameter will be extracted from The coeffs are a list of numbers that describe the random distribution the number and meaning of the coeffs depending upon which distribution was chosen Random Distributions The probability density function and the required coefficients for the following random distribu tions uniform The uniform type takes random numbers evenly spaced between two limits The probability density function is 0 x xj or x 2X4 I B 1 Xi EX X p x p x i O This distribution needs two coefficients the minimum and maximum allowed values coeffs Xj Xp B 2 normal The normal type is a Gaussian probability density The probability density function is p x Le a B 3 J27 0 20 This distribution needs two coefficients the mean and the standard deviation coeffs u o B 4 log_ normal The l
106. height is 12 14 minus top and bottom margins of 1 each enter 12 into the Height field Note Note if the sizes are in centimeters add the letters cm to the number e g 12 cm 3 Specify the margins by entering the Left and Bottom margins enter 1 for each Next TONYPLOT must be told whether the form is a portrait or landscape form On portrait form the image appears vertically oriented height longer than width On landscape it appears rotated by 90 and the image is drawn sideways on the paper with the width longer than the height 5 After the new form is defined add this to TONYPLOT s list by clicking on the Update button The name Large then appears in the list You can repeat this process as many times as needed to enter all the forms that can be used with TONYPLOT Once complete click on the Save as defaults button to save this information and so that you do not need to re entere the next time TONYPLOT is started The information about the forms is unlikely to change and it is not likely that the Form Editor is used often SILVACO International 7 53 VWF Interactive Tools 7 17 9 Setting Print Options Once the desired printers and forms have been entered and saved only the Print Options popup is needed to change the way TONYPLOT creates hardcopies The Print Options popup is displayed by choosing Options from the main Print menu Do this now to note how the popup looks The first choice
107. held on the first region of the top occurrence of polysilicon A value of QSS 5 0e10 is also specified for the first interface occurrence extract start material Silicon mat occno 1 region occno 1 bias 0 0 bies step 0 00 bras stope5 0 x vals0 1 extract cont materral Polysilicocon umatioccnosSl Drass2520 x vals0 1 region occno 1 extract cont interface occno 1 qss 5 0e10 extract done name P type SC curve bias ldp conduct material Silicon mat occno 1 x val 0 1 region occno 1 outfile PtypeSC dat SILVACO International 5 27 VWF Interactive Tools The command below extracts the p type sheet conductance against bias curve of the first and second p n regions in the top first layer of silicon where a bias 1s ramped from 1V to 2V on the top first polysilicon layer extract start material Polysilicon mat occnosl Dbrase1 0 Dbrascstep 0 05 brasstop 240 br vale0 03 extract done name regionl 2 curve bias ldp conduct material Silicon mat occno 1 x val 0 01 region occno 1 region stop 2 outfile regionl 2 dat Note For sheet resistance extraction substitute 1dconduct with 1dsheet res i e 1dsheet res 1dnsheet res 1dpsheet res Electrical Concentration Curve Extract the electron distribution against depth for the top first layer of silicon where a bias 1s ramped from 0 to 5V for the first region of the silicon and a QSS of 4 0e10 set for the first interface occurrence Device temperature is set at 325 Kelvin
108. i Optimization completed OK Max error within limit Figure 6 23 A Curved Target The Current Errors section at the top of the window maintains the values of RMS error average error and maximum error over all targets It also displays the total number of iterations so far the average iteration time and the total elapsed time The total elapsed time increments in real time as the optimization runs The number of iterations counts the number of simulation computations not Marquardt iterations defined on the Setup worksheet The Parameters column keeps track of the input parameter values Each rectangle represents vertically the allowable range of the parameter its minimum to maximum value while the horizontal axis represents the number of iterations The parameter values are displayed for all iterations to date SILVACO International 6 21 VWF Interactive Tools The Targets column shows the target values the current simulated values and an error term For single point targets the target is drawn as a horizontal line and simulated values plus error terms are drawn for all iterations to date For curved targets the target curve and the simulated results curve are plotted plus the current average error over the entire curve This Graphic iteration history information is maintained until another optimization run is started or until any target or parameter 1s added or deleted 6 22 SILVACO International DeckBuild Optimizer 6
109. integrals or Monte Carlo ion implant Some of these features have further control popups and these can be accessed from the Define menu Clicking on the Define button shows popups for all features that have been chosen while choosing an item from the menu shows just that corresponding popup The features that have detailed control are Regions Contours Vectors Light and 3D SILVACO International 7 19 VWF Interactive Tools Regions There are a number of ways that TONYPLOT can display mesh regions These are available from the Regions popup Figure 7 9 which is accessed from the Define menu Tonyplot Regions Show as Solid Lines Lines Points Color by Material Apply Reset Dismiss Figure 7 9 Regions Popup The first choice controls the way in which regions are drawn The options are Solid which fills the region area with color Lines which draws the region outlines only and Lines Points which draws the region outlines and marks the points defining the region border The second choice determines the parameter used when determining the regions color The first two options are always available Material and Region If Material is chosen the color represents the material of the region silicon oxide etc and the region key shows the material names If Region 1s chosen then each region has its own unique color and the key shows the name of each region If the data contains further region informa
110. is available for all GUI items displayed such as push buttons sliders and check boxes Clicking on the Help key on the workstation keyboard while pointing to GUI item with the mouse pointer opens a popup giving a brief description of the function of the item and how to use it On keyboards without a Help key one can be defined using the command xmodmap e keysym F9 Help which would define the F9 function key to be the help button The on line manual is displayed by selecting Options Manual The on line manual which is organized in a two level hierarchical structure provides an in depth description of the functions and operation of MASKVIEW When first displayed the manual shows an index of all the major section in the help text The buttons along the top of the help display are used to navigate between the pages of the manual In other words selecting Return to index causes the initial main section index to be displayed The Section button contains a menu of all the major sections in the manual If you choose one of these then the topics for that section will appear The Sub section button menu can then be used to select a manual page to be viewed You print out manual pages by pressing the Print button on the help display 10 7 7 Release Documentation Selecting Options Release notes displays a popup listing all of the changes made to the MASKVIEWS manual and program since the previous release The functionality of this notes
111. level of this environment The second level VWF AUTOMATION TOOLS makes it convenient to design define and run large simulation based studies in a way that uses networked and parallel computing environments The third level VWF PRODUCTION TooLs makes it easy to analyze simulation data in various ways that provide guidance and insight to engineers involved in production and manufacturing 2 28 SILVACO International Chapter 3 Manager 3 1 Starting Manager The File and Applications Manager MANAGER is a utility that allows easy access and interfacing to the INTERACTIVE TOOLS and their associated files It displays all the tools available and all the relevant files in the current UNIX working directory and allows tools to be started with selected files automatically providing the correct parameters are used You can start MANGER from the UNIX command prompt by entering manager The MANAGER window will then appear Figure 3 1 This assumes that the SILVACO environment variable has been defined to point to the directory into which the SILVAco software was installed and that SILVACO bin is included in the user s search path There are no command line options for the MANAGER If this is the first invocation of MANAGER the following message appears Creating new configuration files This will take a few moments please wait Configuration files created Starting Master Manager A silvaco directory is then created in the user
112. linear parameters and 1 decade for log parameters You can change response type and min max values after adding parameters These defaults only help make adding parameters quicker and easier Do the following to change the default response type and min max ranges used when adding a new parameter 1 Select View Defaults and the Parameter defaults popup will appear Figure 6 11 y Parameter defaults Type log above 1810 Linear min 50 percent Linear max 50 percent Log min 2 decades Log max 2 decades Figure 6 11 Parameter Defaults 2 Enter the desired new default value s 3 Click on Apply when finished If you want to save the values as permanent defaults click on Save 6 3 6 Copying Parameters To The Deck The OPTIMIZER automatically fills in the Optimized value column on the Parameter worksheet as it runs If the OPTIMIZER converges successfully and retaining the optimized parameter values in the input deck is desired select Edit gt Copy to Deck Copy to Deck copies all optimized parameter values back into the deck in place of the former values Save the input deck using the DeckBuild File menu to generate the permanent changes 6 3 7 Enabling Disabling Parameters The OPTIMIZER allows the disabling of parameters which are then ignored during optimizations Disabling is often useful when a large number of parameters have been entered But you may want to try freezing one or more at c
113. log outf mos log utmost it perform simulation fit ID VG VB 4 48 SILVACO International fit D7 VD VG ESSI RAR RARA HR EXTRACT UTMOST PARAMETERS H 444444444 extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract extract Quit name P VTHO param VTHO name P K1 param K1 name P K2 param K2 name P K3 param K3 name P W0 param WO name P NLX param NLX name P DVTO param DVTO name P DVT1 param DVT1 name P UA param UA name P UB param UB name P UC param UC name P VSAT param VSAT name P A0 param A0 name P A1 param A1 name P A2 param A2 name P RDSW param RDSW name P VOFF param VOFF name P NFACTOR param NFACTOR name P PCLM param PCLM name P PDIBL1 param PDIBL1 name P PDIBL2 param PDIBL2 name P DROUT param DROUT name P PSCBEI param PSCBEI name P PSCBE2 param PSCBE2 name P TOX param TOX name P XJ param XJ name P UO param UO name P ETA param ETA name P Ilinm param Ilinm name P Ilins param Ilins name P Isatm param Isatm name P Isats param Isats SILVACO International DeckBuild 4 49 VWF Interactive Tools There are several points that must be followed to set up an input
114. max conc arsenic extract nmames PN ratio S max boron jS max arsenic You can also use variable substitution in extract with the set command as shown below set cutline 0 5 extract name gateox thickness oxide thickness x val Scutline In addition filenames to be loaded can also be specified this way For example set efile structure str extract init infile efile Note Single quotes can be used to substitute where variable must appear within double quotes 5 8 3 Min and Max Cutoff Values Statements may contain min val value or max val value or both to define a valid range for extracted results single valued results only not curves If you do not define either max or min then the range extends from infinity to the stated value respectively If the extracted value is outside the range then an error message is printed along with the extracted results and also appended to the default results file 5 38 SILVACO International DeckBuild Extract 5 8 4 Multi Line Extract Statements EXTRACT statements may be spread over multiple lines to specify layer biases and QSS values as shown in above examples This involves using the start cont done syntax 5 8 5 Extraction and the Database VWF When run with the VIRTUAL WAFER FAB all extract values in the deck appear as output result columns on the split worksheet Each row of the worksheet contains the input parameters used to create the results The extracted valu
115. more simulated IV result files INIT INF filename MASTER append The master flag tells UTMOST that the data is in master or SSF file format the default output format from ATLAS Use the append flag for loading all but the first IV file as shown above Note Load the files explicitly The auto interface feature of DECKBUILD is not active in UTMOST mode and does not load them automatically Place extract statements at the end of the deck to extract the modeled SPICE parameters The format of the extract statement is extract name name param utmost parameter name where name is any name of your choice and utmost parameter name is the name if an UTMOST parameter It is helpful to first run the deck without any extract statements but with a save outfile filename command UTMOST always prints a list of all parameters it has modeled before it saves the file You can then copy and paste directly from this list into your extract statements The parameter names are case sensitive and the extract parameter name should match the UTMOST parameter name exactly 4 50 SILVACO International DeckBuild Another noteworthy point in the example concerns the device TOX setting which is taken as the value of tox multiplied by a conversion factor tox is an extracted value taken from a gate oxide thickness measured in the ATHENA process simulation in the same input deck tox is also used in a set statement to convert its units from angstroms al
116. moved by simply repeating the placing procedure The old label is drawn in the current background color as a quick erase operation that does not redraw the whole plot Once placed correctly a redraw of the view tidys up the display 7 36 SILVACO International TonyPlot Note If the first character of a label is a space then TONYPLOT will draw a small blob on the end of a leader line This can be useful in helping to identify the location to which the label refers 7 15 3 Special Labels In some cases TONYPLOT generates labels automatically If text appears on a plot it is usually label placed by TONYPLOT that can be controlled with the regular label popup as explained above Some examples of special labels are Integration Tool This tool see the Integrate section adds a label to show the integrated x range and area Although placed in a default position the label attributes can then be customized with the labels popup e 2D RSM Plots Pressing the v key in a 2D RSM plot adds a spot height label to the plot The label can be moved but the height does not change so the label value would then be invalid e Electrode Names 2D Mesh structures from ATHENA or ATLAS can contain electrode information When electrode names are plotted they appear as labels By default they are positioned over the appropriate electrode but can be moved if desired SILVACO International VWF Interactive Tools 7 16 Tools As well as
117. name that is already there 2 Choose the queue to which the printer is attached TonYPLOT finds all the queues that can be used and the one you want should be chosen from the choice item marked Queue For example select djet1 If you are not sure which queue to use consult your site administrator 3 Now tell ToNyPLoT the type of printer you are adding this makes sure the hardcopy files are created correctly Choose Color DeskJet 550 because that 1s what 1s being added 4 Set the DPI by finding the value as given in the manual for the printer Looking it up find the value to be 600 so enter 600 into the space provided 7 52 SILVACO International TonyPlot 5 Because this printer produces color plots tell ToNvPLoT to produce hardcopy files with color information Set the choice item to Color 6 Now the new printer has been defined Now add this to TONYPLOoT s list by clicking on the Update button The name Deskjet then appears in the list This process can be repeated as many times as needed to enter all the printers that are to be used with TONYPLOT Once complete click on the Save as defaults button so that information is saved and will not need to be re entered the next time TONYPLOT is started Because the information about the printers is unlikely to change it is unlikely that the Printer Editor is used often 7 17 8 Adding Forms To TonyPlot To add a form to TONYPLOT the Form Editor is pr
118. now adheres to these criteria SILVACO International 9 25 VWF Interactive Tools DevEdit 2 4 4 A mos1ex01_0 str modified E File v Regions T Impurities y Mesh v Help T p Mesh Constraints AK Material Types and Regions All Regions Semiconductor Regions Insulator Regions Metal Regions 1 Silicon W 2 Silicon Oxide 8 gate 4 source Max Angle 90 0 90 0 AAA 180 0 1 Max Triangle Ratio 20066 wi Max Height 0 1000 0 0001 e 100000 wi Max Width 0 1000 0 0001 e Ej 100000 J Min Height 00001 ANS 1 P OP LM AE jin Y zs jin Done Copyright Q 1997 SILVACO International Inc io ine QVY Figure 9 21 Mesh after Refining on Constraints in Semiconductor Further refinement can be made in more specific areas Scroll down in the Material Types and Regions box In addition to the general areas all regions semiconductors insulators and metal regions and the specific regions in this case silicon oxide gate poly source and drain there are fixed box constraints under region constraints and under material constraints These latter options can be very useful for MOS devices since the channel area 1s a critical area for a dense mesh Select Add New Under Region Constraints Click on the Location button if not already depressed adjacent to the Constraints Next to Under Region select with right mo
119. of constant value throughout a 3D structure The Quantity controls which impurity is used in the computation The value of an isosurface has to be within the data range Min Max of the Quantity and can be changed in the Value text field To view an isosurface you can either turn on the Preview IsoSurface or select the Create button Once created the isosurface will appear in the isosurface list Use the Delete button to remove the selected isosurface from the list You can use the Draw Mode to change the appearance of all the isosurface at once see Table 8 6 Figure 8 10 shows a MOSFET that has been hit with SEU Single Event Upset alpha particle strikes The path of the particle is shown by the isosurface plots of electron concentration 8 16 IsoSurface 1 IsoSurface 2 IsoSurface 3 IsoSurface 4 IsoSurface 5 IsoSurface 6 P Electron Conc Electron Conc Electron Conc Electron Conc Electron Conc Electron Conc m me Figure 8 10 Isosurface Display Mode SILVACO International TonyPlot3D ATLAS Data from seuex03 4e 12 str Materials Aluminum Polysilicon Si 3H 4 s t silicon Figure 8 11 Example of Isosurfaces in a plot SILVACO International 8 17 VWE Interactive Tools 8 4 5 Vectors When a structure contains vector data you can use this method to visualize their directions and magnitudes Figure 8 12 shows the Vectors Display Mode TonyPlot3D Display Modes Vectors 1 E Field D
120. of interest The next concern is creating a mesh for the device 9 14 SILVACO International DevEdit Mesh Creation MeshBuild The Mesh pull down menu has a MeshBuild command This command reads the current boundary conditioning conditions the base mesh the geometry and impurities and mesh constraints and creates a mesh using the mesh parameters available The default parameters create a mesh adequate to define the geometry of the device but little else It is unsatisfactory to describe the details of the impurity distribution for instance or the material layers for device simulation in ATLAS Mesh Parameters Under the Mesh pull down menu there is a command of Mesh Parameters Base Mesh Height and Width may be used to create more symmetric meshes for some devices For most devices setting Mesh Constraints provide the same results and also allow more fine tuning Therefore these parameters were not used in this example In devices with extremely detailed region borders it may be turned Off Click on Cancel See Section 9 9 2 Boundary Conditioning is discussed in the next example Refine on Quantities This command allows you to refine the mesh on gradients of various quantities including donors acceptors total and net doping molar composition If the structure was imported from ATLAS other quantities including electrical field and potential are available This is a useful tool for refining the erid on areas that
121. off apply threed impurity string threed show edges on off threed show yaxis grid onloff threed show xaxis grid on off threed show mesh onloff threed show grid on off threed draw color threed draw light threed threed threed threed CULLIN LH light Tron light Iion SILVACO Interna angle xaxis lt int gt angle yaxis lt int gt draw from lt int gt apply e from lt expr gt lt expr gt to lt expr gt lt expr gt beam int onloff materials all materials string on off Style int FUNCELON Mb tional TonyPlot 1 73 VWF Interactive Tools 7 74 LIGNE COLO Sut light maximum lt int gt ier vecto vecto vecto vecto vecto vecto vecto mesh2 apply rs z1mpurity lt string gt rs materia rs materia LS ENEE EE dE all rs maximum lt expr gt rs minimum lt expr gt ES color lt rs apply d apply impurity lt strin impurity none IMPOUETES dul X OCE xaxis yaxis yaxis yaxis yaxis ion apply lt string gt SS IIg Tir g gt onjoff on off LOG SSL EA OI Orb ac none all xygraph type lt int gt data scale scale scale scale scale type lt int gt xaxis lin xaxis log yaxis lin yaxis log yaxis all xygraph apply title main lt string gt title main auto car car title sub Strings title sub auto show Xxaxis onjotft Show Show Show Show Show range range range range yaxis on o axes onlof grid
122. on of label xaxi label yaxi ff E f S On Ore SON Ob Xaxis lt expr gt lt expr gt xax1s aut O yaxis lt expr gt lt expr gt yaxis aut O increment xaxis lt expr gt increment yaxis lt expr gt label xaxis lt string gt label yaxis lt string gt annotation apply zoom from lt expr gt lt expr gt scale lt expr gt lt expr gt zoom out zoom previous label label label label key e lt Suring gt lt string gt lt String gt lt int gt at lectrical from lt expr gt lt expr gt color lt int gt scale lt int gt from lt expr gt lt expr gt color lt int gt scale lt int gt to lt expr gt lt expr gt auto scale lt int gt lt int gt lt int gt at lt int gt SILVACO International key electrical at user lt expr gt lt expr gt key profile at lt int gt key profile at user lt expr gt lt expr gt key contours lt int gt at lt int gt key contours lt int gt at user lt expr gt lt expr gt key materials at lt int gt key materials at user lt expr gt lt expr gt key regions at lt int gt key regions at user lt expr gt lt expr gt key vectors at lt int gt key vectors at user lt expr gt lt expr gt key overlay at lt int gt key overlay at user lt expr gt lt expr gt COLO COJO QO LOP goo CONO Color Color Color COLO Color COLO QOO COOL label window lt int gt background lt int gt foreground lt in
123. overlay plots e Key type This sets the ways the keys or legends are drawn in plots Transparent the default allows the key box to show the plot underneath Opaque covers over any part of the plot under the key e Function label Determines whether functions appear on key legends as names i e Function 1 or as their definitions as shown on the Functions popup 7 19 11 Environment Tonyplot Properties Category Environment Mame nf user Frederic Loranger Login name loranger Group silvaco Host mrquiet Company name Project Apply Reset Dismiss EE SS e Name of user This is your name as known by the operation system when TONYPLOT starts This can be used in titles and footers by using the macro NAM e Login name This is the login name for the account currently being used This can be used in titles and footers by using the macro SUSR e Group This is the login group name of the account currently being used This can be used in titles and footers by using the macro GRP e Host Name of the workstation being used to run TONYPLOT which may not be the workstation used to display TONYPLOT This can be used in titles and footers by using the macro HST SILVACO International 7 65 VWF Interactive Tools e Company name This is the name of your company if any This information is not known by TONYPLOT so is blank by default This can be used in titles and footers by using the m
124. process to define other targets in the input deck Defining a Curve Value Target For curved targets you must enter one or more x y coordinate pairs The X value column on the worksheet corresponds to the x axis of the extracted curve The Target value column corresponds to the y axis You can do any of the following to enter x y coordinate pairs for curved targets e Insert pairs into the worksheet e Read in x y data from a TONYPLOT data format file e Do a combination of both Creating A Curved Target From Scratch Do the following to insert an x y value pair 1 Position the pointer anywhere in the target row and double click the SELECT mouse button to select that row The row then appears raised 2 Choose Edito X Y Data After Figure 6 15 A new row will be inserted after the selected row You can insert additional data rows either before or after any other data row Note Only the first row of a curved target shows the target name Figure 6 16 3 Enter X value and Target value values for the new row Repeat this process to define the entire curved target 6 14 SILVACO International DeckBuild Optimizer y Deckbuild Optimizer optex02 in opt edited alue 130 varse Les mm Ce 130 linear PP 150 linear WA 150 linear WA Figure 6 16 A Curved Target Creating a Curved Target From a Data File When a TOoNYPLOT data format file is on the disk that you want to use as an optimization target the OPTIMIZE
125. region ELECTRODE ID lt n gt ELEC ID Describes the region as an electrode setting the electrode number to n If n is not supplied the lowest unused electrode id number will be used WORK FUNCTION lt n gt Used only if electrode id is set to define work function for materials This is not currently being used by any simulators but may be used in future releases 3D Parameters Z1 lt n gt is the Z plane where region starts in microns for the 3D Mode Z2 n 1s the z plane where region ends in microns for the 3D Mode Examples ADD A 10 BY 10 MICRON BLOCK OF SILICON AS REGION 1 WITH THE NAME WAFFER DISPLAYED IN RED REGION ID 1 NAME WAFFER MATERIAL SILICON COLOR 0X30 A POINIS 0 0 420 0 LO 10 07 10 05 0 ADD AN ALUMINUM CONTACT AS ELECTRODE 1 USING THE NEXT AVAILABLE REGION NUMBER WITH THE NAME SOURCE USING DEFAULT COLOR REGION NAME SOURCE MATERIAL AL ELEC ID 1 WORK FUNC 4 28 POINTOO Osk dyad 40 x0 quel SET REGION 3 TO ELECTRODE 2 REGION NAME SOURCE MATERIAL AL ELEC WORK FUNC 4 28 POLNIS 972 LOr 1030 9 0 Di DELETE REGION 2 REGION DELETE ID 2 DELETE THE FIRST REGION NAMED SOURCE REGION DELETE ID SOURCE DELETE ALL REGIONS NAMED SOURCE REGION DELETE NAME SOURCE Replaces Cards AddRegion Region lt n gt Name lt c gt Electrode lt n gt Material lt ce gt Celor lt n gt 1Patter e lt n gt 1 X Points lt point2d_list gt Work
126. s home directory and a copy of the MANAGER configuration files is placed in the silvaco directory This directory is used for subsequent invocations and allows each user to customize their setup MASTER File and application manager 1 7 Directory usr jdoe Applications Die ck uid zi de anex12 in sica deck anex16 in E anexii 4 str SILVACO International anex18 n STOUT anexii str Mas kwiews sim deck anex14 in sica deck anex l n e anexii dei Printer D ck anex15 in STULL anex01_0O str 3 us anex 2 str E Compressor siri deck anex16 in 5 Se anex01_1 str 5 F anex 2 1 str SILVACO International 199 Figure 3 1 The Manager Window Wastebasket anex01_2str 5 TE anex 2 2str 5 VWF Interactive Tools 3 2 Using Manager The user interface of MANAGER allows easy use and access to the INTERACTIVE Toors and files Once started a window 1s displayed showing the current directory name and two large windows containing several icon images representing the available applications and files 3 2 1 File and Application Windows The upper window on the main display is the applications window All of the currently defined INTERACTIVE TOOLS applications are listed as a set of icons with the application name written beneath the icon Other useful applications and utilities may also be listed here Some of the applications normally liste
127. select the output that is to be modified and enter new SPC values into text fields provided Press the Return key in each text field to submit changes to the list If an output parameter has no defined SPC limits use the word None to indicate missing values To remove defined values enter the word None into the text field and click on the Return key When all desired changes have been made click on the Apply button to store the new values Values in the list are not stored until the Apply button 1s clicked Uses SPC Limits are used to monitor measured output values to ensure that these values stay within predefined boundaries and generate some warning when the boundaries are crossed Outputs generated by RSMs in ToNYPLOT can be compared to SPC Limits in a similar way As long as these values are defined the control lines can be added to any 1D RSM plot See RSM Display for details on how to add these SPC limits to a plot 7 26 12 Experimental Results Each output parameter modeled by an RSM has an associated experimental value that was measured when the process input parameters used in the model were set to their nominal values If no experimental value is given for an output or one needs to be changed choose Experimental Results from the Production popup s Define menu to display this popup Control Items The popup shows a scrolling list with a line for each output Next to the name of each output are four values Experimental r
128. settings includes quantities or options that are not present in the data for that level The display popups however shows all quantities from all levels For example one level may contain boron and another level just arsenic The display popup shows both boron and arsenic but if only boron is chosen only the first level is drawn 7 25 5 Identifying Data Data from separate levels can be identified by the overlay key This key indicates which profile or graph line corresponds to a certain data file The quantities plotted are identified with the same key used in single level plots Each level is shown in a different color line type for monochrome screens and each quantity with a different mark type The colors used are determined by the current set of Sequence colors See the Properties section to determine how to set these colors 7 84 SILVACO International TonyPlot Mesh plots when overlaid use the same color for each level Because of the large amounts of information that can be portrayed in a 2D Mesh plot the number of levels is limited to three For XYGraph and XSection plots the limit is practically unlimited 7 25 6 Level Names Each level in an overlay 1s named from the file from which its data was taken If needed these names can be changed with the Level names popup Choose Level names from the Plot menu to display this popup To change the name of a level select the old name f
129. skip to last frame e Repeat This is the item marked with a looping arrow When depressed playback repeats in an endless cycle in the direction determined by the play button pressed e Speed Three playback speeds are available Note that the new speed is not observed until a play button is pressed after the new speed has been selected To remove the Movie popup click on the Dismiss button Note Only one Movie tool can be displayed at once TONYPLOT can create automatic movie sequences from cutlines without repetitive use of the Cutline and Movie tools See the section on the Cutline tool for a description of this feature 7 16 5 HP 4145 Emulator The HP4145 Emulator is available for any graph plot Only one plot may be used with the emulator at any one time When this options is chosen from the main Tools menu the first selected graph plot changes to mimic the output of the HP4145 A HP4145 popup Figure 7 27 appears containing the controls that emulate the functions of the HP4145 Tonyplot HP 4 1 45 CURSOR MARKER H ERT CREATE SELECT DELETE SIZE OPTIONS LIME 1 LINE 2 RETICULE KEY QUIT Cursor yl Marker y 2 288 05 Line 1H v int 1 grad Line 2 v int 1 grad Figure 7 27 HP4145 Popup SILVACO International 7 43 VWF Interactive Tools The controls of the HP4145 popup are e Cursors The control section allows manipulation of cursors represented as plu
130. sources can easily be read into TONYPLOT Those who have their own sets of data already maybe from other software packages or from experimental results find this format useful since it allows the features of TONYPLOT to be applied to that data Data files can be compared to other files types as well This makes it simple to compare simulation results from Silvaco simulators with data obtained from real life experiments 7 23 2 Loading User Data Files TONYPLOT automatically recognizes data files in this format and so it not necessary to use any special command line options to load them They can also be loaded using the File Loader popup just like regular Silvaco files 7 23 3 Creating User Data Files Data files can be created in any manner From other programs filters or TONYPLOT features such as Export If needed you can also edit the files 7 23 4 Data Format Data files should be constructed in the following manner lt title line gt lt r gt lt c gt lt t gt lt title 1 gt lt title 2 gt lt title t gt esl lt xl 2 gt a a xlc lt x21 gt s e lt x2c gt cor L gt Se Ae sd SX c lt xri gt lt xr2 gt ire aede lt xrce gt title line can be any sequence of ASCII characters This is used as the main plot title and must be present r is the number of rows in the file This must be present but can be given as zero in which case TONYPLOT works out how many rows there are c is the number of col
131. statement Structure Mirror Light Source gate drain and substrate electrodes for the full device are now specified using an electrode statement for each of the polysilicon and aluminum contact materials electrode name gate x 0 5 y 0 1 electrode name source x 0 1 electrode name drain x 0 9 electrode name substrate backside The device structure is now ready for simulation by ATLAS It is good practice to save the structure at major milestones during the simulation The completion of the process simulation is a major milestone and the example input deck saves the structure to the file mos1ex01 0 str If you are performing simulation in parallel with reading through the tutorial you should now continue the simulation to the point where the structure is plotted by ToNvPLor The plot displayed by TONYPLOT should look like the plot shown in Figure 2 23 TonyPlot 2 4 0 Files View Plot Tools Print Properties Help ATHENA Data from mos1ex02 O str Materials Silicon Sio2 Polysilicon Aluminum Electrodes 0 2 0 3 0 4 0 5 0 6 0 7 0 6 0 9 Microns SILVACO International 1995 Figure 2 23 Process Simulation of the Transistor Structure 2 24 SILVACO International Tutorial 2 7 Device Simulation Now calculate an Id Vgs characteristic for the structure with Vds held constant at 0 1V After performing the calculation extract the parameters Vt Beta and Theta which are often used to characterize th
132. stored phase or transmittance values they are assigned the values currently set as the default phase and transmitter on the key panel To set the offset check the box The default 1s no offset The current MASKVIEWS layout is saved to the library by clicking on the Save button The newly created structure is named in the Name field which may or may not be a currently existing structure name GDSII files are often very large and operations on them are extremely slow In an attempt to speed up access MASKVIEWS loads the complete file into memory and perform all operations on the copy held in memory Sometimes it is impossible to load the complete file In which case the warning message File cache failed this may take some time is displayed and operations are performed directly to the named file which is much slower The minimum feature size that is resolvable with MASKVIEWS should not be less than 1 10 000 times smaller than the size of the whole GDSII structure That is structures imported into MASKVIEWS should typically be less than one millimeter along the longest edge Technology files are used to add names and other pertinent information to layout layers imported from GDSII files Gn which layers are represented simply by their number Selecting Files gt Import Technology files causes a File Loader popup to be displayed which allows the name of a technology file to be specified The file specified here is then be used in conjuncti
133. subpanels are shown Each subpanel can be used to display quantities i e up to four polar curves can be plotted Two quantities are used to specify each curve By default the quantities real and imaginary are used when the data is not converted If the data 1s to be converted the quantities R radius and A angle are used The data should only be converted if it appears in r theta form in the structure When quantities are present that TONYPLOT recognizes as being usually displayed on polar charts TONYPLOT tries to automatically select an i or A quantity whenever you choose an r or R quantity The real or radius quantity can be logged before plotting and the angle quantity can be specified in terms of degrees or radians Choose the setting which corresponds to the data in the structure There are some options to control the polar chart drawn The chart can be drawn proportionally 1 e concentric circles appear as circles even if the plot window is not square and radial labels can be shown in degrees radians 1s the default The radial lines can be drawn at various intervals choose the interval desired from the item marked Radials 7 11 3 Smith Charts When the graph type is Smith four subpanels are shown Each subpanel can be used to display quantities 1 e up to four Smith curves can be plotted This is basically the same as Polar charts described previously Two quantities are used
134. subwindows are the execution control buttons These buttons allow complete interactive runtime control of the simulator and are as follows e next This sends the current line to the simulator and advances the current line by one If a simulator is not running one will be started line This resets the current line to the selected line e stop at line This sets the breakpoint to the currently selected line e stop now This stops execution after completing the current command and the associated history file s save command if appropriate e cont This continues the simulation from the current line to the end of deck or to the breakpoint if any If not running it also starts the simulator e run This runs deck from the top to the bottom or to the breakpoint if any If not running it also starts the simulator e quit This sends a quit statement to the simulator paste This sends the current selection to the simulator to be executed e init If the selected text is a file then the correct simulator is initialized with the file Otherwise the selected line is used to initialize from history e pause unpause This pauses unpauses the running simulator e clear This unsets the current breakpoint e restart This restarts the current simulator if it s not running e kill This kills the simulator 4 4 2 Text amp TTY Subwindows Although the primary means of building and modifyi
135. temporary files when killed the temporary files will not be removed and will remain in the current directory or in tmp It uses the Unix kill signal 9 On the other hand SIGINT allows the simulator to remove its temporary files and perform any other required actions before it terminates It uses the Unix interrupt signal 2 We recommend that you use SIGINT for normal use If the simulator does not seem to die properly under some circumstances switch to the forced kill of SIGKILL Monitor convergence if enabled monitors the output from ATLAS and looks for messages indicating that the simulator has failed to converge If convergence failure is detected an error message is displayed and the simulation 1s halted No more lines from the input deck are sent to the simulator and the simulator 1s left running and displaying its interactive prompt You should enable this option to stop ATLAS runs at the first sign of convergence failure You should disable this option for doing snapback characteristic simulation which actually depends on convergence failure as a precondition to switching boundary conditions and continuing the simulation Monitor Strings if enabled monitors the TTY output for strings selected in the Monitor String List Figure 4 13 If a selected string 1s detected a message 1s displayed and the current simulation 1s stopped at this point Note the simulator stays active System Commands if enabled allows DECKBUILD to
136. than or equal to 180 line straightening the two line segments are combined by removing the joining point ALIGN POINTS lt BOOLEAN gt If a boundary point joins two almost horizontal lines the point can be moved slightly in the horizontal direction to align it with other points This is also true in the vertical direction Replaces Card BoundaryConditioning AutoConditioning lt c gt MaxSlope lt n gt MaxRatio lt n gt RoundingUnit lt n gt LineStraightening lt n gt Y AlignPoints lt boolean gt NoSet NoApply See Also MESH CONSTRAIN MESH SILVACO International 9 61 VWF Interactive Tools 9 13 5 CONSTRAINT MESH Set limits constraints on triangles created during mesh and refine operations Preferred Abbreviation constr mesh Syntax CONSTRAIN MESH GLOBAL REGION ID lt N gt REGION NAME lt C gt MATERIAL lt C gt MATERIAL TYPE lt C gt x1 lt N gt yl N x2 lt N gt y2 lt N gt UNDER REGION lt C gt UNDER MATERIAL lt C gt UNDER GATE DEPTH lt N gt DEFAULT MAXIMUM ANGLE lt N gt A MAXIMUM RATIO lt N gt MAXIMUM ADJACENT lt N gt MAXIMUM HEIGHT lt N gt MAXIMUM WIDTH lt N gt MINIMUM HEIGHT lt N gt MINIMUM WIDTH lt N gt Description Mesh constraints are used to determine the size and shapes of triangles during the meshing phase Weaker constraints create a less dense mesh and may be used to improve execution tim
137. the file already exists select it from the scrolling list use the Filter to screen out undesired files from the list When the Save button is clicked on the set file is created Confirmation is required if the file is overwritten 7 24 2 Loading To load a previously created set file locate the file using the Set Files popup and click on the Load button After a short while the view 1s updated Additionally set files can be loaded from the command line with the set option If an error occurs when loading the file a warning notice appears When a set file is created while there are multiple plots in the view it is important that the same plots are present when the set file is loaded since a set file cannot store information about duplicated or deleted plots For example suppose TONYPLOT 1s started with the name of one data file Oo tonyplot diode str When the plot appears you can show contours in one window and the mesh in another The plot is duplicated to allow this and the appropriate display parameters applied to each plot Then a set file 1s saved called for example setup set You then quit from TONYPLOT At a later date if the same view 1s to created automatically you must enter tonyplot diode str diode str set setup set because there were two plots of diode str when the set file was created If only one file name were given the set file would not be loaded completely Similarly when plots are deleted rest
138. the least or the greatest slope and returns either the slope of this tangent or its x intercept Or LES Mercat 7 area from CURVE ARG where x min lt EXPR gt and x max lt EXPR gt Determines the area under the specified curve between the x limits defined by the min and max expressions x val from CURVE ARG where y val lt EXPR gt and val occno lt EXPR gt y val from CURVE ARG where x val lt EXPR gt and val occno EXPR Determines the x or y ordinate on the curve where the corresponding y or x ordinate is equal to the constant expression for the occurence Specified Linear interpolation is used between points on the curve grad from CURVE ARG where x val lt EXPR gt y val lt EXPR gt SILVACO International DeckBuild Extract Determines the gradient at the first x or y ordinate on the curve where the corresponding y or x value is equal to the consent expression Linear interpolation is used between points on the curve lt CURVE OLNGEE LUNE curve AXIS FUNC bias x AXIS FUNC ldcapacitance vg lt EXPR gt vb lt EXPR gt bias ramp vg vb bias step lt EXPR gt bias start lt EXPR gt bias stop lt EXPR gt temp val expr soi gss lt EXPR gt workfunc lt EXPR gt x val lt EXPR gt y val lt EXPR gt region lt QSTRING gt xmin lt EXPR gt xmax lt EXPR gt E 2 HP E O Default values vg 0 0 vb 0 0 bias ramp
139. the option on the file loader popups to display only files matching the filter masks or also list all of the directories contained in the current directory e Request filename specifies whether a popup will appear for each cutline that requires a filename e Cutline Grid preview sets cutline display options When you load a cutline file for viewing into MASKVIEWS and you set this option to show line only then only a line on the layout will appear If you set this option to show masks also then the view also shows a mask summary display e Mask polarity specifies whether the dark clear field of the Layers popup refers to the opaque clearness of the mask elements or the mask field Changes made to mask polarity do not take effect until MASKVIEWS is restarted Undo last action enables or disables the undo command on the main Edit menu Undo is achieved by saving a temporary file between each edit action which may not be desirable 1n mask editing if saving the whole layout requires too much time 10 8 3 Display Properties The display properties alter the physical layout of the main MaskViews screen e Key panel specifies whether the key panel is displayed on the left or the right side of the layout window Control panel selects whether the control panel containing the function buttons and menus 1s displayed e Screen menu When set to basic pressing the mouse MENU button on the layout screen displays the Edit menu only When set to
140. the plot Display popup but the vectors do not have to be displayed for the tracers to work Tracers placed This indicates the number of tracers that have been placed on the plot and the number of tracers available e Animation control Three video like controls are provided to control the animation of the markers These are Mp which return all markers to their starting points kl which starts the markers and e which stops them at their current positions e Speed There are three speeds available for the animation slow medium and fast Select the appropriate speed To change the speed while the markers are moving press again Calculate When you have placed all the markers you wish to animate click on the Calculate button TONYPLOT then traces out the path of each marker Progress is reported in the lower left corner of the main TONYPLOT frame When all the paths have been calculated the markers can be animated Markers can be placed anywhere within a vector field by clicking at the position where you want a marker to start The counter on the popup indicates how many have been placed To remove a marker press the SHIFT button and click near to the marker to removed the one nearest the pointer is erased and if its path has been drawn that too is erased e Setup Press this to see the small panel of setup options available in the Tracers tool These are explained below 7 46 SILVACO International
141. the syntax below For more information see Appendix A Models and Algorithms extract start materiali Silrcon mat oceno 1 bras 0 2 bilas step 0 08 bias stop 5 0 x val 0 3 region occ 2 extract done name iiP curve bias p ion material Silicon mat occno 1 x val 0 3 region occno 2 egran 4 0e5 betap 1 0 betan 1 0 anl 7 03e5 an2 7 03e5 bn1 1 231e6 bn2 1 231e6 apl 26 71e5 ap2 1 582e6 bpi 1 693e6 bp2 1 693e6 outfile extract dat SIMS Curve Extract the concentration profile of net doping in the top first layer of silicon The output curve is placed into the file SIMS dat 5 26 SILVACO International DeckBuild Extract extract name SIMS curve depth impurity Net Doping material Silicon mat oceno 1 x val 0 1 outfile SIMS dat SRP Curve Extract the SRP Spreading Resistance Profile in the top first silicon layer The output curve is placed into the file SRP dat extract name SRP curve depth Sro materials Silicon mat oceno 1 x val 0 1 outfile SRP dat The following command will calculate the SRP Spreading Resistance Profile in the top first silicon layer using a specified 100 etch steps of uniform size The output curve is placed into the file SRE LOO Cat extract name SRP100 curve depth srp material Silicon Mat occno n step l00 x val 0 5 outfriles srpl00 dat Note Where n step is not specified the default is 50 etch steps of variable size dependent on the gradient of net concent
142. then click on Apply A similar set of X and Y coordinates should be used to define a source contact but from Z 1 0 to Z 1 1 The remaining difference between the 2D and 3D versions of DEVEDIT is the Z plane mesh Right click on MESH then select Z planes Mesh planes in the Z plane are automatically inserted at material boundaries These mesh planes are listed in boldface and cannot be modified or deleted Additional mesh planes are included and are listed in italics which can be edited You have three methods of controlling the Z plane mesh e Max Plane Spacing which limits the distance in the Z plane of the mesh e Max Spacing Ratio which 1s the ratio of the spacing from one neighboring mesh plane to the next Or e Selectively add modify and delete specific mesh planes by entering the location and spacing of the plane DEVEDIT3D however overrides modifications you have entered to maintain the Max Plane Spacing or Max Spacing Ratio constraints SILVACO International 9 29 VWF Interactive Tools There are no 3D graphics in DEVEDIT3D To view the 3D structure after meshing a structure file should be saved This file can be loaded and displayed in TONYPLOTSD DevEdit 3D 2 4 4 A mos2ex4test str SEI File y Regions Impurities y Mesh Help 7 ile v Regions v Impurities v Mesh v Help v Z Planes Y Max Plane Spacing 1 5000 Microns Max Spacing Ratio 1 2000 Z planes 9 Spacing Add Modify Delete Lo
143. to simulate a simple LDD MOS process e Use TONYPLOT to view the results generated by ATHENA e Run ATLAS under the control of DECKBUILD to simulate the MOS structure generated by ATHENA e Use TONYPLOT to view the results generated by ATLAS e Use DECKBUILD to extract device parameters from results calculated by ATLAS The tutorial does not attempt to describe the detailed use of the ATHENA and ATLAS simulators The user manuals for ATHENA and ATLAS document the features and capabilities of these tools and include chapters that help new users get started Before you can work through this tutorial you must have ATHENA ATLAS DECKBUILD and TONYPLOT installed on your system If you are unsure about the status of your software installation see the SILVACO INSTALLATION GUIDE or ask your local system administrator for assistance The principles of using DECKBUILD and TONYPLOT shown in this tutorial are valid for users of other SILVACO simulators SILVACO International Tutorial 2 3 Getting Started To start DECKBUILD enter deckbuild amp at the system prompt and press the return key It may take several seconds for DECKBUILD to load If DECKBUILD does not appear or if you receive error messages at this point ask your systems administrator to check the software installation or license When DECKBUILD starts a DeckBuild Application Window appears on your screen that looks similar to Figure 2 1 version numbers and directory nam
144. using the datafile filename syntax Use the file to compare the results from a large number of runs For example if using DECKBUILD s built in optimizer the file gives a concise listing of all the results as a function of the input parameters The extract results file is created in the current working directory 5 7 1 Units e Material thickness angstroms e Junction depth microns e Impurity concentrations impurity units typically atoms cm3 e Junction capacitance Farads cm2 e QUICMOS capacitance Farads cm2 e QUICKMOS 1D Vt Volts e QUICKBIP 1D solver see the QUICKBIP section e Sheet resistance Ohm square e Sheet conductance square Ohm e Electrode voltage Volts e Electrode internal voltage Volts e Electrode current Amps e Capacitance Farads micron e Conductance 1 Ohms e Transient time Seconds e Frequency Hertz e Temperature Kelvin e Luminescent power Watts micron e Luminescent wavelength Microns e Available photo current Amps micron e Source photo current Amps micron e Optical wavelength Microns e Optical source frequency Hertz e Current gain dB e Unilateral power gain frequency dB e Max transducer power gain dB If desired you can perform whatever unit shifting required by adding the appropriate constants in the device extract tests and saving them as the default The units are always printed out along with the extract results for built in single value extr
145. v Properties v Help v Section 1 from example2 str 0 5 0 to 0 5 2 Arsenic cm3 Boron cm3 Het Doping cm3 Page 2 of 2 SILVACO International 1996 Figure 9 48 Cutline Made in the Vertical Direction 9 58 SILVACO International DevEdit 9 13 STATEMENTS 9 13 1 Overview This chapter contains a complete description in alphabetical order of every statement and parameter used by any of the DEVEDIT products The following documentation is provided for each statement e The statement name e The syntax of the statement e A list of all of the parameters of the statement and their type e A description of each parameter or group of similar parameters e An example of the correct usage of each statement 9 13 2 Cards And Parameters Card Syntax PARAM required parameter PARAM optional parameter N integer or floating point number lt C gt user defined string can be quoted by or lt BOOLEAN gt the strings true false yes no on or off In the case param param can be used for param true and param or param can be used for param false lt POINT2D gt a 2d point ex 0 5 3 0 note Points are in Microns lt POINT2D_LIST gt a list of 2d points ex 0 0 1 0 1 1 0 1 0 0 quotes must be used if more than one point is in list PARAM1 PARAM2 parameters are associated with each other PARAM PARAM2 must supply param1 or param2 but not both PARAM PARAM2
146. v2 1 521418 08 v3 1 3095 8 08 E Field Y v1 1 85BB84e v2 4 0870be v3 4 1835838 amp e 07 Photogeneration Rate v1 2 28bB84e 1 vz 5 77383 amp 1b vi b 7383e 1b Find 7 Dismiss Figure 7 25 Probe Popup Probe Coordinates The panel at the top of the tool popup shows the position where the probe was last placed Geometry Info The second panel shows information about the triangle in which the probe was positioned The internal index is given for the triangle itself and for each of its three vertices The actual coordinates of the corners are also displayed Impurity Values The list shows the impurities that are present in the data Before the probe has been placed no values are shown but as soon as the probe is positioned the values of each impurity is show in at each triangle vertex The values shown are the actual values linear scale There is a property in TONYPLOT that causes the probe to display log values of impurities that are sometimes seen on log scales See the Properties section for more details Find The Find menu allows the probe to work in reverse Enter the number of the triangle or point to be probed into the appropriate text field and choose the required option from this menu The triangle is indicated by a brief sequences of flashes and points are marked by the probe marker SILVACO International 7 41 VWF Interactive Tools moving to the point on the plot Alternatively choosing Obtus
147. val k grad from curve where x val k For details on Extract curve manipulation syntax see Section 5 3 1 Extract Syntax For instance using the BJT curve example above you could find the maximum of Ic Ib vs Ic or maximum beta by writing extract name max beta max curve i collector i collector i base max min and ave all work on the Y axis of the curve The sloped lines and intercepts often work together The primitives minslope and maxslope can be thought of as returning a line Extracting a line by itself has no meaning so three other operators take a line as input The operators are slope which returns the slope of the line and xintercept and yintercept which return the value where the line intercepts the corresponding axis For instance a Vt test for MOS devices looks at a curve of Vg x versus Id y and finds the X intercept of the maximum slope Such a test would look like extract name vt xintercept maxslope curve abs v gate abs i drain Some Vt tests take off Vd 2 from the resulting value You could write extract name vt xintercept maxslope curve abs v gate abs 1i drain avet tvil dratnu 2 Note that the last example uses ave v drain 72 The max min and ave operators can be used on both curves extract name Iave ave curve v gate i drain and also on individual curve axes extract name lave ave i drain or even on axis function
148. weekends The knowledge of experienced engineers disseminates through an organization in the form of easily manipulated library objects that contain tested descriptions of process descriptions and electrical tests Productivity is also enhanced by the encapsulation of state of the art techniques for experimental design and data analysis The bottom line benefit of the VWF AUTOMATION TOOLS is that it helps substitute simulation which is relatively quick and cheap for experimental split lots which are time consuming and expensive SILVACO International Chapter 2 Tutorial 2 1 Overview This tutorial shows you how to use DECKBUILD and TONYPLOT to perform effective process and device simulation on either a UNIX or Linux platform The VWF INTERACTIVE TOOLS make it easy to access the capabilities of the ATHENA process simulator and the ATLAS device simulator The VWF INTERACTIVE TOOLS and their functions are as follows e DECKBUILD interactive run time environment e TONYPLOT scientific visualization e DEVEDIT structure specification and meshing MASKVIEWS IC Layout editor and interface OPTIMIZER black box optimizer Two of these tools DECKBUILD and TONYPLOT are intended for use by all users of ATHENA ATLAS MERCURY CLEVER and other SILVACO simulators DECKBUILD provides convenient ways to specify problems run simulations switch between simulators extract parameters from simulation results and invoke o
149. width of the beam Choose the required option with this item Color function The light beam rays can be colored in a variety of ways Wavelength colors the rays to match the wavelength Wavelengths less than ultra violet are shown as magenta and those above infra red as pink Power assigns a color from the chosen color set dependent on the beam intensity Beam number assigns one color to each beam Reflection Index assigns the color of a ray according to the number of times it has been reflected e Colors Allows a color set to be chosen These are the same as those available on the Contour and Vector popups SILVACO International 1 23 VWF Interactive Tools e Maximum reflection This can be used to limit the number of rays drawn Only rays that have been reflected a number of times equal to or less than the number shown are drawn Junction You can plot depletion region edges from device simulations Figure 7 13 as well as metallugical junctions Depletion factor is the value of the ratio of majority carriers to doping used to determine the depletion region edge Tonyplot Junctions Show Junction Depletion Edges Depletion Factor 0 5 Apple 1 Reset Dismiss Figure 7 13 Junctions Popup 3D A structure that can be contoured can also be elevated by choosing the 3D option and defining some parameters from this popup Tonyplot Three D Elevation None SAR aa X lin Leg Y Lin Log i Lin Log
150. windows When in Scattered mode windows can be resized by dragging their edges Dragging a corner allows resizing in both the X and Y directions at the same time To move windows hold down the SHIFT key and then drag the edges or corners With a combination of moving and resizing any window configuration can be created Frame Size sets the size of the main TONYPLOT window If set to Custom any size can be given If the properties are saved with the Save Defaults button then the custom size is used each time TONYPLOT is started Panner Jump sets the amount of new plot exposed when a zoomed plot is panned with the zoom panner The fractions shown are fractions of the window size 7 58 SILVACO International TonyPlot 7 19 4 Tool Settings Tonyplot Properties Category Tool settings e Movie Screen width 500 height 500 Make full screen 1 Cutline X axis Relative Absolute Interface Probe impurities True value Log of value Prabe refresh Off On Ruler readout Off on Apply Reset Dismiss BS Figure 7 37 Tool Settings e Movie screen size The dimensions of the Movie tool playback window can be customized here Click on the button marked Make Full Screen to automatically enter sizes that match the size of the entire screen These sizes do not affect any movie currently displayed but only movies created after this change has been applied e Cutline X axis There are three methods
151. with this example into the DECKBUILD text edit region This action also causes other files related to this example to be copied into your current working directory Click on the push pin to dismiss the Examples window The text edit region now contains all the commands required to perform process simulation extract information of interest from the simulated results view the simulated results perform device simulation and extract device parameters from the simulated results Take a moment to scroll down through the text in the text edit region There are a series of ATHENA statements followed by other statements including DECKBUILD extract statements TONYPLOT statements a go atlas statement and some ATLAS statements SILVACO International Tutorial 2 5 Process Simulation The first portion of the input specifies process simulation of an LDD MOS transistor Now start running this portion of the input deck This section of the tutorial describes the following activities e Running a simulation e Displaying a structure e Using the history function Creating two structure files for comparison e Overlaying two plots e Using TONYPLOT to produce 2 D plots e Generating interactive cutline plots e Extracting some process parameters 2 5 1 Running a Simulation The runtime control buttons Figure 2 4 are located between the DECKBUILD text edit and tty regions These buttons are used to control the way a simulation runs interac
152. y j Bi Page E Colors Rainbow 10 Level widths on oft Apply Reset Dismiss Functions Figure 7 10 Contours Popup Just select contours from the Mesh Display popup and contours are plotted when the Apply button is clicked on The Contours popup appears if contours are selected on the 2D Mesh popup and the Contours button is clicked on The popup is divided into subsections as follows e Set number This subsection shows which set is currently being edited Set 2 will only be plotted if set 1 is plotted and set 3 will only be plotted if set 2 is plotted For a set to be plotted the quantity see below must be anything other than None e Quantity Choose the quantity to be contoured If the range items see below are set to Auto the corresponding minimum and maximum text fields are updated to show the range of the new quantity If None is selected the current contour set is not be plotted One of two functions may also be chosen Functions are defined from the Functions popup e Materials The part of the structure on which contours are drawn can be limited to regions of a certain material If no materials are selected in the list this is treated as all being selected the default If the contours should not be plotted on any material set the Quantity to None see above e Range The group of items on the right part of the popup control the range of the data through which contours are plotted The maximum t
153. 0 0 0001 gt 100000 EE i e A des AAN Pons EAS DU eee dE aoe TEE Lesser EES Done Figure 9 11 Mesh Constraints Menu Select the upper AlGaAs region Again the same mesh criteria are available for control for this single layer Change the Max Height to 0 01 It is strongly recommended that each material layer or region have several such as four mesh layers You can also adjust parameters for other layers It is recommended in this example to increase the mesh density in the semiconductor layers such that several mesh layers exist in each region Manual Refine Box Also under the Mesh pull down menu is the Refine Box in which the Refine X Refine Y Refine Both and Unrefine options exist This meshing does not work within MeshBuild but rather doubles the density of the mesh in the area specified in the X Y or both directions or reduces the mesh density by half However because these mesh changes are not easily reproduced this action is not recommended Saving The File The file can be and should be saved in two formats the structure file and the command file The structure file is a format used by other Silvaco programs including TONYPLOT and ATLAS so it is necessary to save the structure file for continued device simulation The command file is a list of the instructions used by DEVEDIT to create the structure and the mesh To make additional changes at a later time save a command file so that the original s
154. 0 1 Setting The Mesh Controls To create a mesh the first step is to set the meshing controls This is accomplished by setting the Meshing Parameters To do this pull down the Mesh menu and choose the Mesh Parameters item A new control panel appears on the right side of the DEVEDIT base window 9 10 2 Base Mesh Parameters Base Mesh Parameters are a guideline to create a mesh that fit the structure Set the width and height to 0 2 Microns Boundary Conditioning controls simplification of the input structure When the structure is first read in all the original boundary points appear as red dots Boundary conditioning moves these points slightly or eliminates them if the points are not needed At this point click on Apply It may be noticed that some of the red dots have disappeared Next set the refinement parameters Pull down the Mesh menu and select the Refinement Impurities item This panel controls which areas have a finer mesh then the others based on the value of the impurity Note Refining on impurities only takes place in the Semiconductor region 9 10 3 Refining On Impurities To cause refining for all doping especially at impurity junctions pull down the Add menu and select Net Doping Next to cause a reasonable number of triangles in the channel under the gate again pull down the Add menu and this time choose boron To make more triangles the sensitivity of boron should be set to 0 2 on the lower part of the Refinem
155. 0 5 1 0E 09 0 6 1 0E 08 PESO 0 8 5 0E 07 0 9 8 0E 07 1 0 8 9E 07 Display User data files are treated in the same way as normal XY Graph plots in TonYPLor This display popup for these plots is exactly the same as the Graph display popup In fact once loaded into TONYPLOT there is no difference between these two type of data at all SILVACO International 7 81 VWF Interactive Tools 7 24 Set Files When a plot has been set up so that it displays the desired set of information by use of the display popups labels annotation and so on 1t 1s possible to save this information into a set file so that the display can be recreated automatically by TONYPLOT A set file contains instructions that tell TONYPLOT the steps needed to recreate the same display that was visible at the time the set file was created Thus when the same data files are loaded into TONYPLOT at a later date or into a different TONYPLOT loading the set file avoids having to go through all the popups again By convention set files usually have a suffix of set which denotes them as set files The Set File Loader uses a set default filter 7 24 1 Creating To create a set file the Set Files popup is used accessed from the main File menu This popup looks similar to the File Loader except that it has both a Load and a Save button Move to the directory where the set file 1s to be created and enter the name of the desire file into the field marked File name If
156. 0995e 05 A EXTRACT extract name P Ilins P Il1n 21 997486 05 A EXTRACT extract name P Isatm P Isatm 0 000277364 A EXTRACT extract name P Isats P Isats 0 000276221 A EXTRACTS Quit UTMOST gt quit UTMOST finished KKK END KKK SILVACO International param Ilinm param Ilins param Isatm param Isats 4 55 VWF Interactive Tools 4 13 SmartSpice Interface The SMARTSPICE interface allows SILVACO S circuit simulation program to execute within DECKBUILD and the VWF AUTOMATION TOOLs The interface reads through the whole deck substituting any variables that have been set The actual simulation does not occur until the solve outfile lt rawfile gt is reached in the simulation deck The output rawfile is a Data Format file that can be visualized in TONYPLOT or used with extract statements to obtain required measurements as shown below extract init infile spice dat extract name curvel max curve da value vin da value power extract name curve2 max curve da value 2 vin da value 2 power These extract statements will return the maximum of power for the first and second data set in the file spice dat 4 56 SILVACO International DeckBuild 4 14 Internal Interface The Internal interface is provided as a split point area for Device simulation only experiments using VWF AUTOMATION TOOLS This interface only accepts certain DECKBUILD statements set tonyplot extract go source
157. 1 7 4 28 Execution Control BreakDOIMS ege eege EE 4 28 EE ge 4 28 Soler e Ha MR 4 27 See also DeckBuild Initializing the Simulator sese eee 4 29 Pausing Stopping and Restarting the Simulator 4 29 Setin LINES iii 4 28 Execution Control Buttons Stepping Through and Running the Deck 4 28 Experimental EE gedet Ee 1 7 See also Advanced Features Automation Tools Experimental Results Control Helms EEN 7 91 SOS ee eebe 1 92 EE ae ne a ane A 5 1 5 38 Customized Statements cccccccececececececcccecececaeaeaeneaeees 5 7 Index 3 VWF Interactive Tools Device Extraction 5 29 FAME REEL 5 38 MOS DEVICE T6Sls E 5 36 PROCESS EXIIACHOL EE 5 2 QUICKBIP Bipolar te exisse isis taste egi tav te idee ten 5 40 A AE E AAAA EE EEE EE ETETA 5 37 Using WANT H EE 5 43 Extract Features Extract VE 5 38 Extraction and the Database VWF 5 39 Min and Max Cutoff Values 5 38 Multi Line Extract Statements eee 5 39 Variable Substitution aao eqie Ee 5 38 EXIFACUOR ee a ee 5 29 F Failure Analysis RGSUIEPIOU eebe erer 1 88 SETUD ra a 7 87 Field Dependent Mobility Model A 3 File Control Command PIS xus cete eie ni eee oe ed pde ie et 9 6 Silvaco Standard Structure Files eese 9 5 Silvaco Standard vs Devedit
158. 10 USING Extract WII ALAS arcada mias 5 43 vili SILVACO International Table of Contents Chapter 6 DeckBuild Optimizer 00 ccc cece cece mmm mm mmm mmn 6 1 BEIEN nr 6 1 MMe eel ON e E ee renner Eo pu ese aa LR LUE gera ahs aa eee m Eu EE 6 1 SN AMNES Nero VE 6 1 56 2 Using T fie ODUMIZO rra ra aio 6 2 sso Me CL Ur PT P 6 2 0622 IheXOpumizel WINDOW s rum aca ttt uti qur ea Up Rp ut ea occa den an qubd a eios 6 2 020 UPtUMIZa e EE 6 3 EIERE de Eet 6 3 xd cli me PEUT 6 4 6 9 Knell BEE 25 23 355 9 99 90879 9 228 prada ROS E eee sees Qd a URDU P eau Ed URL und 6 4 6 9 2 Deleting Paramet 82s 42 doe eni o rota d dI RR tia da eate ei ioquit d dd i us 6 6 033 EQUINA Palat e OT oci cia eat tica ood coe nate vat auld OR ot e dedo al acad Nel ds 6 7 6 3 4 Linked TEE 6 9 6 35 Parameter DEURS EE 6 10 6 3 6 Copying Parameters To he Deck to Ip be E ER he bob iia 6 10 6 3 7 Enabling Disabling Parameters 0 ccc IRR 6 10 Seille EE 6 11 AO CNS e eher 6 12 SE AGING KC EE 6 12 042 Deling A Tael cut bove haberc E e dit y PES bau bade bel ye peed Ead a 6 16 OAs Ealing EE 6 17 6 4 4 Enabling Disabling Target 0 ccc cece RII 6 18 674 52 Folding COMWMNG EE 6 19 5 9 SElUD EE 6 20 A A PEE A IE 6 20 052 Eding ele VANES asias arica oa recabada 6 20 65 3 SAVING INE SCD ANA acetals PRR oe eee Aas 6 20 CREMER eeh 6 21 A eet ee ara erases 6 21 0 7 esla NE AE 6 23 SE KREE 6 23 STE E EE 6 23 6 6 Worksheet EQHING EE 6 24 so
159. 20 deposit polysilicon deposit poly thick 0 3 divisions 6 min space 0 05 Implant to dope polysilicon implant arsenic dose 5e15 energy 50 Pattern the poly and name the electrode Piask name POLY etch poly dry thick 0 4 strip ATHENA ATHENA Implant to dope polysilicon ATHENA implant arsenic dose 5e15 energy 50 ATHEN A gt ATHENA Pattern the poly and name the electrode ATHENA HH mask name POL ATHENA depo barrier thick 0 10 ATHENA etch barrier start x 0 100 y 20 ATHENA etch cont x D 100 y 20 ATHENA etch cont x 0 801 y 20 ATHENA etch done x 0 801 y 20 ATHENA etch barrier start x 1 801 y 20 ATHENA etch cont xs D I y 20 ATHEN A atch cont ve Ef uz Figure 4 29 DeckBuild Main Window If structure files are saved after masking and electrode steps they must be saved after the autoelectrode statement and not in between the mask statement and the autoelectrode statement Otherwise the structure file does not contain the electrode information which is inserted by the autoelectrode statement In this case the only way to add it would be to go through the masking operation a second time as shown in the following example mask name POLY etch poly dry thick 0 4 Su 39 autoelectrode struct outf poly str Do not do this mask name POLY etch poly dry thick 0 4 Strip Struct outli poLv sutr SILVACO International 4 45 VWF Interactive Tools aut
160. 3 DEENEN eet es EE pM be es ir brea 4 64 A a a e a a e a a a E a 4 65 lg EE 4 65 4416 0 TE EESE ANG MEN Die EE 4 67 4 16 90 LOOP L END and LMODIFY sucia trar RN adem es sue meee Aere EE 4 67 2 16 10 MASS EE 4 68 AO T I AE n tein dax bruto dubie mates Pa ted i dat dL exe pedet d Et pdt 4 69 A as E A LUE cL E er a UM TL E 4 70 e Kee E LEE 4 72 A A II aE 4 73 Mi EE 4 74 41610 TONYPLO sr 4 75 417 Environment Variable5 EE 4 76 4 16 EFFOMMCSSAGES EE 4 77 4 18 1 Text Subwindow Error Messages 0 ccc cece eet cette eee eee eneennees 4 77 4 18 2 TTY Subwindow Error Messages 4 77 SILVACO International vii VWF Interactive Tools Chapter 5 DeckBuild Extract EEUU T UC LE EET 5 1 dl UVM W radiata EE 5 1 5 2 Process EXTACION ira paa da 5 2 5 2 1 Entering a Process Extraction Statement EE 5 4 5 2 2 lee ER 5 5 5 3 Customized Extract Statements EE 5 7 EEN Oi Coa ce tee et Se re ee eee re eee EE 5 7 eelere eben 5 20 5 3 3 Examples of Process Extraction 0 cc ccc teen eee RI 5 21 54 Device EXITACIOD ege shed s E Ee d data OE yay 5 29 DAT PMG TEE 5 29 5 42 Curve ManIDUIANON EE 5 31 6 43 BEAM ci eos Bore o Reb coed PES edet Lhe agro Ke uides 5 32 5 5 General Curve EE 5 33 A Gelli EE EE 5 33 5 5 2 Min Operator with Curves 0 ccc ccc cece erent I HH HI 5 33 5 5 3 MaX Operator WI GUNES tic dd caida darian tad 6 sa do eda dedo 5 33 5 5 4 Ave Operator with Curves 0 ccc cece cece eee IH mms 5 33 55
161. 39 VWF Interactive Tools right and the bottom left corners of a box A corner can be moved by holding down the left hand mouse button at the corner to be moved while dragging the mouse Thus modifying an existing box 1s simple so that placement can be very accurate A box can also be placed by defining the coordinate points of the boxes sides These fields can be defined by filling in the Start X Start Y End X and End Y text field entries This feature 1s often useful for more exact placement The position of a box 1s only fixed when the Apply button 1s clicked on the main doping control screen 9 8 4 Doping Source Attributes Doping can be defined to roll off 1n perpendicular directions to the source boundary either a line or a box These attributes are simple analytical expressions that have traditionally been used in the description of semiconductor devices These functions can be listed as follows Gaussian e Error Function e Linear e Logarithmic e Exponential Constant e Step function Each of the functions refer to the way the doping distribution decays with distance from the edge of the doping source box or line 9 8 5 Deleting Source Objects A doping source object can be deleted by selecting the object from the list on the top level menu then selecting the Delete option from the Impurities menu A selected object is surrounded by a red line on the screen 9 8 6 3D Doping Three dimensional doping objects can be defin
162. 4 Hp 106 Solving time sec 0 193997 Dolo 9665 LO T7 9619 np 1096 solving Time secs 0 971653 4 0 628347 994702554 Ap 196 Solving time sec 1 Oak 15 9148 np 106 Solving time sec qol ce Oud 96 31 395 Grog Jp OG Solving time sec dots Og SL 610 947 np 106 Solving time sec vds VE 93 4041 486 955 np 106 Solving time sec 1164925 F 150 160 5939 mp 104 Solving time sec 266 9025 151 100 np 104 Solving time sec 215 15 7 5 Log 100 np 104 Solving time sec 56694929 F SoOuwdldol 224 AMG oy np 104 DeckBuild ATHENA gt Return to the input deck ATHENA gt implant bf2 dose 1 0e12 energy 35 pearson 4 16 14 STMT Enables you to define variables that change under the control of loops Syntax stmt lt parameters gt Where lt parameters gt gt lt parameter gt lt parameter gt lt parameters gt parameter gt variable initial change level That is a stmt command must carry at least one parameter and may carry many independent parameters SILVACO International 4 73 VWF Interactive Tools Description This is effectively a shorthand for part of the ASSIGN statement The initial change and level terms are all numerical expressions The value of the variable is re evaluated every time the STMT command is encountered If no arithmetical operator is specified or if the sign appears explicitly then addition is understood and the v
163. 41 Rolloff Step P Low SILVACO International 9 49 VWF Interactive Tools Rolloff Low P Step Rolloff Low Premature Step or Low P Step Figure 9 42 causes the rolloff function to be used in the negative direction from the impurity source area In the positive direction the impurity value drops to steps down to zero if the distance is greater or equal to zero This causes the positive edge of the impurity source area to have a zero value 104 Figure 9 42 Rolloff Low P Step Rolloff Step P High Rolloff Step Premature High or Step P High causes no rolloff function to be used The impurity source area contains the peak value except along the positive edge which is zero All areas outside the impurity source area also get zero values As you can see in columns 2 and 4 of Figure 9 43 this is completely useless if Start X Y equals End X Y z ON 4401194 Ho Rollaff Ho Rollaff Ho Rollaff Ho Rollaff Figure 9 43 Rolloff Step P High Rolloff P Step Rolloff Premature Step or P Step causes no rolloff function to be used The impurity source area contains the peak value except along the edges which are zero All areas outside the impurity source area also get zero values As you can see in columns 2 and 4 of Figure 9 44 this is completely useless if Start X Y equals End X Y ON oy 4211 No Rolloff Ho Rolloff WoRolloff No Rolloff Mo Rolloff Ho Rolloff Ho Rolloff Figure 9 44 Rolloff P Step
164. 43 12 1992 Commands input from file dev tty SSUPREM3 l SSUPREM started SSUPREM Figure 4 5 SSUPREM3 Deck Fragment DECKBUILD permits several ways to run the deck one line at a time all of the input deck or only up to a breakpoint Run the deck a line at a time by clicking next on the execution control panel The first line go ssuprem3 is ignored by the simulator This line is an autointerface statement that tells DECKBUILD to run the following deck in SSUPREMS3 Click next again The first comment line is executed by SSUPREM3 SSUPREMS just repeats the comments it sees Click next again to execute the INIT statement Continue in this fashion to go as far as desired into the deck At any time you can tell DECKBUILD to run from the current line to the bottom by clicking cont When run is clicked DECKBUILD always runs from the first line to the last Be careful if in the middle of the deck since DECKBUILD starts running from the top again Use cont to keep going from the middle of the deck DECKBUILD saves special files automatically after each process step These are history files which allow backing up and re starting the simulation from any point in the deck See Section 4 9 History for information about how 1t works Resetting The Current Line Notice that as the deck is stepped through the Line field is incremented Line shows the current line in the input deck Since next always operates on the current line it
165. 5 add an extra 5 microns in depth at y 2 0 stretch y val 2 0 stretch value 5 stretch out the doping profile between 2 microns in depth and 3 microns in depth to take 3 microns instead of 1 micron stretch yl 2 0 y2 3 0 length 3 0 Note center is the same as center false as described in generic parameters boolean type 9 13 23 STRUCTURE Save current structure to a file Syntax STRUCTURE OUTFILE lt C gt 4 TYPE MASTER DEFAULT SAVE CEIBhENAME S C IYBES CP X4 TYPE CARD DECK DEFAULT TYPE2 MASTER STRUCTURE CARD DECK Parameters FILE NAME lt c gt FILE OUTFILE OUTF File name used to store a Silvaco Standard Structure file or a DEVEDIT command file The structure card only stores Silvaco Standard Structure files TYPE lt c gt Type of file to store Possible values are e MASTER MAS SILVACO standard structure file e STRUCTURE STR SILVACO standard structure file e CARD DECK DECK DevEdit command file 3 D Parameters TYPE lt c gt In 3D mode structure files are normally saved with prismatic elements mode tetrahedrons or mode tet can be used to output tetrahedral elements into a structure file Replaces Card SaveFile FileName lt c gt Type lt c gt SILVACO International 9 83 VWF Interactive Tools 9 13 24 SUBSTRATE Special substrate electrode Syntax SUBSTRATE DELETE NAME lt C gt ELECTRODE ID lt N gt WORK FUNCTION lt N gt APPLY lt BOOLEAN
166. 6 26 Storing a New File Store as New File Figure 6 27 Store Popup 6 26 SILVACO International DeckBuild Optimizer Note Parameter links are not saved in the optimization file Any linked parameters have to be relinked when the optimization file is loaded 6 9 3 Working With An Existing File Any previously saved optimization file can be loaded and modified or stored under another name to create a new file leaving the original intact To load a file into the OPTIMIZER 1 Choose File gt Load File on the Optimizer window and the Optimizer Load Popup shown in Figure 6 28 will appear oH Deckbuild Optimizer Load Directory elvis rjw deckbuild lib O m O main O main simmar msex01 in opt optexo1 in opt O optim Filter opt File name optexoz in opt Figure 6 28 Optimizer Load Popup 2 Adjust Filter if necessary to filter out all but the file names of interest By default the filter is opt Press Return to apply the filter 3 Change the directory if necessary by double clicking on a directory in the scrolling list or by entering a directory name under Directory 4 Once you have found the file you want to load load it by double clicking on it in the scrolling list You can also load the file by clicking on Load Note The file to be loaded must correspond to the current input deck If the information in the optimizer file does not match the contents of the input deck the OP
167. 7 Productivity Enhancements eessseeeeessss 1 8 Mittal Waler FAB iie esset reto iu urban uo tecto 1 6 VWF Database EE 1 7 See also Advanced Features Automation Tools VWF Interactive Tools DOCK ET DEE 1 3 A ean a 1 4 Gening oo rl oo COP uo AA a 1 3 MaskV Ie WS a OS 1 4 A 1 4 W Worksheet Mouseless Opera ri ege aee ie eaae deed 6 25 Numere VE 6 24 Selecting Cie 6 24 See also Optimizer X X Y Graphic Display HE uis meer eor tus enl oett totius cu ieu reat 7 26 See also Cartesian Graphs Cross Section Display EE 7 28 See also Cross Section Display Weg E 7 27 See also Polar Charts SEENEN 7 27 See also Smith Charts Y Yield Analysis A a 7 89 KI 7 89 EE 7 89 SILVACO International
168. 7 TO GSS TTC 7 88 15259 EE ee Eeer 7 89 7 26 9 Input Parameter RangeS 1 0 ccc cece cece Hmmm 7 89 F20 OAP DISITD A Dee abere eege hne ed Coed ae ee 7 90 Tee Wr eel Opa CCEPIT 7 91 7 20 12 EXpenmentaleslllS aseo oe d dormi dude o bon eive n baa ues Ee 7 91 1 20 13 Optimizer S6 UD equa e exaltabitur s ta Met Aleta Lia iE MEA ee id a ipa 7 92 25 14 ASA OCD orante et oot inh oo need Ade era od rM ant bae david dba queis 7 93 Chapter 8 Ios pepe 8 1 0 E mM 8 1 8 2 Differences Between TonyPlot3D and TonyPlot cc ccc cece eee eee eee ene 8 2 8 2 1 Starting TOMPI D cios As TA 8 2 9 9 iri isa aa taa 8 3 8 9 1 Main Menu ODUONS sir ata eee hoe ont dee id a A oa ee daa 8 4 82 2 Nal TOO Da OPONE EE 8 6 8 3 3 Plot Control Toolbar al EE 8 7 xii SILVACO International Table of Contents 8 3 4 Plot Control Using the Mouse 8 7 8 4 Display EE 8 9 A E E A A T EA A EE E E 8 11 Oe Eent ie EE EE 8 12 D EE 8 14 A e Te EE ee oe ee a a EE 8 16 E NECO esata cate pau oo ets ee Se M D RR UE ed eek Be ea T 8 18 EE RETE TOT TET TET 8 20 0 4 PR eee a ae a ee eo oe eee eee EE 8 20 A a a a a aa a a a AAN TA 8 26 E EE 8 30 A EE EE 8 32 GREEN nnnm 8 34 A A E 8 34 A ee e no IS ee eee 8 35 De EE eebe gedet ges 8 35 le eee ee ee eee ee Oe et hy eee ee eee ee ee eee ee ee ee ee ee ee eee 8 36 DOS AS ene Rieder EE gmbh 8 37 9 6 6 MOUSE ee eege Ot fa od wa tat hound erred ei et eh be mea dud deta e 8 38 A ie ra aie a ETT ET ETT EET
169. A SILVACO International Index Ser Kult Ile 4 17 See also DeckBuild Controls Threshold Voltage Calculation A 5 TONY POL eT 1 4 2 9 7 1 8 2 2 D Eet 2 16 AA EE 7 18 AOGITG OMS EE 7 53 Roding MS TER 7 52 ANACO WEE 1 33 See also Annotation Base WINDOW EE 7 7 See also Base Window Command Stean ali cido td 7 15 7 72 Examining Data WEE 7 1 File Loader See File Loader A EEN 7 66 PURCIONS EE 7 76 Val 7 14 A O 7 70 Labels See also Labels 7 35 Coe Meier 2 9 A ea E 7 2 BE ele ceren enia a ieii 2 15 Overlays meseis ae Ee 7 84 A Ro RUNDE 2 11 jio Go jani ro ERRORI E ERROR Pcr 7 13 See also Plot Control Plot Display See Plot Display POE GWU WEE 7 16 Blies a PM 7 49 Printer DIIWeIS cuca 7 55 MIT e ai o c e PD 2 11 7 49 Production MOE Ast eek as oe dieses cdo pao moe oes 7 86 ioca E 7 56 Se ei EE 7 29 See also RSM Display EE 7 82 Standard Controls occoccnnccncnnnonconcnnconenononcnncnaroncnaronennnos 7 2 LAU T TT 4 33 A ERR EP 7 4 Statistics Display io SEENEN 7 31 OUUGIUIE FIGS iio 2 13 TEMO DER 7 2 Tools See also TOUS surten 7 38 User Data FES trip 7 80 X Y Graphic Display canica eegen 7 26 SEET 2 11 TonyPlot Properties Drawing K le le cr 7 56 neen ER 7 65 COS tarso 7 66 mU niea aT PP tn 1 69 EIERE e a 7 61 VERT 7 64 E VE EE 7 68 EE 1 67 A E E E E E E 7 60 PIOVOPIONS EH 7 57 SeguencE le 7 63 Sequence EE 7 64 Index 9 VWF Interactive Tools See also To
170. ANT S PISCES BLAZE BLAZE3D DEVICE3D TFT2D 3D FERRO SIGE SIC LASER VCSELS QUANTUM2D 3D LUMINOUS2D 3D GIGA2D 3D MIXEDMODE2D 3D FASTBLAZE FASTLARGESIGNAL FASTMIXEDMODE FASTGIGA FASTNOISE MOCASIM SPIRIT BEACON FRONTIER CLARITY ZENITH VISION RADIANT TWINSIM UTMOST UTMOST II UTMOST III UTMOST IV PROMOST SPAYN UTMOST IV MEASURE UTMOST IV FIT UTMOST IV SPICE MODELING SMARTSTATS SDDL SMARTSPICE FASTSPICE TWISTER BLAST MIXSIM SMARTLIB TESTCHIP PROMOST REL RELSTATS RELLIB HARM RANGER RANGER3D NOMAD QUEST EXACT CLEVER STELLAR HIPEX NET HIPEX R HIPEX c HIPEX RC HIPEX CRC EM POWER IR SI TrMING SN CLOCK SCHOLAR EXPERT SAVAGE SCOUT DRAGON MAVERICK GUARDIAN ENVOY LISA EXPERTVIEWS and SFLM are trademarks of SILVACO INTERNATIONAL All other trademarks mentioned in this manual are the property of their respective owners 1990 1991 1992 1993 1994 1995 1996 1997 1998 2000 2002 2004 2005 by SILVACO International Inc SILVACO International i Reader Comment Sheet We welcome your evaluation of this manual Your comments and suggestions help us to improve our publications If you have any responses to the questions below please let us know Please write your bservations down and send your complaints bug reports suggestions or comments to the e mail address listed below Is this manual technically accurate Are the concepts and wording easy to understand Is the size of this
171. All the values of x in combination with all the values of y Adding another variable sweep parameter x type linear range 1 4 7 parameter y type power range 1el10 lel5 6 parameter z type list data 0 2 3 would increase the number of trials to 126 All 42 trials from the previous experiment with z 0 and all 42 trials with z 2 and all 42 trials with z 3 SILVACO International B 13 VWF Interactive Tools SILVACO International This page is intentionally left blank Numerics 1D RSM Graphs NOW Ce EE 7 29 2D Mesh Plot Display Spr D et P 7 24 G70 9 0 IEN 7 20 A T 7 24 Eng RE 7 23 Big FE E EEE NERT 7 25 mise on eege 7 20 OC ONG erte eege 1 22 See also Plot Display 2D RSM Contours Contour TDS PC 7 30 MES EE 7 30 Output Range qt 7 30 Biren 7 30 Xand Ae EE 7 30 ON AN 7 30 3D Plot Control alc e 7 18 A E EE 7 18 See also Plot Control IR Olne 7 30 A Adding Targets SS Ec 6 14 xo nml RN EM EMEN Em 6 14 See also Targets Advanced Features Automation Tools Experimental Design EE 1 7 Integrated Graphis uti aa 1 8 intelligent me i e oT E 1 7 Networked EXCGUIION EE 1 8 One ICID ss cose tet oe 1 8 POCOS FIOWSCONOM EE 1 7 Quality Printouts sao 1 8 Response Surface Analysis ccccssssceccsseeeeeceeeseeseeeeeess 1 8 Sensitivity Analysis 1 7 Split Points Experimental Trees and Worksheets 1 7 VWE Jat aDa 6E e ies boe Lo dente eege ee 1 7 Neit EE 6 24 Advanced Fea
172. BINTERNAL will recognize you are interested in the result res for example and will collect these results from each simulation SILVACO International B 3 VWF Interactive Tools B 3 The Experiment File The experiment file has three main parts B 3 1 Load command load infile resistor template in This tells DBINTERNAL which file to use as the basis for the simulations B 3 2 Experiment command Sweep parameter doping type power range 1 0e15 1 0e19 13 This tells DBINTERNAL how you want the variables to change B 3 3 Save Command If the template file contains extract statements you also want a save command save type sdb outfile resistance dat which tells DBINTERNAL where to save the extracted data The saved file will contain the values of all the independent variables the variables defined in the experiment command and the values of all the dependent variables the variables calculated with extract statements SILVACO International B 4 DBInternal B 4 Technical Details DBINTERNAL reads in the template file and looks for any variables defined on an extract line and makes a note of their names The name must be the first parameter after the extract command and have no spaces extract name res DBINTERNAL also knows what parameters have been set on the experiment line For example DBInternal will control the parameters x and y Sweep parameter x type linear range 1 2 2 parameter y type linear range
