第一回 - JASMA 日本マイクログラビティ応用学会
Contents
1. Q A D2. Gz G Output Voltage of Photo Diode V_PD V 19 19 5 20 20 5 21 time mn Fig 2 Switching of a UV lamp with an acceleration switch 2 2 MEMS Micro Electro Mechanical Systems 3 MM 2860
3. DO DO POL Point of Load IC DC DC 3 3 1 Tig 6
4. ODN Int J Microgravity Sci Appl Vol 30 No 1 2013 2 4 AC100V DC28V DC5V Table 2 AC
5. ISS 305 8505 2 1 1 i apan Aerospace Exploration Agency JAXA ISS Science Project Office Institute of Space and Astronautical Science TSAS 2 1 1 Sengen Tsukuba Ibaraki 305 8505 Japan E mail natsuisaka makoto jaxa jp 64 64
6. Fig 10 Nch MOSFET Gate OFF E00 a n p Nch MOSFET Gate ON Fig 11 ON OFF 5 p Fig 12 Effect of input capacitance Ciss MOS QFF LED R3 OFF Fig 9 SW2 OFF FET R3 R2 R83
7. Vps vs Tp 5V TO 220 2 54mm Hig 4
8. AC AC 2 3 ISS DC DC
9. LED LED Hig 7 LED Fig 3 R1 LED V LED MM
10. Fig 3 1 ON LED R1 R1 LED 3 3 FET LED ON OFF 2 8 FET Fig 3 4 Fig 8 Fig 9 2 R2 R3 4 Fig 8
11. FET Hield Effect Transistor ON OFF N P NPN PNP FET 2 0 Fig 3 8 Fig 3 2 Q1
12. JASMA A JASMA 2 5 Fortran
13. 3 MMA7260Q 6mm x 6mm x 1 45mm MM 2860 3 SU DIP 2 54mm 2 3 ON OFF DIP ig 3 1 LED Fig 3 2 ON OFER LED ON OFF
14. 2 2 1 Fig 1 1 2 3 4 A D ON OFF AC100V DC28V DC5V UV UV
15. OFF 1990 FET FET Field Effect Transistor FET FET 2 2 C ig 4 FET 3 ig 3 4 D 8 GATE
16. LED Fig 9 R3 Fig 9 R3 Fig 13 ON Fig 14 R2 LED OFF LED Fig 15 R3 R3 LED ON OFF LED Hig 16 3 4 2 2 8 MM 2860 MM 2860 5V 8 3V 0 3 83V 3
17. DC DC Table2 Power converters AC DC DC POL
18. LED Rpse p FET Ciss Fig 13 Switchimg of LED with MOSEET without a gate pull down register R3 Vc s OFF AO Fig 14 Switching of LED with MOSEET without a gate pull down register R3 Vcs ON 71 Int J Microgravity Sci Appl Vol 30 No 1 2013 5 RNN OR ua Ee gt maas sic lt sf ese SS WR II Ye Ia L i aa mm saasaaaaaL uaa uuuus uussus ii a s _ Fig 16 Function of a gate pull down register R3 ITRLI540NPbF Vps 100V Rps 0 04 Q jp 283A TP 220
19. LED Fig 3 LED1 VF II W LED AC VF LED VF 1 5V K A K A Fng 7 LED 68 8 4 R1 R1 LED 11
20. A 9 A
21. Int J Microgravity Sci Appl Vol 30 No 1 2013 64 73 How to Make an Acceleration Switch for Parabolic Flight Experiments No 1 A lecture for a Beginner to Make a Microcomputer Controlled Electronic Device Makoto NATSUISAKA Abstract The lecture introduces how to make a microcomputer controlled electronic device for a beginner A series of lectures provides not only how to measure a physical property with an electronic sensor convert it to a digit analog digital conversion switch on and off an electronic circuit with FET Field Effect Transistor and control those with a microcomputer but also practical know how to design an actual electronic circuit choose appropriate electronic parts and mount those to a PCB printed circuit board with explaining how to make an acceleration switch The switch can automatically turn on and off a connected device according to an acceleration level measured with an acceleration sensor and contribute to parabolic flight experiments through size reduction of an apparatus less operation and precise control of the experiments Keyword s acceleration microcomputer sensor FET parabolic flight 1 2
