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Data Flash Access Library
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1. Data Flash USER FDL hardware background rive FAL BUSY Blank lt Check FAL_Handler AE FAL_BUSY 4 j FAL Handler Write FAL BUSY x FAL Handler au FAL BUSY Verity s FAL Handler FAL_OK E 24 NE S AS 15 Data Flash Access Library 2 5 3 Figure 2 7 Background operation blank check verify 2 5 4 Figure 2 8 No background operation for read command R01USO0005ED01 02 User Manual Background operation blank check verify Same procedure as for erase the verify or blank check will be performed in background Data Flash USER FDL hardware background sew d FAL BUSY NN Blank FAL_Handler Check Verify FAL_BUSY p NE NE FAL OK D No background operation for read command The read command doesn t use the background operation It s directly finished after the request acceptance USER FDL oe FAL OK 24 NE S AS Data Flash hardware background 16 Data Flash Access Library 2 6 Suspension of block oriented commands erase In cases of systems working under critical real time conditions immediately read write access to the data is a must In such cases separate request variables must be defined for word command accesses and block command access
2. 10ms time slize potential FAL requester MyTask D 10 while true R01US0005ED0102 ENESAS 28 User Manual Data Flash Access Library 3 3 2 6 FAL_GetVersionString Description This function provides the internal version information of the used library Interface REC version __far fal u08 far FAL GetVersionString void Interface IAR version af func fal ule far FAL GetVersionString void Pre condition None Post condition None Argument Argument Type Description None Return types values Argument Type Description fal u08 far Pointer to the first character of a zero terminated version string Usage REC version far const fal ong my version string my version string FAL GertVersiconstringi Usage IAR version fal ugg far my version string my version string FAL GerVersionStringi R01US0005ED0102 ENESAS 29 User Manual Data Flash Access Library Chapter 4 Operation 4 1 Blank check The blank check operation can be used to check if all bits within the addressed pool word are still erased The user can use blank check command freely The blank check command is initiated by FAL_Execute and must be continued by FAL_Handler as long as command is not finished request status updated Table 2 Status of FAL_CMD_BLANKCHECK_WORD command Status Class Backgr
3. Return types values Argument Type Description FAL ERR CONFIGURATION when descriptor data are not plausible FAL OK when descriptor correct and initialization successful fal status fal status t Usage fal status t my status my status FAL Init amp fal descriptor str if my Status FAL OK FDL can be used else error handler R01US0005ED0102 RENESAS 24 User Manual Data Flash Access Library 3 3 2 2 FAL_Open Description This function must be used by the application to activate the data flash Interface REC version void _ f r FAL Open void Interface IAR version _ far func void FAL Open void Pre condition FAL Open does not check any precondition but FAL Init has to be executed successfully already Post condition Data flash clock is switched on Argument Argument Type Description None Return types values Argument Type Description None Usage FAL Open R01US0005ED0102 ENESAS 25 User Manual Data Flash Access Library 3 3 2 3 FAL Close Description This function deactivates the data flash Interface REC version void _ far FAL Close void Interface IAR version _ far func void FAL Open void Pre condition None Post condition Data flash clock is switched off In case of FAL and EEL usage both FAL Close and EEL Close must be called
4. ERASE 0x10 0x04 configuration error related status FAL ERR PARAMETER 0x20 Ox00 FAL ERR CONFIGURATION 0x20 0x01 FAL ERR INITIALIZATION 0x20 0x02 FAL ERR COMMAND 0x20 0x03 FAL ERR REJECTED 0x20 0x04 fal status t Status value Description FAL OK default value ready no error detected FAL BUSY request is accepted and is being processed FAL ERR PROTECTION access outside permitted pool area FAL ERR BLANKCHECK specified flash word is not blank FAL ERR VERIFY specified flash word could not be verified FAL ERR WRITE write is failed FAL ERR ERASE block erase is failed FAL ERR PARAMETER not relevant for the FDL defined for future improvements FAL ERR CONFIGURATION Wrong values configured in descriptor FAL ERR INITIALIZATION FDL not initialized or not opened FAL ERR COMMAND wrong command code used FAL ERR REJECTED when FDL busy with another request 3 2 4 Structured type tal request t This type is used for definition of request variables and used for information exchange between the application and the FDL A request variable is passed to the FDL to initiate a command and can be used by the requester EEL application to check the status of its execution FAL request type base type for any FAL access typedef struct fal u32 data u32 fal ul index ul fal command t command
5. certain rate and malfunctions under certain use conditions Further Renesas Electronics products are not subject to radiation resistance design Please be sure to implement safety measures to guard them against the possibility of physical injury and injury or damage caused by fire in the event of the failure of a Renesas Electronics product such as safety design for hardware and software including but not limited to redundancy fire control and malfunction prevention appropriate treatment for aging degradation or any other appropriate measures Because the evaluation of microcomputer software alone is very difficult please evaluate the safety of the final products or system manufactured by you 10 Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product Please use Renesas Electronics products in compliance with all R01US0005ED0102 ENESAS 2 User Manual applicable laws and regulations that regulate the inclusion or use of controlled substances including without limitation the EU RoHS Directive Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations 11 This document may not be reproduced or duplicated in any form in whole or in part without prior written consent of Renesas Electronics 12 Please contact a Renesas Electronics sales office if
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7. function the whole flash access is concentrated to two functions only FAL_Execute and FAL_Handler 3 3 4 Basic functional workflow To be able to use the FDL execute pool related commands in a proper way the requester has to follow a specific startup and shutdown procedure Figure 3 1 Basic workflow flow eegen Mat ON Power OFF 3 ee E FAL_Init OFF og e FAL Open FAL Close FAL_Execute CMD where CMD READ_WORD status NOT busy WRITE_WORD BLANKCHECK_WORD IVERIFY_WORD ERASE BLOCK FAL Handler 3 3 2 Interface functions The interface functions create the functional software interface of the library They are prototyped in the header file fdl h R01US0005ED0102 RENESAS 23 User Manual Data Flash Access Library 3 3 2 1 FAL Init Description Initialization of all internal data Interface REC version fal status t _ fer FAL Initiconst __ far tal O6scoriptor E descriptor pstr Interface IAR version f r func fal status t FAL Init const far fal descriptor t fart descriptor pstrt Pre condition None Post condition Initialization is done Argument Argument Type Description Pointer to the descriptor describing the FDL configuration The virtualization of the data flash address room is done descriptor pstr fal descriptor based on that descriptor The user can use different descriptors to switch between different FDL pool configurations
