平成25年度 修 士 論 文
Contents
1. Fig 2 13 Qr LA X h 9 5 tan 8 2tan 2 28 24 Fig 2 12 25 272. v 4 M4 ETERGED nt vn gt 0 v 4 vs
3. w 2 aNu n oC np I 2 1 2 e n LREND IITU hO kT NMA niXHET pi UT b FE free exciton FE 12 c BE bound exciton B
4. 1 r r 2 3 2 3
5. Fig 23 2 2 2 Fig 2 4 a b c d Fig 24 a D GaAs InP GaN CT CIB CES Si Ge
6. 2 1 3 a 1 3 Fig 2 3 Fig 2 3 a c d h
7. I RO ln x Tae THE I x exp ax 2 6 a em WI Sto
8. X X Moseley X RO ae X TL vipata p n
9. bd 4 X mm CD 2 o e D Fig 2 18 EPMA 31 50eV IK 2 a b SE c MEME d
10. JC T KANE FOUR BA Fig 2 10 19 2 5 2 5 1 E E absorption coefficient a SV Ith reflectivity X
11. op Ra a s EH logf Ra loga I R a f Rd 2 26 2 70 s 2 26 MgO BasSO4 Fig 5 4 107 Bulk Si SINW 100 amp 80 3 60 e o 40 E 20 0 Em c oup N 500 1000 1500 2000 Wavelength nm Fig 5 5 Table 5 1 Ag catalyst SINW my Fy TPR AgNO3 HF 20 AgNO 0 03 mol L Table 5 1 1 W as K B S Swain B P Swain and N M Hwang M
12. Si PL 505557606 6 Si Si Si NHLHP gt HO Pd Au Ag PL Hig 4 13 97 45 Tilted view Cross sectional view Fig 4 17 98 Wavelenght nm uud 1600 1400 1200 1000 NH 4HF H 0 HF H 20 Transmittance 00 5 gt S j L M JE 107 06 0 7 08 09 1 1 1 12 13 Photon energy eV Fig 4 18 Pd catalyst Si NH HF H gt 0 HF H O PL intensity arb units 500 600 700 800 900 Wavelength nm Fig 4 19 99 4411 ec x N Qe 10 m Em O 12 13 14 15 16 17
13. Ae 90 Intensity arb units 505 510 515 520 525 5 Raman shift cm 5 Fig 4 14 91 530 535 PdCb PdCb Pd PdCl HE HF 5 PdClh M 0 001 0 04 mol L 207 10 min NHLHF H02 12 5 3 g 50ml 30 min 30 C Fig 4 15a PdCb Fig 4 15b PdCb PdCb M M 0 006 mol L
14. 2 2 4 X ON 5 X 6 RE 7 Fig 2 1 SEM Fig 2 2 SEM 2
15. R 1 2 7 Maxwell 20 Maxwell rotH J OD Ot 2 8 rotH J 0OD Ot 2 9 divB 0 2 10 divD p 2 11 E D H B pe J J oE 2 12 o 2 8 2 11 E k OE V E
16. Pd Table 4 3 Ag catalyst SINW AgNOs HF 2096 AgNO 0 03 mol L Table 4 1 Au catalyst SINW Ey FY TRY HF 10 H202 30 50 ml 2ml Table 4 2 78 Pd catalyst Si RE 9 LE PdCL HF 5 0 003 mol L 10 min Table 4 3 b Au 79 Fig 4 6 444 SEM Fig 4 7 a bulk Si b Ag Si o Au Si TAV APA Si SEM SEM gt Si CHS F Si b c
17. Si 1 12 eV Si Si Si 2 XS FET1 Si ER Si
18. GET RIVE Fig 2 15 2 hv a Bo CL O hu vg hv b LE 4 V I I V Ei hiv ES VR Fig 2 16 a b j KO Eo Ei lt E OO 2 UTE dg ME hw h i ve E 63 hv E E 2 32 2 32 AO E amp
19. 29 Fig 2 16 15 15 E Boltzmann la E27 _ AVR 2 33 I kT CA KT Boltzmann 7 ARRAI EROT 0 gs 7s N 2 8 2 Fig 2 17 PL Ar 488 nm GLG3110 Filter 1
20. X misg 2 25 Fig 225 37 2 12 oo go EMT EO TEMMEDI RT 1992 1989 PY M CE Roe fit BA BR LH R CA X 2009 1998 1988 K 1987 MK A TE X 1979 PIE Au 38 Si 3 1 Au
