水素終端Si（001）上におけるCoSi2のエピタキシャル成長
Contents
1. 0000 2 1 6 0 000000000000000000000000006060 Xs 000000000 92 X0 Pm es b es xD D D upnaggugnagggupa 2 2 0 0000 2 2 6 0 00000000000000000 00000006060 02. 0 0 00 Scale Integrated circuit 1800 Metal Oxide Semiconductor Field Effect Transistor 0 0 00 00 0 00 001810 000000000000 00000 000 0 1 9000000 10000000000 0000000000 0000 Schottky contact 00000000 00 ohmic 0000 151 11
3. 1 10 O inm UUU 412 00 0000 0 0 30 0000000 9000000000 0 4 11 Si 2p intensity 3 222 aca Poo S i e e 104 102 100 98 96 94 binding energy eV 412 SiO 0000 S 2 d 20 0000000
4. 0000 silicide silicide Si P ESI a b uri 000 00000000 5 080000000000 000 000000060 00000000600 0000 20 shallow junction O 0 0 0 1 1 6 0 0000000000000000060 151 0
5. 5 0 0000000 00000000000000 51510000 0 0 0 000 51 0 0 000 151 0 000 0 00 0 5 0
6. 8 5 0 8 0 0 00 RBS channeling RBS channeling C esas ut tutt 1 2 3 4 5 6 7 8 9 He 0 gag
7. 0 5 00000000000000 20000 SUPPLY 000 000 100
8. 0000000000000 00000000000 0 0 0 0000 0000 108 109 umgagagumgmuuausuumuauluHudubluHdaltuuuilultlutLutiul 0000000000 610 0 Rutherford Backscattering Spectrometry RBS
9. uuum 0000 dV Q dx Ux 00000 AE C dx 2 dx 000 000000 V E UY d p E E 0 0 2 y DE E 12 x 2d gt V V V Vosy adv qi x 0000 _ EV qN 0 0 0 uu 1510 00000 n 0000 0 D 00 00
10. 20 00000 81 001 5 0000 0000000000000000 000000 33830 540010 80 00000000000000000000 0 00000 2 1 ugugamgaggaguug 0 000000000 0000 00000 050 00000000000000 HEU LU LL 2 1000000000 qmonohydride phase 0 3 3 4 0 000 6 20 Sakurai 0 000000 00000000 1 10000000000 0 3 3 0 0 Chabal Raghavachari 0 0 0 87 838x1000 000000 1000 3 30 0 0 0 00 05 5151000 0000000000000000 90000000000 000000 1995 00 1 20 H Si 001 1x 10 00000 3 490 090 000000 0000600 Symmetric d
11. elgned random 440 00000000000 lt 110 gt 0 10 000000 random 000000 00000000 haned 2 channel particleS 0000 channelingeffeceo axial 2 0 0 00000000000000000 planar channeling 0 0 ugmgaagaggmuuausuumuagusuuudguluHdaltuiutiulltlutLutiul 0DO0000000000000000000000000000000000 00000000000000 EL
12. RBS 00 0 000 888 200 5 909 0 000 RBSO000000000 0 0 0 Dkinematie factot O 0 D 0 020 uaugu audututtutelututlutLl a kinematic factor K 9 kinematic factor 0000 000000000000 0 000 0000000 Een BB D D U 0000 20000 20000000 7000000 9 00000 9000000000000 Bap _ Mn dS 2 2 2 u uu ulullll M
13. XI 10 191 20 30 0 00 308 000 00000000 00 41 ON 2291 241 MAINS ON COOLING 000000 1 COOLING COOLING 000000 1 COOLING ON 00 1 10 wb0 00000000000000 010 mb0 1 STAND 000000000 STAND VSW 2000 POWERD ON SUPPLY ON XPS Measurement 500 End 15000 Step 1 0000 Seans 10 Dwell 0 100 E Pass 20 000 Excitation 1486 60 Work FD 4 5000 1 Configure D 1 H1 U D LU Source Counter 1 1 mode Mag High Exit 1 Alt Y 0 O0 O counts s O O O 0 9 0 00000 0 000000 00000000 STAND 000000 8000000006000 l l F8 Save 0000000000000000 125 l Ctrl F10 gt Ctr CO0000 Windows 1 L1 E E U LU