8. inside the same 64 KByte page Descriptor configuration partitioning of the data flash Before the FDL can be used the FDL pool and it s partitioning has to be configured first The descriptor is defining the physical virtual addresses and parameter of the pool which will be automatically calculated by using the FAL POOL SIZE and EEL POOL SIZE definition Because the physical starting address of the data flash is fixed by the hardware the user can only determine the total size of the pool expressed in blocks Also the physical size of the pool is limited by the hardware and must not be defined by the user Also the physical size of a flash block is a predefined constant determined by the used hardware The first configuration parameter is FAL POOL SIZE The minimum value is 0 and means any access to the FDL pool is closed The maximum value in case of 78KOR Fx3 is 8 means 8 blocks 16 Kbytes The other configuration parameter is EEL POOL SIZE the size of the EEL pool within the FDL pool used exclusively for Renesas EEPROM emulation library only The minimum size of the EEL pool is 0 This means the complete FDL pool is occupied by the user for storing data But also when a proprietary EEPROM emulation is implemented by the user the complete pool has to be reserved for it by specifying EEL POOL SIZEzO The maximum size of the EEL pool is FAL POOL SIZE Notes The USER pool and EEL pool are complementary This means the USER pool i
9. to write again into this block after writing the data meaning the flash word could FAL ERR VERIFY normal not be verified reason flash problems remedy meaning FAL ERR PROTECTION heavy reason remedy meaning FAL ERR REJECTED normal remedy erase the block and try R01US0005ED0102 3 NE SAS 33 User Manual Data Flash Access Library to write again into this block request is being processed request checked and FAL_BUSY normal EZ accepted nothing call remedy FAL_Handler until status changes request was finished regular no problems during reason command execution happens remedy nothing meaning meaning normal R01US0005ED0102 ENESAS 34 User Manual Data Flash Access Library 4 5 Erase The erase operation can be used to erase one block of the related pool After starting the erase command the hardware is checking if the addressed block is already blank to avoid unnecessary erase cycles After that the erase command is initiated The max number of erase retries is 19 Table 6 Status of FAL CMD ERASE BLOCK command Status Class Background and Handling FDL not initialized or meaning not opened wrong handling on user FAL ERR INITIALIZATION heavy reason side Initialize and open FDL before using it request cannot be accepted block number outside the corresponding pool
10. 0102 ENESAS User Manual Table of Contents Background operation Erasel see Background operation wrttel seen Background operation blank check verify sssss No background operation for read commande Library specific simple type definitions eeseeesssss Enumeration type fal command TN Enumeration type fal status t Structured type fal request t Structured type fal descriptor t Basic functional worktflow Interface e Lee EE Operation WEEN Chapter5 FDL usage by user application sssssessseeeeee enne 36 5 1 aieo 36 5 2 Special consideration S entente trennen nnns nnne nenas 36 5 2 1 Reset CONSISTOMGCY isc T m 36 5 2 2 EEL FDL or FDL On vies toii cetera tine Do p rre DERE aae ANA 36 5 3 ET 37 5 3 1 Library for IAR Compiler enne nnne nnne nsns nnne 37 5 3 2 Library for REG Comnpller eet anbaan aa abaa ae pae 37 5 4 edel DEE 38 5 4 1 Einker Sectiols etos o uenenum EMI IM 38 5 4 2 Descriptor configuration partitioning of the data flash eeeeseesesrneesrrssrernsenns 38 5 4 3 IS LEE 38 5 5 General E 39 5 5 1 General flow Initialization sssessssessese eene 39 5 5 2 General flow commands except read 40 5 5 3 General flow read commande 41 5 6 Example of FDL used in operating systems sse nenne
11. 05ED0102 ENESAS 31 User Manual Data Flash Access Library 4 3 Read The read operation can be used to read the content of the addressed pool word It is initiated and finished directly by FAL_Execute FAL Handler is not needed in that case Table 4 Status of FAL CMD READ WORD command Status Class Background and Handling FAL ERR INITIALIZATION heavy meaning FDL not initialized or not opened reason wrong handling on user side remedy Initialize and open FDL before using it FAL ERR PROTECTION heavy meaning FDL driver cannot accept the request reason FDL driver is busy with an other word command or block command in case of same block remedy Call FAL Handler as long as request isn t accepted FAL OK normal Caution meaning request was finished regular reason no problems during command execution happens remedy nothing During the execution of a read command the DMAs via the SFR DMCALL DWAITALL and interrupts are disabled for a short period see Section 6 2 4 The reason for this originates from the following situation In case a Data Flash Read access is performed exactly at the same time while any DMA transfer is triggered there is a possibility for an internal bus conflict between CPU bus and Data Flash bus Such kind of bus conflict can cause a wrong data to be read from the Data Flash See also Customer No
12. 1 Run time configuration During runtime the configuration of the FDL can be changed dynamically To be able to do it more than one descriptor constant has to be defined by the user in advance Depends on the application mode different descriptors can be chosen for the FAL_Init function o Mr TET mf T some code r VW oe eee ee eae Was aed load standard descriptor my status FAL Init amp fal descriptor str J Baha eee e S ZS some code ard PR aaah Rhee gue deme SE FAL Close close USER part of the FAL pool 1 Close close EEL part of the FAL pool but only if necessary means ye if EEL used in system ui load alternative descriptor my status FAL Init amp fal descr 2 str fe uasa 43d RR AR REG at Ca some code 7 Note Before changing FAL pool configuration by using of different FAL pool descriptor the user has to close the FAL USER part of the pool in any case In case that the EEL is active in the system the EEL part of the FAL pool has to be closed by using EEL_Close too R01US0005ED0102 ENESAS 18 User Manual Data Flash Access Library 3 2 3 2 1 3 2 2 R01USO0005ED01 02 User Manual Data types This chapter describes all data definitions used by the FDL Library specific simple type definitions This type defines simple numerical type used by the library typedef unsigned char fal u08 typedef