21. 3638 CVD Si 9 Si Si a Si 0 3 20 Lorentzian 4 4 2769 9 T ro Q t y 2 Oro og Fig 4 14 4 4 ero 519 4 cm 4 5 cm g 60 6 1 0 tir A ATQ Hus 0100057 4 2 4 5 cm 7 60 CaO Si
22. PSi TWH BY ESR CVD Si Si 46 Si dii Si a Si 3 a Si 480 em Si a Si 7 3 5 63 Lorentzian 3 6 Is Ilo f il expa 3 6 ro 0 7 2 Oro gw Fig 3 17 b 3 5 SX Hero 519 4 cm 3 2 cm 3 6 Re AV oro 519 4 cm
23. 7 0 7 K Db exp 7 2 30 6 r 4 c MEER PE PN 2 31 JD mh srv i1180E AH SL WEE tm le U vm le 2 7 2 Fig 2 14 continuum Nd YAG 266 nm 3S3S nm U330
24. mig 4 17 NH4HP gt H202 HF H O Pd Si SEM Pd Si HF 596 PdCl M 0 003 mol L amp i 10 a NHHHE H20 12 5 3 g 50 ml 30 30 Z b HF 10 H202 30 50 ml 2 ml 30 30 Bii X O EA Fig 4 4 4 600 NHL4HPy H2O gt PdCl H202 Fig 4 17 747 lt 0 003 ml W lt 12 5 HF Pd lt 10 um HFH l Fig 4 17b PSi
25. Au Si BA 1 2 AgNO3 HF AgoSO4 HF Ag Si LPL Au Si Ag Au Pd Au Pd Si Os 3 Si Au HE HzO gt Si 4 Si PdCl HF Pd Si 1 3
26. 2 0 7 ev 1 3 eV 15 9 o gt e o gt Fig 2 5 2 2 4 PL PL Fig 2 4 CCD detector PC 34U filter Mi He Cd laser nd Mirror 37L Filter Spectro CCD mge meH HM scope sample Collective Lens Fig 2 6 PL 16 23 PLE Photoluminescence Excitation 2 3 1 RAST
27. PL Fig 3 13 b PL Ey HO HO gt Ep Hs0 Ip arb units Au nm Fig 3 13 59 PL PL TYTY ZUR HF 30 H202 50 50ml 2 ml Au OJE X 10 nm 10 60 min 30 C Fig 3 14 a Si 20 PL tik EK Fig 3 4 1 10 min t 60 min PL Fig 3 14b Ip arb units 2 2 gt L 41 8 1 time min Fig 3 14 60 3 4 6
28. HOE 38 Fig 2 7 2 8 PLE Fig 2 9 Xe 2 3 2 A S Ll CE E Wu nm xe Xe O2 A J 93 LI e vA Lo avum Go 77 W Bi M6 E s J seven pm EM 70 2 Fig 2 7 PLE 1 F 4500 17 Edd Y 7 3cm 15cm Fig 2 8 PLE 2 H ASE ue Fig 2 9 PLE Xe
29. e aN y S ho E E E 2 4 A Os 14 2 2 3 Ge Van Roosebrock Shockley 1 ms us Ge 1000 UC Og
30. Fig 3 11 b lk HOCK Aem 600 nm PLBE CPs 56 Ey FY TR HF 1096 H20 30 50 ml 2ml Au EE 7 12 nm 20 min 30 C Table 3 2 PL arb units PL arb units PLE arb units 0 1 2 3 4 5 6 Photon energy eV Fig 3 11 57 PL HO PL HO Dy Fu Z HF 3096 H0 50 50ml M M 1 12 Au OJE X 10 nm 30 min 30 C Fig 3 12 a HzO Si PL PHO gt EL 2ml HzO Si PL Fig 3 2 3 124 0 PLI 38
31. 3 i Pd Counts arb units Wavelength Fig 4 1 Counts arb units J Wavelength A Fig 4 2 XRD intensity arb units 73 4 4 2 SEM PdCL Pd PdCb Pd PdCh HF HF 596 PdCl M 0 001 0 04 mol L 207 10 min NH4HE 12 5 3 g 50ml 30 min 30 C Fig 4 4 PdCb 0 001 0 04 mol L Si 2 Pd 2 PdCb JR Pd Fig 44 PdCb JE FEDS 0 001 0 04 mol L Si PdCb ED 0mol L
32. Fig 3 12 b PL Ej HO H2O Ss PL 0 4 eV Hig 3 12 b Si PL PSi 31 36 O Ix arb units 3 6 9 12 15 H5O ml 58 Fig 3 12 PL Au PL Au TyF ZR HF 30 2 50 50ml 2 ml Au OJE X 1 30 nm 30 min 30 C Fig 3 13 a Au Si PL Au PL 10 nm Au Fig 3 3 3 13 Au Si
