平成24年度和歌山県工業技術センター研究報告 （4.13MB）
Contents
1. 1 Krzysztof Matyjaszewski et al Chem Rev 2001 101 ps 2921 2990 2 Craig J Hawker et al Chem Rev 2001 101 p 3661 36 88 21 11 MEMS 12. 3 2 15 mw 6 6
3. 1 2012 p 37 46 2 1985 4311 p 1 032 1042 3 1994 13 p 73 76 4 1996 15 p 98 101 4 PVC
4. 2 1 1 CzMS Wil1iamson 80
5. 2 2 1 1 100 2 10 7 3 50C 35
6. 2 4 120 1 1 4 20wt 3 SS 3 Nafion SAC 13 PT 0 O RI Neat 120 C O 1 15
7. 2 2 2 1 PLC BLSD 2
8. E PE
9. 2 2 1 30g 0 1 45C 2 10 B 2 2 4 1kg 3 8 1kg
10. 2 2 1 8 10 8 10 7 1 3 1 EE EE EE EE a 2 2 CM 600d 2 3 CR 500DX 5mm 1 3 2
11. G EL 2 EL 1 2 O 9 OO 3
12. 4 2 2 i UM H 27 so 3 4 10 0 0 1 10 3
13. 1 25 2 1 2 30 Brix 30 40 50 60 70 96 3 15N 4 1 2 p 4 1 Na 2 A N 40 50 60 70 96 4
14. dd i J a A _ a A 2 3 8 4 15 3 a 4 0g 12U0mL 85C 50OmL 4 0g 6 a 3000rpm 10 3
15. TT MEMS Micro Electro Mechanical Systems
16. 9 9 EL 1 H 22 EL
17. 1 ag Tang C W VanSlyke S A Appl Phys Lett 1987 51 12 p 913 915 b 2651233 10 1 PCBM PCBM
18. 9 0 2 2 9 PSD d df tan6 3 3 2 2 PSD d 1 23 Petersen 57 gyVb 16g T rrgre 4 V V HB b d TT
19. 2 350 000 340 000 330 000 320 000 SN 310 000 E 2 300 000 1 280 000 270 000 260 000 250 0 10 8 6 5 4 3 2 1 09 0 8 07 06 05 mm 3 4 2 5 HHJ SS400 y 1 0595x R 0 9995 ww oo CH a CH N mm2 a RN NN es 8 8 8 0 50 100 150 200 250 300 350 400 450 N mm2 4 2 3
20. 10 M 11 MEMS NN 12 12 15 22 25 1 1 6 5 21 4 751 2
21. 3 3 L 4 1 PVC 3 3 FT IR K 1 0802001 5 1 PE PE
22. BCA WIT 1530 WIT 1529 5 5 150 60min WIT 1533 WIT 1529 5 5 2 2 60C 90 RH 500h 150C 30min 500h 150C 60min A ER M THP 47 um I
23. 40zm 10 500 150 C 60 C 90 RH 500h 60 90 RH 500h 0 pa 814 Ni 204000 850 PEES i ora 36 M THP 914 wrris30 144000 WIT 1S33 35 326 2 900 MM PEES a M THP 2 3 1
24. 4 3 4 10ppb 5 Wn en CoO 0 5 10 15 20 25 day 95 Wn CoO 0 5 10 15 20 25 qay e 12 Ethano
25. 1 2 3 4 PVC 5 6 CAE 7 8 9 EL
26. 350 000 300 000 S 250 000 RR 200 000 Ei 5 1soooo uk 100 000 50 000 0 60 50 40 20 10 5 3 2 mm 6 7 5 13 SS400 500 CH1 mCH2 a CH3 CH1 CH2 CH3 N mm2 200 N mm2 7 2 4 JIS Z 2241 8 SS400 30 10mm
27. 1 polymer reaction time h Initiator PO 24 AIBN P1 20 PEB CuBr PMEDTA P2 19 TEMPO BPO 1 3 P3 36 TEMPO BPO 1 0 P4 19 Aldrich 700703 P5 12 Aldrich 700703 P6 19 Aldrich 700703 19 0 MeO MeO OAc O CI CMS AMS CzMS 1 AMS CMS O N OAc 2 Macroinitiator 2 2 2 Solvent conversion MM M PDI Toluene 48 36300 60900 1 68 THF 30 8890 10600 1 20 DMF 64 10900 12500 1 14 DMF 85 20100 28400 1 41 xylene 66 13600 16300 1 19 xylene 46 8460 9170 1 08 DMF 44 9130 12700 1 40 Macroinitiator AMS 2 1 1 Ph