14. 0 00 surface relaxation surface reconstruction 0 0 0 0000000 900000 000000000000 51 000000 Si 00D 5400110 000500000000 3 2 220 1 0 0 0 0 0000 510001 2 10 0000000000 0 3 2 0 0 5100010000000 Si 001 2x 3 2 0 3 2 1x 1 b 2x 1 c 2x 1 3 2 810010000 a 1x 1 ideal surface b 2x 1 symmetric c 2x 1 canted 0000000 5 0012 00000000 9100000 000000000000 51 0001 2 1 000000000000 00000000000000
15. 0 ODO0000000000000000000000000000 00 00000 000 9 000000 6 1057 0 0 000000000 420000 0900 0000 000 Co Si 1 2 0 000 20000 0 0 0 0 0 0512 51 paggynugnaguggaggugnaguggnagggadgggaggadagadu 0000000000000 XPS 91 00000 200 00 000 0000 0000 0000 000 00 2 00000000000000 00000000 RBS 5 00000 886
16. 0 21 0 0 0 00000000000 0000000000 90 0000 505 0090 0 0 0 400 Q 000000000 HSi 00D clean Si 001 0 00000 TEM 0000000 5 0000 5105 0000 0 00 0 00 2 0 0000 3002 500901 300 0000 520000 810 810001 0 0 0000 800 91 0010 00 0 0000000 500 20 000000 51 0000 00000000 8 00 622m0 0000 580901 30 Gn situ 00000000 5 30 512 0 corelevel 00 000000 Si 2200 Counts 2MeV He R 10 Co H S1 001 A 500 C 30min i m mm
17. 5 5 Co H Si 001 0 0 650 91100 000000 0 0000000 0 56 4 CoSis Si R T 1100 b 57 0000000000 CoSis 2MeV R lt 001 gt 1 sub 80 5 4 E Co 4 _ 2 5 1 1 13 8 1 27 LJ 1 0 _ 500 600 100 800 900 Channel No Counts Channel 500 600 100 800 9 Channel No 5 8 5800130 RBS channelineg 0 000 5nmCo H 8 1 001 1 7nmCo H Si 001 5 uuu ceututututlili5nm 9 5nm 1 7nm gt 3 2nm 00000 Cet 00 3am DU 0 7 0 B 7 7 7I 7 O D 7E 7E U 000 200 Cosi 000000000000000 Ced p QI 3am 00000 0 0 CoSis 00 00000 snggggHgugumsguuuguggggagaamnuuuguguuu 20 8 120 000 8 910006000 00000000 6000 Nis 0000000000000006060 00000000 90 81 0000 0000
18. 0 0 12100 000000 3900 2 1000 00000000000 1 0000 100 170 20 605 1 180 00000 1 1 ON 1 0000 X0 10070 17041 60 5 00000000 180 00000 1 1 1 1 1 000 000000000000000 000 0 OFFO ON
19. 0000 1 G W Trucks Raghavachari S Higashi and Y J Chabal Phys Rev Lett 65 504 1990 2 000000 25 559 1990 3 Sakurai and H D Hagstrum Phys Rev B14 1593 1976 4 Y J Chabal and Raghavachari Phys Rev Lett 54 1055 1985 5 Y Morita and Tokumoto Appl Phys Lett 67 2654 1995 6 Y Morita and H Tokumoto J Vac Sci Technol A14 854 1996 7 J E Northrup Phys Rev B44 1419 1991 8 K Tagami and M Tsukada Surf Sci 400 383 1998 9 0000000 69 15 2000 000 0000 0 TEMDIRBSPXPS D DU 0 507 0 0 0 00000000 h h Aure ll et p mv 000000 NE 6 6107 2m
20. SiON BSU METRIA 0000000 20 0000 6 000 21 40 eJ 210000 2 2 000000000000 00 00 000000000000 work function ys 00 0 0 00 electron affinity 20000000000 0 000000 xi 0000 000000000000 e 000000 000 000 6 000 22 40 eJ x DU D 000 2 2100000