33. PL Z US IRR IE IEI EVE Fig 4 13 Au PL 0 4 eV 600 nm PSi Au Si PSi quantum confinement QC PSi 200 nm Ag Au Si Ref 4 X QC SSi Au Si Pd
34. R375 SR 445 A F SR 4300 26 1150 1 30 MEN Fig 2 14 FIM E ESSO 27 28 Raman 2 8 1 Raman spectrum
35. Si Si 5 Si M Si M ze M 1 1 Si 6HF 4h S SiF 6H 2 2 mde NE EELER 14 l XC EC uem xm 10 11 12 13 14 T5 16 17 15 19 20 21 22 29 24 20 S Ossicini L Pavesi and F Priolo Light Emitting Silicon for Microphotonics Springer Berlin 2003 E A Dalchiele F Martin D Leinen R E Marotti and J R Ramos Barrado J Electrochem Soc 156 K77 2009 Y Cui et al Science 291 851 2001 L Tsakalakos et al Appl Phys Lett 91 233117 2007 A Colli et al Appl Phys A 85 247 2006 C Meng B Shih and S Lee J Nanopart Res 9 657 660 2007 L Latu Romain C Mouchet C Cayron E Rouviere J Simonato J Nanopart Res 10 1287 1291 2008 M Morales and C M Lieber Science 279 208 1998 K Peng Y Yan S Gao and J Zhu Adv Mater 14 1164 2002 K Peng Y Yan S Gao and J Zhu Adv Funct Mater 13 127 2003 K Peng Y Wu H Fang X Zhong Y
36. saec diodes Fig 2 1 1 ELLS X 2 2 3
37. e Fig 2 2 d e 1 E I hv hv E exp4 hv 2 2 kT Maxwell Boltzman GEH HA f DAP DAP r
38. WP scili E 2 9 2 Fig 2 19 X Y Z R T X ROR Mae 32 un EASE EEST Fig 2 19 EPMA 33 2 10 2 10 1 PVD CVD PVD 1
39. RACH 3 100 4 TEM 5 TEM 6 7 P mis Xe Ds cops E gt CD N gt lt gt VA S AU N ee 1 gt PARS PA Fig 2 2
40. 2 hv E Ey E 2 3 13 C amp Zz 54 5 COC Es Es EplitivCh Pilk LANE TITERS RA AVE e amp g 3 2 3 r r
41. Fig 2 3 h Ge
42. N LaB 2 2 C qned eT 1 Q
43. W gt 12 5 W 76 45 Tilted View Cross sectional view a 20 gt 2 590 b COT minm CUBE nte nto o mio madii My n s y TS 5 10 ron m Ap I Y 1250 15 FE Fig 4 5 4 4 3 Ag Au Si Ag Au Si mFig 4 6 a Au b Ag c Pd Si SEM AgNO3 HF b Au 9 c 16 Table 4 1 4 2 4 3 Fig 4 6 Ag Au Si Refs 4and9 Pd Brahiti
44. PL 88 3 0 PL intensity arb units 400 2 5 500 Photon energy eV 2 0 LI 600 700 Wavelength nm Fig 4 13 89 1 5 4 4 9 Fig 4 14 C Pd Table 4 3 Si Si Lorentzian 4 3 Lorentzian os 4 3 ro lt 0 7 2 I IT BIKKFA DT YI ORS orll 1 7 Fig 4 14 ero 519 4 cm y 3 5 cm Fig 4 14 Si PSi
45. Fig 2 15 w 7 Vp vi AA Evi Vite Fig 2 15 28 v Einstein he ww
46. si Ni Ni 10 nm HF H202 Si p Si 100 HF 10 50 ml HzO gt 30 2 ml Fig 5 1 SEM Fig 5 1 b Ni SEM THig 5 2 SEM Fig 5 2 105 Ni SEM PL PL JERR amp PL intensity arb units aa lt 500 600 700 800 900 Wavelength nm Fig 5 3 d Ni catalyst Si PL intensity arb units 500 600 700 800 900 Wavelength nm Fig 5 3 106 e SiNW