13. 424 NE SAS C T D D 5 Data Flash Access Library Type T01 European Release 16 Bit Single chip Microcontroller 78KOR Fx3 Series Installer RENESAS FDL 78KOR TO1E Vx xxx All information contained in these materials including products and product specifications represents information on the product at the time of publication and is subject to change by Renesas Electronics Corp without notice Please review the latest information published by Renesas Electronics Corp through various means including the Renesas Technology Corp website http Awww renesas com Renesas Electronics R01USO0005ED0102 June 25 2013 www renesas com Notice 1 All information included in this document is current as of the date this document is issued Such information however is subject to change without any prior notice Before purchasing or using any Renesas Electronics products listed herein please confirm the latest product information with a Renesas Electronics sales office Also please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website 2 Renesas Electronics does not assume any liability for infringement of patents copyrights or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document No license expres
14. 7us 339us 171us 105us 70us Write 1 word 2372us 1595us 1210us 1067us 987yus Verify 1 word 684us 342us 173us 105us 82us Erase 1 block 285473us 285194us 24 NE S AS 285020yus 284932yus 284915us 46 Data Flash Access Library 6 2 3 Command Typical command execution times Typical command execution times 2 MHz 4 MHz 8 MHz 16 MHz 24 MHz Read 1 word 191us 96us 48us 24us 16us Blank check 1 word 564us 282us 142us 87us 58ys Write 1 word 1295us 705us 38a3us 250ys 196us Verify 1 word 570us 285yus 144us 87us 68yus Erase 1 block 6 2 4 12695yus 12408us Interrupt and DMA disable period 12262us 12190uUs 12176us The following table shows the interrupt and DMA disable period for each FAL function command Function command Max interrupt disable period cycles Max DMA disable period cycles FAL_Init 27 FAL Open 0 FAL Close 27 Blank check command 1 word 27 Verify command 1 word 27 Read command 1 word 30 Write command 1 word 27 Erase command 1 block 27 R01USO0005ED01 02 User Manual 24 NE S AS 47 Data Flash Access Library 6 3 Cautions Following cautions must be considered before developing of an appl
15. AS 9 Data Flash Access Library R01USO0005ED01 02 User Manual EEL pool EEL pool is a part of the FDL pool and is assigned exclusively to Renesas EEPROM Emulation Library EEL only In case the EEL is not used the whole FDL pool will be reserved for USER pool USER pool The USER pool is a part of the FDL pool It can be used exclusively by the application in a free way In case of proprietary EEPROM emulation implementation user specific the completely FDL pool has to be configured as USER pool 24 NE S AS 10 Data Flash Access Library 2 2 Address virtualization To facilitate the access to the USER pool the physical addresses were virtualized The virtualized pool looks like a simple one dimensional array of flash words 4 bytes Figure 2 2 Relationship between physical and virtual pool addresses OxEC800 OxEC7FF OxECOO00 OxEBFFF OxEB800 OxEB7FF OxEBOO0 OxEAFFF OxEAB800 OxEA7FF Physical address R01USO0005ED01 02 User Manual Data Flash l USER EEL Pool MEM OxO7FF N Block 3 0x0600 Ox05FF Block 2 0x0400 OxO3FF 0x0200 0x01FF Flash block and address transformation Block 0 0x0000 lt gt USER pool gt EEL pool EE p I virtual l i word index 24 NE SAS 11 Data Flash Access Library 2 3 Access right supervision As mentioned before the complete FDL pool is divided into two parts shared between user and the EEL The
16. MD request FAL Handler proceed background process while my fal WCMD request status enu FAL ERR REJECTED command execution do FAL Handler while my fal WCMD request status enu FAL BUSY if my fal WCMD request status enu FAL OK error handler 34 NE S AS 27 Data Flash Access Library 3 3 2 5 FAL Handler Description This function is used by the application to proceed the execution of a command running in the background In case of the FDL the functionality of the Handler is reduce to simple status polling of the sequencer In case any background command was suspended in the past the FAL Handler takes care for the resume process Interface REC version void far FAL Handler void Interface IAR version _ far func void FAL Handler void Pre condition FAL Init executed successfully with status FAL OK FAL Open executed already Post condition In case of finished command the status is written to the request structure Argument Argument Type Description None Return types values Argument Type Description None Usage infinite scheduler loop de 4 proceed potential command execution FAL Handler 20ms time slize potential FAL requester yTask A 20 10ms time slize potential FAL requester yTask B 10 40ms time slize potential FAL requester yTask C 40
17. The user can uses verify freely to check the quality of user data The verify command is initiated by FAL_Execute and must be continued by FAL_Handler as long as command is not finished request status updated Table 3 Status of FAL_CMD_IVERIFY_WORD command Status Class Background and Handling FDL not initialized or meaning not opened wrong handling on user FAL ERR INITIALIZATION heavy reason cide Initialize and open FDL before using it request cannot be accepted word index is outside the corresponding pool set correct word index and try again FDL driver cannot accept the request FDL driver is busy with an other word reason command or block command in case of same block Call FAL_Handler as remedy long as request isn t accepted specified flash word in meaning pool could not be verified any bit in the FAL_ERR_VERIFY normal reason addressed flash word isn t electrically correct nothing free remedy interpretation at requester side request is being processed request checked and accepted nothing call remedy FAL Handler until status changes request was finished regular no problems during reason command execution happens remedy meaning FAL ERR PROTECTION heavy reason remedy meaning FAL ERR REJECTED normal meaning FAL BUSY normal 850n meaning FAL OK normal remedy nothing R01US00
18. ables for same data and so on In other words please consider such reset scenarios to avoid invalid data The EEL provided by Renesas Electronics is designed to avoid read of invalid data cause by such reset scenarios The following chapter describes the applications where the EEL should be used 5 2 20 EEL FDL or FDL only Depending on the security level of the application write frequency of variables and variables count it should be considered whether to uses the EEL FDL or the FDL only 5 2 2 1 FDL only By using the FDL only the application has to take care about all reset scenarios and writing flow of different variables with different sizes Application scenarios Programming of initial or calibration data user specific EEPROM emulation 5 2 2 2 EEL FDL The duo of EEL and FDL allows the user to uses the EEL for high write frequency of different variables with different sizes in a secure way and additionally the USER pool is available for free usage Application scenarios Programming of initial or calibration data Large count of variables and high write frequency by using the EEL Secure data handling completely handled by EEL R01US0005ED0102 RENESAS 36 User Manual Data Flash Access Library 5 3 5 3 1 5 3 2 R01USO0005EDO0102 File structure Library for IAR Compiler root TO info txt root lib fdl h fdl types h fdl r26 root smp C fdl descriptor c fdl descriptor h fd sample