21. 0 00 0 0 00 0001510 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 H Foll P S Ho and K N Tu Philos Mag A45 31 1982 M Lawrence A Dass David B Fraser and Chih Shih Appl Phys Lett 58 1308 1991 T Tung Appl Phys Lett 68 3461 1996 H S Rhee T W Jang and B T Ahn Appl Phys Lett 74 1003 1999 G S Higashi Y J Chabal G W Trucks and Krishnan Raghvachari Appl Phys Lett 56 656 1990 Hirose T Saitoh and M Uda Surf Sci 433 435 581 1999 K Fukutani H Iwai Y Murata and H Yamashita Phys Rev B59 13020 1999 K Hirose A Hanta and M Uda Appl Surf Sci 162 163 25 2000 Palasantzas J De Nijs and L J Geerligs J Appl Phys 85 1907 1999 B Voigtlander V Scheuch and H P Bonzel Surf Sci 372 71 1997 M Copel and R M Tromp Appl Phys Lett 65 3102 1994 G Palasantzas B J De Nijs and L J Geerligd Surf Sci 412 413 509 1998 Prabhakaran Sumitomo and T Ogino Appl Phys Lett 68 1241 1990 L C Feldman and J W Mayer g FUNDAMENTALS OF SURFACE AND THIN FILM ANALYSIS North Holland 1986 000000 4 157 1983 000
22. AE 0 00000000 000 0000 ax Ei 180 01 6 48 0 0000 0 _ d X e Ax 420000 00000 000 00 0 00 4 0000 umm 0 2 amp x cos 1 00000 BE dx E E dx E KE e 9 dx 080 SCC 050 V dx AE 1510 500006000 dE 1 dE V dx cos0 0000 0 0 0 0000000
23. 0 E hv bonding 0 0000 a 000000 E p OG Es O O Ei a sample b spectrum 410 0 0 0000000000000 00 kinetic 4n 0 0 work funcion 00 O 4100 000000000000000006060 00000000000000000 80000600 X 0 0 0000000000000 000 0 0 0 0000000
24. 000000000 151 0000 80000 000 8 00 2 CoSi 000000000000000 1 3amr 0 n 0 000 0000
25. 0 1 3 00000000 0 0 Co sg 700 000 850901 Cosi b CoSi CosSi ICoSi SvCoSi 0 00000000 0 0 0 0 0 0 550 1 000000 1 30 000000 0 1400 19000000 00000000 1 2 0000 0 ugugaagagumgmuuausuumuauluHudubluHudaiuuitultlutLutiul 0 5111020 000000000000 90000000 0510001200000 0000000 000000000000000000000000000 0 00 00000 y 51 001 0 0 Cosi Q 00000000000000 eesijsin 00000 50 0 0 550 00 0 0000000000 000 820 0000000000000 8 00000000 1
26. 0 SUPPLY OFF 0 0 0 VSW 20000 OFF HV UD LU 000x000 STAND 1000000 000 COOLING COOLING D D D B D 0 0 OFF TSCHED 000 VSW 20000 SUPPLY O OFFYI 0 0 0 Beam voltage 0 O OFFO Emission p eH Hc HD BB D D B D D Power ON 000 Emission O0 0000000000 0 Emission 25mA LI 1 U 000 2 1051 5 105mb 020 D 000 Beam voltage 1 0 I D 0 Beam voltage ON 000 Beam voltage OFF 000 00000000000000 OFF 0000000000 ON
27. 00 ODO00000000000 00000000000000000000000 6 00000000000 600 00 0000 45 00000000000000 00 0 1000 000 00000000 Xs 00000000 0 0200000 yu0000000000000000000000000 0 45 0000 20 200000000000 210 000000000800 00000 00000000600 4000 000 00000 00000 00 9 259 46 2900 20 0 000000000 680000000000000 B 0 27 tan 2 2 2E p 0 r p dtan 2 46 0000000000000 2
28. 00000000 0 3 50 8 1 90 0 0000 5 0 0 0000050000 3 1 6 00 000 5 Si Si 51 918 00000000000 0 3 1 4 0 510 963 200 Sr 0 0 3 16 0 50 s0000 0 00000 0 05 0 Sisi 000000 000 0000000000000 H H NL 5 H UN NA Si Si Si Si Si Si ZIN ZIN ZINS ZIN F d TE HF NA HF 51 H 51 Si Si Si Si Si Si ZIN ZIN ZIN ZIN ZIN ZIN e F F F Si HF H H H Si Si Si ZIN ZIN 031 0 0 0000 surffaceo 0000000000000 0000000000000 0 anging 0 0000000000000
29. 0 00000000000 41 X00000 041 ul Width at Maximum 5 0 0000000 Concentric Hemispherical Analyser O O O O O Cylindrical Mirror 1 0000000 000000000000000 0000000000 0200000 CRR Constant Retarding Ratio 0000 FRR Fixed Retarding CAT Constant Analyzer Transmission FAT Fixed Analyzer Transmission 000000000000000