173. CO International 2 3 VWF Interactive Tools 2 4 The first text that appears in the tty region is ATHENA start up information This consists of a title banner and a summary of ATHENA products licensed for use with your installation This information will be followed by the ATHENA prompt ATHENA gt The prompt indicates that ATHENA is ready to execute instructions The input commands that you want ATHENA to process must be entered into the text edit region The commands are then passed to the lower tty region for execution in a way that you specify using the simulator control buttons A set of input commands can be defined in several ways including e Typing commands directly into the text edit region The statements must be written using the appropriate simulator syntax which is documented in the user manual of the simulator e Filling in popup windows that are invoked from the DECKBUILD Commands menu and having DECKBUILD write syntactically correct statements e Loading and editing an existing input file The first method is sometimes preferred by experts who are familiar with simulator input syntax The second method is often preferred by new users since they need only specify problem oriented information without knowing the simulator syntax The third method incremental modification of an input deck that is known to work is often an effective way to get started on a new problem DECKBUILD comes with a large number of examples t
174. D appears as a window containing a text subwindow and a tty subwindow The filename specifies the file to edit If not specified the text subwindow will be empty If specified DECKBUILD loads the file into the text subwindow In batch mode a filename is required DECKBUILD appears as an icon and automatically starts a simulator and executes the entire input deck see Default Simulator on page 4 13 DECKBUILD quits when the run 1s complete In either mode you can save the run time output of the simulation by specifying the out file option 4 3 3 Options The following options choose the default simulator configuration A detailed explanation of these options is provided Default Simulator on page 4 13 s3 ssuprem3 an athena fa mercury od clever asatlas ma masksim de devedit ututmost mo mocasim ss smartspice in internal hi hipex e run starts DECKBUILD in batch mode The input deck filename is required If none is specified DECKBUILD displays an error message and exits e outfile lt outfilename gt The file specified by outfilename is created to store the run time output of the simulation DECKBUILD writes each line of the tty subwindow to out filename as the simulation progresses e cutfile lt cutfilename gt The file specified by cut filename is loaded as the current cutline file DECKBUILD uses the file for mask region and electrode data e optfile lt optfilename gt can be used to load an optimize
175. D simulation in ATHENA until any statement requiring 2D is encountered such as an etch left right ATHENA then transfers automatically into 2D mode for the remainder of the simulation You benefit from applying the same models and syntax throughout the process simulation The choice of SSUPREM3 or 1D ATHENA depends on which simulator is preferred or for which special models have developed Once in ATHENA you can continue process simulation and interface to other 2D simulators as well It is also possible to interface to DEVEDIT at any time to adaptively remesh the device in preparation for device simulation Finally a number of ATLAS device tests are shown at the end of the process sequence Unlike the process sequence where each section acts as a link in the chain of processing the device tests each act on the final process structure Append as many device tests as needed to the end of a process simulation and each will use the same final process structure as input 4 40 SILVACO International DeckBuild The Active Structure This final structure at the end of process simulation is called the active structure DECKBUILD saves and remembers the active structure whenever auto interfacing is performed from a process simulator to any other simulator Device tests always use the active structure unless explicitly initialized otherwise The current active structure is always shown on the left footer of the Main Control popup The Auto Interfac
176. DECKBUILD VWF or SPDB Users of earlier versions of TONYPLOT will find some of the functionality familiar but other capabilities and the user interface are completely new All the features that were available in TONYPLOT are still supported in this version The interfaces are easier to use however and the resulting display is also improved Version 2 of TONYPLOT provides e Multiple file loading e Command language control e Plot comparison and overlay e Movie function replaces the Master tool Movie e HP4145 emulator Process animation Cross section profile integration Poisson Solver e Many more user defined properties e Improved user interface and ease of use e Improved cutline definition and creation e Faster drawing e New Structure file features e User definable setup parameters and set files 7 1 1 Examining Data TONYPLOT may be used to examine several data files all at once each in its own plot window These plot windows can be combined effectively overlaying the data sets so that direct comparisons can be made Plots can be interactively added deleted and duplicated overlaid and separated Not only does TONYPLOT allows you to display any data file produced by Silvaco tools but it also provides extensive tools for examining these plots and the associated data For example it is possible to take cut line slices through 2D structures or to integrate a curve to calculate area or even perform s
177. DEVEDIT has only a limited subset of these colors so the closest match is used Some basic colors can be specified by name such as red green blue yellow cyan magenta black and white See Generic Parameters for a more complete description Replaces Card AddImpurity ID lt n gt Region lt n gt Color lt n gt Basel lt point2d gt Base2 lt point2d gt PeakValue lt n gt ReferenceValue lt n gt ContourValue lt n gt Y izlee nc 42 2 0 gt Z lt n gt n gt A CombinationFunetion lt e gt X Rolloffil lt c gt Concentrationbunctilonls o X Coefficlentilis n CParaml lt n gt lCRatiol lt n gt X Bolloftt2 lt 0 gt Concentrationtu ction2 0 gt X Coefficient2 lt n gt CParam2 lt n gt CRatio2 lt n gt bolloff3e c Concentrationrunction3 lt 0c gt Y Coefficient lt n gt CParans lt n gt CRatio3 lt n gt See Also PROBE TLE 9 70 SILVACO International DevEdit 9 13 10 IMPURITY REFINE Set limit on the impurity differential across triangles Syntax IMPURITY REFINE IMPURITY lt C gt ID lt N gt SENSITIVITY lt N gt scale lt C gt transition lt N gt or IMPURITY REFINE MINIMUM SPACING lt N gt Z lt N gt or IMPURILIYBNEPFINE ID SN DELETE Preferred Abbreviation imp ref Description These values are used by the meshing routine to determine if triangles are small enough When the mesh card is run the current sensitivity of each impuri
178. Data Filter dat File name Figure 6 17 X Y Target Data Popup 1 Position the pointer anywhere in the row to be deleted and double click the SELECT mouse button to select that row The row will then appear raised Figure 6 18 2 Choose Delete from the Edit pull down menu The selected row will be removed from the The Delete operation works on all currently selected rows more than one row at a time can deleted See Section 6 8 Worksheet Editing for procedures on selecting more than one row For curved targets Delete deletes only the selected x y data point s To delete the entire target at once select any row in the curve to be deleted as in step 1 above and choose Delete All from the X Y Data menu Figure 6 19 6 16 y Mode v Targets Mid Seem e wt Pvt ike Locate Target name VI Curve Targets Add Toggle Lin Lag X Y Datar Select All linear linear linear linear linear linear linear Deckbuild Optimizer optexO2 in opt edited value Target value SES value pe quem 9 104 74e 14 rr a 8432 78 03 een 3 BB32e Up ss E 3516578 06 ege Al 14 802e 05 aa 1 023914e 05 E e 153658e 05 Pr dbobe 05 PE feobue 05 PE 3631e 05 PE ES A 3 17609e 05 Figure 6 18 Deleting a Target SILVACO International DeckBuild Optimizer iy Deckbuild Optimizer optexO2 in opt edited Y Mode v Targets Targets Line number Target na
179. EEN SILVACO International 9 95 VWF Interactive Tools Material Number Material Full Name Aliases Structure File ID TonyPlot Material Name Compatability Names Alpha Gas 3 a loha Si 3 a Si__ 3 Alpha et 4 alpha Si 4 a Si_ 4 User 1 UD1 lt user defined name gt User LO UD10 lt user defined name gt AlxGal_xAs_x_0 AlxGal xAs x 0 25 ALGI AlGaAsl ALG1 OY pa O 00 00 J J J J J J J J J J UI e O1 D D NO O1 CO NO O1 CO NO We O CO NO AlxGal_xAs_ x 0 AlxGal xAs x 0 5 ALG2 AlGaAs2 ALG2 OV A xGal xAs x 0 AlxGal xAs x 0 75 ALG3 AlGaAs3 ALG3 OD Inxgal AS E Unst InxGal xAs x 0 50 unstrained INGO InGaAs INGO OY D InxGal xAs x 0 33 Str GaAs InxGal xAs x 0 33 strained matched to GaAs INGI InGaAs CENGIY OD L nxGal xAs x 0 75 Str Inp InxGal xAs x 0 75 strained matched EO InP ING2 InGaAs ING2 AlxInl_xAs_x_0 50 AlxInl xAs x 0 50 ALIN AlInAs ALIN Barrier DM O ER W SOG Polyimide D Cooling package material OV J 00 TARO WO WSGl1x Tungsten Silicide WSi2 Tas TE been kom V lronadew JS m MINES qc Nickel Sslrerde NISL 9 9 SILVACO International DevEdit Material Number Material Full Name Aliases Structure File ID TonyPlot Material Name Compatability Names PEDIR Platinum SLLicrde PLSTAT TP to 97 MOS OSEE Molybd
180. ERE 9 72 O E 9 73 PS A o Dae let dada 9 73 MIRROR LUND PAM E IM Ie LINE 9 74 MOVES E 9 75 PRORIBE m A isis um AP Oo BE P 9 76 epp 9 77 GIS EEN 9 77 REGI N aia 9 78 RENUMBER REGIONS scsersveseiorscsacsesastivesseceesoome st 9 80 DOW RGE E 9 80 TREO te hte e de Sada teeth 9 80 STRUCTIUBIE N ie Rc E Ud 9 83 SUBSTBATE eege Bee ee 9 84 WORK AREA Arash nsession nian 9 84 ZPEANE EE 9 85 Device Extraction A AE R PEE E AE TE ER E 5 32 EE EE 5 29 Curve Manipulation REENEN 9 31 SILVACO International Device Extraction EE 5 29 See also Extract Device Physics A 2 25 Device SIMIO EE 2 25 Deming uri eec 2 25 Extracting ue 2 2 RUANO dE 2 25 Device Structure Belle EE 2 24 Device Threshold Voltage uk 2 20 Display Modes Sono i e C 8 12 SOSUA CE csi ceca 8 16 A A 8 14 O eege 8 11 NEE asset ect ort o Se lect eee ee a 8 18 Display MOdOS tralaren ae ea e 8 9 See also TonyPlot3D Displaying Plots See Plot Display Doping SD DOPING Mane nee ere ee i ege 9 40 DELETING SOURCE OBJECT Siete ees 9 40 IMPURITY SOURCE BOX ccccccseseeeeceesseeeeseseeeees 9 39 IMPURITY SOURCE LINE eeeeeeeeeeen 9 39 SOURCE ATTRIBUTES coooccccccnnccnnccnonccncnnancnncnnnncononnnos 9 40 Doping Profiles e one oad ic A A CHOR 9 53 Draw WCCO R E 8 9 Drawing Regions Base Impurity Doping 32 29 95 66 reae ee 9 37 E Editing Regions ADDING tee 9 35 SELECTING OR TE 9 35 EIBCITOUE S train 4 44 ESPOSO eege e 1 8 EXCMO ia
181. EXTRACT provides several additional options to 2 D curve support axis layout axis attributes optional computation of area under the curve and optional outfile These options are the same regardless what type of curve for instance QUICKMOS CV and SIMS profile you are extracting The ATHENA Extract popup showing the SIMS Profile is shown in Figure 5 4 SILVACO International 5 5 VWF Interactive Tools 5 6 Deckbuild ATHENA Extract Extract v SIMS profile Name Material Silicon All Materials Material name Occurrence d Impurity Met Doping N vs Y axis Compute curve area X axis attributes Y axis attributes X axis bounds X niv vtart E onuis csi Store X datafile Filename extract dat Results datafile results final Hide worksheet result Extract location Value Figure 5 4 ATHENA Extract Popup with SIMS Profile The following options are available e X vs Y axis determines the x and y axes of the resulting profile curve The default which should always be used unless you plan to customize the resulting extract expression is that the x axis is depth into the material and the y axis is the concentration e Curve X axis bounds specifies whether to create the curve for the whole X axis or for only a required section If selected X axis value fields become active enter values in the same units as the resulting curve This is useful for extracting local maxima and minima e X
182. Ee trs RN I Figure 2 13 Adding Lines in Deckbuild s Textedit Window Single step until the command struct outf vtimplant str is executed At this point the two Standard Structure files with the names gateoxide str and vtimplant str have been saved to your current working directory These structure files are loaded into TONYPLOT and overlayed for comparison 2 14 SILVACO International Tutorial 2 5 6 Overlaying Two Plots TONYPLOT allows you to load up to 128 plots into a single session Any of these plots can be overlayed simply To load a file into TONYPLOT select the File gt Load Structure This creates a menu of possible files that can be loaded Figure 2 14 a Tonyplot Load structure Directory u jdoe work _ gateoxide str _ moslex02_0 set _ meoslex02_0 str 2 mosiexo2 1 log 23 moslex02_1_log set 3 vtimplantstr Go upa level d Filter 227 Filename gateoxide str Load 7 Dismiss 7 Figure 2 14 The Load Structure Window The files gateoxide str and vtimplant str should exist in your current working directory and should appear on the list of files that can be loaded into TONYPLOT Any plot shown on the TONYPLOT screen can be selected When you select a plot it is surrounded with a band Plot selection and deselection is controlled by clicking the center adjust mouse button on a plot Select and deselect some plots to become familiar with this process To overlay two plots 1 Sele
183. Fast State Density s E 1 ED Electron Current X Comp Lect ron Current COMP Electron Current Z comp Hole Current X comp ole EE EE D Hole Current 2 Ccomp og Current X component Current Y component Current Z componernc Photo Generation rate ien ee desch lo Hole Current magnitude hole cur mag g Electron Current magnitude elec cur mag linear Current Magnitude cur mag linear 9 90 SILVACO International he eg RENE RENE NENNEN SS Sg _ RS RS ES E DevEdit Default imp refine Transition Value Impurity Full Name Preferred Abbreviations Total Current area t cur area linear Elec Cur Des elec cur dens x linear Hole Cur Dens X hole cur dens x linear Current Dens X cur dens x linear Hole Cur Dens Y hole cur dens y Extended def size ERR NENNEN Extended def dens BEEN BEEN NENNEN o NENNEN NENNEN o A BEEN o AAA BEEN e BEEN BEEN NENNEN BEEN NENNEN BEEN A IS Lect con ORE TEC Eno MS Hole SRH rec tno A Cooling package Temp MP Equilibrium potential MEME Joule Heat Power MEME o A AAA A Total Heat Power REC Heat CODnQUOCU EE Heat Ccapacity Displacement J Displacement J X comp linear SILVACO International 9 91 VWF Interactive Tools Default imp refine Impurity Full Name dus E
184. Forms Letter P Letter P 2 idth 7 9 Letter L i Ve Ad iF Ad tL gt D Ha s le SS Update Delete Portrait Landscape Dismiss GA GJ Figure 7 33 Form Editor Popup Adding deleting and modifying forms is done in the same way described for printers see previous section The items on the popup are e Name The name of a form can be any string but each form must have a unique name e Width amp Height Indicates the size of the print image not the size of the paper Numbers are interpreted as inches unless proceeded with the letters cm to indicate centimeters e Left amp Bottom Indicates the margins between the left and edges bottom edges of the paper and image Numbers are read as inches unless proceeded with the letters cm to indicate centimeters e Orientation The choice item indicates whether the form is upright portrait or sideways landscape TonyPlot will rotate plots by 90 when printing to landscape forms The Load Defaults and Save Defaults buttons exist so that the forms in the form editor can be retrieved between sessions SILVACO International 7 51 VWF Interactive Tools 7 17 4 Printing At Startup TONYPLOT can make hardcopies or print files when first invoked by using a combination of the print printer and form options The print option must be given If it is supplied as the last argument to TONYPLOT then a default name is used for a print
185. Function lt n gt Zl lt n gt Z2 lt n gt DeleteRegion Region lt n gt SILVACO International 9 79 VWF Interactive Tools 9 13 20 RENUMBER REGIONS Renumber all regions to fill in gaps or specifically renumber one region Syntax RENUMBER REGIONS FROM lt n gt TO lt n gt Parameters FROM lt n gt Region ID of region to be renumbered TO lt n gt Region s new Region ID 9 13 21 SOURCE Run commands stored in file on existing device Syntax SOURCE FILE NAME lt C gt Z1 lt N gt Z2 lt N gt MESH lt BOOLEAN gt Parameters FILE NAME FILE Run DEVEDIT cards contained in the specified file MESH lt boolean gt If mesh is set to false any mesh commands are ignored The default is mesh true accept mesh commands 3 D Parameters Z1 lt N gt If a 2D region card is read convert to a 3D region using z1 as the starting z plane Z2 lt N gt If a 2D region card is read convert to a 3D region using z2 as the ending z plane Replaces Card IncludeFile FileName lt c gt Type lt c gt Z lt point2d gt Zl lt n gt Z2 lt n gt 9 13 22 STRETCH Stretch the device Syntax STRETCH X VAL lt N gt Y VAL lt N gt STRETCH VALUE lt N gt REGION ID lt C gt MATERIAL lt C gt LENGTH lt N gt STRETCH VALUE lt N gt Y LENGTH lt N gt Y STRETCH VALUE lt N gt CENTER BOOLEAN X1l lt N gt X2 lt N gt STRETCH VALUE lt N gt LENGTH lt N gt
186. G gt lt EXTRACT SINGLE LINE PARTICULAR D datafile lt OSTRING gt hide lt HXTRACT MULBLIILILBLBZE LEN GENEBAIL extract init infile lt OSTRING gt In default of the above line a temporary structure file representing the current state of the device will be constructed extract Start lt EXTRACI MULTIPDE INE SEIUE N extract cont EXTRACT MUETIPLE ETNE SETUBAN gt x SILVACO International 5 7 VWF Interactive Tools zero or more instances of the extract cont line may appear extract done name lt OSTRING gt EXTRACT MULTIPLE LINE DONE N datafile lt QSTRING gt hide There are five pairs of definitions for EXTRACT MULTIPLE LINE SETUP N gt and EXTRACT MULTIPLE LINE DONE N with N replaced by 1 2 3 4 or 5 Elements from different pairs ones with different values of N NOT appear in the same statement ui must lt EXTRACT 2D MAX MIN CONC gt extract init infile lt OSTRING gt In default of the above line a temporary structure file representing the current state of the device will be constructed SCH extract name lt QSTRING gt 2d max conc 2d min conc interpolate lt IMPURITY gt lt MATERIAL gt mat occno lt EXPR gt X min v lt EXPR gt max v lt EXPR gt x max EXPR x min lt EXPR gt y max EXPR y min lt EXPR gt y max EXPR y min lt EXPR gt region lt OSTRING gt X datafile lt QSTRING gt hide extract x_pos_n
187. IEWS select it from the Tools menu Saving The Deck When satisfied with the results of the simulation save the input deck by choosing Save as from the File menu The Save As popup will appear Figure 4 6 Se Save As Directory 4 marting work test deckbuild Filter ir if go up a level Cl sflm LY 1dvt2 in 3 amexsi0 in 3 amex11 in 3 andy in Dbre in Lj anexo2 in 3 areatest in 3 atan in File analex28 in Figure 4 6 Save As Popup Enter in the directory and the file name wanted and click Save After DECKBUILD saves the file the popup will disappear SILVACO International 4 9 VWF Interactive Tools 4 2 5 Quitting DeckBuild The easiest way to quit DECKBUILD is to select File Quit This displays a notice to receive confirmation of quitting Alternatively you can quit DECKBUILD by using the Define menu The appearance and location of the Define menu depends on the window manager in use but is always available from the header region of the base frame Under the Open Look window manager click MENU with the pointer anywhere in the base frame header Under the Motif window manager click SELECT in the upper left hand corner of the base frame header In either case activate the Quit option to quit from DECKBUILD If any unsaved edits exist DECKBUILD displays a notice prompt allowing cancellation of the quit or discarding of the unsaved edits and quitting To save the edits canc
188. ILVACO International 4 41 VWF Interactive Tools next DECKBUILD does not only insert the auto interface statements but also brings up the proper Commands menu for the new simulator How Auto Interface Works When DECKBUILD gets a request to perform an auto interface from an auto interface statement in the input deck or through the Control Pad it evaluates whether an interface 1s appropriate 1D to 2D process is legal but 2D to 1D process is not If an interface is appropriate then DECKBUILD also checks to see if the current simulator has been initialized or not For example if ATHENA has not yet executed an initialize statement it doesn t have any simulation results to pass on to the next simulator Finally if both these conditions are satisfied then DECKBUILD causes the current simulator to save its simulation data shut down the current simulator starts up the new simulator and initializes the new simulator with the saved data If either condition is not satisfied then DECKBUILD honors the request to start up the new simulator but does not attempt to initialize it with saved simulation data The latter is appropriate when moving backwards in an input deck and for quick look and see experiments with another simulator You can also alter the default input and output flags using the go simulator interface statement For example the default load statement for DEVEDIT includes the mesh flag Using the following syntax the mesh can b
189. ION X 2 C COEFFICIENT X N CONCENTRATION PARAM X lt N gt CONCENTRATION SCALE FACTOR X N 4 X lt N gt Y lt N gt R1 N ROLLOFF Rl lt C gt Y CONCENTRATION FUNCTION R1 lt C gt COEFFICIENT R1 lt N gt CONCENTRATION PARAM R1 lt N gt CONCENTRATION SCALE FACTOR R1 lt N gt RO lt N gt ROLLOFF RO lt C gt CONCENTRATION FUNCTION RO lt C gt COEFFICIENT RO lt N gt CONCENTRATION PARAM RO lt N gt CONCENTRATION SCALE FACTOR RO lt N gt 4 BASE I lt N gt lt N gt BASE Z lt N gt lt N gt X ROLLOFF Y C CONCENTRATION FUNCTION Y lt C gt SILVACO International 9 67 VWF Interactive Tools COEFFICIENT Y lt N gt CONCENTRATION PARAM Y lt N gt CONCENTRATION SCALE FACTOR Y lt N gt ROLLOFF X C A CONCENTRATION FUNCTION X lt C gt COEFFICIENT X lt N gt CONCENTRATION PARAM X lt N gt CONCENTRATION SCALE FACTOR X N Lp d AENA xe SNS NO Ey ROLLOFF Z C A CONCENTRATION FUNCTION Z lt C gt COEFFICIENT Z N CONCENTRATION PARAM Z lt N gt CONCENTRATION SCALE FACTOR Z N Description Implant add an impurity or quantity to a device by using the impurity card The model used assumes that a rectangle or a box in 3 D mode has a peak value and then rolls off from this peak using a vertical formula y a horizontal formula x and possibly a width formula z These
190. International 3 5 VWF Interactive Tools This page is intentionally left blank 3 6 SILVACO International Chapter 4 DeckBuild 4 1 Introduction 4 1 1 Overview DECKBUILD is an interactive graphic runtime environment for developing process and device simulation input decks It consists of a window for input deck creation and editing a window for simulator output and control and a set of popups for each simulator that provide full language and run time support 4 1 2 DeckBuild s Purpose DECKBUILD is an extremely powerful and flexible tool that is easy to use and provides many automated features that previously required user operation Among these features is DECKBUILD s ability to generate error free simulator syntax driven from user friendly popup windows This feature allows for transparent transition from one simulator to another automatic definition of mesh and mask information and application of built in measurement extraction facilities Before DECKBUILD these tasks often required user intervention and were extremely time consuming By automating these tasks DECKBUILD allows you to concentrate on the real work at hand accurate simulation 4 1 3 Features DECKBUILD also offers several powerful facilities never before available One of these facilities the global optimizer allows optimization across an entire input deck even between different simulators For example varying an implant dose in SSUPREMS3 and a diffu
191. JOIN lt BOOLEAN gt Description Cut out a vertical strip between x x1 and x x2 or cut out a horizontal strip between y y1 and y y2 or both Points at x1 y1 will not be moved Points at x2 y2 will be moved to x1 y1 dragging point beyond x2 y2 with them Parameters X1 lt n gt Start of x direction cut X2 n End of x direction cut Y1 lt n gt Start of y direction cut Y2 lt n gt End of y direction cut AUTOMATIC JOIN 2 boolean AUTO JOIN If two regions made of the same material presently touch the regions are Joined into one region The attributes from the region with the lowest id will be used for the combined region The default value is true 9 13 7 DEPOSIT Deposit a layer of material Syntax DEPOSIT MATERIAL C THICKNESS lt N gt ROUNDING ANGLE lt N gt A SIDE TOP LEFT RIGHT BOTTOM START lt N gt END lt N gt REGION ID lt N gt REGION NAME COLOR lt N gt PATTERN lt N gt AUTOMATIC JOIN lt BOOLEAN gt gt Description Deposit a uniform thickness of a material on the specified side SILVACO International 9 65 VWF Interactive Tools Parameters SIDE TOP LEFT RIGHT BOTTOM Side on which to deposit the new region The default is side top THICKNESS lt n gt Thickness in microns of the deposit START lt n gt The start of the deposit If side top or side bottom start is an x coordinate otherwise it is a y coordinate Default value is left side of structure
192. Jun 15 15 16 44 1333 Commands input from file dev tty SSIPREMS gt E h SSUPREM3 started SSUPREMS y Figure 4 7 DeckBuild Base Window 4 4 1 Main Window Layout DECKBUILD s controls are layed out in a hierarchical format The most important and frequently used controls are placed on the main window Lower level less frequently used controls are stored as menu items on the top level menus or on popup windows accessed from the top level windows The resulting design attains an optimum of flexibility ease of use with a minimum of wasted space on the screen Menu Buttons The set of buttons located along the top of the main window are the menu buttons These buttons allow access to file control simulator selection simulator commands and the tool palette and are as follows e File The pulldown menu for saving and retrieving input deck files e View The pulldown menu for changing the view of the text e Edit The pulldown menu for cut paste and undo editing operations e Find The pulldown menu for text search and replace operations e Main Control The pulldown menu for top level DECKBUILD configuration and control e Commands The pulldown menu for simulator specific commands and input deck creation e Tools The pulldown menu for invoking the VWF INTERACTIVE TOOLS such as TONYPLOT 4 14 SILVACO International DeckBuild Execution Control Buttons The set of buttons located between the text and tty
193. Linear Mixed X Quantity Collector Voltage Y Quantities Linear Top Voltage Top Int Voltage Top Current Bottom Voltage Bottom Int voltage Bottom Current Group Nene Apply Reset Dismiss Functions Figure 7 16 Graph Plot Popup Show Allows selection of the way lines are drawn on the graph Points and or lines can be chosen Type Specifies the type of graph that is to be drawn The options represent cartesian graphs polar plots and Smith charts The data that is plotted is mapped on to axes of the chosen type If the data is in a format that matches the type chosen Ge r theta pairs for polar plots then selecting the Convert Data button tells TonyPLOT to transform the coordinates before plotting them Functions Displays the Functions popup which can be used to define the functions that can be selected from the choice of Quantities Functions can be plotted on any axis The type of graph chosen will affect the controls on the remainder of the XY Graph Display popup 7 11 1 Cartesian Graphs Scales Since only one quantity can be plotted on the x axis there is an item to select a linear or log base 10 x axis Choose the one desired For the y axis more than one quantity can be plotted If all of them are to be on a linear scale choose Linear for the y scale Choose Log if they are all to be log and Mixed if both linear and log quantities are to be plotted on the y axis X Quantity One
194. Logical values may also be arbitrary numerical expressions If any expression evaluates to a non zero value it is interpreted as true Otherwise it is interpreted as false You can use the actual words true and false You can also assign arbitrary boolean expressions to logical values The following operators are recognized logical AND amp logical OR logical NOT 5 The usual relational operators are also recognised gt lt gt lt with a single character for the equals operator and the token for the not equals operator Note Although unquoted strings are supported you should always use quoted strings for character values for the sake of clarity You can assign a whole array of values to a variable Arrays of numerical and logical arrays are written in the following manner 1 2 4 8 but arrays of character variables are written like this G2 e Mary c3 had Gb a c7 little c11 Lamb You can have many terms in a character array with their defining integers the ones prefixed with c for character and not be sequential SILVACO International 4 61 VWF Interactive Tools The array will be sorted in the increasing order of its defining integers Arrays are usually assigned to variables 1n loops After each loop the next value in the array will be assigned to the variable If the end of the array comes before the end of the loop the variable will revert to the first value in the
195. M SILVACO International 9 51 VWF Interactive Tools e Error Function d 1 02d y 0 79276d 0 0193454 Kt Kt K p e 9 6 e Error Function Dist 1 024 0 79276d 0 019345d First solves for dk p e 9 7 1 024 0 79276d 0 019345d p e 9 8 e Linear Dist 1 0 E k D 9 9 dy dek 9 10 p c 0 d 9 11 Note If p O then p 0 e Logarithmic dye d K 9 12 1 0 E gd P Tog dy 1 0 ST e Logarithmic Dist P B 1 0 D k e 9 14 dy dek 9 15 1 0 9 16 P Tog d 1 0 9 52 SILVACO International DevEdit e Exponential dr d oK 9 17 1 0 P dy 1 0 is e e Exponential Dist P log 1 0 de CR 9 19 d dek 9 20 1 0 p d 1 0 9 21 e e Constant p 1 0 100percent 9 22 e Step Function Depreciated Option Use constant rolloff and rolloff icons instead of the step function This option will be removed in future releases 9 12 2 Doping Profiles Doping profiles are a list of distances and impurity concentrations at those distances These can be obtained from SSUPREMS structure files SSUPREM4 1 D structure files and the SPDB doping database By using these values and one of the four extrapolation functions a user can add an impurity using this profile as a rolloff function instead of one of the analytical profiles contained in DEVEDIT Adding a New Doping Profile To add a new doping profile using the Impurities menu choose Doping Profiles The
196. MeshBuild algorithm is used to resolve these new points This also allows the resulting mesh to be refined using the Refine Box commands To create a modified tensor product mesh select Tensor Product under the Mesh menu button 9 9 10 Work Area Resizing The work area can be resized by selecting the Resize Work Area menu option from the Regions menu button New coordinates can be added to the Resize work area control panel Click on Apply when done 9 9 11 Defining 3D Structures A prismatic based 3 D solid can be specified in terms of a number of 2 D planes This 1s the approach DEVEDIT uses super set of all regions are defined covering all potential Z plane Then individual regions are assigned a start and end Z plane As an example Imagine a MOSFET conducting into the plane of the screen A poly gate runs from left to right across the screen Field isolation regions appear on the left and right hand side of the screen also You need to specify the values of the poly region in the Z direction These two values start and stop define the gate length Similarly all contact metal regions can be defined with a start and stop value in the Z direction As a region is defined the Start Z and Stop Z fields should be specified These values indicate the depth into the screen that the region boundaries apply Thus a 3 D structure can be defined from a single elevation 9 44 SILVACO International DevEdit 9 10 CREATING A NEW MESH 9 1
197. NAME STRING gt A H ID5 lt n gt NAME lt e gt 1 D lt e gt MATERIAL lt 0 gt COLOR lt n gt PATTERN lt n gt POINTS lt point2d_list gt WORK FUNCTION lt n gt ELECTRODE ID lt n gt Z1 lt n gt Z2 lt n gt Preferred Abbreviation REG Description A DEVEDIT device is made up of regions Each region has a unique region id number Regions also can have a name Several regions can have the same name Region names should not start with a number Some places accept a region id number or a region name and will assume a number is a region id number Regions are made of a material and contain a list of non intersecting polygons A region can be made up of several discrete polygons If one polygon is contained in another polygon it is considered a hole in the containing polygon If a polygon is inside a hole polygon it describes a region with material a hole in the hole For display purposes inside DEVEDIT only a region can contain a color and a fill pattern This is only used when DEVEDIT opens an X display window A region can also be an electrode in that case the electrode id number can be supplied or one can be chosen by DEVEDIT For future enhancement to simulators a work function can also be supplied Parameters DELETE Used to delete the region identified by id or namez One and only one parameter id or name should be used If id is a number delete region with that number If id i
198. NINMS EE A 1 AT gel er sc orina died ethene tees hoa Meee den tease UI A 1 AVA ERICA MODOS risa a id adas A 1 A 2 Concentration Dependent Mob A 2 A 3 Field Dependent Mobility Model 0000ooooooococccc nnne n eee nnnnn A 3 AA Sheet Resistance Calculation 00d A A As A 4 A 5 Threshold Voltage Calculation ees AA x A RA a Raw acu a A 5 A 5 1 Breakdown Voltage Calculation cc ccc ct III A 5 Appendix B OBIMA EEN B 1 A eege caida eG tbc Pac ee te ea Ie CS Ko OR B 1 Eu AMM EEN B 1 B 2 The Template EE ii B 3 B 3 INe EXpermmellE Fie ee et A rege B 4 SC OAC AA uie EE B 4 D 9 2 Expenmenb coral terri ts et tee atin edie rd EA B 4 Bo Da E WEE B 4 B 4 Technical Detall EE B 5 5 5 DBInternal COMMANGS EE B 6 Po Wea hire EE B 6 B o2 CROSAVG EPUM B 8 SOC Hal 6 0 EE B 8 E OMG CaO eene ouk etos onu e eek i are a ea LIE LRL eaten ead Eege B 8 EAE To EE B 10 Ep ODIO atte bette A Et be ee doin LM E E Ede B 11 SE B 11 BOO SWCD ee cei os bee eee tee A B 12 Xvi SILVACO International Chapter 1 Introduction 1 1 Getting Started When starting for the first time you are directed to use the DECKBUILD tool From here the use of software will unfold See Chapter 4 DeckBuild and the ATHENA USER S MANUAL for a tutorial guide on how to use DECKBUILD The VIRTUAL WAFER FAB VWF FRAMEWORK Figure 1 1 is comprised of three basic component sets 1 VWF CORE TooLs These tools simulate either a semiconductor device being pr
199. O International DeckBuild Extract 5 3 Customized Extract Statements In addition to the simple curve primitives shown on the popup you can edit the input deck directly to make customized curves Examples include extracting maxima and minima on the curve combining axes using a function definition looking at slopes of tangent lines intercepts of sloped lines The EXTRACT syntax is described below followed by examples of process extraction See the examples listed under Section 5 4 Device Extraction for more information 5 3 1 Extract Syntax Text inside matching pairs of and delimiters are comments These are used to clarify the meaning of the syntax and also as definitions for the most primitive types such as lt QSTRING gt The backslash character at the end of a line indicates a continuation line Many of the optional parameters the ones enclosed in square brackets have default values Some of these defaults are given immediately after they appear Others appear in more than one place and so are collected at the end Description EXTRACT STATEMENT EXTRACT SINGLE LINE GENERAL lt EXTRACT MULTIPLE LINE GENERAL EXTRACT 2D MAX MIN CONC EXIRACT TIME EXIRACT SIMPLE EXTRACT SINGLE LINE GENERAL extract init infile QSTRING gt In default of the above line a temporary structure file representing the Current stale of the device will be constricted extract name lt QSTRIN
200. O International DevEdit Parameters X1 lt n gt LEFT Minimum x value of draw area X2 n RIGHT Maximum x value of draw area Yl lt n gt TOP Minimum y value of draw area Y2 lt n gt BOTTOM Maximum y value of draw area POINT 1 lt n gt lt n gt P1 x1 y1 as a single parameter POINT 2 lt n gt lt n gt P2 x2 y2 as a single parameter Replaces Card WorkArea Pl lt point2d gt P2 lt point2d gt 9 13 26 Z PLANES Define z planes 3 D mode only Syntax Z PLANE Z lt N gt DELETE Z lt N gt SPACING lt N gt MAXIMUM SPACING lt N gt MA XIMUM RATIO lt N gt Description Z planes are created at the front and back of all regions and at the specified z locations Additional z planes are added to meet the requirements of spacing maximum spacing and maximum ratio Parameters Z n Z plane that must exist or is to be deleted DELETE Delete the specified z plane and any associated spacing Note If az plane at the start or end of a region is deleted only the spacing associated with that z plane is deleted The Z plane will still be made part of the structure SPACING SPAC The spacing around the specified z plane will be restricted to the specified spacing spacing 0 means there are no restrictions specific to this z plane spacing 0 is the default case MAXIMUM SPACING lt n gt MAX SPAC This is the maximum gap in microns between two adjacent z planes MAXIMUM RATIO z n MAX RATIO Th
201. O02 in opt Vt adjust implant dose Vt adjust implant energy Length etch p1 x SD implant dose SD implant energy linear d Cen e Ok Figure 6 3 Parameter Worksheet with 5 Parameters Defined 2 Select highlight the line in the input deck containing the parameter s to be added To do this position the pointer over the line and triple click the SELECT mouse button to capture the entire line The OPTIMIZER also accepts lines that have only a word or some selected characters 3 Choose Add from the Edit pull down menu To do this move the pointer over the Edit button click on MENU and select Add Figure 6 4 6 4 SILVACO International GN Mode v Parameters File v Line number Parameter name Vt adjust implant dose Vt adjust implant energy Length etch p1 x SD implant dose SD implant energy Deckbuild DeckBuild Optimizer Optimizer optex02 1n 0 pt _ Parameters Minimum Initial value value timized HLE Delete E Locate Toggle Link Unlink Select All Lins Lag Reset Values After selecting Add the Parameter define popup appears Figure 6 5 File saved OK Figure 6 4 Parameter Edit Menu ahs Response Optimized Minimum Line number Parameter name Initial value type value value Vt adjust implant dase 3 5e 10 Deckbuild Optimizer optex02 in o pt edited Vt adjust implant energy linear Length etch p1 x linear SD implant dose SD implant energy linear Para
202. Properties popups The variable below would setup DECKBUILD to start ATLAS on hostname sgi3 by default setenv ATLAS HOST sgi3 DB MESH DIR sets the template directory used in the ATHENA Adaptive Meshing popup The template files are read and displayed from the directory specified by this variable DB SYSTEM OPTION enables system commands for use in DECKBUILD and VWF AUTOMATION TOOLS NICE ARG sets the simulator nice value for use in DECKBUILD and VWF AUTOMATION TOOLS DB REMOTE DIR sets the remote simulation tmp directory which must be mounted on the host executing DECKBUILD and the host executing the simulator DB REMOTE CMD specifies the remote shell command to be used for remote simulation DB REMOTE STRIP specifies the automount prefix usually tmp_mnt to be removed from paths for remote simulation 4 76 SILVACO International DeckBuild 4 18 Error Messages 4 18 1 Text Subwindow Error Messages The error message Insertion failed may occasionally pop up when building very large decks This means that so many edits were made to the deck that the text subwindow can t handle any more changes This only happens when building a deck that has not been saved to a file yet Otherwise the text editor automatically saves the changes to the file as necessary The cure and the prevention are the same if this error occurs simply save the deck to a file An alternate preventative measure is to add a line of the form text maxDocu
203. R allows it to be read directly into the worksheet To create a curved target from a data format file follow these steps 1 Position the pointer anywhere in the target row and double click the SELECT mouse button to select that row The row will then appear raised 2 Choose Edit gt X Y Data gt From File and the Optimizer X Y Target Data popup will appear Figure 6 17 3 Enter in the directory and filter or double click on directory names in the scrolling list to change directory To load a file double click on the file name in the scrolling list or select the file name in the list and click on Load If the file 1s 1n the correct format existing data rows for the curved target are removed and replaced by rows constructed from the X Y data 1n the data file To quickly and easily create a TONYPLOT data format file for the target specify a file name on the extract statement For example extract curve depth abs net outf net doping dat EXTRACT saves the file in TONYPLOT data format Run the deck through using DECKBUILD then load in the saved data file into the worksheet add delete rows and edit the values to create the desired target curve SILVACO International 6 15 VWF Interactive Tools 6 4 2 Deleting A Target To delete a target oH Directory elvis rjw deckbuild Y ef dat Y extract dat Y extract sims dat Y extract srp dat O flash O icons O include lib Deckbuild Optimizer K Target
204. S Abbreviations zt Transition Value Hole Diff coefrt Electron Diff coeff Einstein Rel Corr Elect Preferred linear EE Pps E EE EE A ET ET A ET wea cc T linear Effect Min Carr lifetime eff min car lif e Auger Recom Eff lifetime linear User Recomb Eff lifetime linear linear LCCUERXCIITINMNN IA ECT ETC IA EC EEE eae ES ECT DER wear ser DER eg SS RENNES linear Surf Recom Eff lifetime E linear linear linear E 9 92 SILVACO International linear linear linear DevEdit Default imp refine Impurity Full Name Abbreviations Transition Value MREG 1 On Gs linear Preferred Mat type w o electrodes Sem lns wo elect rodes OO SS Region w o electrodes Celsius Temp Kl D Vector Magnitude UD Vector x comp MEN p Vector Y Comps II IN D EE A Comp BEEN BEEN NENNEN o NENNEN NENNEN o A BEEN o AAA o BEEN BEEN NENNEN BEEN NENNEN BEEN A IS Elec Ionix Eff Field Hole Ionix Eff Field Ratio nie ma aJecarr cone NEN NENNEN KN Ratio EE E Thomson Heat Power MEN Net Doping linear MERE NENNEN NENNEN Total Doping linear We A Charge Concentration linear Heat Flow Density X Dir Heat Flow Density linear SILVACO International 9 93 VWF Interact
205. SERS MANUAL provides full documentation of all available model After a few minutes the simulation will reach the point defined by your most recent selection of the next button The DECKBUILD window should then look like Figure 2 15 etch oxide left p1 x 20 2 deposit alumin thick 0 03 divi 2 etch alumin right pi x 0 18 Extract another design parameters H extract final SD Xj next 1 line stop sel cont run quit Line 81 paste 1 init pause clear restart kill Stop 80 ATHENA etch alumin right p1 x 0 18 um ATHENA struct nautfiles histary24 str ATHENA gt Figure 2 15 The Deckbuild Window Prior to Plotting 2 5 8 Plotting 2 D Structures Now plot the current structure in TONYPLOT using the same procedure from the previous section In other words deselect any selected text and select Tools Plot structure By default when ToNYPLOT starts up it displays the 2 D material structure of the current structure To examine the topography of the structure in more detail zoom to different areas of the device TONYPLOT supports two methods for viewing the impurity concentrations or other solution variables in two dimensional structures These are two dimensional contour plots the default when TONYPLOT is invoked for a two dimensional structure and one dimensional profiles along defined cutlines For this tutorial a contour plot of the net doping will be obtained first and then some plots along cutlines wi
206. SILVACO INTERNATIONAL VWF Interactive Tools DEVICE SIMULATION SOFTWARE SILVACO International 4701 Patrick Henry Drive Bldg 1 Santa Clara CA 95054 Telephone 408 567 1000 FAX 408 496 6080 Internet www silvaco com E Mail support silvaco com July 18 2005 Notice The information contained in this document is subject to change without notice SILVACO International MAKES NO WARRANTY OF ANY KIND WITH REGARD TO THIS MATERIAL INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTY OF FITNESS FOR A PARTICULAR PURPOSE SILVACO INTERNATIONAL shall not be held liable for errors contained herein or for incidental or consequential damages in connection with the furnishing performance or use of this material This document contains proprietary information which is protected by copyright laws of the United States All rights are reserved No part of this document may be photocopied reproduced or translated into another language without the prior written consent of SILVACO INTERNATIONAL SIMULATION STANDARD TCAD DRIVEN CAD VIRTUAL WAFER FAB ANALOG ALLIANCE LEGACY ATHENA ATLAS MERCURY VICTORY VYPER ANALOG EXPRESS RESILIENCE DISCOVERY CELEBRITY MANUFACTURING TOOLS AUTOMATION TOOLS INTERACTIVE TOOLS TONYPLOT TONYPLOT3D DECKBUILD DEVEDIT DEVEDIT3D INTERPRETER ATHENA INTERPRETER ATLAS INTERPRETER CIRCUIT OPTIMIZER MASKVIEWS PSTATS SSUPREM3 SSUPREM4 ELITE OPTOLITH FLASH SILICIDES MC DEPO ETCH MC IMPL
207. TIMIZER will refuse to load the file and an error message appears For this reason always save the input deck and its optimizer file at the same time 6 9 4 Saving The Existing File You can now edit the OPTIMIZER data and save those changes back to the existing OPTIMIZER file or save them as a new file To save the changes to the existing file choose File Save Current File on the OPTIMIZER window Be sure to save the input deck as well if it has been edited Save the input deck using DECKBUILD s File menu SILVACO International 6 27 VWF Interactive Tools 6 10 Printing 6 10 1 Overview To print any of the worksheets or graphics data 1 Press Properties on the Optimizer window and the Optimizer Properties popup will appear Change the Category in the upper left corner to Graphics printer Figure 6 29 2 Select the Destination Type Layout and Page size of the output If the destination 1s Printer also choose the printer queue By default the output will go a file called print out in PostScript format Indexed enabled by default means a unique file name print out is made each time a print is done so previous files are never overwritten Click on Save to permanently save the settings 9 Press Print back on the Optimizer window The output goes to the file or printer specified in Step 2 and contains data corresponding to the current Optimizer mode GN Deckbuild Optimizer properties Category v Graphics printer
208. TOOLS of the SILVACO Framework have been implemented using modern software engineering techniques The INTERACTIVE TOOLS communicate with each other and with process and device simulators through a Standard Structure Format SSF The block diagram Figure 1 1 indicates the INTERACTIVE TOOLS and their relationships to the process and device simulators VWF INTERACTIVE TOOLS users acquire all or a subset of the SILVACO Framework conforming simulators These simulators include SSUPREM3 ATHENA and ATLAS ATHENA is Silvaco s 2D process simulation system It can be used with any combination of OPTOLITH ELITE and SSUPREM4 ATLAS is Silvaco s 2D device simulation system It is used by SPISCES or BLAZE and any combination of the other ATLAS products GIGA LUMINOUS TFT and MIXEDMODE Individual process and device simulators reside in a Simulator Library and are invoked as required by DECKBUILD The following information provides a brief description of each VWF INTERACTIVE TOOL 1 2 1 DeckBuild The Interactive Runtime Environment is the central environment for interactively using process and device simulators It provides many important capabilities A GUI for input deck specification allows you to avoid simulator specific input syntax Information is typed into a series of pop up windows When specification is complete DECKBUILD automatically produces a syntactically correct input deck You can edit the decks at any time Multiple decks are p
209. VACO International Inc Figure 9 25 Device Structure Joined in DevEdit DevEdit Stretch and Cut DEVEDIT has three commands STRETCH SQUEEZE and CUT to modify the structure and to increase or decrease height or width Both commands are available in both the GUI mode and batch mode of DEVEDIT These commands are under Regions in the GUI mode of DEVEDIT STRETCH and SQUEEZE functions allow a line or region to be expanded or contracted along the vertical or horizontal directions For rounded shapes the curvature 1s altered but left intact Stretch does not work as a simple add function otherwise 1t causes a discontinuity in the curvature With an existing structure in DEVEDIT select Stretch Squeeze under Regions The Direction buttons allow for stretching either horizontally left or right and vertically up or down The mouse or keyboard can be used for Start and End locations The Old Size indicates the existing size of the line or region selected The New Size allows you to adjust the region size to either smaller or larger than the existing size SILVACO International 9 31 VWE Interactive Tools Figure 9 26 Stretching an Existing Structure The Cut function works in a similar manner You can select the area using the mouse or keyboard and delete the area Circular Devices DEVEDIT also allows for creation of circular objects Both circles and arcs can be created This feature is unique to DEVEDIT within t
210. ZER to take the log of the result and target before computing the percentage error To change the target type 1 Position the pointer anywhere in the row and double click the SELECT mouse button to capture that row The row will appear raised 2 Choose Lin Log from the Edit pulldown menu The selected row s response type is toggled Since Lin Log operates on all selected rows you can select multiple rows and toggle at the same time SILVACO International 6 17 VWF Interactive Tools Editing The Target Name The OPTIMIZER fills in the target name by default when it is first added to the worksheet The target name is taken from the name token in the extract statement You may want to change the target names to help distinguish them To change a target name 1 Choose Control from the View pulldown menu and the Target control popup will appear Figure 6 20 iy Target control Mode edit Target names Thickness Oxide Wt curve L s x Title Thickness Oxide Figure 6 20 Target Control Popup Edit Mode 2 Change Mode to edit on this popup The scrolling list contains all the target names 3 Click SELECT over the target name to be changed The target name appears under Title Enter the new target name under Title and press Return When you press Return the target name will be updated on the worksheet and on the scrolling list 6 4 4 Enabling Disabling Target The OPTIMIZER allows you to disable target
211. a function of x y and in three dimensional structures z The Join Function calculates the dopant concentration when both an x and y distance exists Set the Join Function to Multiply Select the Y Roll off as Gaussian Dist and Distance 0 048 Select the X Rolloff as Error Function and Constant 0 02 Click on Apply Remember to press Return after entering the numbers ES f 7 E Figure 9 9 Add Impurity Add another impurity region from 3 5 0 to 4 5 0 08 with similar roll off properties Displaying the Doping Back on the main menu there are options to display or Show attributes of the structure The first button defaults to Net Doping and the second button defaults to Off Select the second button to Fine This option shows a relatively fine gradation of doping throughout the structure Coarse Medium and Very Fine display options exist also but be alert that the finer the display the longer the refresh time takes Options under Net Doping includes separate options for donors acceptors and specific impurities One can also select the location of the Contour Legend Modify Impurities The impurity regions added are listed in the main menu at the bottom under User Added Impurities Select the impurity of interest left mouse button then under the Impurities button select Modify impurity A new menu similar to the Add Impurity menu becomes available Using these principles and techniques you can design any device
212. a printout of a structure created 1n DEVEDIT and send that printout to a printer SILVACO International 7 5 VWF Interactive Tools tonyplot devedit str print devedit ps lpr devedit ps o KJ o KJ 7 6 SILVACO International TonyPlot 7 3 The Base Window 7 3 1 Overview The base window of TONYPLOT contains the area where all plots are displayed When there are no plots to display i e when no files have been loaded a banner page is displayed Along the top of the base window is the main menu bar holding the basic control menus for TONYPLOT Each of these menus is explained further below and in some cases in greater detail later on in this manual On line help is accessed by selecting the TonyPlot Help option from the Help menu 7 3 2 File Menu This menu allows access to file control operations as described below These operations consist of loading structures set file control a command stream and exiting from TONYPLOT e Load structure creates a popup see Figure 7 3 which can be used to load structures A list shows the current contents of the directory specified at the top of the popup All subdirectories are shown as folder icons as are all files matching the specified filter Tonyplot Load structure Directory bini toenvplot new figs aug 23 with light str Go up a level 1 Filter 77 Filename with light str Load 71 Dismiss Figure 7 3 Load Structure Popup e The f
213. abilities are valuable for technology design and for calibrating and tuning model coefficients and input parameters used by simulators Control of the OPTIMIZER is integrated into DECKBUILD The use of the OPTIMIZER under the control of DECKBUILD can extend across multiple simulators In other words you can tune input parameters of process simulators to produce specified electrical characteristics from a device simulator 1 4 SILVACO International Introduction 1 2 6 Manager MANAGER is a simple application manager that supports point and shoot and drag and drop use of a variety of files and the support tools The use of this tool is very intuitive For example you can select a structure file using the mouse and drag it to the TONYPLOT icon to plot the file on the screen 1 2 7 SPDB The SEMICONDUCTOR PROCESS DATA BASE SPDB is a separate product not an INTERACTIVE TooL But it can be used with DECKBUILD in a fully integrated manner Refer to the SPDB USER S MANUAL for additional information SILVACO International 1 5 VWF Interactive Tools 1 3 VWF Automation Tools 1 3 1 The Virtual Wafer FAB The systematic development of semiconductor technologies involves two stages First relationships between input variables i e processing parameters and output responses e electrical behavior are established Second this information is then used to obtain optimum responses Examples of input variables are implant doses and ener
214. able SILVACO International 10 1 VWF Interactive Tools 10 2 Starting MASKVIEWS can be used directly from DECKBUILD as a support tool as a stand alone UNIX utility or from within the VIRTUAL WAFER FAB VWF environment Note When starting MaskViews for the first time follow the procedure titled Starting For First Time in From DeckBuild paragraph 10 2 1 From DeckBuild You can start MASKVIEWS from DECKBUILD by selecting Tools Start Maskviews A popup will appear which lists all of the layout files in the current directory if any You can change the directory name and search string and you can select a layout file for loading from the list Clicking on the Start MaskViews button executes MASKVIEWS and loads the selected layout file See Starting MaskViews With An Example Layout File on page 10 3 to learn how to load the provided example layout files The MaskViews Base Window Figure 10 1 appears after a short period 7 Maskviews 2 6 8 NONE dir tmp_mnt writer hankm we Te ATHENA 1993 SILVY4CO International y Figure 10 1 MaskViews Base Window 10 2 SILVACO International MaskViews Starting MaskViews With An Example Layout File If you haven t used MASKVIEWS before you may find it useful to load and later modify one of the provided example layout files Examples can be invoked from DECKBUILD s Main Control menu In the following example a demonstration input deck is loaded into DECKBUILD
215. accessible from the Plot Display windows The Materials popup is described at the end of this chapter Each category is explained in detail and shown in Figures 7 27 through 7 30 7 19 1 Drawing Options Tonyplot Properties Category Drawing options CO Grid level Over plot Under plot Mesh level Over plot Under plot Print colors Default Match screen Mark frequency 1 Log axis numbers ao 10 1e3 Line Widths Graphs 1 Cutlines 1 Edges 2 Junctions 1 vectors 1 Mask Lines 1 Apply Reset Dismiss BS Figure 7 34 Drawing Options Grid level This controls whether the axis grid is drawn on top of the displayed structures or underneath them The axis grid is controlled from the Annotation popup e Mesh level This controls whether the simulation mesh is drawn on top of the displayed structures or underneath them The simulation mesh is controlled from the Display popup for either 2D Mesh plots or XSection plots e Print colors Control colors used when creating color hardcopies If Default is chosen the standard print color is used These are the same as the color used on the screen but on a white background with a black foreground Choosing Match Screen overrides this and print colors exactly match the screen colors e Mark frequency For line plots controls the number of marks or points that are drawn along the curve 1 draws a mark at each and every data point
216. acro COM e Project This is the name of the project you are currently working on This information is not initially known by ToNYPLOT so is blank by default This can be used in titles and footers by using the macro SPRJ As mentioned above some of the environment properties have an associated macro For example your name can be represented with NAM This macros can be used in titles labels and footers Other macros are also available DAT shows the current date STIM the current time and PWD the current working directory 7 19 12 Fonts The fonts used by TonYPLOT on the screen and on the printer or in print files can be selected to any font available on the corresponding output device There are text fields to allow entry of the desired font names and a browser which allows any font to be picked from a list of available fonts Tonyplot Properties Category Fonts SCREEN FONTS Small old r normal 107r vowor Medium old r normal 12 rnv Large old r normal 14r vv vowor PRINTER FONTS Name Helvetica Size Normal Browser Apply Reset Dismiss BS Screen fonts TONYPLOT can not scale fonts used on the screen so three fixed sizes are used and a font must be specified for each Printer fonts For the printer or printer file only one font is needed since printer fonts can be scaled to the exact size needed However for some presentation formats the font may be too small to re
217. act parameters use the correct extract statement syntax not the ATLAS Output statement syntax For example the ATLAS Output statement uses E Field to specify electric field while the extract statement requires the name E Field To extract electric field include the following lines in the input deck Output E Field EXLPece wee IH pubrbye b Field The following table shows the differences between the ATLAS syntax and the extract statement syntax ATLAS Parameter ATLAS Default Extract Parameter Units NET DOPING Mandatory Net Doping ELECTRON CONCENTRATION Mandatory Electron Conc mme OO e Him amp erz Jade deiten ems amer Jade uge Je SILVACO International 5 43 VWF Interactive Tools ATLAS Parameter ATLAS Default Extract Parameter Units ue mue te qe B rie fete PI Optical Intensity Pon Odo qe 5 44 SILVACO International Chapter 6 DeckBuild Optimizer 6 1 Overview The OPTIMIZER is a mechanism that automatically varies one or more input parameters to obtain simulated results using those parameters which match one or more targets The OPTIMIZER runs through a number of iterations until the results match the targets within a certain tolerance The OPTIMIZER uses the Modified Levenberg Marquart algorithm to build a response surface of results versus input parameters as the iterations progress This response surface is used to calculate the input parameter values for each iteratio
218. act routines Custom extract routines do not show units SILVACO International 5 37 VWF Interactive Tools 5 8 Extract Features 5 8 1 Extract Name extract statements should almost always be given names The name must be prepended to the remainder of the extract statement For example extract name gateox thickness oxide thickness x val 1 0 The extract name is used in three ways The name appears on the OPTIMIZER worksheet when you enter the extract statement as a target and on the VWF worksheet as an extracted parameter It can also be used in further extract statements to perform variable substitution The name can contain Spaces 5 8 2 Variable Substitution The extract parser maintains a list of variables each of which consists of a name and a value A name is defined by any previous named extract statement The corresponding value is the result of the statement To refer to a variable s value precede it with a Quotes are optional around variable references except when the variable name contains spaces in which case the must precede the quotes The substituted variable acts as a floating point number and can be used in any extract expression that uses numerical arguments For example extract namee xjl x silicon Jj nc occn 1 extract mame X 2 x srliroon Junc occnos2 extract name deltaXj abs xjl x32 Examples with spaces extract name max boron max conc boron extract name max arsenic
219. action always deals with a logfile that contains I V information produced by a device simulator such as ATLAS Therefore it deals almost exclusively in curves The following section show how to construct a curve or extract values on a curve for all possible devices For the special case of MOS devices both ATLAS and SMINIMOS4 have popups with a number of pre defined MOS tests See Section 5 6 MOS Device Tests for more information Device extraction also deals with structure files which contain information saved by a device simulator e g ATLAS You can extract this information by using the process extraction syntax style shown below The following extracts the total electric field for silicon in a 1 D cutline where x 0 5 for the loaded device structure file extract name test 2d max conc impurity E Field material Silicon x val 0 5 There are some differences between the syntax used by EXTRACT and the syntax used by the ATLAS output command Appendix B Extract and ATLAS Syntax shows these differences EXTRACT allows you to construct a curve using separate X and Y axes For each axis you can choose the voltage or current on any electrode the capacitance or conductance between any two electrodes or the transient time for AC simulations You can either manipulate the axes individually such as multiplication or division by a constant or combine axes in algebraic functions Note The curve manipulation discussed is
220. ad clearly To enlarge the font relative to the plot size select a size from Normal 2 column or 1 column for displaying a plot in a single column or across two columns respectively Browser Click on the Browser button to display a font browser This shows a list of all available screen fonts To choose any font select the line from the list and choose the desired Apply option The filter can be used to reduce the number of fonts displayed in the list TONYPLOT cannot determine the printer fonts that are available so the browser cannot be used to select one you must do this yourself and enter a valid font name into text field on the Properties popup directly 7 66 SILVACO International TonyPlot 7 19 13 Miscellaneous Tonyplot Properties Figure 7 40 Miscellaneous Popup e Refresh When changing many popups at once the redraw that accompanies each click of an Apply button may not be desirable If this is the case set this property to View redraw This means that the view only redraws when Redraw view is chosen from the main View menu If this property is set to Each Apply the default behavior is restored e Electrodes drawn When electrodes are drawn in Mesh plots TONYPLOT indicates them by using a hashing in the defined color for electrodes If this property is set to With names then the names of the electrodes where defined are also drawn at a point near to the actual electrode region e Min Contour Determi
221. ailable within DECKBUILD that allows quick and accurate tuning of simulation parameters Specify any number of input parameters to vary and any number of targets to attain For example it is possible to find a target threshold voltage of 0 75 volts by varying gate oxidation time and Vt adjust implant dose Optimization parameters may come from any simulator in the simulator library and targets from any extracted parameter For example it is easy to set up a deck that auto interfaces from SSUPREMS to SILVACO International 4 3 VWF Interactive Tools ATHENA to ATLAS Then extracted values can be optimized from I V curves while using SSUPREMS or ATHENA diffusion coefficients or both as input parameters Simple graphical worksheet control with interactive runtime display of the optimization in progress makes the optimizer easy to use In addition the OPTIMIZER requires no modification of any kind to the input deck 4 4 SILVACO International DeckBuild 4 2 QuickStart 4 2 1 Overview Although DECKBUILD may seem complicated at first a deck can be built and run using only a few basic controls If new to DECKBUILD please follow this tutorial guide The remainder of the manual can be read for more details on using DECKBUILD after getting familiar with its operation 4 2 2 Starting DeckBuild This section explains how to start DECKBUILD create an input deck run the deck do an interactive plot of the results and save the input deck file t
222. ame lt QSTRING gt x pos extract y_pos_name lt QSTRING gt y pos x pos name and y pos name will default to the name in the main extract Statement with X position and Y position appended respectively EXTRACT TIME extract name lt QSTRING gt clock time datafile QSTRING start time EXPR EXTRACT SIMPLE extract name QSTRING lt EXPR gt datafile QSTRING EXTRACT SINGLE LINE PARTICULAR CURVE FUNC CURVE SINGLE LINE out file lt QSTRING gt SILVACO International DeckBuild Extract EXTRACT MULTIPLE LINE DONE 5 thickness min v lt EXPR gt max v lt EXPR gt lt MATERIAL gt mat occno lt EXPR gt x val lt EXPR gt y val lt EXPR gt region lt QSTRING gt xj min v lt EXPR gt max v lt EXPR gt lt MATERIAL gt mat occno lt EXPR gt X x val lt EXPR gt y val lt EXPR gt region lt QSTRING gt junc occno EXPR surf conc min v lt EXPR gt max v lt EXPR gt lt MATERIAL gt mat occno lt EXPR gt x val lt EXPR gt y val lt EXPR gt region lt QSTRING gt lt IMPURITY gt ldvt ptype ntype min v lt EXPR gt max v lt EXPR gt bias lt EXPR gt bias start bias stop lt EXPR gt bias step lt EXPR gt X vb lt EXPR gt temp val expr soi qSs lt EXPR gt workfunc lt EXPR gt x val lt EXPR gt y val lt EXPR gt region lt QSTRING gt Default values pty
223. ample Suppose a Master file contains values for the four dopant impurities boron arsenic phosphorus and antimony We can use a function to compute the net doping by entering the following as Function 1 boron arsenic phosphorus antimoby However most plots of net doping are shown on log scales this is the default for TONYPLOT so you need to calculate the log of this sum Make sure the total is positive beforehand so use abs to get the absolute value Logl0 abs boron arsenic phosphorus anbimony The data for each dopant however is not useful below values of around 1e12 ToNvPLoT usually does not show values below this level but with a function 1t cannot tell that this is needed Hence we use the MAXO operator to keep the function result within a useful range max 10910 abs boron arsenic phosphorus antimony 129 7 76 SILVACO International TonyPlot Simplify this expression by splitting into two functions and nesting one inside the other as follows Function 1 boron arsenic phosphorous antimony Function 2 max log10 abs Function 1 12 Now plot Function 2 on a Mesh or Cross Section plot it shows the profile of Net Doping clipped at 1e12 The Function popup used to define this function is shown in Figure 7 42 Tonyplot Functions Figure 7 42 Functions Popup 7 22 4 Function Macros To allow further simplification of functions the macro section is provide
224. an electrode statement 4 11 5 Mask Bias Misalignment and Delta CD Mask bias misalignment and delta CD information can be entered in the mask statement to study these effects either standalone or as experimental variables in the VWF environment Bias misalignment and delta CD can be studied together or independently Misalignment shifts the entire specified mask left negative numbers or right Bias and delta cd increase or decrease the width of the mask for positive masks a positive bias delta cd will decrease the width of the etched hole s in the mask A value of 0 for any parameter is equivalent to not specifying that parameter The values have units of microns The syntax is mask name lt region_name gt bias lt value gt 4 46 SILVACO International DeckBuild misalign lt value gt delta_cd lt value gt 4 11 6 Using DevEdit with IC Layout DEVEDIT can use mask region information when running under DECKBUILD to place mesh constraints in areas specified by MASKVIEWS regions An example would be to place a finer mesh in the region under the gate of a MOS device This can be specified from the Mesh Constraints popup of DECKBUILD The resulting syntax is constrain mesh under mask regionname other parameters Note under mask is a misnomer The specified area is a MASKVIEWS region which is a boolean combination of perhaps several masks so the region may not be wholly under or composed of a single mask
225. ance and conductance and the electrical concentration profiles With the exception of 2D extractions all the process extraction routines are available from both 1D and 2D process simulators In the case of the 2D simulators a cross section x or y value or region name used in conjunction with MASKVIEWS determines the 1D section to use Note An error will be returned for attempted extractions on 3D structure files 5 2 1 Entering a Process Extraction Statement To place an extract statement in your process deck select Commands Extract The Extraction popup appears The popup for ATHENA 1s shown in Figure 5 2 ei Deckbuild ATHENA Extract Extract v Material thickness Name Material v silicon All Materials Material name Occurrence 1 Min value Max value Results datafile results final Figure 5 2 The ATHENA Extraction Popup Choose the extract routine you want by activating a choice on the Extract setting The popup changes size and display different items depending on which routine you choose Then enter or choose the desired information for each item on the popup An extract name is always be required Optionally enter the minimum or maximum desired cutoff values by checking Min value or Max value and entering a value By default all extract results are written to a file named results final But using the Results datafile field allows you to specify the results file for each individual ext
226. ance edit modes when OPTOLITH is the target simulator When you select Write file a popup will appear that shows the coordinates of opposite corners of the simulation area initially both will be blank and the name of the output file to be written The corners of the simulation area are selected by pointing to the location on the layout display and pressing the SELECT mouse button After selecting the first corner a rubber band box will be drawn from its location to the current mouse pointer location showing the region to be simulated Once you define the second corner two more buttons will appear on the popup e Write Writes the mask element rectangles to the file specified in the Filename text field Enter a new name in this field if the desired output file name is different than the one indicated e Abort Cancels the write file mode and dismisses the popup Phase and Transmittance Values The OPTOLITH photo lithographic simulator has the ability to simulate the effect of mask elements with different phase and transmittance values MASKVIEWS provides the facility to edit these attributes on mask elements using the special modes selected on the key panel When you select one of the two modes mask polygons from one layout level only will appear with their phase or transmittance values indicated by colors listed in the key To edit the attributes of a mask element first select Edit Mask then point and click to the mask element that
227. ance to abort the reorder If a layer appears more than once on the target list then the elements on the layer are duplicated for all layers after the first occurrence A message is issued if a layer appears more than once warning of such and giving the chance to abort the reorder Editing on the layout screen and some of the popups are disabled while the order layout popup is being displayed The popup can be dismissed without making any changes by clicking on the Done button 10 24 SILVACO International MaskViews 10 7 5 Printouts Hard copy printouts of the complete layout zoomed region and the most recent simulation mask set can all be produced by selecting Files Print The output consists of a large image of the current layout A smaller image of the complete layout if zoom is in operation with arrows indicating what section of the whole the zoom region corresponds to and the most recent masks summary set if one has been produced The layout images drawn are normally produced with the same display mode that is currently selected i e Layers Phases or Transmittances Region images however cannot be drawn and selecting Print while displaying regions have the same effect as printing layers The destination file name and printer type of the hard copy produced are as defined in Section 10 8 6 Printer Properties 10 7 6 On Line Help There are two types of help available in MASKVIEW spot help and the on line manual Spot help
228. and a cross section layout file is copied to the current working directory 1 To load the demonstration input deck to DECKBUILD open the DECKBUILD Main Control menu and select Examples When the DeckBuild Examples window appears select ATHENA Examples Including Process Topography and or Lithography and a list of input decks will appear 2 Double click on anex18 in Simple CMOS Example Using MaskViews and a brief description of the input deck will appear When the mvanex01 in window appears click on Load example button Observe the example input deck loaded into DECKBUILD text window 3 Pull down the DeckBuild Tools menu and select MaskViews Start MaskViews 4 The file anex18 in should be listed in the filebox of the MASKVIEWs Layout Files popup If not click on Refresh and click on Start MaskViews The MASKVIEWS window will then appear Interfacing With A Simulator To load the layout information into DeckBuild 1 Click on the Write file button and define a cutline area by clicking on a start point Then click on an end point This action causes the MaskViews ATHENA cutline popup to appear Click on Write and observe preview cutline popup 2D masks from 2 2 11 6 to 7 8 10 9 appears 2 Pull down the DeckBuild Tools menu and select MaskViews Cut files to observe the MaskViews Cut Files popup You can then use one of the following methods to load the example cutline file Disk Files or Drag amp Drop To use Disk Fil
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230. ariable is re evaluated as lt i aves lt ohange gt 409005 1 where count is the current iteration count of the loop with level lt level gt If the multiplication operator appears the variable is re evaluated as lt initial gt ww lt change gt Count EI where the caret stands for the power operator and is counted as before The lt change gt term defaults to 0 in the addition case and 1 in the multiplication case The lt level gt term defaults to the current loop level This means that if you only specify lt initial gt the variable will be a constant Examples 1 In this example param1 will take the values 1 2 3 4 and 5 loop steps 5 print stmt paraml 1 1 l end 2 In this example Garam will take the values 1 2 4 8 and 16 loop steps 5 print stmt paraml 1 2 l end 4 16 15 SYSTEM Allows DECKBUILD to execute UNIX system commands within a simulation deck Syntax SYSTEM UNIX command Description The SYSTEM command allows you to execute shell scripts or perform other UNIX tasks directly from the simulation deck The command is blocking meaning that the simulation does not continue until the SYSTEM command has finished execution To use this feature enable the SYSTEM commands in the Main Control Options Popup see Figure 4 12 To enable system commands for VWF AUTOMATION TOOLS set the environment variable DB SYSTEM OPTION to any value Examples System rm history str 4 74 SILVACO Int
231. array on the next pass You can also use the delta and ratio clauses to alter a variable on each pass through a loop If you specify delta that value will be added to the variable on each pass If you specify ratio the variable will be multiplied by that value on each pass If you specify an array of values you cannot then specify either the delta or the ratio clauses You can specify a delta clause for a character value This increment must be an integer and will be truncated if it isn t This is an odd concept but is useful when for example you want to use a new output file on each iteration of a loop A few examples will illustrate the idea If the character value is a00 and delta is 4 then the first few values the variable takes will be 400 a04 808 a12 and so on Eventually you will reach the values a92 a96 b00 b04 and so on Incrementing lower case z by one produces lower case a but not upper case A and vice versa You can also specify a negative delta with the obvious results An ASSIGN will persist until you encounter a second ASSIGN with the same variable name If this happens the old ASSIGN will be discarded and replaced by the new one If an ASSIGN is outside of all loops then the value of its variable never changes If it s inside a loop then its variable changes every time a new iteration of the loop begins If you specify the print keyword the current value of the variable will print when initialized and will cha
232. art TONYPLOT only with the names of files that were being plotted when the set file was created Set files cannot record any actions you performed to create overlay plots although they can store setup information about the overlay itself Therefore you must recreate the overlay manually before the set file is loaded For example suppose TONYPLOT is started with two data files as follows Oo TONYPLOL AMLO sSro log and you then overlay these two files Also assume you delete the second plot i e the plot of src Loo leaving a plot of drn log and a plot of both data sets overlaid Then you saved a set file log set To recreate this view in another TONYPLOT window you must enter tonyplot drn log drn log overlay src log set log set This also illustrates the point about not including filenames from deleted plots when restarting 7 82 SILVACO International TonyPlot Note The deleted src log plot was not included in the command to restart TonyPlot Cross section plots that are generated using the Cutline tool can be created from the original 2D Mesh plot using set files Hence it is possible to save a view with a mesh and a cross section and recreate it from the mesh alone For example suppose a user loads a mesh file called pmos str creates a cutline cross section and then saves a set file called cut set The view can be recreated with tonyplot pmos str set cut set The set file automatically takes a cutl
233. as functions of the input parameters are produced Second order polynomial surfaces are currently calculated Integrated Graphics Interactive 2D 3D and 4D color contoured 3D graphics make it easy to view and analyze results Scatter schmoo residual contour and surface plots are available There is feedback between the scatter plots and the worksheet displays Therefore scatter points on the graphics plot are highlighted as the mouse pointer crosses the associated row in the worksheet Presentation Quality Printouts You can print all of the worksheet regression and graphical displays Pagination formatting titling and labeling are performed in a way that allows printouts to be used directly in reports and presentations On Line Help The VWF INTERACTIVE TOOLS all include on line manuals These provide instant access to help with tutorials on use the tools The on line help is not purely text based it includes many graphical images and diagrams that clarify operation and use issues 1 3 4 Productivity Enhancements The VWF AUTOMATION TOOLS increases productivity in ways that are both direct and indirect Many engineers who previously avoided simulation have started to use it Other engineers use it more intensely now that it is very convenient to perform large simulation based experiments Computer hardware is used more efficiently as the VWF AUTOMATION TOOLS submits jobs in parallel using an entire network including overnight and
234. ase if the Start Y value is less than the End Y value In this case the detailed description for each icon can be found by locating the icon in column 1 of Figures 9 33 through 9 33a If the impurity source area is a horizontal line or a point the Y Rolloff icon choices are as seen in Figure 9 34 This is the case if the Start Y value equals the End Y value In this case the detailed description for each 1con can be found by locating the icon in column 2 of Figures 9 33 through 9 33 cHOOY SOTTO OTTO gddOTIOy HOOH sorte CADO 43491108 4401104 ON 4401104 ON 4401104 ON 4401104 ON 4401104 ON 4401104 ON 4401104 ON 4401104 ON 349TT0Y 439T108 Figure 9 33 Rolloff Icon Figure 9 33a Rolloff Icon Start Y End Y Start Y End Y SILVACO International 9 47 VWF Interactive Tools If the impurity source area is a rectangle or a horizontal line X Rolloff icon choices are as seen in Figure 9 34 This is the case if the Start X value 1s less than the End X value In this case the detailed description for each 1con can be found by locating the icon in column 3 of Figures 9 34 through 9 34a If the impurity source area 1s vertical line or a point the X Rolloff icon choices are shown in Figure 9 34a This is the case if the Start X value equals the End X value Rolloff x o i k No Rolloff No Rolloff i X Ko k Rolloff R
235. ask mesh region and electrode information at run time For information on how to start MASKVIEWS and load cutlines see Section 4 8 Tools For information on how to create a layout see Chapter 10 MaskViews 4 11 2 Creating a Generic Deck Generic decks have no geometry information use masks optionally use regions and electrodes and have no horizontal grid information for 2D mesh generation All of this information is quite specific to the cross section that has been chosen through the layout and is contained in the cutline file The horizontal grid information is calculated by MASKVIEWS so that a line with a user specified grid spacing 1s placed at each mask edge and 1s substituted by DECKBUILD at run time Mask Statements The best place to start writing a generic deck is with mask definitions The first step is to initialize the Mask popup with the correct mask names to write the deck properly To do this invoke MASKVIEWS from DECKBUILD using the Tools menu then create or load the layout Create a cross section and store it to a cutline file then load that file into DECKBUILD as shown in Section 4 8 Tools At this point the Mask popup Figure 4 28 should display all the masks 1n a scrolling list Pinning the popup keeps it from disappearing each time a mask is written to the deck iy Deckbuild ATHENA Mask Edit layer Label POLY Name Insert layer o Delete layer Reverse Mask Bias 0 00 5 00
236. at more points over the hypercube For example the midpoint and all the corners A parameter should be the name of a variable in the template deck The names e g param1 cannot be abbreviated They must be exactly as they appear in the template deck The range is two numbers The first is center of the hypercube 1 e the value of the parameter at the middle of its range The second 1s the distance from the center to the edge of the hypercube or half the range of the parameter The points are almost always high symmetry points on the hypercube such as the corners of the hypercube the points where an axis intersects the hypercube and a midpoint along an edge of the hypercube The best way to see the points generated by a DOE type is to use the no exec com mand and setting the range of the parameters to 0 1 Therefore 0 indicates a center point 1 indicates one side of the hypercube and 1 the other side SILVACO International B 6 DBInternal Example no exec outfile tlff dat doe type two level full factorial parameter pl range 0 1 parameter p2 range 0 1 parameter p3 range 0 1 DOE Types The DOE type must one of the following e gradient analysis e two level full factorial e two level half factorial e three level full factorial e face centered cubic e circumscribed circle e box behnken gradient_analysis This type does a simulation at the center point and at the points one positive step along each axi
237. ator EE 5 33 Min Operator with Axis Intercept sse 5 94 Second Intercept Occurrence seeeeeseeeeeee 5 94 X Axis Interception of Line Created by Maxslope Operator 5 94 X Value Intercept for Specified Y 5 33 Y Axis Interception of Line Created by Minslope Operator 5 35 Y Value Intercept for Specified X sss 5 33 Customized Extract Statements DEFAULTS PDT 5 20 O wee 5 7 See also Extract Cutline Control Items ARTE 7 38 eating ME 7 39 Creating Multiple PlolS ie pon anaa 7 39 Cross Sectio WEE 7 39 Index 2 Ris WEE 7 39 A a S 4 35 le UTC 7 40 SNNN ardor tte 7 40 D Data Visualization See TonyPlot TonyPlot 3 and TonyPlot 3D Deck Writing Paradigm ici diia des 4 30 DeckBuild tua did 1 3 2 7 4 1 10 2 o EE 4 40 GOMIMANAS EE 4 30 Tt re EE 4 14 Environment Variables 4 69 Sege EE 4 70 EIERE e dE T TT 5 1 See also Extract Fale lee de des al e nOs de ala 4 1 WINS 4 38 Jee r 4 43 internal Interface EE 4 57 E A 4 20 A scene ieatesacce 6 1 See also Optimizer POOS PE PEPPER 4 1 A 4 10 Remote Simulation EE 4 58 RUNNING A DECK EE 4 8 SMAMSPICS Interface EE 4 56 A e 4 5 4 11 Ener 4 33 UTMOST Interface msc Ee 4 48 Writing SSUPREMS Input Deck 4 5 DeckBuild Commands ASSON fk seca M ck LM qM E 4 60 63 AUTOELEGTRODE EE 4 63 64 ENEE ts shot eL T dm te Au
238. ats key is used whenever a plot of statistical data is present The exact type key varies according to the manner in which the data is displayed e Vectors A vector key indicates the size of arrows and magnitudes that they represent largest smallest and half way between The magnitude of other arrows can be judged by comparison to this key e Levels To distinguish data between levels in an Overlay plot a level key appears whenever there is more than one level These show the level to color relationship for that plot By default overlay levels are distinguished by the name of the file that was used to create each level However these names can be changed to any other name specified by the user 7 20 3 Positioning Key Boxes There are two ways to position key boxes First there 1s the Key Options category of the Properties popup This shows a list of all the types of keys mentioned above and an icon along side each one showing its default location There are six possible default locations use the choice item and or the cycle button to choose the ones desired The default locations are set up in such a way that there are not any overlapping keys When choosing new default locations be aware of the possibility of key boxes overlapping The settings can be saved as the default settings to be used between sessions The second method 1s to position key boxes manually To do this point to a key box on a selected plot and drag the mouse
239. axis drawn depends on the quantities being plotted If log scale quantities are drawn such as Net Doping then TONYPLOT draws a true log scale axis If linear quantities are drawn such as Potential a normal linear axis is drawn If a mix of the types of quantities are drawn TONYPLOT draws both types of axis the log axis appears on the left side of the subwindow and the linear axis on the right When reading values from the curve be sure to use the correct scale For dopants the log axis shows values below 1e12 This value can be changed in the Plot Options panel of the Properties popup see the Properties section 7 28 SILVACO International TonyPlot 7 12 RSM Display The RSM Plot display popup allows control over the RSM response surface model inputs and outputs that are displayed and how they are displayed RSM plots can be drawn in one of three modes 1D graphs 2D contours or 3D surfaces Tonyplot Display RSM Ae H X quantity Linear Leg image defocus Y Quantities Linear Y Quantities Log LT bot B LT bot B Group None Apply Reset j Dismiss Figure 7 18 RSM Popup To draw any RSM plot TONYPLoT samples the input s a number of times to calculate values for the output The number of samples taken which are always regularly spaced is determined by the setting of the Density item Higher densities generate more points creating smoother curves or surfaces but take longer to comp
240. be available on the computer By default TONYPLOT3D tries to use any acceleration it can find More information about var ious graphics hardware can be found in Section 8 7 Operating Platforms 8 2 SILVACO International TonyPlot3D 8 3 Main Window When TONYPLOT3D is started the Main Window should appear Initially the main window displays a TONYPLOT3D banner with copyright information Clicking on the banner will start spinning the 3D text Click in the plotting area again to stop the movement The layout of the Main Window is shown in Figure 8 2 The Main Window provides a number of drop down menus and shortcut toolbars to access the features provided within TONYPLOT3D Table 8 2 describes the different areas of the Main Window Data from mos2ex04_2 str 10 20 40 50 60 0 51 0L 1 7 Hatenals Aluminum Polysilicon si0 2 Figure 8 2 Main Window SILVACO International VWF Interactive Tools Table 8 2 Main Window Options E Ec a Main Menu The menus along the top of the TONYPLOT3D window provide access to pop ups switches and toggles These provide detailed control over the display and setup Some menu options have hot keys These hot keys are denoted with an underscore Use these hot keys to directly access the features To use the hot keys press the ALT key simultaneously with the identified hot key letter 1 e the underscored letter Once you do this press the denoted hot key letter to a
241. be ramped across ranges to create matrices of input decks To enable a variable use the check boxes along the left side of the popup You can then enter the layer name parameter start step and number of steps values for that variable using the displayed fields A warning message will appear if you use a layer name parameter combination as more than one variable The write file sequence is the same as when looping is not active except many files are generated If you enable the Mask Display property option masks sets will appear for all the loop points Maskviews Loop variables Layer Parameter Start Step wi v POLY v Mis alian x wi v MET lv Mis alian y LI LI 2 variables 4 passes 2 active layers Figure 10 10 Loop Variables Popup 10 16 SILVACO International MaskViews 10 5 4 OPTOLITH If OPTOLITH is set as the target simulator the output consists of a series of 2D mask elements taken from one of the layout layers The OPTOLITH module of ATHENA works with rectangular elements only and any layout is converted to rectangles before the output is written Therefore it is advised that the 90 only angle constraint property is used when targeting MASKVIEWS for OPTOLITH sloped lines will be converted to a series of steps As the OPTOLITH module simulates only masks from one layout layer and is interested in phase and transmittance values for each mask element it is most useful to use either the Phase or Transmitt