19. construction of the FDL does not allow user access to the EEL pool and vice versa Figure 2 3 FDL pool access supervision FDL pool N 1 USER l USER pool access N flash words MS FDL 0x0000 R01US0005ED0102 ENESAS 12 User Manual Data Flash Access Library 2 4 Request Response architecture The communication between the requester user and the executor here the FDL is a common structured request variable The requester can specify the request and pass it to the FDL After acceptance the progress of the execution can be checked by polling the request status From execution time point of view the commands of the FDL are divided into two groups suspendable block oriented command like block erase taking relatively long time for its execution not suspedable word oriented commands like write read taking very short time for its execution Depending on the real time requirements the user can decide if independent quasi parallel execution of block and word commands is required or not In such a case two separate request variables have to be defined and managed by the application Please refer to chapter Operation for details Following figure shows the access from requester and FDL point of view Figure 2 4 Request oriented communication between FDL and its requester E R01US0005ED0102 ENESAS 13 User Manual Data Flash Access Library 2 5 Background opera
20. correct block number and try again FDL driver cannot accept the request FDL driver is busy with an other word reason command or block command in case of same block Call FAL_Handler as remedy long as request isn t accepted specified flash block could not be erased FAL_ERR_ERASE fatal reason internal flash problems do not use this block anymore request is being processed request checked and accepted nothing call remedy FAL_Handler until status changes request was finished regular no problems during reason command execution happens remedy meaning FAL_ERR_PROTECTION heavy reason remedy meaning FAL_ERR_REJECTED normal meaning remedy meaning FAL BUSY normal TE meaning FAL_OK normal remedy nothing R01US0005ED0102 RENESAS 35 User Manual Data Flash Access Library Chapter 5 FDL usage by user application 5 1 First steps It is very important to have theoretic background about the Data Flash and the FDL in order to successfully implement the library into the user application Therefore it is important to read this user manual in advance especially subchapter Cautions of chapter Characteristics 5 2 Special considerations 5 2 1 Reset consistency During the execution of FDL commands a reset could occur and the data could be damaged In such cases it should be considered whether to uses two vari
21. e operating system where the FDL is used for Data Flash access Figure 5 4 FDL used in an operating system operating system Task 1 each 50ms if reg1 status FAL BUSY FAL Execute req1 Task 2 each 100ms if req2 status FAL BUSY FAL Execute req2 IDLE Task each 2ms FAL Handler Task 3 emergency task do FAL_Execute req_et FAL_Handler while req_et status rejected while req_et status FAL_BUSY FAL_Handler This sample operating system shows three different task types which are described below Task 1 and Task 2 This task type is a requesting task like Task 1 and 2 Such tasks just start any FDL command via the FAL_Execute function and assume that it will be finished in the background via the IDLE task IDLE task The IDLE task will be used by the application for continuing any running FAL command That means the FAL_Handler must be called inside of such a task Emergency task The difference between this task type and the requesting type Task 1 and R01US0005ED0102 ENESAS 42 User Manual Data Flash Access Library Task 2 is that this task performs any FAL commands completely without waiting in the background Such task can be used in case of voltage drop where important data must be saved before the device is off 5 7 Example Simple application The following sample shows how to use each command i
22. enesas In case of devices incorporating data flash the FDL is representing this layer It offers all atomic functionality to access the FDL pool To isolate the data flash access from the used flash media this layer the FDL is transforming thy physical addresses into a virtual linear address room EEPROM access layer The EEPROM layer allows read write access to the Data Flash at abstract level It is represented by Renesas EEL or alternatively any other user specific implementation Application layer The application layer is user s application software that can use freely all visible specified by the API definition commandos of upper layers The EEPROM layer and the flash access layer can be used asynchronously The FDL manages the access rights to it in a proper way 24 NE S AS 7 Data Flash Access Library 1 2 R01USO0005ED01 02 User Manual Naming Conventions Certain terms required for the description of the Data Flash Access and EEPROM emulation library are long and too complicated for good readability of the document Therefore special names and abbreviations will be used in the course of this document to improve the readability These abbreviations shall be explained here Abbreviations Acronyms Description Block Smallest erasable unit of a flash macro Embedded Flash where the application code is stored Code Flash For devices without Data Flash EEPROM emulation might be implemented on tha
23. enu fol Stot us t status enu fal request tr R01US0005ED0102 ENESAS 20 User Manual Data Flash Access Library Struct member Description data_u32 32 bit buffer for data exchange during read write access index_u16 virtual word index within the targeted pool command_enu command code status_enu request status code feedback 3 2 5 Structured type fal_descriptor_t This type defines the structure of the FDL descriptor It contains all characteristics of the FDL It is used in the fdl descriptor c file for definition of the ROM constant fal descriptor str Based on configuration data inside the fdl descriptor h the initialization data of descriptor constant is generated automatically in the fdl descriptor c typedef struc R01USO0005ED01 02 User Manual S 3 fal fa fal fal fal fal fal fal fel fa fal ral fal fal fal tel fal fal fal fal fal fal fal fal fal fal fal FAL descriptor type UHR ES merece 712032 u32 Mae E EE SE EE ee ee EE E ul ul OY OY Ov OY Oy OY OS Oy Oy OY OY OY Oy Os OS 6 6 u08 u08 u08 u08 fal pool first addr u32 eel pool first addr u32 user pool first addr u32 fal pool last addr u32 eel pool last addr u32 user pool last addr u32 fal pool first block ulg eel pool first block ul16 user pool first block ul6 fal pool last block ul eel pool last block u16 us
24. eq status enu FAL ERR REJECTED next state erase stare err block erase is running in background here void erase state 1 void if read during erase needed read immediately if emergency read TRUE do my WCMD req index ul6 234 my WCMD req command enu FAL CMD READ WORD FAL Execute amp my WCMD req FAL Handler enforce eventually blocking command while my WCMD req status enu FAL ERR REJECTED read request accepted gt read the data directly if my WCMD req status enu FAL OK my data u32 my WCMD req data u32 else in case of error goto error state next state erase state err dE EE EHE NEXT PAGE gt dPHETETETETETETE 24 NE S AS 44 Data Flash Access Library R01USO0005ED01 02 User Manual if write during erase needed read immediately if emergency write TRUE i do my data_u32 0x12345678 my WCMD req data u32 my data u32 my WCMD req index ul6 234 my WCMD req command enu FAL CMD WRITE WORD FAL Execute amp my WCMD reg T FAL Handler enforce eventually blocking command while my WCMD req status enu FAL ERR REJECTED enforce execution of the write request do FAL Handler while my WCMD req status enu FAL BUSY if error during write goto error