30. 000 00000000000000 181 000 00000 amp 50 000000000000 50000000800 00000 selfaligned siliidd HEB 0200000000000 9108000000000 8100000000 1 90 0000000000000000060 0 00000000 1000
31. 5100 0 000 00000000 0 0000 0 Si 00000000000 0 0 00 751 10 20 PQ 460 0 0000 0000000000 0 0 0 000000 5 91000 0000000 000 5
32. 2000000 80 00000 1590 460 q 0000000 0 0 0 0 200 5 0 0000000000000 2 20 0000000000 80 0 0 S000000 00 0000 unapngadggadgeessg 100 Umm 0 0 uu 151 0 000 00 8100 50 510000 00000 8 8 5 0 gs D 000 00000 0000000 56 311 1987
33. AES XPS 0 0 0 5 0 RBSUD I du ttu 00 BB 00001 0000000 x o 0 annm OOND 042 0000 0000 6 100 000000000 120000 100 00600 RHEED RBS channeling XRD TEM 00000000000000000 ORBS channeling LU U LH U D D
34. 5100120 00 00 8 0 0 000000060 Epitaxial Growth of H Terminated Si 001 Surface 0 uuu ul D 000 0000 00 0000000 0 1 12 1000000 5000000 siiedes 00000000000000 0000000051120 000 91000100000 5 0 1100000000000 91000100 0800000000 5 0 910000 100 0 TIME Ti Interlayer Mediated Epitaxy 2000000 thin 81050 OME Oxide Mediated pure 00000 000000000000 000000 50 000 0 00000 0 000 0 0 0 000 0 0 0 000 0 5001 0 Cosi 0000 9100020 000000000000 0000 Cesiysin 000000 00000 2 0000 84 0010 0000 0 0 0800000000 000000 810 51 0 p 000 89 510 Oclean Si 800000000 MBE Molecular Beam 0 00000000 tcesit 00000 0 Transmission Electron RBS
35. uggagagagd 950000000000 00000 000000000000 0 000 5 20 51 5 91 0 60000000 2460111 000000000 8 000000000 460 01 878 8 000000 H 00000000 0000000000000 000000600 CoSis CeSis 0600000000000 D 7 O 000000 000 000000000 8 Coso b Cosi 0 UuguJumumuuuuiuuuuguuggdgagagsuuusBiiubutuumutututLut Ni 2MeV gt 0 0913 gt gt gt 5 364 b in CoSis 59 2 l exp 0000 0 0 0 00 0 190 D 0
36. lt 001 gt 0 000 910000006060 0 0 2 R 228 0 00000000 15 Coin 0 1 d 2 49 110 28 x 14 4 x 2 49 1 2 0 0896 0 5 9 1 10 0 00 D 2MeV d 5 364 001 R 12 27 14 4 5 364 1 2 0 0913 5 90 2 10 0000 Nig 0 00000000000 1900 2 8atems row cosi CaF 0 0000000000000000 5 364 0 0 0 2atoms ML 0 695 x10 atoms cm 5 364 x107 5 809 0 0 co 0000 383x105atoms em 00000000 1 78 1 724 7 24 0 0000000000000 177m 000 3 270 1 0 000000000 724nm CoSisD 0000000000 0000000 280000000000000 0 0 0 81 7 2411 0
37. enpn nnnn nn ennnun D UU 49 RBS I 1 googol e000 20 0000000 State Detector 5500 0 0 170 0000 02000 00000 0 00 0000 12 20 0000 0 0 0 0 0 X B X ray Photoelectron Spectroscopy XPS 0 Electron Spectroscopy for Chemical Analysis 5 0 0 0 0 m
38. 000 1991 00000 000 00000000000 90000 1994 J Tesmer Nastasi J C Barbour J Maggiore and J W HANDBOOK OF MODERN ION BEAM MATERIALS ANALYSIS Materials Research Society 1995 00000 000000 22 431 200100 220000000 00000000 2 07 7 2002 L C Feldman and J W FUNDAMENTALS OF SURFACE AND THIN FILM ANALYSIS North Holland 1986 00 00000 000 agg 00000000 00000000 000 000000 1995 000000 4157 1983 00000 00000 ag 000000000000 x 0000000 000 1998 Hirose T Saitoh Hanta and M Uda Surf Sci 433 435 581 1999 000 1 0000 8640010 0 00000000000000000 400 1 000 5 000 0 0 460 000000000 cesis Cosi 0 0 St 00000000000000 0 0 0000 00000000000 Si 000000000 1 2 0 0 0 0 0 00 00 0 5 112 0 0800000 91000100 0 000 0 100000000000 20000000000 000
