GDIC-apj1 (PDF形式、426kバイト)
Contents
1. 4 9 5 6 VS VS GND Vc c GND V cc Vs PAJ 30531 541 0 IC SP 06005 RO2. 4 14 1 C
3. C b PWM 4 4 Cb ECNSO059831 S30541 7 2 3 U V W 2 4 F Faul tt N MOS R f Vcc CB 5V 8 Rf 5 ek 20 Fault pF F GL 1 9 CB
4. P5 2 5 V CCO ii P6 2 6 OC P 2 7 CB P 2 8 PGU PGV PGW NGU NGV N GW ii P 2 9 A A O ECN3053 1 ei P 3 3 1 P9 3 2 ei P9 4 4 1 CD P10 4 2 RI Do P10 4 3 Db P10 4 4 C b P10 4 5 lt
5. PAJ 30531 541 0 IC SP 06005 RO HITACHI U V W ECNSO059831 S30541 Vs Ds Cge 16 4 12 NO NC 1I C 600V I C pF NC 4 13 ECN30531 17 19 21 22 24 26 ECN30541 16 18 20 22 24 26 IC
6. 2 3 4 5 6
7. V3 x x7 xcos x 7 V 7 cos 0 8 7 0 8 2 2 1 SUT SVT SWT SUB SVB SWB T 3 B 3 6 SUB SVB SWMB U V W SUT SVT SWT U V W 1 1 6 5VCMOS IGBT N MOS 6
8. 1 C 1 C 1 C 2 PAJ 30531 541 0 IC SP 06005 RO V c c
9. SOA 2 3 1
10. 7 PAJ 30531 41 0 IC SP 06005 RO Rev 0 20060208 lt tt Me PAJ 3053141 0 H ITACH IC SP 06005 RO lt gt 1 ii P1 2 2 1 SUT SVT SWT SUB SVB SWB ee P1 2 2 VCU VCV VCW P3 2 3 U V WW P5
11. R s 1 6 L s di d t R s IC GL2 GL 1 NGU NGV NGW MOS IGBT Va 1 C GL 1 GL2 NGU NGV NGW 5V R s D s
12. GND I C 4 U V W 0 a b VC Vs 2 a pe b 4 2 2 VCU VCV VCW VCU U VC V VCW W 10 5 V typ Fault IGBT
13. C b 1 1 V C b Cb 7 Rb Cb T Rb Cb 3 T Rb Cb 3 4 8 I C CMOS 1 C
14. Fault H PAJ 30531 541 0 IC SP 06005 RO HITACHI 2 6 OC OC OC Voc 0 49V TYP Fault L Faul tt L Faul tt H 6 H 3 Ox s V cc Loc Ioc Voc Rs A Rs OO OC 0 4 s 10
15. Vfu Vfv V fw 3 b N SWT SWB SVT SVB SUT SUB F Input b 6 C b IGBT V s C b V c c Cb W V EE I err SWB SVT SVB SUT SUB F Input a 6 5 6 ECN3053 1 PAJ 30531 541 0 IC SP 06005 RO HITACHI 7 Cb
16. VB I BB 15mA VB VCC VCC VB VB VB PAJ 30531 541 0 IC SP 06005 RO HITACHI 2 8 PGU PGV PGW NGU NGV NGW PGU PGV P GW NGU NGV NGW 1 C I C I C PGU W NGU W CC MOS 0 25A TYP 0 50A TYP
17. 4 4 Cb tonmax Cb GL 2 1V Db Vf 1V VCC 15V Cb 1 5V I GBT MOS 15V Q 1 30 A 1 C I s 2 Cb 1 5V
18. P14 4 13 P14 4 1 4 P14 1V PAJ 30531 541 0 IC SP 06005 RO HITACHI ECN30531 30541 1 ECN30531 3054 1 ECN3053 3054 MOS Metal Oxide Semiconductor Field Effect Transistor IGBT Insulated Gate Bipolar Transistor 1 C AC200 2 3 0 V DC ECN30531 ECN3054 1 3053 1 30541 1 3 IGBT MOS AC200 240V 1 0 oy DC 7 1 30A IGBT MOS 2 2 kW
19. 2 1 H L IGBT IGBT 2 IGBT VTH 5 V IGBT Vc c IGBT Vs V s PAJ 30531 541 0 HITACHI IC SP 06005 RO a 5