25. er pool last block ul6 fal first widx ul6 eel first widz ul user first widx ul6 fal last widx ul6 eel last widx ul6 user last widx ul6 fal pool wsize ul6 eel pool wsize ul6 user pool wsize ulg block size ul6 block wsize ul6 fal pool size u08 eel pool size u08 user pool size u08 fx MHz u08 fal descriptor t 24 NE S AS 21 Data Flash Access Library Struct member Description fal_pool_first_addr_u32 first physical address of the FAL pool eel_pool_first_addr_u32 first physical address of the EEL pool user pool first addr u32 first physical address of the USER pool fal pool last addr u32 last physical address of the FAL pool eel pool last addr u32 last physical address of the EEL pool user pool last addr u32 last physical address of the USER pool fal pool first block u16 first virtual block of the FAL pool eel pool first block u16 first virtual block of the EEL pool user pool first block u16 first virtual block of the USER pool fal pool last block u16 last virtual block of the FAL pool eel pool last block u16 last virtual block of the EEL pool user pool last block u16 last virtual block of the USER pool fal first widx u16 first virtual word index inside the FAL pool eel first widx u16 first virtual word i
26. es Both types of access are managed separately on FDL and requester side The suspension and resumption of the running block command erase is managed automatically according to the following rules word commands cannot be suspended each block command can be suspended by any word command User requested block command does always suspend running block commands of the EEL EEL requested block commands cannot suspend running user block command In other words word commands have always higher priority than block commands user access have always higher priority than EEL running in background The following table shows dependencies between running and requested commands of EEL or user Table 1 Block command suspension rules running command command acceptance WCMD BCMD user eel WCMD suspend suspend RK eel rejected rejected resume resume WCMD suspend suspend requested user rejected rejected resume resume command BCMD eel rejected rejected rejected rejected BCMD suspend user rejected rejected resume rejected Agenda WCMD word command BCMD block command rejected requested command is rejected suspend running block command is suspended when the address of the WCMD refers to the block addressed by BCMD the WCMD will be rejected too R01US0005ED0102 ENESAS 17 User Manual Data Flash Access Library Chapter 3 User interface API 3
27. for switching off the Data Flash Argument Argument Type Description None Return types values Argument Type Description None Usage FAL Closet R01US0005ED0102 RENESAS 26 User Manual Data Flash Access Library 3 3 2 4 FAL Execute R01USO0005ED01 02 User Manual Description This is the main function of the FDL the application can use to initiate execution of any command Please refer to the chapter Operation for detailed explanation of each command Interface REC version woud _ far FAL Execute near fal request t request pstr Interface IAR version _ far func void FAL Execute near fal request t near request pstr Pre condition FAL Init executed successfully with status FAL OK FAL Open executed already Post condition None Argument Argument Type Description request pstr fal request t This argument defines the command which should be executed by FDL It is a request variable which is used for bi directional information exchange before and during execution between FDL and the application Return types values Argument Type Description None Usage _ heer fal request t my fal WCMD request str my fal WCMD request data u32 0x12345678 my fal WCMD request index ul6 0x0123 my fal WCMD request command enu FAL CMD WRITE WORD command initiation doe 1 FAL Execute amp my fal WC
28. ication R01USO0005ED01 02 User Manual Library code and constants must be located completely in the same 64k flash page Initialization by FAL Init must be performed before execution FAL Handler FAL Execute functions Do not read data flash directly means without FAL during command execution of FAL Each request variable must be located from an even address All functions are not re entrant That means don t call FAL functions inside the ISRs while any FAL function is already running Task switches context changes and synchronization between FDL functions All FDL functions depend on FDL global available information and are able to modify this In order to avoid synchronization problems it is necessary that at any time only one FDL function is executed So it is not allowed to start an FDL function then switch to another task context and execute another FDL function while the last one has not finished Example of not allowed sequence Task 1 Start an FDL operation with FDL_Execute Interrupt the function execution and switch to task 2 executing FDL_Handler function Return to task 1 and finish FDL_Execute function After execution of FAL_Close or FAL_Init function all requested running commands will be aborted and cannot be resumed Please take care that all running commands are finished before calling this functions It is not possible to modify the Data Flash parallel to modification of the Code Flash Suspensi
29. led by the library Figure 1 1 Components of the EEPROM emulation system R01USO0005ED01 02 User Manual FDL POOL data flash physical data flash FDL flash access layer FAL EEPROM layer EEL EEL API User application application layer To boost the flexibility and the real time characteristics of the library it offers only fast atomic functionality to read write and erase the Data Flash memory at smallest possible granularity Beside the pure access commands some maintenance functionality to check the quality of the flash content is also provided by the library 24 NE S AS 6 Data Flash Access Library 1 1 R01USO0005EDO0102 User Manual Components of the EEPROM Emulation System To achieve a high degree of encapsulation the EEPROM emulation system is divided into several layers with narrow functional interfaces Physical flash layer The FDL is accessing the Data Flash as a physical media for storing data in the EEPROM emulation system The Data Flash is a separate memory that can be accessed independent of the Code Flash memory This allows background access to data stored in the Data Flash during program execution located in the code flash The physical Data Flash is mapped by the FDL into a virtual pool called FDL Pool below Flash access layer The Data Flash access layer is represented by the flash access library provided by R