39. 0 510 M g MeV ION o E2 0 41 9 My kinematic factor K 2 E M cos0 M 20 E M M 6 00000 42 00000 500000 05000 0080000000000 000 90 00000000 00000 000000 10 9 dp dp d2 I Pd os0 do differential scattering cross 1 0 1 p E Utt Gmpact 000000 60 0000 ed 000000 t 0 90 000 202200000 P sinO 42 00000 uggagggaggaggaugauag y2 1 do ae 09 jue dQ uw xf 4E 00000060 0000000 000000 4
40. 00000 000000 5 0 000000000 000000000 Molecular Beam Epitaxy MBEX I 0000000000 0 0000000000000 000 00 0000000 CosSi 0 0 000 0Cco Si0 000 0 TEMORBSOXPSOCoSi O0 0 0 RBS channeling O0 0000000000000 000000 RBS 1111 paggadg uHeggggagggdgzwmevuignupna agunaau immi 0000 100 170 000000000000000 0000 0012 0000 20 n 0000 5 10707 1 1486 6eV AIK 0 0 0000 0 0 0 Cen pg rg 8120 5 10 91 001 0 0 20 1 0 000000000 580901 0 0 9100000000 0 dern 0000 10000000000 00 00000 0 90000 _ 90000 2400 Co 2400 qe lt gt Sab e P _ Sisub lt 3 1900 utet i E S a e 72 60r Ya t 1
41. 0 0 0 0000000 CoSi 0 0000 S 2 0000000000000 412 0000 54 001 0 0 000000000000000 2p 0000000000 22 0 820 0000000 8000 00000 cosi 0000 0 0 0 00000 41300000000 00000000600 000 00000000 Ultra High 000000000000 itanium Sublimation Pump TSP O 0 0000 000 XD AIK a TMP X RP 4 13 ugugagagumaumauuuiuiutiiuuliliuiuliutiuiuutuiuiuliuiiullll 0 150 00000 10 Torr H DH B HH B E U E U 0 b xPSso0 0000 X000 X X Ray Diffraction XRD m 00 ev Mic cete
42. 520 0000000 00 lt 17120 0000 50000 000 0 00000000 2000 0000 si 00000 0000 0 00000000000000000 0 5 60 cosi 91 005000000000 9 4 108 1 Sig 2 3 109K9D 1 D DL 0000 1100200 cesi 0 810 000000000 000 1 2 0 00000 05108 0000006060 00000000000000 000000000 00000000 0 5 20 0 0 0 00 0 0 5 80 51 0001 0 0 C5nm 1 7nm p 580901 30000 0 RBS channeling 0000 0000 100 0000 0 0010 0000000000 00000 92 51 6 1 7nmCo 1 7 000000000000 silicide Si HB L HU B D B 000 71mm RBS channeling ex situ 51 00 0 Xm 0000000
43. 0 1 RD LO asl 800 400 5007 700 Channel No Channel No 51 5 4 00000 Esi 0 E 60 factor 0 0 0 0 0 D U D E 000000 00000000000 00000000000000000 0 Mey 0 0000000000000 025108 0000 0000 AE At 00000000000000 000 0000 At S H 000050 260 27 2 S H 00000000 000 00000000 1015atoms cm Zoo gs 2 Za Tes 2 1015 2 09000 090 0 5 0 00000000 2 _ LO atoms cm ie 050 D D koena E 920 0000000000 0 5 10 00 00091000600 000000000 10000000000 xD uult 35 50 np 00080