20. 4 5 1 C IGBT MOSFET L w C g 1 C I C U PGU U 2 0V U NGU GL1 20V I C 1 3 1 C 1 C CP 560pF 3 0 cm Rg100 20A IGBT CP 560pF 30541 3 0 cm ECN30531 13 CP U PAJ 30531 541 0 IC SP 06005 RO HITACHI 4 6
21. 2 Cb C Rb 3 2 I C 4 1 Cb 4 3 Db D b 6 0 0 V trr 10 O n s t rr D b Irr Vcc
22. Vcc U V W V c c 2 9 A AO ECN3053 1 ECN3054 1 1 1 A CB AO 0 V A CB AO A AO GL 2 PGU We 6 WT U 0 U EE 2 1 GL2 R1 R2 R1 R2 1 0 kQ C2 C2
23. f 1 2 CC2 R2 11 PAJ 30531 541 0 IC SP 06005 RO HITACHI 3 3 1 1 C 1 Ii C MOS IGBT 2 Ii C 3 I C Vcc 1 5 V Vs 280V IGBT C 1000pF 15A PWM 1 2 3 2 1 2 PWM f 1 6kHz PD 0 17W SOP2 8 120x21x 1 6mm 3 09 I C R ja 8 4 C W 8 T ST 0 17x84 14 3 C 0 40 Vcc 15V Vs 280V 0 30 IGBT lt C 1 0
24. 1 2 V t onmnax 15 Cb Q1 30 A tonmax 12 Cb PAJ 30531 541 0 IC SP 06005 RO HITACHI Cb tonnax IGBT MOS Q 1 Cb 7 Q 1 7 uF uC tonmax ms 0 036 99 500V 10A MOS 2SK1516 Cb 3 3wF Db DFG1C6 DFM1F6 600V 1A Trr 100ns Cb 3 3 F 209 6 15V Rb 3 3 20 2W C 4 5
25. 1 C V c c TYP 200k ECN3053 1 6 2 2 RH PAJ 30531 541 0 IC SP 06005 RO HITACHI 5 V CDD 1 5 V 7 i VIN i VB 6 2 8 2V RH 3 9 k 2 2 L RH I s 1mA RH 3 R1 R2 R2 22k R1 10k I s 0 68mA Vcc 15V RIN TYP200 k ECN30531 1 15V 3 6
26. 6 dv dt 6 1 C I C 1 4 6 I C Rf 10k SUT SUB Cf ECN30531 100 560 pF MR 14 4 7
27. R1 C1 R1 C1 VB 1 a 1 R1 10C typ 300Q 9 S typ 80k typ LL Rs 1 5rf 2 Re Vref 2 hy I C 10 OC 2 7 CB VB VB Fau lt 7 5V typ Vcc CB Co 0 22 F 20 CB F Co I C VB 1I C VB
28. P11 4 6 P12 4 7 i P12 4 8 P12 4 9 P12 4 10 VCC GL 1 w P13 4 1 1 Rs P13 4 12 NC tt
29. 5 6 1 GL 1 GH 4 10 VCC GL 1 V CC VCC mA VCC 1 C V CC VCC 1I C VCO pF Cb 1 0 VCGC Vcc ECNS305831 S0541 15 Vcc 4 11 Rs
30. F 5mA ty p 1kQ Rf c Faul tt H 2 5 VCC 2 6 OC PAJ 30531 541 0 IC SP 06005 RO Vec CB 5V OM ECN30541 8 Fault ECNS059831 S0541 9 Fault 2 5 VCC IGBT C MOS VB V CC 1 s 1 CB V CC 10 5V t yp Faul t L V c c
31. 00pF 0 25 15A IGBT L 016kHz 0 05 0 00 10 100 PWM fpwm kHz 1 2 PWM PAJ 30531 541 0 IC SP 06005 RO HITACHI 4 4 1 Cb IGBT MOS A MN Cb 1 C 4 2 Rb Cb Rb Rb 1 D b Rb
32. PAJ 3053141 0 IC SP 06005 RO nm EE a EE i i ma p jl I Pe i a Me _ IGBT MOS FET IC eg IC ee ee ee PW 3 a a M I EE a a ECN30531F ECN30541F Fn Fe Ll iu HH a a Pi a Pa Ls ji HH ee al i PAJ 30531 41 0 ITACH IC SP 06005 RO N 1
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