28. 22 RCJ 2012 22 p 139 142 12 1
29. lmm 3 CAE J 2 mml 9 10 0 3t
30. 47 zum 2 WIT 1519 WIT 1519 WIT 1521 WIT 1529 WTI 1519 WTI 1521 82 WTI 1519 WIT 1521 2 8 WIT 1519 WIT 1521 5 5 WIT 1519 WIT 1529 8 2 1 47um WIT 1519 WIT 1529 5 5 WIT 1519 WIT 1529 5 5 CA 2503 4 4 3m RA FS 045 CA 2503 4 WIT 1519 WIT 1521 WIT 1529 3 150
31. 3uL SE 30 5 3mm i d X1 5m 165C 230C 250C 2 9 4 4g 50mL 15 3000rom 10 50mL 2 10 X 5cm 3 3 1
32. _772 eV d _C K7 16KEd t 1 t gt K G A A 0 8 PSD d 69 2 V 5 3 8 1s AD QADC AMS Analog mix signal FPGA Xilinx Kintex 7 ISE Design Suite 14 3 PlanAhead CPU SDK 6 RTL XPS MicroBlaze PowerPC 7
33. PDI 8 macroinitiator macroinitiator i I DMF wi CMS macroinitiator AMS CMS macroinitiator P7 Mn 8460 Mw block ran 3 i 1 NaOMe x 2dye Et sN MeO MeO OE OA O CI 3 NaN 3 1 THF MeOH t 2 THF Kt 3 DMF r 4 oDCB 130 N n 3 MeO MeO OAc O CI 3 P8 9170 PDI 1 08 P7 CzMS P8 Mn 24400 Mw 27800 PDIL 1 14 3 NMR AMS CMS CzMS 2 0 16 3
34. 1 AI A SUBP 8 2 8 25 8 2 4 2 4 4 1 3 2 4 9 gt 649 6261 6 0 PE OE A 2 7 FAX 073 477 2880 E mail wintec wakayama kg go jp HP http www wakayama kg go jp HP
35. 3 DINP Irganox 1010 75 0 1 V 1ML 4 00kgf cm 160C 3 2cmX2cm 2 2 180C 7 5 FT IR IRPrestige 21 CM 3700d 1 4TR a b BL DINP 7 3 16mL 37C FT IR 3
36. 90C 30 25C 3L HPLC 2 3 2 0 0 2 0 2 0 2 1 0 2 4 MycoJudge
37. 1 PVC 2 2 1 PVC 1100 CaCO0s 3 Ca HPO0 2 CazPz07 CaHPO4 Alfa Aesar DINP BASF Irganox 1010 PVC100
38. 2 5 gt 65 JF 1 2 55 1 4 L 3 EN Tf Tf 10 20 30 40 50 C 25 5 4 1
39. 3 01 rg 0 1 3 5 12 0 13 0 10 4 100 100 10 4 we
40. Glass frame Torsion mirror 4 2 PSD Position Sensitive Detector 5 7 Lens Torsion Mirror Optical scanner Beam sphtter Semiconductor laser 5 2 PSD f 2
41. 2 1 1 2 6pm HH 2 8 26 3 2 3 3 10 0
42. 5 SS400 i 1 lt gt y 1 0598x CH1 CAE 2011 p 2 7 2 a CH1 oe 63 1998 F 44 F ee y 0 9412x Ch4 0 R 0 994 0 50 100 150 200 250 300 350 N mm2 10 14 7 1 80
43. CAE Computer Aided Engineering CAE CAE CAE 2 CAE 2 1 CAE 1 9 Solidw orks Simulation 2012 gt gt A gt 1 CAE
44. 2 1 2 No3 CA 2503 4 RA FS 045 PET HL92W 00zm PET 50 zum 400 5 50 umX50 um
45. 2 2 JIS Z 2241 2 SS400 JIS4 2 1 12 2 1 2 C 3 1 1lmm 2
46. 3 1 2 1B 300 PPE i 1B 1 250 Q_ 200 cE L ey 1 9 150 SS 1oo ns 3 7 m 50 0 0 10 2 n 30 Volage V 300 2A 250 200 EE 9 so 150 roo m am 50 0 0 5 10 15 20 25 30 35 Volage V Volage V 3A i 20 E be 5 o 5 io am m Volage V 3 Volage V 18 2A 2B 1 9 3 7 8 Brightness