44. 1 K Ishida Y Miura K Hirose T Narusawa and S Harada To appear in Appl Phys Lett Mar 24 2003 Issue 2 0000 0000 00000 00000 000 0000 20030 10 240 iii 000 0 0 0 0 000000000000 0 0 00000 0 0 0 0 0 0 00000000 0 0 0 0 OUUU 000 00000000000 0 0 0000 0 0 00000 0 0 0 0 0 0000000000000000 0 0 0 00010 0 0 DELE 00000 0 0 0000 Si 001 H Si 001 0 0 0000000000000 0 0 000 0 0 0 0 0 0 000 0000 0 0 000000 0 0 0 0 0 0 00010 0 0 00000000000 RBS 0 0 0 0 0 0 0 0 0 0000000 0 0 0 0 0 0 0 0 0 0 0 0000000 0 0 0 0000000 0 0 0 00000 0 0 000000000 0 0 0 0 0000 0 0 0000 0 0 0000 0 0 0 000 00 820 0 0 0 0 0 0 8 000 8 1 000000000 0 0 0 1 0 0 0 0 EJ E3 E3 EJ L1 1 1 1 2 1 3 1 4 1 5 2 1 2 2 2 3 8 1 8 2 3 3 3 4 4 1 4 2 4 3 4 4 4 5 4 6 4 7 4 8 4 9 4 10 4 11 4 12 4 13 5 1 5 2 5 3
45. 1 3 400901 100000 0 54000 000 84 001 0 0 5640010 0000 5 4 0 61 0010 lt 111 gt 0000 0 ees 000000000000 000 540 540000 0 0 400 10 Si 81 001 b Co H S1 001 5 4 40001 100000000000 XPSO 00 5 001 0 000000 000 00000 51000100 0 520 540000 0 0 Col 810001 0 0 1 2 0 650901 10000000 2500 0 000000000 RHEED 5100000 520 n D D 50000
46. 0000 1400 Co 0 0 0 22 20 0 0 00 8880 000 51 0200000 885 E e pm O O O AG Cw 42 52 C O QE 001 a b 5 10 1 7nmCo H Si 00D 511 000000 000000000 0 8 0000 000000000 0 5100 000000 0 1 0 3 000 000 00 Cnterstitial atom 5 11 0 000000 0 5 110 0 0000000000 00000000000000000 0 0 uu uu 000 00000 000 01510 0 0 0000000000 00000 28100000000000000 St 5 910 510 1510000 00000 91 0 0 00 00 Cosi 510 00000 etal rich 00000000000000
47. 5100010 0 000000000000 00 Cosis S DH BH HH D D U DI D 2000 0 000000000000000 0 0000000 550 0 Cop Si 50000 000000000 5 0 000 0 0 0 910000 TIME Ti Interlayer Mediated Epitaxy thin 6 00 Mediated Epitaxy pure Co D0000000000000 910000000 910 pure ecp eg 91 00000 000000 000 00000 80 00 0000 8 0 00000000000 000 000000000 000000 00009 000000000 90 460 9 0000000 90 8 0 0 0 0 00000000000 0000000000 220 000000 200000000000 0 000 000000000 Sig 0000 irichi 0000 0 0 000 51000120 0 5 0 0000000000000000000000006060 000 0000 81000 0020 10
48. 2 3 4 5 6 7 8 9 10 11 12 18 14 15 16 17 18 19 20 21 22 Ottaviani J Vac Sci Technol 16 1112 1979 00000 00000 000 FUJITSU 50 247 1999 http magazine fujitsu com vol50 4 paper14 pdf 0000 00000000 61 103 1992 S Saitoh Ishiwara T Asano and S Furukawa Jpn J Appl Phys 20 1649 1981 00 000 1 0 0000 00 1986 S S Lau J W Mayer and J Appl Phys 49 4005 1978 5 Saitoh H Ishiwara T Asano and 5 Furukawa Jpn J Appl Phys 20 1649 1981 Ishiwara T Asano and S Furukawa J Vac Sci Technol B1 266 1983 H Foll P S Ho and K N Philos Mag A45 31 1982 K Ishibashi and 5 Furukawa IEEE Trans Electron Devices ED 33 322 1986 M Lawrence A Dass David B Fraser and Chih Shih Wei Appl Phys Lett 58 1308 1991 T Appl Phys Lett 68 3461 1996 H S Rhee T W Jang and B T Ahn Appl Phys Lett 74 1003 1999 S Higashi Y J Chabal W Trucks and Krishnan Raghvachari Appl Phys Lett 56 656 1990 Hirose T Saitoh and M Uda Surf Sci 433 435 581 1999 K Fukutani H Iwai Y Murata and H Yamashita Phys Rev B59 13020 1999 Hirose A Hanta and M Uda Appl Surf Sci 162 163 25 2000 G Palasantzas B Ilge J De Nijs and L J Geerligs J Ap