47. Si 10 92 Intensity arb units SIN Ws 519 4 cm 71 001 mol L 1 003 mol L 71 006 mol L 0 02 mol L 0 04 mol L 500 Raman intensity arb units Raman shift cm 5 1 0 0 0 01 0 02 M mol L Fig 4 15 03 0 03 b 0 04 HO HO Pd PdCl HE HF 5 PdCb 0 003 mol L 20C 10 mm NH4HF2 2 N 3g 50 ml HO N 1 17 5 30 min 30 C Fig 4 16a HO L Fig 4 16b HO HO gt N Kit Sit OB 94 Raman intensity a
48. Fig 4 10 Si HF Si FTIR Si 614 cm XX 6106cm L 603 9 cm TO TA 720 lt 1107 cm1 20 Si 1000 1300 1107 enr Si O Si 4 1067 cm SiOx io TO 1150 cm Si O Fig 4 10 Si N 0 001 0 006 mol L 2600 3800 cm Si OH HOOD OH
49. Si black silicon Table 4 1 4 2 4 3 Si co SEM c c 80 4 4 5 PdCb PdCL Pd HF 5 PdCl M 0 001 0 04 mol L 20C 10 min NH4HE 12 5 3 g 50 ml 30 min 30 C Fig 4 8 Si HF Si 0 6 1 5 eV Si
50. CVD 5 VLS 6 7 8 910 Si Si HbO gt Fe NO3 3 HF AgNOGQHF Si 949 KAuCL HF Ag CrO4JHF 72 YDS Si
51. Si 40 Hig 3 4 e 1 Au RED YTY e amu OF ALLA CA 2 Si Table 3 1 HO 0 Si HzO M lt 2ml M24ml Au SiNW HF 10 H202 30 50 ml 2ml Au IUS Table 3 1 47 Top view CS view a 30 um 30 um Time 20 min MST 30 min H 40 min ek iss C s 60 min ro A on lt 1000 5000 Fig 3 4 48 3 4 3
52. Ue Vai VHP Heo Das mig 2 20 2 10 2 o e VAA DD pies ies TOR a o doc A PAP Fig
53. Si HF FT IR Si Si FTIR Si Bulk Si Si 4 Pd SEM Si F
54. 0 1 100 keV DIED X 10 100 keV needle mig 2 22 XX ff X X X LX 25 X 0 6 Fig 2 22 X hc 12 4 A T kV A 2 34 y 2 35 GIANT 0 UGE X TA ee X X X
55. M 0 04 mol L 5 4 1 Wavelength um 10543 2 1 0 9 0 8 LE Nn A a D Transmittance W 20 10 0 04 mol L 0 0 003 BE 0 02 04 06 08 10 12 14 1 6 Photon energy eV Fig 4 11 85 4 4 8 HF Si 0 3907 gt 3nm 51 0 0 SiO2 0 3 nm 0 09 0 lt 90 OH 2 Si OH HE Si Si H
56. Si Si SEM Si PL PLE FT IR Si Ha Ag WA CO AgNO3 HF AgjSOJHF AsO HF Si Au HF H0 Si 39 3 2 p Si 10x10 mm 100 2 4
57. 4 1 AgNO HF KRZ EA Si M Si Si Ag2CrO4 HE AgzO 1 HF AgO 2 HF AgsSO4HE 5 Si Ag Au Pt 4 Pd 7u Cla Pd Si Si
58. Pd 558 HF HzO gt Pd PL Fig 4 18 Fig 4 19 HFE H0 Pd Pd NHL4HP gt H0 96 Ag Au i n dope p dope 2335657 SIV CW Os MOR ear ey TVS 9 51 62 72 AgNOS HF
59. 30 1 Au 68 p type Si 100 2 4 cm 1x1 cm SPM lt A 10 min Pd 30 min 30C ae d NH HF H O solution Fig 4 1 69 4 3 4 3 1 EPMA PdCL HF 596 Si Pd EPMA WEHE SHIMADZU EPMA 1610 47 JC B ADP 5 32 3 20 9 89 A 43 T7638 Al Ca Te Dy U 4 3 2 X XRD Pd XRD RADIIC Rigaku X Cu 1 542 10 mm IAN sed 0 15 mm 4 00 min 0 010 deg RAUS HER s 20 00 mm 5 90 4 3 3
60. 10 60 min 30 C Fig 3 10 10 60 10 mHig 3 4 10 2 HPe 3 10 10 UT SIU KI RIV ea Ieee 2014 R z D n 1 Si 40 Si black silicon Ag Si 5 Au