47. 15H m 75h m i 1 0E 15 165u m 165u m 50 oulm 1 0E 14 H H 1 0E 13 75u m 75L m lo 1 0E 12 100u m 100u m 1 0E 11 318u m 318u m 1 0E 1 100h m 100L m 4 NY 1 0E 08 1 0E 07 318u m 318L m 1 0E O06 1 0E 05 1 0E 04 NAK KN 0 100 200 300 wn Sa PO h 1 ai WIT 1533 WIT 1529 S S Tg 120 C 30min RA FS 045 1SV MM MM 400 500 1 0E 15 1 0E 14 1 0E 13 75Uu m 75 1 0E 12 1 0E 11 G iB 1 0E 10 50u m 50u m ti 1 0E 09 165L m 165h m 1 0E 08 75u m 75u m Mi 100U m 100u m 1 0E 06 318U m 318U m 100u m 100h 1 0E 05 1 0E 04 I I 0 100 200 300 400 500 h 318u m 318h m DLR b WIT 1533 WIT 1529 5 5 Tg 58C 150C 60min RA FS 045 15V 2 60C 90 RH 500h 11 6 CAE 1
48. DRN420DA 9 UOT204 BS65 RE300 GC 14B 2 4 2g 6 6 2 5 2 6 2 0g 5 01 2 7 4g
49. 120mL 85 4 50mL 5m 0 9mL 50mg 50mL 20uL Silicagel 70 F Plate wako 4 1 10cm 254nm 2 8 4g 120mL 85C 4 50mL 20mL 3mL 25m
50. 4 3 A an M THP Nm um WNIT PRCA ee WT_l533 wiT 1529 35 CA25034 509 89 WIT 13192B4MZ0 Smol CA2503 574 96 2B4MZ 2 4 3 kN m Ln Wr 39 38 LwWTT 1S192B4MZ 982 71 26 WIT 1S19WTT 1521 5050 33 26 18 13 23 14 102 1 21 18 1O1 6 1 26 22 19 WIT 1530 WIT 1529 50 50 me za slsw lelwlglis WIT 1530 WTT 1529 50750 WIT 1519 WTIT 1521 20 80 9R 1 WIT 1533 WIT 1529 50 50 WIT 1533 WIT 1529 50 50 BCA PGMAC 10
51. PVC 1 FFT 1 2 1 180 10 15 2 a b 0 PVC BL 0 5 10 15 20 25 3035 1 3 2 LL
52. 2 1 oe ot TT ee oh i a ES Entry 1 3 2 1 Entry 4 2 Entry 1 3 1 Entry ROH oH 2 3 OH 4 gt 99 85 h 16 2 OH Neat 120 0 RCO H 1 0 eq 1 0 eq Entry 24h oO lt 1 99 939 5 2 81 18 3 88 86 4 O 4 3
53. PT Es frf N OH H H O Ho H HO OH RS HN oH 2 1 HOOC 0 H O E OH HO OH O HN OH OH 3 II 4 1 2 N Takakuwa K Saiyo M Ohnishi Y Oda Bioresource Te ch 96 1089 1092 2005 2 1 35 000 1 821 5
54. 2 MEWS 1 Torsion bar 1 1 IT 1 MEMS SOI Silicon on Insulator 2 2 Si0 2 a Si0 TMAH Tetra Methyl Ammonium Hydroxide Si
55. 24 5 MEMS MEMS MEMS 2 1 http ednjapan com edn articles 1202 14 news078 html 2 Toshihide Kuriyama Toshikazu Aoi Hiroshi Maeda Takaki Itoh Yoshifumi Ueno Toshiyuki Nakaie Nobutika Matsui Hiroyuki Okumura Sensors and Matreials 2011 23 7 p 435 448 3 Toshihide Kuriyama Toshikazu Aoi Hiroshi Maeda Takaki Itoh Yoshifumi Ueno Toshiyuki Nakaie Nobutika Matsui Hiroyuki Okumura 2012 IEEE International Symposium on Electromagnetic Compatibility EMC 201223 p 33 4 E 2010 130 p 575 579 5 Kurt E Petersen IBM J RES DEVELOP 1979 24 p 631 637 6