30. linker file xcl Library for REC Compiler root fdl_info txt root lib fdl h fdl inc fdl_types h fdl lib root smp C fdl_descriptor c fdl descriptor h fd sample linker file dr root smp asm fdl descriptor asm fdl descriptor inc fd sample linker file dr FDL library Library release notes FDL interface definition FDL types definition Pre compiled library Descriptor calculation part Pool configuration part Sample Linker file Library release notes FDL library FDL interface definition Compiler FDL interface definition Assembler FDL types definition Pre compiled library Sample folder for C Compiler projects Descriptor calculation part Pool configuration part Sample Linker file Sample folder for Assembler projects Descriptor calculation part Pool configuration part Sample Linker file 24 NE S AS 37 Data Flash Access Library 5 4 5 4 1 5 4 2 5 4 3 R01USO0005ED01 02 User Manual Configuration Linker sections Following segments are defined by the library and must be configured via the linker description file FAL CODE Segment for library code Can be located anywhere in the code flash FAL CNST Segment for library constants like descriptor Can be located anywhere in the code flash FAL DATA Segment for library data Must be located inside the SADDR RAM NOTE FAL CODE and FAL CNST segments must be located anywhere in the Code Flash but
31. n 42 5 7 Example Simple application 43 5 8 Example Read Write during background erase sse 44 Chapter 6 Characteristics ssessssssssssssessseeeeeeeee enne enne nn tenens tris en tete enne s inris intret tenen 46 6 1 Hesource consutmbptLlOn serrera an rures estatura ten ceeded uen ape RAES reet uu ET 46 I FTT E 46 6 2 1 Maximum function execution times sseesseeeneeenn enne 46 6 2 2 Maximum command execution mes enne 46 6 2 3 Typical command execution MeS nennen nnne 47 6 2 4 Interrupt and DMA disable Dertod AA 47 MEE pn c TEE 48 R01US0005ED0102 RENESAS 5 User Manual Data Flash Access Library Chapter 1 Introduction This user s manual describes the overall structure functionality and software interfaces API of the Data Flash Library FDL accessing the physical Data Flash separated and independent from the Code Flash This library supports dual operation mode where the content of the Data Flash is accessible read write erase during instruction code execution The FAL flash access layer is a layer of EEPROM emulation system and encapsulates the low level access to the physically flash in secure way In case of Data Flash this layer is using the FDL It provides a functional socket for Renesas EEPROM emulation software but beside this it offers also direct access to the user at witch the access priority and access separation is fully control
32. n a simple way extern far const fal descriptor t fal descriptor str fal Status t my fal status enu _ Near fal request t request initialization my fal status enu FAL Init far fal descriptor C amp fal descriptor str ij if my fal status enu FAL OK ErrorHandler FAL Open erase block 0 request index ul6 0x0000 request command enu FAL CMD ERASE BLOCK FAL Execute amp request while request status enu FAL BUSY FAL Handler ifirequest status enu T FAL OK ErrorHandler write patter 0x12345678 into the widx 0 request index ulg 0x0000 request data u32 0x12345678 request command enu FAL CMD WRITE WORD FAL Execute amp request while request status enu FAL BUSY FAL Handler ifirequest status enu t FAL OK ErrorHandler read value of widx 0 request index ulg 0x0000 request command enu FAL CMD READ WORD FAL Execute amp request if request status enu l FAL OK ErrorHandler check whether the written pattern is correct if requ st data u32 l 0x12345678 ErrorHandler blank check widx 0 request index ul6 0x0000 request command enu FAL CMD BLANKCHECK WORD FAL Execute amp request while request status enu FAL BUSY FAL Handler if request status enu FAL ERR BLANKCHECK ErrorHandler verify widx 0 request index ulg 0x0000 request command enu FAL CMD IVERIFY WORD FAL Execute amp request while request status en
33. ndex inside the EEL pool user first widx u16 first virtual word index inside the USER pool fal last widx u16 last virtual word index inside the FAL pool eel last widx u16 last virtual word index inside the EEL pool user last widx u16 last virtual word index inside the USER pool fal pool wsize u16 size of the FAL pool expressed in words eel pool wsize u16 size of the EEL pool expressed in words user pool wsize u16 size of the USER pool expressed in words block size u16 size of one Data Flash block expressed in bytes block wsize u16 size of one Data Flash block expressed in words fal pool size u08 size of the FAL pool expressed in blocks Note 1 eel pool size u08 size of the EEL pool expressed in blocks Note 2 3 user pool size u08 size of the USER pool expressed in blocks Note 2 3 fx MHz u08 not relevant for the FDL Note 1 the maximal number of fal pool size u08 is 0x08 fixed to 78KOR Fx3 8x2KByte blocks Note 2 the sum of eel pool size u08 and user pool size u08 must not exceed fal pool size u08 Note 3 both descriptor configuration conditions will be checked by FAL Init R01USO0005ED01 02 User Manual 24 NE S AS 22 Data Flash Access Library 3 3 Functions Due to the request oriented interface of the FDL the functional interface is very narrow Beside the initialization function and some administrative
34. on of word commands like read write verify and blank check is not possible During the execution of any FAL function the interrupts may be disabled for a short period of time see also Section 6 2 4 During the execution of the read command the DMA operation will be disabled for short period see also Section 6 2 4 24 NE S AS 48 Data Flash Access Library R01USO0005ED01 02 User Manual Revision history This is a first release of the user s manual Chapter Page Description Rev 1 01 all Initial document Rev 1 02 4 3 32 Caution added 6 1 46 Resource consumption updated 6 2 46 47 Timing measurements updated 6 3 48 Cautions regarding interrupt and DMA disable times added 24 NE S AS 49 Data Flash Access Library Data Flash Access Library R01US0005ED0102 ENESAS 50 User Manual
35. ory nonvolatile memory The content of that memory can not be changed Serial programming The onboard programming mode is used to program the device with an external programmer tool Single Voltage For the reprogramming of single voltage flashes the voltage needed for erasing and programming are generated onboard of the microcontroller No external voltage needed like for dual voltage flash types 24 NE S AS 8 Data Flash Access Library Chapter 2 Architecture 2 1 This chapter describes the overall architecture of the FDL library Data Flash fragmentation The physical Data Flash location is fixed to a physical address assigned by the hardware e g for 78KOR Fx3 0xE9800 OxED7FF Just the logical fragmentation of the Data Flash can be configured within the given range Following figure shows the logical fragmentation of physical Data Flash Figure 2 1 Logical fragmentation of physical Data Flash R01USO0005ED01 02 User Manual OxED7FF USER pool Access by application only EEL pool OxE9800 Access by EEL only FDL pool The FDL pool defines the maximum usage of physical Data Flash used by the FDL In case of physical Data Flash size of 16KByte it is possible to define the following sizes for FDL pool configuration 2KByte 4KByte 6KByte 8KByte 10KByte 12KByte 14KByte 16KByte This pool is divided into the EEL and USER pool which are described below 24 NE S