242. be shown in a plot and choosing the correct subset of this information is essential if a useful plot is to be drawn There are three distinct types of plot each with its own set of display parameters These are 2D Mesh plots XY Graph plots and Cross Section plots The method used to set up the display for each of these is described in the following sections 7 10 1 2D Mesh Plot Display When the 2D Mesh Plot popup appears Figure 7 8 it shows the current display settings for the first selected 2D Mesh plot When the settings on the display popup are applied all selected 2D Mesh plots are affected In this way it is easy to apply global changes to similar plots in the view The popup shows the 9 features that can be displayed in 2D Mesh plots Tonyplot Display 2D Mesh CHE CIS Su Ue a Applv Reset Dismiss Define Figure 7 8 2 D Mesh Plot Popup The icons shown above symbolize from left to right e Mesh The triangular mesh used in the simulation e Edges Sides of triangles classified as region edges e Regions All material regions in the structure e Contours Color plotting of impurity values e Vectors Representation of vectored impurities e Light Light beam and ray information e Junctions Metallurgical junctions in the semiconductor regions e Electrodes Regions defined as being electrodes e 3D Adds elevation to a plot so that 3D surface is plotted e Lines Adds lines dates to plots for ionization
243. before the gate oxidation step In this way we avoid having to re simulate the complete input deck To re initialize to the point of the sacrificial oxide strip select the text shown in Figure 2 12 and press init SILVACO International 2 13 VWF Interactive Tools Hsacrificial cleaning oxide diffus time 20 temp 1000 dryo2 press 1 hel 3 etch REN Hgate oxide grown here diffus time 11 temp 925 dryo2 press 1 00 hel 3 next line icston Fey ent run j paste init pause clear 1 restart ATHENA struct oautfiles histary18 str Figure 2 12 Reinitializing the Etch Statement You are now free to modify the input deck anywhere subsequent to this point Add the following two statements to save two Standard Structure files one before and one after the Vt adjust implant step struct outf gateoxide str struck outf vtiimplant str These lines are added by typing directly into the text edit window at the appropriate points as indicated in Figure 2 13 Hgate oxide grown here diffus time 11 temp 925 dryo2 press 1 00 hel 3 Save the structure after oxide growth struct outf qateoxide str Extract a design parameter extract name gateox thickness oxide mat oceno 1 x val 0 05 Hvt adjust implant implant boron dose 9 5e11 energy 10 pearson Save the structure after Vt implant struct utf vtimplant str next line Ii ston mc cent TESI NE paste init pause 1i elaar
244. ble is being substituted and if a standard DECKBUILD variable is not discovered it is assumed to be a user defined environment variable Synonyms for SET We have introduced synonyms for the SET syntax to provide improved compatability with other products Both of the following syntaxes are valid Assign assign 4 70 NAME lt variable gt N VALUE lt value gt lt expr gt max min ave log log10 lt expr gt lt expr gt lt expr gt lt expr gt lt expr gt lt expr gt lt expr gt lt expr gt SILVACO International DeckBuild sqrt lt expr gt abs lt expr gt exp lt expr gt atan lt expr gt define lt variable gt lt value gt lt expr gt max lt expr gt lt expr gt min lt expr gt lt expr gt ave lt expr gt lt expr gt LOG lt expr gt log10 lt expr gt sqrt lt expr gt abs lt expr gt exp lt expr gt atan lt expr gt These will assign the chosen value or expression to the variable in the same way as the existing SET syntax To reiterate you can substitute the value later using substitution which replaces the variable name with its value when the variable is preceded either by a dollar sign or by the at sign Q Examples The following statement uses spaces and algebraic operators in the variable name set dosetengery 1 set my value 2 set temp 1000 These statements show how to
245. c ce EA LI LUE 4 32 RS CITE 4 64 65 Bo GE 4 67 iiim 4 65 tom Oo 4 65 66 lame 4 67 68 IF END cm 4 67 END EE 4 67 68 BHO teense ts be neste a e do eed ae 4 67 68 i00 Em Eta 4 67 68 MASK A nC 4 68 E WS ta e 4 69 70 eege 4 32 Eau 4 30 Process Simulators oo eee ecc esc eseeeseeeeeeeeeeeeeeaeeeeeees 4 31 32 vica ae ett en eebe 4 70 72 SOURCE eege 4 72 73 SIMT asi t 4 73 74 SYSTEM di dd 4 74 75 TONYPLOT T 4 75 UNDEFINE EE 4 64 DeckBuild Commands 4 60 See also DeckBuild DeckBuild Controls SILVACO International Main Window 4 14 TOXESUOWIA CON EE 4 15 TICS MO Wie 4 18 DeckBuild Features Advanced TOPICS qe ii 4 3 co A tars et os oue tes ie te aoa eas ce 4 2 Eamples and TITTEN 4 3 Execution En 4 3 OPIMIZ ON O 4 3 IMSS cenit 4 2 DeckBuild Main Window Execution Control Buttons 4 15 Menu EI 4 14 DOVEGE oeste A OE Me eL 1 4 A A OE 9 3 See also Base Window Ra TEE 9 39 Sixties UI 9 35 lee 9 5 IMPURITIES em 9 46 WE ln EE 9 7 PIODIOITIS icio so xou tie eo Ee o tee ee CY ita 9 1 REGIONS eto ti 9 36 ROEBOERFUNCGTION uri e 9 51 o eg 9 1 SE 9 2 STATEMENTS tada lidia 9 59 STRUCTURE EDITING aii 9 34 When Not to H EE 9 1 WV RG IOUS Cogeco cere N TENET 9 1 DevEdit Statements BASE MESM A A a a 9 60 BOUNDARY CONDITIONING enm II 9 60 CONSTRAINT MESA etae pea potu ER ve NEE 9 62 UT ds 9 65 BIS Ge WEE 9 65 gd HR D 9 66 IMPURITY gege ra eebe 9 67 IMPURITY REFINE suo oi e ence at 9 71 INTTALIZE p
246. cards any changes made to the popup since it was summoned or the Apply button was clicked 7 90 SILVACO International TonyPlot Uses Input distributions are used in Yield Analysis When ToNvPLOoT takes input samples it uses these distribution parameters to generate realistic values that may be found in a real life scenario For accurate Yield Analysis results each input distribution should be set up so that it matches a closely as possible that found by experimentation 7 26 11 SPC Limits Each output parameter used in Production mode has a set of Statistical Process Control SPC parameters which can be used to monitor the value of some measured value There are five SPC limits upper and lower spec limits maximum and minimum values permitted upper and lower control limits ideal maximum and minimum and center limit ideal value which are abbreviated to USL LSL UCL LCL and CL respectively Values for each of these are sometimes passed to TONYPLOT through the RSM data If not or if they need to be modified the SPC Limits popup can be used to add or modify SPC Limit values for any output and it can be displayed by choosing SPC Limits from the Production popup Define menu Control Items The scrolling list on the SPC Limits popup shows all output parameters and the USL UCL CL LCL and LSL values for each one Underneath the list are five text fields where these values can be changed Use the scrolling list to
247. cation 0 5500 Microns Spacing 0 0000 Microns Done Copyright Q 1997 SILVACO International Inc Figure 9 24 Three dimensional Mesh Creation in Z plane Combining Two ATHENA Structures into a Single Device Since CPU time required to run process simulation is super linear with the number of grid points there can be significant CPU time savings by splitting a large simulation into sections These sections can be joined together at the end of the process simulation using DEVEDIT The JOIN function combines the device currently loaded in DEVEDIT with another saved structure into one device There are controls for aligning the edges of the materials or regions 9 30 SILVACO International TonyPlot 2 6 5 DevEdit 2 4 0 R main striker andys dev master loco Fi File Regions Impurities Mesh v Help ATHENA Data from locos2 str SUED gt t Beate a E Bag TN MT EEN WEE mt VV VIN AY LLL V rn M AAA Be n WV ANS Na SOA ros WN SENS eu e ES ae i scale SS GME IS TS ANNAN er piss enin pur len NNNNNNNNNNSININININIE 1 zal erials i Silicon ili Si02 Si02 Polysilicon Aluminum Aluminum 0 01 0 2 0 Mitxdn 5 0 6 0 7 08 0 01 Mizrons0 3 0 4 IN ES E d Loading file main striker andys dev master active2r SILVACO Interr Impurity Junctions ESSE sl Pe L Lo GE N A d Copyright oO 1997 SIL
248. ccess a specific option For example to open the Display option in the View menu press ALT and V followed by D only Main Toolbar This toolbar complements the pull down menus by providing quicker access to most frequently used options Plotting Area The central portion of the main window is used to display data In this plot area the mouse pointer can be used to manipulate the plot Plot Control Toolbar This toolbar provides quick access to controls that change the way the plot area displays the data i e zoom amp view transformations 8 3 1 Main Menu Options The main menu is described in Table 8 3 Table 8 3 Main Menu Options File A file browser is displayed that allows you to load a 3D structure file Saves all the faces of the 3D elements as triangles in a str file as Saves the bitmap of the Plotting Area in a JPEG file format com pression level 75 The size of the saved bitmap matches the size of the plotting area Save Saves the bitmap of the Plotting Area in a TIFF file format The TIFF size of the saved bitmap matches the size of the plotting area Exit o Exits from Exits from Tonyplot3D 0000 be EE the structure in the Plotting Area with a pre defined pose matrix Zooms into the current structure display Zooms out of the current structure display Show From The Show From option has sub options These sub options are Top Bottom Front Back Left amp Right All these sub options simply mo
249. centage or the same pressure When they are entered as parameters but not linked each parameter 1s varied independently during the optimization run This is not meaningful if the physical diffusions are done in the same environment When parameters are linked together they all vary together as one during the optimization run Do the following to link parameters together 1 Select a row to be linked by double clicking SELECT over that row 2 Select one or more additional rows by single clicking ADJUST over each additional row 3 Choose Link from the Edit pulldown menu Link applies to all currently selected rows The Link operation works by referring the second third and other linked rows back to the first selected row counting from the top down That first row becomes the master row to which all the others are linked Figure 6 10 iy Deckbuild Optimizer NONE edited 1 00 BO Pressure 76 Pressure 1 Pressure 3 78 Pressure 1 method fermi compress diffus time 10 temp 900 t final 1000 nitro press 1 diffus time 60 temp 1000 nitro press 1 00 diffus time 10 temps 000 t final 900 nitro press 1 00 Figure 6 10 Linked Parameters After all rows have been linked the linked parameter titles change The titles are appended with an arrow the line number and the master parameter name For example Pressure 2 becomes Pressure2 gt 78 Pressure 1 Linked parameters all share the same response type and optimized ini
250. changed without need for the plot s to be redrawn completely by changing the title and pressing the Return key This leaves all other items as is and only the titles are redrawn on the selected set of plots Note The choice item must be set to Specify in order to change the titles If Auto is selected titles cannot be changed This allows more than one plot to be changed with the Annotation popup without the titles on all plots ending up the same SILVACO International 7 33 VWF Interactive Tools 7 14 2 Show This item controls features that appear around the edge of the plot The icons represent from left to right x axis ticks and numbers y axis ticks and numbers grid x axis label y axis label and zero lines The large buttons can be used to invert the plot 1 e reverse the positive and negative directions of the x or y axis 7 14 3 Range The default ranges on the X and Y axes are calculated to ensure that all of the data from all structures in the plot can be seen These values can be changed however Selecting Specify rather than Auto enables the axis control items allowing the minimum and maximum values to be entered as well as the division and number of ticks per division For axes that are plotted on a log scale the division 1s always 1 0 regardless of the value entered manually When the axis ranges are specifically set and applied to multiple selected plots all plots are scaled the same This allows easy plot com
251. ck on Add The point is then be displayed in the work area It is also possible to change the location of a point by selecting the point in the Polygon box using the left mouse button so the point is highlighted change the X or v locations by entering the correct location pressing return then clicking on Replace SILVACO International 9 9 VWF Interactive Tools Figure 9 4 Add Region and Constructing a Device Material Selection and Uniform Doping After entering the corners of the region the material and doping need to be entered Use the right mouse button at the Material menu button choose AlGaAs Finally using the right mouse button at the New Polygon select Set Base Impurities then at Doping Type select Generic Donors Acceptors and enter 1e14 by Acceptors then press Return 9 10 SILVACO International DevEdit Add Region Add Mode Etch then Add Add Only Diagonal Lines Allowed Disallowed Name optional Electrode Electrode names r Material AlGa s Color Pattern T 2 Set Base Impurities Doping Type Generic Donors Acceptors Acceptors 1le 14 Donors i Net Doing SE Figure 9 5 Adding Uniform Doping Throughout a Region Setting Mole Composition Fraction Composition fractions for ternary and quaternary materials are defined in the ATLAS USER S MANUAL Appendix B In order to enter the composition fraction for a material in DEVEDIT again go to Set Base Impurities an
252. color of an individ ual ruler You can also show hide and change the color of the individual ticks incre ment marks and their labels 8 5 2 Cutplane The cutplane is a plane 2D slice that s drawn through a 3D structure The cutplane may be used so you can examine the inside of a structure or to perform 2D device within ATLAS An example of a cutplane is shown in Figure 8 15 For more information about ATLAS see the ATLAS USER S MANUAL ATLAS Materials Aluminum Polysilicon siO 2 silicon Figure 8 15 An example of a cutplane 8 26 SILVACO International TonyPlot3D Figure 8 16 shows the Cutplane Dialog The top half of this figure shows the various settings to adjust the cutplane while the bottom half shows the extracted cutplane TonyPlot3D Cutplane Preview Cut Plane from mos2ex04 str Figure 8 16 Cutplane Dialog The exact position of the cutplane is chosen through three cutplane settings The first two settings position the angle of the plane relative to the axis The third setting sets the spatial position relative to the normal on the cutplane The cutplane itself can be drawn solid to visually aid its positioning You can also alter the color of the cutplane While positioning the cutplane you can monitor the positioning continuously as it changes or update it after it has been moved To do this toggle the Drag Type switch i e Interactive or not respectively You can also alt
253. color support by DEVEDIT is used The eight primary colors can be set by name 1 e color red 9 86 SILVACO International DevEdit In hexidecimal digits are 0 1 2 9 4 5 6 7 8 9 A B CD E F Note 0x00 lt 0x09 lt Ox0A lt OxOF lt 0x10 lt OXxA0 lt OxFO lt OxFF Each component should be considered separately 9 13 29 GENERIC PARAMETER IMPURITY Any of the following names can be used for impurity parameters Names can be abbreviated as long as the individual words remain unique in the list A dot can be used as a word separator otherwise multiple word impurities must be quoted The short name 1s the preferred abbreviation Special effort will be made to keep these names unique when adding new impurities Note The number symbol the equal sign the single quote and the space symbol must be quoted Possible Values Default imp refine Preferred Impurity Full Name dpt Abbreviations D i Transition Value Vacancies Tog Dog Interstitrals log ie Arsenic log 1 ed Phosphorus log LSD FDO Antimony og 1 0e 10 Boron tog Le Cees LO Donors LOG Tero Acceptors log 1 0e 10 COMPOSLE VOM Eraction e COMmpet Pact ax Compost ron 2 race 1 On qt COnp rack Electron Cone Process Simulation log Hole Cong Process oimulation log X Velocity Process Simulation XVEL pas Y Velocity Process Simulation y vel p s DEV OZ log Wet O2 Tog
254. colors for different levels and different mark symbols for different quantities this can be reversed by using the Display option property Select color mark or mark color as desired SILVACO International 7 85 VWF Interactive Tools 7 26 Production Mode 7 26 1 Outline TONYPLOT provides the graphics behind the VWF PRODUCTION MODE using a special set of controls and popups With Production mode enabled it is possible to examine and interact with response surface models or RSMs in one two or three dimensions These RSMs can be examined with a selection of PRODUCTION MODE features such as Failure Analysis Disposition and Synthesis An RSM consists of a response parameter sometimes called an output or simply model and a number of input parameters The output is calculated form the inputs according to the RSM definition which 1s passed from VWF to TONYPLOT RSM plots are displayed as either simple XY graphs where the model is plotted against the variation of one input or as 2D or 3D contour plots where the model 1s plotted against two inputs In all cases inputs not plotted are held at fixed values although you can set these fixed values Control of RSM plots is described in the Plot Control section See those pages for an explanation of how to draw RSM graphs contours and surface plots This section discusses the advanced PRODUCTION MODE features available 7 26 2 Enabling Production Mode There are th
255. contains all the labels that have been defined for the selected plot e Label Shows the text of the selected label and is used to enter new text when creating or changing a label Create Click this to create a new label with the text that 1s shown in the Label text field If the field is empty the new label is created with its text set to New label The label attributes are set from the state of the attribute items arrow size etc Note that it is possible to have more than one label with identical text Replace This replaces the selected label with new text and or attributes Use to change the label attributes such as color size etc e Delete Clicking on this button deletes the label that is selected in the list The label is removed from the plot if it has been placed e Arrow When placing a label with a leader arrow the leader can be forced to snap to angles of 45 This is a constrained arrow A Free arrow can be drawn at any angle Direction This determines the direction of the text The normal choice is Right which draws regular text Up and Down draw text rotated by 90 upwards or downwards e Size This controls the size of the letters in the label Three sizes are possible small medium and large Color A color palette is provided for selection of the label color This is used for both the text and the leader line SILVACO International 7 35 VWF Interactive Tools 7 15 2
256. ct both plots so that both are surrounded by the band border 2 Select in TONYPLOT View Make Overlay A third plot now appears as an overlay This new plot shows the profiles from before and after the Vt adjust implant overlayed on a single plot 2 5 7 Continuing the Process Simulation You will now complete the process simulation portion of this tutorial After the polysilicon etch the structure becomes non planar ATHENA switches automatically to 2 D calculation mode resulting in increased CPU requirements Rather than single stepping using the next button use the stop function to perform simulation up to a selected point of interest The Stop At Function A stop point defines a position in the flow of commands where the simulator will stop executing and await your next action When you define stop point selecting the run button or the cont button causes the simulator to execute commands as far as the stop point and then waits To set a stop point position the cursor in the DECKBUILD text edit region on the input line where you want the simulation to stop and select a few characters so that they are highlighted Then select the stop button from the simulator control panel This sets a stop and the Stop line display will be updated to show the line number of the stop You can clear a set stop point at any time by selecting the clear button SILVACO International 2 15 VWF Interactive Tools After setting a stop point con
257. ct done name Sheet cond v bias curve bias 1ldn conduct material Silicon mat occno 1 region occno 1 outfile extract dat After performing the extraction you can plot the conductance curve shown in Figure 2 22 by selecting the file named out file invoking TonYPLOT through the Tools menu of DECKBUILD SILVACO International 2 21 VWF Interactive Tools TonyPlot 2 4 0 File gt View cl Plot Tools T Print ci Properties cl Help 74 a Silicon layer 1 region 1 M Conductiviby vs Poly layer 1 region 1 Bias Data from extract dat Silicon layer 1 region 1 M Conductivity 0 00016 0 00012 1 2 0 6 Poly layer 1 region 1 Bias Loading file u jdoe work extract dat OK SILVACO International 1995 El Figure 2 22 The Conductance Curve Sheet Resistances The n Source Drain Sheet Resistance The statement that causes extraction of the n source drain resistance is similar to the extraction statement used for the junction depth It supplies the following information e A name for the extracted parameter In this case the parameter is named n sheet rho e The name of the parameter to extract For the junction depth you specified xj For the sheet resistance specify sheet res e The name of the material containing the n region In this case it is silicon To be sure you have the correct material layer specify the material occurrence number and the region occurrence number Since the
258. ct name nconc 2 curve depth n conc material Silicon mat oceno 1 x val 1 n conc material Silicon mat occno 1 x val 1 outfile nconc dat SILVACO International 5 35 VWF Interactive Tools 5 6 MOS Device Tests A list of ready made MOS extract statements is also provided Use them directly or make modifications to suit testing needs DECKBUILD allows you to create modify and save tests The following MOS tests are e Vt e Beta e Theta e Leakage e Bvds e Idsmax e SubVt e Isubmax e Vo Isubmax Do the following to access the list of MOS extract routines e ATLAS Choose Commands gt Extracts gt Device and the ATLAS Extraction popup will appear Choose the desired test and click on the WRITE button to insert the test into the input deck Using the User defined option you can enter custom extracts into the popup and save them as defaults When you click the Write Deck button on the Control popup the extract syntax will be written automatically to the deck along with the selected tests Figure 5 5 LH Deckbuild SMINIMOS4 Extraction Vt Extract expression extract name wt interceptimaxslopetcurvelabsivgLabstidin abstvdi 2 0 Figure 5 5 The ATLAS Extraction Vt Popup 5 36 SILVACO International DeckBuild Extract 5 7 Extracted Results Extracted results appear both with the simulator output in the tty subwindow and in a special file named by default results final You can name the file
259. cting Files Cutlines displays a popup that allows you to view previously saved ATHENA mode cutline files Selecting a file in the scrolling list on the popup and clicking on the View button causes a line to be shown on the layout where the cross section was taken If the Cutline preview property has been set to show masks also then a summary display of the masks contained in the file are also shown To view the cutline it must be saved from the same layout name If the names are not identical the cutline view is not performed No changes are taken into account that have been made to the layout since the cutline was saved Editing on the layout screen is disabled while the cutline view popup is being displayed Dismissing the popup use the Done button re enables edit mode again 10 6 3 GDSII amp CIF Import Export The GDSII stream version 6 0 format is an industry standard file format for storing layout information in a file system It provides a hierarchical system of libraries and layout structures which can contain embedded references to other layout structures Elements in GDSII format are in terms of polygons or attributed sticks MASKVIEWS can load individual or hierarchical structures from a GDSII file converting all data to its internal polygon format It can also save the current layout as a GDSII library cell and create new libraries within an existing GDSII file If you select Files gt import gt GDS2 stream format the GDSII
260. ction with one level showing profiles in oxide and the other level showing profiles in silicon Any other type of cutline produces an overlay cross section if the source plot was an overlay plot In this case the new cross section contains one level for each level in the mesh plot For example if two meshes alpha and beta are overlaid and a cutline taken the new cross section plot contains two levels the first level containing profiles from alpha and the second level showing profiles from beta Deleting To delete a cutline the cross section plot should be deleted This removes the cutline from the mesh from which it was created if still present 1n the view SILVACO International 7 39 VWF Interactive Tools Shifting To shift any created cutline except interface cutlines click on the Shift Position button By using the directional arrows on the Cutline tool popup the cutline position is moved up down left or right The amount moved is shown in the Delta text fields which can be modified To use the shift feature the mesh plot that contains the cutline must be selected Movies You can create a cutline movie automatically from the Cutline Tool popup It is created simply by moving the cutline position many times and sequencing the resulting cross sections To create a movie define the step size and number of steps and define whether to move the cross section horizontally or vertically Note that this does not move the actual po
261. ctions popup which can be used to define the functions of the original quantities that can be selected from the choice of Quantities Vectors Vectors can be plotted for standard the default or user defined vectorial quantities TONYPLOT automatically detects the standard quantities made of an X component and a Y component They are shown in the Quantity pulldown menu To create a vector made of unrelated X and Y quantities select the Custom option Vectors are represented on the plot by arrows The direction of the arrow shows orientation of the vector The color or length of the arrow or both shows the magnitude of the vector The Vectors popup Figure 7 11 will appear if you choose Vectors on the Mesh 2D display popup and if you select the Define Vectors Tonyplot vectors Components Standard Custom Quantity EField CHG ea nh Be OpbmponentY Materials Silicon Side Conductor Colors Rainbow 10 Apply Reset Dismiss Figure 7 11 Vectors Popup The items on the popup are as follows e Components This option controls whether to draw standard or user defined vectorial quantities e Quantity All quantities of the structure that are standard vectorial quantities are shown in this pulldown menu This menu is only active when the Components option is set to Standard The list of quantities includes the two functions defined in the Functions popup See Section 7 19 15 Functions for more informa
262. cts directly onto a flow editor This allows a full process flow to be built up visually in terms of graphical icons Any number of layout cross sections and device tests can be added to the process flow at any time The ability to experiment with layout variations in the same way as process variations is a unique and particularly valuable aspect of the VWF AUTOMATION TOOLS Sensitivity Analysis Sensitivity analysis on output values with respect to input parameters is readily performed Parameters are ranked in order of their influence on the output and the effect that each parameter has on the final results is listed A special feature on the split point editor allows a sensitivity design tree to created automatically without any further user interaction Split Points Experimental Trees and Worksheets Any statement parameter in the input deck can be defined as an experimental split point An arbitrary number of different values can be specified for each selected parameter resulting in a tree of experiments A graphical worksheet is generated automatically This worksheet allows you to view input parameters and output results The worksheet supports filtering of values and allows columns to be specified as functions of other columns Input decks are automatically generated for each cell in the worksheet You can add additional experiments at any time by pointing to the parameter to be varied and specify the additional values Simulation results ar
263. cture file to initialize and press init DECKBUILD takes the selected text as a filename figures out which simulator the file came from starts that simulator and executes the proper INITIALIZE statement For example if you were running a ATHENA simulation and saved the structure file ATHENA str you can restart ATHENA if it s not already running and initialize it with that structure by selecting the text ATHENA str anywhere on the screen and clicking on init DECKBUILD then automatically starts ATHENA and executes the statement INIT INFILE ATHENA str Note that the file may exist in another directory If so it s necessary to form the file name properly If ATHENA str is in usr jdoe an and running DECKBUILD from us y select the file name usr jdoe an ATHENA str or jdoe an ATHENA str Note Using the init button while selecting a line in the deck instead of a structure file will result in initialization from history files assuming history files are present for the selected line SILVACO International 4 29 VWF Interactive Tools 4 7 Commands The primary means of accessing popups that are used to write the input deck is the Commands menu Typically each item on the menu is associated with a popup window that contains controls used to specify an input deck command For instance invoking Implant under ATHENA causes the ATHENA Implant popup to appear There are different Commands menu for each simulator The menu always ref
264. curve of electron ionization integral against bias where the first region in the top first layer of silicon is ramped from 0 to 5V and device temperature is set to be 325 Kelvin The resultant breakdown curve is output to the file Nbreakdown dat See the Impact command section and Impact Ionization physics section in the ATLAS UsER S MANUAL for the Selberherr model used in calculation extract Start materrales SiTlratoon matoecnosl bias 0 0 Dias slep 0 25 bias stop 5 0 x val 0 1 region occno 1 extract done name N Breakdown curve bias n ion material Silicon mat occno 1 x val 0 1 region occno 1 temp val 325 outfile Nbreakdown dat The following extraction creates a curve of hole ionization integral against bias and calculates the breakdown voltage corresponding to the point where the hole ionization integral intercepts 1 0 The second region in the top first layer of silicon is ramped from 0 to 20V and the device temperature is set to the default of 300 Kelvin The resultant breakdown curve is output to the file Poreakdown dat and the breakdown voltage is appended to the default results file results final extract start material Silicon mat occno 1 bias 0 0 bias step 0 50 bias stop 20 0 x val 0 1 region occno 2 extract done name P intercept x val from curve bias p ion material Silicon mat occno 1 x val 0 1 region occno 2 where y val 1 0 outfile Pbreakdown dat You can modify the selberherr model parameters using
265. cyan magenta black and white See Generic Parameters for a more complete description PATTERN lt n gt Fill pattern used to display region in DEVEDIT X windows mode See Generic Parameters for a more complete description 9 13 8 FLIP Flip make a mirror image of the device Syntax FLIP X lt N gt Y lt N gt Description Flip make a mirror image of the device around a vertical or horizontal line or both Parameters X lt n gt Flip device around the vertical line x lt n gt Y lt n gt Flip device around the horizontal line y lt n gt Examples flip x 1 point 0 0 becomes 2 0 point 2 2 becomes 0 2 9 66 SILVACO International DevEdit point 4 4 becomes 2 4 flip y 0 point 0 0 becomes 0 point 2 2 becomes 2 2 point 4 4 becomes 4 4 flip X y 2 point 0 0 becomes 6 4 point 2 2 becomes 4 2 point 4 4 becomes 2 0 9 13 9 IMPURITY Add replace or delete an impurity profile analytic implant Syntax IMPURITY ID lt N gt DELETE REGION ID lt N gt ID lt N gt REGION ID lt N gt IMPURITY lt c gt PEAK VALUE lt N gt RESISTIVITY lt N gt REFERENCE VALUE N COLOR lt N gt COMBINATION FUNCTION lt C gt L foL DYDSSN X2 2 N ROBLOEE YeS 65 X CONCENTRATION FUNCTION Y lt C gt COEFFICIENT Y N CONCENTRATION PARAM Y lt N gt CONCENTRATION SCALE FACTOR Y N DN 3ObesNe xoSeNe POLLO Xeece N CONCENTRATION FUNCT
266. d There is a choice between the Levenburg Marquardt optimizer and Adaptive Simulated Annealing Select the method desired Select the input sliders that are to be used in the synthesis not all of them need to be used Unselected inputs will be fixed at their current values when the RSM computations use them Certain operational parameters specific to each synthesis method can be customized to help obtain the required results See the Optimizer Setup or ASA Setup sections for further details Click on the START button to start the synthesis procedure As the calculations progress the latest results achieved will be displayed in the Current value text field A status message describes the current state To abort the synthesis at any point click on the STOP button The procedure is cancelled and reset Results The inputs sliders changes as the synthesis calculations progress When the procedure is complete and it succeeded the input slider positions shows the values of the inputs needed to produce the output value s that were specified in the list of targets 7 88 SILVACO International TonyPlot 7 26 8 Yield Analysis Description Yield Analysis is a prediction tool used to simulate yield in a real life fab TonYPLOT generates large numbers of output measurements from a statistical sample of many inputs By specifying the probability distributions of each input parameter a total distribution of all outputs can be obtained The s
267. d along with associated history file save if appropriate 4 6 4 Setting and Clearing Breakpoints If you want to run the input deck only up to a certain line set a breakpoint on that line DECKBUILD runs up to but not including the breakpoint Set the breakpoint by selecting highlighting all or any part of the desired line then click on the at line option on the stop menu The breakpoint is displayed as Stop on the right side of the execution panel Clear the breakpoint by clicking on the clear button If multiple breakpoints are required in a deck the use of the Monitor Strings option stops the execution at locations marked by selected comments For example if the comment stop here were entered at different positions in an input deck and this string was then added to the enabled Monitor Strings list the simulation would stop at each location with a message 4 6 5 Setting the Current Line As already mentioned the current line is automatically maintained as the deck 1s stepped through and run DECKBUILD places the text caret on the current line each time the line is reset You can set the current line anywhere by selecting highlighting any part of the desired line and clicking on the line button The Line display 1s then updated to reflect the change 4 28 SILVACO International DeckBuild 4 6 6 Pausing Stopping and Restarting the Simulator Click on the quit button to send a quit command down to the simulator If there a
268. d at least two must be selected then choosing Make Overlay from the main View menu A new plot is created containing one level for each plot selected Alternatively if data that is to be overlaid 1s not loaded the new files can be overlaid onto an existing plot as they are loaded Use the Overlay option from the File Loader popup to do this or the overlay option if loading from the command line 7 25 2 Splitting An Overlay An overlay plot can be broken down into separate single level plots by choosing the Split overlay option from the main View menu The overlay plot to be split must be selected when this option is chosen One new plot will be created for each level in the overlay 7 25 3 Overlay Control Overlay plots are controlled just like any other plot It is still a single plot even though several structures are displayed within it Zooming key commands labeling etc are still possible as though only one structure were present 7 25 4 Overlay Display Plot display for an overlay plot is exactly the same as for a normal plot except that multiple data sets are affected All the data sets 1 e every level is displayed according to one common display setting It is not possible for example to show contours in one level and vectors in another Since each level must be of the same plot type the popup used to change the display settings are the same as described for normal plots Some levels may not be plotted if the display
269. d filter on the popup Click on Refresh to refresh the contents of the scrolling list if a new file were just created You can also enter the name of the file next to Filename and click on Load ei MaskViews Cut Files Category v Disk Files Directory tmp_mnt main weston marting Filter sec default sec AMOS SBC 8L Tel Filename defaultsec No cutline loaded Figure 4 23 MaskViews Cuts Files Disk Files Category SILVACO International 4 35 VWF Interactive Tools To load a cutline file via drag and drop 1 Create a cutline file from MASKVIEWS After either writing or previewing the mask the cutline masks will be shown on the 2D masks cutline viewer popup 2 Bring up the MaskViews Cut Files popup Figure 4 24 in DECKBUILD and set Category to Drag amp Drop Both this popup and the cutline viewer popup from MASKVIEWS must be visible on your screen 3 Click and hold the SELECT menu button anywhere over the colored masks on the cutline viewer popup in MASKVIEWS Still holding down SELECT drag the mouse cursor into the large white area in the Cut Files popup in DECKBUILD While dragging the mouse cursor changes into a special cutline cursor to confirm the process of dragging a cutline With the cursor over the Cut Files popup release SELECT The cutline information drops onto the popup 4 To load the dropped cutline click SELECT once on the cutline icon and click on Load Selected icons are shown
270. d generates an experiment from all combinations of individual parameter values The first parameter changes with the highest frequency The final parameter changes with the lowest frequency A parameter should be the name of a variable in the template deck The names e g param1 cannot be abbreviated They must be exactly as they appear in the template deck The type must be either linear power or list SILVACO International B 12 DBInternal The range is three numbers the initial value of the parameter the final value of the parameter and the number of points This 1s used to for the linear and power types In a linear sweep the parameter values are evenly spaced Example 1 Sweep parameter x type linear range 4 7 This generates for x the values e e e e e e A w wU N N dex ES O1 In a power sweep the log of the parameter values are evenly spaced Example 2 Sweep parameter y type power range lel0 1e15 6 This generates for y the values e 1610 e lell e 1612 elel3 elel4 e lel5 The data is a list of values to assign to the parameter Example 3 Sweep parameter z type list data 1 2 5 3 3 1 4 This assigns each of the values one at a time to z The number of trials in the experiment is the product of the number of points for each parameter Example 4 sweep parameter x type linear range 1 4 7 parameter y type power range 1e10 lel5 6 This generates an experiment with 42 trials
271. d here are TONYPLOT DECKBUILD MASKVIEWS DEVEDIT and SPDB The lower normally larger window contains a list of all of files in the current working directory which are recognized by MANAGER This always includes other directory names including the parent and most of the files known to be used with any of the INTERACTIVE TOOLS simulators tools or utilities This window updates automatically whenever files are created or deleted from the displayed directory As the mouse pointer moves over icons on the file window the type and name of the file is shown at the foot of the main window 3 2 2 Changing the Current Directory You can change the current working directory by using either of the following methods 1 Type a new directory name in the Directory field at the top of the MANAGER window and press the Return key The file window will be updated with all of the recognized files contained in the new directory 2 Double click on one of the directory icons The files window 1s then updated with the new directory s contents and the path name displayed at the top of the window 1s updated with the new directory name The directory is used to move up a level to the current directory s parent in the file system hierarchy 3 2 3 Starting Applications To start applications either double click on an application icon or drag and drop one or more files onto an application For example if you want to load ToNyPLoT and display the struc
272. d on the Functions popup It can be used to store common functions and identify them with an easy to remember name The items used to manipulate macros are as follows e Macro List This shows all the macro names currently known to TONYPLOT Select names here to view or edit the macros e Name Shows the name of the selected macro and is used to change macro names and add new macros e Definition This is a small edit window where the full macro definition is displayed New definitions should also be entered using this edit window Create To create a new macro enter a new name and definition for the macro and click on this button The new name appears in the list If the name already exists the old definition is replaced e Delete This deletes the macro that is currently selected int the name list e Replace This can be used to change a macro name and or definition Enter the new text and click on this button to replace the selected macro The macro names can then be used in any function just as though the whole definition had been typed For example in the Net doping example we could add a macro called net_dop and in the definition window enter max log10 abs boron arsenic phosphorus antimony 12 Then we could define either Impurity Function to simply be net dop SILVACO International 7 77 VWF Interactive Tools This makes the function definitions easier to read and also al
273. d under Doping Type select Composition Fractions Enter 0 3 for the Comp Fraction X and press Return The AlGaAs substrate region is now completely defined with geometry doping and composition fraction defined Once done click on Apply Set Base Impurities Doping Type Cl Composition Fractions Comp Fraction X Dr Comp Fraction Y i Figure 9 6 Setting the Mole Fraction SILVACO International 9 11 VWE Interactive Tools Modifying Regions If you want to change a region correct a mistake or have clicked on Apply before all the settings including doping and composition fraction have been entered the easiest method to correct the problem is to modify the existing region When DEVEDIT is displaying the home menu on the right simply left click on the region name in the upper right box then right click the Region pull down menu and select Modify Region The right display lists the existing information in a similar format to Add Region When modifications are complete click on Apply Next add the GaAs cap regions Again under Regions select Add Region Enter a polygon beginning at 0 0 Continue to choose the points 1 1 0 0 1 5 0 05 and 0 0 0 05 To add doping select Generic Donors Acceptors and enter 5e21 by Donors Enter another polygon in the same manner to create the right cap region at locations 2 9 0 4 5 0 4 5 0 05 2 5 0 05 GaAs with the same doping Etch then Adding a Region Next an
274. dated automatically when stepping through or running the input deck initialize from a filename re initialize from history or when explicitly reset DECKBUILD sends lines one at a time to the simulator when the simulator is ready for more input Lines that have been sent to the simulator using the next or run buttons for example are buffered until the simulator is ready to accept them Therefore you can send down an arbitrary number of lines to be simulated all in one go and the lines will be executed in the order received The buffer is cleared automatically whenever the simulator exits See Figure 4 17 for a view of the Execution Control buttons Deckbuild 3 5 3 Beta NONE dir IIED SSS E E co CERRO CHI AC to A ATHENA started ATHENA n Figure 4 17 The Execution Control Buttons SILVACO International 4 27 VWF Interactive Tools 4 6 2 Execution Control Buttons The following describes the execution control buttons e next Sends the current line to the simulator and advances the current line by one line Resets the current line to the currently selected line e stop at line Sets the breakpoint to the currently selected line e stop now Stops current execution after completing the current command and the associated history file s save command if appropriate e cont Continues the simulation from the current line to the end of deck or to the breakpoint if any e run Runs the deck
275. deck The first non comment statement after the go utmost command must be UTMOST TYPE type where type is either MOS BIP DIODE GAAS or JFET When the UTMOST statement is encountered the correct UTMOST module is executed If no UTMOST statement is encountered the MOS module is run by default Note The UTMOST command utmost type type can be replaced by specifying the module type command line flag in the go utmost as below This will append the bip flag to the default UTMOST argument and start the correct module immediately For example go utmost simflags bip The next non comment statement must be a model statement The model statement gives the model file name that UTMOST reads The model file is assumed to exist in the SILVACO var utmost directory Therefore the statement MODEL BS1M3_PMOS reads in the file SILVACO var utmost bsim3 pmos To create this model file run a baseline device simulation load its results IV curves into UTMOST interactively perform the necessary modeling to generate the desired parameters then save the model file from UTMOST Once this has been done with a baseline device the same model file can be used for similar devices For example a large process variation experiment on a device in the VWF can use the same model file for testing all variations Note You need different model files for different devices In other words n versus p MOSFETs Use the INIT command to explicitly load one or
276. dels and effects e Temperature dependence such as kT q or Eg e Concentration dependent mobility with built in temperature dependence e Field dependent mobility perpendicular field with built in temperature dependence e Material work function for MOS structures e Fixed interface charge SILVACO International A 1 VWF Interactive Tools A 2 Concentration Dependent Mobility The concentration dependent mobilities for n and p respectively are i P 44 n nmin 1 TA tul rf D 44 Pp pmin 74N _ _ N total pref where 0 57 Y Hnmin 88 es 0 57 Y Hnmin 54 3 00 Au 1252 aa Pn 300 2 33 a Au SE Lo 2 456 N pef 1 432 10 o E y r N ref 2 67 10 300 A 2 A 7 A 8 A 9 A 10 A 11 A 12 A 13 A 14 SILVACO International A 3 Field Dependent Mobility Model The field dependent mobilities for n and p respectively are Ss EE 414154 10 7 E D p 1 5 35 10 9 E SILVACO International Models and Algorithms A 15 A 16 A 3 VWF Interactive Tools A 4 Sheet Resistance Calculation After solving the Poisson equation the sheet resistance for each semiconductor layer is estimated using right E f dx A 17 sh xleft SEL ea xleft and xright are determined by the p n junction locations and the semiconductor material boundaries A 4 SILVACO International Models and Algorithms A 5 Threshold Voltage Calculation Thresho
277. device mesh from scratch 1t should be saved in both card deck and structure file formats When saved in the command format all original information is retained such as formulas region colors mesh constraints etc Structure files are necessary for use by ATLAS However when a file is saved in the structure file format only the resulting values of calculations are retained pre emptying the possibility of future modification of the original DEVEDIT commands 9 3 5 Loading a Command File Pull down the File menu and select Load In the new window set the filter to LOADING A COMMAND FILE de de unless you do not end all your DEVEDIT Command files with de Set the current directory and file name if needed 9 3 6 Default Files In addition to SILVACO Standard Structure Files and DEVEDIT Command files there are also DEVEDIT Default Option files These files are used by DEVEDIT to reset DEVEDIT options when loading a SILVACO Standard Structure File or when starting DEVEDIT with no file If loading a DEVEDIT command most options return to the active settings when that command was saved 9 6 SILVACO International DevEdit 9 4 Tutorial This tutorial discusses aspects of mesh creation in DEVEDIT It begins by discussing the goal of an efficient mesh for device simulation There are two examples The first example demonstrates how to create a structure The second example illustrates how to create a mesh in an existing structure Thes
278. directly after contact definition using the mask of interest Autoelectrode takes no parameters or arguments It works by inserting electrode statement s at run time using information corresponding to the last electrode mask If the same mask is used to define more than one contact use MASKVIEWS to assign a separate name for each section of the mask DECKBUILD substitutes a separate electrode statement for each contact Thus a single autoelectrode can generate multiple elect rode statements Figure 4 29 shows the use of autoelectrode in a generic deck Notice that DECKBUILD automatically comments out the mask and autolectrode statements from the deck as they are executed by the simulator The comments only appear in the run time output the deck itself 1s not changed 4 44 SILVACO International DeckBuild Note DECKBUILD only remembers the electrodes specified within each mask Therefore an autoelectrode statement must be used for every mask layer where electrodes are defined This defines multiple electrodes for a single autoelect rode statement within the current mask In other words both the source and drain of a MOS transistor could be located on the same metal level v Deckbuild V3 3 tmp_mnt writer hankm myanex02 in dir tmp mnt writer ha go athena region silicon xlo left xhisright ylo top yhi bottom init arsenic conc 2 0e16 orientation 100 space mul 1 implant boron energy 18 dose 2 5e13 diffuse time 60 temp 3
279. displayed structure Panning can also be accomplished by holding the middle mouse button down on the inside the main edit window while dragging the structure vertically or laterally across the screen Editing Summary The capability of DEVEDIT to define structures on the screen is explained in the next three sections Material Doping and Meshing A region is generally defined as a piece of material structure for example a gate an oxide an aluminum contact or a poly layer Adding a material region to the DEVEDIT structure is accomplished by following five simple steps 1 Select the required resolution 2 Select the Add Region mode 3 Select the material its color and doping concentration 4 Draw the region on the screen 5 Click on the Apply button 9 5 2 Selecting The Resolution When drawing the material region DevEdit snaps boundary point locations of the newly defined region to the resolution defined by the drawing grid A drawing grid displayed as tick marks on the Main panel can be overlaid by clicking on the Grid button If a very thin layer 1s required the tick marks may not allow this resolution Increasing the resolution can be accomplished by zooming into the region of interest It may also be useful to split the screen allowing the use of more than one drawing resolution Thus the resolution of the screen should be chosen before adding a material region Note Zooming in can be accomplished mid way through a regio
280. displays the File Loader Options menu This menu has options that allow directories and hidden dot files to be shown or not shown and also provides three criteria for sorting the files in the list by name alphabetically by date newest files first and by size largest files first e Set files Set files Figure 7 4 are used to save the display settings of currently loaded plots This popup allows set files to be both created and loaded It is very similar in appearance and operation to the Load Structure popup except there are no Load options although there is a Save button To create a set file enter a name into the File name text field then click on the Save button To load a setfile use the same methods as described for the Load Structure popup Double clicking also loads a set file Refer to the Set Files section for a more detailed description Tonyplot Set files Directory home robinj solexQ1 Q set solexQ1 1 set jj solex01_2 set soiexQ1 3 set soiexQd set solexQOd Q set solexOd 1 set stellar Filter set Filename Load Save Dismiss Figure 7 4 Set Files Popup e Export a feature that allows data files to be created from plots To export data in this fashion choose one plot that you wish to write to a file and select this menu option The Export popup appears It is possible to export some files as Master files Silvaco format or in user data format Select the option desi
281. drain voltage extract name Yint for IsVd yintercept minslope curve 1 substrate V datan y 5 5 15 Axis Manipulation Combined with Max and Abs Operators The following command calculates the maximum value of drain gate resistance extract name Rdrain gate Max max 1 0 abs g drain gate 5 5 16 Axis Manipulation Combined with Y Value Intercept The following command creates a gate voltage against drain gate resistance and calculates the intercepting drain gate resistance for a gate voltage of OV extract name Rdrain gate at Vg 0 y val from curve v gate 1 0 abs g drain gate where x val 0 0 5 5 17 Derivative The following command creates the curve of dydx gate bias and drain current plotted against and X axis of gate bias extract name dydx deriv v gate i drain outfile dydx dat This further example calculates to the 2nd derivative extract name dydx2 deriv v gate i drain 2 Ooutfrlee dvdx2 dadt 5 5 18 Data Format File Extract with X Limits The following command finds the local maximum in Data Format file for the curve of vin between 2 and 5 volts against power extract name max 2 5 max curve da value vin da value power x min 2 x max 5 outf 2 max2 5 dat 5 5 19 Impurity Transform against Depth The following command calculates the electron concentration in the first occurrence of silicon material for a cutline of X 1 squared against depth fixed extra
282. e e avoid obtuse triangles in semiconductor regions particularly in current path and high field areas e avoid abrupt discontinuities in mesh density e avoid thin triangles the ratio of longest to shortest edge in a mesh triangle should be on the order of 10 but not 100 e use several mesh layers in a material layer particularly for very thin material or doping layers e for most simulations 2000 3000 mesh points are adequate These principles can generally ensure accurate solutions with quick convergence times Poor meshes can lead to inaccurate answers poor convergence times or even lack of convergence leaving you without a solution and causing frustration A significant number of device simulation problems are caused by not adhering to the above principles SILVACO International 9 7 VWE Interactive Tools 9 4 2 EXAMPLE 1 CREATE A NEW STRUCTURE To start DEVEDIT enter devedit amp in a terminal window This starts DEVEDIT in the GUI opposed to batch mode Note the work panel on the right side of DEVEDIT this home panel returns after other functions have been applied In this first example a recessed AlGaAs InGaAs HEMT is created Figure 9 2 DevEdit Graphics User Interface Work Area DEVEDIT starts with a work area that uses a default setting To change the size of this work area use the Menu right mouse button over Regions and select Resize Work Area and a new panel is then displayed on the right
283. e two examples illustrate basic usage of DEVEDIT but not all features are discussed in this tutorial We recommend that you read both examples Finally in this tutorial some advanced features are mentioned The remainder of the DEVEDIT chapter should be used as a reference 9 4 1 Goal And Purpose Of Creating A New Mesh Specifying a good mesh is a crucial issue in device simulation There is a trade off between the requirements of accuracy and numerical efficiency Accuracy requires a fine mesh that resolves the structure in solutions Numerical efficiency 1s greater when fewer points are used The critical areas to resolve are difficult to generalize since they depend on the technology transport phenomena and bias conditions A generalization is that critical areas tend to coincide with reverse biased metallurgical junctions Typical areas that require fine mesh includes high electric fields at the drain channel junction in MOSFETs e the transverse electric field beneath the MOSFET gate e recombination effects around the emitter base junction in BJTs e areas of high impact ionization e around heterojunctions The cpu time required to obtain a solution is typically in proportion to Na where N is the number of nodes and a varies from 2 to 3 depending on the complexity of the problem Thus it is most efficient to allocate a fine grid only in critical areas and a coarser grid elsewhere Additional factors to consider in a mesh ar
284. e word structure is inter changeable with children Displays the rays properties Properties Show Hide Opaque Transparent Solid Meshed Edges Solid and Meshed Properties Show Hide Properties Displays the entire scene Omits the entire scene Opens the Display View Mode see Section 8 4 Display Modes section Displays the entire structure Hides the structure Causes the structure to be opaque Causes the structure to be transparent Causes the structure to be solid Displays the mesh for the structure Displays only the edges of the structure Causes the structure to appear solid and meshed Opens the Object Properties Pop up where you can modify all the above menu options Displays the rays Hides the rays Allows you to show or hide the rays You can also change the draw mode line or cylin der and the linewidth 0 23 VWF Interactive Tools Table 8 10 Right Mouse Menus Show Hide Structure Displays an individual ray s Displays the ray Ray Trace properties 4 Hides the ray Allows you to show hide or change the color of a ray Properties Show Hide Structure Displays the vector sets Shows the vector sets Vector Sets properties Hides the vector sets Allows you to to show or hide the vector sets It also allows Properties you to change the draw mode wireframe or solid and linewidth
285. e 7 17 Cross Section Popup The following items may be specified e Quantity Specifies quantities to be plotted The available quantities are listed in the list that appears on the left hand side of the Cross Section popup window Any number of quantities can be plotted One of two functions may also be chosen These functions are defined from the Functions popup Refer to the Functions section for more detailed information e Options Allows addition of mesh interfaces and or materials to the plot These options are represented by the three icons in the top right of the popup To add any of these features to the plot select the corresponding icon The icons underneath control the way lines are drawn on the graph The icons allow points and or line segments to be drawn e Axis Scales Each quantity that can be plotted on a Cross Section plot has a default flag which TONYPLOT uses to determine whether a Linear or Log y axis should be used If linear and log quantities are plotted simultaneously two y axes are drawn one to show all log quantities one to show all linear These internal flags can be changed using the menu attached to the list point to the list and click on the MENU button to display this menu e Functions Click on this button to display the Functions popup which can be used to define the functions that can be selected from the choice of Quantities Refer to the Functions section for more detailed information The type of y
286. e 8 28 Mouse Tab 8 38 SILVACO International TonyPlot3D 8 6 7 Structure This tab Figure 8 29 can be used to adjust the display properties of the structure It contains the following e Outline Controls To use this function you have to plot your structure in Solid amp Meshed Mode and use the Contours with a Stepped option in the Legend instead of a Linear one When activated it draws lines between steps on the elements e Mesh Width Adjusts the width of the mesh e Transparency Adjusts the transparency of the display e Drag Type Defines whether or not a bounding box is drawn when the object is moved TonyPlot3D Properties Ie Ge Gel 25 ak T E 1 4 Ke E M E Figure 8 29 Struct Tab SILVACO International 8 39 VWF Interactive Tools 8 7 Operating Platforms 8 7 1 SunOS 5 x UltraSPARC and SPARCstations UltraSPARC and SPARC based Systems TONYPLOT3D executes on Sun UltraSPARC and SPARC based systems supported by SunOS 5 7 or higher Operating System This version of TONYPLOT3D requires SunOS 5 7 or higher The command usr bin showrev shows which operating system version is running Graphics Hardware There are two ways of producing screen images One way is a software renderer which uses graphics primitives implemented in software Another way is a hardware renderer which uses native graphics hardware implementing the OpenGL API version 1 1 or higher The software renderer works o
287. e File Type popup Figure 3 4 To open this popup select File types from the Control submenu The scrolling list contains entries for all of the file types that are displayed You can edit an item by selecting one of the rows in this list Other items are as follows e File type This field is a text string that is displayed at the foot of the window as the pointer passes over files of this type in the Files Window e File mask This field is used to mask which files from the current directory are to be displayed as this particular type UNIX search strings separated by the forward slash character are entered here for all file types For example if a file type contains all files ending in std or str then the file mask string would be std str e Default This field is used to automatically start an application when double clicking on an icon of this type The string entered here should be an application name and command line switches so that the correct command line is created once the file name is appended to the end of the string Icon Color Add Delete and Save These fields are the same as those described in the Applications Window see Section 3 2 5 Customizing iy File type masks we ine in IM std str sTD lay Jere dT TS File type standard structurae file File mask 4 str 5 TD Icon structure Default sIlLvACO bin tonyplot st Figure 3 4 File Type Popup SILVACO
288. e Legend properties for viewing and modifying Note Actually there are two legends One for the contours Contours Legend and the other for the regions Region Legend Displays the Probe properties Displays the Ruler properties He Displays the properties of an individual ruler Table 8 9 shows the mouse actions that can be used in the object tree Table 8 9 Mouse Action Functionality Mouse Description of Functionality The left mouse button is used on an icon to expand shrink that branch of the tree You can also use this button over an object name to select it while deselecting all others The middle mouse button is used to select deselect an object name in the tree Sev eral objects can be selected at once by clicking on them You can also use this button over an icon to expand shrink that branch of the tree The right mouse button is used on an object to display a menu which allows you to E change certain object settings See Table 8 10 for a description of these menus L 8 22 SILVACO International Table 8 10 Right Mouse Menus TonyPlot3D Scene Structure Structure Ray Traces SILVACO International Applies to itself and all its children Applies to the structure and all its children The right mouse menu options however are the same for the structure and its children apart from ray traces vector sets and iso surfaces these are detailed seperately Therefore th
289. e Probe View The element face is positioned with the same orientation in the Probe View as it appears in the Main Window SILVACO International 8 31 VWE Interactive Tools 8 5 4 Ruler The Ruler Dialog Figure 8 21 is used to obtain information about quantities within the structure To use the ruler hold down the Control key and the left mouse button where you wish to start Then drag the mouse and release the button where you wish to stop TonyPlot3D Ruler Y 0 179408 jo 480734 ce Siale Lo 40566 0 02134 4 1 400045 400045 Figure 8 21 Ruler Dialog The Start XYZ and End XYZ positions with the difference between each respective pair Delta is shown in the top of the dialog see Figure 8 21 The length of the line Length is also shown Any quantity value present in the structure can also be displayed for the Start and End points along with their difference in the Ruler Dialog To choose a quantity select it from the Quantity menu You can also make the ruler permanent by toggling the Anchor Ruler ON OFF switch To anchor a ruler check the Anchor Ruler box before you draw the ruler Figure 8 22 shows the ruler drawn from the data in Figure 8 21 8 32 SILVACO International TonyPlot3D TonyPl Data from mos2ex04_2 str iE 2028 3 HD Materials Aluminum Polysilicon Figure 8 22 An example of a drawn ruler A ruler indentfier will be created You can anchor several rulers i
290. e Statement The place in the input deck where auto interfacing should occur is marked by inserting an auto interface statement The statement looks like go simulator where simulator is any valid simulator name Consider the following input deck fragment that interfaces from SSUPREM3 to ATHENA GO SSUPREM3 it INIT SILICON THICK 1 2 SPACE 500 BORON CONC 1E14 it DIFFUSE TEMP 100 TIME 20 WETOZ2 it IMPLANT PHOSPHORUS DOSE 1E13 ENERGY 40 PEARSON it GO ATHENA it LINE Y LOC 0 0 SPAC 0 2 TAG TOP LINE Y LOC 0 50 SPAC 0 10 LINE Y LOC 1 00 SPAC 0 15 TAG BOTTOM LINE X LOC 0 00 SPAC 0 10 TAG LEFT LINE X LOC 1 00 SPAC 0 10 TAG RIGHT INIT ORIENTATION 100 AUTO it ETCH OXIDE RIGHT PE West Here an oxide in 1D is grown using SSUPREMS and transfers control to ATHENA to perform the 2D etch At run time the 1D doping profile is automatically transferred from SSUPREMS onto the 2D ATHENA mesh and oxide deposited on top The oxide profile is transferred Probably the best way to create an auto interface statement is to have DECKBUILD create it automatically This is done by placing the text caret in the text subwindow at the point desired to insert the statement Then enable the Write to Deck choice on the Control Pad and click on Select Current Simulator to write the auto interface statement Usually the most convenient time to do this is when finished writing statements for one simulator and beginning to write statements for the S
291. e Triangles highlights all mesh triangles that contain an angle greater than 90 Note When used with RSM plots drawn in the 2D mode only only the probe coordinates and impurity e RSM output value are displayed There is no mesh information available and the find features are not applicable 7 16 4 Movie The Movie tool in TONYPLOT can allow a group of plots to be combined into an animated sequence which can be viewed in playback like a slideshow To create a movie the slides must first be set up This is achieved by simply creating a group of plots in the main TONYPLOT view selecting this group and choosing Movie from the main Tools menu This item is only be available if two or more plots are currently selected A delay is noticed while TONYPLOT creates the movie sequence and messages appear in the frame footer indicated progress When complete the Movie popup Figure 7 26 appears showing the first frame of the movie and a group of control items Tonyplot Movie ATHENA Data from moslex01 O str 0 4 Mins 0 5 SJAJI JL e slow wed ras Frame 1 Dismiss 1 Figure 7 26 Movie Popup 7 42 SILVACO International TonyPlot The size of Movie popup can be changed since this is a TONYPLOT property This is explained in the Properties section The control items are e Video controls The five buttons perform the following functions rewind to first frame play backwards stop at current frame play forwards and
292. e at y grad from curve v gate i drain where y val 0 001 You can also find the area under a specified curve for either the whole curve or as below between X limits extract name iv area area from curve v gate c drain gate where x min 2 and x max 5 5 4 3 BJT Example As a final example for device extraction consider finding say the beta value for a BJT device at 1 10th the current for max beta This example sums up the information presented so far and also introduces the feature of variable substitution First you need to figure out what the current is at max beta Max beta was presented in a previous example extract name max beta max curve i collector i collector i base After this statement has been run extract remembers the extract name max beta and the resulting value Use this information later on using variable substitution In this example you need to get the current or X axis value at max beta to figure out what 1 10th of it is To do this use the extracted max beta as our Y axis target value extract mame Ie max beta x val from curve 1 collector i collector i base where y val max beta Finally extract the value of Ic Ib for Ic max beta 10 extract namese ro rp for Te la max Detal l0 wal Trom curve i collectors ie ea liector An base where X v al gt s 10 max beta 7 10 For more information about variable substitution see Section 5 8 Extract F
293. e behavior of MOS transistors The auto interfacing statement go atlas causes the execution of ATHENA to stop and the execution of ATLAS to start using the structure defined most recently in ATHENA 2 7 1 Defining The Device Physics The next task is to define the physical models that ATLAS includes in its calculations The strategic choices include e whether to perform a bipolar or a unipolar simulation e what transport model to use i e drift diffusion or energy balance e what generation and recombination processes if any to account for After making these strategic decisions the remaining choices center around the specification of model parameters The general case is to include both electrons and holes This choice is required if any generation or recombination processes are to be accounted for If no generation and recombination processes need to be accounted for it may be acceptable to account for only one carrier which in result in faster calculations In this example both electrons and holes are included by specifying numcarr 2 Model carrier transport in the drift diffusion approximation which is the default Other options include solving for electron and hole carrier temperatures or solving for lattice heat flow or both Use a general purpose mobility model that includes the effects of carrier concentration temperature and dependencies on both the parallel and transverse electric fields dependencies This model is nam
294. e called LDD Implant dose on the worksheet To help distinguish the parameter names you may need to change them once entered on the worksheet To change a parameter name 1 Choose View Control Figure 6 8 and the Parameter control popup will appear Figure 6 9 y Deckbuild Optimizer optexD2 in o pt edited add Optimized Minimum Line number Parameter name Ger P Initial value mmm valle valle 42 Vt adjust implant energy linear DA Length etch p1 x linear f fa SD implant dose fa SD implant energy linear us FO diffuse time linear fo diffuse temp linear en 3 Figure 6 8 Parameter View Menu iy Parameter control Mode v edit Parameter names vt adjust implant energy Length etch p1 x S D implant dose S D implant energy Title Gate oxide diffuse time Figure 6 9 Parameter Control Popup Edit Mode 2 Change Mode to edit on this popup The scrolling list contains all the parameter names 3 Click SELECT over the parameter name that needs to be changed The parameter name appears under Title Enter in the new parameter name under Title and press the Return key Once you press Return the parameter name will be updated on the worksheet and on the scrolling list 6 8 SILVACO International DeckBuild Optimizer 6 3 4 Linked Parameters Occasionally it is desirable to link two or more parameters together For instance a series of several diffusion steps in a row might all use the same HCl per
295. e cell values are filled in automatically as the split points complete If some extracts are only intermediate calculations and are not required to be included in the results worksheet the hide flag can be used This prevents unrequired extract results from cluttering the worksheet data The min max extract ranges if defined are examined If any extracted value is out of range then children of that deck fragment any part of the worksheet that uses the simulation results of that deck fragment are automatically de queued and marked with a parent error The fragment is marked with a range error The purpose here is that the system does not waste its time by running any simulation beyond that point in the input deck where the range error occurred for all parts of the split tree that use the particular values of the deck SILVACO International 5 39 VWF Interactive Tools 5 9 QUICKBIP Bipolar Extract QUICKBIP is a 1D simulator for bipolar junction transistors BJT and is fully integrated inside the DECKBUILD environment It is accessed using the extract command and is available for use with any Silvaco simulator The doping profile passed to the QUICKBIP solver should be a bipolar profile At least three regions must exist The top region in the first silicon layer is taken to be the emitter There may be other materials on top of the silicon QUICKBIP can be used with either ATHENA 2 D process simulation or SSUPREMS 1 D process simulati
296. e dimension parameter only The polygon path is always closed even if the first and last points in the list do not coincide Extra sides can be added after the current side by selecting the Add button on the Objects popup Sides can be deleted by selecting the Delete button You can encode objects already drawn on the layout screen as user defined objects by clicking on the Capture button on the Objects popup and selecting the desired polygon on the layout The drawn polygon must be on the current edit layer The object is then encoded so that it will be redrawn again with exactly the same size if the current dimension value is used User objects are converted to polygons as they are drawn Once drawn their original attributes are lost and cannot be altered User objects do not obey the rules of resolution or angle constraint Any shape can be drawn some of which may not be totally suitable for the simulator being used User object placement does conform to the resolution spacing A library of useful shapes e g circles or octagons has been installed in the SILVACO var maskviews directory 10 10 SILVACO International MaskViews 10 4 5 Polygon Editing The Edit menu contains command options used during the edit stages of creating MASKVIEWS layouts The options are Cancel Aborts the current edit action before any changes are made e Move Allows a polygon to be moved Select and drag the desired polygon to its new position and
297. e in subsequent process device simulations The constraints are arranged in a hierarchy global constraints material type constraints and region specific constraints To determine the active constraint in a region DEVEDIT starts with the global value This value can be overridden by a material type constraint which in turn can be overridden by a region specific constraint When DEVEDIT is started all material type constraints default to the global constraints The global constraints have predetermined default values As new regions are added the regions initially default to the material type constraint associated with the regions material Once a value has been set it can be restored to default to the more general level by using a parameter with no value For example MAX ANGLE 100 can later be cleared by using MAX ANGLE All values for the current constraint s can be cleared by using the DEFAULT parameter see Figure 9 49 In addition to this constraint hierarchy there may be rectangular based constraints This areas can be specified with use absolute coordinates using x1 yl x2 and y2 The rectangular area can also be implied in a semiconductor area by using under region under material or under gate AND setting depth 9 62 SILVACO International DevEdit Semiconductor wl Region l Active Val Semiconductor 9 wan ANGLE 90 vos Fees Metal a Region EE lob al Baus ANGLE 180 fol values must be set MAX ANGLE 150 ed MAY
298. e is drawn in the new window as well as the original window Delete selected Plots can be removed from the view with this item All selected plots are deleted This item is only active when at least one plot is selected 7 3 4 Plot Menu The Plot menu provides control over selected plots See Section Section 7 19 2 Plot Options for a description of the menu items The items on the menu can operate on many selected plots of the same type If plots of different types are selected only those with the same type as the first selected plot are affected 7 3 5 Tools Menu Many of the advanced features of TONYPLOT can be accessed from the Tools menu On occasion some of the items on this menu may become inactive This indicates that there is no selected plot to which that tool can be applied Each tool discussed below is described in detail in the Tools section The following descriptions provide a brief summary of their uses e Cutline Cross section profiles may be made from two dimensional data sets Using the Cutline tool generates one dimensional cross section profile plots Also available with the Cutline tool is the ability to move cutlines through a device and watch the profile move and shift as the cutline position updates The Cutline tool also allows these sequences to be combined into a Movie This item is only active when at least one 2D Mesh plot is selected e Ruler Coordinate information can be obtained from the Ruler tool
299. e loaded on auto interface go devedit inflags mesh Simulator flags can be appended to the existing default flags and MASKVIEWS cutlines can also be loaded automatically in the deck using the simflags and cutline arguments respectively For more information and examples see Section 4 16 7 GO 4 42 SILVACO International DeckBuild 4 11 IC Layout Interface 4 11 1 Overview The IC Layout Interface MASKVIEWS allows the building of a deck that can be used to run a cross section from any region on the layout Such a deck is called a generic deck A generic deck is always used in conjunction with the IC Layout Interface which consists of loading cutline information into DECKBUILD The cutline information contains location specific masking information from a 1D or 2D cutline across the surface of the layout taken from MASKVIEWS To use the IC Layout Interface create a layout and a corresponding generic deck The generic deck uses mask information defined on the layout and is identical in nature to the run sheet used in the fab Unlike the typical process simulation input deck it defines the order of process steps and interweaves the mask steps When the generic deck is complete choose a one or two dimensional cross section in MASKVIEWS over the layout This cross section is known as a cutline Load the cutline into DECKBUILD and click on the Run button DECKBUILD automatically uses the cutline information to substitute m
300. e logged automatically to the worksheet which is updated as simulations are completed Experimental Design Parameter values for splits can be generated automatically through the use of experimental design techniques Full and partial factorial random Latin Hypercube and composite designs are presently supported Intelligent Execution The experimental tree structure is exploited to automatically minimize the total required computation Intermediate results are re used for child nodes thereby eliminating unnecessary duplication Filter limits can specified so that branches of a tree are eliminated if intermediate extracted parameter values go outside acceptable ranges SILVACO International 1 7 VWF Interactive Tools Networked Execution Jobs are generated and submitted automatically All the computers in a network are used and subject to various conditions that you can set These conditions include run priorities and available times and days for job submission to each workstation Continuous graphical displays of the status of the network and of experiments in progress are available Automated job submission allows all of a company s networked computers to be used in parallel for simulations and exploits previously idle time such as overnight and weekends Response Surface Analysis Once an experiment has been run the results can be conveniently analyzed using built in regression techniques Formulae that express output responses
301. e met or the OPTIMIZER s initial values were too far off the mark First check the error percentages on each target If most were close but just a few have large error terms then you might consider decreasing the weight of those targets or changing them from linear to log type If those points are part of a curved target you might consider deleting some or all of them On the other hand if the OPTIMIZER fails try better initial values decrease the parameter min max ranges or disable the parameters that have the strongest effect on the results Another common reason for convergence failure is a bad curved target Keep curved targets smooth without excessive points and if necessary cut down the min max range of especially dominant input parameters You can also try increasing the number of iterations but the default value of 4 should almost always be adequate Note As an aid to optimization the OPTIMIZER uses Optimized value as each input parameter initial value after the OPTIMIZER has been run once To use the Initial value once again choose Reset Values on the Parameter Edit menu The optimized values are deleted on the Parameter worksheet 6 30 SILVACO International Chapter 7 TonyPlot 7 1 Overview TONYPLOT version 2 is a graphical post processing tool for use with all Silvaco simulators and is an integral part of the VWF INTERACTIVE TOOLS It can operate stand alone or along with other VWF INTERACTIVE TOOLS such as
302. e of possible options as simple as possible The first level of control is the easiest way to print just click the SELECT mouse button on the button marked Print on the main frame This produces a hardcopy according to the current Print Options The second level of control is provided by setting of the print options The print options control the major choices associated with printing The third level of control allows you to inform ToNyPLOT of the various printers and page layout forms that are required from the print options Typically this third stage 1s performed only once since the printers available and the type of paper they accept changes very rarely Once you set up the printers with the Printer Editor and define the various forms with the Form Editor it is normally unneccessary to use these facilities again Only the Print Options popup is needed for day to day printing tasks For the first time user printing should start at the bottom level and finish at the top Once this 1s done printing can be done from the top level occasionally using the middle level to change print options 7 17 1 Print Options When a print is made of the current view TONYPLOT uses the settings that are shown on the Print Options popup These settings can be changed to use different printers page layouts files etc The Load Defaults and Save Defaults buttons allow the options to be saved so that the same settings can be used between sessions Tonyp
303. e qss lelO workfunc 5 09 x val 0 1 This 1D Vt extraction will calculate the 1D threshold voltage of an n type MOS cross section at X 0 1 where a gate voltage range 0 5 20V was specified while the substrate Vb is set at 0 2V The device temperature has been set to 350 Kelvin extract name D Vt 0 20v ldvt ntype bias 0 5 bias step 0 25 bias stop 20 0 vb 0 2 temp val 350 0 x val 0 1 Sheet Resistance and Sheet Conductance Note For sheet conductance extraction substitute sheet res with conduct e g conduct p conduct n conduct Extract the total sheet resistance of the first p n region in the top first occurrence of polysilicon for a cutline at X 0 1 Polysilicon is treated as a metal by default but is flagged here as a semiconductor semi poly The default device temperature of 300 Kelvin and no layer biases will be used and the incomplete ionization flag is also set for carrier freezeout calculations see Incomplete Ionization Of Impurities physics section within the ATLAS manual extract name Total SR sheet res material Polysilicon mat occno 1 x val 0 1 region occno 1 semi poly incomplete Extract the n type sheet resistance of the second p n region in the top first occurrence of silicon for a cutline at X 0 1 where the second region is held at 4 0V and the device temperature is set to 325 Kelvin These commands use the start cont done syntax to create a multi line statement as described in Section 5 8 Ex
304. e set from the command line using the switches e suprem3 e athena e ootolrth 10 4 SILVACO International MaskViews 10 3 MaskViews Main Window 10 3 1 Layout and Functionality The MaskViews Base Window Figure 10 2 display is composed of up to four sections e The Layout window is the layout area where all layout and simulation actions are performed Unless MASKVIEWS was started with a layout file the layout window is an empty grid e The Control panel is displayed along the top of the screen and contains a series of buttons menus and options which are used to control the actions of MASKVIEWS e The Key panel is displayed on the right side of the window The key panel has several modes and its function change as the mode is changed e The Footnote panel is displayed across the bottom of the window and shows any messages relevant to the current actions The filename of the loaded layout file is shown along the top title bar of the window NONE is displayed if no file has been loaded Whenever you make changes to the layout without saving them the word edited appears in the title bar v Maskviews V2 6 8 NONE 1 1993 SILVACO International jJ Figure 10 2 The Mode Menu of MaskViews Base Window SILVACO International 10 5 VWF Interactive Tools Control Panel Commands are performed by selecting the appropriate option from one of the following menus or buttons displayed on the command panel
305. e the device around in the work area Syntax MOVE DIRECTION RIGHT LEFT UP DOWN DISTANCE N Y Ap ADIUSI SNTI O pYJADJUST SNI Description Move the device around in the work area Does not change the device at all only its relative position in space Parameters DIRECTION RIGHT LEFT UP DOWN DIR Direction to move the device If this parameter is used a distance parameter must also be supplied The default direction is right DISTANCE lt n gt DIST The distance in microns to move the device in the specified direction X ADJUST lt n gt X ADJ Move the x coordinates of all point by adding x adjust x adjust may be negative Y ADJUST lt n gt Y ADJ Move the y coordinates of all point by adding y adjust y adjust may be negative Examples move dir right dist 3 point 0 0 becomes 3 0 move left dist 3 point 0 0 becomes 3 0 move y adj 3 point 0 0 becomes 0 3 move x adj 3 y ad3 3 point 0 0 becomes 3 3 SILVACO International 9 75 VWF Interactive Tools 9 13 16 PROFILE Add replace or delete a 1D profile Syntax ROFILE NAME lt C gt DELETE A NAME lt C gt IMPURITY lt C gt FILE NAME lt C gt INFILE lt C gt DATA POINT lt POINT_2D gt Description Set up a 1 D doping profile that can later be used to distribute an impurity using the impurity card Parameters NAME lt c gt Name is used to identify a 1D profile This field is required in delete mode
306. e6 V cm 036e6 V cm 1 0 unitless 1 0 unitless 4e5 V cm ANZ AP2 BN2 BEZ if E if E XE E Xf E ME NS EGRAN EGRAN EGRAN EGRAN The values of the parameters ANI AN2 AP1 AP2 BN1 BN2 BP1 BP2 BETAN BETAP EGRAN are user definable through the extract command or pop up menu Their default values are SILVACO International Appendix B DBinternal B 1 DBinternal DBINTERNAL is a simple but powerful DECKBUILD tool that allows you to create a Design Of Experi ments DOE from a pair of input files Amongst other things you can create corner models for process parameters or device characteristics or both Any parameters that are to be used as variables must be specified as set statements in a template file Any results of interest should be calculated using extract statements The DOE is specified with simple sweep statements in a separate design file The sweep statement defines which variables are required in the DOE and the range of values these variables are to take The parameter values and the results of each simulation can be stored in a file that can be viewed in TONYPLOT or used as a data base for input to a statistical analysis tool such as SPAYN B 1 1 Example Suppose you have an ATLAS deck resistor_template in for a simple resistor the doping is controlled by a set statement When run this deck calculates the resistance from the gradient of the VI curve go atlas set doping lel6 mes
307. each the final drain voltage of 0 1V by stating the drain voltage Voltage increments greater than 0 1 V are not recommend for initial voltage steps solve vdrain 0 1 The Id Vgs curve can now be calculated To retain this data for additional processing arrange collect it in a log file by using the following log statement log outf moslex01_1 log master This saves the simulated curve to the file mos1ex01 1 109 The statement that causes the Id Vgs characteristic to be calculated 1s solve vgate 0 vstep 0 25 vfinal 3 0 name gate Once you perform the simulation then plot this file using ToNvPLor The graph displayed by TONYPLOT should look like Figure 2 24 TonyPlot 2 4 0 File ci View cl Plot Tools Print cl Properties cl Help 7 o ATLAS Data from mos1ex02 1 loq 5 drain current Aum e 1 5 gate bias V SILVACO International 1995 j Figure 2 24 Device Simulation of the Structure For more information about ATLAS see the ATLAS Tutorial in the ATLAS USER S MANUAL 2 26 SILVACO International Tutorial 2 7 3 Extracting Device Parameters Several device parameters that are used to characterize the electrical behavior of MOS transistors are now extracted These parameters are Vt Beta and Theta The extract statements associated with these parameters may appear intimidating but this does not matter The statements were automatically generated from extract which was selected from the Commands menu
308. eatures 5 32 SILVACO International DeckBuild Extract 5 5 General Curve Examples The following examples assume that they are extracting values from the currently loaded logfile running under DECKBUILD Saved IV log files however can be used directly with extract using the syntax below extract init urtllese tilename Note You can enter extract commands on multiple lines using a backslash character for continuation You should however enter the syntax shown below on a single line although shown on two or more lines 5 5 1 Curve Creation The following command extracts a curve of collector current against base voltage and places the output in icvb dat extract name IcVb curve curve i collector Y pase outfile icvb dat 5 5 2 Min Operator with Curves The following command calculates the minimum value for a curve of drain current against internal gate voltage extract name Vgint Min min curve i drain vint gate 5 5 3 Max Operator with Curves The following command calculates the maximum value for a curve of base voltage against base collector capacitance extract name Cbase ocolliMasc max curve vV Dase base collector 5 5 4 Ave Operator with Curves The following command calculates the average value for a curve of drain current against gate drain conductance extract name Ggate drain Ave ave curve 1 drain g gate drain 5 5 5 X Value Intercept f