61. PSi PEL PSi 3132 33 Fig 4 13 Pd Ag Au Si PL Pd Table 4 3 N CBD Ag Au Si Table 4 1 4 2 Refs 4 9 Fig 4 13 Pd VELAT UAP Pd Ag Pd 100 Ag Si
62. 4 1 2 3 4 ig 2 18 4 D O 2 X X
63. PdC12 Pd Si Si FRig 4 8 Si 1 11 eV Es 7 Si 1 2 eV Silk Si 91819 Wavelength nm ache 1600 1200 1000 900 u 0 6 0 7 0 8 0 9 1 0 1 1 12 1 3 1 4 15 Photon energy eV Transmittance e 8l Fig 4 8 H20 H202 Pd PdCl HE HF 596 PdCb 0 003 mol L 20 C 10 min
64. Si 3 1 54 Transmittance 96 Wi 0 5 0 9 1 1 1 Photon energy eV Fig 3 10 55 3 4 5 PL amp PLE PSi Si Si lt Si PSi HF Si PSi PL PSi 3132 8 PL Fig 3 11 bulk crystalline Si c
65. 2 Si Si 2 83 Transmittance 60 800 0 04 mol L 1600 2400 3200 Wavenumber cm 1 Fig 4 10 84 4000 4 4 7 EIRIS Fig 4 11 0 1 6 eV Si Si DIG F Si PdCb M 0 003 0 04 mol L H202 N 12 5966 R 1 1 n 1 2 Si 40 Si black silicon Z ERES 2 7 Ag Si 250 Si M lt 0 01 mol L
66. 2 26 23 2 6 lt 3 2 9
67. 519cm HO OX 2ml Si Si Si 20 Si Si Si Fig 3 17 a Fig 3 17 b Si Lorentzian 3 5 Lorentzian Is Oro y 2 LL Is ro 1 7 Fig 14 a ero 519 4 y 232 em Fig 3 17 b Si
68. X A Z s A s 2 3 6 2 3660 Z X T Fig 2 23 P dun tiii L M M DD KROZEFLICH SOCAL E EDO X Re Kg M K Vig uie L Li Lm M Mi My Fig 2 24 36 yu K xx L it M ix Fig 2 23 X Fig 2 24 XX 2 10 3 XRD
69. Fig 3 15 Si PSi 300 K EWER Qa 600 nm PSi Xe 38 Si Table 3 2 PSi Table 3 3 CANT PL 3 2 I t E 3 2 i l at a2 as 1 a 0 54 n 4 0 us a 0 40 n 27 us as 0 06 5260 us Si ai 0 56 1 1 9 us a 0 38 n 16 us a3 0 06 44 us anodic PSi 3 4 3 3 3 4 3 Hr 9s Yd 2 i a 3 4 eff Si IA VIET 17 TR 31 um PSi kc eff 10 um
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71. 71 cuoc tO 79 I T DIEI IE EUIS iE 72 4 4 2 SEM ARR ERE ERR 74 4 4 3 Ag Au SIF UV 4 Y 68 0D ECRER Lesern 78 444 5 E SEMA aues dE E E ELE 80 E 81 PAG PUR ea ate ee oe eee ee a ad oy od a ose 83 4 4 7 EIRIN uester tnn tnnt tano 85 7A 10 13 lt EN DIL EU 86 LUE SN DE E 88 a AEN NNI 90 gA 1O amd 96 4 4 11 100 DO ME AIR RO FA PA OMIN PAR CAR PRN NRN 108 PEE 104 J ass H 105 SE A UI 105 ONI SEM 105 c Ni SEM 106 d Ni catalyst Si 106 e SiNW tnta tatts tnts ta testna ateses tate reses estares enens 107 B 13 1 1 WREEK Si Si
72. NHL4HF2 HO N 3 g 50 ml H202 JEE N 1 17 5 30 min 30C Fig 4 9 Si 0 6 1 5 eV HO gt W 2 2 5 0 1 R HBO gt Z 2 5 Siu HSA HO gt JR Wavelength nm N 4000 1600 1200 1000 900 Transmittance 06 07 08 09 10 L1 12 13 14 L5 Photon energy eV Fig 4 9 82 4 4 6 FT IR PdCL Pd PdCl HE HF 5 PdClh M 0 001 0 04 mol L 207 10 min NHLHF H02 12 5 3 g 50ml 30 min 30 C Si
73. Si SEM HOC HEIL 5000 fF CHS M 2 ml Eig 3 2 b M lt 2ml MZ4ml Si 74 Si BbO gt Si 43 44 Au Jl I EE Au TyF ZR HF 30 H202 50 50ml 2 ml Au OJE X 1 30 nm 30 min 30 C Fig 3 3 Au SEM 5000 3000 Au 10 nm Si Hig 3 3 c Si Au