56. SDK PlanAhead RTL RTL RS232 Uat 1 sout 8 gpio 0 GPIO O pin aa WO 1 GPIO 10 pin a gh 2 GPIO IO mm a DO 2 GPIO 6 RTL 4 20 m 5mmX5mm 2mm 8wum Ze 7 1600 1200 V oo 8 0 0 5 1 kV 7 8 9 a b MLMS 1 a b 9 1kY 1 100 2kV 10V
57. su 70 e9 91 72 es 3 6 1 zi 67 FE lz dld T80
58. 2 b Si0 2 e Photoresist S10 C Adhesiye sheet 2 3 Support beam Micro mirror Torsion bar 3 20um 10um 80 1006 20 um 5um 14 82 HOYA SD2 4
59. 86 96 1 Nafion SAC13 Zr0 S0 2 SS 3 Nafion SAC 13 26 M 1 pm 100 80 60 me SS 3 An Nafion SAC13 mm ZrO S0 20 0 0 5 10 15 20 25 30 h 16 2
60. 2 3 2 3 2 Ss 4 9 14 19 24 29 34 day 3 3 3
61. P8 4 A P9 Es 3 5 P8 350nm P9 350nm 650 nm P9 ITO PEDOT PSS P9 Al Jsc 0 04mA cm Voc 0 07V 0 0016 a 4 P9 UV Intensity a u 250 350 450 550 650 Wavelenqgth nm 5 P8 P9
62. 3 3 1 26 1 0 35 N 1 3 2 2 3
63. a 9 4 6 3 2 3 1mm 0 2m s 1200rpm 3 77m s 600rpm 1 89m s 60rpm 0 19m s 40C 30C 20C 30g 30g 1009 9 40 30 C
64. 3 9 5 5 H 28 16 27 31 27 12 6 6
65. Al m n 1 1 2 3 1 J 3 7 1 2 1 2 TB 3 7 3 7 1 2 TB 1 9 1 9 1 9 2A 3 7 3 1 3 ZA 1 9 1 9 1 8 2B 3 7 3 7 1 2 2B 1 9 1 9 1 7 3A 3 7 7 1 2 3A 1 9 1 9 1 14 3B 3 3 7 1 2 3B 1 9 1 9 1 7 H NMR 1 9 1 8 3A 1 9 1 14 3 4
66. X 1 FT IR 3 DINP 3 5 PVC DINP PVC
67. dlxd T8H 1 3 7 XK 2
68. 3 1 21 7
69. 6 _ a 9 SU f a 121 7 8 5 93 1 16 23 3 24 65 p 100 103 2 2002 p 92 93 24 26 3 60 TEL 073 477 1271 FAX 073 477 2880
70. Cd m 8 0 10 20 30 Voltage V 4 3B 1 9 3B 1 9 4 10 4 EL 3 35
71. 1 OH 0 A B 1 1 3 Q 1 2 OH 5 FR NT T NN 1A 1 1 1
72. 4 70C 5 2 5 2 4 ATAGO REFRECTMETER PAL J 3 30 1 H 65 2 40 60 60 w 1 55 2 wv 50 1 ET 40 2 a 35 96 30 50 70 90 g 1 70 A B 60 B C D E 9 H x A 65 sa 9 8 8 bb 1 60 80 100 g 2 oo 3
73. 4CH CH3 CH1 8 2 gt 30 0 3t 2 t 10mm 3mm 9
74. JIS Z 2248 5 SS400 10mm 3CH 250 Lg 5 2 6
75. 2 HPLC ESI MS GC MS 3 3 1 2 2mg g gt 0 8mg g gt 0 3mg g gt 0 2mg g 1 3 2 2 2 RI CSL A NE RSE 4 8 3 1 1 HPLC ESI MS 712 54 M 1 744 53 M 1 2 3
76. 20 1200rpm 20 C 6Orpm 6OOrpm 3 4 1 18 8 1
77. 5 6 7 8 2 a b 1 1
78. C 24 2 2 NV dl d T80 92 0 2O Silicagel 70 F Plate wako capillary GC 100mg 100mL 2 3 IKA A10 Retsch 2M1 MAB204 AP 20 112S8 DK43 9 PV 231
79. ISSN 1340 5799 WINTEC 2 4 2 1 2 4 2 4 2 4 1 5 1 3 6 1 1
80. enylethyl Bromide Penta methyldiethylenetriamine CuBr 1 20 ReNerafriea PL jh i A P2 P6 P5 CzMS
81. l 4 0 2 NH4 2SO4 0 2 NH4CI 0 2 CSL 1 rice oil 4 2 6ppp 92 Sample Total aflatoxin ppb DI 2 ppb 1 N D Std ND N D N D N D 2 0 NM UU Ww mM 2 6 5 4 26
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