49. wm m mm N Co SiO2 Si 001 300 C 30min 500 550 750 Channel No 5 2 8 000 Co SiOsSi 00D RBS H1 Q1 L1 CH 00000 0 0 500901 300000 800 T T T Si 2p gt 2p intensity intensity E ce 1 P 4 d 2 s pe A om v 7 22 x Proof 05 8102 8 001 SiO Si 001 2 1 1 1 1 L L 104 102 100 98 96 94 800 790 780 770 binding energyleV binding energy eV 5 3 2nmCo H Si 00D 2nmCo SiOs 8i 001 0 0 0 580901 Si2p Co 2 core level 0 0000 778 5eV00000000000000000000000 00000 2 level 778 7 0 2eVO00 00000000 51025 0000 0 0 0 0 0 84 0010 00 0 00 0 C e2pbr n dag 000000 2 Si 2p 0 0 0 0 0 2 5 2p 1 0000 9 5 5102 5 0010 4 6 5 0090 60 0 00 0000 000 0000000000000000 000 5 0000 0 8 0020 0800000 900 H 0000 0 0 000000 0 b H Si 00D clean Si 00D 000
50. 00 E poro 210000 021 q Vp V V 6 00000 023 u g 0 0 0 0000000000000000 00000 000000 0000 9000 2 3 0 0 0 2 2860000 V 0 000000000
51. 5 4 5 5 0 0 00000000 000000000 0000 001000000 00010000000000 eo 000210000000000 eo 000000000 Si 00DD 000 H Si 00DD 0 0 0 H Si 001 1x 1 dihydride 000000000 00000 000000000 e Rr Lu RBS 0 00000000000000000 120 000 80000 510 CoSis 0000 8i 2 00000000000 XPS I Hl U D L RBS UU LL Co H Si 00D Co SiOs Si 00D RBS H1 E H1 Hd 2nmCo H Si 00D 2nmCo SiOy Si 000 0 0 0 580901 30000 S 2p Co 2 core evel 1000 400 1000000000000 Co H Si 001 0 0 0 650 020 000000 n D 00000 vi 5 6 5 7 5 8 5 9 5 10 5 11 1 1 1 2 1 3 2 1 4 1 4 2 CoSis 0000000 5809021 30000000000 RBS channeling I LH LU U 1 7nmCo H Si 00D D 00000 000 00 O00000 1000 1810 0000 15
52. 2 91 100 70 15 20 50 55 2200 0 65 N 18 20 1326 012 0000000000 09000000000000000 0 0000000000 090000000000 000 000000000 CM0000OOCOCOOOOOCOOOO00O0O00000000000 0 000 0 Au Ag 0000000000000000000000151 00 Mor WE Ti 1 0 7 7B 7 U U U refractory metaD near noble o B0 0 0 D 0000 120000000000 20 181000000000 00000 100000 15120 00000 0000000 0 60 704 0 49000 00 5 20 54 0 0000000000 000000000000 000000 200 000000 00000 80 00000000 0 185 00000000000000 00 00 00 01517 000 000000000000000000 0 Solid Phase Epitaxy SPEI 0 Si Molec
53. 1 E _ keV 1 0x10 12 5 0 0 0 0000 000000000 gt 00000 gt 0000000 gt 000000 000000000000 gt 6885 gt 0000000 0000 X000 PIXE 57 5 gt 00000 amp P9 000 gt X0 x000 RD 0000000000 0000000 uggaggguggugaggagugugagudauaeattudtte uet ttu
54. 2mX 2x94x10 x 10x10 0000 0000 00000 000 0 000 00 0 0 0 00 0 0 0000 0 Low Energy Electron Diffraction LEEDO 0000000000 2000000 Reflection High Energy Electron Diffraction RHEEDJ 4000000 1 3MeV 149 ev 2 000 02 000000 00 000 Gnelastic E hv h 0 10 0
55. 77 4 0 dr dp 00 0 2 o0000000000000000000000000000000000 00 020 f 0 f r 0 lt mg E r R 0000000 000000000000 1000000000 0 00 00000 20 4 7 0 00 0007 0000 0 EDEERE ELELEE ELO EEEE EHE HEEL 00 ugugaagagmumuuausuumuauluHudubuHuduatituuuiulultlutLuiul Z 2 R 2224 a b 47 000000000 2 00000000000 LU 00 4600006000 or tL 02 0 td 2 00 0 90 I I I t p HP ff