36. ound and Handling FDL not initialized or meaning not opened wrong handling on user FAL ERR INITIALIZATION heavy reason Side Initialize and open FDL before using it request cannot be accepted word index is outside the corresponding pool set correct word index and try again FDL driver cannot accept the request FDL driver is busy with an other word reason command or block command in case of same block Call FAL Handler as remedy long as request isn t accepted specified flash word is not blank any bit in the flash reason word addressed by word index isn t erased nothing free remedy interpretation at requester side request is being processed request checked and accepted nothing call remedy FAL Handler until status changes request was finished regular no problems during reason command execution happens remedy meaning FAL ERR PROTECTION heavy reason remedy meaning FAL ERR REJECTED normal meaning FAL ERR BLANKCHECK normal meaning FAL BUSY normal 850n meaning FAL OK normal remedy nothing R01US0005ED0102 ENESAS 30 User Manual Data Flash Access Library 4 2 Internal verify The internal verify operation can be used to check if all bits 0 s and 1 s are electronically correct written Inconsistent and weak data caused by asynchronous RESET can be detected by using the verify command
37. s implied or otherwise is granted hereby under any patents copyrights or other intellectual property rights of Renesas Electronics or others 3 You should not alter modify copy or otherwise misappropriate any Renesas Electronics product whether in whole or in part 4 Descriptions of circuits software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples You are fully responsible for the incorporation of these circuits software and information in the design of your equipment Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits software or information 5 When exporting the products or technology described in this document you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military including but not limited to the development of weapons of mass destruction Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture use or sale is prohibited under any applicable domestic or foreign laws or regulations 6 Renesas Electronics has used reasonable care in preparing
38. s always the remaining none EEL pool in other words USER POOL SIZE FAL POOL SIZE EEL POOL SIZE The virtual address 0 of the user pool corresponds with the successor of the last EEL pool word Request structure Depending on the user application architecture more than one request variable could be necessary For example if an immediate write is necessary during running erase In such a case two request variables one for write and one for 24 NE S AS 38 Data Flash Access Library erase are necessary Please take care that each request variable is located on an even address 5 5 General flow 5 5 1 General flow Initialization The following figure illustrates the initialization flow Figure 5 1 Initialization flow FAL Init FAL ERR CONFIGURATION status FAL OK FAL Open Execute any FAL commands Y FAL Close Error handler R01US0005ED0102 ENESAS 39 User Manual Data Flash Access Library 5 5 2 General flow commands except read After initialization of the environment the application can uses the commands provided by the library The following figure illustrates the general flow of command except read command execution Figure 5 2 FAL command execution except read command Y fill request CMD Y FAL Execute CMD FAL Handler A FAL_ERR_REJECTED s
39. state if my WCMD req status enu FAL OK next state erase state err proceed the BCMD execution FAL Handler erase request finished gt goto state 2 if my BCMD req status enu FAL OK next state erase state 2 else in case of error goto error state next state erase state err 24 NE S AS 45 Data Flash Access Library Chapter 6 Characteristics 6 1 6 2 6 2 1 6 2 2 R01USO0005EDO0102 User Manual Resource consumption Resource consumption REC Compiler IAR Compiler Max code size code flash 1715 bytes 1749 bytes Constants code f lash 62 bytes 62 bytes Internal data SADDR RAM 2 bytes 2 bytes Max stack RAM All values are based on FDL version V1 10 Timings 40 bytes 40 bytes The following timings have been measured on the uPD78F1845 device and FDL version V1 10 Maximum function execution times Function Maximum function execution time FAL Init 1476 fclk 14us FAL Open 28 fclk 89us FAL Close 270 fclk 13us FAL Execute 1172 fclk 14us FAL Handler 864 fclk 3us FAL_GetVersionString Maximum command execution times Maximum command execution time 14 fclk Command 2 MHz 4 MHz 8 MHz 16 MHz 24 MHz Read 1 word 230yus 116us 58ys 29us 20us Blank check 1 word 67
40. t flash in the so called data area Embedded Flash where mainly the data of the EEPROM Data Flash emulation are stored Beside that also code operation might be possible Dual Operation Dual operation is the capability to fetch code during reprogramming of the flash memory Current limitation is that dual operation is only available between different flash macros Within the same flash macro it is not possible EEL EEPROM Emulation Library In distinction to a real EEPROM the EEPROM emulation EEPROM uses some portion of the flash memory to emulate the emulation EEPROM behavior To gain a similar behavior some side parameters have to be taken in account FAL Flash Access Library Flash access layer FCL Code Flash Library Code Flash access layer FDL Data Flash Library Data Flash access layer Flash EPROM Electrically erasable and Flash programmable nonvolatile memory The difference to ROM is that this type of memory can be re programmed several times A flash block is the smallest erasable unit of the flash Flash Block memory A flash comprises of the cell array the sense amplifier Flash Macro and the charge pump CP For address decoding and access some additional logic is needed Non volatile memory All memories that hold the value NVM even when the power is cut off E g Flash memory EEPROM MRAM RAM Random access memory volatile memory with random access ROM Read only mem
41. tatus FAL_BUSY FAL Handler FAL_BUSY E status Y Error handler In case the requested command is rejected the application has to call the FAL Handler for finishing suspend the background command and try to execute the command again R01US0005ED0102 RENESAS 40 User Manual Data Flash Access Library 5 5 3 General flow read command The difference between the read command and other commands erase write verify blank check is that the read command will be completed directly during FAL_Execute function That means no additionally FAL Handler calls are required y fill request CMD read Y si FAL Execute CMD Figure 5 3 FAL read command execution FAL Handler l FAL_ERR_REJECTED status es Error handler In case the requested command is rejected the application has to call the FAL Handler for finishing suspend the background command and try to execute the command again R01US0005ED0102 RENESAS 41 User Manual Data Flash Access Library 5 6 Example of FDL used in operating systems The possibility of background operation and request response structure of the FDL allows the user to uses the FDL in an efficient way in operating systems Note Please read the chapter Characteristics gt Cautions carefully before using the FDL in such operating systems The following figure illustrates a sampl