74. 7 12 nm Fig 3 3 a Au 1 nm SEM PSi 12 Au 20 nm 45 Top view CS view 10 nm 20 nm 30 nm 9000 9000 46 TyF ZR HF 30 H202 50 50ml 2 ml Au OJE X 10 nm 10 60 min 30 C Fig 3 4 SEM 1000 5000 10 Si 30
75. 0 09 140 Cassie Wenzel vakaa HF PSC Si 86 HF cleaning Fig 4 12 87 449 PL PSi Si Si 2 Si PSi HF Si 2332
76. FEO IE SK PdCh Hig 4 4 c 6 30 um 74 45 Tilted view Cross sectional view PdCI 0 001 mol L 0 003 0 006 0 01 0 04 x 1000 x 1000 H02 HzO gt Pd HF 596 PdCb 0 003 mol L 20C 10 min NHL4HF2 HO N 3 g 50 ml HO N 1 17 5 30 min 30 C NH4HE HO gt HO HzO gt 1 17 5 Pd PdCb 0 003 mol L Fig 4 5 HO gt 2 5 15 lt 2 5 Si 2 2 5 Si
77. FT IR amp HzO gt Dy FY TUS HF 30 2 5096 50ml M M 1 12 ml Au OJE X 10 nm 30 min 30 C Fig 3 6 HF Si FT IR Si lt 614 cm XX 610 6 cm L 603 9 cm TO TA MBER 1107 em AAO TB Si 1000 1300 cm 1107 em Si O Si PEK 71067 cm SiOx TO 1130 cm SiLO 2 Fig 3 6 Si 2600
78. Fig 4 12a Pd porous columnar structure PCS Si Fig 4 12b PCS Si HF 1 Table 4 3 kerma Fig 4 12a PSC Si 0 HF PSC Si 0 71409 2 G 1 2 0 Cassie s cos A cos A cos 4 2 TIT A 8 i 1 2 Si Si Asi 65 amp ZER Aair Oair 1809 4 2 05 SiO CFE Si 90 Si RE RI HER Asi E Aair O v3 ALOE CH 8 05 140 RX 6 0 lt lt 180 H HE 4 4 2 09 140 mig 4 124 Fig 4 12d
79. z 0 z gt 0 E EL_ z 0 E E E 2 22 dE dE dE E EN 2 23 dz dz dz due E 1 N n 1 ik 2 24 E n 1 ik R 22 1 N 1 N n 1 k 2 25 n 1 k 2 LCA BL eal WIRE a FS d T R 2 a 1 exp ad 2 26 R exp 2ad R Ril T exp ad 2 27 R 2 26 So MIE LK BOSS Ra 2 26 2 27 R
80. B Ahk Ahk get inii ea th Si Si n Si 100 Ey FY TERK HF 50 H202 30 40 ml 5ml avc can Table 3 3 109 10 Catalytic etched Si PL intensity normalized 10 Anodic PSi Hy Ph PI xi M 103 m MIT ut 0 50 100 150 JN Time 45 Fig 3 15 62 3 47 Fig 3 16 H20 8 Si HF 30 5096 50ml M M 1 12 ml Au OJE X 10 nm 30 min 30 C Fig 3 16 a Si FV VLE HzO Fig 3 160 HbO HFig 3 16 a Si
81. 25 c m X Si A 5 LL1 RR 5 1 2 NN 6 19427 8 III 6 A A EEEE A E E E E E E E P EEA 7 2 5 5 oo 8 21 8 22 Photoluminescence kk 11 AE 11 2 2 2 pn IRR 12 2 2 3 2 15 DATE I gt 16 2 3 PLE Photoluminescence Excitation 17 EE 17 3 17 2 4 TA E E A ADE V 19 20 cU GE 20 DDN PH 20 2 6 MAWE kk 24 WEE pe 26 ponEE e USS MON SUOT aUENkS 26 TO 26 i 28 DX 28 2821 30 2 9 EPMA Electron Probe Micro Analyzer jiH XE eese 31 NN 31 JODI I 32 ucc Ee 34 PROM Ve PR 34 DN Ge vvvE 34 2 11 XRD X Ray diffraction kk 35 CCG 35 2 10 2 X 35 DMO ETT 37 VRT pa JININ NOSES 38 3 Au Si