309. eca old eee A II eo a ad qtd der Ron bas e 9 74 9 09 15 ANO EE 9 75 A ee ee ee cee ee ee ee ee eee eee ee we eee ee ne ON 9 76 Oe Re EI 9 77 na a EE 9 77 OF SU Os A GO Ir DEE 9 78 9 19 20 RENUMBER REGIONS ij teeth bck oe re e EO aC ac brace ie Te oe aC Pac we hike on 9 80 NES OO UO Tre DULL 9 80 v movie ilie A E E a A a a 9 80 GENEE EE 9 83 Sr AA ea a e a a a a r a a E a ei 9 84 91325 WORK AREA ad E Eod e a uideo a RdA 9 84 A Lm 9 85 9 13 27 GENERIC PARAMETER BOOLEAN TY Pee ee jar ee CR EEN 9 86 9 13 28 GENERIC PARAMETER COLOR lt 0 ke Re P eeh e ee aia deed 9 86 9 13 29 GENERIC PARAMETER IMPURITY Ee 9 87 9 13 30 GENERIC PARAMETER MATERIAL 9 94 9 19 91 GENERIC PARAMETER PATTERN EE EE 9 99 Chapter 10 MASK VIEWS EE 10 1 101 Wee D EE 10 1 10 22 Stanin WEE 10 2 10 2 TETOREDOCKBUIIG s srra as i cue Mosi e Ce Eo oio v er Eon a a aa NEA a E ees 10 2 10 2 2 Using MaskViews Inside The VWF slssesseesee RII 10 4 10 2 3 Starting MaskViews From The UNIX ProMpt o 0oooocococccccccc III 10 4 10 3 MaskViews Main WIDOOW cauia a RR owe xo da ode Dee m RC ees qr dat ra gat p tonc 10 5 10 3 1 Layout and Functionality ENEE 10 5 ROA spo 10 7 10 4 1 Defining Edit Parameters 2 edu REN dE arde ade be RE EE RRE ME aa er x REF Era eR REA 10 7 10 4 2 Defining Layout AA etra die E qti ao ero eege wath eed 10 8 10453 Drawlrig ODIGCIS i peu v battus Ee pr ne eb g
310. ect Options Rescale layout to display Rescale popup This popup has a field containing the rescale value and a Go button Rescale values of 1 0 cause no alteration in the layout Values less than 1 0 cause the layout to shrink values greater then 1 0 expand the layout The circuit size can be returned to its original dimensions by another rescale with the Rescale value set to the reciprocal of the first The rescaling popup can also horizontally or vertically or both invert the whole layout The options listed in the Invert field specifies which direction inversions are to be applied 10 7 3 Zoom and Pan Zoom and pan features are available by selecting Options Zoom amp pan A popup is displayed Figure 10 15 that shows the full IC layout with zoom factors across the bottom and pan Nudge buttons at the side Maskviews Zoom and pan Figure 10 15 Zoom and Pan Zoom is performed by selecting one of the zoom factors listed or specifying an amount in the numeric field X1 causes the whole layout to be displayed The other options cause only part of the layout to be displayed but magnified The layout region currently shown on the main display is outlined by a View box on the Zoom popup You can move this view box either by clicking one of the Nudge directional arrows to pan up down left or right by approximately 5 or by selecting a new lower left corner for the View box on the zoom display using the mouse pointer SILVACO Interna
311. ed DEFINE tokens will occur before each line is executed unless the line begins with a character This also holds for the DEFINE and UNDEFINE lines themselves and has an odd corollary which you can see in the examples section Examples 1 Here is a straightforward example define mypath home john smith tmp logs log outf mypath filel log log outf mypath file2 log This pathology will define black as white define color black define color white 4 64 SILVACO International DeckBuild To get the behavior you probably had in mind do this define Color black define color white 2 Something similar happens with the UNDEFINE command In the next example black is substituted for color in the UNDEF INE command and a no op results define color black undefine color 3 For an UNDEF INE to take effect always use the prefix For example define color black suncdetTfine color 4 16 6 EXTRACT Extracts information from the current simulation Syntax extract extract parameters Description The extract statement is used to extract interesting information from the current simulation See Chapter 5 DeckBuild Extract for a complete description See Chapter 5 DeckBuild Extract 4 16 7 GO Interface between simulators Syntax go lt samulator gt antlags lt gt outtlags lt gt simtlags lt gt cutlrnes noauto Description The Go statement tells DECKBUILD to shut down the curr
312. ed cvt in ATLAS Also include the effect of Shockley Read Hall SRH recombination using the ATLAS srh recombination model Define the gate contact to be n type polysilicon and define the work function associated with the gate using the command contact name gate n poly Define the fixed charge at the Silicon Oxide interface to be 3e10 using the statement interface qf 3el10 Printing of status information to the tty region of DECKBUILD is enabled using the pseudo model print These models and options are selected using are selected using the command models cvt srh print numcarr 2 2 7 2 Performing The Device Simulation The LDD MOSFET is now ready for device simulation and its electrical characteristics can be calculated for specified bias conditions in ATLAS In this example calculate an Id Vgs curves for Vgs between 0 V and 3 0 V with Vds held constant at 0 1 V From this data extract several parameters that are used to characterize the behavior of MOS transistors The device simulation proceeds in three steps The first step is to obtain an initial solution at zero bias The second step is to apply the constant drain voltage with zero gate bias The third step is to increment the gate voltage with the drain voltage held constant The first step is accomplished with the solve init statement which solves the device at zero bias solve init SILVACO International 2 25 VWF Interactive Tools In the second step solve the r
313. ed Features 1 7 Process SIMI le EE 2 7 Comparing Structure Files cedo ho ence ees 2 13 AAA a 2 15 EE aoi hit hace uS Decano a te Lee cR E M DD 2 17 UTI Pl taria 2 18 Extracting Parameters cnica 2 19 Piston FUNCION WE 2 12 Overlaying E 2 15 Plotting 2 D Structures occcccocccccoccnoccncnccconcnoncncnnonanenos 2 16 Plotting Structures a 2 8 mine epp 2 7 USING kel Ve 2 9 Process Simulators SE leier 4 32 Writing Process Input Decks 4 31 Vim ua ONS cmn e o ER RON HI UE IE 4 32 Production Mode ASA SOUD curiosa 7 93 END a a 7 86 Experimental Adr eege eege 7 91 allure EE 7 87 Input Distributions rq 7 90 Input Parameter Ranges solid 7 89 DU gel EEN 7 87 Index 7 VWF Interactive Tools Interactive RSM Control GIU MENTRE NS gioco SEG EIER rl synthesis MIGIGUAMGIN SIS anra a Production Modes Optimizer Setup Q Quality Printouts See also Advanced Features Automation Tools QUICKBIP Bipolar EXACT EE See also Extract R REGIONS Deleting Deleting Boundary Points Drawing MOM eee ET Regions Editing Electrodes Regions Meshing Example 1 Adding Electrodes Etch Ber Adding asea N Material Selection and Uniform Doping MOANING sa ea e a EE Setting Mole Composition Fraction Remote Simulation Options Troubleshooting Remote Simulation See also DeckBuild Resetting The Current L
314. ed in the case of a 3 D structure DEVEDIT has to be invoked in the 3 D mode for this case to apply by entering devedit3d amp X Y and Z parameters should be specified in the case of a 3 D doping objects being added to the structure As in the 2 D case this action is controlled from the Add Impurities control panel as shown in Figure 9 32 9 40 SILVACO International DevEdit 9 9 MESHBUILD MESHING 9 9 1 Overview A structure can be meshed by selecting the MeshBuild option under the mesh button The MeshBuild code originated from ETH Zurich and has been enhanced for use inside the DEVEDIT environment Meshbuild starts with a mesh adapted to the defined boundary Efficient meshes require that the boundary is conditioned before meshing This means the boundaries are altered slightly to accommodate the meshing algorithm Meshbuild allows the selection of arbitrary boxes in space for either manual mesh refinement or manual mesh relaxation Meshbuild can be passed a solution quantity on the mesh 1 e boron concentration whereby it automatically refines the mesh based upon the gradient of the quantity A structure can be meshed by selecting the Meshbuild menu option under the Mesh menu Note Boundary conditioning is strongly advised just before meshing any structure although it is not essential During the mesh routine an ETH Zurich Meshbuild Acknowledgment screen appears The meshing can be canceled at any time with the Cancel but
315. edit and manipulate the tty subwindow and is like the text menu Choose Find and Replace from under the Find menu item Searching is done the same as with the text subwindow iy Deckbuild Main Control Category Control Pad Formatting Set Current Simulator v ATHENA With Options Exec Simulator Auto Interface Set Current Simulater SIMULATOR CONTROLS Init from History History Props Plot Current structure Plotter Props Start simulator Show currently executing line Off Save as defaults Aute MaskViews Select cutfile No active structure Figure 4 10 Main Control Popup Cut Paste And Copy You can copy and paste text in the tty subwindow directly by using the Edit menu from the tty menu or by using the corresponding keys if available Cutting is not allowed on any but the current command line however since the remainder of the subwindow contents are read only 4 18 SILVACO International DeckBuild Saving Resetting The Contents To reset the contents of the tty subwindow that is remove the log and clear the subwindow bring up the tty menu and choose History Clear log Figure 4 10 To save the contents of the tty subwindow bring up the tty menu and choose History Store log as new file Note History on this menu refers only to the contents of the tty subwindow and is not related to DECKBUILD s History feature Error Messages The Error Messages section at the end of this chapter contai
316. eeessaeees A 4 MA A A 5 Camera Dep e 8 34 aie mr aa 8 34 Index 1 VWF Interactive Tools vez ro RE 8 34 Cartesian Graphs eic CETUR 7 27 snc ce 7 26 EE ee dedicada 7 26 Wy UGGS EE 7 27 Channel Surface Impurity Concentration 2 23 A a ET 4 32 7 62 7 63 A ET 7 61 GEIER eege 7 63 Sr 7 62 See also Properties Command File DA aa boba ld Eno a ET ELT 9 6 See also File Control Command Stream FASANO RE 7 72 RIGID eege 7 72 Concentration Dependent Mobility A 2 Conductance vs Bias ti 2 20 Contours Data Constraint Settings 8 12 See also Display Modes Controlling Plots See 3D Plot Control and Plot Control Cross Section Display EE 7 28 Curved Target Creating eee R 6 14 Creating from a Data File isis di 6 15 Curves Abs Operator with AX S d 5 34 AVG ODCIAIO RR D siete 5 33 Axis Manipulation Combined with Max and Abs Operators 5 35 Axis Manipulation Combined with Y Value Intercept 5 35 Axis Manipulation with Constants sssssss 9 34 Ce EEN 5 33 Data Format File Extract with X Limits 5 35 BI IE eT E 5 35 Gradient at Axis Intercept oocccccocccccocnncconnnnccnnnnnnnnos 5 34 Impurity Transform against Depth sssssss 5 35 EN g TEE 5 33 Max Operator with Axis Intercept esses 5 34 Min Oper
317. efine the targets 3 Optionally define the setup information 4 Start the optimization 6 2 2 The Optimizer Window The Optimizer is controlled from the DeckBuild Optimizer window Figure 6 1 To display the Optimizer window select Main Control Optimizer 6 2 Mode v Setup Co Marquardt parameter Marquardt scaling Function evaluations Jacobian evaluations Gradient norm sum of squares difference F C difference RMS error 95 Average error 95 Maximum error 595 Iterations Terminatian cade Deckbuild Optimizer NONE Figure 6 1 Optimizer Window in DECKBUILD SILVACO International DeckBuild Optimizer 6 2 3 Optimization Modes The Mode menu is located at the top left of the Optimizer window Figure 6 2 This menu is used to select the five screens displayed in the Optimizer window Deckbuild Optimizer NONE E Initial value stop criteria LUE value Jacobian evaluations Gradient norm sum of squares difference F C difference RMS error 95 Average error 95 Maximum error 595 Iterations Termination code Figure 6 2 Optimizer Modes The five modes in this window are e Setup Optimization setup worksheet e Parameters Input parameter definition worksheet e Targets Target definition worksheet Graphics Graphical visualization of the optimization run e Results Worksheet of parameter and target values for each iteration of a run You can
318. el the quit and save the file You can either save to a new file or if already editing a file save edits back to the same file To do this select the corresponding option under the File menu See Sections 4 18 1 Text Subwindow Error Messages and 4 18 2 TTY Subwindow Error Messages for more information It is often important to know whether there are unsaved edits and exactly which file is being edited DECKBUILD displays the file name in the header bar or NONE if the file is not edited yet When first saved to a file it becomes the edited file The word edited follows the file name if there are unsaved edits 4 10 SILVACO International DeckBuild 4 3 Invoking DeckBuild 4 3 1 Syntax deckbuild s3 an as od de fa ma hi mo C E il se qo 7 option no exec nolauto ne commands nolwrrte ascia simver lt simulator_version gt run outfile outfilename cutfile lt cutfilename gt optfile lt optfilename gt remote hostname editfont lt font gt 1 nprpe lt imput pipes outpipe lt outpue pape psnoplort M herp xview arguments textedit arguments filename 4 3 2 Description You can start DECKBUILD in either an interactive mode or a batch mode In the interactive mode it 1s possible to create edit and run input decks using mouse and keyboard operations In the batch mode DECKBUILD runs a previously created input deck In the interactive mode DECKBUIL
319. elected in the figure above e Whether the simulation grid is overlaid on the graph e Whether the interface between different regions and materials are delineated using lines or different colors or both for different regions e Whether the graphs have symbols displayed at the data points or have the data points connected or both Changes defined in the display window only affect the displayed plot after the Apply button is selected The Reset button resets the controls to the state they had when the display window was first displayed Experiment with making changes to the displayed plot Use the Dismiss button to remove the Display window when you have finished experimenting 2 10 SILVACO International Tutorial Zooming And Panning You can inspect the regions of the graph in more detail by zooming in on the area of interest To zoom in select a rectangular area of the graph by using the mouse Using the left mouse button select the lower left corner of the region of interest Keeping the mouse button depressed move the pointer to the upper right corner of the region of interest and release the button The graph is replotted showing only the newly defined region of interest Figure 2 9 shows the details of the doping concentrations in the oxide TonyPlot 2 4 0 File cl View cl Plot ci Tools 7 Print ci Properties cl Help 7 ATHENA Data from deckbDA amp a07682 A A Phosphorus cim3 Boron cm3 Het Doping 7cm3
320. ell Drive Diffusion step You can now make corrections or modifications at any point downstream and re simulate As an example of a downstream change we will change the Well Drive time from 220 to 200 The edited command should look like this diffus time 200 temp 1200 nitro press 1 Use the next button to step through the modified process flow To continue with this tutorial proceed with the simulation until you have again extracted the gate oxide thickness Note Meaningful process simulation steps are steps that change either the topography or the dopant concentrations of the structure For example implant and etch Non meaningful steps are steps that simply interrogate the simulator for information For example writing structure file or extracting a parameter 2 12 SILVACO International Tutorial Explicitly Saving State The history files are very useful during an interactive session But they may become invalid due to changes to the input deck Also they do not have descriptive names that make them easy to associate with particular points in the process flow You can avoid these problems by saving the state of the simulation at any point to a file whose name you specify A structure file named bpsg_dep str is generated by the command struct outfile bpsg_dep str Note Standard Structure files must have a st x extension It is a good idea to perform a user defined save immediately following major process steps that are ti
321. en to the file results final in your current working directory When the simulation is complete you can review the values of the extracted parameters by printing or viewing the results final file Device Threshold Voltage The extract capability is now used to calculate the threshold voltage For this extraction you need to specify e The name assigned to the extracted parameter Use the name n1dvt the n type one dimensional threshold voltage e The name of the parameter to be extracted For this example threshold voltage the parameter is LONE e The device type In this case you have an n type transistor and so you specify ntype e The backbias voltage vb which you set to OV e The trapped charge Oss which you specify as 1e10 e A point along the channel where the threshold voltage is extracted Specify the point x 0 49 which is just short of the right hand edge of the simulated device The one line extract statement used to calculate the threshold voltage is extract name nldvt ldvt ntype vb 0 0 gss lel0O x val 0 49 This statement yields a result of nldvt 0 671481 V X val 0 49 This result is saved to the results final file Conductance vs Bias The next example extracts the curve of conductance versus applied bias This example is more complicated than the previous two examples because 1t involves the use of two extract statements The first statement sets up the biasing conditions The second statement extracts the conductance
322. eneri eran sala a ER tar cce leat SEEN ERAS 2 19 2 6 Completing The Device Structure 2 24 2 1 Device SIMUIANON ee Ee aia 2 25 2 11 Defining BREET 2 25 2 7 2 Performing The Device Simulation III 2 25 2 f 9 EXTACIna Device Parametere sea sie idque Sra deir arica 2 27 2 0 GOING PUEIDOL s riada ini 2 28 SILVACO International V VWF Interactive Tools Chapter 3 Mariela RE E Eat PT CO OO TA UE ER anne waa owen neds EC EUES 3 1 3 I Eden ET EEN 3 1 3 2 USING A E NET LEE 3 2 3 2 1 Fil and Application WINDOWS EE 3 2 3 2 2 Changing the Current Directory 0 0 0 cc rennen nanana 3 2 3 2 3 OlanlING ele Tele EE 3 2 A E 3 2 325 GUSIOMIZING ics dao ee LI ed dus bo Sarton ae E 3 3 32 0 ADDIICOIIOFIS Ee Dee Ee 3 4 Do PARIG IV DCS eebe Ameiva Mia eos SUUS neh ee 3 5 Chapter 4 DECKBUNG WEE EE 4 1 Alo MINEO CUUIG a il 4 1 BMA OVCWICW A E Ae O reen 4 1 4 1 2 De kBuild S F le ctra pra ha eee Cae beta od Geos ewes mee ehh ee RS 4 1 EE 4 1 T2 QUICK Sta arar dr dto a A aia 4 5 AS A A peed dts 4 5 RS eu DAT Ee EE 4 5 42 3 Writing a SoUPREMS EE cata ie E 4 5 42A RUDPIDd EA CCK EE 4 8 12 55 Quitting DECKBUIG EE 4 10 4 3 INVOKING DECKBUNG ER 4 11 ES O AA iA ok ee he eae de a ee pep ek ee ks 4 11 Reie EE 4 11 lee 4 11 44 DeckBulla CONTOS EE 4 14 4 4 1 Main Window Layout oda ca EX ERR Gu eae YD Rua stp S es va Oe 4 14 4 4 2 Text amp TTY SUBWINGOWS EE 4 15 4 4 3 Using the Text Subwindow EE 4 15 4 4 4 Using the TTY Subwindow
323. ensity 5 5 5 x Apply Cancel Figure 8 12 Vectors Display Mode Use the Quantity menu to display a particular vector quantity The number of samples along each axis can be altered with the respective box for x y and z Once you choose the particular vector to be displayed it has to be created To create it click on the Create button The dialog box describing the vector quantity will appear next to the Create button see Figure 8 12 To have several vector quantities displayed simultaneously create each vector separately You can control the way vectors are displayed by using the Draw Mode In wireframe mode a line is used to display the vectors In Solid Mode the vectors are drawn as cylinders and cones solid arrows Linewidth changes the thickness of the vector lines Vector Length and Vector Radius change the length and radius of the vectors respectively The radius corresponds to the size of the arrow at the end of the vector Figure 8 13 shows an example of vectors in a plot 8 18 SILVACO International SILVACO International p UDINE ET Figure 8 13 Example of Vectors in a plot TonyPlot3D 8 19 VWE Interactive Tools 8 5 Tools 8 5 1 Object Editor The Object Editor displays the objects in the current scene The components of the structure follow a hierarchal tree formation see Figure 8 14 Depending on what data is present in your structure and what is viewed some of the objects listed below
324. ent Impurities panel The lower the number the more triangles that are generated 9 10 4 Mesh Constraints The final operation 1s to set the mesh constraints To do this pull down the Mesh menu and select Mesh Constraints In this example it is assumed that obtuse triangles are acceptable in all regions except in the semiconductor First select the All Regions and set the Max Angle to 180 either using the slider or entering in the value This causes generation of far fewer triangles and points However because most simulators give poor results or no results at all if there are obtuse triangles in the semiconductor the semiconductor regions need to have a stronger restriction Select Semiconductor Regions and observe that the Max Angle reads 180 0 To override the All Regions setting select the check box to the left of Max Angle and set it to 90 0 This value can be overridden in a specific semiconductor region by selecting that region explicitly and setting its values 9 10 5 Final Meshing At this point DEVEDIT 1s ready to mesh click on Done To mesh pull down the Mesh menu and select Meshbuild Since MeshBuild is the default action on the Mesh menu it can also be selected by simply clicking on Mesh DEVEDIT now produces a mesh A Cancel button is shown during meshing in case an unreasonable meshing parameter was supplied and it is readily apparent that too many triangles are being produced 9 10 6 Saving the Silvaco Standard St
325. ent simulator and start up the specified simulator when the statement is executed It is used to auto interface between simulators simulator can be ssuprem3 athena sminimos4 atlas devedit utmost neurofab inflags specifies new load command flags for autointerface SILVACO International 4 65 VWF Interactive Tools outflags specifies new save command flags for autointerface simflags specifies flags to be appended to default simulator argument cutline specifies a MASKVIEWS cutline file to be loaded into DECKBUILD noauto specifies that no autointerface occurs for this go statement Examples If the current simulator is SSUPREMS then this statement causes DECKBUILD to quit SSUPREMS3 and start up ATHENA go athena This will replace the default flags used in ATHENA auto interface command with master when loading and flip y when saving go athena inflags master outflags flip y Note One or more flags can be specified on the go line This statement will append V 2 2 1 R to the default DEVEDIT argument to start version 2 2 1 R of the tool do devedrt simtlags V 2i 2 1 R Note Quotes are required where spaces used in flags or multiple flags used This loads the MASKVIEWS cutline default sec from the specified directory into DECKBUILD go athena cutline usr jdoe default sec This removes the currently loaded MASKVIEWS cutline go athena cutline none Note The cutline flag should never be used with VWF
326. enum SIAC wae We Mob Moly Silicide SILVACO International 9 97 VWF Interactive Tools Material Number Material Full Name Aliases Structure File ID TonyPlot Material Name Compatability Names 143 TSIT Green s Silicon for atlas 9 98 SILVACO International DevEdit Material Number Material Full Name Aliases Structure File ID TonyPlot Material Name Compatability Names User dll UD11 lt user defined name gt User 50 UD50 lt user defined name gt LEMENL A NN E C e EN UNEENL NN he meme LL Hec mme LL ECON ECT EN SES SSES C UNEENL A RN Lm peer LLL ECN EC EEN Lm pem EEN EIN ECO EN ECON meme EN us ETE EN Note The number symbol the equal sign the single quote and the space symbol must be quoted 9 13 31 GENERIC PARAMETER PATTERN On black and white displays pattern fills are used instead of colors There are 18 patterns numbered 0 to 17 Pattern O solid and pattern 17 empty are normally not used Each material has a default pattern which will be used by the region if no pattern is set SILVACO International 9 99 VWF Interactive Tools This page is intentionally left blank 9 100 SILVACO International Chapter 10 MaskViews 10 1 Introduction MASKVIEWS is an IC layout editor designed to interface IC layout with Silvaco s process simulator It can draw and edit IC layout store and load complete IC layouts and import export layout info
327. eo XU qe ot er a pd ea a Eoo eb vd 10 9 104 4 User Defined ODIGCIS s as adios oiai daos RUE PERO C Utd die Dare nae st das inum 10 10 Ae oo s os tuoi ee A odo obe aot ies oh Sar aic a ces vet E des 10 11 10 235 o EE 10 12 10 5 Simulator CONT Ol EE ere ae eee A 10 13 10 5 Ne OV OR FRETI 10 13 TOPO EIS EE 10 13 109S Wi LI Pd 10 13 UST 0 AES UU PTT 10 17 10 6 ae o A 10 18 10 6 1 Loading and Saving GEREENT 10 18 10 6 2 Viewing Cutline E RE Rea e C IER EEN EE 10 19 UE E ER IE IMpPOM EXON EE 10 19 SILVACO International XV VWF Interactive Tools 10 6 4 Creating GDSII Stream Format 0 0 cece III 10 21 10 6 5 Viewing OPTOLITH Image FIIO tia de am Da bote sa ruo or cce o eC etd cv ae 10 21 OTEUS erc EE 10 22 vox CUT 10 22 10 A2 le TERT 10 23 10 7 9 00H abd TP alls esate a es ed lo Eee eta Dela on erent pest 10 23 1037 EE Ee eet pari tare ae ew des Eege Rie REG EH CE aa 10 24 EE ee Ee ek 10 25 10 70 One UNG OA on E a a r O E E eE 10 25 10 7 7 Release Documentation WEE 10 25 10 8 Propere Si sisa aa ce aa 10 26 E Ae EE 10 26 10 8 2 Default Properes Ars eng bodied a arcing die xa bt aha deh qur a dundee ders 10 26 10 0 9 DISDIQV PODES do 10 27 TREIE 10 27 10 8 5 CET s i 4 tact EE 10 27 10 6 6 Pamer re TEE 10 28 108 7 o AA a a a aa a a a 10 28 10 8 37 OO PODET ics sos ina a aap prado os ce Ehe Ehe Ee EE EE 10 28 10 8 9 Notes On Monochrome Operation n nananana nananana RR 10 28 Appendix A Models ana AIGO
328. er FASTATLAS Figure 4 20 The Tools Menu 4 8 1 Starting TonyPlot Plot simulation results from DECKBUILD by choosing the Plot structure choice in the Plot pull right menu DECKBUILD allows either plotting the current structure or any specified structure The following rules are e If there is text selected highlighted anywhere on the screen DECKBUILD takes the text as the name of a file to plot DECKBUILD starts up TONYPLOT on the named file e DECKBUILD automatically determines if the selected file is 3D and starts up TONYPLOT3D if appropriate e If no text is selected and a simulator is running DECKBUILD causes the simulator to save its simulation data then starts TONYPLOT on that data This does not disrupt any lines from the input deck waiting to be executed by the simulator For CLEVER which saves a structure log file and a layout two TONYPLOTS and a MASKVIEWS are invoked Optionally choose a set file by activating the Set files choice SILVACO International 4 33 VWF Interactive Tools Note The set file is used to record a given plot s layout such as scaling zoom number and type of plots shown After a set file is created it can be used to re create the same layout when using the same or any other plot data and often useful for comparing the results of different simulation runs The Plotter Set Files popup appears Figure 4 21 This contains a scrolling list of set files in the current director
329. er File lpr Parameters Pqms ps ps 23 t Ppjet D C Runin background Figure 3 3 Applications Popup To access the Applications popup click the right mouse button and to cause the Options menu to appear Then select the Control submenu and select Applications The list box shows all of the available application names To configure an application select the desired application from the list box change one or more of the following fields and select Save Here are the following fields Label This field specifies the name that is displayed on the Applications Window e Icon This field specifies the name of the icon used to generate the displayed image Two types of icon files are needed The icon file is used to draw the black outline image of the icon and the fi11 file is used to draw the colored fill regions of the icon e File This field specifies the command to be executed when the application is selected Enter the full path name of the command if the application is not likely to be in the user s normal search path For example the PATH environment variable e Parameters This string is used to select which parameter switches are used with specific file types for each application Each parameter switch is listed inside a pair of braces and with a list of the file types to be used with that switch File types to be used with the switch are contained within angle brackets and gt and are spec
330. er is measured and the resultant curve is output to the file XjVv dat Device temperature is default 300 Kelvin If only one junction exists for the selected region you must use then a junction occurrence of one upper extract start material Silicon mat occno 1 bias 0 0 bias step 0 25 bias stop 5 0 x val 0 1 region occno 1 extract done name Junc cap vs bias curve bias ldjunc cap material Silicon mat occno 1 x val 0 1 region occno 1 junc occno 1 outfile XjV dat SILVACO International 5 25 VWF Interactive Tools Extract the minimum junction capacitance on the created Junction capacitance against bias curve The second region in the top first layer of silicon is ramped from 0 to 3V and the capacitance of the second junction occurrence lower is measured Device temperature is set for calculations to be 325 Kelvin The resultant curve 1s output to the file XjVmin dat while the extracted minimum value is logged to the default results file results final extract Start maberrale 5ilroon mat oconosl bias 0 0 brasstepes0 25 bias stop 3 0 x val 0 1 region occno 2 extract done name Junc cap vs bias min curve bias ldjunc cap material Silicon mat occno 1 x val 0 1 region occno 2 junc occno 2 temp val 325 outfile 2 XjVmin dat Note The junction occurrence is only valid for the specified region In other words there is only a maximum of two possible junctions for the specified region Junction Breakdown Curve Extract a
331. er the display of the cutplane by using any of the draw modes previously described in Table 8 6 Axes Settings allows you to reverse the x axis the y axis or swap them over SILVACO International 8 27 VWE Interactive Tools Once you ve obtained the desired plane you can export it directly to a file or TONYPLOT by using the Export Slice Dialog Press the Export button to open the Export Slice Dialog Figure 8 17 If it s going to be exported to a file enter the file name in the appropriate box TonvPlot3D Export Slice Figure 8 17 Export Slice Dialog One or several planes can be exported at once depending on the Export Slice switch To export several planes adjust the Min and Max settings These settings correspond to the start and end of the spatial position of the cutplanes The Slice Settings can be set to Auto or Step If it s set to Auto you need to choose the number of steps If it s set to Step then you need to define the step size Figure 8 18 shows five cutplanes exported to TONYPLOT with the Min set to 1 and the Max set to 1 respectively throughout the structure 8 28 SILVACO International TonyPlot3D TonyPlot V2 8 4 R File cl View cl Plot gt Tools Print Properties cl Help IW 1 1 1 04 02g p 5 91 04 02g 03 01 SILVACO International 2001 Figure 8 18 An example of five exported cutplanes SILVACO International 8 29 VWE Interactive Tools 8 5 3 Probe The Probe T
332. eractive Tools 9 Adjust the second input deck fragment 10 Resimulate the second fragment 11 Plot Check structure OK now 12 Write a Third Input Deck Fragment This is a two steps forwards one step backwards approach to the building of an input deck You can also use the built in OPTIMIZER to adjust values into line with known measured values The DECKBUILD OPTIMIZER is designed to be used in the same environment and is designed to be used as a step by step calibration tool Once an input deck is complete you can re run it with look see variations or load it into the VWF database where automated DOE split lots and RSM model generation may be performed 1 2 2 TonyPlot The Visualization Tool provides comprehensive interactive scientific visualization capabilities All of the usual ways of displaying scientific data are supported These include xy plots with linear and logarithmic axes surface and contour plots Smith charts and polar plots Virtually every characteristic of the plots including the text and position of labels can be specified Full hardcopy capabilities are also supported TONYPLOT includes animation features that permits viewing a sequence of plots in a manner showing solutions as a function of some parameter The parameter can be varied under slider control or frames can be looped continuously a feature helpful in developing physical insight TONYPLOT supports production of hard copy plots on a wide range
333. erform the same function This consistency allows for more efficient use of the popups as familiarity with the standard controls is gained Apply Reset Dismiss BS Figure 7 1 Standard Controls The following standard controls are available e Apply Almost all popups have an Apply button This button stores the current settings on the popup and usually causes a plot to be updated Click on this button when satisfied with the items on the popup e Reset Many popups also have a Reset button This button restores the settings on a popup to the state they were in when they first appeared or when the Apply button was last clicked on whichever was most recent In other words it sets the popup back to represent the information currently held inside the program Use this button after modifying popup items and then deciding to return them to their previous state However if Apply has been clicked on Reset will not work e Dismiss To remove the popup from the screen click on Dismiss None of the changes made to the popup will be applied Use this button when the popup is no longer needed and no further changes are required 1 2 SILVACO International TonyPlot e Save as Defaults This button appears as an icon showing data flow from a popup to a disk Clicking on Save as defaults causes the current settings on the popup to first be applied as if Apply were clicked on and then be saved to a defaults file For more information on defa
334. erial polysilicon y val 3 mat occno 2 2D Material Region Boundary Extracting the minimum X boundary left side location of the photoresist material region at XY coordinates 7 6 1 2 extract name minx min bound x pos material photoresist x val 7 6 y val 1 2 Extracting the maximum Y boundary upper side location of the photoresist material region at XY coordinates 5 2 0 extract name maxy max bound y pos material photoresist x val 5 2 y val 0 2D Concentration Area Integrates the Boron concentration within the specified box limits using a cutline step of 0 05 microns extract name limit area 2d area impurity Boron x step 0 05 x min 0 01 y min 0 23 x max 0 6 y max 0 45 In addition to this statement you can add the interpolate flag When present this flag causes the extraction to perform interpolation at the edges of the specified bounding box for min max concentration and position Integrates the Phosphorus concentration for the whole 2D structure using a cutline step of 0 03 microns extract name 2 device area 2d area impurity Phosphorus x step 0 03 Note The x step refers to the number of 1d cutlines used to obtain the 2d area For a device with an X axis of 7 microns an x step of 1 would result in 8 cutlines being used at 1 micron intervals 2D Maximum Concentration File Creates a Data format file plotting the position of the maximum potential in silicon material only for the whole 2D struct
335. ernational DeckBuild Note Redirection of the system command output Le system 1s in gt file out cannot be achieved as the output is already redirected by DECKBUILD 4 16 16 TONYPLOT Plots a file Syntax tonyplot args Description This statement causes DECKBUILD to save a temporary file from the current simulator and start up TONYPLOT with that file loaded The temporary file is removed when TONYPLOT exits args if specified are passed directly to TONYPLOT as if invoked from the command line If any of st da or over and a file name is specified DECKBUILD uses the named file instead of saving and plotting the current structure DECKBUILD also detects if the structure to be plotted is 3D and use TONYPLOTS3D if required Examples This statement saves the current file and starts TONYPLOT tonyplot This statement plots a file which should be in the current directory tonyplot st well str See Section 4 5 Main Control SILVACO International 4 75 VWF Interactive Tools 4 17 Environment Variables S EXAMPLES specifies the location of the Silvaco standard examples and overrides the default setting simulator ARG overrides the default simulator arguments set in the Simulator Properties popups The variable below would setup DECKBUILD to start version 1 0 0 A of ATHENA by default setenv ATHENA ARG athena V 1 0 0 A lt simulator gt _HOST overrides the default simulator host setting in the Simulator
336. ernational 1 1 VWF Interactive Tools VWF Interactive Tools TonyPlot Interactive Graphics Scientific Visualization Animation Hardcopy o je MaskViews IC Layout Editor VWF Automation Tools DeckBuild DevEdit Material Editor Doping Editor Tool Invocation Mesh Editor Interactive Runtime Control Automatic Simulator Interfacing SPDB Process Data Base GUI Driven Input Deck Interfacing GUI Tool Control Core Tools SSUPREM3 ATHENA ATLAS Figure 1 1 Virtual Wafer Fab VSF Framework SILVACO International Introduction 1 2 Interactive Tools The VWF INTERACTIVE TOOLS provides a versatile environment for using Semiconductor Technology CAD TCAD tools It does this in two ways First making it easier to use process and device simulators Second automating simulation tasks associated with developing new technologies Tasks that must be performed by all physically based process and device simulators are readily identified For example structure specification meshing and data visualization are common to all simulators Major benefits are obtained by implementing these common functions as specialized tools that are accessed as required by individual simulators You benefit from the resulting consistency in the way tasks are performed which makes it much easier to learn and use simulators In addition new simulators can be developed more rapidly and are smaller The VWF INTERACTIVE
337. error of 2 5 to achieve convergence Note The error percentage shown on the Targets worksheet is the actual error percentage before weighting SILVACO International 6 19 VWF Interactive Tools 6 5 Setup 6 5 1 Overview The Setup worksheet controls a number of constants used by the OPTIMIZER such as the maximum number of iterations and evaluations and several different convergence criteria The default values are almost always adequate The Setup worksheet is displayed by setting Mode to Setup Figure 6 22 iy Deckbuild Optimizer optexD2 in o pt edited Marquardt parameter Marquardt scaling Function evaluations Jacobian evaluations Gradient norm sum of squares difference F C difference RMS error 95 Average error 95 Maximum error 595 Iterations Terminatian cade Figure 6 22 Setup Worksheet The most important setup criteria are as follows e Maximum error Determines the maximum allowable error for any target to achieve convergence e Iterations Determines how many total Marquardt iterations the optimizer is allowed to perform This value counts only the Marquardt iterations each consists of one or several sub iterations The actual number of simulation calculations is always greater than this value The default value of Maximum error and Iterations is 5 0 and 4 respectively 6 5 2 Editing Setup Values To edit a setup cell value 1 Position the pointer over the cell The cell then appear
338. ertain values without deleting them from the worksheet To disable a parameter 1 Position the pointer anywhere on the row to be disabled and double click the SELECT mouse button to select that row The row is selected 2 Choose Toggle from the Edit pull down menu The selected row is grayed out on the worksheet and its values are frozen 6 10 SILVACO International DeckBuild Optimizer To enable a disabled parameter follow the same procedure starting with a disabled row Note During the optimization run the OPTIMIZER uses whatever entered optimized value for disabled parameters If no optimized value exists the initial value is used 6 3 8 Folding Columns The OPTIMIZER allows folding or hiding any column or columns on the worksheet This can be useful when several columns on opposite sides of the worksheet need to be seen simultaneously without having to scroll horizontally back and forth To fold a worksheet column 1 Choose Control from the View pulldown menu and the Parameter control popup shown in Figure 6 12 appears y Parameter control Mode v enable Parameter columns Line number Parameter name Response type Optimized value Initial value co El H Figure 6 12 Parameter Control Popup Enable Mode 2 Change Mode to enable on this popup 3 Click SELECT on any columns in the scrolling list that you want to fold Columns that remain selected on the scrolling list are shown the others a
339. es 1 Pull down the Category menu 2 Select Disk Files 3 Select Load To use Drag amp Drop 1 Pull down the Category menu and select Drag amp Drop 2 Press SELECT on the icon in the upper left corner of the preview cutline popup 2D masks from 2 2 11 6 to 7 8 10 9 then drag 1t to the MaskViews Cut Files popup window and release 9 Click on the icon to frame it and click on Load The filename default sec xx has been loaded where xx is an incremental number depending upon the number of cross section cutline files in the current working directory To load this cutline file into DECKBUILD 1 From DeckBuild s main window open the Tools menu 2 Select MaskViews 3 Select Cut files and specify a file name SILVACO International 10 3 VWF Interactive Tools 10 2 2 Using MaskViews Inside The VWF When used within the VIRTUAL WAFER FAB VWF AUTOMATION TOOLS environment some of the operations of MASKVIEWS are made slightly different To start MASKVIEWS double click on one of the layout mask items in the Masks directory in the VIRTUAL WAFER FAB library section Layout entries are created using the Create option while displaying the Masks directory A layout entry must be present to start MASKVIEWS even though it may be empty You can copy a layout entry by starting MASKVIEWS on the destination layout item then dragging and dropping the source item to the MASKVIEWS layout window A warning is displayed if any mask elemen
340. es can be Poly Aluminum SiO2 etc See Generic Parameters Material for a more complete list UNDER GATE This is currently the same as under mat poly It may become more intelligent about finding the gate in future releases DEPTH lt N amp gt How deep in Microns the rectangle should be from the surface of the semiconductor region This parameter must be used in conjunction with under region under material or under gate DEFAULT Before setting specified values reset all values in the specified region material type or global constraints to their default values MAXIMUM ANGLE lt n gt MAX ANGLE Maximum angle a triangle can contain Max angle has a range between 90 and 180 degrees Normally points are limited by mesh build to 12 connections If the maximum angle is set to 180 the connections limit is removed In no case will an angle actually be 180 degrees SILVACO International 9 63 VWF Interactive Tools MAXIMUM RATIO lt n gt MAX RATIO Maximum ratio of a triangles height to its width MAXIMUM HEIGHT lt n gt MAX H Maximum height of a triangle in microns MAXIMUM WIDTH lt n gt MAX W Maximum width of a triangle in microns MINIMUM HEIGHT lt n gt MIN H Triangles shorter than this are not shortened during impurity refinement MINIMUM WIDTH lt n gt MIN W Triangle narrower than this are not narrowed during impurity refinement EXAMPLES allow all regions to have slightly obtuse triangle
341. es defaults saving routines on its property popups Default Simulator At startup DECKBUILD creates popups for the chosen default simulator and starts the default simulator in the tty subwindow if you enable the tty subwindow DECKBUILD determines the default simulator according to the following rules 1 The simulator specified on the command line if any takes precedence over all other rules 2 If no simulator was specified on the command line DECKBUILD uses the last saved default simulator The default simulator is saved by clicking the Save as Defaults button on the Control Pad 3 If no default simulator has been saved DECKBUILD uses ATHENA Note DeckBuild automatically changes simulators whenever it encounters an autointerface statement in the input deck see Autointerface on page 4 2 Command line specification of the default simulator is important in the batch mode if there is no initial autointer face statement in the input deck SILVACO International 4 13 VWF Interactive Tools 4 4 DeckBuild Controls DECKBUILD consists of a window Figure 4 7 containing two subwindows the text subwindow in the upper half of the base frame and the tty subwindow 1n the lower half The text subwindow 1s used to build and edit input decks while the tty subwindow 1s used to run the simulation You can also display a messages subwindow below the tty subwindow Deckbuild V3 3 NONE dir tmp mnt Zwriter Zhankm 7 v co Tue
342. es the one dimensional threshold voltage of a MOS cross section using the built in QUICKMOS 1D device simulator The gate voltage range defaults between 0 to 5 Volts but can be specified as required The substrate can also be fixed at any bias Qss and device temperature values may also be specified e QUICKMOS CV curve creates a CV curve of a MOS cross section using QUICKMOS This shows capacitance as a function of either gate voltage or substrate voltage with the other terminal held at any fixed bias Qss and device temperature values may also be specified e QUICKBIP 1D solver measures any of 22 BJT Gummel Poon parameters plus any forward or reverse IV curve See the Section 5 9 QUICKBIP Bipolar Extract for more information and examples e Junction capacitance versus bias calculates the junction capacitance of a specified p n junction within any region as a function of applied bias to that region Qss and device temperature values can also be specified 5 2 SILVACO International DeckBuild Extract e Junction breakdown curve calculates the electron or hole ionization integral of any region as a function of applied bias to that region This calculation uses the Selberherr impact ionization model see Impact command section and Impact Ionization physics section within the ATLAS manual You can modify the Selberherr model default values and specify Qss and device temperature values e SIMS profile calculates the concentration profile o
343. es vary depending on your installation Y Deckbuild v3 5 3 Beta NONE dir u jdoe work File gt View T Edit Find ci Main Control Commands cl Tools v l1 next line stop cl cont run quit Line 1 paste init pause clear restart kill Stop None Wed May 17 14 26 02 1995 Executing on host elvis um y starting ATHENA ATHENS Y Figure 2 1 DeckBuild Main Window The DECKBUILD application window contains e An upper text edit region that will hold simulator input commands e A lower tty scrolling teletype region that will display run time output from the simulators A set of file control buttons located at the top of the text edit region e A set of simulator control buttons located between the text edit region and the tty region The name of the simulator that 1s currently running under the control of DECKBUILD 1s displayed at the lower right hand corner in the footer bar of the DECKBUILD application window Status messages appear in the lower left hand corner of the footer bar When DECKBUILD loads ATHENA starts by default You can change this default for a particular session by specifying a different simulator as a parameter of the deckbuild command You can also change the local default by specifying a different simulator in the Main Control window of DECKBUILD and then saving this as the default CHAPTER 4 DECKBUILD discusses DECKBUILD thoroughly SILVA
344. esult Modeled result Error delta and Predicted value Experimental result This 1s the measured value which can be set from information provided by the RSM as it is passed from the VWF or which can modified or added later using the text field underneath the scrolling list e Modeled result As previously mentioned the experimental result is measured when all inputs are set to their nominal values The modeled result shows the value that is calculated by the RSM SILVACO International 7 91 VWF Interactive Tools and is a measure of the accuracy of the model It also used to make a first order error correction of the model Error delta The error delta 1s the difference between the experimental measured value and the modeled value when all inputs are nominal The smaller this error the more accurate the model This delta is used to error correct the model Predicted value This shows the modeled result after error correction has been applied It 1s the same as the experimental results to show that after error correction the model is more accurate when the inputs are nominal To change the experimental result for any output select the appropriate row from the list enter the new value in to the text field provided and press the Return key Once all new values have been made click on the Apply button to commit the changes Uses A measured result for an output parameter allows ToNYPLOT to make a simple error co
345. et is required to be constant This 1s where the bias command can be used mask name poly bias 0 15 In other words 1 2 microns 0 9 microns 0 3 microns 2 0 15 microns or 0 15 microns per edge Further experimentation might be required in addition to the fixed bias This 1s where the delta command can be used In this example mask name poly bias 0 15 bias 0 15 delta 0 025 This simulates a true experiment in terms of CD variation The misalign command is used to offset a layer with respect to other layers For example mask name poly bias 0 15 misalign 0 1 causes the poly layer to be offset to the left by 0 1 microns The shrink command is used to reduce the size of all edges in the specified layer For example the statement below will reduce the layer edges by 50 percent mask name poly shrink 0 5 Misalignment and CD Experimentation It is often necessary to experiment with either misalignment or the CDs of a layer The MASKVIEWS DECKBUILD interface supports this level of experimentation DECKBUILD can be used to experiment with the cutline generated by MASKVIEWS Each mask statement can be used to alter the cutline The underlying mesh used by ATHENA is not changed with mask experimentation commands VWF can be used to split on these values to generate RSM s relating to mask experimentation 4 16 11 MASKVIEWS Plots a layout file Syntax maskviews layout file Description This statement starts the MASKVIEWS la
346. et of DevEdit instructions can be read Additionally running DevEdit in batch mode requires the command file Structure File By right clicking on File select Save as and a pop up menu is displayed By convention Silvaco structure files end with the extension str Choose a name and use this extension for instance examplel str then press the Save Structure button The file can now be used in ATLAS and TONYPLOT SILVACO International 9 17 VWE Interactive Tools Command File In a similar manner select Save as and enter a name ending with the extension de for DEVEDIT It is good practice to use the same filename as the structure file but ending with the conventional de extension hence examplel de for this case Figure 9 12 File Save Menu Batch Mode It is also possible to run DEVEDIT in batch mode within DECKBUILD without using the graphics user interface GUI mode used above Although a user could directly input the command statements to create a structure and mesh this method is more difficult than using DEVEDIT in GUI mode However once the command file has been saved it can be easily loaded edited and run in batch mode within DECKBUILD Start DECKBUILD with deckbuild amp then left click on File Open and select a DEVEDIT command file examplel de This command file can be run inside DECKBUILD with minor modifications 1 The first line of the DEVEDIT is similar to DevEdit version 2 4 0 Rin which i
347. eters specific to this method can be customised as required To access the parameters choose ASA Setup from the Define menu found on the Production popup A popup appears allowing customization of these parameters default values shown in parentheses e Limit acceptances 10000 e Limit generated 99999 e Cost precision 5 e Maximum cost repeat 1 e Number cost samples 5 e Cost parameter scale 1 e Temperature anneal scale 100 e Testing frequency modulus 5 When all changes have been made click on the Apply button to store them Click on Reset to set the values back to their previous settings For a complete description of ASA its terms and how it is used see the ASA manual ASA code is made available under terms of the GNU general public license for libraries See the file SSILVACO etc GNU for details about this license SILVACO International 7 93 VWF Interactive Tools This page is intentionally left blank 7 94 SILVACO International Chapter 8 TonyPlot3D 8 1 Overview TONYPLOTSD is a 3D graphics viewer capable of displaying data generated from 3D process and device simulators It also allows you to control labeling lighting shading and other plot aspects This chapter will explain its applications assuming TONYPLOT3D is properly installed More detailed information on installing TONYPLOT3D and proper operation on each platform can be found in the Section 8 7 Operating Platforms Figure 8 1 sh
348. example an oxide region can completely surround a polysilicon region thereby having two polygons an outer edge and an inner edge Normally this would be done by first adding the oxide as one polygon Using the Etch then Add mode the polysilicon region can be added to change the oxide region in the process You can add a second polygon after the first polygon has been completed by selecting New Polygon or by clicking on the left button at the starting location for this new polygon Use the New Polygon option if you wish to start the new polygon near an existing point or line Otherwise it is considered a modification operation and does NOT start a new polygon Alternatively a region may contain no area but only describe an interface line This is sometimes used for electrodes to limit the mesh size or show a contact beginning at a simulation limit To draw this type of region before adding any points select New Line instead of New Polygon A polygon can also be created be selecting New Circle Arc This forms a regular polygon or a piece of a regular polygon after selecting various parameters These parameters include the center of the polygon circle a radius a start and ending angle and the number of faces angle between points 9 7 2 Setting Base Impurity A region can be made of a material with a constant base doping This property can be defined by selecting Set Base Impurities this completes any shape editing currently being perf
349. execute UNIX system commands within a simulation deck To use a system command the line must start with the command system as shown below System rm history str To enable system commands for VWF AUTOMATION TOOLS set the environment variable DB_SYSTEM_OPTION to any value Nominal Variables if enabled allows you to use the nominal flag for DECKBUILD set variables If you specify the nominal flag in a set statement the variable remains unchanged if already in exsitence The variable will be created as specified if it is new See Section 4 16 12 SET for more details on the set command Default Load Filter sets the default file filter for DECKBUILD s file loader popup 4 24 SILVACO International DeckBuild Remote options are used to perform remote simulation These options are explained in Section 4 15 Remote Simulation Simulator nice value sets the priority of the simulator process Negative nice values give the simulator process more CPU time relative to other processes Positive nice values give it less Only the super user can use negative values The value is used only when the simulator is started and does not change the nice value of the simulator once it is running You must then quit and restart the simulator to give it a new nice value The default value is 10 added To set the simulator nice value for VWF AUTOMATION TOOLS set the environment variable NICE_ARG to the required number iy Monitor String List
350. f a dopant in a material layer e SRP profile calculates the SRP Spreading Resistance Profile in a silicon layer e Sheet resistance and sheet conductance calculates the sheet resistance or conductance of any p n region in any layer in an arbitrary structure You can specify the bias of any region in any layer the Qss of any material interface and the device temperature A flag for carrier freezeout calculations can also be set see Incomplete Ionization Of Impurities physics section within the ATLAS manual e Sheet resistance and sheet conductance versus bias calculates the sheet resistance or conductance of one or more regions as a function of applied bias to any region Qss and device temperature values can also be specified e Electrical concentration profiles measures electrical distributions versus depth You can also specify the bias of any region in any layer and the Qss of any material interface The device temperature can also be set to the required value The following distributions are calculated e electrons holes e electron quasi fermi level hole quasi fermi level e intrinsic concentration e potential electron mobility hole mobility e electric field e conductivity e ID maximum minimum concentration measures the peak or minimum concentration of any dopant or net dopant for a specified 1D cutline in the nth occurrence of any material or all materials and also within any junction defined e 2D maximum m
351. f automatically transferring simulation data between different simulators Simulation of a device may proceed transparently from SSUPREM3 1D process through ATHENA 2D process and finally to ATLAS 2D device The thread of control can be transferred to any simulator under DECKBUILD including DEVEDIT for interactive mesh adaptation Auto Interfacing enhances the power of simulation by allowing concentration on which simulator 1s best for the job rather than on how to get one simulator to talk to another Silvaco standards of simulator commonality 1s based on products that use a common data format 4 10 2 Scenario A typical simulation flow 1s shown in Figure 4 27 sa P ATHENA P ATHENA PROCESS SIMULATION SEQUENCE ATHENA ATHENA ATHENA DEVICE AT AT AT AT AT AT SIMULATION S TESTS Figure 4 27 The History Popup The 2D simulation starts with a 1D process simulator SSUPREMS3 since the initial processing of the device is entirely planar For example the initial well processing of a MOS device can be considered in 1D until the gate poly is etched At the point when 2D is first required an auto interface statement 1s placed in the deck followed by 2D mesh definition and mesh initialization commands At run time DECKBUILD automatically transfers the 1D data from SSUPREMS onto the 2D ATHENA mesh Alternately the auto mode of ATHENA can be used This mode automatically performs a 1
352. f the instructions used by DEVEDIT to create the mesh and the structure if it was made in DEVEDIT as in Example 1 If you want to make additional changes at a later time you need to save a command file so that the original set of DEVEDIT instructions can be read Additionally running DEVEDIT in batch mode requires the command file Structure File By right clicking on File select Save as and a pop up menu is displayed By convention Silvaco structure files end with the extension str Choose a name and use this extension for instance example2 str then click on the Save Structure button The file can now be used in ATLAS and TONYPLOT Command File In a similar manner select Save as and enter a name ending with the extension de for DEVEDIT It is good practice to use the same filename as the structure file but ending with the conventional de extension hence example2 de for this case E nnn nnn EE eil SA GE eee IE GE EEN EE RER T DT AN Ge EE THEHI HH HAHAHHA Hrer He Te HERR ean ann Hee k 1 pude ee e E E SCH Hm jn ate EE H Um EE o ab E 8 EHE i sch El AT IB Hi oen m 1 puc arar UE E41 d EEN Epis St 1 Bo nn em SE EE SE EE SE EE Ze d Eje pH TE Jun E xum p 41 Eje EA EEGEN GES nn i uuum fee p B n E E SE ius d SE PRERA BEL RN T r H noon Hr El dee Ge ehh Ab e E pies J D ss EE d E IA nas H prin ur 1 Icons
353. field centered at the mouse click position Once serifs are placed their size cannot be changed The serif size set here 1s also used as the size for serifs when added using the Add serifs edit menu option see Section 10 4 5 Polygon Editing 10 4 4 User Defined Objects User defined objects allow any polygonal shape to be drawn on the current layer by specifying the path in terms of distances and angles The shape is then drawn by selecting the first Vertex point of the shape on the main layout window User defined objects are created by selecting the Create button on the Objects popup This is then appended an object titled new to the end of the objects list Once you select the object as the current object type you can enter a more descriptive name for the object in the Title field of the popup Sides of the shape are described in terms of angles and lengths which are listed 1n the scrolling list on the Objects popup The angle value specifies a rotation to the path direction to be applied before drawing the side The initial angle is vertically upwards on the screen and angle values are in degrees clockwise For example the length and angle pairs 1 0 1 90 1 90 and 1 90 define a unit square which could be used to define contact holes on the layout The length of each side is determined by the side length parameter multiplied by the object dimension parameter Therefore you can create similar polygons of different sizes by changing th
354. file If it not the last argument however the argument that follows it is taken as the name of the file to be created If no printer option is used TONYPLOT assumes a monochrome Postscript printer and 300 DPI If something other than this is required the printer argument can be given with the name of the printer to use as defined with the Printer Editor discussed previously If no form option is used a default Letter size portrait form is used If another form is required use the form argument with the name of the desired form as defined from the Form Editor 7 17 5 Queues and Printers When TONYPLOT creates a hardcopy it converts the plot shown on the screen into a text file which can be sent to a printer for printing Each type of printer accepts different types of files and so TONYPLOT needs to know the printer being used Printers read these files from an area known as a queue and TONYPLOT puts the files it creates into this queue Each different printer reads from a different queue Therefore you must tell ToNYPLoT which queue the printer is using Attaching printers to queues is a task performed only upon installation of the printer and if you have any questions about available printers and queues or need to find out which printer is attached to which queue you should contact your system administrator 7 17 6 System Configuration The method your system uses to configure the various printer queues is independent of
355. file no_exec type ssf outfile example out sweep parameter length type linear range 1 2 2 parameter width type linear range 1 3 3 the data in example out would be 011 A U N e N wW w N N SILVACO International B 10 DBInternal The first column is the ordinal of the trial The second column is the length value of that trial e g 1 or 2 The third column is the width value of that trial e g 1 2 or 3 B 5 6 option Syntax OPEO E Meme ppt eser bt plos Description The option command controls some of the command line options passed to DECKBUILD when running a trial The value of a parameter int ascii or plot is either true or false If the parameter is present it is set to true If it is negated with the it is set to false If it is absent it is set to a default value The default for int is true The default for both ascii and plot is false A trial is run with the command deckbuida sinti pasci noplot erum lt in iles outrtrbe rntrle out The int option tells DECKBUILD to start DBINTERNAL as the default simulator The ascii option tells DECKBUILD not to start its GUI The noplot option tells DECKBUILD to ignore any TONYPLOT commands in infile The int option will be passed if int is true and will be absent if int is false The ascii option will be passed if ascii is true and will be absent if ascii is false The noplot option will be passed if plot is false and will be absent if plot is
356. for marking the X axis on cutline profiles By default the X coordinate is relative to the start of the line and so measures distance along the line If Absolute is chosen the axis shows the X coordinate of the original mesh if the cutline is horizontal or the Y coordinate if the cutline is vertical Cutlines that are neither horizontal or vertical show a Relative X axis If Interface is chosen the X axis is centered around the first material interface in the cross section i e the first interface is at X 0 If no interface exists a Relative X axis is drawn e Probe impurities This controls how impurity values reported by the Probe tool are shown By default true linear scale values are shown Select Log of value to see the values on a log scale e Probe refresh Switch probe refresh on to remove old probe targets from the plot area e Ruler readout When this is turned on the position of the pointer is displayed in the frame footer whenever the rules is being used SILVACO International 7 59 VWE Interactive Tools 7 19 5 Overlays Tonyplot Properties Figure 7 38 Overlays Settings e Creating When overlays are created the plots from which it is comprised can either be left in place choose Leaves Originals or deleted when the overlay has been drawn choose Deletes Originals If the originals were deleted they can be retrieved later by splitting the overlay If they were not deleted splitting the overlay d
357. formulae can be abruptly stopped in any of the six directions up down left right forward and backward by using the rolloff mode The rolloff mode specifies whether a roll off function is used or where exactly the impurity 1s dropped to zero See the Impurity chapter for a more detailed description Parameters Z Parameters are only valid in 3D Mode ID lt n gt is the identifier of which impurity implant should be added replaced or deleted If no id is given the first unused id will be added Note There is a list of id s for all regions and a separate list for each region i e there can be an impurity 1 for all regions an impurity 1 for region 5 and an impurity 1 for region 7 which make up three different impurities DELETE Deletes the impurity implant identified by id REGION ID lt n gt is the region number which uniquely identifies the region reg id to which region this impurity applies If no region id parameter is given the normal case it applies to all regions REGION ID lt c gt REG ID Identifies the region with name lt c gt to which this impurity applies If two regions have name lt c gt the region with the lowest region number will be replaced or deleted REGION NAME lt c gt REG NAME Identifies the region with name c to which this impurity applies If multiple regions have name lt c gt all matched regions are changed IMPURITY lt c gt Specifies what impurity this profile is desc
358. g a Gate Electrode In a similar manner add a source contact at 0 0 0 0 01 1 0 01 and 1 0 Add a drain contact at 3 5 0 3 5 0 01 4 5 0 01 and 4 5 0 Much of the geometry of the device is now complete The last step is to add impurities Defining Impurities Adding Impurities If an impurity concentration is constant through a region the preferred manner to define the dopant is in the Region definition as discussed above For a non uniform impurity including impurities that are in more than one region then the impurity should be separately defined as described below Under Impurities select Add impurity the menu for impurities becomes available Next to Impurity select Donors For Start X and v values use 0 0 and 1 0 08 Note that only two points are selected not four and the opposite corners of a rectangle should be selected A one dimensional line is acceptable it 1s considered a flat rectangle This region 1s the impurity source region and the impurity concentration is the peak concentration uniformly throughout the region Set the Peak Concentration to 5e 21 and the Reference Value to 1e 20 The Reference Value is used as a scaling factor in the Roll Off Functions see Section 9 12 ROLL OFF FUNCTION SILVACO International 9 13 VWE Interactive Tools The Roll Off functions calculate the vertical and horizontal roll off from the source impurity region the peak concentration as
359. g opposed on that area The types of effected areas are described in the next few paragraphs and the types of constraints that can be applied Constraint areas are either region based or rectangle based Region based constraint areas are set up in a hierarchy where the most specific constraint area overrides the less specific areas that apply Rectangle areas as you may have guessed are rectangles They are specified by absolute coordinate or in relationship to regions as under metal regions When two rectangles overlap the constraint applied to the overlapping area is the most restrictive constraint When region constrains and rectangle constraints overlap the most restrictive constraint is also used In region based constraints each region has is own set of mesh constraints If a specific constraint is not set for a region the value from the mesh constraint specified for that region s material type is used If it is not set the value from the All Regions mesh constraint is used This allows setting constraints for all regions a specific material type or a specific region The scope list allows specification of which set of mesh constraints are being set The check box to the left of each value must be turned on if the value is to be changed For All Regions the check boxes are always set because those values are the default values for all other scopes For material type scopes De Semiconductor Regions Insulator Regions and Metal Region
360. ge at electrode i electrode y curren at elect rode c electrodel electrode2 capacitance between electrodel and electrode2 g electrodel celsoLrode2 conductance between electrodel and electrode Vitis Ke Leer rode Internal voltage at electrode time transient time temperature temp device temperature frequency freq r Trsegqueneyv beam beam no I Wight Intensity Lor speocrfled beam 7 SILVACO International 5 15 VWF Interactive Tools 5 16 s imaginary lt Mode gt s real lt Mode gt h imaginary lt Mode gt h real cModes ie elecoctrode q electrode ide selectrodes lreal electrodes iimag electrode ltn celecrtrode rhe electrode lhh eslectrode wfd electrode rl lt electrode gt cl lt electrode gt 11 lt electrode gt VOOCLb HOde sorrcurt nogde gt lcot modes lt crkreuit nodes rhoe lt layer gt rhoh lt layer gt rho lt layer gt vlayer lt layer gt sm mode pm lt mode gt gm lt mode gt VeCtEsreal lt CcircuLe node VOOLD Imag sorfcust node gt code imaginary component of specified S X Teal Component of speci tied Ss code y code imaginary component of specified H L veal component of specified EH code Je E
361. generation statements for ATHENA Definition of the grid control parameters is done using the grid control popup Figures 10 7 and 10 8 displayed by selecting Define Grid x and y The Horizontal grid popup shows the grid definition parameters for the current edit layer and a list of all layers in the layout Layers must be enabled in the list if they are to have any effect on the grid e Maskviews Vertical grid control Distance 0 00 Space 0 02 Distance 0 10 Space 0 05 Distance 0 50 Space 0 03 Distance 1 00 Space 0 50 Distance 0 00 0 00 10 00 Spacing 0 02 0 00 4 00 Figure 10 7 Vertical Grid Control Popup y Maskviews ATHENA grid control Current layer MET second metal def Offset from point 0 00 Valid layers CJ Spacing at edge 0 05 Grid inside edge Distance 0 20 Spacing 010 Grid outside edge Distance 0 20 Spacing 0 10 Remember Recall Dismiss Figure 10 8 Horizontal Grid Control Popup The Remember and Recall buttons on the X grid definition popup allows the grid spacing parameters for single layers to be remembered and recalled for later use Clicking on the Remember button stores the currently displayed settings of spacing parameters to memory Clicking on Recall restores values to the popup from memory These can be used when temporarily changing values to observe the effect of spacing or to copy spacing values from one layer to another Grid definition in ATHENA consists of a
362. gies diffusion times and temperatures and mask layout variations Taking CMOS technologies as a specific example the responses of interest include threshold voltages subthreshold slopes transconductances leakage currents and breakdown voltages This procedure is simple in principle but difficult in practice There are numerous input variables and output responses A lot of effort is required to establish the relationships between process parameters and electrical characteristics It 1s also not easy to define figures of merit associated with optimum responses The relationships between inputs and responses are usually investigated by running split lots in a wafer fab and measuring the electrical characteristics of special test structures This is expensive and time consuming even when modern techniques are used to design experiments and analyze the results The costs are escalating rapidly as wafer sizes increase and processing equipment becomes more expensive Using physically based process and device simulation may be quicker and cheaper But to use simulators engineers have had to acquire specialized simulation related knowledge Even when simulation skills have been acquired performing significant studies that require many runs has been time consuming and inconvenient You had to design the study generate all the input decks required submit all the runs store all the results and only then analyze the results The VWF AUTOMATION TOOLS elim
363. ging this color may improve the contrast e Grid The color of the axis grid SILVACO International 7 61 VWE Interactive Tools T 7 62 19 7 Structure Colors Structure colors are colors of items related to specific data items Each is specified independently and set to any color that TONYPLOT supports e Mesh The color of the simulation mesh on 2D Mesh plots and Cross Section plots e Edges The color of edges on 2D Mesh plots and Cross Section plots e Cutlines The color of cutline positions on 2D Mesh plots Note that the color specified here may not be the color observed if the color on which the line appears is not the actual Background color This is due to the graphics operation used If distinguishing the cutline position line from the color on which it is drawn is difficult changing this color may improve the contrast Depletions The color of Depletion Edges on 2D Mesh plots e Junctions The color of Junction on 2D Mesh plots e Electrodes Color of hatching used to indicate electrodes on 2D Mesh plots e Outlines The color of contour outlines SILVACO International TonyPlot 7 19 8 Sequence Colors TONYPLOT uses sequence colors whenever a group of items are plotted and each needs its own color Examples are lines on Graph and Cross Section plots regions levels and so on The colors used are defined by the list of sequence colors indicated on this popup If the first color i
364. gion specific commands The list contains all regions by name number legend and for color terminals color User Added Impurities List Displays a list of the user added impurities as they are selected from the Control panel Impurities menu or read from a command file impurities read from Silvaco standard structure files do not appear in this list This list also allows impurities to be selected for impurity specific commands el DevEdit 2 3 2 4 no active file name File gt Regions 71 Impurities ci Mesh gt Help 7 Highlight Show Mesh Black amp w hite Border Border Points Grid Fill Regions Off Pattern Solid Show Net Doping Off Contour Legend Off Impurity Junctions Scale Top Right Bottom Left Number of Points Number of Triangles Zoom toregion Full View User Added Impurities LAN PT i Copyright i 1996 sILVACO International Inc H Figure 9 1 Base Window Display SILVACO International 9 3 VWF Interactive Tools 9 2 2 Control Panel Commands are performed by selecting the appropriate option from one of the menus or buttons displayed on the control panel as follows e Files Contains a menu of load save file operations e Regions contains a menu of various material region control options Impurities Contains various options for control of impurities e Mesh Contains a menu of various mesh control options e Help Provides interacti
365. gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt X anl lt EXPR gt an2 lt EXPR gt bnl2 EXPR bn2 lt EXPR gt Y ap1 lt EXPR gt ap2 lt EXPR gt bp1 lt EXPR gt bp2 lt EXPR gt A betan lt EXPR gt betap lt EXPR gt egran lt EXPR gt X xmin lt EXPR gt xmax lt EXPR gt 1 Detault value i pion anl 2 03e5 an2 7 03e5 bnl 1 231e6 bn2 1 231e6 SILVACO International 5 13 VWF Interactive Tools apl 6 7le5 ap2 1 582e6 bp1 1 693e6 bp2 2 036e6 betan 1 0 betap 1 0 egran 4e5 See Appendix A5 Threshold Voltage Calculation GE lt EXTRACT_MULTIPLE_LINE_SETUP_3 gt lt EXTRACT_MULTIPLE_LINE_SETUP_A gt lt EXTRACT_MULTIPLE_LINE_SETUP_B gt EXTRACT MULTIPLE LINE DONE 3 CURVE FUNC CURVE MULTIPLE LINE 3 outfile lt QSTRING gt CURVE MULTIPLE LINE 3 gt curve AXIS FUNC bias X AXIS FUNC ldsheet res ldp sheet res ldn sheet res Ldcondauct bap Conduer dn conduct x material silicon polysilicon region occno lt EXPR gt mat occno EXPR y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt workfunc lt EXPR gt soi semi poly incomplete temp val lt EXPR gt X E xmin EXPR xmax lt EXPR gt H EXTRACT MULTIPLE LINE SETUP 4 EXTRACT MULTIPLE LINE SETUP A EXTRACT MULTIPLE LINE SETUP B gt EXTRACT MULTIPLE LINE DONE 4 CURVE FUNC
366. h Must use stretch value or y length with this parameter Examples cause the device to be stretched at the center of first polysilicon region so that the new length of that region will be 1 5 microns in the x direction stretch length 1 5 Cause the device to be svcrevcoched at the center ot First polysilicon region so that the new length of that region T will be an extra 1 5 mrorons rin the x direction stretch stretch value 1 5 Cause the device to be stretched at the center of first t polysilicon region so that the new length of that region To Wiki be 125b microns un The x direction stretch material polysilicon length 1 5 cause the device to be stretched at the center of region 3 so that the new length of region 3 will be 1 5 microns in the x direction stretch reg 3 length 1 5 cause the device to be stretched at the center of the region named gate so that the new length of that region will be i l5 mrorons mr she e direct on stretch reg gate length 1 5 cause the device to be stretch in the x direction so that new length of the region named gate will be 1 5 microns The extra area will be evenly distribute across the whole gate stretch reg gate center length 1 5 9 82 SILVACO International DevEdit cause the region named gate to be stretch to 1 5 microns i 1n the y direction The device is expanded ab th center ot the gate stretch reg gate y length 1
367. h as simulated time and temperature You can use such well tuned input deck fragments each of which performs a known operation to build entire input decks For design studies rather than tuning studies we recommend the VIRTUAL WAFER FAB VWF The VWF constructs and allows visualization of the entire process response surface opposed to meeting a single target It also acts in unison with the OPTIMIZER by storing the well tuned input deck operations for later use Since the input deck requires no modification and no special statements you can easily optimize any existing deck When there are satisfying optimization results the OPTIMIZER can copy the final parameter values back into the deck You can save all parameter and target data from the worksheet to disk and reload it at any time 6 1 2 Terminology This chapter makes reference to input parameters and targets Input parameters or just parameters are any numerical constants in the input deck Examples include implant energy diffusion time and gate voltage Targets are values either single points or entire curves that are extracted from the simulated results Examples include oxide thickness Vt and a curve of net concentration versus depth SILVACO International 6 1 VWF Interactive Tools 6 2 Using The Optimizer 6 2 1 Overview Using the OPTIMIZER is easy You must perform the following steps once an input deck runs with DECKBUILD 1 Define the input parameters 2 D
368. h width 2 x mesh loc 0 0 spac 0 25 x mesh loc 1 0 spac 0 25 y mesh loc 0 0 spac 0 25 y mesh loc 10 0 spac 0 25 region num 1 silicon electrode num 1 top name ground electrode num 2 bottom name anode doping uniform n type cone doping models conmob solve init log outtf dop5 doping log solve vanode 0 0 vstep 0 1 vfinal 2 0 name anode tog ofTr Extract init xnpllye e tdops doping Llog extract name res grad from curve i anode v anode where y val 1 Gide SILVACO International B 1 VWF Interactive Tools If you want to investigate how doping affects the resistance you can create a DBINTERNAL deck sweep in that defines an experiment a series of trials In this example the doping is changing between 101 and 101 em at three points per decade thirteen points in all go internal load infile resistor template in Sweep parameter doping type power range 1 0e15 1 0e19 13 save type sdb outfile resistance dat quit When you execute sweep in DBINTERNAL runs the resistor template in deck several times each time changing the value on the set doping line DBINTERNAL also collates the data generated by the extract name res line and saves it in sdb format suitable for viewing with TONYPLOT The resistance as a function of doping is shown in the following figure TonyPlot V2 8 29 A File 7 View v Plot v Tools v Print Properties 7 Help 7 Resistance as a function of doping Lage o E L Q o
369. hat provide a starting point for the third mode of operation This tutorial uses an application example that is supplied with DECKBUILD Please see Chapter 4 DeckBuild and the ATHENA and ATLAS USER S MANUALS or whatever simulator you wish to use for information about the other modes of specifying input SILVACO International Tutorial 2 4 Selecting and Loading An Example Do the following to bring up a list of the examples that are supplied with DECKBUILD 1 Move the cursor over the Main Control button and click and hold the right hand mouse button The Main Control menu will appear One of the options on this menu is labeled Examples as shown in Figure 2 2 EES j EEEE KLEES e ES zs NONE dir LA AIM IM ES HIT EE p nennen Su compu po E S s i puc t e c Cu CL cob BEE GH Main Control pare ersten erat Tu SS zer HARAN ee eee AAA AAA Figure 2 2 Main Control Menu 2 Without releasing the right hand mouse button move the cursor down to select the Examples item Then release the mouse button A window listing a number of example categories will appear Figure 2 3 ar n ET tio Sonera 1 M031 MOS Application Examples e MOS Advanced MOS Application Examples 3 501 SOl Application Examples 4 BJT Bipolar Application Examples 2 EPROM EPROM Application Examples 6 LATCHUP LATCH UF Application Examples 7 TFT TFT Application Examples 8 ESD ESD Ap
370. he Silvaco VWF suite of tools neither ATHENA nor ATLAS can easily create a circular region Select Add Region under the Region pop up menu Right click on Move Add Point and select New Circle Arc The right panel then displays Create Circle or Sector The first Mouse mode setting is Set Center Click on a point in the work area to select the center of the circle After selecting a center point for the circle the Mouse mode changes to Set Radius and Start Angle You can select a complete closed circle or restrict the region to a portion of a circle Once chosen the Mouse mode changes to Set End Angle The Points around circle option allows you to determine the number of points of the circle DEVEDIT 1s still approximating a circular region with straight interconnecting lines But you can choose between 30 degree segments 12 points to one degree segments 360 points the latter approximating a circle quite well 9 32 SILVACO International DevEdit Figure 9 27 Creating a Circular Region Summary The goal of creating a mesh in DEVEDIT 1s to accommodate competing interests of numerical efficiency and accuracy in device simulation DEVEDIT can be used to create a device structure in a graphics user interface mode as in Example 1 or create a new mesh in an existing structure as in Example 2 Parameters that you defined control the advanced mesh algorithm within DEVEDIT Advanced features in DEVEDIT include 3D structure creation a
371. he next command to be sent Single step through the simulation until you complete the gate oxidation step line 46 Notice the different commands sent to ATHENA and the run time output that appears in response to these commands SILVACO International 2 7 VWF Interactive Tools The gate oxidation is followed by an extraction step that determines the oxide thickness extract name gateox thickness oxide mat occno 1 x val 0 05 This command is an example of DECKBUILD s powerful EXTRACT capability which allows you to determine various features of the device that is being simulated This statement determines the gate oxide thickness More complicated examples of the EXTRACT capability are used Section 2 5 11 Extracting Process Parameters and also in Chapter 5 DeckBuild Extract Single step through the extract statement Note that the prompt in the tty region changes from ATHENA to EXTRACT as actions associated with this command are performed The prompt reverts to ATHENA when the EXTRACT operation 1s complete 2 5 2 Plotting A Structure 2 8 At any time during process simulation TONYPLOT can be used to display the current structure DECKBUILD makes it very easy to do this without any modification of the input deck Before attempting to plot the current structure you should click anywhere in the text edit region to deselect any text selected Ge as the result of executing an instruction This is necessary because TONYPLOT at
372. helpful If out file is not specified the run time output goes to stdout e simver simulator version specifies that the simulator should be started with the specified version The simulator are invoked as simulator V simulator version gt If no simulator is specified the default simulator uses this version Note sv is also accepted as well as simver help displays a list of the DECKBUILD and XView command line options e remote hostname sets current simulations to be executed on the specified host Although this option for interactive use can be used it is intended for batch mode simulation In interactive mode you can select remote hosts from the Simulator Properties popup See Section 4 15 Remote Simulation for more information e editfont lt fontname gt allows the font for the text and tty sub windows to be specified as required e noplot specifies that no plot commands within the deck are executed e inpipe lt input pipe outpipe output pipe specifies input and output pipe for communication with other products Examples The following command will start DECKBUILD in interactive mode and pre load the specified file deckbuild filename in amp DECKBUILD can be submitted as a batch command on the UNIX command line This method runs an input deck and quits at the end of the deck You can submit a number of jobs for serial execution in this manner The format of the command uses the run option
373. history files should be automatically removed at the end of a run and even the nice value of the simulator a Deckbuild Main Control Category Control Pad Formatting Write to Text editor Replace selected text Always Change insert point Next line Auto MaskViews Plot structure Immediate Remove history files Always Kill simulator SIGKILL Monitor convergence Enable Monitor strings Enable String list System commands Enable Disable Nominal variables Default load filter in Remote shell command rsh Remote mount string tmp mnt Simulator nice value 10 20 _ _ 19 Auto MaskViews Select cutfile No active structure Figure 4 12 Main Control Options Category Write to setting determines what happens when WRITE is clicked on any of the syntax popups It allows choosing to send the text to either the text subwindow or directly to the simulator running in the tty subwindow or both The default is Text Editor only Replace selected text tells DECKBUILD what to do when WRITE is clicked on while any line of text is selected highlighted in the text subwindow This situation often comes about after parsing a line of the deck see Section 4 7 2 Parsing the Deck DECKBUILD provides the choice of replacing the selected text with no confirmation confirming each replacement or not allowing replacement at all If you activate Confirm then DECKBUILD displays a notice prompt to
374. icularly inefficient and requires 225 trials SILVACO International B 7 VWF Interactive Tools B 5 2 endsave Syntax endsave Description This command tells DBInternal to stop saving data to the current file See the save command for more information Example save type sdb outfile example out Sweep parameter doping type power range 1e15 1e19 13 endsave This stops DBINTERNAL from trying to save any more data to example out B 5 3 log Syntax log outfile filename root Description This command tells DBINTERNAL to keep the output generated by the child DECKBUILD for each trial When generating the temporary input file for a trial DBINTERNAL uses the filename root and appends the ID of the trial for example the first trial has an ID of zero and the second trial has an ID of one The usual command is issued to run the trial deckbuild int noplot run lt infile gt outfile lt infile gt out At the end of the trial only the infile is deleted and the lt infile gt out will remain Example load infile example in log outfile keep Sweep parameter doping type linear range 1 4 4 This will generate the files keen out keep2 out keep3 out and keep4 out B 5 4 monte carlo Syntax monte carlo numbers num trials gt NA parameter lt paraml gt type mc type coeffs list of numbers parameter lt param2 gt type lt mc_type gt coeffs list of numbers Description The monte_carlo command
375. ie ieri Re iienaa aa aiai 6 10 Folding gelunn 6 11 Bi EE 6 9 Optimizer Results SE d EE 6 23 Optimizer Setup Salle 6 20 A a EE 6 20 OPTOLITH A A A AO 10 21 Phase and Transmittance Values coooocccconnccconocncn no 10 17 elle DE 10 1 UNINC EE 7 86 Overlays Beleg el oro tar EE 7 84 SiC T CES 7 84 CUINES eds 7 85 DISPI IO EEN 7 84 SILVACO International AAA nnn HAUT EU C PrOpE ES D keanns Semis See also TonyPlot P Parameter Type BOOLEAN t EP Phase and Transmittance Values Phase Display TEE 1 lat 1 Transmittance Display Mode occooocccccocccccoccccnnnconnnncnnnno 1 Physical Models a dd A aoa See also Statistics Display Plot Control MOUSE cado dal aos A a Selecting PIOUS e eh ee okt aes Re le Plot Display E ME See also 2D Mesh Plot Display PIOIS ee E A AM Sotto ee 2 15 Plotting 2 D OITU6 Ul lee suisse EEEN Conor dl le ei O GUIAS cantara dansa rias Modifying See also TonyPlot oooocccccconncococcoconncononnoo A A codes ue Ride mille o PURUS Plotting The Current Structure mee ccc POISSON SOV GR EE Applying A Bias To A Layer cccsseceeeseeeeeseeeeeeeeeeneeees elsi cse ERR ED PCIE Polar rice Positioning Key Boxes REENEN Printer Bel 8 ele EE Printer Drivers Stack Size See also TonyPlot cc sesseeeeseeeeeeeeeeeeeees Printing Editor Soror MR ER zii MD cS Printing Plots Adding