42. the information included in this document but Renesas Electronics does not warrant that such information is error free Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein 7 Renesas Electronics products are classified according to the following three quality grades Standard High Quality and Specific The recommended applications for each Renesas Electronics product depends on the product s quality grade as indicated below You must check the quality grade of each Renesas Electronics product before using it in a particular application You may not use any Renesas Electronics product for any application categorized as Specific without the prior written consent of Renesas Electronics Further you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as Specific or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics The quality grade of each Renesas Electronics product is Standard unless otherwise expressly specified in a Renesas Electronics data sheets or data books
43. tification RO1TU0003ED0103 R01US0005ED0102 ENESAS User Manual 32 Data Flash Access Library 4 4 Write The write operation writes 32 bit data into passed word index To protect existing flash data against accidental overwrite 1 word blank check is executed in advance After that the write command is initiated In case of successfully finished writing the quality of data will be checked via internal verify Table 5 Status of FAL CMD WRITE WORD command Status Class Background and Handling FDL not initialized or meaning not opened wrong handling on user FAL ERR INITIALIZATION heavy reason Side Initialize and open FDL before using it request cannot be accepted word index is outside the corresponding pool set correct word index and try again FDL driver cannot accept the request FDL driver is busy with an other word reason command or block command in case of same block Call FAL Handler as remedy long as request isn t accepted specified flash word in pool is not blank write meaning was not performed the content of flash word remains untouched FAL ERR BLANKCHECK normal overwriting of non reason erased flash words is not allowed erase the block before remedy writing again into this block flash word addressed by word index couldn t meaning be written correctly after performing the FAL ERR WRITE normal max number of retries reason flash problems erase the block and try remedy
44. tion Due to the fact that the Data Flash operates in the background it is possible to do something else in the meantime For example the application could prepare next data for writing into the Data Flash or handle different ISRs Background operation is a powerful feature especially in operation systems were each task could start FAL commands which will be executed in the background during task switching 2 5 4 Background operation Erase The erase command is from timing point of view the longest command As shown in the figure below the application has the possibility to execute other user code during the background operation Figure 2 5 Background operation Erase Data Flash USER FDL hardware background FAL_Execute ERASE P FAL BUSY FAL Handler E FAL BUSY FAL Handler J Erase FAL_BUSY d FAL Handler M FAL_BUSY E FAL Handler 8 FAL_OK R01US0005ED0102 RENESAS 14 User Manual Data Flash Access Library 2 5 2 Background operation write During the running write command blank check write verify will be performed in background As shown in the figure below the application has the possibility to execute other user code during the background operation Figure 2 6 Background operation write R01USO0005ED01 02 User Manual
45. u FAL BUSY FAL Handler if request status enu FAL OK ErrorHandler FAL Close R01US0005ED0102 RENESAS 43 User Manual Data Flash Access Library 5 8 R01USO0005ED01 02 User Manual Example Read Write during background erase The FDL allows background erase operation therefore during that time read and write access to data located in another block of the addressed pool is possible To be able to use foreground read write operation a separate request variable has to be declared for that purpose Read and write commands do always suspend the erase process running in the background Exception is when the word command tries to access the same block as the running erase in background In such a case the FAL Handler has to be called until the running erase command is finished Please refer to the detailed explanation of command suspension to chapter Suspension of block oriented commands erase fal request_t my BCMD req my WCMD req fal u32 my data u32 void erase state O void specify the BCMD parameter my BCMD req index ulg 4 my BCMD req command enu FAL CMD ERASE BLOCK FAL Execute amp my BCMD req if erase request accepted goto next state 1 if erase request rejected remain in state 0 if erase request error occurs goto error state ifimy BCMD req status enu FAL BUSY next state erase state 1 else if my BCMD r
46. unsigned int fal ul6 typedef unsigned long int fal u32 Enumeration type fal command t This type defines all codes of available commands typedef enum FAL CMD UNDEFINED 0x00 FAL CMD BLANKCHECK WORD 0x00 0x01 FAL CMD IVERIFY WORD 0x00 0x02 FAL CMD READ WORD 0x00 0x03 FAL CMD WRITE WORD 0x00 0x04 FAL CMD ERASE BLOCK 0x00 0x05 fal command t Code value description FAL CMD UNDEFINED default value FAL CMD BLANKCHECK WORD blank check of 1 Data Flash word FAL CMD IVERIFY WORD verify of 1 Data Flash word FAL CMD READ WORD read 1 Data Flash word FAL CMD WRITE WORD write 1 Data Flash word FAL CMD ERASE BLOCK erases 1 Data Flash block 24 NE S AS 19 Data Flash Access Library 3 2 3 Enumeration type fal status t This enumeration type defines all possible status and error codes can be generated during data flash access via the FDL The FAL OK and FAL BUSY status are returned to the requester during normal operation Other codes signalize problems typedef enum operation related status FAL OK 0x00 FAL BUSY 0x00 0x01 run tim rror related status wed FAL ERR PROTECTION 0x10 0x00 FAL ERR BLANKCHECK 0x10 0x01 FAL ERR VERIFY 0x10 0x02 FAL ERR WRITE 0x10 0x03 FAL ERR
47. you have any questions regarding the information contained in this document or Renesas Electronics products or if you have any other inquiries Note 1 Renesas Electronics as used in this document means Renesas Electronics Corporation and also includes its majority owned subsidiaries Note 2 Renesas Electronics product s means any product developed or manufactured by or for Renesas Electronics R01US0005ED0102 ENESAS 3 User Manual Chapter 1 Introduction ener nnne nns 1 4 Components of the EEPROM Emulation System eeeseeeeeeeeeeeeeeeeeeesnen 1 1 1 Physical flash layer Cette 1 1 2 Flash access layer eee tentent Sere tte reli 1 4 8 EEPROM access laverie 1 1 4 Application layet REENEN 1 2 Naming Conmventons ener enne Chapter 2 Archit CtUre sects eoe bre eite eege ee 2 1 Data Flash fragmentation enne 2 1 1 FIDL ele 2 1 2 EEL DOOM E T E A E E T E vacancy 24 9 USERPOON Tienaa ai aaa e e tete oes a a Locate ne 2 2 Address virtualization 2 8 Access right supervision 2 4 Request Response architecture 2 5 Background operation 2 5 1 2 5 2 2 5 8 2 5 4 2 6 Suspension of block oriented commands erase Chapter 3 User interface API ssssssssssssseseseeeeneee eene nenne 3 1 Run time configuration 3 2 Datatypes 3 2 1 3 2 2 3 2 3 3 2 4 3 2 5 3 3 Functions 3 8 1 3 3 2 Chapter 4 4 1 Blank check 4 2 internal verify 43 LCD 4 44 NN EE GG CE E R01US0005ED
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