82. 38 Oi OO 39 ii 40 3 3 SAEC OST QUIE FB KE RR kkk i UUI 41 00 a 41 2909 E a a 41 JTK U DT 41 UI et sapiens NERENN AAEN sr sates SuSE nd Se tna 41 SL 41 336 A HAE tette 42 3 3 7 naene Al 2 42 2008 Mags GT Le uos css edis e e e E eU e Ee Ee 49 Sa cfc saa sanassa 43 LU AME ew NN CN 43 342 ASSI 43 QURE C i PNE 49 3 4 4 J6URIN A 07 KN eee a o a a aa aa nnn 50 3 4 5 PL amp PLE 56 3 40 FE JOT GR UI KE oi 61 Dae E IE sss uu 63 Be 66 4 22 NHHF H gt 02 Pd Si 68 sas ese a P 68 E SEI 68 ness es oe kaataa 70 T9 K EIUS cet cen cane ee once 4 3 3 SEM weccecccccccsssccssssscsssssscsssssscsssssesssscsssssscsssssscesssssceesseeves 70 4134 7 9 eee ER JE ent et ease sa tea 70 qs P coucou c III 71 dou n S beue imi mM IMEEM EUM DM DU MU M UE 71 BST PE m 71 1
83. H 18 24 Fourier Transform Infrared Fig 2 10 MT 36 ISI lo Eee y eee Mm M 1p v I x i cos 2 2 5 LIC 7 ee eae
84. Si 3435PSi PSi PL Fig 3 11 b Az PLE
85. 2 7 1 after glow ERAS fluorescence phosphorescence 0 1 PEELE lt 10 ms KX my 1 407n homAmen IM nn 2 29 ATE 3c mC EKTA XK D n m hoz 4 4
86. 32cm a 100 Si 4 0 cm HIEERa 100 3 6 lt Si Si Ahk Ao cO Intensity arb units 00 505 510 515 520 525 530 535 540 Raman shift cm b Tp arb units 12 14 Ore iN ON CO Intensity arb units 510 Fig 3 16 515 520 525 Raman shift cm Fig 3 17 65 3 5
87. 9 HF H Si 0 X 90 gt 3nm SiO 0 LO SiO2 0 3 nm 0 09 0 lt 90 OH Si OH HF Si Si H Fig 3 5 Si Table 3 1 HCI HNO 60 Si Au a HF 50 20 Si b mRg 3 5 a Si 0 HEF Si 140 Fig 3 5 b HF cleaning Fig 3 5 49 3 4 4
88. CCD detector 15 4 3 8 2 EO Figure 2 17 Ar Laser A 488 nm 50 mW NEC GLG3110 Laser Filter LL01 488 12 5 Semrock 4 J6sn Hii OD Filter LL02 488RU 25 Semrock TICA Y y h 0 05 mm 7 1 44 4 4 1 EPMA Fig 4 1 PdCb HF 596 Pd Si EPMA Pd 4 37 A Si 7 13 A Si Pd Si Pd Si X 5 Fig 4 2 Pd Pd Pd Do Fig 4 3 C Pd Si XRD Pd ASTM card
89. SEM SEM JSM6330E 4 3 4 FT IR FT IR E4 Magna 560 K 400 4000 cm 70 4 3 5 FTIR WE EX CT 25C JASCO oT Fast 23 PI 2 0nm 8 0 nm 400 nm min 2500 nm 190 nm 2 0 nm 4 3 6 4 3 7 PL BE PL He Cd Laser 4 325 nm Laser Filter UTVAF 34 U 2 280 380 nm Filter UTF 37 L 370 nm 1 mm
90. 22 um PSi Hooft Fig 3 15 Si PSi Si PLE Fig 3 11 b PSi PLE Si Si 4 mig 3 11 b MEX 610 6 cm L 603 9 cm c Si 61 A
91. NHLHF gt Ag Au HF 42 p EO Si 10x10 mm 100 2 4 Q cm Si 10 50 HEF 1 Si SPM sulphuric peroxide mixture Si SPM HzSO4 HbO gt 4 1 AgNOJHF G 0 0 2 Si 5 10 STA 8 Si Pd NHLHP gt HzO gt 30
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98. 10 22 Photoluminescence 2 2 1 Luminescence RIE ETIR DOH GRAM FH ORL Photoluminescence IX 74 hw Gt oe Fig 2 3