376. ied amount before preforming join SURFACE ALIGN lt boolean gt If true perform the necessary adjust surf align to have the semiconductor regions in both devices aligned at the top or left side of the joined device The default is surface align false SPACER MATERIAL lt c gt sp mat Specifies which material joins the two devices De Silicon Aluminum AlGaAr etc See Generic Parameters for a more complete list SPACER THICKNESS lt n gt The thicknessness of the spacer inserted between the two devices MIRROR lt boolean gt FLIP Take a mirror image of the new device before merging it into the existing device The default 1s not to mirror the new device AUTOMATIC JOIN 2 boolean AUTO JOIN If two regions made up of the same material presently touch the regions will be joined into one region The attributes from the region with the lowest id 1s used for the combined region The default value 1s true Note As of this edition the spacer parameters were not ready for release and can not be included in Version 2 0 0 9 13 13 MESH Create new mesh using previous set parameters Syntax MESH MODE MESH BUILD TENSOR PRODUCT DELETE Description When the mesh card is used the following steps are performed Deletes any existing mesh SILVACO International 9 73 VWF Interactive Tools 1 Performs automatic boundary conditioning if set See bounday conditioning card for more details 2 Creates a base me
377. ies mesh parameters and constraints and boundary conditioning are all done similarly in 3D as 2D Any user wishing to use DEVEDIT3D should first read either or both of these examples DEVEDIT3D creates a prismatic based 3D solid consisting of several 2D planes Each region is initially defined throughout all Z planes then the region must be defined for beginning and ending Z planes One capability of DEVEDIT3D is to extend an existing 2D structure created in ATHENA into three dimensions Such an example is discussed below Start DEVEDIT3D by entering devedit3d amp in a UNIX terminal window In a similar fashion to Example 2 above start DECKBUILD and load example mos2ex04 into DECKBUILD In DEVEDIT load in mos2ex04_0 str by right clicking on File then Load a DevEdit Load window opens select the file mos2ex04_0 str and enter an End Z value of 1 1 then click on Load File You can modify the polysilicon gate in the same manner as the 2D version by selecting the region and select Regions Modify Region The x and v points are maintained but the Start Z and End Z planes should be changed to 0 3 and 0 8 respectively Click on Apply In order to add aluminum electrodes select Regions Add region and specify the X and Y coordinates either by mouse or by keyboard of 0 15 0 15 0 15 0 05 0 6 0 05 and 0 6 0 15 The Start Z and End Z should be set to 0 0 and 0 1 Toggle the electrode button and select drain
378. ified in terms of UNIX search strings with and used as wild cards Files for which the switch must not be used are listed between a set of brackets and File types between brackets are separated by a forward slash For example if you want to specify a command switch option that would be used with all files which ended in std or str and did not contain a Z 1 e the file mosz str would be omitted then enter the line st str std Z e Run in Background This option is used to select whether MANAGER waits for the application to complete before continuing If MANAGER runs the application in the background then it continues without waiting for the application to finish The Color choice field on color systems only allows the color used in the fill area of the icon image to be selected The Add button copies the currently selected item to the end of the list so you can add or modify applications The Delete button removes an item from the list Clicking on the Save button causes the applications setup to be saved The saved file is stored in the HOME silvaco directory 3 4 SILVACO International Manager Note The configuration file formats have changed slightly from Version 1 5 to Version 1 6 of Manager Using the old format files with the new version of the program may cause spurious colors for the icons to be displayed 3 2 7 File types You can edit the file types listed in the file window using th
379. imple electrical simulations on 1D devices TONYPLOT allows plots to be rescaled zoomed and panned Grids can be added axes customized and arbitrary labels drawn on the data All titles marks labels ranges and so on are automatically set to useful defaults but can all be explicitly set whenever necessary The appearance of all plots in TONYPLOT can be totally customized and there are many properties that can be tailored to suit either a certain user or the requirements of a particular set of data TONYPLOT supports a wide variety of different printers and can be setup to print to any size of paper TONYPLOT can be used to study the output from Silvaco s process and device simulators ATHENA and ATLAS It also plots data from the process database SPDB When used inside the VWF framework TONYPLOT can display regression models response surfaces scatter plots histograms SPC charts pie charts and more SILVACO International 7 1 VWF Interactive Tools 7 1 2 Online Help TONYPLOT includes an online user s manual which can be accessed with a single mouse click If the manual does not answer a particular problem help from Silvaco support staff is always available There is a direct interface to email in TONYPLOT for sending your comments to us 7 1 3 Terminology The following words and terms are used throughout ToNvPLoT and have certain meanings and relationships A review of the following summaries will aid in the u
380. inate these problems The VWF AUTOMATION TOOLS contain software tools that design simulation based experiments generate input decks submit runs in a networked computing environment store results and analyze results These capabilities make it extremely easy for engineers to perform large simulation based experiments that mirror existing experimental development procedures The VWF AUTOMATION TOOLS use the tools of the VWF INTERACTIVE TOOLS For example DECKBUILD TONYPLOT DEVEDIT MASKVIEWS and OPTIMIZER as well as many additional specialized tools Data is automatically and transparently transferred between all the tools that comprise the VWF 1 3 2 VWF Experimentation Experimentation in the VWF AUTOMATION TOOLS starts with a baseline input deck The effects of varying specified input parameters is investigated An automated sensitivity analysis of the effect of input parameter variations on outputs is usually performed first Splits on any desired parameters are then performed You can specify a few parameter variations or set up a large split lot type experiment You can define the values of split parameters These values can also be generated automatically using built in design of experiments DOE capabilities A graphical worksheet associated with an experiment is generated automatically You can directly make changes to the experiment on the worksheet The input decks associated with an experiment are generated and submitted automatically
381. ine Response Surface Analysis cccccccsseeeeesesseeeeeseeeeeeeseees See also Advanced Features Automation Tools PRC SUM A E EAE E tae tl LO AE EE Roll Off Directions Rolloff Both Rolloff High Rolloff High P Step A Rolloff Low P Step Rolloff P Step Rolloff Step Rolloff Step P High Rolloff Step P Low Roll Off Functions ANALYTIC FUNCTIONS carr COMBINING IMPURITY ROLLOFFS eese DELETING IMPURITIES eee DOPING PROFILES EDITING IMPURITIES EE Index 8 RSM Display UR HE cT UN 7 29 See also 1D RSM Graphs Pel EE 1 29 OU a ld TE e 7 30 See also 2D RSM Contours SD OUMACES il ibi 7 30 See also 3D RSM Surfaces alc mE 4 46 S Saving Mesh Files Meshing Example 1 Ewell 9 18 Command FE uta id 9 18 HERE ee 9 17 Saving Mesh Files Meshing Example 2 BACA MOIE del 9 27 Comimand GU 9 27 cil ee 9 27 Saving Ihe DECK E 4 9 Scatter Plots EE 7 32 YAN pel 7 32 See also Statistics Display Semiconductor Process Data Base eee 1 5 Sensitivity EN 1 7 See also Advanced Features Automation Tools Sequence COO qp e e ed w 7 63 Set Files Gi EE 7 82 A A 7 82 SA A A 7 83 See also TonyPlot Sheet Resistance Beneath Oxide Spacer oooccccocoocnnccccooconncconconconanonononnnos 2 23 UE GE 2 23 N Source Drain eeeeee 2 22 Sheet Resistance Calculation A 4 SEET 2 22 SMON EE 7 29 Silvaco Standard Structure File str EE 9 5 SAVINO es
382. ine Y A selection box is specified by holding down the left mouse button and dragging over the area to be refined Each element in the box is reduced in size by a factor of two per direction The mesh inside the selection box can also be relaxed in a similar way by selecting the Unrefine menu option Meshbuild can cause mesh outside of the defined box to be effected also 9 9 8 Manually Relaxing A Mesh A mesh that has been refined manually or refined adaptively on an impurity gradient can be relaxed A mesh that was generated purely from a set of boundary points cannot be relaxed To relax a mesh select the menu options Mesh Refine Box Unrefine Define a box by dragging the mouse over an area with the left mouse button held down The mesh is refined in the area of the box Meshbuild may cause mesh outside of the defined box to be effected also The unrefine attempts to double the size of each element inside the defined bounding box 9 9 9 Tensor Product Mesh A tensor product mesh 1s one that runs from top to bottom and from left to right at every point on the mesh It 1s highly inefficient but produces straightforward matrix conditioning After a structure has been defined it can be meshed using a tensor product algorithm DEVEDIT supports a modified tensor product mesh using the following algorithm All boundary points are used to create a true tensor product mesh however since there can be new points created during that process the
383. ine from the PMOS mesh and display the cross section plot as it appeared when the set file was created 7 24 3 Setfile Syntax Set files use TPCS statements to store setup information Also included in a set file is the version of TPCS used to create the file Those familiar with TPCS commands will be able to create set files by hand where necessary or modify existing set files Set files can also be used as examples of various TPCS syntax rules SILVACO International 7 83 VWF Interactive Tools 7 25 Overlays One of TONYPLOT s most useful features is the ability to directly compare different sets of structure data This not only means loading several output files at once and looking at each one in the same view but also overlaying the data sets in the same plot subwindow When different files are overlaid the plot 1s called an overlay plot and has some characteristics not shown by normal plots Each structure 1s drawn on a separate level in an overlay plot and the levels are transparently stacked upon one another Each level uses the same axes and display settings so that the data can be readily compared Obviously each level must be of the same plot type 2D Mesh Cross Section or XY Graph 7 25 1 Making An Overlay Overlay plots can be created in one of two ways If the files to be overlaid are already loaded into TONYPLOT each in its own plot subwindow a new overlay plot can be created by selecting the plots to be overlai
384. ing 1 e clicking Apply you can proceed to Refine on Quantities and Mesh Constraints SILVACO International 9 23 VWE Interactive Tools Mesh Parameters Under the Mesh pull down menu there is an option of Mesh Parameters along with Boundary Conditioning Base Mesh Height and Width may be used to create a fairly uniform underlying mesh By making these smaller it may help create more symmetric meshes for some devices For most devices setting Mesh Constraints provide the same results and also allow for more fine tuning Therefore these parameters were not used in this example Refine on Quantities This action allows you to refine the mesh on gradients of various quantities including donors acceptors total and net doping molar composition if the structure was imported from ATLAS other quantities including electrical field and potential are available This is a useful tool for refining the erid on areas that require a finer grid namely where gradients exist This tool is very useful particularly near p n junctions Right click on Mesh then select Refine on Quantities then right click on the Add button and select Net Doping Then right click on the Mesh pull down menu and select MeshBuild again or left click on Mesh which selects MeshBuild by default MeshBuild operates by building a mesh with instructions of mesh generation which have been modified when the Refine on Quantities was changed to include gradients in
385. ing were performed these points would remain and require mesh points at these locations Click on Apply underneath Boundary Conditioning The mesh is removed but many border points are removed also Figure 9 16 Border Points Defining Material Boundaries Before Boundary Conditioning Figure 9 17 Border Points Defining Material Boundaries After Boundary Conditioning The Max Line Slope is a ratio greater than one between the length X and height Y of mesh triangles along a material boundary If a mesh triangle has a line slope greater than this value the triangle is subdivided such that the original material boundary line is divided into two lines one line horizontal or vertical and the other line with an angle set by the maximum line slope 9 22 SILVACO International DevEdit Au X Figure 9 18 Boundary Conditioning with Respect to Maximum Line Slope Note The Maximum Triangle Ratio should be larger than the Maximum Line Slope The Rounding Unit is a distance to which all boundary points are rounded to an even multiple of this value The Line Straightening value is an angle If two boundary segments have a joining angle equal to or greater than 180 line straightening the two line segments are combined by removing the joining point b a t a ne a C b Figure 9 19 Line Straightening In general the default settings for boundary conditioning are satisfactory for most structures After boundary condition
386. inimum concentration measures the peak or minimum concentration of any dopant or net dopant for the whole 2D structure or within a specified area in any material or all materials and also within any junction defined The actual xy coordinates of the maximum or minimum concentration can also be retrieved e 2D material region boundary returns the maximum or minimum boundary of the selected material region for either X or Y axis Therefore the outer boundaries of any material region can be extracted e 2D concentration area integrates specified concentration of any dopant or net dopant for whole 2d structure or within a specified location e 2D maximum concentration file CCD creates a Data Format file with the XY coordinates and the actual values of the maximum concentrations stepping across the structure This file can be loaded into TONYPLOT when in ced mode to show a line of maximum concentration across a device e ED tree creates one branch of a Smile plot or ED tree from multiple Defocus distance against Critical Dimension CD plots created for a sweep of Dose values by OPTOLITH These plots are all written in a single Data format file e Elapsed time extracts time stamps from a specified start time at any point in a simulation You can reset the start time as required SILVACO International 5 3 VWF Interactive Tools Note This extraction is not CPU time The built in 1D Poisson device simulator is used to calculate sheet resist
387. ion e We also recommend that you add the line structure out file example2 str at the end of the DEVEDIT section of the input file to explicitly save the structure in a structure file Any filename can be used with the convention of the str extension used for structure files With this procedure you can run the entire deck and incorporate the mesh re creation from DEVEDIT Any minor changes in the ATHENA process simulation file does not require changes to the DEVEDIT command file 9 28 SILVACO International DevEdit An alternative method of using DEVEDIT in batch mode is to use the command file as a distinct file and not incorporate it within ATHENA ATLAS input file s As mentioned above you must edit the file to remove the structure definition up to the Set Meshing Parameters line However DEVEDIT must initialize from the original structure This can be accomplished by including an initialize command immediately after commencing DEVEDIT hence go devedit init infile moslex01_0 str then continue with the command file The ATLAS file would then begin with go atlas mesh infile example2 str or whatever name of the structure file the user defined at the end of the DEvEDIT command file 9 4 4 Advanced Features 3D Structures Treatment of three dimensional structures in DEVEDIT3D is much the same as the two dimensional version with the exception of the Z plane The handling of region addition and modification electrodes impurit
388. ional TonyPlot3D Graphics Hardware There are two ways of producing screen images One way is a software renderer which uses graphics primitives implemented in software Another way is a hardware renderer which uses native graphics hardware implementing the OpenGL API version 1 1 or higher The software renderer works on workstations with True Color frame buffers and an X server You can use xdpyinfo to obtain information about the X server on your machine To run TONYPLOT3D without graphics acceleration use the nohw command line option The hardware renderer requires a True Color graphics adaptor that supports OpenGL API version 1 1 De the Visualize fx5 and fx10 graphics cards Memory TONYPLOT3D requires a minimum of 128Mbytes of real memory To improve performance however more memory such as 256Mb or even 512Mbytes is strongly recommended To determine how much memory there is in your HP workstation log in as root and enter this command etc dmesg This generates a list of various system messages that were produced when your system was rebooted last Look for a message like the one shown below Memory Information Physical 98304 KBytes OpenGL Library TONYPLOTSD is designed to work with OpenGL API version 1 1 or higher Try the following web site for information on obtaining OpenGL drivers for your graphics hardware http www software hp com Then choose search request OpenGL or contact the Techincal Suppor
389. irst item in the list is Go up a level which moves to the parent of the current directory The directory can be changed by clicking on any line with a folder icon including Go up a level or by typing in a new path in the Directory text field To load a file click on the name of the file in the list and choose an option from the Load menu The options control the way in which the file is loaded Add creates a new plot for the structure this is the most common option and can be chosen simply by clicking on Load button Replace replaces the structure s in the first selected plot in the view with the new structure Overlay overlays the new structure on to existing structures in the first selected plot If Replace or Overlay is chosen and the view contains no selected plot the effect is the same as choosing Add If the desired file is not in the list a name can be entered into the File name text field Then choosing a Load option loads that file if it exists e Filter is used for screening irrelevant files and defaults to str to show structure files only This can be changed in the Filter text field if needed When the Return key is pressed the list is updated SILVACO International 7 7 VWF Interactive Tools 7 8 to show files not masked by the new filter The default file filter can be set from the Miscellaneous category of the Properties popup described later e Clicking on the MENU button while the pointer is over the list of files
390. is is the maximum ratio of the gap between two adjacent z planes and the gap to the next z plane Replaces Card ZPlane Z n MaxSpacing lt n gt MaxRatio lt n gt SILVACO International 9 85 VWF Interactive Tools 9 13 27 GENERIC PARAMETER BOOLEAN TYPE Parameters described like param lt boolean gt are boolean parameters meaning they can be either true or false There are several ways to set the parameter to true They are e param true e param fjust listing the param sets it to true param on e param 1 e param yes There are several ways to set the parameter to false They are e param false e param e param e param off e param 0 9 Daram Hmuo The default value for a boolean parameter type is dependent on the specific parameter 9 13 28 GENERIC PARAMETER COLOR In X window mode regions and objects can have a color assigned to them Regions have a default color base on their material However the card with color parameters can override these colors The color can be set using a standard 24 bit number with eight bits for each color component red green and blue The easiest way to use this 1s use hexidecimal values by starting the number with Ox Each component than has a range from 00 no color to FF full color See the example below color OxFFOOOO Full red color 0x00FFOO Full green color 0x0000FF Full blue Not all color combinations are supported by DEVEDIT The closest
391. is necessary to reset it when you reach the bottom of the deck if you want to starting from the top again In fact the current line can be set to any line in the deck not just the top line Set the current line by highlighting part or all of the 4 8 SILVACO International DeckBuild line in the input deck and click Line The Line field will be updated to show the new current line number Plotting The Current Structure DECKBUILD can plot the current device at any point in the process while stepping through the deck This permits you to visualize what the device looks like at any point For example after a gate oxide step in a MOS device you may want to investigate the oxide thickness or look at a doping profile after an implant step To plot the current structure first un highlight any highlighted text on the screen An easy way to do this is to single click SELECT anywhere in the input deck Then click SELECT on the Tools menu button DECKBUILD saves the current structure from the simulator then starts TONYPLOT on the structure In a few moments TONYPLOT will appear Note Single clicking SELECT on a menu button automatically chooses the default item on the menu which is Plot structure TONYPLOT can be kept on the screen for as long as necessary You can run additional TONYPLOTS later in the process flow to show how the formation of the device progresses You can also show layout files using the MASKVIEWS layout editor To start MASKV
392. is set to Page then only the plot on the current page is selected all plots on the other pages are unselected 7 5 2 Pointer Zooming To zoom in on a specific portion of a plot a method known as pointer zooming can be used By dragging the pointer across the plot a dynamic box can be drawn around the area of interest If the SHIFT key is held down while the mouse is being dragged the start point of the rectangle can also be moved When the mouse button is released the plot is redrawn so that the area within the box fills the whole subwindow Note All selected plots of the same type are zoomed in by the same relative coordinate of the zoom rectangle When at least one plot has been zoomed the zoom panner appears Figure 7 5 The panner consists of nine buttons eight directional and a central zoom out button Press the directional buttons to pan around the plot at the same zoom scale Press the central diamond to zoom out and restore the plots to their original sizes Note Zooming can also be done be specifying the exact coordinates of a zoom rectangle This is done using the Zoom popup accessed by choosing Set Zoom from the Plot menu Figure 7 5 Zoom Panner SILVACO International 7 13 VWF Interactive Tools 7 6 Key Commands 7 14 Key commands are available for some plot control Point at a plot with the mouse and press one of the following keys e d duplicate duplicates the plot as if Duplicate were chosen from
393. isplayed if the layer currently contains polygons 10 8 SILVACO International MaskViews If the target simulator is set to ATHENA see Section 10 8 Properties the following additional items are displayed on the popup e Electrodes This item is used to indicate that the current layer is a conducting layer and mask label names used will be passed on to the simulator as electrode names Thickness Deposited mask material thickness is specified in the thickness field and its material type can be set to either Resist or Barrier This information is used with the ATHENA deposit statement see the ATHENA USER S MANUAL to form the masked layer If the target simulator is set to SSUPREMS then the resist thickness can again be specified but its type cannot Selecting Define gt Biases makes an alternative method of accessing the Delta CD values available The bias value listed in this popup is identical to the Delta CD value listed in the layers popup The complete set of biases Delta CD s can be loaded from and saved to files using the File loader popup displayed by selecting Files Biases 10 4 3 Drawing Objects All masks objects used inside MASKVIEWS are polygons which may be irregular and contain up to several hundred sides Most drawing and editing is performed in terms of polygons Facilities however are provided to allow you to draw in terms of more regular shapes The Objects popup Figure 10 5 controls the cur
394. it from History Save as defaults Figure 4 26 The History Popup The History setting turns the entire mechanism on or off If enabled DECKBUILD saves history files after each significant simulation step If disabled history files are not saved and the simulation runs a little faster History can be turned on and off as the simulation progresses DECKBUILD allows re initializing from any part of the deck that was run while history was enabled History is enabled by default Length determines how many trailing process flow steps to remember how many history files to maintain The default is 25 although up to 100 steps may be saved When the limit is reached DECKBUILD starts re using the old history files in a loop Skip determines how often history files are saved The default value of 1 indicates that every significant process step causes a history file to be saved A value of 2 indicates every other step and so on Significant process steps are implant diffuse etch deposit initialize load profile and certain other statements Comments plot statements blank lines and certain other details are ignored History files are not saved during device simulation Path if activated specifies the directory that the saved history files are saved in This may be useful if large structures are being simulated and disk space for the current working directory is not abundant Note If a simulation is executed with history and the path then al
395. ither change Remote Tmp Directory setting under the Main Control popup Options category to an accessible directory or contact your System Administrator to set the current remote tmp directory to be write accessible e Tmp Dir Mount Error For remote simulation the temporary directory must be mounted for both the local and remote machines To continue either change Remote Tmp Directory setting under the Main Control popup Options category to a directory mounted for both machines or contact 4 58 SILVACO International DeckBuild your System Administrator to ensure the current remote tmp directory is mounted on the remote host in addition to the local machine Note Use of remote simulation is not recommended and not supported when DECKBUILD is executed from a remote machine and displayed locally Either remote login to a machine and execute DECKBUILD and the simulators on that host or run DECKBUILD on your local machine and use remote simulators SILVACO International 4 59 VWF Interactive Tools 4 16 Statements 4 16 1 Overview This section contains a complete description of every statement and parameter used by DECKBUILD The following information is provided for each statement e The statement name e The syntax of the statement with a list of all the parameters of the statement and their type e A description of each parameter e An example of the correct usage of each statement 4 16 2 DeckBuild Commands The following list iden
396. ither the Tools menu or from the Control Pad Normally DECKBUILD saves and plots the active structure right away The simulator however may be busy executing several lines from the input deck This can happen for example after clicking on the run button which causes DECKBUILD to queue up many lines from the deck to be run and feeds them down one at a time In this case it is possible to define whether the save and plot commands are placed at the beginning or at the end of those queued commands Choose either Immediate or End of Buffer The default 1s Immediate Remove history files defines what DECKBUILD does with history files when DECKBUILD exits Choosing Always causes DECKBUILD to always clean up history files after itself Confirm brings up a confirmation notice prompt when DECKBUILD exits You can then confirm or cancel history file removal Never ignores history files and does not elicit a notice prompt This 1s useful if you want to modify the history files on a regular basis Note It s OK when history files are not removed as long as there s enough disk space They ll eventually start getting re used so they won t pile up endlessly See Section 4 9 History for more information The default is Confirm Kill simulator determines how DECKBUILD kills the simulator when the kill button is clicked on SIGKILL is guaranteed to kill the simulator but it does not give the simulator a chance to clean up after itself If the simulator uses any
397. iti iate Ei 9 5 Simulation mii Zeene 2 7 tepping TAROUGN ccm 2 7 See also Process Simulation SmartSpice A I on ERR LEES 4 56 A 7 27 Source Attributes Gaus aN ia e a A a 9 40 SOUC ONO AUN E 2 19 SPC Limits Control MMS aan aia 7 91 SILVACO International Split Points Experimental Trees and Worksheets See also Advanced Features Automation Tools seo itt go usen ie ICE TCU ME EPOR SSURREMS staal esd cus EA ELE 4 5 See also DeckBuild Statistics Display BOM EEN Wiel CEET EE See also Pie Charts CAUSE PIOUS a SU Be Re LL SOD ALFUNCIO EE SWEAR senie re eae a ER 1 Structure Editing EDITING SUMMARY ar etit lea bo aa tein a A Dogs xem o eege Apel TE E dl TEE SUbWIDGOOW EE SA e Ta e See also Statistics Display Surface Analysis RESPONSO in See also RSM Display SMETE E EE Synthesis A M P Ie a T Target Editing Nurn ric TT Target Name ausense iss eebe be ele eege E A O A Targets f Xe oro E EEN T EM atten caches tected cans sth dada ENAbDINO Disabled t oed abes istum eaeque Folding COMMING teisesse ca aot uses cio so t vue cuta a aei eiecit See also Optimizer Text Editor A ME er E Text Subwindow Adding And Deleting Text EE CODVING TEXT sed uuu Cont T A Cutting And Pasting acid a sie au Set ieee hed Dares Editing Input Decks ess sees ETFOP MOSSBUOS iia
398. ity name and slider become active When the checkboxes are not checked the impurity information becomes inactive and appears grayed out Slide the concentration slider to the desired value Choose an exponent for the concentration by clicking MENU over Exp A list of exponents appears Release MENU over the desired value Finally write the SSUPREM3 INITIALIZE statement to the deck by clicking on the WRITE button A line similar to this appears as INIT SILICON ORIENISTOO THICK 4 00 SPACES 800 In this fashion you can build a process sequence by serially invoking popups from the Commands menu Most of the commands needed are on the Process pullright menu Figure 4 4 For example to open the SSUPREM3 Diffuse popup click on and hold MENU on the Commands menu button The Commands menu appears While still holding MENU move the pointer down to Process Note There is a small right pointing triangle to denote a pullright menu Slide the pointer over to the right a few millimeters and the Process menu will appear Move the pointer down to Diffuse and release MENU to invoke the popup SILVACO International DeckBuild You can pin the Commands Process and other menus for convenience A pinned menu stays in place on the workspace and does not disappear after choosing an item unlike an unpinned menu To pin a menu first invoke it with MENU Then while still holding MENU move the pointer over the pushpin shown at the upper left corner The pu
399. ity panel If a user defined profile is selected as the rolloff function in the Add Impurity panel or the Modify Impurity panel The peak value of that impurity distribution 1s set to the value of the doping profile at distance equal zero The impurity is also set to match the profile Both fields are grayed out as long as a doping profile 1s being used as a rolloff function While different doping profiles can be used in the X and Y directions they must be compatible 1 e have the same value at distance equals zero and be the same impurity type 9 12 3 Join Function There are currently three join functions First the multiple Join works by computing the Y rolloff and applying the X rolloff This effectively is a multiply of the two rolloffs Second the interpolate join works by considering an arc at equal distances between the Y rolloff and the X rolloff though the locations and interpolating the values along the arc Third the miter join takes the lower value after allowing for the X rolloff or the Y rolloff User Supplied Variables e Multiply Join Peak Concentration P d Y rolloff distance depth distance Ay d X rolloff distance lateral distance Ax doping D P e P 9 23 Interpolate Join d Y rolloff distance X rolloff Distance total depth distance d ie ER 9 94 Be 9 25 d d 9 26 8 Ax Ay doping e e r1 e sl e P 9 27 e Miter Join d Y rolloff distance depth distance Ay
400. ium Beryllium Magnesium Aluminum Gallium Carbon Tncrum Chromium Germanium impurity QSTRING NUMBER E Beal or Integer values lt OSTRING gt J Quoted String 5 3 2 DEFAULTS The following default values will be assumed 5 20 name QSTRING MATERIAL SIMPURITIY mat occno lt EXPR gt June occno lt EXPR gt region occno lt EXPR gt interface occno lt EXPR gt val occno lt EXPR gt datafile lt QSTRING gt out file lt QSTRING gt for example silicon name None material silicon impurity net doping mat OCccno 1 JUNC OCENO l region occno 1 interface occno 1 val Ocen o 1 datafile results final outfile extract dat SILVACO International DeckBuild Extract bias step lt EXPR gt bias step 0 25 bias start lt EXPR gt gt bias start 0 0 bias stop lt EXPR gt Dras stop oyi temp val lt EXPR gt temp val 300 0 sol FALSE semi poly FALSE incomplete FALSE X Val EXPR y val lt EXPR gt region lt QSTRING gt X val is set to be 5 from left hand side of structure 5 3 3 Examples of Process Extraction Note You can enter extract commands on multiple lines using a backslash character for continuation The syntax however shown below should be entered on a single line although shown on two or more lines The following examples assume to be extracting values from the current simulation running under DECKBUILD You can use saved s
401. ive Tools Default imp refine Abbreviations Scale Transition Value Z Dir Heat Flow Density tinea ol line oer im part Lies Gradient of timers lier Z Plane Index linear Preferred Impurity Full Name Note The number symbol the equal sign the single quote and the space symbol must be quoted 9 13 30 GENERIC PARAMETER MATERIAL Any of the following names can be used for material parameters Names can be abbreviated as long as the individual words remain unique in the list A dot can be used as a word separator otherwise multiple word materials must be quoted The short name is the preferred abbreviation A special effort will be made to keep these names unique when adding new materials Note The number symbol the equal sign the single quote and the space symbol must be quoted Possible Values Material Number Material Full Name Aliases Structure File ID TonyPlot Material Name Compatability Names Osh Il 1 EES e ee E e SOdOxlde Oxide 2 SIOSNA SILICON Nitride SENOS OHIO 3 SiNitride Nitride meme 0 CN 9 94 SILVACO International DevEdit Material Number Material Full Name Aliases Structure File ID TonyPlot Material Name Compatability Names pee EE DS hr ESC LLL ne meme 0 EN SECHER SSES SSES mmn LL ECONO ECOS EN e meme LL E e LLL meme LL Ee men ume 00 EN E mense LL B pem LLL mme LL B EC EN ECON ES
402. l collector i base where v val max i collector i base 5 5 10 Second Intercept Occurrence The following command creates a gate voltage against source photo current curve and calculates the second intercept of gate voltage for a source photo current of 2e 4 extract name 2nd Vg at Isp 2e 4 x val from curve v gate elect source photo current where y val 2e 4 and val occno 2 5 5 11 Gradient at Axis Intercept The following command creates a probe Itime against drain current curve and finds the gradient at the point where probe Itime is at a maximum extract name grad at maxTime grad from curve probe Itime i drain where y val max probe Itime 5 5 12 Axis Manipulation with Constants The following command creates a gate voltage divided by ten against total gate capacitance multiplied by five Adding and subtracting are also available extract name VGg 0 S v90 9g curve curvel a gate LIO 5 9 gare gare 5 5 13 X Axis Interception of Line Created by Maxslope Operator The following command calculates the X axis intercept for the maximum slope of a drain current against gate voltage curve extract name Xint for IdVg xintercept maxslope curve 1 drain v gate 5 34 SILVACO International DeckBuild Extract 5 5 14 Y Axis Interception of Line Created by Minslope Operator The following command calculates the Y axis intercept for the minimum slope of a substrate current against
403. l Y axis values If turned off areas below the Y 0 line have a negative area Use log of Y calculates the area using log values of Y rather than the true linear value This option is independent of the method used to draw the Y axis In other words it 1s possible to draw a curve on a log Y axis scale but calculate the area on a linear scale e Convert X um to cm converts from microns to centimeters X axis quantities are sometimes plotted in microns 1 e cross section plots but Y axis quantities are often given in terms of cm or cm Use this option to calculate the area with the X axis values converted from microns to cm e Results continually displays the current area and interval on the right e Line control positions the two lines that specify the interval used for area calculation These lines can be moved with the buttons marked with left and right arrows The lines can be placed at any of the features that are shown in the list A line can be moved directly to any feature by choosing either Move RED line to selected or Move BLUE line to selected from the feature list menu This causes the appropriate line to move to the feature currently selected in the list Add Label creates a label in the plot with the integral information Depressing the button multiple times updates the label with the latest Real and Interval values Using the Mouse and Pointer The mouse pointer can be used to move either of the marker lines
404. l renamed with a suffix For example a file called nmos in would be backed up to a file called nmos in To save the changes to a new file choose Save as from the File menu The procedure is the same as described above for saving a newly created file Editing Input Decks DECKBUILD allows you to search for text strings in a deck copy text from one location and paste it to another and add delete text To search for a text string choose Find and Replace from the Find menu The Find and Replace popup window appears with fields for text strings to find and to replace Enter the text string to find on the first line If desired also type in the replacement text on the next line To search for each occurrence of a string click SELECT on the Find button Successive clicks find successive occurrences of the text To replace a text string and approve each occurrence click on the Find button to find each string Then click Replace to replace the text At each instance of the text string if it is desired to replace the text and then search again click Replace then Find To change only the first instance of a string without approval click Find then Replace To replace all instances of the text string immediately choose Replace All Adding And Deleting Text Add text to the deck by placing the insert point anywhere in the text subwindow by clicking SELECT on the desired location and click the WRITE button from any simulator pop up window
405. l to the current loop iteration count is acceptable and simply results in the loop exiting at the end of the current iteration The break keyword causes the loop to exit immediately The next keyword causes the loop to abandon the current iteration and to begin the next without executing any statements between the 1 modify and the relevant 1 end statements The print command switches on the printing of user defined variables as described above Example loop steps 3 assign name paraml print n value 1 delta 1 loop steps 3 assign name param2 print n value 1 delta 1 l end l end 4 16 10 MASK Defines the position of the process flow where photoresist or barrier material is added with the use of the MASKVIEWS IC layout interface Syntax mask name maskname misalign lt misalignment gt btas lt bLas gt delta cd delta ca gt shrink lt shrink gt reverse optolith Description Mask is used to interface to Silvaco s general purpose layout editor MASKVIEWS The mask statement defines the location where photoresist is deposited in the flow of processing events The etched pattern is dependent on the MASKVIEWS cutline file which must be loaded into DECKBUILD Name specifies the name of the layer that defines the photoresist patterning This name must correspond to a mask level name contained in the MASKVIEWS cutline file loaded into DECKBUILD Bias and delta cd increase or decrease the width of the deposited
406. lanations are given To obtain a better understanding of TPCS you may study set files or contact Silvaco support for further help The following meta notations are used in the syntax descriptions int Any integer 1 e 4 lt string gt Any word s enclosed in quotes i e my world Indicates a choice of possibilities each separated by the vertical bar symbol i e on off is either on or off lt expr gt A floating point number or a mathematical expression that evaluates to a floating point number De 3 4 1 3e12 sin 0 1 4 8 3 etc 7 72 SILVACO International The statements supported in TPCS are as follows draw lt draw a load load load select select select select LAL uL string string gt replace string gt overlay lt int gt al di none auto delete show mesh on off show edges onloff show materials on off show Contours om ort show vectors on ort show light on off show junctions on off show electrodes onloff show threed on ort show points on off show lines onloff contours contours contours contours contours contours contours contours contours contours contours contours contours contours contours select lt int gt impurity Stcing type lines type fill outline onloff color rnm maximum auto maximum lt expr gt minimum auto minimum lt expr gt nsteps int increment lt expr gt materials all materials string on
407. last file loaded The default is to add the new file 1 e create a new plot The line TONYPLOT first str overlay second str loads in the file first str and then overlay second str on top of it This only applies to data files loaded from the command line files loaded from the File Loader are controlled separately add The default load method and tells TONYPLOT to stop overlaying files are they are loaded in This only applies to data files loaded from the command line files loaded from the File Loader are controlled separately ecd Allows the overlay of results of the deckbuild extract max conc file output on 2D mesh plots This is used in CCD analysis to determine the potential maximum minimum The da st and bin options to TONYPLOT are all optional When ToNyPLoT attempts to load a file it automatically works out the format of the data and load it in the correct manner The options override this action however if this is needed Here are some more examples of TONYPLOT command line options with descriptions of what they mean 1 To load two SPISCES log files temp340 log and temp450 1log and display the graphs overlayed in a single plot Oo tonyplot overlay temp340 log temp450 log 2 To load a SSUPREMA structure file called meshX str and set its display to a previous set up stored in mx set and then load a file containing IV data in user data format tonyplot meshX str set mx set iv data 9 To make
408. later section e About TonyPlot Shows a popup notice displaying the version number of the program and its component libraries SILVACO International 7 11 VWF Interactive Tools 7 4 The File Loader This popup can be used to load structures into TONYPLOT A list shows the current contents of the directory specified at the top of the popup All subdirectories are shown as folder 1cons as are all files matching the specified filter 7 4 1 Loading files To load a file from the File Loader highlight the name of the desired file in the scrolling list by clicking on it and then click on the Load button This creates another plot inside TonYPLOT to display that data To select multiple files hold shift while highlighting filenames Alternatively enter the name of the file to be loaded into the field marked Filename and then click on the Load button The Load button actually has a menu attached to it and this provides three different load options e Add the default load method it adds the new plot to the current TONYPLOT window Replace Replaces the first selected plot with the new plot that is created Overlay Overlays the data on to the data already in an existing plot if there is a plot selected The data is loaded and overlayed on to the first selected plot of the same type 7 4 2 Changing Directories The directory that TONYPLOT is currently looking at is shown at the top of the File Loader and its contents are show
409. ld voltage calculation is based on the calculated sheet resistance In MOS mode 1 D vt extraction the solver will calculate threshold voltage automatically First the conductance of the channel region will be calculated for each gate voltage applied If an NMOSFET structure is assumed then LU Bos qu ndx A 18 O corresponds to the oxide silicon interface and xinv 1s the boundary of the inversion layer Threshold voltage will be determined using the g V curve as an intersection with the V axis of the straight line drawn through two points on the g V curve corresponding to the maximum slope region shown below EL Ne La maximum slope line Vin Vo A 5 1 Breakdown Voltage Calculation Breakdown voltage calculation is based on estimation of ionization integrals for electrons and holes Breakdown is determined by the condition that one of the integrals is greater than 1 The ionization rates are calculated using the following equations See the Selberherr model in the ATLAS manual B BETAN E AN exp HE l A 19 B BETAP Go AP exp EC3 A 20 SILVACO International A 5 VWF Interactive Tools where AN AP BN BP ANI 7 AN2 77 BN1 1 BN2 1 AP1 6 AP2 1 BPl1 1 BP2 2 BETAN BETAP EGRAN AN1 if E lt EGRANAN AP1 if E lt EGRANAP BN1 1f E lt EGRANBN BP1 if E lt EGRANBP 03e5 cm 03e5 cm 231e6 V cm 231e6 V cm 71e5 cm 582e6 cm 693
410. le demonstrates how to incorporate the DEVEDIT re mesh syntax within the same input deck between the ATHENA and ATLAS sections You can start any text editor or use DECKBUILD for editing To start DECKBUILD enter deckbuild amp then left click on File Open and select a DEVEDIT command file example2 de SILVACO International 9 27 VWF Interactive Tools e The first line of the DEVEDIT is similar to DEVEDIT VERSION 2 4 0 R in which it is recommended that this line become a comment beginning with Then add as a new first line to read go devedit or if you want to retain the version number go devedit simflags V 2 4 0 R or whatever the version number of DEVEDIT in use Because the structure was initially created in ATHENA the DEVEDIT commands to redefine the structure boundaries is redundant and should be deleted The relevant section begins with Set Meshing Parameters hence all intermediate lines previous should be removed e This truncated DEVEDIT batch file should be moved or copied into the ATHENA ATLAS input file beginning after the ATHENA syntax and before the ATLAS syntax See figure batchDevEdit pcx The last line of the ATHENA section is tonyplot moslex01_0 str set moslex01_0 set and ATLAS begins with go atlas at the bottom of the DECKBUILD main window Deckbuild V3 10 4 A mosl exO1 in edited dir home brent Files Views Edit Finds Main Control Commands 7 j Tools s
411. lects the current simulator shown in the lower right hand corner of the main frame Changing the current simulator will cause a different menu to appear as described in the Section 4 4 DeckBuild Controls 4 7 1 Deck Writing Paradigm In general DECKBUILD uses one of two ways to write an input deck either all at once or line by line DECKBUILD uses each as appropriate Process simulation for example is an inherently sequential operation The same basic commands implant diffuse etch and deposit are used over and over again SSUPREM3 and ATHENA are good examples of how this paradigm works because each popup has a button used to just write the syntax for that popup command On the other hand the interface to MERCURY is represented as device specification and a set of solutions tests that are applied to that device In this interface click on a single button to write a deck 4 7 2 Parsing the Deck DECKBUILD has a built in feature that allows parsing any part of a deck to automatically configure the appropriate popup s For example to repeat a previous implant process command with some minor changes parse the implant statement To do this reset the controls of interest on the Implant popup place the text caret in the proper location and press the WRITE button To parse any fragment of text highlight the text and select Commands Parse Deck DECKBUILD scans the highlighted text determines the proper popups to change resets the
412. left footer of the main window will be displayed while the popups are being created When the change from one simulator to another is complete the new current simulator is shown in the lower right footer of the base window The current simulator is always shown in the lower right footer 4 5 3 Simulator Properties To access properties unique to each simulator click on the Sim Props button A popup is displayed that contains settings and options applicable to the current simulator including a switch for local and remote Simulation and command line arguments used to execute the simulator If remote simulation is selected the hostname of the machine that executes the simulator must be specified See Section 4 15 Remote Simulation for more information 4 5 4 Start Simulator The Start Simulator setting determines DECKBUILD s window layout Each of the four choices in the setting has an iconical representation of what DECKBUILD can look like text subwindow only or text subwindow with small medium or large tty subwindow displayed By default DECKBUILD appears with the tty subwindow displayed in the small configuration The current simulator is started when the tty subwindow is enabled From that point on the simulator continues to run even if the tty subwindow is made to disappear 4 5 5 Simulator Controls Three high level run time functions are provided on the Control Pad Init from History Plot Current Structure and Show C
413. less y val or y1 y2 are used y length or y stretch value can be used to force the stretch to be in the y direction Mixed parameters like x val and y stretch value should not be used together In general it is only useful to do line type stretches in areas where the impurities are fairly constant like the center of the gate on a MOSFET transistor This allows a gate s length to be quickly changed for multiple simulations This is described in the first five 5 examples below Parameters LENGTH lt n gt LEN X LENGTH X LEN This is the new x length of the specified region material x1 x2 area or y1 y2 area If none of these are specified the first region made of poly silicon is used If no such region exists it is an error Care should be taken not to shrink a region A warning is issued if the region shrinks If y val or y1 y2 are used this is the same as y length Y LENGTH lt n gt Y LEN This is the new y length of the specified region material or y1 y2 area If none of these are specified the first region made of poly silicon is used If no such region exists it is an error Care should be taken not to shrink a region A warning is issued if the region shrinks REGION ID lt c gt This is the name or id number of the region used to identify the stretch line at the center of this region If center false than the whole region 1s stretched MATERIAL lt c gt The first region found made of this material is used to identify the s
414. ll be defined 2 16 SILVACO International Tutorial 2 5 9 Contour Plots To create a contour plot select Plot Display to display the 2 D Display Control Control Window Figure 2 16 Tonyplot Display 2D Mesh fe 5 Y Ems Y so vl 7 apply 1 Reset Dismiss 7 Define Figure 2 16 2 D Display Control Window We need to enable domain plotting plot materials in different colors plot net doping contours and plot device junctions To enable these features select the icons shown in Figure 2 17 Tonyplot Display 2D Mesh fe es 5 f Figure 2 17 2 D Display Icons Next access the Contours popup Figure 2 18 by selecting Define Contours a Tonyplot Contours Set Number ES gt Quantity T Net Doping Materials Silicon EI Polysilicon Aluminum Rainbow 10 Rainbow 20 Rainbow 10 Reset Dismiss J Functions Temperature Reds Greens Blues Gray scale Level colors Figure 2 18 The Contours Popup This popup shows that the contours are plotted only in silicon regions because Silicon is selected on the Materials list and that the contours are drawn using the color scheme Rainbow 30 When the definition of the contour plot is finished select Apply As an exercise in zooming you can examine areas of detail in this plot SILVACO International 2 17 VWF Interactive Tools 2 5 10 Interactive Cutline Plots When a two dimensional contour plo
415. lot Print Options Destination Printer File He ame Printer Postscript Form Letter P Border Off Apply Reset Dismiss Print Si BE Figure 7 31 Print Options Popup SILVACO International 7 49 VWF Interactive Tools The items on this popup are as follows e Destination controls whether TONYPLOT is to produce a print file or send information directly to a printer If Printer is selected the data is sent straight to the queue to which the printer is attached If File is selected an intermediate text file is created whose format depends on the type of printer specified TONYPLOT selects a default file name if none is supplied e Printer is used to select a printer from the list of printers that are known to TonYPLOT By default only one printer exists More can be added with the Printer Editor discussed below The Printer Editor is also used to change the printer configurations e Form is used to select a form from the list of forms that are known to TONYPLOT By default only one form exists More can be added with the Form Editor discussed below The Form Editor is also used to change the form dimensions e Border is used to turn off the border drawn around each plot It only affects the printout borders are still drawn on the screen e Print provides a printing shortcut Rather than clicking on Apply and then selecting Print View from the Print menu click on this button to perform both ac
416. lot will be zoomed Enter the opposite corners of a rectangle and click on the Apply button to set this zoom Any previous zoom parameters will be discarded Tonyplot Zoom Start coord X 1 Y 0 04 End coord X 0 ae Apply Dismiss Figure 7 7 The Zoom Popup e Zoom out restores the plot to its normal size e Duplicate creates a new subwindow and plot and copies the data from this plot into the new one The new plot displays the same data but can be controlled separately SILVACO International 7 17 VWF Interactive Tools 7 9 3D Plot Control 3D plots can be rotated and scaled but cannot be zoomed 7 9 1 Rotation To rotate a 3D plot hold down the left mouse button and drag the pointer left and right over the plot A wire frame bounding cube will be drawn around the plot and rotates as the mouse 1s moved Position this cube to the desired viewing angle and release the mouse button The plot is redrawn from the new view point 7 9 2 Scaling To scale a 3D plot hold down the Shift key and the left mouse button and drag the pointer up and down over the plot A wire frame bounding cube is drawn around the plot and grows or shrinks as the mouse is moved Scale this cube to the desired size and release the mouse button The plot is redrawn at the new size 7 18 SILVACO International TonyPlot 7 10 Plot Display Choosing the way data is displayed in a plot is the heart of TonyPLoT Much information can
417. lows useful names to be added to the plot key The Property called Function label can be used to change how functions are labelled on the plot key All macros can be saved to a defaults file for use any time TonyPlot is used Two buttons on the popup allow defaults to be saved and loaded at any time 7 22 5 Function Syntax Functions are constructed just like normal math expressions but with names of quantities from data files used as variable names Functions can be built with the following operators a b a plus b a b a minus b a b a divided by b a b a multiplied by b a b a to the power b a negative a abs a absolute value of a log a natural log base e of a exp a inverse natural log of a e a log10 a log base 10 of a sqrt a square root of a sin a sine of a a in radians cos a cosine of a a in radians tan a tangent of a a in radians asin a arcsine of a acos a arccosine of a atan a arctangent of a sinh a hyperbolic sine of a cosh a hyperbolic cosine of a mag a b magnitude of vector a b hypot a b hypotenuese of a and b same as mag a b max a b maximum of a and b min a b minimum of a and b dydx a b derivative of a with respect to b Normal operator precedence is obeyed Expressions can use parentheses to change the operator precedence where needed If an expression contains an error this is reported when the function is plotted Invalid values are for the most part plotted as ze
418. lt Temperature Specify the temperature to be used for the simulation or use the automatic default FE Mobility Use this option to activate the field effect mobility option for the simulation Work function Enter a specific workfunction with this option or use the default value SOI Device Use this option to simulate a device with SOI layers Silicon On Insulator structure Load and Save It is possible to save the current Poisson setup options to disk for use with other TONYPLOTS Click on the Save button to store the current settings Clicking on the Load button retrieves a previously saved setup 7 48 SILVACO International TonyPlot 7 17 Printing Printing in TONYPLOT is available from the Print menu which appears on the top portion of the main window The menu contains four items outlined as follows e Print view This prints the view according to the currently chosen print parameters e Options This displays the Print Options popup which is used to alter the type of hardcopy e Printers Choosing this item causes the printer editor to be displayed The printer editor is used to add or modify the printers that TONYPLOT knows about e Forms Choosing this item causes the form editor to be displayed The form editor is used to add or modify the page layouts that TONYPLOT knows about The idea behind printing in TONYPLOT is that various levels of decision are abstracted from the user to make the us
419. ly highlighted within the deck The Editor is only invoked if a valid filename is provided Otherwise an erroris displayed 4 8 4 Starting Manager Use the Manager choice to start up the VWF INTERACTIVE TOOLS MANAGER The menu item is placed here as a convenience feature iy MaskViews Cut Files 2D masks from 2 3 12 1 to 4 8 12 2 Category v Drag amp Drop n are ple me P TE Daer MET AAMEN 75 100 125 150 135 200 225 250 obo ots 050 0 Figure 4 25 Drag and Drop from MaskViews SILVACO International 4 37 VWF Interactive Tools 4 9 History 4 9 1 Overview The History function allows moving backwards to any previous line in the input deck and restart execution It is especially useful when debugging new decks performing what if simulations and in visualizing the device at different stages in the process flow DECKBUILD maintains a set of history files saved from the simulator as the simulation progresses This permits going back to any previous step in the process by simply clicking on a line in the input deck DECKBUILD automatically re initializes the simulator with the correct history file 4 9 2 History Control You can configure how and if DECKBUILD maintains history files with the History popup Click the History Props button from the Control Pad category on the Main Control popup and the History popup appears see Figure 4 26 iy History Length 25 1 gt 100 Skip 1 1 SSS 10 In
420. manual convenient for you Is the manual s arrangement convenient for you Do you consider this manual to be easily readable Please add any additional relevant comments and fax your comments to SILVACO International Attention Technical Publications 1701 Patrick Henry Drive Building 1 Santa Clara CA 95054 You can also e mail us at support silvaco com or visit our website at http www silvaco com SILVACO International How to Read this Manual Style Conventions This represents a list of items or Bullet A terms e Bullet B e Bullet C 1 This represents a set of To open a door directions to perform an action Unlock the door by inserting the key into keyhole Turn key counter clockwise Pull out the key from the keyhole Grab the doorknob and turn clockwise and pull gt This represents a sequence of File gt Open menu options and GUI buttons to perform an action Courier This represents the commands HAPPY BIRTHDAY parameters and variables syntax New Century Schoolbook This represents the menu File Bold options and buttons in the GUI New Century Schoolbook This represents the equations Italics This represents the additional important information Note Make sure you save often while running an experiment NEW CENTURY SCHOOLBOOK This represents the names of ATHENA ATLAS EXPERT IN SMALL CAPS the SILVACO SIMUCAD AUTOMA GATEWAY HIPEX SMART TION DESIGN Products SPICE
421. mask For positive masks a positive delta bias decreases the etched hole s in the mask Misalignment shifts the entire specified mask left and right Negative misalignment values shift the mask left positive values right Shrink reduces the size of the specified layer by the ratio specified Reverse specifies that the mask polarity should be reversed or that negative type photoresist should be modeled 4 68 SILVACO International DeckBuild Optolith specifies that the loaded MASKVIEWS cutline is from an Optolith layout Therefore Optolith syntax layout commands is used to define the photoresist pattern Examples The delta value can be used to vary the Critical Dimension CD of the specified layer The value operates on as edge by edge basis For example for an IC layout with a 1 0 micron wide poly the statement mask name poly delta 0 1 creates a drawn poly length of 0 8 microns meaning that 0 1 have been removed from each poly edge The bias command option performs the same operation as the delta command This can be used globally to edit the bias of each layer The bias command can be used with delta such that the real value for CD reduction is the sum of the delta and bias values per edge For example if an IC layout with 1 2 micron CD s is streamed in from GDS2 and the final etch then the final etch profile is known to be 0 9 microns due to a combination of biasing photo exposure and over etch then the offs
422. mask information is required The abbreviated layer name should be one of the names shown on MASKVIEWS key panel At runtime DECKBUILD replaces this line with deposit photoresist thickness value or with the line deposit barrier thickness value The material type and thickness written are those defined in the Layers popup The deposit statement is then followed by a series of etch statements A region to be etched is any area not containing a polygon mask on a clear field layer or any area containing a mask on a dark field layer The etch statements will appear similar to etch photoresist start x start of region y 20 0 etch continue x end of region y 20 0 etch continue x end of region y 20 0 etch done x start of region y 20 0 If the statement mask abbreviated layer name reverse is found in the deck then the effect of the field attribute is reversed If you disable write to deck an information file for use with DECKBUILD will be written after selecting both points on the layout A summary mask display will appear if you set the Display masks property You can load the cutline directly into DECKBUILD by dragging the icon displayed in the top corner of the summary See Section 10 8 5 Drag and Drop for more information An information message will appear indicating the name of the output file written 10 14 SILVACO International MaskViews Grid Definition MASKVIEWS also controls the initial grid
423. may not appear in the tree TonyPlot3D Object Editor PT Figure 8 14 Object Editor 8 20 SILVACO International TonyPlot3D Table 8 8 lists and describes each part of the hierarchy Table 8 8 Object Hierarchy Structure This is the top level object within TONYPLOT3D s display This is everything that appears in the Main Window Note Only one scene is currently supported Scene This is the main structure object It is the parent object that contains all of the materials and regions Note Currently only one structure per scene is supported Structure se Material Each structure is broken up into a number of different mate rials e g silicon polysilicon and so on Each material is then broken into a number of distinct regions This is the lowest level object displayed 1n the object dialog Region Electrode Identifies the electrode settings Ray Traces Displays the ray trace settings Ray Trace Displays the setting of an individual ray trace Vector Sets Displays the properties of the vector sets Vector Set Displays the individual vector set Isosurfaces Displays the properties of the isosurfaces Isosurface Displays the properties of the individual 1sosurface Cl SILVACO International 8 21 VWF Interactive Tools Table 8 8 Object Hierarchy Structure Conesa Mens the coordinate systems axis Displays the Title properties for viewing and modifying Displays th
424. mber of approximations can be made to improve the meshability of the structure Most structures can be conditioned by clicking on the Apply button this should be the first option Boundary Conditioning attempts to get rid of points that are not critical Boundary Conditioning falls under the following categories e Any points on a straight line not contributing to the geometry of the structure are eliminated e A geometrical rounding error can be supplied with a default limit of 0 001 micron Care are should be taken in view of this critical layer thicknesses when using this option i e gate oxides This option 1s controlled with the rounding unit text field on the boundary conditioning control screen e A line straightening algorithm is available The option straightens a line if it bends by only a small amount defined as an angle in the line straightening text field e Meshbuild essentially refines a basic coarse tensor product mesh The spacing of this base mesh can be controlled Two options for the X and the Y directions are available to do this on the boundary conditioning control screen 9 9 4 Mesh Constraints Mesh constraints allow you to require specifications be met in the mesh While mesh parameters are guidelines for the meshing algorithm mesh constraints are requirements that must be met see Maximum Mesh Angle for exception There are two major parts in defining mesh constraints the effected area and the constraints bein
425. me Add value Target value Optimized value i Delete E 5 Toggle HEBSEEW Insert Select 4ll MB i Select All linear Normalize X linear linear linear linear Figure 6 19 Deleting a Curved Target 6 4 3 Editing A Target The Target worksheet allows direct edit of numeric cell values such as X value Target value and Weight See Target Fields on page 6 19 below for an explanation of the fields Editing Numeric Values To edit a numeric cell value 1 Position the pointer over the cell The cell then appears indented 2 Click SELECT once A text caret appears in the cell 3 Edit the cell value The worksheet understands normal keyboard input plus Control U which erases the cell contents Enter the new value 4 Finish the edit by pressing the Return key The new value remains in the worksheet cell If the cell is read only and cannot be edited a warning message is displayed in the lower left hand corner of the worksheet See Section 6 8 Worksheet Editing for more information about using the worksheet Editing the Target Type Target type is either linear or log Set the response type to log if the target value is extremely small to reduce the target s apparent error For extremely small targets a very small absolute difference between the target and the extracted data could result in an extremely large percentage error le 12 vs le 11 is a 900 error Setting target type to log tells the OPTIMI
426. me consuming to simulate such as two dimensional diffusions or Monte Carlo based calculations The init button also works with structure files that you saved To initialize on a named Standard Structure file select the name of the saved structure file in the text edit window Figure 2 11 shows the file vtadjust str selected in the text edit window Hut adjust implant implant boron dose 9 5e11 energy 10 pearson Now save an SSF file sructure autfile H next line stop cl cont run paste 1 init pause Lo clear restart ATHENA struct nutfiles historyid str ATHENA Figure 2 11 Selecting a Structure File in Deckbuild Selecting the init button re initializes the simulator to the point where the selected file was saved The current point of execution in the input file is set to the point directly after the statement that saved the selected file The line init nftrilesevtediugst sbf which appears in the tty region is the command executed when the init button is selected 2 5 5 Comparing Structure Files You can use TONYPLOT to compare two structures from different points in the process flow To illustrate this compare the structures that resulted just before and just after the Vt adjust implant step To perform this comparison first generate a structure file for each structure Then modify the input deck to generate the necessary structure files and use the history mechanism to initialize to a point just
427. ment to 0 5 4 16 13 SOURCE Enables simulation commands to be executed from an external file Syntax SOURCE file Description The SOURCE statement enables simulation commands to be executed from an external file The named file is read and placed in DECKBUILD s input buffer and is executed as if it were part of the input deck file is the name of a file that contains any valid simulator syntax or DECKBUILD statements such as extract and set The sourced file may source other files If the file name does not begin with then it is assumed to be in the current directory Examples The file to be sourced may contain part of an input deck including commands from any simulator The following input deck fragment will perform a diffusion access the file include file for further commands then revert back to the deposition step etch oxide all 3 Source an external file Return to the input deck implant bf2 dose 1 0e12 energy 35 pearson 4 72 SILVACO International include file contains these statements gate oxide grown here diffus time 10 temp 900 dryo2 press 1 00 hcl 3 ATHENA etch oxide all ATHENA ATHENA Source an external file ATHENA gt ATHENA gt Source include file gate oxide grown here The runtime output from this fragment will appear as ATHENA gt diffus time 10 temp 900 dryo2 press 1 00 hcl 3 Solving time sec O 0 01 100 np 106 Solving time sec BECK eho yer 739 079
428. mentSize N to the Xdefaults file where N is the number of bytes allowed before textedit saves the file 2000 by default Try using N set to 20000 4 18 2 TTY Subwindow Error Messages The tty subwindow like the text subwindow has a limit on how big it can grow before an error occurs In rare circumstances it is possible to overflow the tty subwindow But it takes a great deal of simulation output to do it many thousands of lines If an error message such as pty insertion failed appears either clear the contents of the tty subwindow or turn scrolling off because the log is only saved if scrolling is turned on If this error comes up repeatedly the best solution is to disable scrolling Disable scrolling by invoking the tty menu in the tty subwindow and selecting Disable Scrolling SILVACO International 4 77 VWF Interactive Tools 4 78 SILVACO International Chapter 5 DeckBuild Extract 5 1 Overview DECKBUILD has a built in extraction language that allows measurement of physical and electrical properties in a simulated device The result of all extract expressions is either a single value such as Xj for process or Vt for device or a two dimensional curve such as concentration versus depth for process or gate voltage versus drain current for device EXTRACT forms a function calculator that allows you to combine and manipulate values or entire curves quickly and easily You can create your own customized ex
429. meter define State ment diffuse line 78 Wi time lt yvariable gt temp lt variable gt press lt wariable gt LCS L1 Title Diffuse Apply method fermi comp diffuse time 5 temp 3 0 nitro press 1 0 Figure 6 5 Parameter Define Popup 4 Check the checkboxes next to the desired parameter s by clicking SELECT next to their names You can also type in a title The parameter name on the worksheet are formed by appending the individual parameter names shown next to the checkboxes with the title When you select all the desired parameters click on Apply A new row is inserted into the Parameter worksheet for each selected parameter on the popup Figure 6 6 The rows are always arranged by line number SILVACO International VWF Interactive Tools d iy Deckbuild Optimizer optex02 in o pt edited Line number Parameter name ls SEIEEER Initial value SE type value value Vt adjust implant dase 3 5e 10 El IS Vt adjust implant energy linear Length etch p1 x linear SD implant dose J SD implant energy linear Diffuse time linear Parameter define State ment diffuse line 78 Wi time lt variable gt temp lt variable gt press lt wariable gt DEL 1 Title Diffuse L method fermi comp Apply diffuse time 5 temp 3900 nitro press 1 0 Figure 6 6 Parameters Added to Worksheet Repeat the process to define parameters on the other lines in the input deck Afte
430. mic the log10 is taken before the mapping occurs Figure 8 6 shows an example of logarithmic mapping for the Donor Concentration The default mapping is chosen by TONYPLOT3D but can be overridden by using the Fix button yPlot3D 3 0 14 R ATLAS Data from mos2ex04 2 str Donor Conc cm3 28 D1 i 28 01 1e 01 Figure 8 7 Contours in a plot SILVACO International 8 13 VWE Interactive Tools 8 4 3 Rays The Ray Display Mode shows a list of all the rays contained in a structure file When highlighted in the list and after pressing the Apply button the rays are going are drawn in the Plot Area The Ray Settings Group Box controls the way the rays are displayed The rays can be displayed as lines or as cylinders When drawn as lines use the Line Width Pull Down menu to change the thickness of the rays When drawn as cylinders use the Cylinder Radius Slider to change the relative size of the cylinder s radius Use the CTRL key to select multiple rays in the list Figure 8 9 shows an example of rays displayed as lines TonyPlot3D Display Modes Ray Trace 1 Wave Length 0 55 Figure 8 8 Ray Trace Display Mode 8 14 SILVACO International TonyPlot3D TonyPl ES Data from raytraces str Hatenals Conductor Silicon ES Figure 8 9 Example of rays in a plot SILVACO International 8 15 VW F Interactive Tools 8 4 4 Isosurface The Isosurface Display Mode is used to show surfaces
431. must supply param1 or param2 or both PARAM param repeated one or more times PARAM param repeated zero or more times Examples In the following example paraml or param3 must be supplied If and only if param is supplied an optional param2 can be supplied In any case at least one param4 must be supplied card paraml lt n gt param2 lt c gt param3 param4 lt n gt Line Continuation Cards can be continued across multiple lines by ending the line with a backslash In this case the next line is considered part of the same line Note When loading a command file lines can also be continued by starting the next line with a plus sign This function has been depreciated and is only supplied for backwards compatibility and can be removed in future versions SILVACO International 9 59 VWF Interactive Tools Comments Comments can be placed at the end of any card or on lines by them selves Comments start with a number sign 47 and end at the end of the line regardless whether or not the line ends with a backslash 1 Depreciated function lines starting with are also considered comments This is for backwards compatibility and can be removed in future releases Parameter Section In the parameter section for each card each paragraph starts with a parameter s full name and value type Following this there can be a list of alternate parameter names This list is contained in parenthesis Any length abb
432. n If for some reason the OPTIMIZER cannot achieve convergence it stops and display the error condition In practice several parameters are measured and the simulation is then tuned to those values For example MOS structure gate oxide thickness Vt curves I V curves and a SIMS profile can all be used to tune the input deck with the OPTIMIZER The OPTIMIZER is controlled through an easy to use graphical worksheet The worksheet allows you to enter and edit input parameters targets and setup information such as error tolerance used by the OPTIMIZER There is also a real time graphical results display that visualizes input parameter values target values and error terms so you can easily track the OPTIMIZER s iterations 6 1 1 Features The OPTIMIZER eliminates guesswork by determining the input parameter values necessary to match one or more targets quickly and accurately Furthermore since the OPTIMIZER is built on top of DECKBUILD s native auto interfacing capability parameters in one simulator can be optimized against the extracted results from a different simulator For example optimizing can be against a Vt measurement and an I V curve simulated in ATLAS using process input parameters in SSUPREMS or ATHENAor both The OPTIMIZER is most useful for tuning studies Use it to calibrate extracted simulation results to measured data by changing coefficients such as diffusion and segregation rather than trying to vary settings suc
433. n UltraSPARC and SPARC based models with True Color frame buffers and an X server You can use xdpyinfo to obtain information about the X server on your machine To run TONYPLOT3D without graphics acceleration use the nohw command line option The hardware renderer requires a True Color graphics adaptor that supports OpenGL API version 1 1 De UltraSPARC and SPARC based systems using the TCX SX GX ZX PGX PGX24 PGX32 Creator Creator3D Elite3D or Expert3D Expert3D Lite framebuffer Memory TONYPLOT3D requires a minimum of 128Mbytes of real memory To improve performance however more memory such as 256Mbytes or even 512Mbytes is strongly recommended To see how much memory your system has use the command usr sbinyprtcoeont Memory size is printed within the first few lines of output OpenGL Library TONYPLOTSD is designed to work with OpenGL API version 1 1 or higher Try the following web site for information on obtaining OpenGL drivers for your graphics hardware http www sun com software graphics opengl or contact the Techincal Support for your Operating System 8 7 2 HP 9000 7xx Workstations Workstation Models TONYPLOT3D executes on any of the HP 9000 7xx series workstations that support HPUX 11 0 Operating System TONYPLOT3D for HP platforms requires the HPUX 11 0 operating system The command uname r shows the current revision of the HPUX operating system running on your workstation 8 40 SILVACO Internat
434. n a structure each of which has an identifier You can delete each ruler separately or all at once Use the Tick Step box if you want to change the number of ticks increment marks on the ruler You can snap the ruler to existing vertices in the structure by using the Snap Ruler switch The closer vertex on the selected face is chosen instead of an interpolation of a position in the face with the interpolation of the quantities as well SILVACO International 8 33 VWE Interactive Tools 8 6 Properties 8 6 1 Camera The Camera Tab is shown in Figure 8 23 The Camera function controls the actual camera used to view the data TonyPlot3D Properties Figure 8 23 Camera Tab Projection This option controls whether or not the camera projects a perspective or parallel view The angle of the projection can be changed when prespective is used Scaling This option effectively multiplies the coordinates of the structure to be viewed You can set each axis that you wish to scale Depth Cue Use this option to add more depth realism to the plot Objects that are further away appear slightly dimmer than those that are closer You can apply this option to the entire structure or just to the wireframe 8 34 SILVACO International TonyPlot3D 8 6 2 Color This tab Figure 8 24 can be used to adjust the colors of the various components of a structure TonyPlot3D Properties Ces mm SS Figure 8 24
435. n definition by pressing the Shift key down The Shift key over rides the current action so the left mouse button will always control a zoom in function while the Shift key is held down Region definition can continue once the Shift key is released 9 34 SILVACO International DevEdit 9 6 EDITING REGIONS 9 6 1 Adding a Region The Add Region mode is invoked by selecting Add from the Regions menu Having done this the right side of the DEVEDIT Base Window changes to show the Add Region control panel The Add mode can be selected at the top of the Add Region panel Two options exist and determine the way regions are added to an existing structure The Add Only option adds a region without recessing into an existing region In this mode the existing regions take precedence over the new region being added The Etch then Add option recesses a new region into an existing region The new region being added takes precedence over the existing regions Note A section can be etched away or deleted by creating a new region using the Etch then Add mode and deleting the whole region after defining it 9 6 2 Selecting Region Material A region s material should be selected before or during the process of region definition Although Silicon is the default material other materials can be selected from the Material menu on the Add Region panel A large number of materials are currently available on the Material menu and more materials can be provided b
436. n in the scrolling list below The first item in the list of files is always Go up a level which moves to the parent of the current directory Double clicking on this line moves up a level To change to a subdirectory double click on its name and TONYPLOT moves down a level It is also possible to type in a path name into the text field labeled Path and press the Return key to immediately change the directory 7 4 3 File Filtering A filter is used for screening irrelevant files and defaults to to show the types of files normally produced by Silvaco simulators and other tools such as the VWF This filter can be changed in the Filter text field if needed When the Return key is pressed the list is updated to show files not masked by the new filter The default file filter can be set from the Miscellaneous category of the Properties popup described later Note Loading files by entering the name into the Filename field will still load the file even if the filter prevents it from showing up in the scrolling list 7 4 4 File Options Clicking on the MENU button while the pointer is over the list of files displays the File Loader Options menu This menu has options that allow directories and hidden dot files to be shown or not shown and also provides three criteria for sorting the files in the list by name alphabetical by date newest files first and by size largest files first 7 12 SILVACO International TonyPlot
437. n is displayed you can click on it with the right mouse button in the drawing window For example to define a rectangular region click the left mouse button four times in the screen at the vertices required to make up the rectangle then the right mouse button to finish the polygon Selections from the right side control area can be made at any time An example of this operation is shown in Figure 9 29 where two regions have been defined with a third region partially defined After clicking on Apply each region added to the screen 1s listed as a material and as a number on the scrolling list in the region screen Regions can be selected by clicking left on an entry in the scrolling list A selected region is surrounded by a red outline in the main edit window DevEdit 2 3 2 4 example de modified File gt Regions sei Impurities ci Mesh Help 7 Add Region Add Mode Etch then Add Add Only Diagonal Lines Allowed Disallowed Name optional Electrode Electrode names r Material Silicon Color Pattern HE T New Polygon Done Polygon 1 Points x Y Kl Polvqon 1 2 0000 0 0000 1 7000 a 0000 1 7000 0 2000 2 0000 0 2000 X 2 0000 Microns Add Insert vy 0 2000 Microns Replace Delete Apply Cancel Copyright i 1996 sILVACO International Inc Ji Figure 9 29 Drawing a Region 9 36 SILVACO International DevEdit Regions can also be made from multiple polygons For
438. national 1995 2 Figure 2 6 The Doping Profile These results are displayed in 1 D when ATHENA is a 2 1 process simulator The reason is that ATHENA performs calculations in 1 D until an instruction causes the structure to become non planar From this point on it uses the full 2 D mode This automatic mode switching saves CPU time TONYPLOT automatically detects when a structure is the result of calculations performed in 1 D mode and it displays the results accordingly Modifying The Appearance Of The Plot You can use the buttons along the top of the TONYPLOT window control to change the appearance of the plots that are generated To start modifying the present plot select the Display item of the Plot menu see Figure 2 7 SILVACO International 2 9 VWF Interactive Tools M Display Annotation Labels Level names Set ZOOM Zoom out Duplicate Figure 2 7 The Plot Menu This causes the Display window shown in Figure 2 8 to appear Tonyplot Display Cross Section Phosphorus Active Phos Vacancies Interstitials Traps Potential proc Apply Reset Dismiss Functions Figure 2 8 Display Cross Section Window This window contains several options that control the appearance of the graph including e Which quantities are plotted The available options are displayed in a scrolling list To plot a particular quantity simply select 1t from the list The Phosphorus species is s
439. nd 180 is towards negative X e Slope The gradient of the ruler line 1 40 SILVACO International TonyPlot e Inv Slope The inverse gradient 1 slope Type Two types of ruler are available The default ruler is called a temporary ruler because once the mouse button is released the lines are removed from the plot but the values remain displayed in the Tool popup A permanent ruler however remains in the plot the temporary ruler lines are drawn in the plot window and some of the values from the popup are also added at relevant places This permanent ruler remains on the plot until the ruler 1s placed once more Switching the ruler type back to temporary also removes a permanent ruler To return to normal use of the plot window the Ruler popup must be dismissed 7 16 3 Probe The Probe tool can be used to look at structure information in a 2D Mesh This can be useful for debugging simulator output as well as for general use To use the Probe select one or more 2D Mesh plots and choose Probe from the main Tools menu Click anywhere within a structure to activate the probe A crosshair marker indicated the last position clicked Measurements are then displayed in the Probe popup shown in Figure 7 25 Tonyplot Probe ep X 0 1553 v 0 249 Donor Cone vwl 1e 1b vz 1 amp 8 15 vi le 16 Acceptor Conc wi 0 ywe l va Potential Wi 0 347605 yves0 347605 yar 44 605 E Field amp v1 2 4295 a8 08
440. nd on the mode currently selected In the Interactive mode for example it shows the current Process Name if any and a row of four buttons for control of the input sliders The input sliders appear on the next panel down Each input parameter in use is represented as a slider toggle combination Inputs can be selected by pressing the toggle it is grayed out when not activated The popup can show up to twenty four inputs The popup can be expanded or reduced to show more or fewer sliders with the plus and minus buttons found in the lower right corner TONYPLOT tries to size the popup so that all inputs are shown and unused sliders are hidden 7 86 SILVACO International TonyPlot At the bottom of the popup are the usual Reset and Dismiss buttons and also a Define menu button This allows access to some set up popups which will be explained later 7 26 4 Interactive RSM Control The Interactive mode is the basic use for the Production popup When set to this mode the mode control panel shows the current Process Name This name can be changed if needed Under the process name are four buttons that control the input parameter sliders e Reset to nominal Clicking on this button sets all slider positions to the nominal value for each input The nominal value is defined by the RSMs but can be changed to any other value with the Input Parameter Ranges popup described later or with the next button e Store a
441. nd prismatic mesh generation combining two structures into a single device stretching and cutting and circular device creation Beginning users can find examples in DECKBUILD EXAMPLES of DEVEDIT in batch mode Questions are also be entertained by Silvaco s Applications Engineers SILVACO International 9 33 VWF Interactive Tools 9 5 STRUCTURE EDITING 9 5 1 Overview This section describes the general editing functions that are available in DEVEDIT DEVEDIT stores a history of all events that have taken place under DEVEDIT control These events are stored internally and can be written to a Command file see Section 9 10 6 Saving the Silvaco Standard Structure File Zooming The Zoom function is completed by holding the left mouse button down and dragging over the desired zoom area In the event of needing to zoom in half way through object definition when the mouse button can not be held down holding the Shift key down overrides any editing actions and zooms in Zooming out is accomplished by double clicking This action zooms out by a factor of four times Panning Panning over a structure is accomplished by moving the scroll bars situated initially at the top right and bottom left of the editing screen Holding the left mouse button down while selecting either end of the scroll button moves the displayed structure to the left and right and up or down A single click on the scroll bar end stops and pans all the way across the