22. 800mV G 1G 800mV 0G 1 65V 71 1G 1 65 0 8 2 45V 1G 1 65 0 8 0 85V Vi G y z ai G x z Vi 1 65 0 8ai 2 MM 2860 MM 2860 Fig 17 IC 28 600MIL MM 2860 Table 4 MM 2860 Fig 17 Accelaratnon
23. GND ON Vx Vy 1 65V Vz 0 85 2 45V SLBRBP SLEEP 3 8V H SLEEP 3 3V DIP Table5 Pin assignment of MM 2860 from the user manual of MM 2860 Sunhayato Corp ge Selectl g Sel
24. R2 SW2 V2 V2 FET R3 FET MOSEET 69 Int J Microgravty Sa Appl Vol 30 No 1 2013 LELD 1 LF 1 BETTERY 1 ITT H 1 TTERY LI Fig 8 Basic concept for switching with FET LEC 1 LF 1 BTTERYT LI LII TEH 1 EHPHTTER LI Fig 9 Switching circuit of LED illumination with FET MOSFET R3
25. 66 66 Fig 4 FET RLI540NPbF International Rectifier TO 220 Full Pak Package ON OFF FET MOS MOSFET JFET FET MOS 67 Table 1 FET Features of switching devices
26. FET FET R2 R3 ON OFF LED Int J Microgravity Sci Appl Vol 30 No 1 2013 FET FET International Rectifier IRLI540NPbF FET Nch Pch
27. Rpse ON 5V 5V 10 L2FET Logic Level FET L2FET Logic Level Gate Drive Logic Table3 Keyparameters for FET selection Nch NN CR RA LFET FET Vps NN 3 5 ma OIL Ip 1 Rps TO 220 0 70 FET
28. Fig 2 65 Int J Microgravty Sci Appl Vol 30 No 1 2013 AC100V DC28V A D Fig 1 Components of an acceleration swntch z Gz 0 25G G UV Gz 0 25G UV V PD UV Photodiode Gz 0 1 0 2G UV V PD 0 2 2V Gz 0 25G UV Gz 0 25V 0 2V UV
29. C BASE E BASRE Int J Microgravity Sci Appl Vol 30 No 1 2013 LE 1 LED 1 LF BAHTTERY BATTERY 1 1 1 1 SITEH li Fig 3 1 LEDillumination Hig 3 2 clYcunt Switching crcunt wrth a mechamical swrtch LED 1 uF LED1 uF BTTERTY BHTTERY 1 LI 1 LI LEasE gt LeaTE S Fig 3 3 Switchimg crcuut Hig 3 4 Switching crcunt with a NPN with a Nch transistor MOSFET 0 TRANSISTOR NPN NPN PNP NPN Fig 8 9 1990
30. http www marutsu co jp index php 3 MM 2860 dsPIC http akizukidenshi com https www sengoku co p RS http jp rs online com web 1 MOSFET IGBT 2013 1 20
31. OK MOSFET Fig 10 Nch NPN IMOS Metal Oxide Semiconductor NP PN p Fig 11 NPN p NNN FET Field Effect transistor
32. GND 4 OK g SRLECT g SELECT 2 DTP Table 5 2 g Select1 g Select2 1 2 ON OFF ON OFF 800mV G 800mVG g Select1 OFF g Select2 OFF 1 2 1 2 ON x yz
33. I1 LED 11 IF IF I1 JE 12 1 3 mA I1 Q RI _V1 VF 1 A1 R1
34. 5 10 4 ER ES TR POWER TEL 2 0511 0738 Fig 5 DC DC converter left and series regulator right Fig 6 A bread board and the internal connections Int J Microgravity Sci Appl Vol 30 No 1 2013 3 2 LED LED 2
35. Nch DC12V 15W 1 25A Vps 12V 3 Tp 1 25A Rpstow
36. ect2 OFF OFF S00mV g ON 600mV g OFF 300mV g ON 200mV g 72 72 4 4 1 LED FET FET FET 73 Int J Microgravity Sci Appl Vol 30 No 1 2013 4 2
37. sensor module MM 2860 and 1C socket Table 4 Pin assignment of MM 2860 from a user manual of MM 2860 Sunhayato Corp i X 3 Y 4 Z 11 3 3V 12 13 14 GND 5 16 17 SLEEP Mae L 18 3 3V 2 26 3 3V 27 3 3V 28 SV Int J Microgravity Sci Appl Vol 30 No 1 2013 5V 3 3V 5V 5V 8 8V 3 8V OFF 3 8V 3 3 8V 5V GND
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