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101. 60 K 400 4000 cm 3 3 4 EHU L 7 RA D 38 FT IR EX CT 25C JASCO T Fast 2 0nm 8 0 nm 400 nm min 2500 nm 190 nm 2 0 nm 3 3 5 PL He Cd Laser 4 325 nm Laser Filter UTVAF 34 U 2 280 380 nm Filter UTF 37 L 370 nm Y v P 1 mm CCD detector E 41 3 36 PLE PLE Hitachi F 4500 Figure 2 8 Xe 300 K 3 3 7 Nd YAG Laser 4 355 nm Laser Filter U330 Fil
102. E Hig 2 3 GP psx 1 10 Haynes s rule BE BE d WETTEN
103. MaxLine LL01 488 12 5 c HV Filter 2 Razor Edge Semrock Filter 1 N Mirror Ar laser Mirror Collective Lens Spectro CCD HL H Scope Sample Fig 2 17 30 2 9 EPMA Electron Probe Micro Analyzer 2 9 1 M EPMA i SEM X X QB szU um 0 001 w 1004 usu Cams EPMA
104. Q cm Si re TIVLCAL 10 50 HF 1 A St Si Au HF H202 YR OMS 30C CHS 21 FEEL 1 Au ERSE Au JAT p type Si 100 2 4 cm 1x1 cm 30 min 5 C HF 1096 H2O 50 solution Fig 3 1 40 3 3 3 3 1 SEM JSM6330F 3 3 2 3 3 3 FT IR lk Magna 5
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106. Si PL Table 3 2 Fig 3 11 a c Si Fig 3 11 a c Si 3 4 eV 4 3 eV 5 3 eV 3 BHO 33 c Si CPs mig 3 11 a c Si PL Si PL EX 2 eV Hg 3 11 b Si Fig 3 11 b Si 2 0 eV 2 7 eV
107. T IR Si Si HF PL Au Ag MLE Si Bulk Si Si 103 mh ere DUBETU EA 104 a Ni Si ET Si HF
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109. ZR HF 30 H202 50 50ml 2 ml Au OJE X 1 30 nm 30 min 30 C Fig 3 8 3 9 FT IR Fig 3 8 Au 5 nm Au Au nm Fig 3 3 Au Si Fig 3 8 3 9 92 Transmittance 906 10 10 800 1600 2400 3200 4000 Wavenumber cm h Fig 3 8 Wavelength nm 102 2000 1600 1400 1200 1000 10 Transmittance 96 ju O C m 107 06 07 0 8 09 1 1 12 13 Photon energy eV Fig 3 9 53 TyF ZR HF 30 H202 50 50ml 2 ml Au OJE X 10 nm
110. ater Chem Phys 129 733 2011 108
111. rb units Intensity arb units 5194 cm P Raman Shift cm 1 10 N 00 Fig 4 16 95 15 20 4 4 10 NHHF gt HF NHIHE H202 HF HzO gt R L Te Pd Si 2 2 Si H02 4 5 2 2 2 2 2 E 0 695 V 4 5 TITE PLE Sa AHR IC BET OMR IEN CHO IN KY HE H202 DIB AVAIL HF R L V Ag Au Pd HE H20 OYE Si 4 6 4 7 cmd Ag Agch E 2 0 7996 V 4 6 Au gt Au E 1 42 V 4 7 Pd o Pd ht E 0 83 V 4 8 Si WII EA POT y FITB 2 ATA CH 4 HzSiFf Si Si Si Ah 4HF gt SiF4 4HT 4 9 SiF4 2HF HoSiF 4 10 NH4HE H20 4 9 4 10 OTA qu E Pay 7 HF Si
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113. u 2 13 an Lod Or k a IR WIIREDEMETD6 c C A Eolo 2 14 eo k w E E E exp fik ure cot 2 15 2 13 HE 2 16 2 N z 2 17 N pue 2 18 n k z N n ik 2 19 21 2 15 E E exp LE J exp i3 2 20 C C 2 12 a 2ka c 2 21 k N k ABE Ei Eoexplio z c t na i A Jf Eioexp exp N c t E Eroexp icx z c tf Z 0 gt 7 Fig 2 11 kys Fig 2 11 z
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