442. nd unpaused One of DECKBUILD s unique features is the History function see Section 4 9 History DECKBUILD remembers each line of the deck as it is executed and saves a structure file after each one As a result if a problem is discovered it is unnecessary to re do the entire deck from the start For example if after running part way down an input deck and you discover a missing statement or an erroneous value you only need to point and click on the line from which to start and click on Init from History DECKBUILD automatically re loads the saved history file and allows the simulation to continue from that point DECKBUILD also allows plotting the current structure At any point in the deck click a button and DECKBUILD automatically causes the simulator to save a structure file then start up SILVACO s post processing tool using the saved structure as input This is often useful in conjunction with History to aid in fast tuning of a section of input deck A statement can also be changed then re executed and the change is immediately visualized Examples and Tutorial DECKBUILD provides full on line examples that can be loaded up at the press of a button These examples provide input decks for actual devices and help when learning about DECKBUILD Chapter 2 Tutorial is a tutorial that explains how to use DECKBUILD to perform a simple simulation Advanced Topics Generic Decks Most decks have built in geometric constants
443. nderstanding of subsequent material e Structure A structure is that set of data contained within a structure file doping geometry bias points etc One structure usually requires one plot but sometimes two The same structure can be repeated in many plots e Plot A plot is one drawing A plot can be of one or more structures but can never exist without a structure Several plots can show the same structure which allows the data to be simultaneously examined from two different angles TONYPLOT is capable of displaying three kinds of plots each with its own distinct properties 2d Mesh plots Graph plots and Cross Section plots e Selected Plot Not all plots need be operated on at once A subset of plots is defined by selecting required plots Selected plots are indicated by bolded borders unselected plots have dull borders e View The view is the collection of plots in the main window It is a global term and refers to all plots selected or not e Subwindow A subwindow is the area onto which a plot is rendered Each plot has a unique subwindow and each subwindow can show only one plot You can modify the arrangement of subwindows within the view e Display Each plot has a display setting which is the set of parameters that defines how the structures represented in the plot are to be drawn 7 1 4 Standard Controls Throughout the use of TONYPLOT standard controls Figure 7 1 are often referenced and in each case p
444. needs to be edited All other elements on the screen are then re drawn in a dimmer color and the key buttons and sliders are updated with the mask element s phase and transmittance attribute values You can alter the values for the selected mask by moving the sliders or selecting a new value from the key buttons Once you set the correct value you can resume normal editing mode by selecting Edit gt Mask then clicking on an empty space on the layout area Phase Display Mode The layout screen displays masks from one level only The key panel shows phase shift values for each mask on this level The current default phase shift value used for editing is set by selecting an item in the key or by adjusting the phase value slider below it Transmittance Display Mode This mode is similar to the phases mode except the key and the display Figure 10 5 shows mask transmittance values Serifs If serifs have been applied to a polygon they alter the mask image for that polygon when it is written to the file Serifs added to convex vertices 1 e outside corners add their area to the shape of the polygon while serifs added to concave 1 e inside corners vertices subtract their area SILVACO International 10 17 VWF Interactive Tools 10 6 Files 10 6 1 Loading and Saving Files All of the data stored in MASKVIEWS can be saved or loaded File loading and saving is provided through use of a standard File Loader popup Figure 10 11 iy Mask
445. nes whether the minimum contour is displayed as transparent or not e Default file filter Use this to specify the filter used on the Load structure popup SILVACO International 7 67 VWE Interactive Tools 7 19 14 Materials 7 68 The colors used by TONYPLOT to represent the different types of materials can be altered To change the colors select Properties Materials not from the Properties popup This will open a popup The items on this popup are e Name list The scrolling list shows a list of all material names known to TONYPLOT e Name This is the name of the selected material This cannot be changed e Color A palette shows the color currently used for the selected material Any color can be chosen if the default is not acceptable e Off On key Sometimes it may be desirable not to show a certain material on a material key legend If this is the case choose the Off key from this item SILVACO International TonyPlot 7 19 15 Functions The Functions popup Figure 7 41 can be accessed from the main Properties menu but not from the Properties popup This function and its use to construct custom made expressions is described in the Functions section Tonyplot Functions Figure 7 41 Functions Popup SILVACO International 7 69 VWF Interactive Tools 7 20 Key Legends 7 20 1 Overview Data is of little use without a key to explain its meaning TONYPLOT uses keys in a variety of situations
446. ng input decks in DECKBUILD is via popup windows DECKBUILD s text subwindow supports a full featured text editor that allows editing decks directly It is not necessary to know any special editing commands because they are available from the main window header menus Command menus are accessed via the File View Edit and Find menu buttons and also by clicking MENU with the pointer anywhere in the text subwindow 4 4 3 Using the Text Subwindow Creating A New File To store a new file move the pointer to the File menu button and click and hold the MENU mouse button Move the pointer to the Save as menu item and release the MENU button A Save As popup are displayed showing a list of directories and files in the current working directory Figure 4 8 To move between directories either modify the Directory field and press RETURN or double click on the required directory in the list To save the required file either highlight 1t in the list and select the Save button double click on the required file or enter a new file name in the File field and select the Save button Note Saving a file to a new directory moves DECKBUILDSS current working directory to that location SILVACO International 4 15 VWF Interactive Tools ie Save As Directory 4 marting work test deckbuild Filter in 4 go up a level Ol sflm 3 1dvt2 in 3 amex10 in 3 amex11 in 3 andy in Nonelex 8 n i Ld anexo2 in
447. ng mesh construction In this section you can control the maximum triangle ratio the maximum and minimum height and width either throughout the device or selectively in given regions in material types or underneath regions or materials It is important to avoid obtuse triangles in the semiconductor however obtuse triangles in the poly gate oxide and metal regions are acceptable A logical method would be to allow obtuse triangles in all regions but then override the semiconductor regions to only include acute and right triangles Begin with selecting All Regions in the Material Types and Regions box For Max Angle either enter or move the slide bar to 150 Next select Semiconductor Regions then click on the box next to Max Angle and set the value to 90 After re building the Mesh you can observe that the number of mesh points have decreased This has been done without adding obtuse triangles to the semiconductor yet relaxing the mesh in areas that are not of interest Further constraints can be imposed in the semiconductor regions Set the Max Height to 0 1 all units of distance are microns Similarly set the Max Width to 0 1 These values are valid for the mesh creation in all semiconductor regions As mentioned previously the mesh in insulators and electrodes are unimportant so it is acceptable to leave the mesh arbitrarily large in these regions By clicking on Meshbuild again you will notice that the mesh in the semiconductor
448. nge 1e15 1e19 13 The file save sdb will have no data the file save spayn will be fine Once a file is active it will remain active until a subsequent save command makes a different file active or until an endsave command is given A file however will only have data from one experiment Warning f you have more than one experiment line in a deck be very careful with the save command or you will lose data For example the following is the wrong way Sweep parameter doping type power range 1e15 1e19 13 save type sdb outfile one sdb Sweep parameter doping type linear range lel6 lel7 11 save type sdb outfile two sdb This will perform the first experiment then save that experiment to one sdb then perform the second experiment But because one sdb is still the active file DBINTERNAL will write the data from the second experiment to one sdb destroying the data that was already there At the end of this run both one sdb and two sdb will contain the same data In this case you must use the endsave command to tell DBINTERNAL to deactivate the active file Example Sweep parameter doping type power range 1e15 1e19 13 save type sdb outfile one sdb endsave Sweep parameter doping type linear range lel6 lel7 11 save type sdb outfile two sdb B 5 8 sweep Syntax Sweep parameter lt paraml gt type sweep type range start stop num parameter lt param2 gt type sweep type data point list Description The sweep comman
449. nge each time thereafter You can use the level clause to have the value of the variable change when a particular member of a set of nested loops begins a new iteration If the level you specify is positive the loop is obtained by counting downwards from the zero level the one outside of all loops If the level is negative the loop is obtained by counting upwards from the current level towards the outermost loop So 1evel 2 means change when the loop two above the present one starts a new iteration level 2 means change when the next to the outermost loop begins a new iteration As already mentioned user defined variables will be substituted before attempting expression evaluation These variables are defined using the SET and ASSIGN statements You can indicate the presence of a user defined variable by prefixing it with or or by surrounding it with braces like this S my variable 1j QG my variable 2 Variables embedded withing quoted strings will be correctly substituted Bare variables will be recognized provided they are surrounded by both spaces and parentheses This usage however is very confusing and highly inadvisable Examples 1 In this example parami1 will take the values 1 2 and 3 on the three passes through the loop loop steps 3 assign name paraml print n value 1 delta 1 l end 2 This generates the sequence aa 20 aa 16 aa 12 aa 08 aa 04 and aa 00 for param2 loop steps 6 print assign name param2 c value
450. nochrome Operation All MASKVIEWS features are available in monochrome mode This is selected automatically for systems not supporting enough colors or by using the mono command line switch Differences that are seen are that all key values displayed and listed are in terms of pattern fills instead of colored regions When you select a mask for editing 1n Phases or Transmittances mode all other masks will appear as outlines only instead of dimmer color 10 28 SILVACO International Appendix A Models and Algorithms A 1 Introduction Models and Algorithms used by one dimensional 1D electrical solvers in DECKBUILD and TONYPLOT Note This appendix is intended to serve as a quick reference only A detailed description of the semiconductor device physical models is provided in the ATLAS manual 1D electrical solvers available by using the ext ract command in DECKBUILD or in TONYPLOT are based on the iterative solution of the Poisson equation div eVy alp n NH NA pp A 1 where y is the potential is the dielectrical permittivity n and p are the electron and hole concentrations and p F is the fixed charge QUICKBIP uses the continuity equations to calculate n and p TIU E eg A 2 q n n 1 2 divJ U 0 A 3 q P P where SS Q SCH qu E nt qD Vn A 4 CQ E D A d qub ptqD Vp 5 kT kT D D A 6 n d Fw P q Pp A 1 1 Physical Models All electrical solvers take into account the following mo
451. ns information about error messages that may be encountered while using the text and tty subwindows SILVACO International 4 19 VWF Interactive Tools 4 4 5 Main Control The Main Control popup Figure 4 10 provides a collection of controls organized by category that allows customizing of DECKBUILD s configuration The Main Control popup with the Category menu displayed is shown in Figure 4 9 The Category menu contains the following control category selections e Control Pad Simulator choice activation and runtime options Options User configurable option settings e Messages DECKBUILD debugging control Formatting Input deck operation formatting e Arguments Command line arguments for other VWF INTERACTIVE TOOLS Choose a category by clicking on MENU with the pointer over Category Move the pointer over the category of interest then release the MENU button When you select a new category the popup changes from the old category to the new Old controls disappear new ones appear and the popup may change its size Each category contains a Save as defaults button Click on the button to save the settings in that category DECKBUILD configures itself with the saved settings the next time it is invoked 5 1 Control Pad The Control Pad provides one stop service for the highest level of DECKBUILD configuration and runtime control Choose the currently configured simulator auto interface opti
452. nt donor concentration from 10e9 to 10e8 is not considered when the Transition value is set to 10e10 the default SILVACO International 9 15 VWE Interactive Tools Figure 9 10 Mesh Refinement on the Donor Gradient Mesh Constraints The Mesh Constraints section is the principal area for controlling mesh construction In this section you can control the maximum triangle ratio the maximum and minimum height and width either throughout the device or selectively in given regions in material types or underneath regions or materials Begin with selecting Semiconductor Regions in the Material Types and Regions box Click on the box next to Max Height and set the value either by typing or moving the slide bar to 0 05 all units of distance are microns Similarly set the Max Width to 0 25 These values are valid for the mesh creation in all semiconductor regions As mentioned previously the mesh in insulators and electrodes are unimportant so it is acceptable to leave the mesh arbitrarily large in these regions By clicking on MeshBuild again you will notice the mesh in the semiconductor regions now adheres to these criteria 9 16 SILVACO International DevEdit Mesh Constraints Material Types and Regions All Regions semiconductor Regions Insulator Regions Metal Regions 1 AlGaAs i N 2 tcaaAs a 3 GaAs 3 4 ncaas Y Max Height 0 0500 0 0001 100000 wi Max Width 0 250
453. nt structure e Zoom to Region Permits selection of a region on the Regions list as full view on main panel e Full View Selects full view of work area entire device 9 2 4 Control Windows During the process of DEVEDIT operation a number of auxiliary panes can stack up obscuring the Main panel To regain access to the Main panel sequentially remove the auxiliary panes by choosing the Cancel Done or Apply button as appropriate for each panel 9 4 SILVACO International DevEdit 9 3 FILE CONTROL 9 3 1 Using Devedit Using DEVEDIT is largely intuitive As a starting point a screen appears displaying a space where you can edit a device Menus and options appear on the right hand side of the screen They are selected from the Main Menu button options along the top of the main screen Each action may change the control panel on the right side of the main screen Select the required menu options from the series of buttons and menus and press Apply or Done on the control panel when complete 9 3 2 Loading a Silvaco Standard Structure File A Silvaco Standard Structure file can be loaded at any time into DEVEDIT A Silvaco Standard Structure File may have been created by any 2 D simulator A Silvaco standard structure can be loaded from the time DEVEDIT was invoked see Invoking DEVEDIT from the UNIX prompt or by using the File menu Under the File menu button on the left side of the DEVEDIT screen a number of menu options allo
454. ny number of separate ATLAS device tests Figure 4 1 shows a schematic of this flow The entire result is saved as a single input deck Notice how process simulation is treated as a serial flow of events while device simulations are treated as parallel This is because of the way in which auto interfacing works At the conclusion of each process run the simulation results are saved and are used by the next process simulator several process decks form a serially linked chain Device tests always use the last available process result Auto interfacing is one of the most powerful features in DECKBUILD 83 ATHENA ATHENA PROCESS SEQUENCE D ATHENA D ATHENA 1 C C SIMULATION C C C ATHENA DEVICE AT AT AT AT AT AT SIMULATION TESTS Figure 4 1 DeckBuild Schematic SILVACO International DeckBuild Execution Control DECKBUILD provides a diverse set of controls over the running simulation You can run the entire deck You can run it one line at a time You can run the deck until a predefined line is reached or halted immediately after the current command You can even set multiple break points in the deck by using the String Monitor option and by adding a specific comment to search for at the required locations While the simulation is running DECKBUILD also highlights the currently executing line in the input deck The simulator itself can be stopped started quit killed paused a
455. nyPlot ei le KEE 8 2 Display MOJOS tetra 8 9 WAU AIR SU RETE TOR T a 8 3 Operating Rue 8 40 28 oH 6 ME ee EE 8 7 A a 8 34 SABIO ee 8 2 A A 8 20 TonyPlot3D Properties CAM ME 8 34 KE 8 35 A O 8 35 Biet ME 8 36 Bil 8 37 Main WINdOW EE 7 58 Ve EE 8 38 e e EE 8 39 SUCESOS oie dla eta di 7 62 TOO SONS ricas 7 59 See also TonyPlot3D Tools CUE e a 7 38 GUNS ta DEEST 8 26 HR 45 EMO iris 7 43 Joelle NEE 7 44 A A tantnm ados 4 37 MASVIEWS hue EE 4 34 Ve 7 42 KEE 8 20 Beie DEEN 7 47 ls A A A to ths So 7 41 8 30 RUM RE E ET 7 40 8 32 Jee 4 37 TonyPlot See also TonyPlot sessessssss 4 33 EE ee 7 46 See also DeckBuild Manager MaskViews TonyPlot and TonyPlot3D TPCS mitica Mer ETE 7 72 FUNCION MICE P erc 7 79 MA ee 7 72 A O O N 7 46 STEEN 7 47 TTY Subwindow Gut Paste and CODI dee Ee 4 18 A 4 18 Entering Commands 5 5 3 e doi 4 18 Error Messages inserta cnica 4 19 4 69 Saving Reseltllig cid a 4 19 U User Data File Format Examples Mee 7 81 SEI 7 81 A a 7 81 User Data Files EE 7 80 Bai EE 7 80 Index 10 E O E T EE 7 80 See also TonyPlot User Data Format EXAMDICS it derrito nera 7 81 See also TonyPlot UTIMOS EE 1 4 WNDU DOC eme 4 48 tel d uut EEA E E E E E AE 4 48 V Virtual Wafer Fab VWF A 1 1 VWF Automation Tools Advanced Features asocia 1 7 Experiementation eeeeeeeeeee eere 1 6 MASTER Database rrara eran arad Hmmm 1
456. o disk In the following startup instructions if not running C Shell do not use the ampersand amp at the end of the entered command line The tells csh to run DECKBUILD in the background Since a SSUPREMS input deck is built 1n this tutorial start DECKBUILD with the default simulator set to SSUPREMS3 by entering the command deckbuild s3 amp The simulator can also be selected or changed after DECKBUILD has been started from the Main Control popup In a few moments DECKBUILD will appear on the screen If it doesn t or if any error messages appear refer to the SILVACO INSTALLATION GUIDE to verify that DECKBUILD was installed correctly 4 2 3 Writing a SSUPREM3 Input Deck Click and hold the MENU mouse button over the Commands menu button to display the SSUPREM3 Commands menu It will appear as shown in Figure 4 2 showing all the buttons at the top of the frame Deckbuild 3 3 NONE dir tmp mnt writer hankm Process p E Electrical p File uo P Notes Models Extract Parse Deck CH Tue Tun 15 15 15 44 1333 Commands input fram file dev tty SSUPREMS gt SSUPREM3 started SSUPREM3 Figure 4 2 Deckbuild SSUPREM3 Commands Menu Next move the pointer over the Initialize menu item and release MENU The SSUPREMS3 Initialize popup will appear as shown in Figure 4 3 SILVACO International 4 5 VWF Interactive Tools 4 6 TH Deckhuild SSUPREM3 Initialize Material v silicon
457. o each is used to define what is currently active This allows easy selection of different resolutions for different types of work The values specified in these fields are stored in the layout files These can be set to different values depending on the simulator selected They cannot be stored as defaults See Section 10 8 2 Default Properties for a description of the other options that affect layout and editing on the screen SILVACO International 10 7 VWF Interactive Tools 10 4 2 Defining Layout Layers IC layout descriptions within MASKVIEWS are specified in terms of polygons that exist on a number of layout layers each of which corresponds to a reticle mask used in the IC fabrication process Layers are defined by using the Layers popup Figure 10 4 displayed by selecting Define Layers ey Maskviews Layers Current layer Label ME we Mame undefined Field Electrodes Mis alignments Delta CD x 00 y 00 0 00 Minimum spacin Thickness a a Divisions Spacing Distance 3 Figure 10 4 Layers Popup The values displayed in the popup relate to the attributes of the current edit layer The current edit layer can be changed by selecting a new layer name on the key panel The Layers fields are the following Label This field provides a short abbreviated five character name for the layer which 1s used on the key canvas and to identify the layer on any generated outputs You must press the Return key
458. o measure the gate oxide thickness in both types of devices one approach might be to define a region GATE in MASKVIEWS where WELL is don t care AAD is true and POLY is true All other masks would be don t care Then use this region in an extract statement extract oxide thickness region GATE rather than extract oxide thickness x val 1 0 Electrodes Electrode positioning is the last remaining area of the deck that requires layout specific values In non generic decks an electrode statement in ATHENA requires both a specific x location value and a name for that electrode For example electrode name gate x val 1 0 A generic deck can obviously assume neither the x location of an electrode its name nor even how many electrodes there are The autoelectrode statement provides the solution to automatically place and name electrodes Use MASKVIEWS to define which masks are electrode masks and the corresponding electrode names Electrode masks are those masks that are used for defining one or more electrodes For instance the POLY mask for a MOS device is an electrode mask because it forms the gate contact Along with the electrode attribute MASKVIEWS allows the specifying of an electrode name for a mask or part of a mask as well Electrode names and masks should be specified in MASKVIEWS before generating a cutline file in MASKVIEWS To use the electrode masks enter the autoelectrode statement in the input deck
459. o provide process simulators with layout data enabling any point on a real layout to be simulated without having to manually calculate mask edges MASKVIEWS can either write a summary file for later use either by DECKBUILD or the simulator directly or can modify an existing simulator input deck with the statements required to perform the masking actions To open the popup that controls the output destination select Files Output The popup contains a list of all files in the current directory matching the Filter field The Write to deck option is used to select the type of output to be created If set then the file named in the File field must be a valid simulator input deck The output is then a modified version of this deck containing the mask information If write to deck is not set then the output file written only contains the mask information and no input file will be required The output file name has a unique integer number appended to prevent overwriting existing files 10 5 2 SSUPREM3 When the target simulator is set to SSUPREMS3 see Chapter 4 DeckBuild Section 4 3 Invoking DeckBuild MASKVIEWS generates a 1D set of mask elements corresponding to a single point on the layout After clicking on the Write file button a single point on the layout is selected and the output will be written The input deck should be a valid SSUPREMS deck with the line mask abbreviated _layer_name added where mask information i
460. ocessed or a semiconductor device being tested electrically The VWF CORE TOOLS are ATHENA ATLAS and SSUPREMS 2 VWF INTERACTIVE TOOLS These tools are designed to be used interactively in the construction of a single input deck Being Graphical User Interface GUI based they make the job of constructing an input deck more efficient The interactive tools can be used either in conjunction with a set of files or as integral components of the surrounding VWF AUTOMATION TOOLS 3 VWF AUTOMATION TOOLS These tools enable you to perform large scale experimental studies to create results for subsequent statistical analysis The VWF AUTOMATION TooLs make use of both distributed database technology and interprocess communications IPC software methods This manual describes the use of the VWF INTERACTIVE TOOLS The implied methodology used is that a simulation can be created interactively and tuned to a known result Once complete you may seek to understand the performance of a device in cases where the manufacturing process varies The VWF AUTOMATION TOOLS can then be used to conduct large simulation based experimental split lots Section 1 3 VWF Automation Tools briefly describes the VWF AUTOMATION TOOLS The basic concept of VWF incorporates the use of large parallel machines or networks of workstations VWF then allows you to use AUTOMATION TOOLS to create simulation results in sufficient quantity for use in design optimization SILVACO Int
461. ode name and positioning information will be taken from the MASKVIEWS layout data Note DECKBUILD only remembers the electrodes specified within each mask Therefore an autoelectrode statement must be used for every mask layer where electrodes are defined This defines multiple electrodes for a single autoelectrode statement within the current mask SILVACO International 4 63 VWF Interactive Tools See Section 4 11 IC Layout Interface 4 16 5 DEFINE and UNDEFINE DEFINE replaces all subsequent occurrences of an identifier with a specified string UNDEF INE cancels this action Syntax define qdentrfier rest ot _line gt undefine identifier Description The identifier should either be a quoted string or a well formed identifier That is one which begins with a letter or an underscore and continues with an arbitrary sequence of letters digits underscores and periods Every time this token is identified thereafter it will be replaced by the whole of the rest of the DEFINE statement from the end of the token down to the end of the line This lt rest_of_line gt component may consist of any characters whatsoever You don t have to flag the presence of the defined DEFINE token using a or prefix or any of the other methods mentioned in Section 4 16 3 ASSIGN Substitution of a defined DEFINE token will persist until you encounter an UNDEFINE statement referencing the same token Substitution of defin
462. oelectrode Enabling Enable cutline substitution by setting Auto Maskviews to ON on the Main Control Options popup Substitution begins as soon as a cutline file is loaded from the MaskViews Cut Files popup This popup can be accessed from the Tools menu See Section 4 8 Tools for information on loading a cutline Disable substitution by turning Auto MaskViews to OFF No substitution occurs even if a cutline file is loaded Cutlines can also be loaded and cleared from DECKBUILD at runtime using the go simulator cutline filename syntax DECKBUILD loads the MASKVIEwS cutline from the current working directory if you do not specify path DECKBUILD clears an existing cutline if you specify cut 1ine none 4 11 4 Rules of Thumb To make sure that your deck is indeed generic obey the following rules 1 etch statements are either etch dry material thickness value or etch material all 2 Do not use etch left material pl x value 3 Do not include horizontal mesh information for 2D process simulators The mesh information is substituted automatically at run time 4 Use mask statements where photoresist is required mask name PWELL or mask name AAD reverse 5 Beware of wedges As in real experiments wedges fillets and spacers may appear if anisotropic dry etches are not used carefully 6 Use region in extract statements rather than x values extract oxide thickness region GATE 7 Use autoelectrode statements rather th
463. of DECKBUILD while ATLAS was running The execution of the extract statements should yield the following values but may differ slightly Eeer Ee nbeta 0 000243389 ntheta 0 13192 SILVACO International 2 27 VWF Interactive Tools 2 8 Going Further Now you completed this tutorial the next step should be to start using DECKBUILD TONYPLOT ATHENA and ATLAS to perform simulations You can gain more experience by loading running modifying and experimenting with a selection of the examples that are provided with DECKBUILD Depending on your applications you may never need to go beyond this basic level of use Many however wish to proceed sooner or later to more advanced use of semiconductor technology CAD As you go further you will find there are at least two more major milestones ahead Refer to these as intermediate and advanced levels of use Intermediate level users exploit the full range of features provided by DECKBUILD and TONYPLOT and by the other VWF INTERACTIVE TOOLS described in the DEVEDIT MASKVIEWS and OPTIMIZER chapters In addition you must acquire broad familiarity with all of the features options and capabilities of ATHENA ATLAS MERCURY and CLEVER or whichever simulator is used See the respective user s manuals for more information There are tutorial chapters in each of these manuals Advanced users exploit all the levels of the VIRTUAL WAFER FAB VWF environment The VWF INTERACTIVE TOOLS are the first
464. of plot under the pointer TonyPlot V2 8 22 A SES File ci View v Tools 7 Print j Properties Help eA Display ATLAS Annotation Data from bjtex04 2 str Labels AA O Level names DIr Set zoom Zoom out nz Duplicate 0 3 0 4 Ww E 0 5 0 6 D F 0 6 0 9 1 0 2 0 4 0 6 0 0 1 1 2 1 4 1 6 1 8 e Microns Loading file fhome robinj bjtex04_2 str Ok SILVACO International 2004 Figure 7 6 The Plot Menu The Plot menu contains the following items e Display accesses the Display popup for the plot This popup is used to change Display Parameters i e how the data is displayed For full details refer to the Display section e Annotation displays the Annotation popup which allows control over titles axes and so on Refer to the Annotation section for more information e Labels accesses the Labels popup This is used to add notes and labels to a plot as titles markers etc Refer to the Labels section for more details Level names allows you to change the names assigned to overlay plots Overlay plots use the data file name as a default name for each level This popup also allows you to select whether graph lines have points or lines for individual levels Refer to General Information section for details about overlays 7 16 SILVACO International TonyPlot e Set zoom displays the popup shown in Figure 7 7 This popup is used to define a data range to which the p
465. of printers 1 2 3 DevEdit The Structure Editor is an interactive tool for specifying and modifying structures It includes a meshing module that supports mesh generation refinement and unrefinement You can define and modify doping using analytical functions DEVEDIT can be used stand alone or can be invoked by DECKBUILD Large devices with many grid points can be specified completely using DEVEDIT making this tool valuable as a pre processor for 2D device simulators A special mode of DEVEDIT supports the definition and meshing of 3D structures 1 2 4 MaskViews The IC Layout Editor is a versatile IC layout editor used to specify layout information to process simulators MASKVIEWS supports simulation based experimentation with layout variations Experimentation based simulation was previously restricted to the varying of process flow parameters only MASKVIEWS supports experimentation dealing with phase shift masking technologies critical dimensions misalignment tolerances and global shrinks It is fully interfaced to GDS2 Stream formats so that complete IC layouts can be imported and exported Small subregions can be selected for detailed analysis You can use MASKVIEWS interactively through DECKBUILD 1 2 5 Optimizer The OPTIMIZER provides optimization capabilities that are sophisticated efficient and easy to use It was originally developed for use with the UTMOST parameter extraction and device modeling software Optimization cap
466. og_normal type has a probability density function of the distribution of log x would be nor mal p x a E ae with X x T B 5 This distribution needs four coefficients the last coefficient should be 1 or 1 and gives the sign in front of X coeffs a u 0 B 6 SILVACO International B 9 VWF Interactive Tools gamma The gamma type is the time to wait for several events that occur with a Poisson distribution The probability density function 1s p x X 1 with A e EL B 7 This distribution needs four coefficients the first coefficient should be a ve integer and the last should be 1 or 1 Wi coeffs a u O B 8 Weibull The probability density function of the weibull type is E exp X with X 4 B 9 a X p x E This distribution needs four coefficients the last coefficient should be 1 or 1 Wi coeffs a u o B 5 5 no_exec Syntax no exec type lt ssf spayn gt outfile lt filename gt Description This is a debugging command If it is issued before an experiment then DBINTERNAL will generate a file lt filename gt This file contains a list of the independent variables which would have been passed to the simulations No actual trials will be performed An ssf format file is a simple list of numbers suitable for viewing in a text editor It can also be plotted in TONYPLOT A spayn format file can be analyzed with SPAYN Example If you run an experiment
467. olloff No Rolloff No Rolloff No Rolloff Figure 9 34 Rolloff Icon Figure 9 34a Rolloff Icon Start X 4 End X Start X End X No Rolloff Alternatively the source area can radiate out of a circle This is mainly used in 3D mode Rollaff Ho Rolloff Ha Rolloff Rolloff Ho Rolloff Ho Rolloff Rolloff Ho Rallaff Ho Rallaff Figure 9 35 Circular Rolloff Both Rolloff Both Figure 9 36 causes the same rolloff function to be used in both the negative and positive directions away from the impurity source area While each axis has its own roll off function to create different rolloffs in the negative and positive directions on the same axis see Combining impurity rolloffs FOTO t Rolloff Figure 9 36 RolloffzBoth RolloffzHigh Rolloff High Figure 9 37 causes the rolloff function to be used in the positive direction from the impurity source area In the negative direction the impurity value drops to steps down to zero if the distance is greater than zero TIOS Rolloff Rolloff Rolloff Ho Rolloff Rolloff Figure 9 37 RolloffzHigh Rolloff 9 48 SILVACO International DevEdit RolloffzHigh P Step Rolloff High Premature Step or High P Step Figure 9 38 causes the rolloff function to be used in the positive direction from the impurity source area In the negative direction the impurity value drops to steps down to zero if the distance is greater or equal to zero This causes the negative
468. ompt enter Oo tonyplot This starts TONYPLOT with no data file loaded and with all options set to their default values To load files at the same time TONYPLOT starts just specify the filenames on the command line TONYPLOT figures out the type of file and display the data accordingly To change some of the options there are flags available that can also be given on the command line All of these flags begin with a dash 1 e mono so do not try to load files that have names starting with a dash Some of the option flags are position sensitive so that in some cases the option must precede the file name when present and in other cases must follow the file name However most of the options are position independent Some of the options are listed below with a brief description 7 4 SILVACO International TonyPlot nosort Disables sorting By default ToNvPLoT sorts all 2D mesh files so that the triangles are ordered This allows for faster drawing and 3D elevation plots to be drawn print lt file gt Tells TonYPLOT that you wish to print the data file rather than viewing it on screen If this is the last argument on the command line or is proceeded by another option flag a default print file name is used usually print out 0 Otherwise the proceeding argument is taken as the name of a print file to be created printer lt pname gt When used with the print option this tells TONYPLOT to use lt pname gt as the printer
469. on Any one of these four cards cause DEVEDIT to exit or if reading a file the remainder of the file is ignored 9 13 18 REFINE Manually refine existing mesh Syntax REFINE DIRECTION X Y BOTH UNREFINE X1 lt N gt Y1 lt N gt X2 lt N gt Y2 lt N gt POINT lt l lt N gt lt N gt POINT 2 lt N gt lt N gt LEFT lt N gt TOP lt N gt RIGHT lt N gt BOTTOM lt N gt Description More less if unrefine triangles are created in the x y or both directions in the specified rectangle A mesh must currently exist that was not loaded from a structure file Parameters DIRECTION 7 x y both unrefine DIR Refine direction x more triangles horizontally twice as many y more triangles vertically twice as many both more triangles four times as many unrefine less triangles X1 lt n gt LEFT Left side of box to un refine in microns Y1 lt n gt TOP Top of box to un refine in microns X2 n RIGHT Right side of box to un refine in microns Y2 lt n gt BOTTOM Bottom side of box to un refine in microns POINT 1 lt n gt lt n gt X1 Y1 P1 as one parameter POINT 2 lt n gt lt n gt X2 Y2 P2 as one parameter Replaces Existing Card Refine Mode lt C gt P1 lt POINT2D gt P2 lt POINT2D gt See Also MESH SILVACO International 9 77 VWF Interactive Tools 9 13 19 REGION Add replace or delete a region Syntax REGION DELETE 1ID lt n gt ID lt c gt
470. on It indicates some common errors and shows how different setup parameter and target values are designed to work Possible error conditions include the following Input parameters have little effect on extracted results This 1s usually indicated by very little target movement as seen on the Graphics display during the optimization Use different parameters increase the parameter min max range or change the parameter type from linear to log e Targets conflict with each other This is an extremely common problem For instance asking the OPTIMIZER to optimize to a thick gate oxide thickness and to a low threshold voltage that isn t feasible with the thick oxide is doomed to fail The best way to get around these types of problems is by carefully choosing targets and target values plus changing the weighting of some targets to make them more or less sensitive than others You can make a target less sensitive by setting its weight to a number between 0 and 1 Numbers greater than 1 make it more sensitive 1 e it must be met with a smaller percentage error Input parameters hit their minimum or maximum ranges This can happen if the initial value is not very close to the value required to achieve optimization Increase the min max range of these parameters e Failure to converge If all the other error conditions are taken care of and the optimization still does not converge it s often because just a few target points can not b
471. on It is used in cases where a 1 D device simulation 1s both easier and faster to turn around a result Examples of the QUICKBIP extract command language are listed as follows extract name bip test bf bf extract name bip test nf nf extract name bip test is gpis extract name bip test ne ne extract name bip test ise ise extract name bip test cje cje extract name bip test vje vje extract name bip test mje mje extract name bip test rb rb extract name bip test rbm rbm extract name bip test irb irb extract name bip test tf tf extract name bip test cjc cjc extract name bip test vjc vjc extract name bip test mjc mjc extract name bip test ikf ikf extract name bip test ikr ikr extract name bip test nr nr extract name bip test br br extract name bip test isc isc extract name bip test nc nc extract name bip test tr tr Any name can be assigned to each command In the case of a 2 D simulator the lateral position of the vertical profile has to be specified with the parameter x val n For example extract name forward transit time tf x val 0 3 Alternatively a boolean region can be specified when running in conjunction with the IC Layout interface For example extract name my test tf region pnp_active_poly In this case the bipolar test is performed only in the case where an IC layout cross section intersects the named region You can modify QUICKBIP tuning parameters for using the
472. on choices along the bottom represent various items that can be drawn on a histogram plot These are Lines drawn from one bar to the next Solid Bars which are the default Jitter Plot to show the distribution of all the data points Cumulative Curve to show the total number of data points over the X axis range and SPC Limits which are drawn when RSM output quantities are plotted on the histogram See the Production Mode section for information about SPC limits 7 13 2 Pie Charts Control of pie charts is simple Just select the quantities to be displayed from the list and a pie 1s drawn for each of them To remove a slice from each pie enter the number of the slice into the text field labeled Remove Slice A value of zero means remove no slice 7 13 3 Scatter Plot Scatter plots show distributions of data in an x y graph By selecting various parameters for the X and Y axes the correlation of parameters can be assessed graphically X Axis Choose one quantity to be plotted along the X axis Y Axis Choose one or more quantities to be plotted along the Y axis 7 13 4 Box Plot Box plots are used to examine the overall structure of the data Use the list to select the quantities to be plotted and a box is drawn for each one The boxes can be displayed horizontally or vertically and when they are displayed horizontally a jitter plot can also be added which shows the distribution of all the data points for each box 7 13 5 Sun
473. on given to each input 1s Gaussian with a mean value half way between the minimum and maximum value of that input The standard deviation will be 1096 of the mean To alter the distributions for any input use the Input Distribution popup which 1s displayed when this option is chosen from the Define menu at the bottom of the Production popup Control Items The Input Distribution popup shows a list of all inputs currently loaded and the type of distribution for each one along with its mean and standard deviation Underneath the list the values for the currently selected input are shown The name of the input 1s fixed and cannot be changed but the other items can Press the Return key on the Mean and Std Dev text fields to submit changes to the list If a new distribution type is selected the list is updated automatically When all desired changes have been made click on Apply to commit the new values If the Production popup is set to Yield Analysis mode the new distribution types are shown in the scrolling list To examine and alter the distributions graphically press the View button This summons a small window showing a histogram distribution of the selected parameter Select other parameters to view their distributions also The sliders under the histogram can be used to modify the mean and standard deviation of the parameter Click on Apply to save the values back to the original scrolling list Clicking on the Reset button dis
474. on the popup is labeled Destination This instructs ToNYPLOT to either create a printout directly or to create a hardcopy file instead Choose either Printer or File When File is selected specify a filename If a filename 1s omitted a default filename 1s provided Regardless of the chosen destination tell TONYPLOT the name of the printer that is to be used If the destination is set to Printer the hardcopy appears on that printer immediately if set to File the file produced is suitable for sending to that printer at any time The names of printers that can be selected are the same as those seen in the Printer Editor It should be clear that if the printers have been set up correctly with the Printer Editor from now on only a name need be selected from this popup As well as choosing a printer it is necessary to choose a form to which the hardcopy 1s scaled These names are the names seen on the Form Editor Again it should be clear that as long as all the forms are entered correctly with the Form Editor from now on only the appropriate name is needed to be selected Once the options are set the changes must be applied to do this click on the Apply button To create a hardcopy now click on the Print button this also applies the changes it is not necessary to press both buttons To create a hardcopy later choose Print View from the main Print menu and the same options are used If using the same options again is desired save the set
475. on with any GDSII read write operation The format of the files are lines of the format layer number layer abbreviation layer description When the GDSII structure is loaded if any elements are found to exist on layer layer number then a layer with the corresponding name and description will be formed in MASKVIEWs When a GDSII structure is saved any elements existing of layers labelled layer_abbreviation is assigned to the layer layer number CIF is another hierarchical file format for describing layout You can import export CIF files by selecting the Files gt Import Export CIF format which cause a File Loader popup to appear The name of the CIF file can be selected here and loaded by clicking on the Load button If the CIF file preview property has been set to yes then a popup is displayed showing the first level hierarchy of the CIF file with numbered boxes indicating the relative position of each structure To descend into a structure point to 1t with the mouse pointer and select the Zoom in menu option from the mouse menu The sub structures contained within the structure are then displayed If no substructures exist then the display is blank The path leading up to the current structure is displayed along the top of the popup The hierarchy can be ascended by selecting the Zoom out option from the mouse menu Once the desired structure in the hierarchy has been reached clicking on the Load button loads the data into MASKVIEWS
476. ons and DECKBUILD layout using the Control Pad In addition the important runtime control features of History and Plot are placed here for easy and quick use 4 5 2 Choosing a Simulator 4 20 Choose a new simulator when writing or modifying a deck for that simulator to see its Commands menu or to shut down the currently running simulator and start up the new simulator DECKBUILD provides control over each of these actions with Options To change over to a new simulator click and hold MENU in the Set Current Simulator setting A list of available simulators 1s shown Figure 4 11 Move the pointer over the desired simulator and release the MENU button Activate the options that are appropriate usually all except Write to Deck Finally click on the Set Current Simulator button y Deckbuild Main Control Category Control Pad Formatting Set Current Simulator SSUPREMS With Options SURES j Auto Interface ATHENA E B write to Deck ATLAS SetCurrer Fastatias ODIN SIMULATOR CONTROLS Devedit i History Props Plot Curre Smarts pice a Plotter Props Auto MaskVigws Select cutf HIPEX Ne active structure Figure 4 11 Main Control Set Current Simulator SILVACO International DeckBuild In the following section the current simulator means the simulator before the button is clicked and the new simulator means the current simulator after the button is clicked Based on the chosen options the
477. ool allows you to probe any point within the structure To probe a point click the Probe button in the Toolbar A particular point in the structure needs to be selected for the probe to extract data for all the quantities present in the structure When you click on the structure a sphere appears at the selected location on the structure see Figure 8 19 The Probe View is then updated with the relevant information see Figure 8 20 Data from mos2ex04 2 str Matenals Aluminum Polysilicon Sio z Figure 8 19 An example of a Probed Structure 8 30 SILVACO International Materials EI sio 2 Donor Conc Acceptor Conc Potential E Field X E Field Y TonyPlot3D TonyPlot3D Probe View Element of mos2ex04 2 str 2 NS 0 158624 0 603067 0 162152 0 125214 0 520038 0 127396 244 833 565 646 1075 51 168 609 406 24 889 593 33573 6 23196 34882 6 30683 4 20329 3 32033 5 Figure 8 20 Probe View The sphere and the picked element prism or tetrahedron will be drawn with identifiers at its nodes in the Probe View For each node quantity values are displayed The exact position of the probe is also shown with its material and region identification x y and z positions You can also use the mouse to move the picked element in the Probe View as described in the Plot Control Using the Mouse section on page 8 7 Note You can also probe the triangles of the cutplane The picked triangle is then drawn in th
478. ools 10 7 Utilities 10 7 1 Regions Regions are used by DECKBUILD to define areas on IC layout where parameter extraction is to be performed For example if a cutline intersects the p channel gate region then the command extract name px j Xj region pgate extracts the junction depth under the p channel gate region Regions is a display mode used to view sections of the layout that correspond to boolean combinations of masks that are present or absent An example of such for a CMOS layout would be an n gate that could be defined as any layout area where WELL is absent and doping oxide and polysilicon are all present with no other masks having any effect To enter Region mode select Regions on the menu at the top of the key panel All polygons are then drawn as outlines only with the color fill used to indicate any defined regions The region key is displayed on the key panel Regions are defined using the popup displayed by selecting Define Regions The Region menu at the top of the popup Figure 10 14 1s used to select one of the available regions for definition The region is then activated deactivated using the on off selector and named in the Title field The region mask sets are then defined in terms of true false don t care selectors displayed next to each layer name Select true when a mask on the layer must be present Select false when a mask must not be present Select don t care to indicate the layout layer has no effect on the
479. op item minimum middle item and interval or number of steps bottom item can be set or left to automatic defaults The default minimum and maximum values are the minimum and maximum values of the data in the structure s The default number of steps is the same as the number of colors in the current color set see below e Drawing style Selecting the pencil creates line contours while the paintbrush creates filled contours fringe plot If filled contours are plotted optional outlines can be added be selecting the Outline icon which is to the right of the paintbrush TONYPLOT provides several color sets which can be used for contour plotting If the contour range is determined by the number of steps Num selected the number updates to match the number of colors available in the color set when one is selected Level widths If the drawing style is set to line contour this option forces overlayed plots to use a different line width for each level e Key title The key title can either be set automatically by TONYPLOT set to Auto or entered by hand to create a custom title set to Specify An automatic title consists of the name of the quantity SILVACO International 7 21 VWF Interactive Tools plotted with units if appropriate A custom title is created by entering the desired text into the text field supplied This title is used on the contour key for this contour set e Functions Click on this button to display the Fun
480. option The cursor appears as a scull and cross bones Hold the left mouse down and drag a box over the points to be deleted Upon releasing the mouse button the points are deleted and the region modified This may be important in minimizing the number of unnecessary points leading to large numbers of triangles 9 38 SILVACO International DevEdit 9 8 DOPING DEFINITION 9 8 1 Overview Doping can be defined analytically with DEVEDIT Doping can be graphically defined by indicating an area or line This line or box is given attributes that describe in detail the doping to be added to the structure 9 8 2 Defining an Impurity Source Line Doping can be defined about a line source drawn on the device The line source can be vertical or horizontal to the main axis A doping line is defined by choosing the Add option from the Impurities menu The area to the right of the base window appears as shown in Figure 9 30 The Line Mode switch in the Impurities control window should be switched to Line A line source has a constant doping concentration along that line segment and the concentration can roll off in magnitude in any perpendicular direction from the line segment The line is defined on the screen by clicking the left mouse bottom at the start of the line and clicking again at the end of the line Once drawn the line can be adjusted by clicking a revised point at either end of the visible line The end of the line to be modified is determined
481. options for donors acceptors and specific impurities One can also select the location of the Contour Legend by using the right mouse button adjacent to Contour Legend Impurity Junctions This toggle switch will display the p n junctions in a device SE re canc pcc conce MM MOO MH oe Figure 9 15 Displaying the Net Doping Distribution in DevEdit SILVACO International 9 21 VWF Interactive Tools Mesh Creation Boundary Conditioning There is one important issue that must be considered when creating a new mesh in an existing structure The first step that you should perform before creating a new mesh is boundary conditioning Material boundaries are defined by border points Necessarily these border points are also points that define mesh locations Slight modifications can be made to the structure to minimize the number of border points This process of eliminating points that are not critical is called boundary conditioning Examples of such unnecessary points include points along a straight line not contributing to the geometry of the structure and colinear points or nearly colinear such as within one degree Right click on Mesh and select Mesh Parameters Both the Mesh Parameters and the Boundary Conditioning sections are displayed By default Boundary Conditioning is set to Automatic Note the border points in the structure denoted as red dots particularly along the oxide material boundary If no boundary condition
482. or Specified Y The following command creates a frequency against drain current curve and calculates the intercepting frequency for a drain current of 1 5 e6 extract name Freq at Id 1 5e 6 x val from curve frequency i drain where y val 1 5e 6 5 5 6 Y Value Intercept for Specified X The following command creates a drain voltage against device temperature curve and calculates the intercepting temperature for a drain voltage of 5V extract name T at Vd 5 y val from curve v drain temperature where x val 5 0 SILVACO International 5 33 VWF Interactive Tools 5 5 7 Abs Operator with Axis The following command creates a curve of absolute gate voltage against absolute optical wavelength log 1og10 and sqrt also available extract name Vg optW curve curve abs v gate abs elect optical wavelength 5 5 8 Min Operator with Axis Intercept The following command creates a transient time against gate drain capacitance curve and calculates the intercepting time where the capacitance is at its minimum value extract name t at Cgate drain Min x val from curve time c gate drain where y val min c gate drain 5 5 9 Max Operator with Axis Intercept The following command creates a collector current against collector current divided by base current curve and calculates the intercepting collector current where Ic Ib is at a maximum value extract name Le at Te 1b Mex x vaLl from curve i collector
483. or by simply entering the text Delete text by choosing the insert point then backspace over the text to delete Another way to insert and delete text is by using the system clipboard To cut that is delete text from the deck click SELECT on the first character to cut Then click ADJUST on the last character to cut This operation selects the range of text to cut Finally choose Cut from the Edit menu The text 1s deleted from the input deck and is placed in the system clipboard To paste insert text from the clipboard place the insert point at the desired location then choose Paste from the Edit menu The text from the clipboard appears at the new location Copying Text To copy a section of text select the text to be copied using one of the select mechanisms described above then choose Copy from the Edit menu This copies the selected text to the clipboard To insert the text in the document place the insert point at the desired location and choose Paste Tips On Cutting And Pasting The following provides useful tips for cutting and pasting when working in the text Subwindow e Single clicking SELECT in text selects a single character double clicking selects a word triple clicking selects a line and clicking four times selects the entire document e Some may prefer the Cut Paste and Copy buttons on the keyboard not available on all keyboards rather than using the Edit menu e Text copied to the clipboard remains there
484. or the specified electrode or region extract name Min 2D phos conc 2d min conc impurity Phosphorus material A11 region gate y min 0 1 y max 0 9 The following multi line extract command measures the minimum concentration of antimony for the entire 2D structure and return the x y coordinates of the extracted concentration extract name Min 2D ant conc 2d min conc impurity Antimony material A11 extract name Min 2D ant conc X position x pos extract name Min 2D ant conc Y position y pos Note The x y position syntax must directly follow the 2D concentration extraction same as start cont inue done syntax We advise you to use the Extract popup to create these statements SILVACO International 5 23 VWF Interactive Tools 2D Concentration File The output file contains data of the format x y c where c is the value of concentration at the coordinates xy The following example extracts the boron concentration in Silicon for the whole structure extract 2d c nc s lle materzal sSrilicon ampurary boron ourriles conc dec 1D Material Region Boundary Extracting the maximum Y boundary upper side location of the first occurrence of silicon material for a ld cutline taken at X 2 extract name max y max bound material silicon x val 2 mat occno 1 Extracting the minimum X boundary left side location of the second occurrence of polysilicon material for a 1d cutline at Y 3 extract name 2 min x min bound mat
485. or top of structure respectively END lt n gt The end of the deposit If side top or side bottom start is an x coordinate otherwise it is a y coordinate Default value is right side or bottom of structure respectively ROUNDING ANGLE RND ANGLE When making a corner during a deposit this angle is used to determine how many points are used The angle should be between 5 and 45 degrees and be an even divisor of 90 The default angle is 30 degrees REGION ID lt n gt REG ID Region id number of the deposited region if the region reg is not joined with an existing region See auto join REGION NAME lt c gt REG NAME Region name of the deposited region if the region reg is not joined with an existing region See auto join MATERIAL lt c gt Specifies which material will be deposited Ge Silicon Aluminum AlGaAr etc See Generic Parameters for a more complete description AUTOMATIC JOIN lt boolean gt AUTO JOIN If two regions made up of the same auto joinmaterial presently touch the regions are joined into one region Attributes from region with the lowest id will be used for the combined region The default value is true COLOR lt n gt COLOUR Color used to display region during DEVEDIT in X windows mode This is a RGB bitmap with eight bits colper color DEVEDIT has only a limited subset of these colors therefore the closest match is used Some basic colors can be specified by name such as red green blue yellow
486. ormation This is the default setting e High Med plus input deck lines as they are queued to be run e Barf High plus input deck lines as they are actually executed 4 5 8 Formatting Category The Formatting category Figure 4 15 controls the format and initial state of input deck operations and is used in conjunction with the VWF iy Deckbuild Main Control Category v Formatting Indentation Spaces O 8 Initial state Fold All Unfold all Save as defaults Auto MaskViews Select cutfile No active structure Figure 4 15 Formatting Category Indentation sets the number of spaces that each level of operations is indented Top level operations are flush with the left margin while operations they contain are indented by this amount and so on with each level of nested operations Initial state controls what the format of the deck will be when DECKBUILD is invoked from the VWF Operations can either be completely folded so that only top level operations appear or completely unfolded so that all operations appear in their entirety The deck can also be left as is in the state when it was saved to the database 4 5 9 Arguments Category The Arguments category Figure 4 16 sets the default command line arguments used by DECKBUILD to start certain other VWF INTERACTIVE TOOLS To change command line arguments or to use a different program enter the new arguments and click on the Return key The new argument
487. ormed if that is impossible You can not change the base impurities until the region has a consistent shape while adding or modifying a region The impurity types are separated into four categories This is a list of the supported impurities 1 Silicon Donors e Antimony e Arsenic e Phosphorus 2 Silicon Acceptors e Aluminum e Boron e Gallium e Indium 3 Generic Donors Acceptors e Donors e Acceptors 4 Composition Fractions e Comp Fraction X e Comp Fraction Y 5 Net Doping directly Some of these values can also be set using Resistivity tables by clicking on the Set Si Resistivity 9 7 3 Deleting Regions A region can be deleted by first selecting the region to be deleted and selecting the Delete option under the Regions menu To select a region select the region listed in the scrolling list of regions on the main panel A selected region is surrounded with a red colored highlighted border in the main screen Adding a region can be used to etch a region out of an existing structure SILVACO International 9 37 VWF Interactive Tools 9 7 4 Modify Regions To modify a region select the region on the main panel in the region list then pull down the Regions menu and choose Modify Now the region parameters can be changed as in the add region 9 7 5 Deleting Boundary Points Boundary points on a region s boundary can be deleted at any time To delete a single point or a number of points select the Delete Points
488. ou select cut hole then drawing operations are used to cut holes in existing objects In order for hole cutting to succeed all vertices and all sides of the cut polygon must line within the existing mask object e Electrode For certain simulator modes this allows electrodes to be specified by defining two end points After selecting the option select two point for the electrode If the two points differ in by X and Y coordinate a rectangular electrode is generated Otherwise a straight line electrode is formed In both cases the electrode end points move to coincide with vertex points of the closes polygon e Auto label Selecting this option attempts to automatically label polygons with labels loaded from a GDSII file Polygons are automatically labelled if a label position lies within the polygon and the polygon does not already have a label e Add serifs Adds small square serifs at all vertex points of a selected polygon After selecting this option select a polygon for the serifs to be added to Note Serifs can not be added to serifs e Undo When enabled from the Properties section see Section 10 8 Properties this allows you to cancel the most previous edit command Once you perform an undo the option becomes unavailable until a further edit action occurs e Delete Erases a mask object 10 12 SILVACO International MaskViews 10 5 Simulator Control 10 5 1 Overview MASKVIEWS main function is t
489. ou to show hide move and change the color of Displays the Probe s settings Displays the Rulers settings the title You can also move the title by hovering the SILVACO International 8 25 mouse pointer over the title and pressing Shift Use the left mouse button and drag it to the desired location Also in this menu you can change the name of the title andthe subtitle The position of the title can either be constrained or float ing If it s constrained it remains at its position when you resize the screen If it s floating the position changes with the size of the screen Show Shows the Legend Hide Hides the Legend Properties Allows you to show hide move and change the color of the legend You can move the legend in the same way as the Title which is described above The position of the Legend can either be constrained or float ing which does the same thing as for the Title Show Shows the Probe Hide Hides the Probe Properties Allows you to show or hide the Probe You can also change the color of the probe and its axes Show Shows the rulers Hide Hides the rulers Properties Allows you to show hide and change the precision of the rulers VWF Interactive Tools Table 8 10 Right Mouse Menus Ruler Displays the settings of an Show Shows an individual ruler individual ruler Hide Hides an individual ruler Properties Allows you to show hide and change the
490. outputs were calculated in order to generate the plot A triangular mesh is created from these points in order to draw contours Projection This is not used in the 2D mode See the description of the 3D mode for an explanation Output Range The range over which contours drawn can be selected as one of two options The first option is to use the highest and lowest output values over the sampled input range This ensures all contour colors are drawn on the plot The second option is to use to absolute range of the model output which can be a greater range than that plotted 7 12 3 3D RSM Surfaces When the 3D mode is chosen TONYPLOT draws an RSM as a three dimensional surface with contours draw according to surface height Control over the display of these plots is the same as described above for 2D plots except that projection may also be specified Projection allows you to choose either parallel or perspective projections when the 3D surface is displayed Note These 3D plots can be rotated and scaled but not zoomed See the Plot Control section for details on 3D rotation and scaling 7 30 SILVACO International TonyPlot 7 13 Statistics Display Whenever statistics plots are present the Statistics Plot Display popup can be used to alter the way the data is displayed These Statistics Plots are often generated from PRODUCTION MODE tools see the Production Mode section Tonyplot Display Statistics Type Histogram
491. oved by selecting new end points on the layout The nearest current end point to the new selected point will be moved The View button is used to draw a summary display of the masks along the line Done cancels the write file operation Click on Write to write output If the Cutline edit property is not enabled the output is written once the second end point is selected SILVACO International 10 13 VWF Interactive Tools The View button has two options Full Grid and Edges Only that allow you to modify the grid display If you select Full Grid a summary display will appear with the initial grid lines that are generated by ATHENA If you select Edges Only grid lines that coincide with mask edges are displayed Note You should enable grid display and specify an appropriate display mask valuein the Properties window before attempting to modify the grid display using the View button options If you set the Request Filename property you must specify the name of the output file If Cutline edit is enabled then an extra field labelled Filename is available to specify the name If Cutline edit is disabled then a popup is displayed requesting the output file name after the second cutline point has been selected You can alter the values of the coordinates on the end points of the cutline by changing the values shown on the Cutline edit popup The input deck should be a valid ATHENA deck with the lines mask abbreviated layer name added where
492. ovided Display this now by choosing Forms from the main Print menu TONYPLOT comes with several form built in and these are OK for use with any printer If not a new form can be added The default forms are e Letter P A4 P selects letter sized paper in portrait orientation height larger than width e Letter L A4 L specifies letter sized paper in landscape mode width larger than height e A3 selects paper which is twice the size of Letter paper Only a portrait version is supplied The list on the left shows the names of these forms The one that 1s selected from this list has its various set up details shown on the right When adding a new form the name can be anything however it is preferable to choose a useful name The various page dimensions are displayed by TONYPLOT in inches although they can be given in centimeters Let us assume a new form needs to be set up and printed on unusual sized paper for example a 12 by 14 inch page with a 1 inch margin on all four sides To add this to TONYPLOT 1 Select and enter a name for the form It can be anything preferably something useful Call the new form Large type in the name Large into the space marked Name delete the name that is already there 2 The Width and Height are the area dimensions into which TONYPLOT is allowed to draw For our example the width is 10 12 minus left and right margins of 1 each Enter 10 into the Width field The
493. ow polygons sides and lines can be drawn None allows any lines to be drawn 45 amp 90 allows only vertical horizontal and diagonal lines to be drawn 90 allows only vertical and horizontal lines Options Grid switches on and off drawing of the layout space dashed grid lines Hints enables and disables hint messages which may be displayed at the foot of the main screen Pointer enables and disables the continuous display of the mouse pointer position at the foot of the key canvas Center origin specifies whether the 0 0 point lies at the bottom left of the layout screen or in the center This option may be automatically set by some of the simulator options e Display labels indicates whether the mask element labels are also displayed on the layout e Display masks enables or disables the summary display of the mask sets and grid preview generated when writing a simulator output file If ATHENA is the target the icon display choice allows you to alter the ratio of grid and mask display e Simulator defines the target simulator for MASKVIEWS e Cutline edit selects whether the ATHENA cutline can be moved before writing the output file 10 26 SILVACO International MaskViews e Write y grid enables disables writing the ATHENA vertical grid information to the output file Group buffer specifies whether the group cut and paste operations are performed on all edit layers at once or only on the current edit layer e File loader sets
494. ows ToNYPLOT3D when it s first loaded TonyPlot3D c SILVACO International 2002 SILVAC GE International aran Figure 8 1 TonyPlot3D Title Screen SILVACO International 8 1 VWF Interactive Tools 8 2 Differences Between TonyPlot3D and TonyPlot TONYPLOT3D only loads and displays 3D data It doesn t however recognize or display 2D data TONYPLOT consequently doesn t recognize 3D files Sometimes TONYPLOT may load 3D files and display a cross section of the data This behavior however isn t supported and shouldn t be expected for all 3D files While TONYPLOT is capable of loading and displaying several data sets simultaneously TONYPLOT3D can only show one data set which means you can only load one file at a time Whenever a new file 1s loaded the old plot is replaced with the new one 8 2 1 Starting TonyPlot3D To start TONYPLOT3D type tonyplot3d As with TONYPLOT the data file name that is being loaded can be supplied immediately Note The filename shouldn t begin with a minus character Table 8 1 shows a set of command line arguments that can be specified Table 8 1 TonyPlot3D Command Line Arguments Command Line pescnatlan Option p buffer Specifies the buffering mode to use when drawing the 3D Scene single double De single or double Display the command line options in the standard output nohw Forces TONYPLOT3D to avoid using any hardware graphics accelera tors that may
495. parison of similar data 7 14 4 Statistics Plots Some statistics plots do not have the regular range controls as described above Instead the controls allow user specified bin values to be entered which are used when calculating data distributions When a statistics plot is selected and the Annotation plot summoned the range controls include a choice allowing selection of Auto bins automatically determined by TonYPLOT according to the data range or to specify the bin values When Specify is chosen use the min and max text fields to enter the minimum and maximum bin values and then enter the Number of bins to be used between these limits TONYPLOT adds each bin value to the scrolling list when the Return key is pressed on the Number line 7 14 5 Axis Labels The x axis and y axis labels can be modified These are only updated on the plot when the Apply button is clicked on Note that once an axis label has been set in this matter it is always shown even if the quantity represented on the axis is changed To return to the normal axis label erase the user specified label from this field and click on Apply again Note Cross Section plots generated by the Cutline tool will display an automatic x axis label if none is entered manually This automatic title is provided by TonyPlot according to the type of cutline x axis desired see the Properties section 7 14 6 Footers Any plot can have footer subtitles in the left and or righ
496. pe vb 0 0 qss 0 max conc min conc lt IMPURITY gt lt MATERIAL gt mat occno lt EXPR gt region occno EXPR pedlom occno will default Lo all fegrons 7 2d conc file lt IMPURITY gt lt MATERIAL gt mat occno lt EXPR gt x max lt EXPR gt x min lt EXPR gt y max lt EXPR gt y min lt EXPR gt max conc file min conc file lt IMPURITY gt lt MATERIAL gt xstep lt EXPR gt A x max EXPR x min lt EXPR gt y max lt EXPR gt y min lt EXPR gt max pound I min Hound 9c wvet sEXPR Y Va l lt EXPR gt min v lt EXPR gt max v lt EXPR gt MATERIAL mat occno lt EXPR gt max bound min bound x pos y pos xval lt EXPR gt y val lt EXPR gt N MATERIAL min v lt EXPR gt max v lt EXPR gt SILVACO International 5 9 VWF Interactive Tools 5 10 2d area lt IMPURITY gt x step lt EXPR gt min v lt EXPR gt max v lt EXPR gt A x max lt EXPR gt x min lt EXPR gt y max EXPR y min lt EXPR gt y max EXPR y min lt EXPR gt region lt QSTRING gt FE Default value xesLtep 107 of device size CURVE FUNC CURVE ARG CURVE ARG min CURVE ARG C Returns min y val Tor curve max CURVE ARG jw Returns max y val Tor curve ave CURVE ARG Returns average value for curve slope xintercept yintercept maxslope minslope CURVE ARG Takes the tangent to the curve with either
497. plication Examples 9 ISOLATION ISOLATION Applications Examples 10 MESFET MESFET Application Examples 11 HBT HBT Application Examples 12 HEMT HEMT Application Examples 13 SIGEMOS SiGe MOS Application Examples 14 POWER Power Device Application Examples 15 OPTOELECTRONICS Optoelectronics Application Examples Figure 2 3 Main Control Menu This tutorial uses an example from the MOS1 category Select the MOS1 category by double clicking on this line of text or by selecting MOS1 from the Section menu SILVACO International 2 5 VWF Interactive Tools 2 6 The tutorial uses the second example in the MOS1 category This has the title NMOS Id Vgs and Threshold Voltage Extraction and uses an associated input file named moslex01 in Select this example by double clicking on the line numbered 1 1 or by using the Sub Section menu Text describing this example will be displayed Take a few moments to read the description It is very easy to print a copy of the examples documentation Click on the right hand button in the window where the description is displayed A Print menu appears offering you the choice of printing a page a section or the complete document Click on your choice Please consider carefully before printing the complete document as this is a lot of information Note The TCAD EXAMPLES USER S MANUAL VOLS I III have descriptions of all examples Select the Load Example button to load the input deck associated
498. plot also contains data for all the input values that were used these can also be plotted Use the Stat plot Display popup to select sets of data to be plotted and the type of plot It is possible to draw pie charts scattergrams box plots and other figures to examine the data See the Statistics Display section for more information 7 26 9 Input Parameter Ranges As RSM data is loaded into TONYPLOT a record is kept of the greatest range of each input parameter Along with these minimum and maximum values a nominal value is stored which represents the normal or default value of that input It is possible to alter the range and or nominal value of any input by using the Input Parameter Ranges popup which can be displayed by choosing this option from the Define menu found at the bottom of the Production popup Control Items The popup shows a list of all inputs from all loaded RSMs and shows the minimum maximum and nominal values for each one Underneath the list the name and values for the input currently selected are displayed the values can be changed but the name cannot Press the Return key on each text field to submit new values to the list TONYPLOT makes sure that the values are logical 1 e that the minimum is less than the maximum and the nominal lies between them SILVACO International 7 89 VWF Interactive Tools Once all the desired changes have been made to the list it is necessary to click on the Apply bu
499. popup is the same as for the on line manual Selecting Options5 About MaskViews displays a popup that shows the version number and release date of the installed program SILVACO International 10 25 VWF Interactive Tools 10 8 Properties 10 8 1 Overview MASKVIEWS has many properties that you can customize All of these can then be saved to a file and are recalled every time MASKVIEWS is started To open the Properties popup select the Properties button on the command panel or click on the Props key on the workstation keyboard if one exists There are several pages of property options in this popup To see these pages use the Category menu option Properties are stored by selecting the Save button saved data is stored in the file HOME masterrc which is shared between all the VWF INTERACTIVE TOOLS 10 8 2 Default Properties The Defaults properties section Figure 10 17 allows you to change the default editing operations and setup properties used by MASKVIEWS y Maskviews Properties Category v defaults Angle constraint None 45 amp 80 30 Options Wi Grid Wi Hints Pointer Center origin L Display labels yj Draw polygons Mj outline Wf fill Display masks W Simulator ATHENA Cutline edit wi write Y grid yj Request filename wi Cutline preview Mask polarity Dismiss Figure 10 17 Defaults Category Popup The following choices are available e Angle constraint is used to limit h
500. pressions or choose from a number of standard routines provided for the process and device simulators You can take one of the standard expressions and modify it as appropriate to suit your needs EXTRACT also has variable substitution capability so that you can use the results of previous extract commands EXTRACT has two built in 1D device simulators QUICKMOS and QUICKBIP for specialized cases of MOS and bipolar electrical measurement Both QUICKMOS and QUICKBIP run directly from the results of process simulation for fast easy and accurate device simulation SILVACO International 5 1 VWF Interactive Tools 5 2 Process Extraction DECKBUILD s process extraction window is shown below Figure 5 1 dy Deckbuild ATHENA Extract Extract ol Material thickness Figure 5 1 Process Extraction Name Material All Materials Material paras Occurrence Min value Max value Results datafile Extract location You may use this window to look at the following e Material thickness measures the thickness of the nth occurrence of any material or all materials in the structure e Junction depth measures the depth of any junction occurrence in the nth occurrence of any material e Surface concentration measures the surface concentration of any dopant or net dopant in the nth occurrence of any material e QUICKMOS 1D Vt calculat
501. py output and print files from TONYPLOT See Section 7 17 Printing for a full description of TONYPLOT printing capabilities The menu consists of these four options Print view Prints the view according to the current settings Options Sets up the parameters used when printing the view e Printers Displays the printer editor for changing the list of printers known to TONYPLOT e Forms Displays the form editor for changing the page formats known to TONYPLOT 7 3 7 The Production Menu When TONYPLOT is used in conjunction with the VWF and the Production Mode is enabled this menu is available It contains two groups of options the first group is a list of all the main Production Mode features and the second group allows direct access to some parameter editing popups used in Production Mode See Production Mode for a full description of these advanced topics Interactive Allows interactive user control over regression model parameters to study the effects on the response surface e Failure Analysis Predicts the most likely cause of failure in a production situation given the characteristics of the input parameters and the failed condition e Disposition This Production Mode feature is not yet available e Calibration This Production Mode feature is not yet available e Synthesis After a set of outputs required from a production environment is given this feature calculates the best set of inputs that should be used to
502. quantity can be chosen for plotting on the x axis All quantities available in all selected plots appear in this list If one of the plots does not have data for the chosen quantity nothing is drawn 7 26 SILVACO International TonyPlot Y Quantities Any number of quantities can be chosen for plotting on the y axis All quantities available in all selected plots appear in two lists There is a list for choosing quantities to be plotted on a linear axis and a list for those to be plotted on a Log axis Which lists are active depends on the setting of the Y scale item above A menu attached to each list accessed by pointing to the list and clicking on the MENU mouse button makes list control a little easier There are options to move selections from one list to the other and for rapidly selecting deselecting and locating choices in the lists Group When Cartesian data is plotted that contains different groups of data sets for the same y quantity this item can be used to specify which quantity divides the y value into its distinct groups For example a structure may contain data to show several plots of drain current against drain voltage for different values of gate voltage In this case the x axis would be set to drain voltage the y axis to drain current and the Group item to gate voltage The plot would show one curve of Id vs Vd for each value of Vg 7 11 2 Polar Charts When the graph type is Polar four
503. r adding each parameter to change its initial value minimum allowed value or maximum allowed value See Section 6 3 3 Editing A Parameter for more information 6 3 2 Deleting Parameters To delete a parameter 1 Place the pointer anywhere in the row to be deleted and double click the SELECT mouse button to make a row selection The row then appears raised Figure 6 7 2 Choose Delete from the pull down Edit menu to remove the selected row from the worksheet The Delete operation works on all currently selected rows More than one row at a time can be deleted See Section 6 8 Worksheet Editing for instruction on selecting more than one row 6 6 SILVACO International DeckBuild Optimizer iy Deckbuild Optimizer optex02 in o pt edited Mode v Parameters File v Edit v Optimize Properties Properties Parameters E A Minimum Line number Parameter name Add Initial value valle T TT Lin Log Reset Values E ERE Figure 6 7 Deleting a Parameter 6 3 3 Editing A Parameter The Parameter worksheet allows direct numeric cell value editing such as Initial value Minimum value and Maximum value See Parameter Fields on page 6 11 for an explanation of the fields Editing Numeric Values To edit a numeric cell value 1 Position the pointer over the cell The cell will appear indented 2 Click SELECT once and a text caret appears in the cell 3 Edit the cell value The work
504. r apply boundary conditions to limit complexity of borders between region This may help limit the number of triangles creating during mesh creation This may destroy the existing mesh Parameters WHEN never once automatic default automatic When boundary conditions will be performed Never Turns off boundary conditioning Once Performs boundary conditioning now when card is read Automatic Performs current conditioning and before each mesh command MAXIMUM SLOPE lt n gt max slope The maximum ratio of the vertical height to the horizontal width of each boundary segments If the ratio is greater than this it is broken into two line segments one vertical or horizontal and one with this limit Note Vertical and horizontal lines are considered to have a zero ratio not an infinite one Therefore only lines close to being horizontal and vertical lines are affected This is used to limit the number of triangles mesh build creates This number must always be less than the maximum triangle ratio max ratio MAXIMUM RATIO lt n gt MAX RATIO The maximum ratio of a triangles height to its width ROUNDING UNIT lt n gt RND UNIT RND All boundary points are rounded to an even multiple of this unit Note Points created by mesh build are not rounded to this unit but will be strongly affected by the initial boundary point locations LINE STRAIGHTENING lt n gt LINE STR If two boundary segments have a joining angle of greater
505. r data file with the input deck The input deck must be specified and must match the optimizer data file You can also use it with run synonym opt to submit batch optimization runs e xview textedit arguments DECKBUILD accepts standard OPEN LOOK and textedit command line arguments XView arguments can set such things as the color font and layout of DECKBUILD while textedit arguments control such things as history limit margins and tab spacing filename specifies the name of the input deck that DECKBUILD should initially load If no filename is specified DECKBUILD leaves the text subwindow empty If the specified file does not exist DECKBUILD displays a notice prompt to confirm its creation SILVACO International 4 11 VWF Interactive Tools e option nolexec no auto no commands no write toggles these Main Control options for a particular run The options are exec for execute simulator auto for auto interface commands for the Commands menu and write for write text to text window all corresponding to the options setting on the Main Control popup A no indicates to turn the option off Repeat the option argument to enable disable more than one option e ascii enables DECKBUILD to run in a non X windows environment No popups or windows are created but an input deck can be run normally This option requires the use of an input filename and the run option The outfile option to store run time output is also
506. r extraction used only for setup UTMOST gt save outf mos ssf UTMOST gt UIMOST gt 4 Extract UTMOST parameters 4 52 SILVACO International UTMOST gt UTMOST gt save outfile tmp deckbEAAa0 6379 The following parameters have been stored VTHO 0 6363853 V K1 K2 0 0688711 Ka K3 WO 4 883524E 6 m NLX DV TO 3 L3 DAI UA 6 048951E 10 m V UB Ue 02331 1 V VS AT AO 015299819 Lu Al A2 S Oreo Ee ll be RDSW OFF 0 0139744 V NFACTOR PCEM Dad 00Z 1939 PDIBLI EPDILBLh2 9 00010933 Lei DROUT PSCBE1 9 97005E9 V m PSCBEZ TOX D m XJ UO 2S EH E Lem 27 V Fee ETA Ilinm 2 009946Ek 5 A Tree Isatm 2 773636E 4 A Isats UTMOST gt EXTRACT gt init infile tmp deckbEAAa06379 EXTRACT extract name P VTHO param VTHO P VIHO 0 06562985 V EXTRACT extract name P K1 Pek KE PISOS EXTRACT gt extract name P K2 Poh 05 0600 74 EXTRACT gt extract name P K3 P K3 65 7298EXTRACT gt extract P W0 4 88352e 06 m EXTRACT gt extract P NLX 4 6743e 08 m EXTRACTS Extract P DVYIO 3 EXTRACT gt extract E DVIIS0 452118 EXTRACT extract name P UA SILVACO International param K1 param K2 param K3 Oe POLIS Os e AS PAS S GADAL DES Da 600 EG Os 0 55 19 20 9 800 1 39 743999 0 0545063 0 7L460536 LES p 917 DES Ls IO TA SE 5 LOLA name P W0 param WO name P NLX param NLX name P DVTO param DVTO name
507. r the sheet resistance you specify sheet res For surface concentration specify surf conc as the extraction target and specify the name of the impurity impurity Net Doping A point within the channel is given using x val 0 45 The full extraction statement for the net doping channel surface concentration 1s then extract name chan surf conc surf conc impurity Net Doping material Silicon mat occno 1 x val 0 45 The extracted channel surface concentration is printed after execution chan surf conc 2 78719e 16 atoms cm3 X val 0 45 which 1s also logged to the file results final SILVACO International 2 23 VWF Interactive Tools 2 6 Completing The Device Structure Although the process simulation of the LDD MOS transistor is complete there is some additional work in ATHENA to be done before moving on to device simulation When symmetry is exploited during process simulation the expanded full structure must be assembled within the process simulator Once the full device is available the device electrodes can also be specified within ATHENA The calculations performed so far 1n this tutorial have calculated the shape of a half device The full device is generated by reflecting the calculated structure about the axis of symmetry through the center of the gate ATHENA structure statements are used to assemble a complete structure In this example the structure must be reflected about the right hand boundary This 1s achieved by the
508. r7ucb rsh rs6000 aix4 usr bin rsh hp700 hpux usr bin remsh Imnipso4 rirrix6 usrt bsc rsh Remote mount string removes the automount prefix usually tmp mnt from paths for remote simulation 4 15 3 Troubleshooting Remote simulation attempts to diagnose common problems when a simulator 1s started Two remote shell routines are performed to check the following five items if any are not correct the simulator is killed and an error message output to explain what 1s required e Unknown host Check if remote host name is entered correctly in the Simulator Properties popup or on command line If so contact your System Administrator as you are unable to access the required remote host e rhost file Error For remote simulation the name of the local host and your username must be entered into the rhost file located in your home directory To continue either add the line hostname username to your rhost file or contact your System Administrator to make the required changes e CWD Mount Error For remote simulation the current working directory must be mounted for the remote machine To continue either change the current working directory by loading your input file from a directory mounted for both machines or contact your System Administrator to ensure the present directory is mounted on the remote host e Write Permisson Error For remote simulation write access must be available for the temporary directory To continue e