56. CHP R R as 2 2 n 48 20 gt Bn 0 5 1 0 p 48 2 0000 1000000000 200000000 4 6 00000000 uggagagggaaggagaguggaagagauguggguldeattueletttltlutt 46 20000000 random case aligned case random case 00 000000 000 minimum yield O O OX min pagga gaugggagpnggpnaug 00 000 0 00 00000 00 0000000000 0000000000000 0 0 0 00000 04900000000 885 00 LOOL 0000000 000
57. 0 5100000 00000000 8 0000000000000 0000 510000 000 5 000 1 0000 0 0 5 00000000 00 0 51 0 OME 00001510 1 H Foll P S Ho and K N Tu Philos Mag A45 31 1982 2 M Lawrence A Dass David B Fraser and Chih Shih Wei Appl Phys Lett 58 1308 1991 3 R T Tung Appl Phys Lett 68 3461 1990 4 H S Rhee T W Jang and B T Ahn Appl Phys Lett 74 1003 1999 LU mulu 1 0000 510000 0000 O 400000 20020 80000000 2 5 0000 00000000 0000 0000 00000 00000 2000000000 20020 100060600
58. 000 0 000 ug 00000 00000 1980 2 00 00000 000 1910 000 0 000 1986 3 00 0000 00000 00000 00000 00 00070 00000 00000 1997 4 00000 00000 00 000 00000000 0000 1979 000 00000 51 0000006000 00000 00 0000 0000000000 00000000000 9 000 H 1 1 5 001 0 0 8800100 54 001 0 HSE 000 0 0 500000 9000 310 0000000 20 3 10 1 0854001 2400 2 00 00
59. 48 0000 CoSi 51 00 00 5 000 00000000 61 0 50000 00000 0 0 0 0 5 0 000 0 nn TIME Ti Interlayer Mediated Epitaxy 20 00000 thin 8 00 OME Oxide Mediated Epitaxy 120 pure 0000000000000 amp Tip 5040 pure CO 0000000 eg 900000 000 00000 80 00 0000 8 000000000000 2000 0 ___ w _ Cosi Cobie 5367 550 1826 0 1 8 Si r4 0 0000 o e e o o 51 0 r5 0010 00000 VA 50
60. 8100000 00000000 50 00000000000 50 510000 00000 00 0 00 0 6 0051000 0000000 RBS channeling RBS channeling 0 00000000000006060 uUum RBS channeingB O n DD SD 000008080 0000000 0 5100000 cesivsi 0 Cosi 0 0 0 O00000 1810
61. Rutherford Backscattering Spectrometry XPS X ray Photoelectron Spectroscopy CoSis 0 0 0 RHEED Reflection High Energy Electron Diffraction RBS channeling 1 0000000 3 0000000000000 300 500 0 00 5102 51 000000 910 951 300 C 510 0 0500 000000000 300 C 5 000000 400 0 0 Co SiQD 0 0 510 51 51 lt 111 gt 910000 0 40041 0 00000 cesi 500100 cou 65 RBS channeling 000000000 000 2500 71 7nm n 0 0 Cen BB BB HD D 9251 5120 000000000000 shiadesi 4 0O 5100100 00000000000 0CoSi0
62. ihydride phase 000000000000000 2x1 b 1x 1 3x1 3 3 H Si 00D 0 0 0 2x 1 monohydride b 1x 1 dihydride c 3x 1 monohydride plus dihydride b XX 3 4 H Si 00D1x 1 dihydride a symmetric b canted c domain 0000 0 000 000000000 00000000 Canted dihydride phase 00000000000 7000 810020 000000000 000 ezuttauttu 00006060 SH 0000000000000
63. pl Phys 85 1907 1999 B Voigtlander V Scheuch and H P Bonzel Surf Sci 372 71 1997 M Copel and R M Tromp Appl Phys Lett 65 3102 1994 Palasantzas J De Nijs and L J Geerligd Surf Sci 412 413 509 1998 000 00000000000 0 00 0 6 Uum 0 0 0000 potential barrier Schottky barrie 0 0 0 00000 Schottky barrier height 5 0 151 0000000000 00 0 00 surface
64. ular Beam Epitaxy 0000 0 0 0 0 0 0 5 0000000000000000000 00 20 0 0 05 NBDOBOUDONE 50000 2300 10 O00000 NeSUT DB B D D 0 D DO U UI 0000 50 0 0 0 0 1 90 6 000 0 25108 000 si
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