509. ract statement Material and impurity names are selected using a Chooser Figure 5 3 5 4 SILVACO International DeckBuild Extract A Deckbuild SSUPREM4 Extraction Extract v SIMS Profile Name Material v Silicon Occurrence 4 _H 10 Impurity 7 Net Chem K vs V axis Depth vs Concentration Concentration vs Depth Store XZY datafile Filename extract dat Compute curve area X axis bauude unbounded P hounded HOBKEG start X aki viam amp iin value Marx value i o Figure 5 3 Material Chooser Popup If the required option is not present in the default setting select the User filter to search for other materials impurities The Hide Worksheet Result setting specifies that this extract should not be displayed in the VWF INTERACTIVE TooLs worksheet This prevents extracts used for calculation purposes only from cluttering the worksheet results Finally place the text caret at the desired point in the deck and click on the WRITE button The extract syntax is written to the deck 5 2 2 Extracting a Curve Some of the process extraction statements create a two dimensional curve as a result rather than a single value For instance extract constructs a data set of concentration versus depth for the SIMS SRP and electrical quantities distributions You can use the resulting 2 D curve for measurement and testing and as a target on the OPTIMIZER worksheet so that you can optimize against 2 D curves
510. ract certain properties of the simulated device For example you can extract properties such as material thickness net doping versus depth and Junction depth for process simulation and extract I V curves and parameterized values such as Vt Theta and DIBL for device simulation EXTRACT also allows you to construct your own routine to perform customized manipulation of points and curves DECKBUILD provides full popup driven generation of the extract statements For more information see Chapter 5 DeckBuild Extract For purposes of the OPTIMIZER EXTRACT statements come in two flavors Those that extract a single value like Vt called point targets and those that extract an entire curve like Vg vs Id called curved targets 6 4 1 Adding A Target To add a target follow these four steps 1 Display the Target worksheet by setting Mode to Targets To do this position the pointer over Mode press the MENU mouse button and select Targets The Target worksheet will then appear Figure 6 13 y Deckhuild Optimizer optex 2 in n pt Vt curve linear linear linear linear linear linear linear linear linear Figure 6 13 Target Worksheet 2 Select highlight the line in the input deck that contains the target you want to add To do this position the pointer over the line triple click the SELECT mouse button to capture the entire line The OPTIMIZER also accepts lines that have only a word or any character s
511. ration If n steps is set uniform etch steps are used Sheet Resistance Conductance Bias Curves Extract the Total sheet conductance against bias curve of the first p n region in the top first occurrence of polysilicon Polysilicon is treated as a metal by default but is flagged here as a semiconductor semi poly The device temperature is set to 325 Kelvin default 300 Kelvin and a bias ramped from 0 to 5V on the same polysilicon region extract start material Polysilicon mat occno 1 bias 0 0 bias step 0 00 bias stop 5 0 x val 0 1 region occno 1 extract done name Total SC curve bias 1dconduct material Polysilicon mat ocecno 1 temp val 325 x val 0 1 region occno 1 semi poly outfiles totalsSC dat Extract the n type sheet conductance against bias curve of the first p n region in the top first occurrence of silicon where a bias ramped from OV to 5V on the same silicon region and a value of QSS 4 0e10 1s specified for the first interface occurrence extract start material Silicon mat occno 1 region occno 1 bias 0 0 bias step 0 00 bias stop 5 0 x val 0 1 extract cont interface occno 1 qss 4 0e10 extract done name N type SC curve bias ldn conduct material Silicon mat occno 1 x val 0 1 region occno 1 outfile NtypeSC dat Extract the p type sheet conductance against bias curve of the first p n region in the top first occurrence of silicon where a bias ramped from 0 to 5V on the same silicon region and a bias of 2V is
512. ray Plot Sunray plots show data values distributed around a central point with the distance of each point from the center being proportional to the data value This yields a star or hedgehog like plot Select the quantities to be plotted from the scrolling list a sunray plot is drawn for each one The icons along the bottom control how the sunray plots are drawn with circumference lines radial lines and an bounding circle whose radius 1s the maximum data value 7 32 SILVACO International TonyPlot 7 14 Annotation The Annotation popup is used to specify plot parameters that are not dependent on the data and so do not fall into the category of display settings These are such things as titles axis ranges and so on The features of a plot that are independent from the type of plot are called annotation features and control of these is available through the Annotation popup Figure 7 20 To access this popup choose Annotation from any plot menu The Annotation popup works over multiple plots in the same way as the display popups The one difference is that this popup affects all selected plots regardless of their respective types Tonyplot Annotation Figure 7 20 Annotation Popup 7 14 1 Titles Each plot has two titles TONYPLOT assigns these titles by default but they can be changed if required The current main title and current subtitle are displayed in their respective text fields on the popup The titles can be
513. re are 4 or 6 in 3 D mode possible rolloff directions as follows above the area Y below Y e left X e right X e front Z for 3D e back Z for 3D These are described more fully in the Defining Impurity Rolloff Direction section below To define the impurity source area draw a rectangle on the existing device To place the first corner press and release the left mouse button over the desired location Now move the mouse to the opposite corner press and release the left mouse button again To change the shape move the mouse to the corner you wish to move then press and hold the left mouse button Move the pointer to the new position and release the button Observe that the corner is placed Changing Draw Mode to Line forces the drawing to be either a horizontal or vertical line You can alternatively set the locations manually by entering values into the fields Start X End X Start Y and End Y In 3 D mode the fields Start Z and End Z must be entered in manually This feature is also useful for more exact placement 9 11 6 Defining Impurity Roll off Direction After defining an impurity source area you must define how the impurity decreases as the distance from the source area increases along each axis The first step in this procedure is to select the appropriate icon desired If the impurity source area is a rectangle or a vertical line the Y Rolloff icon choices are as seen in Figure 9 33 This is the c
514. re folded and are not shown Click on Apply to apply the changes Parameter Fields e Line number The line number in the input deck on which the parameter is used The line number is updated automatically when the input deck is edited e Parameter name The name of the parameter The name can be redefined from the Parameter control popup e Response type Either linear or log The response type determines how far the OPTIMIZER swings the parameter value Log type parameters are swung further than linear parameters and should be used for parameters which have a logarithmic effect on the extracted results e Optimized value The value determined by the OPTIMIZER to achieve the best fit to the target s e Initial value The initial value of the parameter taken from the input deck e Minimum value The minimum value that the OPTIMIZER is allowed to use e Maximum value The maximum value that the OPTIMIZER is allowed to use Note As an aid to optimization the Optimizer uses Optimized value as each input parameter s initial value after the Optimizer has been run once To use the Initial value once again choose Reset Values on the Parameter Edit menu The optimized values are deleted on the Parameter worksheet SILVACO International 6 11 VWF Interactive Tools 6 4 Targets A target 1s the value of any valid extract statement in the input deck EXTRACT statements are special commands understood by DECKBUILD that ext
515. re is only one silicon layer in the structure it is unnecessary to give this information here This information however is required for more general structures e Finally you must tell the extract system where the n region is by giving the location of a point within the region take x 0 05 The extract statement for the sheet resistance is then extract name n sheet rho sheet res material Silicon A mat ocecno 1 x val 0 05 region occno 1 2 22 SILVACO International Tutorial When extract executes this statement it will print the following value for the calculated sheet resistance n sheet rho 39 9388 ohm square X val 0 05 This information is also written to the file results final in your current working directory LDD Sheet Resistance Beneath The Oxide Spacer To extract the sheet resistance under the oxide spacer simply move the point of interest to under the spacer For the present structure a value of 0 3 is reasonable Name the extracted resistance 1dd sheet rho extract name ldd sheet rho sheet res material Silicon mat occno 1 x val 0 3 region occno 1 The extracted value is printed after execution ldd sheet rho 2771 32 ohm square X val 0 3 Channel Surface Impurity Concentration The final parameter that is extracted before leaving the process simulation section is the net doping concentration at the surface in the channel In the case of junction depth you specify xj as the extraction target while fo
516. re no buffered commands the quit is executed immediately and the simulator exits DECKBUILD knows when the simulation will end and will print out the following message to the tty subwindow END In this case you may want to use kill which kills the simulator immediately or the stop now button to stop the execution after the current command The stop now function does not kill the simulator so you can continue by using the cont button To restart the simulator click on restart The current simulator is then started To start a different simulator choose the new simulator as described under Main Control The Set Current Simulator button on the Control Pad always starts the current simulator if the Exec Simulator option 1s set You can also pause the simulation Pausing is equivalent to typing a control Z in the C Shell the simulation immediately relinquishes its use of the CPU and stops Unpausing the simulator causes it to continue from exactly where it left off and 1s equivalent to bringing a paused job back to the foreground in C Shell Pausing 1s frequently used to free up some CPU cycles for some other temporary task When the task is finished the simulation can be unpaused Pause the simulator by clicking on pause The button s title changes to unpause Click on the button once again to unpause the simulator 4 6 7 Initializing the Simulator DECKBUILD provides a shortcut to initialize the simulator Select the name of a stru
517. re rounded up to the maximum number of digits Axis Precision to avoid cluttering the plots Log of zero When plotting results that involve the logarithm of zero in any base TONYPLOT uses this predefined number as the result Zero is used by default e XY plot ratio Controls the relative scaling in the X and Y directions of the data If To Window is chosen the axes scale independently so that the whole window is occupied If To Data is chosen the axes scale together so that the aspect ratio of the data is maintained In this mode at least one of the axes span the subwindow e Plot margins Controls the space between the edges of the plot and the edges of the window These are specified in terms of a percentage of the window dimension window width for left and right and window height for top and bottom e Net Doping Controls whether the absolute on signed values of the net doping are used in plots absolute or n p types SILVACO International 7 57 VWE Interactive Tools 7 19 3 Main Window Tonyplot Properties Figure 7 36 Main Window Properties Layout selects the style used for laying out subwindows within the view The first two options represent Multiple mode with either horizontal or vertical preference the third is Palette mode where one plot is larger than all the others the fourth is Page mode only one plot is shown at a time and the fifth is Scattered which allows you to move and resize the
518. red To name the file to be created enter a base name and a file extension One file is created for each overlay level in the plot For example if a three level plot is exported and the basename is hello and the extension is out the following three files will be created hello ZE eck hello 02 0uUE hello 03 out Some types of conversion are not allowed If such a situation arises TONYPLOT warns you that the specified export cannot be performed Production Mode When used in conjunction with VWF ToNYPLOT provides very powerful Pro duction Mode capabilities This can be enable by selecting this option Once enabled these fea tures remain active The Production Mode can also be activated by using the production option flag when starting TONYPLOT from the Unix command line Quit TonyPlot Choosing this item removes all plots structures and subwindows and then quits TONYPLOT Just to be sure TONYPLOT asks to confirm this action first SILVACO International TonyPlot 7 3 3 View Menu The View menu provides control over the current view using operations that affect groups of plots as described below On occasion items on this menu become inactive grayed out This occurs when the operation is not applicable to the current group of selected plots e Redraw all plots If at any time the view needs to be updated and all windows need refreshing choose Redraw all plots from the View menu This item is always active e
519. ree ways to enable the VWF PRODUCTION MODE graphics in TONYPLOT The simplest way is to let TONYPLOT do it automatically whenever an RSM plot is loaded PRODUCTION MODE is started The second way is to use the production command line argument when starting TonYPLoT The third method 1s to choose PRODUCTION MODE from the main File menu When PRODUCTION MODE is started there is an extra menu along the top of the main TONYPLOT window The new menu is labeled Production and appears between the Print and Properties menus This menu allows access to each of the five PRODUCTION MODE features Interactive control Failure Analysis Calibration Synthesis and Yield Analysis as well as some parameter editing popups i e Input range SPC limits Choosing any of the main features displays the Production popup in the appropriate mode This popup is explained in detail later Selecting one of the editing popups displays that popup 7 26 3 The Production Mode Popup By selecting an option from the main Production menu the Production Mode popup appears This popup shows all the RSM input and output parameters currently in use and allows the selection of some advanced features The popup can be set to one of five modes Interactive Failure Analysis Calibration Synthesis and Yield Analysis by either choosing the mode from the Production menu or from the choice item at the top of the popup Below the mode selector is a panel whose contents depe
520. region is silicon with corners at 0 0 2 0 2 2 and 0 2 and a base of boron of le 16 cm Refer to Section 9 6 1 Adding a Region for more details The second region is aluminum with corners at 0 0 1 0 1 0 2 9 Create an impurity distribution to describe the rolloff in the down direction the lower half the desired profile 4 Click on the Impurities button at the top of the screen see Figure 9 45 and then set the following parameters e Impurity Arsenic e Start X 0 e Start Y 0 2 e End xX 1 e End Y 0 2 e Peak Concentration le 20 e Reference Value le 16 base impurity value of silicon e holloff High Y Rolloff Gaussian Dist e Distance 1 distance to junction e Rolloff Both X Rolloff Error Function e Constant 0 1 5 Press Apply SILVACO International 9 55 VWF Interactive Tools Add Impurity Impurity Arsenic Color ES Draw Mode Rectangle Line Circle Ring Start X 0 0000 Microns Start Y 0 2000 Microns End X 1 0000 Microns End Y 0 2000 Microns Peak Concentration 1e 20 Reference Value 1e 16 Join Function Multiply Y Rolloff 7 Distance Gaussian Dist 1 Distance Error Function Dist 0 7 Rolloff Apply Cancel Figure 9 45 Downward Impurity Rolloff 6 To add the other half again click on the Impurities button see Figure 9 46 and set the following parameters e Impurity Arsenic e Start X 0 e Start Y
521. release the mouse button Copy Allows a polygon to be copied Select and drag the desired polygon to the new position and release the mouse button e Invert Mirrors a polygon on the current edit layer this can be either horizontally or vertically e Mask Allows attributes for individual mask elements to be altered After selecting point and click on a mask element on the current edit layer If the edit mode is phases or transmittances then the respective values for the element can be altered using the items on the key panel described 1n more detail in Section 10 4 6 Object Editing If the edit mode 1s Layers then a popup is displayed as shown in Figure 10 6 This allows the element to be moved to a different layer or resized or both by the specified amount Clicking on the Apply button puts the changes into effect y Mask Layer v WELL Resize 0 0 Figure 10 6 Mask Alter Attributes Popup e Label Attaches labels to polygons for use as electrode names A popup is displayed with a text field requesting label name once a mask object has been selected This popup also contains a checkbox enabling disabling the whole layer as a layer of electrodes This option copies the electrode definition from the Layers popup e Close path This is used to complete a partially drawn polygon e Group These options are used to cut and paste sections containing many polygons in single actions After selecting the cu
522. rent popup mode That is sliders can be dragged in Failure Analysis Synthesis or any other mode and plots are still updated interactively as described above 7 26 6 Failure Analysis Description The Failure Analysis feature can be used to predict which input parameter is the most likely cause of an error in production i e an output parameter or measurement that exceeds the specification or design limits Set up When the Production popup is set for Failure Analysis there is a list of all output parameters a text field for entry of failed values and START and STOP buttons There is also a Method item e Failed Values For each output parameter enter the failed value that was measured at the production site Press the Return key to submit this value to the list SILVACO International 7 87 VWF Interactive Tools e Method This controls the error tolerance method used in the failure analysis Higher orders are less error tolerant lower orders are more tolerant e Select Inputs From the set of input sliders choose the ones to be used in the analysis TONYPLOT tries to find which of these inputs is the most likely cause of failure in all outputs At least two inputs must be selected because the algorithm compares relative probabilities of failure cause e START Click on this button to start the failure analysis As each of the selected input parameters are tested its slider moves from the minimum to the maxim
523. rent shape drawing mode To display this popup select Define Objects The Object field on this popup indicates what type of shapes are to be drawn on the current edit layer Initially three options will be available polygon stick and serif Sei Maskviews Objects Current layer METZ second metal def Object v new Dimension 1 0 Title new Sides an Pena Figure 10 5 Objects Popup Polygons When the object type is set to polygon the mask objects are drawn as multi sided polygons of any shape A polygon is drawn by selecting the vertices of the polygon on the main layout screen After the selecting first vertex a line will be drawn connecting the most recent vertex with the current mouse pointer position A polygon is completed either by closing the polygon path by selecting the first point on the path again as the last point or by selecting the Edit Close path You can cancel polygon drawing any time before the path is completed by selecting Edit Cancel Polygon drawing obeys the rules for resolution spacing set up in the screen definition popup and the angle constraint rule set up in the properties popup If you use the Close path option to complete a polygon then the drawn path from the last selected vertex to the first vertex also obeys these rules which may cause extra vertices to be added SILVACO International 10 9 VWF Interactive Tools Sticks Sticks are used to draw single line polygons Sticks
524. require a finer grid namely where gradients exist Right click on the Add button and select Donors Then right click on the Mesh pull down menu and select MeshBuild again MeshBuild operates by building a mesh with instructions of mesh generation which have been modified when the Refine on Quantities was changed to include donor gradients Note Note that the mesh has changed to include a finer mesh where donor concentration gradients exist Click on Done at the bottom of the panel This action returns you to the main DEVEDIT panel If the existing panel 1s not the main panel click on Cancel or Done on the existing panel DEVEDIT returns you to the previous panel and ultimately to the main panel Near the bottom of the main panel the Number of Points and Number of Triangles are listed These numbers are useful in order to gauge the total number of points with the more subjective interpretation of the quality of the grid You can go back to Refine on Quantities The Scale defaults to Logarithmic which is appropriate for dopant concentrations Change the Sensitivity then rebuild the mesh MeshBuild and observe the effect on the total number of points The Sensitivity setting controls the extent of the gradient in which mesh points are added A higher setting reduces the density of the mesh A lower setting increases the mesh density The Transition value is the minimum value that is considered for Meshbuilding purposes e example a gradie
525. reviation for a card or parameter can be used as long as it uniquely identifies the card or parameter However a reasonable length should be used to keep names from becoming ambiguous when a newer version is installed 9 13 3 BASE MESH Starting point when generating a new mesh Syntax BASE MESH HEIGHT lt N gt WIDTH lt N gt Description When a mesh is created with the mesh card and the mode is mesh build mesh build creates a base tensor product mesh and refines the geometry impurities and mesh constraints The base mesh may not be regular to allow for the geometry of the device The original default for width and height is 100000 microns which means the structure will have 4 6 or 9 squares in the base mesh no matter the device size Parameters HEIGHT lt n gt h y Maximum height Ay of each rectangle in the base mesh in microns WIDTH lt n gt w x Maximum width 4x of each rectangle in the base mesh in microns Replaces Card BaseMesh Height lt n gt Width lt n gt See Also MESH CONSTRAIN MESH 9 13 4 BOUNDARY CONDITIONING Reduce number of boundary points Preferred Abbreviation bound cond or bnd cond Syntax BOUNDARY CONDITIONING WHEN lt C gt WHEN NEVER ONCE AUTOMATIC A MAXIMUM SLOPE lt N gt MAXIMUM RATIO lt N gt ROUNDING UNIT lt N gt LINE STRAIGHATENING lt N gt ALIGN POINTS lt BOOLEAN gt 9 60 SILVACO International DevEdit Description Set o
526. ribing Ge Boron Arsenic Potential etc See Generic Parameters for a more complete description PEAK VALUE lt n gt Value of impurity in the base box When using a 1D profile the peak value in the profile will be linearly scaled to match this peak value REFERENCE VALUE lt n gt REF VALUE Value of impurity at the given distance See concentration function and concentration coefficient for more information X1 lt n gt Left side of base box In microns X2 lt n gt Right side of base box In microns Y1 lt n gt Top of base box In microns 9 68 SILVACO International DevEdit Y2 lt n gt Bottom of base box In microns Z1 lt n gt Front of base box In microns Z2 lt n gt Back of base box In microns BASE 1 lt n gt lt n gt This is the left top corner of the peak impurity rectangle This parameter is depreciated Use x1 and y1 instead BASE 2 lt n gt lt n gt This is the right bottom corner of the peak impurity rectangle This parameter is depreciated Use x2 and y2 instead COMBINATION FUCTION lt c gt This describes how the x y and z comb funcrolloffs intersect Possible values are multiply interpolate or miter ROLLOFF Y lt c gt ROLLOFF X lt c gt and ROLLOFF Z lt c gt Possible values are e both e high ehigh premature step high p step e low SLOD e step premature high step p high e low premature step low p step e step premature low step p low premat
527. rmation using the industry standard GDSII and CIF layout format MASKVIEWS provides layout information to the simulators enabling any part of the layout to be simulated Currently supported simulators are e SSUPREMS3 A 1D process simulator MASKVIEWS provides an array of switches specifying whether each mask is present or absent at any selected point on the layout e ATHENA A 2D process simulator MASKVIEWS provides a set of mask regions for each layout level giving the start and end points of masks on any arbitrary cross section on the layout MASKVIEWS also provides information on how ATHENA should construct its grid It also specifies region names for use with DECKBUILD s Extract parameter extraction command and specifies names to be used as electrodes when passing the simulated region on for device simulation e OPTOLITH A 2D lithographic extension to ATHENA MASKVIEWS provides a 2D set of mask rectangles to be simulated by OPTOLITH rectangles are generated even if they are not drawn on the layout MASKVIEWS also allows phase and transmittance values to be specified for each mask element MASKVIEWS also provides features to allow layout experimentation such as e mis alignment e polygon oversizing undersizing e global rescales e region definition depending on combinations of present mask elements Productivity enhancements such as zoom and pan full on line help and manual and user specific start up properties are also avail
528. ro except for log which uses the value predefined in the Property called Log Zero If a function does contain an error TONYPLOT displays a notice box informing you of the type of error encountered A syntax error causes all function values to be zero An evaluation error causes just the offending data points to be zero 7 78 SILVACO International TonyPlot The derivative function dydx can take any two variables It also accepts distance to represent the x value i e for a vertical cutline dydx boron distance would give the derivative of boron concentration against depth 7 22 6 Function In TPCS Expressions can be evaluated in TPCS but TPCS does not perform the variable substitution the functions perform To evaluate an expression in TPCS use the following command TPCS gt eval expression where lt expression gt is constructed according to the syntax rules explained above The result is printed out below the input For example TPCS gt eval logl0 sqrt san 0 4 O 204792 LEC o gt When TonYPLOT plots functions it uses TPCS commands such as these to work out the new values Hence this can be used to check for computation or syntax errors or even for a quick calculator SILVACO International 7 79 VWF Interactive Tools 7 23 User Data Files 7 23 1 Overview User data files are ASCII text files that can be loaded into TONYPLOT and have a easy to read format This means that data from external
529. roduced if input parameters are looped and parameters can be extracted from the calculated results Multiple simulators can be called from within a single input deck and information transfer between simulators is transparent DECKBUILD allows precise user control of how an input deck is run with stop at pause restart and single step capabilities It provides a history function that permits you to backtrack to a previous point in the deck and then continue computation at this point This capability is extremely useful for interactively developing a simulated process flow specification DECKBUILD can invoke other simulator support tools such as TONYPLOT DEVEDIT and MASKVIEW DECKBUILD also works with the OPTIMIZER Optimization targets may include structural dimensions device parameters after a complicated electrical test and any intermediate outputs DECKBUILD was designed to minimize the time required to build up an input deck and to calibrate that input deck to first order accuracy An input deck may be built up in stages a line at a time if required A typical sequence of actions in the construction of an input deck might be as follows 1 Write Deck Fragment Simulate Fragment Plot Check structure Write second input deck fragment Simulate this second fragment Plot Check structure Find a mistake CoN OD OF FP CO WD Re initialize to the end of first fragment in the input deck SILVACO International 1 3 VWF Int
530. rom the scrolling list and enter a new name into the textfield labeled Name and press the Return key do not forget to press Return or else the new name will not be stored Repeat this for each that 1s to be changed and click on the Apply button The plot updates to show the new names 7 25 7 Cutlines When the Cutline tool is used on an overlay 2D Mesh plot a section is taken from each level TONYPLOT automatically overlays each of these when it creates the new cross section plot 7 25 8 Properties There are some TONYPLOT properties that apply to overlays These are accessed by choosing Overlays from the main Properties menu or Properties popup Although explained in the Properties section they are given here again for reference Creating When creating overlays from existing plots TONYPLOT just creates a new plot The old plots still remain in the view If the Deletes originals option is chosen however the plots that made up the overlay are deleted when the overlay 1s created Level colors As explained above each level 1s identified with its own color If the same color is to used for all levels choose Single for this property No of levels As explained previously the number of levels in a plot is limited However it is possible to override this limit and have has many levels as required in an overlay Use this switch to turn this limit on or off Display option Although the default setup is to use different
531. rrection to a model of that parameter The value shown as the error delta is added to values obtained from a model to shift the response curve to a more accurate position The nominal case is used for this calibration De when all inputs are at their nominal vales and the result applied for all modeled values 7 26 13 Optimizer Setup The Synthesis mode of the Production popup provides two synthesis methods the Levenburg Marquadt optimizer is one of these choices and some parameters specific to this method can be customized as required To access the parameters choose Optimizer Setup from the Define menu found on the Production popup A popup appears allowing customization of these parameters default values shown in parentheses Max no of iterations 100 Norm of gradient bound 1e 6 Sum of squares difference 1e 11 Marquadt initial value 0 1 Marquadt scale factor 2 Marquadt upper bound 1000 Switch 0 1 Maximum Jacobian 100 Maximum RMS error 1 Maximum average error 1 Maximum maximum error 1 Maximum iterations 4 Noise level 1e 18 Error ceiling 100 When all changes have been made click on the Apply button to store them Click on Reset to set the values back to their previous settings 1 92 SILVACO International TonyPlot 7 26 14 ASA Setup The Synthesis mode of the Production popup provides two synthesis methods Adaptive Simulated Annealing is one of these choices and some param
532. rrent Source photo current SILVACO International 5 17 VWF Interactive Tools 5 18 optical wavelength position xhole mobility time step magnitude time step number total integration time cutoff frequency distance along line norm intensity integrated e conc integrated h conc channel sheet conductance photon energy photon density gain Spontaneous emission rate electron mobility hole current generation rate lattice temp electric field recombination rate displacement current electron conc hole conc electron temp hole temp relative permitivity potential SILVACO International DeckBuild Extract SDEFOCUS AXIS da value DEFOCUS da lt vwalue lt CURVE NUMBER DERFOGCUS CRITICAL DIMENSION AXIS da value CDs da value CURVE NUMBER Cps DOSE AXIS da value DOSE da value lt CURVE_NUMBER gt DOSE lt CURVE_NUMBER gt Integer specifying which curve when multiple curves are present ina DA fortmnat files 7 lt MATERIAL gt Sa Leon Oxide S10 2 Oxynitride Niterde Si 3N 4 Eois I eor Photoresist Barrier Aluminum Tungsten Titanium Platinum Cobalt Tungsten Silicide Titanium Sulterae Platinum Silicide Cobalt Srlrornde GaAs AlGaAs InGaAs SiGe InP 6H S10 4H Sic BC o Be Germanium material lt QSTRING gt lt IMPURITY gt Boron SILVACO International 5 19 VWF Interactive Tools Phosphorus Arsenic BE Antimony Sab qon Za TIO Selen
533. rst layer of silicon for a 1D cutline at x 0 1 extract name Max 1d Net conc max conc impurity Net Doping material Silicon mat occno 1 x val 0 1 region occno 1 Extract the peak concentration of phosphorus within any p n regions default for all materials using a 1D cutline at x 0 1 extract name Max ld phos conc max conc impurity Phosphorus malerialk ALEY val 0 I Extract the minimum concentration of boron within any p n regions of the top first layer of silicon for a 1D cutline at x 0 1 extract name Min ld bor conc min conc impurity Boron material Silicon mat oceno 1 x val 0 1 2D Max Min Concentration Extract the peak concentration of net doping for the entire 2D structure extract name Max 2D net conc 2d max conc impurity Net Doping material A11 Extract the peak concentration of boron within the silicon material in the 2D box limits defined extract name Max 2D bor conc 2d max conc impurity Boron material Silicon y min 0 1 y max 0 9 x min 0 2 x max 0 6 In addition to this statement you can add the interpolate flag When present this flag causes the extraction to perform interpolation at the edges of the specified bounding box for min max concentration and position Extract the minimum concentration of phosphorus for all materials within the 2D box limits These limits are defined by user defined y coordinates and x values corresponding to loaded MASKVIEWS cutline information f
534. ructure File To save this file pull down the File menu and choose Save as Specify a name to save the file such as test str and click on the SILVACO Standard Structure File button Then click on Save File to produce a file readable by all Silvaco 2 D Simulators SILVACO International 9 45 VWF Interactive Tools 9 11 IMPURITIES 9 11 1 Viewing Impurities Currently only net doping can be viewed To view net doping pull down the Show Net Doping menu on the base window This menu controls pixel resolution of the displayed net doping contours To display the net doping legend pull down the Net Doping Legend menu and select a location to place the legend Doping at 1e 10 level is considered to be approximately zero for graphing purposes 9 11 2 Impurity Definition Impurities can be read in when a structure file is loaded or defined using a source line or box and rolloff function or profile A structure file is a 2 D or 3 D impurity profile that 1s used to extrapolate on to the final mesh these do not show up in the User Impurities panel list A new impurity distribution can be easily added by performing the following steps Enter the add impurity mode 2 Define a impurity source area 9 Define the rolloff directions 4 Define the rolloff functions 5 Define a join function 9 11 3 Impurities Loaded From A Structure When a structure file 1s loaded the complete mesh 1s temporarily saved When the device 1s saved
535. ry listing by type can displays Auto refresh Yes Indicate names H Figure 3 2 Attributes Popup The following attributes can be customized e Directory listing Specifies whether to sort the icons in the file window in order of their file type by type or alphabetically by name e Icon displays Allows the selection of color or monochrome icons when used on color display systems This option is not available on monochrome systems e Selected Icon If you select keep then file icons highlighted for use with applications will remain highlighted after the application has been started If you select deselect then the file icon does not remain highlighted e Auto refresh This toggles the Auto Refresh function Auto Refresh periodically scans the current directory checks for files that were created or removed and updates the files window accordingly e Indicate names Specifies whether the name and type of the file will be displayed at the foot of the window as the pointer passes over the icon s Clicking on the Save button saves all of the options in the file SHOME masterrc The saved attributes will be used the next time MANAGER is started SILVACO International 3 3 VWF Interactive Tools 3 2 6 Applications The Applications popup Figure 3 3 is used to configure the Silvaco applications Standard applications Deckbuild Tony plot Maskyviews Compressor C E z Label Printer Icon print
536. ry time an iteration finishes If any of the parameter or target names are changed the changes are reflected in the Results worksheet 6 7 2 Sensitivity The Results screen also displays a sensitivity calculation performed as the optimization progresses The sensitivity of each target is displayed next to the target s value column The sensitivity is calculated as the percentage change in the target value divided by the percentage change in a single input value The sensitivity displayed on a given row is the result of changing the single input parameter on that row which differs from the baseline calculation the topmost result row Since the OPTIMIZER first calculates the baseline values and performs the sensitivity calculation on each parameter in turn thereafter trying to vary all parameters as necessary the sensitivity results are displayed only on the second through nth row of the results worksheet where n is the number of parameters plus one SILVACO International 6 23 VWF Interactive Tools 6 8 Worksheet Editing 6 8 1 Overview The Worksheet allows for editing cells and typing values directly into the cell contents Some cells however depending on the worksheet mode are read only and cannot be edited 6 8 2 Numeric Values To edit a numeric cell value on a worksheet 1 Position the pointer over the cell The cell appears indented 2 Click SELECT once A text caret appears in the cell Figure 6 25 3 Edit
537. s extract names Lob max max ti colLrector i base SILVACO International 5 31 VWF Interactive Tools You can also find the Y value on a curve for a given X value and the other way round For example to find the collector current Y for base voltage 2 3 X use extract name Ic Vb 2 3 y val from curve abs v base abs i collector where x val 2 3 EXTRACT uses linear interpolation if necessary If more than one point on the curve matches the condition EXTRACT takes the first one unless you use the following syntax to specify the occurrence of the condition This example would find the second Y point on the curve matching an X value of 2 3 extract name Ic Vb 2 3 y val from curve abs v base abs i oolleggtor where x val 2 3 and val occno 2 The condition used for finding an intercept can be a value or an expression and therefore use the min max and ave operators The following command creates a transient time against drain gate capacitance curve and calculates the intercepting time where the capacitance is at its minimum value extract name t at Cdrain gate Min x val from curve time c drain gate where y val min c drain gate In addition to finding intercept points on curves you can also calculate the gradient at the intercept specified by either a Y or X value as shown below extract name Slope_at_x grad from curve v gate i drain where x val 1 5 extract name slop
538. s An experiment with N parameters has N 1 trials two level full factorial This type does a simulation corresponding to every node of the N dimensional hypercube An experiment with N parameters has 2N trials two level half factorial This type does half the simulations of the two level full factorial and no two nodes are on the same edge An experiment with N parameters has 2 1 trials three level full factorial This type does a simulation corresponding to every node and every half point of the N dimensional hypercube An experiment with N parameters has 3 trials face centered cubic This type does a simulation corresponding to every node Every point where an axis intersects the hypercube and the center point An experiment with N parameters has 2N 4 2N 1 trials circumscribed circle This type is similar to the face centered cubic type but the axis points now lie on the surface of the hypersphere that passes through the hypercube node points i e all points are equidistant from the origin An experiment with N parameters has 2N 4 2N 1 trials box behnken The design matrix for this simulation 1s based on a balanced or partially balanced block design There is no easy relationship between the number of parameters and the number of trials in the experiment For example an experiment with seven parameters requires 57 trials and an experiment with nine parameters requires 97 trials But an experiment with eight parameters 1s part
539. s turning on the check box sets the default value for regions made of that material type overriding the All Regions value for those regions If the check box is set for a particular region the value to the right of the check box applies only to that region Note When the check box is turned off the value displayed is the current default value for the current score 9 42 SILVACO International DevEdit Finally we get to the constraints that can be imposed max angle Maximum angle of a triangle in the specified region or scope In certain cases limitations in the mesh build algorithm require a few triangles to be obtuse no matter what the maximum angle is set to This keeps mesh build from creating an infinite number of triangles Work is currently ongoing at Silvaco to resolve this restriction If the angle is less than 180 degrees the maximum connectivity of a node is 12 max triangle ratio Maximum ratio of a triangle s height and width max height Maximum height of a triangle max width Maximum width of a triangle min height Triangles with height less than this value are not refined in the Y direction during impurity refinement Some triangles may be shorter than this value to allow for geometry min width Triangles with width less than this value are not refined in the X direction during impurity refinement Some triangles may be narrower than this value to allow for geometry 9 9 5 Adaptive Meshing Adaptive me
540. s Disabled targets are ignored during the optimization Disabling is often useful when a large number of targets have been entered There is a need to concentrate on an important subset of targets without deleting the remaining targets from the worksheet To disable a target 1 Position the pointer anywhere in the row that needs to be disabled and double click the SELECT mouse button on the row The row is selected 2 Choose Toggle from the Edit pulldown menu The selected row is grayed out on the worksheet and its values are be frozen To enable a disabled target follow the same procedure precisely beginning with a disabled row During an optimization run the OPTIMIZER does not monitor or count the error terms from disabled targets 6 18 SILVACO International DeckBuild Optimizer 6 4 5 Folding Columns The OPTIMIZER allows you to fold or hide any column or columns on the worksheet This may be useful when there is a need to see several columns on opposite sides of the worksheet without having to horizontally scroll back and forth To fold a worksheet column 1 Choose Control from the View pulldown menu and the Target control popup will appear Figure 6 21 y Target control Mode v enable Target columns Line number LT J Figure 6 21 Target Control Popup Enable Mode 2 Change Mode to enable on this popup 3 Click SELECT on any columns that are to be folded in the scrolling list Columns remaining
541. s a string delete the region name with the lowest region number If namez is used delete all region names ID lt n gt A region number that uniquely identifies the region to be inserted replaced or deleted ID lt c gt Identifies the region with name c to be replaced or deleted If no region has name c insert a new region with name c and the lowest unused region number If two regions have name c the region with the lowest region number will be replaced or deleted NAME lt c gt Deletes all regions with name c when in delete mode Otherwise the region being replaced or inserted will be given the name lt c gt MATERIAL lt c gt Specifies what material the region is made of 1 e Silicon Aluminum AlGaAr etc See Generic Parameters for a more complete description COLOR lt n gt COLOUR Used to display region during DEVEDIT in X windows mode This is an RGB bitmap with eight bits per color DEVEDIT has only a limited subset of these colors therefore the closest match is used Some basic colors can be specified by name such as red green blue yellow cyan magenta black and white See Generic Parameters for a more complete description PATTERN lt n gt Used as fill pattern for display region in DEVEDIT in X windows mode See Generic Parameters for a more complete description 9 78 SILVACO International DevEdit POINTSz point 2d list Used for location of points making polygons that describe the
542. s are used the next time that program is started DECKBUILD automatically appends specific arguments to the ones that were entered For example DECKBUILD appends a filename to the Plotter argument whenever the current structure is plotted and appends a layout filename when MASKVIEWS is started For this reason it is unnecessary or wise to put specific filenames in the argument lists When encountering a tonyplot statement during execution DECKBUILD also automatically determines if a structure is 3D and use the appropriate 3D plotter argument dy Deckbuild Main Control Category 4rquments Plotter tony plot 3D Plotter tonvplot3d Layout editor maskviews pretty Save as defaults Gute MaskViews Select cutfile Mo active ste Figure 4 16 Main Control Arguments 4 26 SILVACO International DeckBuild 4 6 Execution Control The execution control buttons grouped between the text and tty subwindows when the tty subwindow is enabled control how the input deck is sent to the simulator It is possible to step through the deck a line at a time run up to a point run the entire deck or even back up and continue DECKBUILD provides the features needed to start run and quit the simulation 4 6 1 Execution Concepts DECKBUILD always remembers the current line in the input deck The current line is the line that is next sent to the simulator and is always shown next to Line on the right side of the control panel It is up
543. s comprised of a series of Rays A ray is a section of a beam between reflections and refractions For example if a beam originates from outside a structure enters the structure is refracted travels to the bottom of the structure gets reflected and then moves back to the top of the structure it consists of three rays The Light popup Figure 7 12 appears if Light is chosen on the 2D Mesh plot popup and the Light button is selected in the Define menu Tonyplot Light Rays Materials Show rays as Solid Lines Silicon Conductor Color function 22 wavelength W wavelength Power Max reflection Beam number Apply Reset Reflection index Figure 7 12 Light Rays Popup The items on the popup are e Beam When beams are present in the structure they are shown as selectable numbers on this item Any of the beams can be shown at once by selected the required beam numbers If no light information is present in the structure the option None is shown to show that there are no beams e Materials The part of the structure on which light beams are drawn can be limited to regions of a certain material If no materials are selected in the list this is treated as all being selected the default If the beams should not be plotted on any material deselect all beam numbers e Show as There are two ways to show light beams either as lines that show the path of the beam or solid areas that also show the
544. s indented 2 Click SELECT once A text caret appears in the cell 3 Edit the cell value The worksheet understands normal keyboard input plus Control U which erases the cell contents Enter the new value 4 Finish the edit by pressing Return The new value remains in the worksheet cell When the cell is in read only a warning message is displayed in the lower left hand corner of the worksheet See Section 6 8 Worksheet Editing for more information on using the worksheet 6 5 3 Saving The Setup To modify the setup data and to save for future runs choose Save Setup from the File menu The setup information is saved in HOME masterrc 6 20 SILVACO International DeckBuild Optimizer 6 6 Graphics 6 6 1 Overview The OPTIMIZER maintains a run time graphics visualization system that allows for tracking the progress of the OPTIMIZER over its iterations and to evaluate its current status To access graphics set the Mode to Graphics see Figure 6 23 iy Deckbuild Optimizer optex02 1n o0pt Current Errars Ims nad Total iterations 18 max i A e Average iteration time sect 114 0 Total elapsed time sec 2095 95 Current rms 1 11656 ave 0 61799 max 1 94465 Parameters Targets Yt adjust implant dose Vt curve SEA SITE 3 18 14 ee Current valuez3 55354e 11 Average error 0 62 value target results mg Vt adjust implant energy Current Yalue 0 6341 06 value
545. s manual for TONYPLOT3D PDF format Displays the release notes for TONYPLOT3D PDF format 5 VWF Interactive Tools 8 3 2 Main Toolbar Options Table 8 4 shows the main toolbar options Table 8 4 Main Toolbar Options Leg File Open EE KEE EE DEE a israel 1 file browser is displayed that allows you to load a 3D structure file Centers the structure in the Plotting Area with a pre defined pose matrix Object Displays a hierarchy of the objects in the current scene and structure Editor Once this hierarchy is displayed you can then perform actions such as Hide or Show For more information about the Object Editor see the Section 8 5 1 Object Editor Cutplane Starts the Cutplane Tool and shows the 2D cut as it would be exported to TONYPLOT Starts the Probe Tool and shows the picked object using the left mouse button Ruler Starts the Ruler Tool and shows the quantities of the picked object using the Control key and the left mouse button Configure Opens the Display Modes Window This is used to change the display Display mode and viewing parameters 8 6 SILVACO International TonyPlot3D 8 3 3 Plot Control Toolbar Options Plot control toolbar options are described in Table 8 5 Table 8 5 Plot Control Toolbar Options Zoom into the structure Zoom Out Zoom out from the structure Show Top Show the structure from the top Show Bottom Show the structure from the bottom Show the structure from the
546. s nominals When this button is clicked on the current position of all selected input sliders is used as a new nominal value for those inputs Nominal values can also be set from the Input Parameter Ranges popup described later e Fix Y Axis When you toggle this option the y axis ranges of the selected RSM plots remain when you move the input sliders 7 26 5 The Input Sliders Any input slider that is selected Ge the toggle is green can be dragged left and right to interactively change the current value of that input As the value changes any selected RSM plots in the current view updates to reflect these new values Any selected RSM plot is updated as follows e Any 1D RSM plot that has the input being plotted on the X axis moves the gunsight along the curve to match the changing X axis value If the input is not the X or Y quantity the whole curve will be recomputed for the new value e Any 2D plot that doesn t have the input as either the X or Y axis quantity is redrawn with the contours recalculated for the new input value e Any 3D plot that doesn t have the input as either the X or Y axis quantity is redrawn with the contours and surface recalculated for the new input value Note Since plots are updated interactively it is usually preferable to set the RSM plot density to low This speeds up the calculations and greatly improves the response time This interactive control is available regardless of the cur
547. s red for example the level one is red the first cross section profile is red region 1 is red and so on If more than twelve colors are needed the color sequence repeats at one SILVACO International 7 63 VWF Interactive Tools 7 19 9 Sequence Marks Graph lines are represented by Lines and Marks TONYPLOT uses different mark types to represent either quantities or levels These can be defined in this popup The types are Cross Circle Plus Triangle Square and Star This popup also allows changing of the size and width of the marks from a scale of 1 to 6 in size and 1 to 3 in width 7 19 10 Key Options 7 64 SILVACO International TonyPlot Each key position item provides eight options If you select Off then that key will not be drawn If any of the six specific positions is selected the key is drawn in that position in the plot If the icon with the arrow is displayed then the key has been positioned by hand and is in none of the six standard locations e Contours There are three contour keys one for each set There are three items to control each one separately e Regions Used in 1D and 2D Mesh plots to indicate the color used to distinguish each material region or region parameter e Graphs The Line key for any graph plot showing line colors and mark types e Stats Key for identifying information on Statistics plots e Vectors Vector key for 2D Mesh plots Levels Level key for
548. s required The abbreviated layer name should be one of the names shown on MASKVIEWS key panel If a mask polygon is present on the layer at the point and the layer field attribute is set as Clear then the line deposit photoresist thickness value is inserted in the deck at this point The photoresist thickness value inserted is the value specified in the layers definition popup The deposit statement is also inserted if no masks are present and the field is Dark A strip statement can be used later in the deck to remove the photoresist If the statement mask abbreviated_layer_name reverse is found in the deck then the effect of the field attribute is reversed A Cutline section for use with DECKBUILD is written after a point on the layout has been selected A summary mask display is shown if the Display masks property has been set An information message is displayed indicating the name of the output file written 10 5 3 ATHENA If you set ATHENA as the target simulator MASKVIEWS generates a series of etch regions along a line corresponding to the presence and absence of mask elements at those points on the line After clicking on the Write file button the two end points of the simulated section are selected on the layout If you enable the Cutline edit property a popup will appear showing the coordinates of the selected line and three buttons labeled View Write and Done The selected line remains on the layout and can be m
549. s sign shaped crosshairs The buttons allow new cursors to be created existing ones to be deleted selection between existing cursors the current cursor is shown in bold and the size of the current cursor to toggle between small and full screen The four directional buttons move the current cursor and the central button moves the current cursor directly to the marker e Marker The marker can be moved along its current graph line by moving the dial To dial is moved counterclockwise by clicking in the left half of the button and clockwise by clicking in the right half Skip moves the marker from one curve to the next cycling back to the first curve when the last one has been reached Options Several options can be accessed from the middle panel Line 1 and Line 2 turn on or off a line that joins the marker and cursor Various geometry information about the lines is displayed on the popup and on the key Reticule turns on or off the plot grid the same grid that is shown using the Annotation popup and Key toggles the HP4145 key on and off Quit closes the HP4145 emulator and restore the plot to normal e Information The lower panel gives position information for the marker and current cursor and geometry information for both lines 7 16 6 Integrate The Integrate tool Figure 7 28 provides a facility for measuring the area under a single plot curve or the area between two curves The X interval over which the area is calcula
550. selected 3 Choose Add from the Edit pull down menu To do this move the pointer over the Edit button click MENU and select Add Figure 6 14 A new row is inserted into the Target worksheet for the selected extract statement Figure 6 15 The rows are always ordered by line number 6 12 SILVACO International DeckBuild Optimizer 4 Enter a target value for the new target Target value entry depends on the extract value type point or curve Both types of target value methods are explained on the following pages iy Deckbuild Optimizer optexD2 in o pt edited Line number Target name Target type A value Target value OpIMIZEE value linear VI curve linear linear linear linear linear linear linear linear linear end error 0 01000 WMextract name vt Cxinterceptimaxslopetcurvelabs yvg abstidijad abstvdi 2 0 extract name wtcurwe curvetabs vg abstid autf vtcurve Figure 6 14 Targets Added to Worksheet SILVACO International 6 13 VWF Interactive Tools y Deckbuild Optimizer optex02 in opt edited Mode Targets SEHE W Targets E alue Delete PPY vg vs ld Locate Toggle ge Select All Delete All Before Select All From File Sort A Normalize X Figure 6 15 Target X Y Data Menu Defining a Point Value Target For point targets enter the target value directly into the Target value column See Section 6 4 3 Editing A Target for more information Repeat this
551. selected on the scrolling list are shown The others are folded and not shown Press Apply to apply changes Target Fields e Line number The line number that the target is on in the input deck The line number is automatically updated when the input deck is edited e Target name The name of the target You can redefine the name using the Target control popup e Target type Either linear or log The target type determines how the Optimizer computes the error term Log type targets should be used where the target value is extremely small e X value The X axis value of an x y coordinate pair It 1s only used by curved targets e Target value The optimization target value Y axis value for curved targets Optimized value The current value of the extracted simulated data e Error 9o The percentage error between Target value and Optimized value e Weight The target weighting factor The weight is multiplied by the actual error to determine the apparent error A value of 1 indicates that the Optimizer shall use the actual error a value of 0 5 indicates that it should use only half the actual error Values between 0 and 1 make the target less sensitive Therefore it is subject to wider error tolerance while values greater than 1 make it more sensitive and force the simulated data to smaller error tolerance For instance a weight of 2 0 with a setup maximum error of 5 0 would force a target to have a maximum actual
552. series of statements line x loc location spac spacing which defines grid spacing at a specific location MASKVIEWS generates line statements for each mask edge on enabled layers ATHENA requires a grid line to be present at an etch point It can also specify spacing points inside and outside of the mask region Figure 10 9 This allows fine grids to be created where known mask edges lie decaying to courser grids at some point further away SILVACO International 10 15 VWF Interactive Tools Poly Grid Outside Edge Grid Inside Edge Spacing Distance Distance Spacing 0 1 um 0 5 um OS Figure 10 9 Horizontal Grid Spacing Parameters The Vertical grid popup allows vertical distance and spacing lines to be modified using the Distance and Spacing slides A line is added to the list by clicking on the Add button and the currently selected item is removed by clicking on Delete The list is automatically sorted by increasing distance If you enable the cutline edit mode the Cutline popup will contain a maximum depth field which you can use to specify the largest line y distance If write to deck is not enabled grid information is written to the output information file in a form readable by DECKBUILD Layout Experiments Layout experiments can be performed with ATHENA decks using the Loop variables popup Figure 10 10 displayed by selecting Define gt Looping This allows mis alignments and delta cd values to
553. set variables and how to substitute with each other and in simulator syntax set time 30 set temp 1000 set press 1 0 set env nitro set pi 3 1415 Sep pir M um cp NOS diffuse time time temp Stemp press press Senv hcl pi 2 SILVACO International 4 71 VWF Interactive Tools The following statements extract the thickness of the top layer of oxide in a structure and etch back that thickness plus 0 05 micron extract name oxide thickness thickness oxide set etch thickness S oxide tnickness 10000 0 05 etch oxide dry thickness Setch_thickness Note The thickness is measured in angstroms so it is converted to microns first Variable names that contain spaces generated by extract statements must be quoted for substitution and the must precede the quoted string as shown For variable names with no spaces quotes are optional The following statement will remove all existing variables set clear The statements below show the use of the nominal flag extract name oxide thickness oxide thickness thickness bad syntax oxide set oxide thickness 0 5 nominal etch oxide dry thickness Soxide thickness For this example if the extract statement was successful the value of oxide thickness would be set Therefore the nominal set statement would be ignored But the extract syntax 1s incorrect so the extract statement never creates the result variable and oxide thickness is set by the nominal set state
554. settings of all parameters specified in the highlighted text and makes the popup s visible A Few Points to Observe e Parse Deck does not change the settings of parameters that are not specified If parsing the line implant boron the values of energy and dose for example will not be altered from whatever previous value they had on the popup e Parse Deck parses any highlighted text whether it is in DECKBUILD s own text subwindow or in a separate program If in DECKBUILD s text subwindow the usual case DECKBUILD automatically extends the selection of a partial line to cover a full line e Highlight as much text covering as many command statements as desired DECKBUILD configures and brings up all appropriate popups for the current simulator If you highlight more than one of the same statement the last has priority e DECKBUILD ignores all text that it does not understand 4 30 SILVACO International DeckBuild 4 7 3 Process Simulators Figure 4 18 shows the Commands menu for a process simulator ATHENA Deckbuild 43 8 Release NONE dir main mrhappy marting dy ATHENA Mesh Define Adaptive meshing Mesh Initialize Process 4 Process Structure Implant File 140 Diffusa Deposit p Notes Etch b Models Polish t Templates Photo Extract Parse Deck gt Epitaxy E ATHENA y Figure 4 18 Command Menu of ATHENA Writing a Process Input Deck Since proce
555. sh In mesh build mode creates a tensor product mesh using base mesh parameters See base mesh card for more details In tensor product mode it creates a tensor product mesh using all currently existing boundary points those remaining after boundary conditioning 9 Refines on geometry Any points not part of the base mesh are now handled 4 Refines on impurities See impurities refine card 5 Refine on mesh constrains See constrain mesh card Parameters mode mesh build tensor product Examples build mesh using mesh build algorithm mesh mesh mode mesh build mesh mesh build build a first level tensor product mesh mesh tensor prod delete existing mesh mesh del See Also BASEMESH BOUNDARY CONDITIONING IMPURITY REFINE CONSTRAIN MESH 9 13 14 MIRROR Mirror the device Syntax MIRROR SIDE RIGHT LEFT TOP BOTTOM AUTOMATIC SPLIT lt BOOLEAN gt Description Mirror the device by creating a mirror image of the device in the given direction and joining the image to that side Parameters SIDE RIGHT LEFT TOP BOTTOM Direction to mirror the device The default direction is right 9 74 SILVACO International DevEdit AUTOMATIC SPLIT lt boolean gt AUTO SPLIT If the region does not touch the mirrored edge the region will be split into two discrete regions If auto slpit false the region is disjointed but remains one region The default is auto split true 9 13 15 MOVE Mov
556. sh is not needed if you are just trying to remesh a device The default is mesh true accept mesh commands and load structure file meshes 3 D Parameters Z1 lt n gt If a 2D region is loaded convert to a 3D region using z1 as the starting z plane Z2 lt n gt If a 2D region is loaded convert to a 3D region using z2 as the ending z plane Z lt n gt lt n gt z1 z2 as one parameter Replaces Card LoadFile FileName lt c gt Type lt c gt Z lt point2d gt Z12 n Z2 lt n gt See Also gt TRUCTURE 9 72 SILVACO International DevEdit 9 13 12 JOIN Join two devices together Syntax JOIN SIDE RIGHT LEFT TOP BOTTOM FILE NAME lt C gt ADJUST lt N gt SURFACE ALIGN lt BOOLEAN gt SPACER THICKNESS lt N gt A SPACER MATERIAL lt C gt MIRROR lt BOOLEAN gt AUTOMATIC JOIN lt BOOLEAN gt Description Combine the device currently loaded in DEVEDIT and a device stored in a file into one device Parameters SIDE RIGHT LEFT TOP BOTTOM Side on which to join the new structure onto The default is side right FILE NAME lt c gt Name of the file containing the device to be joined in DEVEDIT command format or Silvaco standard structure file format ADJUST lt n gt If side right or side left adjust the device down or up if negative a specified amount before preforming join If side top or side bottom adjust the device to the right or to the left if negative the specif
557. sheet understands normal keyboard input plus Control U which erases the cell contents Enter the new value replacing the existing value 4 Finish the edit by pressing the Return key The new value remains on the worksheet cell When the cell is read only and cannot be edited a warning message is displayed in the lower left corner of the worksheet See Section 6 8 Worksheet Editing for more information on using the worksheet Editing The Response Type Response type 1s either linear or log Response type should be set to log if the extracted results vary logarithmically with the input parameter To change the response type 1 Position the pointer anywhere in the row and double click the SELECT mouse button to capture the row The row appears raised 2 Choose Lin Log from the Edit pull down menu The selected row s response type are toggled Since Lin Log operates on all selected rows you can select and toggle multiple rows at the same time SILVACO International 6 7 VWF Interactive Tools Editing The Parameter Name The OPTIMIZER forms the parameter names when entered by appending the parameter name shown next to the checkboxes on the Parameter define popup with the title field on the popup By default the title is the command word first word on the line For example the parameter dose in an implant statement would be called implant dose on the worksheet If you type LDD Implant as the title the parameter name will b
558. shing is an efficient way of adding grid points in areas of interest semi automatically without having to add too many points The purpose is to search for steep gradients over a solution and to add grid points locally to these regions A mesh can be adapted after creating a basic boundary compliant mesh A mesh can be adapted to the gradient of any impurity quantity on the mesh To generate an adapted mesh select the Refine on Impurities option from the Mesh menu 9 9 6 Refinement Refinement on impurity concentration gradient control shows the control screen for impurity defined mesh refinement The Minimum Mesh Spacing control refers to the minimum size of a mesh element after adapting A mesh is not be refined down below this entered value even in the case of large concentration gradients Available impurities can be selected from the Add Menu option All impurities present in the current structure are available to mesh with i e 1n the case of a SPISCES2 solution a large number of impurities are available including Electron Temp doping conc potential etc Any number of impurities can be selected from this menu for addition to the scrolling list of impurities Refinement on impurity concentration gradient control show three impurities boron arsenic and phosphorus The concentration gradients of these selected impurities 1s used to adapt the mesh Each impurity has its selected weight i e boron 0 85 Each selected impurity can be weighted
559. shpin slides into its hole as the pointer moves to the left Invoke items from a pinned menu by clicking SELECT over the desired item To unpin a menu click SELECT over the pin The pin is removed and the menu disappears Deckbuild Y3 3 NONE dir tmp_mnat writer hankm EH OG SSUPREM3 Initialize y Process Process gt Implant Electrical p Diffusa File 10 Deposit Notes Etch Models Epitaxy Extract Photo Parse Deck co Co Tue Tun 15 15 16 44 1333 Commands input from file dev tty SSUPREN3 gt L SSUPREM3 started SSUPREMS p Figure 4 4 Pinned Commands and Process Menus for SSUPREM3 SILVACO International 4 7 VWF Interactive Tools 4 2 4 Running A Deck A SSUPREMS deck fragment for initial MOS processing is shown in Figure 4 5 which shows this deck in DECKBUILD Because DECKBUILD was started with the s3 option SSUPREMS should be running and displaying a prompt in the tty subwindow If so you can now run the deck d Deckbuild 3 1 6 Alpha NONE edited dir tmp mnt Zwriter hankm A E go ssuprem3 Grow pad oxide 4004 init silicon orient 100 thick 3 00 boron 1 0e15 spaces 150 Grow field oxide diffus time 40 temp 1000 dryo2 press 1 00 hcl amp Implant boron to increase field region doping implant boron dose 1 0e13 energy 150 gauss rotation 30 A rFus time 180 temp 1000 weto2 press 1 00 hc1 0 Co Tue Now 24 13
560. sing Return in a cell SILVACO International 6 25 VWF Interactive Tools 6 9 File I O 6 9 1 Overview When an optimization run 1s finished the OPTIMIZER allows storage of all pertinent data to disk You can load an optimization file at any later point to initialize the OPTIMIZER with all the saved target and parameter data The Setup data 1s stored independently For procedures on Setup data see Section 6 5 Setup 6 9 2 Creating A New File To create a new optimization file 1 Move the pointer to the File menu button press the MENU mouse button and select Store as New File Figure 6 26 The Store popup will then appear Figure 6 27 Note The current directory is listed on the Store popup 2 Move the pointer into the Store window and enter the name of the preferred file By default the file name is the name of the current input deck with opt appended 3 Click on File Store as New File and an ASCII format optimization file will be saved This file contains all parameter and target information y Deckbuild Optimizer optex02 1n 0 pt Load File Line number Par Save Current File RESPONSE s pimized Initial value BEER Store as New File E type value value vt Clear all ia em Length etch pix linear SD implant dose SD implant energy linear E oH Deckbuild Store Directory elvis riw deckhbuild File optexo2 in opt A ee M M M insi File loaded OK Figure
561. sion time in ATHENA permits optimizing against a Vt curve simulated with ATLAS DECKBUILD also provides a seamless integration with DEVEDIT and its adaptive meshing capabilities In addition the UTMOST interface allows Silvaco s parameter extraction package UTMOST III to load data from one of more device simulation runs and perform SPICE model parameter extraction DECKBUILD offers real flexibility with the ability to use UNIX system commands within simulation decks and the added feature of executing simulations on remote hosts while DECKBUILD is running locally Two new features are the communication interfaces to the new MERCURY interface tool and EXACT When a MERCURY tool is started from DECKBUILD a communications pipe is enabled to allow MERCURY decks to be written directly into DECKBUILD for execution EXACT uses the new input output pipe command line options to send a simulation deck for execution EXACT then receive extracted results from DECKBUILD Note Pipe in this context means a conduit that transfers data between two program DECKBUILD also contains many other convenience features e A built in tool palette allows interactive plotting of the current structure e Instant substitution of a different cut line set from the layout editor e Full interactive control of the simulator including a history function that allows you to back up in the deck and try again e Interactive cut and paste to either the simulator or the text editor
562. sired plot Using scientific notation in functions De le23 requires that the mantissa have a decimal point De 1 0e23 otherwise it does not work The Functions popup is used to define functions It can be displayed from the main Properties menu or from buttons marked Functions that appear on each of the three types of Display popup Once defined a function is plotted by choosing the name of the function Function 1 or Function 2 from the relevant control item on the Display popup 7 22 2 Defining Functions The Functions popup 1s split into two sections the top section allows function macros to be set up and the lower section is where the functions are actually defined Note that there are two types of function e Graph functions These are used on XYGraph plots only and are defined in terms of graph electrical quantities Impurity functions These functions can be plotted 1n Mesh plots and Cross Section plots only and are defined in terms of impurities Two of each type of function 1s supplied and either or both can be shown on any plot It 1s possible to nest functions by including the name of one function as a variable in another 7 22 3 Plotting When Function 1 or Function 2 are chosen to be plotted TONYPLOT evaluates the results of the function at each data point and stores these values in the data attached to each plot level Then the function can be drawn along with any other quantity also selected Ex
563. sition of the cutline on the plot as shifting does To use the movie feature select the mesh plot that contains the cutline 7 16 2 Ruler The Ruler tool can be used on any type of plot It provides coordinate geometry information of any line drawn over a structure To use the Ruler Figure 7 24 select the plots in which measurements are to be taken and choose Ruler from the Tools menu Tonyplot Ruler A START 0 172 END 0 3588 DELTA 0 916 INTERCEPT 0 902 LENGTH 1 38 ANGLE fee SLOPE 4 66 INV SLOPE DL Type Temporary Permanent Dismiss Figure 7 24 Rulers Popup The ruler position is defined by dragging the pointer across the plot to define a box and line Holding the SHIFT key down while the pointer is dragged causes the start point of the ruler to move as well as the end point The Ruler popup shows the following information e Start The coordinate of the start point of the ruler e End The coordinate of the end point of the ruler e Delta The vertical and horizontal distances between the start and end points e Intercept The intercept point on the X and Y axes Terms X axis and Y axis refer to the lines y 0 and xz0 respectively and not the axes along plot edges e Length The distance from the start point to the end point e Angle The angle of the end point taken from the start point Zero is towards positive X 90 is negative Y 90 towards positive Y a
564. ss fabrication is itself an inherently sequential operation simply choose the command of interest from the Commands menu A corresponding popup appears that has controls laid out to represent the variable parameters available for the command For example Figure 4 19 shows the ATHENA Diffusion popup SILVACO International 4 31 VWF Interactive Tools dH Deckbuild ATHENA Diffuse Time te mperature i i Time minutes 30 500 Temi Temperature C 1000 500 mmm 1300 ES d x Bud teinperature Ch Tompierature rate OFiR OLEE Ambient Ambient Dry O2 Wet O2 Gas pressure atm 1 00 0 00 el gt 10 00 HOLD GG K 2 SE if Comme nt Figure 4 19 ATHENA Diffusion Popup Selecting the Categories Some popups such as Figure 4 19 contain a non exclusive Display setting at the top of the popup in an attempt to conserve valuable screen space Click SELECT in the boxes to display undisplay the setting of interest When enabling a setting such as Impurities the entire popup grows vertically to hold the new section The popup shrinks again when the setting 1s disabled Select as many or as few boxes as needed Writing the Text When all of the controls have been adjusted to reflect the process step to be performed click the WRITE button A line or sometimes lines of text is written to the deck at the location of the text caret If desired verify the caret s location before clicking WRITE although
565. stream format interface popup import export will appear Figure 10 12 This popup has three levels of operation Files Libraries and Structures y GD52 stream format interface Directory tmp mnt writer hankm Filter 3d52 Co B Ed Figure 10 12 GDSII Stream Format Interface Popup Under the Files mode the list displays all files matching the Filter field in the directory defined in the Directory text field Clicking on the Describe button with a GDSII file selected generates a popup display describing information held in the file such as the last access dates and the number of elements contained In the Libraries mode all layout libraries in the selected file are displayed on the list The current library is selected by choosing an item on this list To generate new libraries click on the Create button and enter a new name for the library in the Name field for the newly created item SILVACO International 10 19 VWF Interactive Tools The Structures mode lists all of the layout structures in the currently selected library Structures are loaded by selecting an item on the list and clicking on the Load button The Uncover sub structures option is used to specify whether MASKVIEWS should recursively load structures referenced within the selected structure loading these may take a long time The Offset x and y fields allow loaded structures to be offset by the specified amounts As elements are loaded if they have no
566. surrounded by a square box Sei MaskViews Cut Files Category 7 Drag Drop SP Y mos sec pros ser No cutline loaded Figure 4 24 MaskViews Cut Files Drag and Drop Category To load a cutline from the input deck 1 Create and save a MASKVIEWS file as specified in step 1 for loading a cutline disk file using the popup 2 Use the syntax cut line filename in the go simulator line to load the previously saved file The following line loads a cutline stored in the file default sec and starts ATHENA go athena cutline usr jdoe default sec It is possible to drag and drop up to 16 different cutlines this way that s all there is room for in the icon drop area You do not need to save the cutlines to a file to use drag and drop But if the same cutline is to be used again in the future then it needs to be saved Save cutlines from MASKVIEWS by clicking on Write on its popup Figure 4 25 Either method of loading a cutline loads the mask information into DECKBUILD and causes the mask names to appear in the SSUPREM3 and ATHENA Mask popups Figure 4 28 Note You can clear the currently loaded cutline by either selecting the clear button in the MaskViews Cut Files popup or by using the cut 1ine none syntax inthe go simulator line 4 36 SILVACO International DeckBuild 4 8 3 Starting Text Editor Use the Text Editor choice to startup the general Text Editor application with the file current
567. syntax shown below Appendix A Models and Algorithms provides a more detailed explanation extract name Tuning bf bf x val 0 5 bip tn0 1 0e 5 bip tp0 1 0e 3 bip an0 22 9e 31 bip ap0 0 98e 31 bip nsrhn 5 0e12 bip nsrhp 5 0e15 bip betan 2 1 bip betap 1 Table 5 1 shows the extract parameters representing the BJT parameters 5 40 SILVACO International DeckBuild Extract Table 5 1 BJT Parameters We mem ec si Formar 0 CO CET ve ase nie tag nisin Crest ECN ECC m ECC for ese Care mision int e sia Ree ta fee Pase nie Lage fueren Automated command writing is accomplished with the use of the DeckBuild Extract popup window This is accessed from the Commands menu when either SSUPREM3 or ATHENA is selected as the current simulator I V Curves can be visualized with TonYPLorT if the Compute LN curve option is selected on the EXTRACT popup In this case select from either forward or reverse characteristics and specify the axes of the curve e All extracted parameters can be used as optimization targets e All extracted parameters are appended to the default results file in the current working directory Unless specified using the datafile filename syntax 1t defaults to results final e When running under the VWE all extracted parameters will be logged for regression modeling SILVACO International 5 41 VWF Interactive Tools QUICKBIP solves fundamental system of semiconductor equations continuit
568. t 1s displayed you can generate one dimensional profiles of any solution quantity along a cut line though the device As an example look at the doping profile of phosphorus along a vertical line through the LDD doping region Select Tools Cutline to display the Cutline window as shown in Figure 2 19 Tonyplot Cutline CREATE NEIES Atari ploj Dismiss Select number 1 A Make mowie 5 hift position Figure 2 19 Cutline Window Select the vertical cut option from this popup window by clicking on the second icon Then draw a vertical line directly onto the two dimensional contour plot with your mouse as shown in Figure 2 20 kal TonyPlot v2 4 0 File Ti View ci Plot vc Tools 73 Print ch Properties ci Help c ATHEMA Data from deckbDAAa08031 Tonyplot Cutline CREATE in LEL mo ETE 33 Yi 24058 Dismiss Select number 1 A y Make movie Shift position 0 0 1 02 0 3 0 4 Figure 2 20 Creating Cutlines This action causes a second plot window to appear with the one dimensional doping profile displayed Using the cutline control popup window again select the Shift position button and then click on the horizontal arrows This causes the cutline to be moved around the contour plot The cutline only moves around when the contour plot is selected 2 18 SILVACO International Tutorial 2 5 11 Extracting Process Parameters At this point the process simulation of the
569. t corners No footers are drawn by default but you can add them with these text fields on this popup 7 14 7 Special Characters and Macros Titles axis labels and footers may all contain special characters if needed These allow alternative letters and symbols to be drawn such as Greek letters superscript numbers etc The titles and footers may contain title macros see Section 7 19 Properties 7 34 SILVACO International TonyPlot 7 15 Labels Labels are used to add arbitrary notes and informative text to any plot These labels can be drawn with leader arrows or can be free standing The Labels popup Figure 7 21 accessed by choosing Labels from any plot menu is used to add change and delete these labels As with the Annotation popup the Labels popup is the same for all plot types It differs in that only the first selected plot is affected and no others Each plot has associated with it a list of labels and each label has a position in the plot to which it belongs The labels that belong to the selected plot are shown in the list on the Labels popup Tonyplot Labels Minimum concentration Peak concentration START POINT Simulated cross over Label Peak concentration Create Delete Size Small Direction Right Arrow Free Color a Dismiss Figure 7 21 Labels Popup 7 15 1 Control Items Each of the items on the popup are described below e List of labels This list
570. t for your Operating System 8 7 3 Linux RedHat PC Compatibles PC Models TONYPLOT3D executes on any PC Compatibles that support Linux RedHat 7 2 or higher Operating System This version of TONYPLOT3D requires Linux RedHat 7 2 or higher Graphics Hardware There are two ways of producing screen images One way is a software renderer which uses graphics primitives implemented in software Another way is a hardware renderer which uses native graphics hardware implementing the OpenGL API version 1 1 or higher The software renderer works on any PC compatibles with True Color frame buffers and an X server You can use xdpyinfo to obtain information about the X server on your machine To run TonyPlot3D without graphics acceleration use the nohw command line option The hardware renderer requires a True Color graphics adaptor that supports OpenGL API version 1 1 Memory TONYPLOT3D requires a minimum of 128Mbytes of real memory To improve performance however more memory such as 256Mb or even 512Mbytes 1s strongly recommended OpenGL Library TONYPLOT3D is designed to work with OpenGL API version 1 1 or higher Contact your graphics hardware vendor for information on obtaining OpenGL drivers for your graphics card SILVACO International 8 41 VWF Interactive Tools 8 7 4 Windows NT 2000 XP PC Compatibles PC Models Currently TONYPLOT3D is not officially supported on Windows NT 2000 XP But TonyPlot3D will execute on
571. t gt dark border lt int gt LGA Dorder cms ZOOM rnt Grid EE mesh lt int gt edges lt int gt outline KINE Junctions EE electrodes lt int gt outline lt int gt overlay lt int gt lt string gt overlay reset overlay apply eval lt expr gt abs lt expr gt log lt expr gt exp lt expr gt loglO lt expr gt sqrt lt expr gt sin lt expr gt cos lt expr gt tan lt expr gt asin lt expr gt acos lt expr gt atan lt expr gt hypot lt expr gt lt expr gt mag lt expr gt lt expr gt sinh lt expr gt cosh lt expr gt maximum lt expr gt lt expr gt minimum lt expr gt lt expr gt help help help all help lt string gt Guat comment SILVACO International TonyPlot 7 19 VWF Interactive Tools 7 22 Functions Functions are included in TonYPLOT to allow you to further customize the output that can be produced and to extend the amount of data that can be plotted without needing further simulation runs and large data files TONYPLOT allows functions to be created for use with any type of plot and uses an advanced mathematical parser to calculate function results from arbitrarily complex math expressions 7 22 1 Use Of Functions In order to use functions first define a function in terms of quantity names Boron Drain bias Temperature etc constants and operators sin sqrt etc and then PLOT that function in the de
572. t is recommended that this line become a comment beginning with Then a new first line should be added that reads go devedit or if you want to retain the version number go devedit simflags V 2 4 0 R or whatever the version number of DEVEDIT in use 9 18 SILVACO International DevEdit rasan rer LTE go devedit simflags HDevEdit versioan 2 4 4 4 work area 1 0 y1 0 05 224 5 y2 0 5 H devedit 2 4 4 4 Tue Dec 30 20 55 13 PST 13373 libsflm 2 0 0 R Thu May 1 18 03 38 PDT 19977 libb Misc 1 20 0 R Mon Apr 28 17 55 25 PDT 1997 libcardDeck 1 20 0 R Tue Apr 23 15 01 54 PDT 19977 libGeometry 1 20 0 R Mon Apr 28 18 17 55 PDT 19977 libDW Set 1 20 0 R Mon Apr 28 17 57 52 PDT 19977 H libsvc Misc 1 20 0 R Mon Apr 28 18 20 53 PDT 1997 116508 1 0 6 Tue Dec 30 14 47 45 PST 13373 libss55 1 20 0 R Mon May 5 16 29 45 PDT 19977 8 libMeshBuild 1 20 4 Tue Dec 30 20 36 26 PST 19977 libDW Make 1 1 3 R Tue Dec 2 01 59 58 PST 19977 region reg 1 mat 4lGa4s calor x fff pattern x9 polygon 0 0 084 0 0 05 1 5 0 05 1 7 0 05 2 3 0 05 2 5 0 05 4 5 0 05 4 5 0 084 4 polygon 4 5 0 098 4 5 0 5 0 0 5 0 0 098 impurity id 1 region 1d 1 imp Acceptors peak valuye 100000000000000 ref value 1 000000000000 comb FunceMultipl H constr mesh region 1 default SS region reg 2 mat Gads color 0x P00 pattern xS8 pol ygon 0 0 1 0 1 1 0 1 5 0 05 0 0 05 H impurity id 1 region id 2 imp Donors libDW Make 1 1
573. t or copy options an area of the layout 1s marked by selecting opposite corners of a rubber band box Polygons contained either partially or wholly within this box are then copied to the group paste buffer If the cut option was chosen these polygons are also removed from the layout screen After choosing paste the drag operation can be used to position the group paste buffer back onto the layout screen The undo option can be used to undo a cut or a paste operation as long as no other actions have been performed since the operation e Slice Cuts all polygons along a line into sections After selecting a line is drawn on the screen and after the second point has been defined all polygons along the line 1s sliced This can be used to assign more than one electrode name to a given polygon If you cut a polygon its labels are then discarded SILVACO International 10 11 VWF Interactive Tools 10 4 6 Object Editing e Merge This is used to merge two overlapping polygons into one shape After selecting Merge two polygons are chosen for merging A warning message is displayed if the polygons cannot be merged correctly The merge operation uses only the outside surfaces of the merged polygons any totally enclosed spaces are lost e Mode These options are used to select whether all drawing actions create new polygons or cut holes in current objects If you select draw outline then all drawing operations create new mask objects If y
574. t rue Example option ascii plot This will run the trials without the DECKBUILD GUI and ignoring any TONYPLOT commands in the trial deck option lascia plot This will run the trials inside a child DECKBUILD GUI and will execute any TONYPLOT commands in the trial deck B 5 7 save Syntax save type lt sdb spayn gt outfile lt filename gt Description The save command saves the data generated by the experiment in the file lt filename gt You can output the data in sdb format to be viewed in TONYPLOT or in spayn format to be analyzed by SPAYN The following data is stored for each trial e The ID of the trial e The values of the parameters defined on the experiment line e The values of the parameters calculated with extract commands You can place the save command before or after the experiment line If it comes before the experi ment line the file will be rewritten at the end of each trial Therefore if something unforeseen hap SILVACO International B 11 VWF Interactive Tools pens during an experiment you will have the data from the trials that were completed If it comes after the experiment line all the data from the experiment will be written at once Only one file at a time can be active If you define two save statements before an experiment line only the second will actually get the following data save type sdb outfile save sdb save type spayn outfile save spayn Sweep parameter doping type power ra
575. tandard structure files directly with extract using the syntax below extract init infile filename Material Thickness Extract the thickness of the top first occurrence of Silicon Oxide for a 1D cutline taken where Y 0 1 Assume 2D structure A warning is then displayed if results cross boundaries set by max v and min v extract name tox thickness material Si0 2 mat occno 1 y val 0 1 min v 100 max v 500 oxide can be substituted for the material Si0 2 Junction Depth Extract the Junction depth of the first junction occurrence in the top first occurrence of silicon for a 1D cutline taken where X 0 1 extract name 31 depth xj material Silicon mat occno 1 x val 0 1 june oceno 1 Surface Concentration Extract the surface concentration net doping for the top first occurrence of silicon for a 1D cutline taken for an X value corresponding to the gate contact region for loaded MASKVIEWS cutline data extract name surface conc surf conc impurity Net Doping material Silicon mat occno 1 region gate SILVACO International 5 21 VWF Interactive Tools QUICKMOS 1D Vt Extract the 1D threshold voltage of a p type MOS cross section at x 0 1 using the built in QUICKMOS 1D device simulator This example uses a default gate bias setting of 0 5V for a 0 25V step with the substrate at OV and a default device temperature of 300 Kelvin Values of QSS and gate workfunction have also be specified extract name 1D Vt ldvt ptyp
576. tatistical distributions of input parameters are obtained in several ways First they can be passed to TONYPLOT along with the actual RSM data that uses the inputs If none are passed TONYPLOT generates a default distribution Finally all input distributions can be specified using the Input Distributions popup see the Input Distributions section Setup The first thing to set up before running a Yield Analysis is the input distributions The scrolling list on the Production popup shows the distribution types for each input To examine the distributions in detail and possibly alter them use the Input Distributions popup The number of samples taken by TONYPLOT of each input parameter can be set to any value the default is 5000 samples The more samples that are taken the more accurate the results but it takes longer to perform the analysis Click on the green START button to start the analysis The number of samples taken is continuously displayed next to the start and stop buttons To abort the analysis at any time click on the STOP button When all samples have been taken TONYPLOT takes a few moments to collate the data it has obtained and then a barchart 1s plotted Results The default result plot that Yield Analysis creates 1s a barchart showing the distribution of the output parameter s This plot is an instance of a standard Statistics plot and can be manipulated further with the normal popups for Statistics plots The
577. te the curve of dydx gate bias and drain current plotted against and X axis of gate bias extract name dydx deriv v gate i drain oubfires dydse dat It is also possible to calculate dydx to the nth derivative as below extract name dydx2 deriv v gate i drain 2 outfile dydx2 dat To find local maxima and minima on a curve limit the section of the curve X axis The following statement extracts the maximum drain current where gate bias 1s between the limits of 0 5 volts and 2 5 volts extract name limit max curve v gate 1 drain x min 0 5 x max 2 5 out limit dat In addition there are several operators which apply to curve axes They are as follows abs axis log axis roglOtaxi s sqrt axis atan axis axis For instance extract curve abs i drain abs v gate The operators can be combined For example l1log10 abs axis These operators also work on curve axes from process simulation 5 30 SILVACO International DeckBuild Extract 5 4 2 Curve Manipulation A number of curve manipulation primitives exist min curve max curve ave curve minslope curve maxslope curve slope line xintercept line yintercept line area from curve area from curve where x min X1 and x max X2 x val from curve where y val k y val from curve where x val k x val from curve where y val k and val occno n y val from curve where x val k and val occno n grad from curve where y
578. ted can be set by positioning marker lines at certain locations along the X axis The Integration tool works with both XY Graph and Cross Section plots Tonyplot Integrate Features a COORD TYPE 1 0 05225 1 Start point 2 0 0478 Interface 2 0 24152 Minimum d 0 2517 Maximum 5 b 0 28562 t Maximum 0 35805 Minimum Draw area Absolute value Use log of Y Convert X um te cm Red Line Blue Line Area CH 1 St CH 2 Interval 0 03223 0 03223 Dismiss Add label Figure 7 28 Integrate Popup Features Box This list show all the points of interest on the curve in the plot used It shows all minima and maxima as well as the start and end X values and positions of all material interfaces The marker lines which are used to define the X interval for the integration can be moved to any of these features using the arrow buttons or by using the mouse explained later It is possible to use the mouse pointer to add more features this is explained later 7 44 SILVACO International TonyPlot Options There are some options that can be toggled on and off when using the Integrate tool These appear in a line under the scrolling list and each of them is as follows e Draw area fills the area under between the curve s with a hatched pattern when turned on If turned off no area is drawn but it 1s still calculated Absolute value uses positive areas only taking the absolute value of al
579. tempts to interpret any text that 1s selected 1 e highlighted in reverse video as the name of a file to be loaded Having made sure that there 1s no selected text you should now position the cursor over DECKBUILD s Tools button This 1s the righthand most file control button Click and hold the left mouse button and a drop down menu appears Then move the cursor down to Plot and move the cursor to the right until a sub menu appears Figure 2 5 Select Plot Structure and release the left mouse button esworkmos1ex02 in dir u jdoe work Main Control 7 Commands 7 Tools Plot Plot structura MaskViews Set files Manager Figure 2 5 The Tools Menu This will start ToNYPLoT which loads and displays the current structure This may take several seconds DECKBUILD announces that it is starting TONYPLOT by displaying the status message Plotting onthe left hand side of the footer bar below the tty region When TONYPLOT starts it displays a Welcome window Select OK on the window to display the current structure SILVACO International Tutorial 2 5 3 Using TonyPlot TONYPLOT displays the materials of the various layers with a SIMS like doping profile superimposed The plot will look similar to Figure 2 6 TonyPlot 2 4 0 ATHENA Data from deckbD4A4a07682 Boron cm3 Phosphorus 7cm3 Het Doping 7cm3 Silicon S5102 0 5 0 6 Distance along line SILVACO Inter
580. tered history initialization for the previous simulation fails Compress is switched off by default but when on all history files are compressed and appears in the form history str gz These files are automatically decompressed for initialization from history or loading into TONYPLOT This function may be useful when simulating large or complex structures Clicking Save as defaults saves the current settings for use the next time DECKBUILD is run 4 38 SILVACO International DeckBuild Initializing From History After running part or all the way through the deck with history enabled the simulator can be re initialized in the state it was in at some previous point in the deck Re initialize by selecting highlighting the line of interest then clicking on the Init button on the Execution Control panel on the main window between the text and tty subwindows For backwards compatibility the Init from History button on the Main Control popup also provides this feature Note This overloads the functionality of the Init button if you select a filename which exists in the current directory instead DeckBuild causes the simulator to load that file DECKBUILD also resets the current line to the selected line DECKBUILD may not have any history attached to the selected line if a comment line has been selected or skipped DECKBUILD displays a notice prompt and suggest a previous point in the input deck by highlighting it If selecting a line
581. that describe the current state of mesh development Although the DEVEDIT command file is usually smaller than the structure file it contains information such as the state of DEVEDIT impurity equations and meshing modes Startup 9 2 You can start DEVEDIT one of two modes 2D and 3D In 2 D mode use devedit In 3 D mode use devedit3d To start DEVEDIT in GUI mode use one of the following commands for a UNIX prompt This starts DEVEDIT with no active device devedit fred str amp This starts DEVEDIT with the Silvaco Standard structure fred str loaded devedit fred de a This starts DEVEDIT with the command file fred de loaded devedit3d amp This starts DEVEDIT in 3 D mode with no active device devedit3d fred3d de amp This starts DEVEDIT with the 3 D command file fred de loaded DEVEDIT does not currently support loading 3 D structure files Note Make sure your DISPLAY environmental variable is set to an active X window screen SILVACO International DevEdit 9 2 Base Window 9 2 1 Layout and Functionality The DEVEDIT base window display Figure 9 1 is made up of several sections Control Buttons Displayed along the top of the screen the series of menu buttons are used to control all DEVEDIT actions e Main Canvas This area is used to show a graphical representation of the device e Main Panel Displays a list of the regions in the current device and allows a region to be selected for re
582. that is so far back in the deck that DECKBUILD no longer maintains relevant history a notice prompt appears to inform you of the condition Use a line closer to the current position or increase the history length When re initializing from history any go simulator flags see the Sections 4 10 Auto Interfacing and 4 16 7 GO specified on the go statement associated with the selected line are also re initialized For example if a MASKVIEWS cutline file had previously been loaded using the syntax cutline filename then the specified file would be reloaded into DECKBUILD Removing History Files Since history files can take up a fair amount of storage space DECKBUILD provides two ways to remove them First is to delete them at any time during the run by clicking on Clear in the History popup Second let them be removed when DECKBUILD is quit DECKBUILD is configured by default to remove history files at quit time and displays a notice prompt to confirm their deletion Change the default by changing the Remove history files setting on the Options category of the Main Control popup The choices are to remove history files confirm their deletion or not to remove them at all In any case history files are always saved in and removed from the current directory SILVACO International 4 39 VWF Interactive Tools 4 10 Auto Interfacing 4 10 1 Overview Auto interfacing is the term used to describe DECKBUILD s capability o
583. that reproduce a single unchangeable cross section of a wafer DECKBUILD s IC layout interface MASKVIEWS makes it possible to write a single deck that can be used at any location on a wafer without using hard coded geometry information You can create or read from GDSII or CIF format device layout and mask layers using MASKVIEws Then create or modify a deck using DECKBUILD to use mask names rather than deposit and etch statements with hard coded geometry values Finally after making a cutline using MASKVIEWS DECKBUILD can simulate that cross section You can simulate any cross section of the device in this manner Extraction DECKBUILD contains built in extract routines for both process and device parameter extraction EXTRACT forms a function calculator that allows you to combine and manipulate values or entire curves quickly and easily You can take one of the standard expressions and modify it as appropriate to suit your needs or use the custom extract language to create unique extraction statements specific to the current simulation EXTRACT also includes features such as variable substitution and internal 1D device simulators QUICKMOS and QUICKBIP for specialized cases of MOS and bipolar electrical measurement All extracted results are displayed in the DECKBUILD TTY subwindow and stored in a datafile for easy comparisons of different simulations See Chapter 5 DeckBuild Extract Optimization A powerful OPTIMIZER is av
584. the View menu e g grid toggle turns the axis grid on or off h help prints out a list of these key commands on the standard output e j junk data prints a list of all junk data attached to the plot structures e m mean amp standard deviation prints info about statistical data column statistics plots only e n next page changes to the next page when in Page mode e N previous page changes to the previous page when in Page mode e p position displays the current pointer x y position in a popup window e r region data prints all attached region data for all structures in the plot v value label adds a spot height value label to contour plot RSM 2D plots only e z previous zoom sets the zoom level to the zoom level previously used e Z autozoom zooms all mesh plots to the quadrant containing the greatest number of mesh points e ESC abort drawing aborts contour drawing at any point This only works if the TONYPLOT window has keyboard focus when drawing begins e b bias display bias information for structure from device simulation SILVACO International TonyPlot 7 7 Command Stream As well as the normal graphical user interface control to TONYPLOT a command language known as a Command Stream is available To start a command stream choose Command Stream from the main File menu A prompt appears in the window from which TONYPLOT was started Commands can be entered at this prompt and the effec
585. the cell value The worksheet understands normal keyboard input plus Control U which erases the cell contents Enter the new value 4 Finish the edit by pressing Return The new value remains in the worksheet cell When the cell is read only a message footer is displayed in the lower left corner of the worksheet y Deckbuild Optimizer NOME Marquardt parameter Marquardt scaling Function evaluations Jacobian evaluations Gradient norm aum af squares difference F C difference RMS error 1 Average error 1 Maximum error 55 lterations Termination code ET Le Editing cell value press RETURN when complete Figure 6 25 Editing a Worksheet Cell 6 8 3 Selecting Rows To select a worksheet row position the pointer anywhere over the row and double click the SELECT mouse button To select a second or any further row extending the range of the selection click ADJUST over each additional row to be selected To deselect a row position the pointer over the selected row and click ADJUST ADJUST toggles the selected state To deselect all rows press SELECT once anywhere in the worksheet Note Selections are lost when the worksheet mode is changed 6 24 SILVACO International DeckBuild Optimizer 6 8 4 Mouseless Operation The worksheet supports mouseless operation You can traverse rows and columns of the worksheet with the arrow keys plus the Home End PgUp and PgDn keys You can edit a worksheet by pres
586. the data range used in the contours legend If you set Min and Max to Auto then TONYPLOT3D extracts the data range from the different materials of the structure You can use the pulldown menu Choose From to change the materials used in the computation of this data range The three choices are All Materials Outlined Materials and Selected Objects All Materials is the default settings In this mode all the nodes in the structure are used to find out the data range If Outline Materials is selected then the list of highlighted materials in the Outlined Materials Group Box are chosen If Selected Objects is selected the data range is computed from the list of selected objects in the scene see Section 8 5 1 Object Editor The limits can also be user defined by turning on the Fix buttons and specifying the Min and Max The Legend Group Box controls the way the contours are drawn on the faces If you use Linear Type the colors will linearly interpolate between the reference colors of the legend The Stepped Type will produce a finite number of colors to use within the data range This mode is very useful for color blind users The Palette and Nb Colors are also available to further change the appearance of the legend 8 12 SILVACO International TonyPlot3D The quantity values can either be plotted with a linear or logarithmic scale When the mapping is linear the values are directly mapped to the legend s colors When the mapping is logarith
587. the net doping The mesh has changed to include a finer mesh where eradients of the net doping exist Figure 9 20 Refine on Quantities Menu for Mesh Refinement on Net Doping Gradient 9 24 SILVACO International DevEdit Click on Done at the bottom of the panel This action returns to the main DEVEDIT panel If the existing panel is not the main panel click on Cancel or Done on the exiting panel DEVEDIT returns you to the previous panel and ultimately to the main panel Near the bottom of the main panel the Number of Points and Number of Triangles are listed These numbers are useful in order to gauge the total number of points with the more subjective interpretation of the quality of the grid Return to Refine on Quantities The Scale default is Logarithmic which is appropriate for doping concentrations If the value of the quantity varies more than the sensitivity parameter the mesh is made more dense locally Accordingly decreasing the value of the sensitivity increases the number of mesh points You can change the sensitivity value slightly then select MeshBuild from the Mesh pull down button and see the effect on the mesh The Transition value is the minimum value of the quantity that is considered significant If the Transition value is set to 10e10 then gradients of Net Doping between 10e9 and 10e8 are not considered when the mesh 1s created Mesh Constraints The Mesh Constraints section is the principal method for controlli
588. the operating system you are using TONYPLOT is independent of uses the lpstat service available on all supported platforms Linux Solaris and HPUX 7 17 7 Adding Printers To TonyPlot To add a printer to ToNvPLoT the Printer Editor is provided Display this now by choosing Printers from the main Print menu TONYPLOT comes with a printer built in This may or may not be useful at any particular site We can use this built in printer as an example The list on the left shows the names of the printers TONYPLOT knows about The one that 1s selected from this list has its various set up details shown on the right This printer is attached to a queue called lp if that queue exists If not it shows the first queue TONYPLOT finds Underneath the queue is the type of printer This is PostScript by default but TONYPLOT can write hardcopy files for many other types of printer too Next is DPI which is the number of dots per inch the printer can achieve Last a choice item indicates whether the printer is a monochrome printer or a color printer Assume that the printer in question 1s a DeskJet C500 printer and that it is attached to a queue called djet1 To tell TONYPLoT about this printer perform the following steps Enter a name to use for this printer The name can be anything but it 1s best to use something useful Call the new printer Deskjet enter the name Desk jet into the space marked Name erase the
589. the possibly many stacked Silicon layers you are interested in For this structure there is only one Silicon layer Therefore specifying the layer occurrence number is optional SILVACO International 2 19 VWF Interactive Tools e Where in the source drain region you want the junction depth to be determined The depth of the junction varies from xj the value you are looking for within the body of the source drain region to zero at the edge of the region In order to extract the correct value for junction depth a point within the body of the source drain region must be used In this example the value 0 1mm into the source drain region is used As shown in Figure 2 21 this value should yield the junction depth for the source drain region e The junction number In complicated structures it is possible to have more than one junction within a material layer For example an n source drain region within a p well on an n substrate would on a line through the source drain region have two junctions For the present structure there is only one junction Specifying the junction number is optional The statement that extracts the junction depth is as follows this should all occur on one line extract name nxj xj silicon mat occno 1 x val 0 1 junc occno 1 After this statement executes the following value of the calculated junction depth is printed nxj 04 0997025 um front top ot Tirst Silicon layer X val 20 1 This information is also writt
590. ther VWF INTERACTIVE TOOLS DECKBUILD is the command center of SILVACO s interactive simulation environment TONYPLOT is a powerful and versatile scientific visualization tool that plots the data produced by process and device simulators TONYPLOT can be invoked by users or by DECKBUILD This tutorial illustrates the use of DECKBUILD and TONYPLOT in a typical application The tutorial is built around the process and device simulation of an MOS transistor Some familiarity with the basic concepts of silicon device processing and MOS transistor operation is helpful but not essential for working through the tutorial Note The VWF Interactive Tools for PC Windows are different For more information see the PC INTERACTIVE TOOLS USER S MANUAL SILVACO International 2 1 VWF Interactive Tools 2 2 Introduction 2 2 The core tools of semiconductor technology CAD include process simulation ATHENA device simulation ATLAS circuit simulation SMARTSPICE device characterization and modeling UTMOST and other SILVACO simulators These tools can be used in a stand alone batch mode or from within the DECKBUILD interactive environment Running the core tools from within DECKBUILD provides many advantages including ease of use convenience and access to additional capabilities The tutorial will show you how to do the following e Start DECKBUILD and load an example input deck e Run ATHENA under the control of DECKBUILD
591. tial minimum and maximum values The initial minimum and maximum values are taken from the first parent parameter but are not updated on the child parameters This preserves their independent settings in case the parameters are unlinked later The optimized value is taken from the master parameter and updated on each of the linked parameters during optimization It is also possible to link in a new parameter to a set of already linked parameters Select any one of the already linked parameters plus the new parameter and choose Link again on the menu The OPTIMIZER knows how to follow the sequence of links SILVACO International 6 9 VWF Interactive Tools If the master parameter is deleted all links to it are automatically removed If a linked parameter is deleted it does not affect any of the other links It is important to remember that links are not saved when the optimizer setup is stored to a file The links have to be set up again if an optimizer file is reloaded To unlink a parameter 1 Select the row to be unlinked by double clicking SELECT 2 Select additional rows if desired by single clicking ADJUST 3 Choose Unlink from the Edit menu 6 3 5 Parameter Defaults The Parameter worksheet has builtin values to determine the appropriate response type and minimum and maximum values for a new parameter By default parameters are of response enter log if their initial value is above le 10 and min max values are 50 for
592. tifies the commands that DECKBUILD executes Each of these commands is described in subsequent sections e ASSIGN e AUTOELECTRODE e DEFINE e ELSE e EXTRACT GO e Lr e TV END e L END 9e LoMODILEYX e LOOP e MASK e MASKVIEWS e SEL e SOURCE e STMT e SYSTEM e TONYPLOT e UNDEF INE 4 16 3 ASSIGN Provides a much richer version of the functionality provided by the existing SET statement see Section 4 16 12 SET Syntax This is the syntax of the ASSIGN statement assign name lt variable gt prank n value expr array delta lt expr gt ratio lt expr gt l value expr array covalue lt gqstring gt delta lt expr gt 4 60 SILVACO International DeckBuild lt c_array gt level lt expr gt with the following subsidiary definitions lt sexpr arrday gt lt expr gt lt expr gt lt expr_array gt lt expr gt lt expr_array gt lt c_array gt gt c integer qstring c lt integer gt lt qstring gt c array Description The ASSIGN statement allows you to assign either a numerical n a logical 1 or a character c value to a variable Numerical values may be arbitrary arithmetical expressions and may incorporate any of the standard functions mentioned in Section 4 16 12 SET All user defined variables will be substituted before the expression is evaluated Arbitrarily many variables may be assigned in the same deck
593. tings by clicking on the Save as Defaults button These options are used whenever TONYPLOT is restarted 7 54 SILVACO International TonyPlot 7 18 Printer Drivers 7 18 1 Stack Size When creating a PostScript file TONYPLOT assumes the stack size for the PostScript interpreter to be 200 For example no polygons of greater than 200 points are drawn lines longer than this are split into smaller sections If this default value is too large it can be changed by setting the value of an environment variable GRE_STACKSIZE to the maximum for the interpreter being used This must be done before TONYPLOT is started It has no affect on a TONYPLOT currently running Example oe setenv GRF STACKSIZE 100 wc LoOnyp lot blas log SILVACO International 7 55 VWF Interactive Tools 7 19 Properties There are many aspects of TONYPLOT s behavior that you can alter to suit your needs These are referred to as TONYPLOT Properties and they exist to tailor the characteristics of various operations All properties can be viewed and modified using the Properties popup which is displayed by choosing a category from the Properties menu on the main window Once the popup is visible any of the other categories can also be looked at by choosing one from the item in the top portion of the controls Some categories are slightly apart from the main group these are Materials and Functions The Functions option displays the Functions popup the same popup
594. tinue the simulation by selecting the cont button on the simulator control panel DECKBUILD now sends commands to ATHENA up to the preset stop point and then pauses the simulation directly before this point As the simulator is running take some time to observe the ATHENA commands being executed and the run time output that is being generated Click on the next button to make sure that the simulator runs to include the metal etch step directly after the defined stop point The polysilicon etch makes the structure non planar The simulator has to do more work in 2 D mode and progress through the commands is slower Most of the commands being used are straightforward and their meaning is clear to most process engineers The following lines may require some explanation depo poly thick 0 2 divi 10 This command specifies that a layer of polysilicon 0 2 microns thick is deposited and that 10 grid layers 1s defined etch poly left pl x 0 35 This command defines the position in the x direction from which the polysilicon to the left 1s removed This command defines the length of half of the transistor which is reflected about the right axis later on to make the full device method fermi compress This command switches on some physical models for subsequent oxidation and diffusion steps All following steps use these models These models are in fact the ATHENA defaults and are only defined here as an illustration of the method command The ATHENA U
595. tion e Component X This menu is active only when the Components option is set to Custom It is used to assign a quantity to the X component of the user defined vector e Component Y This menu is active only when the Components option is set to Custom It is used to assign a quantity to the Y component of the user defined vector e Materials The part of the structure on which vectors are drawn can be limited to regions of a certain material If no materials are selected in the list then it is treated as all being selected the default If you do not plot the vectors in any materials set the Quantity or Component X Y to None 1 22 SILVACO International TonyPlot e Range The range items on the right hand side of the popup control the sizes of the vector arrows drawn The longest arrow matches the vector with the greatest magnitude and the shortest arrow matches the smallest magnitude If the smaller length is specified as zero then the lengths of the draw arrow are directly proportional to the vector magnitude Colors Specifies the color sets for the arrows These are the same color sets that are used on the Contours popup e Functions Displays the Functions popup used to define the two functions you can select in the Quantity pulldown menu Light If a structure contains light ray information the Light popup can be used to display that data in a number of ways Light information consists of a number of Beams and each beam i
596. tion 1 e workfunction phase etc then these are also available and the key shows the values of these parameters in each region Any regions that are one dimensional 1 e substrate electrodes are drawn as thick lines since they do not enclose a complete area Contours Contouring is the most commonly used method for visualizing data on two dimensional meshes The contouring facilities in TONYPLOT provide sufficient control for obtaining any desired plot Both contour plots and fringe plots filled contours are available with material naming and range control to limit the plot to a restricted subset of the data Each plot can have up to three sets of contours displayed at once This makes it possible to view more than one quantity simultaneously either all filled but in different material regions or all lines over all materials or any other combination Of course if all three sets are filled sets and all are plotted over the same materials only the third set the last one to be drawn will be visible If lines and filled sets are combined the filled set should come before the line set TONYPLOT selects a default quantity whenever possible This allows contours to be plotted without the need to use the Contours popup Figure 7 10 7 20 SILVACO International TonyPlot Tonyplot Contours Set Number Quantity Net Doping EN 2 Materials Range Silicon Sid Conductor ez 1 FERH Di Key title
597. tional 10 23 VWF Interactive Tools 10 7 4 Reordering Layers To reorder layers on a layout using the popup displayed Figure 10 16 select Options Order layers This allows layers to be re ordered copied and deleted iy Maskviews Order layers Current layers Target layers E D Copy E Delete Figure 10 16 Order Layers Popup This popup has two scrolling lists e Current layers lists all layers as they currently are in the layout e Target layers lists the layers in the order they are intended to be Layers are copied from the Current list to the Target list using the buttons listed under the Copy label e All copies all of the layers in the current list to the target list Any layers previously in the Target list are removed e Before copies the layer name selected in the Current list to the position before the layer selected in the Target list e After copies layer name selected in the Current list to the position after layer selected in the Target list Layers are deleted from the target list using the buttons listed under the Delete label e All deletes all items from the Target list e Selected deletes the currently selected layer in the Target list Once the layers in the target list have been defined as required the new layer ordering is put into effect by clicking on the Apply button Elements on layers that are not copied to the target list are deleted A warning is then issued in such cases giving the ch
598. tions simultaneously 7 17 2 Printer Editor The Printer Editor is accessed by choosing Printers from the main Print menu The popup Figure 7 32 shows a list of all the printers known to TonYPLOT Also displayed are the configuration details about the printer that is selected from the list Tonyplot Printer Editor Printers Name Postscript Postscript Queue Ipb25_1 ned Type PostScript DPI 300 Monochrome Color Update Delete Figure 7 32 Printer Editor Popup Printers Box You may use the Printers box to add change or delete printers Adding a printer To add a new printer set printer details on the right and change Name to any name that does not already exist When the Update button is clicked on the printer is added to the list e Changing a printer To modify an existing printer select the printer name from the list change desired items except the name and click on Update Printer settings override existing settings e Deleting a printer To delete a printer from the list select the name of the printer to be deleted and click on the Delete button The name and printer are removed As printers are added and deleted the Printer item on the Print Options popup is updated so that it always reflects the latest list of known printers TONYPLOT reads system print information from the standard lpstat service available on all platforms You can set the environment variable PRINTER to add
599. tively You can specify the simulation will run in any of the following ways e Run one step at a time i e with full interactive simulation control e Run to a specified stop point e Run the entire input deck Simulators can run under batch control or optimizer control These methods of execution are not covered in this tutorial Figure 2 4 Runtime Control Buttons Stepping Through A Simulation We will run the first part of the process simulation by going through one command at a time This single step mode is often used for identifying errors and during tuning and calibration To execute commands one step at a time select the next button from the DECKBUILD control panel The next command in the text edit region is sent to the active simulator and the cursor in the text edit region moves down by one line The previous command appears at the simulator prompt in the tty region It is processed by the simulator and any associated output is displayed in the tty region The command that is currently executing is displayed in reverse video in the text edit region The line number of the current command 1s shown on the right hand side of the control panel after the Line label If you click on the next button several times in a short period of time the cursor will move ahead of the simulator as the commands take some time to execute The simulator continues to process commands until it catches up to the cursor The simulator then waits for t
600. to move with a button clicked before 1t registers as a drag e Draw drag source selects whether to draw a drag icon on each cross section summary display SILVACO International 10 27 VWF Interactive Tools e Invalid drop site displays the cursor image when the mouse pointer passes over a region where dragged data cannot be dropped 10 8 6 Printer Properties The printer properties category is used to select the destination and type of printer to generate the outputs e Destination selects whether output will be written to a file or sent directly to a printer When you select Printer a menu will appear listing all of the known printer queues Select the destination queue in this menu When you select File a File field will appear requesting the name of the file to create If you need to append the file name with a unique number to prevent an overwrite use the Indexed field Type specifies the destination type of printer Color check box will become available if color options are supported for the selected printer type This option is not available for all printers e Layout indicates the paper orientation e Page size selects the printer paper size 10 8 7 Import Properties The import properties are used when importing and exporting GDSII structures to encode some of the attributes available in MASKVIEWS which are not specifically catered for in the GDSII stream format description e Datatype value is the numeric attrib
601. to specify each curve By default the quantities real and imaginary are used when the data is not converted If the data is to be converted the quantities R and X are used The data should only be converted if it appears in R X form in the structure When quantities are present that TONYPLOT recognizes as being usually displayed on smith charts TONYPLOT tries to automatically select an 1 or X quantity whenever you choose an r or R quantity There are some options to control the Smith chart drawn The chart can be drawn proportionally 1 e concentric circles appear as circles even if the plot window is not square and axis arms can be drawn in all four Smith quadrants only the first quadrant 1s shown by default SILVACO International 7 27 VWF Interactive Tools 7 11 4 Cross Section Display The Cross Section popup Figure 7 17 shows the current display settings for the first selected XSection plot see the Cutline section for details on how to generate Xsection plots When the settings on the display popup are applied all selected XSection plots are affected This permits much easier application of global changes to similar plots in the view The Cross Section popup contains all the controls needed for complete control of XSection plots Tonyplot Display Cross Section Donor Cone Acceptor Cone Potential E Field x E Field Y Photogeneration Rate Apply Reset Dismiss J Functions Figur
602. to use See Printing to determine the printer names allowed and what this means form lt fname gt When used with the print option this tells TONYPLOT to use lt fname gt as the form to use See Printing to determine the form names allowed and what this means power10 Tells TONYPLOT to show all values that are shown on a log scale as a power of 10 By default TONYPLOT shows the power index This can also be controlled with a property see Properties for more details help Prints out a list of all command line options that TONYPLOT recognizes including all of the standard X11 XView and possible Motif options as well production Starts TONYPLOT is production mode set lt file gt Instructs ToNYPLoT to load the set filename and restore the display to the condition that TONYPLOT was in when that set file was created The set file 1s applied to all files loaded at that point 1 e all files that preceded this option on the command lines Files given after this option on the command line are not affected mtitle lt maintitle gt Overrides the default plot main title and set it to maintitle instead Use single quotes around lt maintitle gt if you wish to use spaces All files loaded so far all that precede this option on the command line are affected ttitle The same as mtitle but sets the subtitle instead of the main title overlay Instructs ToNYPLOoT that all proceeding files are to be loaded and overlayed on to the
603. ton on this screen 9 9 2 Boundary Conditioning The Boundary conditioning menu option can be found under the Mesh menu Mesh Parameters item When Mesh Parameters is chosen the Boundary Conditioning control panel appears as shown in Figure 9 31 Boundary conditioning should be used before any mesh is created If a structure is modified the boundaries should be Conditioned before remaking the mesh Mesh Parameters Base Mesh Height 0 2500 Microns Ease Mesh Width 0 2500 Microns Max Triangle Ratio 100 0000 Boundary Conditioning Off Manual Automatic Max Line Slope 30 Rounding Unit o 0010 Microns Line Straightening 1 Degree s Try to Align Points No Align Apply Cancel Default Restore Figure 9 31 Mesh Parameter Panel SILVACO International 9 41 VWF Interactive Tools 9 9 3 Limitations A few basic limitations of Meshbuild should be realized before starting to use the mesh generator Meshbuild creates a mesh with few obtuse triangles This improves convergence during subsequent solutions In order to maintain this criteria Meshbuild adds a large number of triangles in or around border points For this reason the number of border points should be minimized Slight modifications can be made to the structure to minimize the number of boundary points This concept is called Boundary Conditioning The Refinement Limits option under the Mesh button sets up the boundary conditioning control panel Here a nu
604. tract Features extract start material Silicon mat occno 1 region occno 2 bias 4 0 x val 0 1 extract done name N type SR n sheet res material Silicon mat occno 1 temp val 325 x val 0 1 region occno 2 The following multi line statement extracts the p type sheet resistance of the first p n region in the top first occurrence of silicon for a cutline at x 0 1 where the first region is held at 5 0V The second region is held at 1 0V and the first interface Qss value equal to 1e10 extract start material Silicon mat occno 1 region occno 1 bias 5 0 x val 0 1 extract cont material Silicon mat occno 1 region occno 2 bias 1 0 x vals0 l extract cont interface occno 1 qss 1 0e10 extract done name P type SR p sheet res material Silicon mat occno 1 Xx valeU l regroneoccnosi Note This is an example of the multi line start continue done type of statement used to specify layer biases and Qss values It is recommended that you always let the Extract popup write this particular syntax The Qss value also specifies the material interface occurrence involved counting from the top down There can be any number of additional cont inue lines to specify the biases on other layers and the Qss values of other interfaces the last line done does the actual extraction 5 22 SILVACO International DeckBuild Extract 1D Max Min Concentration Extract the peak concentration of net doping within the first p n region of the top fi
605. tretch line at the center of that region If center false than the whole region is stretched See Generic Parameters for a list of materials X VAL lt n gt X Stretch from the vertical line x x val stretch value must be supplied with this parameter Y VAL lt n gt Y Stretch from the vertical line x x val stretch value must be supplied with this parameter STRETCH VALUE lt n gt STR VAL X STR VAL The device is stretched this much longer If the x val or y val parameters are used the stretch expands that line to the new width If x1 and x2 or yl and y2 parameters are used the stretch is distributed throughout the range given Y STRETCH VALUE lt n gt Y STR VAL Same as stretch value except stretch in the y direction If y val or y1 y2 are use stretch value is also in the y direction CENTER 2 boolean This cause any stretch to happened at the center of the specified region center false causes the stretch to be distributed over the region Center is defaulted to true unless x1 x2 or yl y2 parameters are used in which case it defaults to false SILVACO International 9 81 VWF Interactive Tools X1 lt n gt Start of x direction stretch Must use stretch value or length with this parameter X2 lt n gt End of x direction stretch Must use stretch value or length with this parameter Y1 lt n gt Start of y direction stretch Must use stretch value or y length with this parameter Y2 lt n gt End of y direction stretc
606. tructure Editing It is recommended that if the structure was made in ATHENA that no changes to the structure be made Ge material boundaries doping distribution If the structure was created in DEVEDIT then the command file de should be edited but not the structure file Upon completion of edits to a DEVEDIT command file both a command file and a structure file should be saved For this example and this purpose only the mesh should be changed Minor changes to the material boundaries will be done in boundary conditioning described below 9 20 SILVACO International DevEdit Display Zoom You can depress the left mouse button anywhere on the displayed structure and drag it to another location defining a rectangle between the two points Upon releasing the mouse button only the selected area is displayed zoom The bottom and right axes will have sliders for panning The Full View button on the right menu return the display to the entire work area Displaying the Doping Also on the main menu there are options to display or show attributes of the structure The first button defaults to Net Doping and the second button defaults to Off Select the second button to Fine This option shows a relatively fine gradation of doping throughout the structure Coarse Medium and Very Fine display options exist also but be aware that the finer the display the longer the refresh time takes Options under Net Doping include separate
607. tructure outfile nostex01_0 str zy plot the structure tonyplot mostex01_0 str set mostex01_0 set o devedit DevEdit version 2 4 0 R Set Meshing Parameters base mesh height 10 width 10 bound cond apply max slope 30 max ratio 100 rnd unit 0 001 line straightening 1 align points when automatic imp refine imp Net Doping scale log transition 1e 10 imp refine min spacing 0 02 constr mesh max angle 150 max ratio 300 max height 10000 max width 10000 min height 0 0001 min width 0 0001 constr mesh type Semiconductor default max angle 90 max height 0 1 max width 0 1 constr mesh type Metal default H constr mesh region 1 default constr mesh region 2 default constr mesh region 3 default Mesh Mode MeshBui ld base mesh height 10 width 10 bound cond apply max slope 30 max ratio 100 rnd unit 0 001 line straightening 1 align Points when automatic y structure outfile example2 str HHHHHHHHHHHHH VE Test Returns Vt Beta and Theta HHHHHHHHHHHHHHH go atlas set material models models cvt srh print next ne D Jj stop v cont run SS quit Line 1 G E EAER IN pause clear y restart kill Stop None FEE It is now Tue Oct 6 14 30 02 1998 Athena 4 3 0 R is executing on kokanee E Loading model file athenamod done ATHENA gt x FER 4 ATHENA started Figure 9 23 Running DevEdit in Batch Mode within DeckBuild after ATHENA Process Simulat
608. ts already exist and are deleted by the copy action The Files control button 1s replaced by a Data button whose default action 1s to store the layout back into the database All of the normal file control facilities are available on a submenu contained under this button The Write File simulator control button 1s retitled Write data Pressing this will display a popup from VIRTUAL WAFER FAB asking you to create the name of the mask data entry The Write to deck options are not available when used within the AUTOMATION TOOLS 10 2 3 Starting MaskViews From The UNIX Prompt To start MASKVIEWS from the UNIX command line prompt enter maskviews command line options Command line options are a series of switches that causes the initial MASKVIEWS displayed to be set different from the default File related options take two parameters and are e q file name sets the output default to the named file e f file name loads the named layout file The following option loads the named ATHENA grid template e g file name Options are available to adjust certain display parameters are as follows e mono force monochrome display mode e olwm format poppies for the OpenLook window manager normally the default e mwm format popups for the Motif window manager e usa use American spellings throughout normally default e uk use English spellings throughout default in GMT time zone The default target simulator can also b
609. ts seen in the popups and windows of TONYPLOT The syntax of the command language is tightly linked to the popups and their controls Each statement mimics an item on a popup or an input action When using a command stream you should be aware that e Plots must be selected when using the commands stream just as they do when using the normal GUI The Select command is used to do this e Changes are never seen until a Redraw statement is given This is like clicking on an Apply button e The command stream can be used at the same time as the normal GUI but only one command stream can be started at one time e The contents of set files are lines of command stream syntax Set files are therefore good examples of command stream syntax Also set files can be constructed offline using command stream syntax e When starting TONYPLOT from csh TONYPLOT must be the current foreground process for the command stream to start If TONYPLOT is not the foreground process it stops until you make it the foreground process This does not apply to loading set files e To finish a command stream type Control D SILVACO International 7 15 VWF Interactive Tools 7 8 The Plot Menu The Plot menu can be accessed either by clicking on the MENU button while the pointer is over a selected plot or by using the set of controls on the main frame When accessed with the MENU button the plot menu Figure 7 6 has a title that indicates the type
610. tton which submits these new values to TONYPLoT Any RSM plots are updated to use these new ranges and nominal values The Reset button resets the popup to state it was in when the Apply button was last clicked In other words if changes are made to the list that are not correct or are not needed click on Reset to put all values back to the way they were when the popup first appeared If the user defined values are to be completely discarded click on the Restore button This sets all values back to the default settings 1 e ranges and nominals are taken from the RSM data sets and user defined changes are cancelled Uses The Input Parameter Ranges popup affects the range over which values are taken for each input when RSM outputs are computed The sliders on the Production popup reflect the current range for each input Some models may only be valid for specific ranges of their inputs Since it 1s possible to exceed these ranges there is a feature which allows the valid range to be identified on a 1D plot see the RSM Display section 7 26 10 Input Distributions As RSMs are loaded into TonYPLOT a default distribution is assigned to each one This distribution represents the statistical spread of values that would be obtained for this input parameter in an experimental situation Using this data TONYPLOT can simulate real life input values by sampling data with the given distribution parameters The default distributi
611. ture file mos1 str drag the mos1 str icon onto the TONYPLOT icon If you want to load TonYPLOT and display the structure files mos1 str and mos2 str select the structure files and drag them onto the TONYPLOT icon MANAGER always uses the correct command line switches for the specified files 3 2 4 On Line Help 3 2 The on line manual displayed by pressing the Help button on the top of the main window provides an in depth description of the function and operation of all MANAGER features When first displayed the on line manual shows an index of all the major sections available The buttons along the top of the Help Display are used to navigate between the pages of the manual Selecting Return to index causes the initial main section index to be displayed The Section button contains a menu of all the major sections in the manual If you one of these sections then the topics for that section will be displayed You can then use the Sub section button to select a manual page to be viewed To print out the manual pages click on the Print button on the help display SILVACO International Manager 3 2 5 Customizing To use the customization options select the Attributes option from the menu displayed by clicking on the MENU mouse button while the pointer is over the files display window The Attributes popup will appear Figure 3 2 This allows you to change the attributes of the displayed files y Environment attributes Directo
612. tures Meshing Example 2 IDO MUS a 9 29 Circular Devices EE 9 32 Combining Two ATHENA Structures into a Single Device 9 30 ACA KEE 9 31 Advanced Topics DeckBuild zielt 4 3 Genere DECKS chem 4 3 Analytic Functions Location Dependent Variables sssessssssss 9 51 SILVACO International User Supplied Variables See also Roll Off Functions 9 51 Annotation A eer ed 1 34 gos cT IU 7 34 Vie EE 7 34 A os 1 34 SNOWING Nai orc EE 7 34 Special Characters EE 7 34 Statistics ue EEN 7 34 A S 7 33 See also TonyPlot ATHENA ri la 2 24 2 25 4 31 10 1 Gid VR E 10 15 Layout elle EE 10 16 See also Device Simulation Device Structure and Process Simulators RRE 2 24 2 25 8 26 9 6 See also Device Simulation and Device Structure A S 4 40 See also DeckBuild B Base Window Control Pariel A 9 4 Control Nie EE 9 4 AA A THES 7 7 Help E UNE 7 11 BEER Hielen EE 9 3 Main Panel Controls iii ld 9 4 A A e a 7 9 A eco a cpavsra scare qiaiciee MILAN IE acted ELE 7 10 Production Menu WEE 7 10 Properties ENEE 7 11 Beien EE 1 9 AZ BITS DE 1 9 See also DevEdit and TonyPlot Bipolar Extract eg dul T M 5 40 A cec prn 5 32 See also Device Extraction BOX PIOUS PH 1 32 See also Statistics Display Breakdown Voltage Calculation sssssssssse A 5 C Calculation Bee ie Le EE A 5 Sheet Resistance cccccsecceceseeeceeeeeceeeeesseeeesse
613. ty is tested If the impurity difference across the triangle is greater than sensitivity the triangle is broken into smaller triangles Parameters ID lt n lt Used to delete or modify an exist refinement If no id is supplied the first unused id starting from 1 is used DELETE Deletes the impurity refinement identified by parameter id IMPURITY lt c gt Specifies what quantity impurity is being refined i e Boron Arsenic Potential etc See Generic Parameters for a more complete description SENSITIVITY lt n gt If an impurity value changes more than sensitivity smaller triangles are created If an impurity s scale is logarithmic sensitivity is in powers of ten Impurities are really extrapolated using arc hyperbolic sine not using logarithms and then normalized There should be no noticeable difference on values greater than 10 times the transition value one level of sensitivity SCALE lt C gt Specifies which scale the sensitivity should use Different impurities quantities have different default scales See Generic Parameters Impurity for a default values Linear use linear scale Logarithmic log an alias for arc hyperbolic sine arc hyperbolic sine arc h sine use arc hyperbolic sine scale which is similar to a logarithmic scale TRANSITION lt N gt This value is used to modify the arc hyperbolic sine log scale Values below this value are considered insignificant Different impurities q
614. uantities have different default transition values See Generic Parameters Impurity for default values MINIMUM SPACING lt n gt MIN SPAC If a triangle is narrower than this it is not narrowed further If a triangle is shorter than this it is not shortened This parameter applies to all impurities currently being refined not just the impurity specified by this card 3 D Parameters Z lt n gt Refine at the specified z plane SILVACO International 9 71 VWF Interactive Tools Replaces Card ImpRefine Type c Value lt n gt Sensitivity lt n gt MinSpacing lt n gt Z lt n gt See Also MESH 9 13 11 INITIALIZE Clear existing device and load file Syntax INIT INFILE lt C gt Z lt POINT2D gt Z1 lt N gt Z2 lt N gt MESH lt BOOLEAN gt LOAD FILE NAME lt C gt TYPE lt C gt Z lt POINT2D gt Z1 lt N gt L2 lt N gt MESH lt BOOLEAN gt Parameters FILE NAME lt c gt file infile inf File name of a Silvaco standard structure file or a DEVEDIT command file TYPE lt c gt Override the automatic file type recognition and load file as the specified type SILVACO standard mas Silvaco standard structure file structure str Silvaco standard structure file card deck deck DEVEDIT command file MESH 2 boolean If mesh is set to false any mesh commands are ignored and structure files are loaded without their mesh This can greatly speed up load time The old me
615. ucture are saved while in DEVEDIT The command file is a complete object oriented history of events required to create the current structure To save a structure file click on the Silvaco Standard Structure File option before clicking on the Save file button To save a Command File click on the Commands option button before clicking on the Save file button The files are saved to the directory from where DEVEDIT was invoked A structure can be incrementally saved to a given filename by clicking left on the File button This is equivalent to selecting the Save option under the File menu 9 3 4 Difference Silvaco Standard vs Devedit A Silvaco Standard Structure File and a DEVEDIT file Command differ A Silvaco Standard Structure File constrains some information about each region a mesh describing the device and a list of impurities at each point This file type must be used to pass the structure to a simulator A DEVEDIT file contains the DEVEDIT cards instructions needed to create a device the analytic impurities functions mesh creation cards and DEVEDIT mode settings It does not currently support impurities including doping and results read in from a structure file Therefore if a structure file 1s read in a structure file must be written out or all the impurities not added during the current editing session are lost Subsequent releases will rectify this problem SILVACO International 9 5 VWF Interactive Tools When starting a
616. ults refer to the Defaults section e Load Defaults This button appears as an icon showing data flow from a disk to a popup Clicking on Load defaults causes the current settings on the popup to be loaded from the defaults file For more information on defaults refer to the Defaults section e Cycle When a choice item has many options a cycle button appears next to it Clicking on the Cycle button cycles through all the available options one by one and restarts when the last one is reached The choice item can be used as normal whether Cycle is present or not By holding down the Shift key when clicking on a Cycle button it is possible to move backwards through the list wrapping around to the end when the start has been reached SILVACO International 7 3 VWF Interactive Tools 7 2 Invoking 7 2 1 Overview TONYPLOT can be started independently from UNIX or from other simulator tools such as DECKBUILD SPDB or MANAGER In the case of the simulator tools starting TONYPLOT is accomplished by selecting the respective command button The ToNvPLoT base window Figure 7 2 appears if files are not immediately loaded when started TonyPlot 2 8 22 A File cl View cl Plot gt Tools 7 Print Properties cl Help a Version 2 8 22 c SILVACO International 2004 Loading file homesrobinj bjtex04_2 5tr 0K SILVACO International 2004 Figure 7 2 TonyPlot Base Window 7 2 2 Starting To start TONYPLOT at the UNIX pr
617. um value Once all inputs have been tested a plot of the results appears e STOP Click on this button to stop the analysis at any time All calculations are aborted and no result plot appears The Result Plot When the failure analysis has been run a barchart appears which is a form of the general TONYPLOT Stat plot The barchart shows the relative probabilities of each input being the cause of the failed values Note Each input is tested individually The analysis tries to find the one single input that could cause the specified failure in all outputs The highest bars show inputs that are most likely to have caused the failure s TONYPLOT also adds a set of labels to the plot These labels indicate the values of each input which would have generated the failed value if that input had been the cause of the failure 7 26 7 Synthesis In Synthesis mode TonYPLOT tries to find a value for each selected input that produces a desired set of outputs Two algorithms are provided to perform this reverse calculation a Levenburg Marquardt optimizer and a method known as Adaptive Simulated Annealing Setup Before starting the synthesis calculations the desired output values must be set Use the text field labeled Target Value to enter a desired value for the output currently selected in the list on the left Press the Return key to submit this value When all target values are entered correctly select the desired metho
618. umns This must be present but can be given as zero in which case TONYPLOT works out how many columns there are t is the number of column titles If not present it defaults to zero e no titles title X is the title that is assigned to the data in column number X These titles are optional but if given the number of titles must match the t parameter in the second line xij is a data value in row i column j Each column in the file represents data values for a certain quantity if no titles are given these quantities assume default names of User data 01 for the first column User data 02 for the second and so one The titles allow more meaningful names to be added 7 80 SILVACO International TonyPlot 7 23 5 Examples The following are examples of some user data files and descriptions of each These can be entered into a text file and tested with TONYPLOT if needed Equation This simple example plots a section of a curve of the equation y sin x This type of file is the simplest Vocem Bin x O e O NO 09983 41 9 9 07 SD 030942 47943 56464 64422 s LT EE 84147 e OOOO CO CO CH CH WO 0 J On OF WN r2 O 0 0 CHEN CO EH E CO O Transistor This example contains information about an NMOS transistor This example shows how columns are named 1 0 um NMOS Lava LU 2 2 gate bias V drain current A DO 208 14 d drug 0 2 AOR 0 3 Xx ped 0 4 1 0E 10
619. until another copy operation is done e Text may be copied to the clipboard from one application and pasted into an entirely different application e DECKBUILD s tty subwindow also supports cut and paste operations SILVACO International 4 17 VWF Interactive Tools 4 4 4 Using the TTY Subwindow The tty subwindow used to drive the simulation programs is a text based command window It accepts many of the same commands and has many of the same capabilities as the text editor Entering Commands Directly The execution control buttons provide the primary means of input to the running simulator but text typed directly into the tty subwindow can be used as well Place the pointer anywhere in the tty subwindow and click on SELECT If a simulator 1s running and is waiting for input a caret appears at the simulator prompt Commands typed at the keyboard are executed by the simulator The text of the current command line can be edited using the normal text editing functions explained above Editing The Contents Except for the current command line all lines in the tty subwindow are read only and cannot be edited The subwindow displays a log of the simulator input and output which can be scrolled using the scrollbar To search for a particular text string use the Find and Replace popup Bring up the tty Term Pane menu by placing the pointer anywhere in the tty subwindow and click on MENU This menu contains a number of items used to
620. uplicates the originals e Level colors Overlay plots can show each level in the same color if Single is chosen or use a different color for each if In Sequence is chosen e Number of Levels To avoid confusing plots the number of levels that can be added to an overlay is limited Choose unlimited to deactivate this feature e Display option Allows the choice of whether to use mark types for quantities plotted and color for the level or to use mark types for the level and color for the quantity 7 60 SILVACO International TonyPlot 7 19 6 General Colors Figure 7 39 General Colors Settings General colors are colors of items that are not related to any specific data type Each can be specified independently and set to any color that TONYPLOT supports e Window The color of the subwindow e Background The color of the plot background e Foreground The color of the plot foreground e Dark border The color of borders on unselected plots e Light border The color of borders on selected plots e Zoom The color used when dynamically defining areas lines etc on the plot Examples are zooming and placing cutlines The color specified here may not be the color observed if the color on which the lines appear is not the actual Background color This is due to the graphics operation used If it is found that the defining lines are hard to distinguish from the color on which they are drawn chan
621. ure A maximum potential Y position is found for every X step of 0 1 microns These Data format files can be loaded into ToNvPLoT ccd to represent a line of maximum concentration across a device extract name 2 Total max pot max conc file impurity potential x step 0 1 material silicon outiile totaleone dal 5 24 SILVACO International DeckBuild Extract Creates a Data format file plotting the position of the maximum potential in any material for the specified box limits A maximum potential Y position is found for every X step of 0 2 microns extract name limit max pot max conc file impurity potential x step 0 2 outfile limitconc dat x min 0 x max 7 y min 0 y max 0 09 Note The x step does not refer to cutlines but to the number of X coordinates used A value of 1 representing stepping 1 micron in X for every max Y value calculated QUICKMOS CV Curve Extract a MOS CV curve ramping the gate from 0 to 5 volts with 0 volts on the backside and the device temperature set at 325 Kelvin default 300 K This example creates a curve that 1s stored in file cv dat and can be shown using TonYPLOT To bring up TONYPLOT on this file an easy way is to highlight the file name and then click on DECKBUILD s Tools button TONYPLOT starts and loads with the file automatically extract name CV curve curve bias ldcapacitance vg 0 0 vb 0 0 bias ramp vg bras step 0 25 bras sStop e5 0 x val 0 l temp val 325 o utfiles ov dat
622. ure step p step CONCENTRATION FUNCTION Y X Zj lt c gt CONC FUNC Y X Z Possible values are shown in the table below Warning These values must match exactly Do NOT abbreviate F lName ShortNeme O O mesemuemes 000 SILVACO International 9 69 VWF Interactive Tools COEFFICIENT Y X Z lt n gt CONC COEF Y X Z Concentration coefficient is valid only if concentration function is NOT a 1D profile If the concentration function is a distance function this is the distance in microns between the peak value and the reference value Otherwise it is a function specific coefficient CONCENTRATION PARAMETER Y X Z lt c gt CONC PARAM Y X Z If the concentration function is a 1D profile then it must be one of the following approximation functions These functions specify the points between data points and at the end of the specified data If the concentration function is not a 1D profile then CONCENTRATION PARAMETER Y X Z is an alias for COEFFICIENT Y X Z CONCENTRATION SCALE FACTOR Y X Z lt n gt CONC SCALE Y X Z Concentration scale factor is valid only if concentration function IS a 1D profile This allows the rolloff to be shortened value lt 1 0 or lengthened value gt 1 0 using this linear scalar factor The default value is 1 0 of coarse COLOR lt n gt Color used to display region during DEVEDIT in X color windows mode This is an RGB bitmap with eight bits colper color
623. urface of the regions only Draws the mesh for all the elements 3D Volume Draws the mesh in the specified cyclindrical volume Use the X Y Z and Radius fields to specify the cylindrical volume 8 10 SILVACO International TonyPlot3D 8 4 1 Regions The Region Display Mode Figure 8 5 is the default display mode If you select Material each material will be assigned a color If you select Region one color will be assigned to each region in the data In either case a legend is provided to show each color assigned to material or region names TonyPlot3D Display Modes Figure 8 5 Regions Display Mode SILVACO International 8 11 VWF Interactive Tools 8 4 2 Contours The Contour Display Mode is shown in Figure 8 6 Contours are shown as a colorization of the exterior faces of an object Contours are drawn only on exterior portions of the structure Figure 8 7 shows an example of these contours To observe the inside values perform a cutplane see Section 8 5 2 Cutplane for more information The Quantity option box holds all of the quantities present in the data set Choose one of these quantities for contouring TonyPlot3D Display Modes Sails _ AcceptorConc Limits Auto Fix lesa All Materials Linear Step ped Mapping Auto Fix Ligen LOG Palette Blue to Red Nb Colors Figure 8 6 Contours Display Mode Data Constraint Settings The Limits Group Box controls
624. urrently Executing Line Init from History is used to re initialize the simulator from some previously run line in the input deck DECKBUILD automatically saves files as each line in the deck is run This permits transparent movement back and forth in the input deck if you need to back up to try something again History properties including the ability to disable history are accessed by clicking on the History Props button See Section 4 9 History for more information SILVACO International 4 21 VWF Interactive Tools Plot Current Structure is used to plot either the current structure or any selected structure It provides a shortcut to Plot on the Tools menu The following occurs when you click on this button e If there is text selected highlighted anywhere on the screen DECKBUILD takes the text as filename of a file to plot DECKBUILD starts up TONYPLOT on the named file e If no text is selected and a simulator is running DECKBUILD causes the simulator to save its simulation data and then starts TONYPLOT using that data This does not disrupt any lines of input deck waiting to be executed by the simulator e Optionally choose a set file by clicking on the Plotter Props button The set file is used to record a given plot s layout such as scaling zoom number and type of plots shown After creating a set file you can use it to re create the same layout when using the same or any other plot data A set file is often useful
625. use button gate Next to In Material Type select Semiconductor Set Depth to 0 1 This procedure has selected the semiconductor underneath the gate to a depth of 0 1 microns from the silicon surface as the area for mesh refinement Next depress Constraints which displays the same Mesh Constraints menu seen previously Set Max Height to 0 02 and Max Width to 0 04 Click on Apply then click on MeshBuild At this point the structure has a mesh that is better suited for device simulation The original mesh was created primarily for process simulation which has different requirements including dense mesh near implant ranges silicon oxide interfaces along diffusion regions and oxidation areas For device simulation the priorities include non obtuse triangles in the semiconductor p n junction boundaries and areas of high electric field and carrier mobility such as the channel region in a MOSFET and do not include oxide shape electrode shape and regions far from electrical current Note See S PISCES chapter of the ATLAS User s Manual for details on typical mesh size required for MOSFETs 9 26 SILVACO International DevEdit Saving The File The file can be and should be saved in two formats the structure file and the command file The structure file is a format used by other Silvaco programs including ToNvPLoT and ATLAS so it is necessary to save the structure file for continued device simulation The command file is a list o
626. ute Low density plots are quick to calculate and draw but provide only approximate plots For total control of RSM plots and access to a selection of analysis tools the VWF PRODUCTION MODE should be enabled A description of these features can be found in the Production Mode section Without Production Mode the benefit of RSM plots is greatly reduced 7 12 1 1D RSM Graphs When RSMs are plotted in the 1D mode any one input can be selected for the x axis and any output s can be selected for the y axis All RSMs that contain both the input and output are plotted Show There are a number of ways to display data on 1D RSM plots and these are selected from the row of icons near the top of the control panel Points Lines The first two icons draw points and line segments at or between sampled points to draw the curve SPC limits can be added to the plot if this information is available for the outputs being plotted The next icon activates the Valid X Range marker showing the range of the input that is valid for the model being used the drawn range can be extended in certain cases to values outside the valid range The next icon represents Measured Points which are plotted if measured data was passed with the RSM Next the icon with the zero and one normalizes all outputs to a range between 0 and 1 for easier comparison of different models The last icon activates a Gunsight which can be used to track x and y coordinates along the
627. ute that will be written as the datatype of masks elements when exporting Datatype is ignored on import e Name attribute specifies the GDSII PROPATTR tag number that is used to hold the mask labels e Phase attribute and Trans attribute specify the GDSII PROPATTR tag numbers that are used to hold the mask phase and transmittance values You can disable all three attribute options for import export using the check boxes displayed alongside There are two properties that alter the way CIF format layouts are loaded Limit calls and File preview Limit calls defines how many substructure levels are descended when loading a CIF structure A check box enables disables the limit and slider allows you to define the limit File preview selects whether to display the substructure previewer when you press the CIF file Load button 10 8 8 Color Properties This property section allows the colors used for each edit layer to be changed from their default values The slider labelled Number is used to select a layer number whose colors are to be altered The two fields update the color selections for the selected layer Borders highlight shows the color used to trace around the edge of each polygon on the layer This 1s also the color used in illuminated sections of the 3D mask displays Fill shadow is the color used to fill each polygon on the layer It is also the color used to indicate shadowed areas of masks on the 3D mask displays 10 8 9 Notes On Mo
628. ve help information 9 2 3 Main Panel Controls Controls located between the Regions panel and User Added Impurities panel control how regions and impurities are displayed They perform the following functions e Highlight Permits highlighting selected material region in red e Show Mesh If a mesh exists it can be shown or not shown to speed up display e Black amp White Allows making a black and white picture on a color screen e Border Shows a black border around regions It can be turned off so regions are not separated by a border e Border Points Shows key points used to create the mesh e Grid Shows intersect points between scales on main panel e Fill Regions How regions should be filled in e Off Regions are not filled e Pattern A fill pattern is used to fill region Ordinarily used only in Black White mode e Solid The region s color is used to fill region This option is not shown on Black White terminals e Show Net Doping Permits selection of how doping is displayed normally coarse or off is selected e Net Doping Legend Permits positioning of a legend in one of eight positions on the main panel e Impurity Junctions Shows where the junctions are Only shown when a mesh exists e Scale Permits display or not of scale on each border of the main panel e Number of Points Displays number of points in current structure e Number of Triangles Displays number of triangles in curre
629. ve the current display structure to display it from the selected position 8 4 SILVACO International TonyPlot3D Table 8 3 Main Menu Options Menu Title Tools Properties Help Object Editor Cutplane Probe Ruler Camera Colors Fonts Legend Lights Mouse Structs Load Save Reset Default About Tonyplot3D TonyPlot3D Help Release Notes SILVACO International Description Opens the Display Modes Window This is used to change the dis play mode and viewing parameters Displays a hierarchy of the objects in the current scene and struc ture Starts the Cutplane Tool and shows the 2D cut as it would be exported to TONYPLOT Starts the Probe Tool and shows the picked object using the left mouse button Starts the Ruler Tool and shows the quantities of the picked object using the Control key and the left mouse button Edits camera settings Edits color settings of the structure and the plotting area Edits font settings of the plotting area Edits the legend settings Edits lighting settings Edits mouse and automatic movement settings of the plotting area Edits outline mesh transparency and drag type settings of the structure Loads the local set of properties in HOME masterrc file Saves the set of properties locally in HOME masterrc file Resets the properties to the default from the installation directory Shows TONYPLOT3D version information Displays the user
630. vg qss 0 curve AXIS FUNC depth AXIS FUNC lt IMPURITY gt lt MATERIAL gt mat occno lt EXPR gt x val lt EXPR gt y val lt EXPR gt region lt QSTRING gt xmin EXPR xmax lt EXPR gt OLE OL um curve lt AXIS_FUNC gt depth lt AXIS_FUNC gt srp material sulicon polysilicon mMals oceno lt EXPR gt x val lt EXPR gt y val lt EXPR gt region lt QSTRING gt xmin EXPR xmax EXPR HELIO vu ou um uu curve lt AXIS FUNC DEV SAXIS X AXIS FUNC DEV AXIS kb xmin lt EXPR gt xmax lt EXPR gt deriv lt AXTS FUNC DEV AXIS AXIS FUNC DEV AXIS lt INTEGER gt a SILVACO International 5 11 VWF Interactive Tools 5 12 lt AXIS_FUNC gt edcurve lt DEFOCUS_AXIS gt lt CRITICAL DIMENSION_AXIS gt The integer is of course the nth derivative and its default value is 1 DOSE AXIS X dev lt EXPR gt datum lt EXPR gt x step EXPR lt AXIS_ARG gt lt AXIS_ARG gt SBAPI AXIS ARG AXIS ARG lt E APRS lt AXIS_ARG gt lt AXIS_ARG gt SBAPI AXIS ARG AXIS ARG SEDI AXIS ARG AXIS ARG SBAPI AXIS ARG AXIS ARG abs log SQL atan SBXPIS NUMBER Svariable deckbuild set variable expr expr expr expr NS lt AXIS_ARG gt lt EXPR gt lt AXIS_ARG gt lt AXIS_ARG gt
631. viated but they must be long enough to be recognized For instance the save command may be shortened to sa but not to s because that would not distinguish between save and sweep If the value contains whitespace it must be enclosed in quotes For instance range 1 0e15 1 0e19 13 But if the value is a single block of text there is no need for the quotes This range can be entered as range 1 0e15 1 0e19 13 DBINTERNAL regonizes the following commands B 5 1 doe Syntax doe type lt doe_type gt parameter lt paraml gt range center delta parameter lt param2 gt range center delta Description The trials of a DOE experiment correspond to various points on or near a hypercube around some origin in parameter space The results can be used to create a model for the dependent variables over the hypercube For example suppose you had a process that generated FETs with gate lengths in the range 95 105 um and recess depths in the range 45 55 um The parameter space is a square with corners 95 45 95 55 105 45 and 105 55 Suppose you want to know how breakdown voltage is affected by these parameters If you knew there were a simple linear relationship you could simulate at the midpoint and the two points where the axis intersected with the hypercube 100 50 105 50 100 55 and fit a simple linear model through the results If you thought there were a more complex relationship you would simulate
632. views Layout files Directory master Filter lay O daveh O athena O turbosys Donat O index LST bj File cmos lay Figure 10 11 File Loader Popup This popup contains text fields showing the current directory path a file name filter and a list of all files that match the filter in the current directory The list may also show all the directory entries in the current directory depending on the properties setups The icon type next to the name on the list shows what type of each named item Filing system access is provided through options on the Files menu see Table 10 1 Table 10 1 File Menu Options Objects user defined polygons Clicking on the load or save buttons on the popup causes relevant data to be loaded from or saved to file named in the File text field This field 1s updated whenever you select a file item from the scrolling list or entered manually Double clicking on a file name in the list also causes the file to be loaded The current directory can be changed either by typing a new name into the Directory field or by double clicking on a directory name in the list The parent directory is displayed as an upwards arrow labelled go up a level Warning messages appear if you perform a load operation when MASKVIEWS already contains information or perform a save operation to a file that already exists 10 18 SILVACO International MaskViews 10 6 2 Viewing Cutline Files Sele
633. w RP rrr 6 24 002 ENEE cameos udi a prr Unc UON CEN PEDRO Reed Exod lores 6 24 6 60 DEI CIN ROWS aeo caede de tein RR Ld Ai Dd La 6 24 0 0 4 Mouseless Operation quiae de e arc n eis dws ted eae eas ede er qud a a o 6 25 GFR g 10 ppc TL 6 26 5 9 KR AAA aaa e n a re ai 6 26 692 ele A NEW EE EE 6 26 6 9 3 Working With An Existing KEE 6 27 6 9 4 Saving The Existing File sau acce ip wane uri Tn ae x arb caen voe Mp hort xai eA 6 27 5 10 PROUN src hates wap Palen Ane tee bet niu ds Rane wag po d ERE 6 28 5 10 14 OVEMIEW oa a rd 6 28 6 1 Optimization TUMN DEE 6 30 SILVACO International IX VWF Interactive Tools Chapter 7 ei VIE 7 1 LE e EE 7 1 TA ba OMI belo Detain Rec ES et Re nance ant ak wet oes eerie ome ee aaa eee mA ME 7 1 ARA n aeee a A E E E 7 2 BES TOMIN VEH 7 2 TA Standard ontolS uis car e rach ont eae haha Sas prora Do a nee ea eee ee Ges eee Toes EE 7 2 52 INVOKING EE 7 4 Tee Ac TEEN 7 4 Eegen Dee gp ha het eae pod A dase were eA sek 7 4 3 Ihe Base WIBOOW 24 5 2 scuute a cito da ce nee wed pee sea Rathore EE 7 7 Ta ESO MI Eege A FN Oo AD dE ee OO ee 7 7 i Ple Me EE 7 7 ENEE een da da ay tenia aaa E tlh ee edens E meek cased dat AE 7 9 E OTTELE EE 7 9 O Keel E RE 7 9 TOs Os VIC MU iS ere ache A dad nade Net peu aei Gg 7 10 1 94 NE ProduciomMenU WEEN 7 10 30 PIOPpemties d TEEN 7 11 Fo le le CT EE 7 11 14 Ine File LOGGER EEN 7 12 TA LOA IA MOS xot Staci bob est Odie AE Linda
634. w the basic Silvaco standard structure file I O control of DEVEDIT To load a file select the Load menu option A popup window appears indicating a Directory name a filename and a Filter type Two types of file can be loaded into DEVEDIT First a Silvaco Standard Structure File that contains a description of the entire structure to be loaded Second a Command file which contains the a complete list of instructions developed as operations performed to create a structure If you are starting from a 2 D simulator only you will not have a Command file to load If starting from a point previously run in DEVEDIT a Command file may exist Command files can be distinguished by the filename extension de To load a Silvaco Standard Structure File pull down the File menu and choose Load In the new window set the filter to str unless you do not end all your Silvaco Standard Structure Files with str Set the current directory and file name if need Currently the mesh in the Silvaco Standard Structure File is ignored Therefore you must put on a new mesh before saving the structure file 9 3 3 Saving a Silvaco Standard Structure File DEVEDIT can save both structures and Command files Saving a structure means the object displayed on the screen is saved to a Silvaco Standard Structure File str This is done only after a mesh has been generated Saving a command file means that the complete sequence of events required to arrive at the current str
635. ways used by extract to measure material thicknesses to meters used by UTMOST The set statement performs the arithmetic not in a simulator statement Finally the value of the result is substituted in the device TOX command In the case of the VWF the tox thickness is measured in an input deck fragment run separately from the UTMOST input deck The VWF remembers the value of tox and all other extracted variables and passes it down to all other children fragments Therefore it can still be used at any later point in the simulation thread In the VWF environment the init infile filenames are substituted with automatically generated filenames that contain all IV simulation data from all device simulations that feed into the UTMOST test See the VWF manual for more information on how to connect device tests to UTMOST tests It is important to note that the VWF substitutes all I V data sets saved from all connected device tests all data that was saved with a log outfile command in the device tests Unusual results may occur in the case where many extraneous files have been saved in the device tests In that case remove the extraneous log outfile statements as necessary Runtime Output Example UTMOST 4 4 START UTMOST SIMULATION 4 4 UTMOST gt utmost type mos ER X OU IW BI PARA ME TEREX TRACT ION S OF TWA RE Version 10 04 Batch mode Preliminary Version Copy reat 1999 T9903 hook 1992 0199359 1994 SILVACO
636. while holding down the SHIFT key on the keyboard This allows the key box outline to be dragged to any position in the window When the mouse button is released the view is redrawn with the key in the new position The position of the key applies to all plots However the entire view 1s not be redrawn when a key has been dragged The other plots show the key in its new position only when they are redrawn 7 70 SILVACO International TonyPlot 7 20 4 Drawing Styles There are some TONYPLOT properties that control how keys are drawn These are described in the Properties section but are outlined again here for reference e Key type Can be transparent or opaque Transparent keys allow the plot underneath to be seen to some extent whereas opaque keys overwrite the plot underneath them Only opaque keys are used in hardcopies e Function label When a function is plotted it can be indicated on the appropriate key with either its name or its definition For example suppose function 1 has been set up as log current 10 If Name is chosen the key says Function 1 but if Definition is chosen it says log current 10 SILVACO International 7 71 VWF Interactive Tools 7 21 The Command Stream TONYPLOT supports an input language that 1s used to control the behavior of the program by using text commands only This language is called TPCS for TONyPLOT Command Stream It is TPCS that is used in set files If a set file is examined
637. y and a text field used to search for set files Adjust the directory name and directory filter if necessary Click SELECT over the name of the desired set file in the scrolling list If none are desired ensure that no entries are selected de select a selected list entry by clicking SELECT on it again If an entry is selected it is used as the set file on subsequent plots ei Plotter Set Files Directory tmp mnt main weston marting F Filter set optexO set mos2ex06_0 set ELE Filename optexoz2 set Figure 4 21 Plotter Set Files Popup Since Plot structure is the default Tools menu item simply click SELECT on Tools to activate it This is easier than descending through two levels of menus Also see Plot structure under Options on the Main Control popup to determine when interactive plots will be made if many lines from the input deck are waiting to be simulated An option to plot can be set immediately or at the end of the simulation The default is immediate 4 8 2 Starting Maskviews DECKBUILD allows you to bring up MASKVIEWS with an optional layout file To choose the layout file select Start MaskViews from the MASKVIEWS pull right menu The MaskVIEWsS Layout Files popup appears Figure 4 22 This contains a scrolling list of layout files in the current directory and text fields to search for layout files Find and select the layout file of choice then click on the Start MaskViews button on the popup Figure
638. y contacting the local Silvaco representative Each material is assigned a different color by default This can be changed if two regions have to be distinguished by selecting a color from the Color menu on the Add Region panel as shown in Figure 9 28 Colors are selected purely for DEVEDIT visualization The color information is not saved into the final structure file and so 1t 1s not applicable for later applications i e TONYPLOT Add Region Add Mode Etch then Add Add Only Diagonal Lines Allowed Disallowed Name toptional Electrode Electrode names r Material Silicon Color Pattern EE Figure 9 28 Color Menu SILVACO International 9 35 VWF Interactive Tools 9 7 DRAWING REGIONS 9 7 1 Overview A region is normally defined by a polygon which denotes its outer boundary This boundary can be drawn by clicking the left mouse button on the first point of the polygon The point is placed when the left mouse button is released not when it 1s pressed This 1s to match the feel when points are dragged and is described later This starts a new polygon After placing the first point a line is rubber banded to the mouse until the second point is placed After that two lines are rubber banded one from the previous point to the mouse the other from the mouse to the first point creating a polygon Points are added until the Done Polygon button or the right mouse button 1s clicked When the Done Polygon butto
639. y equations for electrons and holes and Poisson s equation for potential self consistently using the Gummel method The following physical models are taken into account by QUICKBIP e Doping dependent mobility e Electric field dependent mobility e Band gap narrowing e Shockley Read Hall recombination e Auger recombination QUICKBIP is fully automatic so that it is unnecessary to specify input biases QUICKBIP calculates both forward and inverse characteristics of the BJT For an n p n device these sets are as follows l Veb 0 3 Veb final Veb_step 0 025 Vcb 0 V 2 Vcb D e Vcb final Veob stepse 0 025 Veb 0 V 9 Veb final and Vcb_final depend on the particular BJT structures usually about 1 1 5 high injection level For a p n p device all signs are changed 5 42 SILVACO International DeckBuild Extract 5 10 Using Extract with ATLAS Do the following to calculate extract parameters during an ATLAS simulation 1 Include an output statement in your original input deck that specifies the parameters of interest e g output charge to specify charge concentration You cannot extract a parameter unless you specify that parameter either explicitly or by default in an output statement 2 Insert an extract statement to extract the desired parameters see Chapter 5 DeckBuild Extract There are some differences between the EXTRACT syntax and the syntax used by the ATLAS output statement To extr
640. yboard To create a new cutline with exact start and end coordinates enter the start and end points into the text fields supplied and click on Return This creates the new cross section from the line so defined If more than one mesh plot is selected when a cutline is created a cross section is calculated for each of them and the appropriate number of new plots will be generated Creating From Multiple Plots If more than one mesh plot is selected when a cutline is created a cross section is calculated for each of them and the appropriate number of new plots is generated If a cutline is made from an overlayed mesh plot the cutline plot generated 1s also an overlay plot with each level showing the cutline profile from each level in the mesh plot The Section The cross section created displays the profile of the quantity that was contoured on the mesh or shows a default profile if no contours were drawn This new plot can be controlled just like any other cross section plot All the quantities that were present in the mesh are also available in the cross section Default titles show the mesh data file from which the cut was made and the start and end positions of the line Interface cutlines create an overlay plot from a single mesh plot Each level in the overlay represents profiles from one of the materials present at the interface For example an interface cutline taken along an oxide silicon interface creates an overlay cross se
641. yout editor and load the supplield layout file If no layout file is specified MASKVIEWS is invoked with no data Examples This statement plots a layout file which should be in the current directory SILVACO International 4 69 VWF Interactive Tools maskviews layout lay See Chapter 10 MaskViews 4 16 12 SET Sets the value of a user defined variable or clear all existing Syntax set variable set clear Description The set command is used to set the value of a user defined variable The value can later be substituted using substitution which replaces the variable name with its value when the variable 1s value lt expr gt nominal max lt expr gt lt expr gt nominal min lt expr gt lt expr gt nominal ave lt expr gt lt expr gt nominal log lt expr gt nominal logl0 lt expr gt nominal sort lt expr gt nominal abs lt expr gt nominal exp lt expr gt nominal atan lt expr gt nominal preceded by a dollar sign or by the at sign variable is a user defined variable name It may contain spaces or algebraic operators 4 if specified with quotes expr is an algebraic expression consisting of numeric constants substituted variables algebraic operators and or the built in functions shown set commands can be used in conjunction with extracted values If a varia

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