User Manual
Contents
1. 1 0 TilDiode _Ave oe A0 sC TiDiode _Max duty for chopper d Tefunder the chip 93 50 SC Just under the chip OF ne Tf heatsink temperature 0 ton toff P F cose duty ton ton toff Note Rg input is not available for IPM and duty input is only available for chopper calculation 5 13 3 Range of input data The range may be different for different modules The following table shows a typical instance of a standard module An input beyond the defined range will generate an alarm message Output current however the calculation will still be carried out The current value can be selected to input either in peak value or rms value The peak value means the peak value of a sinusoidal current or the peak value of a DC current Ripple component is not included An input exceeding the recommended VCC of the module will VCC DC link voltage generate an alarm message however the calculation will still be carried out VCC lt 400V for 600V modules VCC lt 800V for 1200V modules VCC lt 1100V for 1700V modules INote some modules may have a different range setting Carrier frequency An input exceeding 20kHz will generate an alarm message however the calculation will still be carried out Note some modules may have a different range setting Output frequency Input is only available for modulation of 3 Armand 2 Am An input under 0 1Hz will generate an alarm message Note some modules may h2. Diode _Max E Ti IGBT _Ave B C THIGBT Max Modulation Ratio 3 u i Tj Diode _Ave f C Ti Diode _ Max E EEN Te under the chip Tf E SC Just under the chip 1 Tool Bar Open a new window A new condition window will open Parallel simulation becomes possible Select the active condition window from the menu bar windows Module Select the target module Module Select Division EEE Series MINI DIP IPM Ver A EZ Module poires Module types and data are subject to update without pre notification Please make confirmation on our homepage Module selection window will appear even if the Not Selected button is clicked at the target device area of the initial condition window Graph Move to the condition window Condition Calculate Start calculation File Save calculated result In txt csv Tomat Export Conditions and graphs are saved in txt file and csv file respectively Therefore it is possible to edit the data with e g Excel Edit Copy the condition window Copy The data and calculation results window is hard copied and can be pasted to a document such as a word file HA Au Printe condition window or a graph gt Print Print the condition window or a EE Hep ep S SOSO 4 13 2 Condition Window Power loss conditions and results are displayed in the condition window Target Device Shows the target device name Device Data Profile Shows t
3. the latest simulation data is used The software might not work properly if the IE of your OS is not updated Use IE6 SP1 to update Windows2000 High Encryption Pack to update windows2000 Pentium is a registered trademark of Intel Corporation in the U S and or other countries Windows Is a registered trademark of Microsoft Corporation in the U S and or other countries 3 13 3 Operation Guidance When the software starts up a message window pops up showing the number of remaining days for which the software is valid Click OK The software has expired if the date is overdue A Melcosim LossSimulator Target Device Device Data Profile Not Selected Rth j c IGBT o KAW Rth KW Diode lg KW 0 in 1 CINY part Application Conditions Calculation Results Modulation Power Losses Average 3 Arm BCE The valid date remains for 364 days Please confirm the following contents and push OK in order to start the Melcosim program Cautions The product data and algorithm under the Melcosim are information of the day of issue Mitsubishi Electric Gorporation may be change the specification of the program without prior notice This program can t guarantee calculation results for a simple calculation g So Mitsubishi Electric Gorporation does not take the responsibility of the calculation result Raton Delta Tj c IGBT _Ave a Delta Tj c IGBT _Max Raloff Delta Tj c Diode _Ave sc Delta Tj c
4. BT amp Diode Max Current TGBT amp Diode Delta Ti cOGBT amp Delta Tj c Diode Delta Ti cUGBT _Ave amp Delta Tj c Diode _Ave Delta Ti cOGBT Max amp Delta Tj c Diode Max Combination table Output Current Icp A Switching Frequency kHz T IGBT Ave amp Tj Diode Ave Ti IGBT Max amp Tj Diode Max Power IGBT amp Diode Delta_Tj IGBT Ave amp Delta_Tj Diode Ave Delta_Tj IGBT Max amp Delta_Tj Diode Max T IGBT Ave amp Tj Diode Ave Ti IGBT Max amp Tj Diode Max Power IGBT amp Diode Max Current IGBT amp Diode Delta_Tj IGBT Ave amp Delta_Tj Diode Ave Delta_Tj IGBT Max amp Delta_Tj Diode Max T IGBT Ave amp Tj Diode Ave Tj IGBT amp Tj Diode Delta_Tj IGBT Ave amp Delta_Tj Diode Ave Delta_Tj IGBT amp Delta_Tj Diode TGBT Ave amp Ty Diode Ave T IGBT Max amp Tode Max T IGBT amp Ti Diode Power GET amp Diode Max Current TGBT amp Diode Delta Ti cUGBT amp Delta Tj c Diode Delta T cUGBT _Ave amp Delta Tj c Diode _Ave Delta Ti cUGBT Max amp Delta Ti c Diode Max T IGBT Ave amp Tj Diode _ Ave Ti IGBT Max amp Tj Diode Max Power IGBT amp Diode Delta_Tj IGBT Ave amp Delta_Tj Diode Ave Delta_Tj IGBT Max amp Delta_Tj Diode Max T IGBT Ave amp Ti Diode Ave Tj IGBT _Max amp Tj Diode Max Power IGBT amp Diode Max Current IGBT amp Diode Delta_Tj IGBT Ave amp Delta_Tj Diode Ave Delta_Tj IGBT Max a
5. POWER LOSS SIMULATION SOFTWARE User Manual 1 13 1 Main changes with Mitsubishi power module loss simulation Ver 4 03 The power loss simulation software Melcosim Ver 4 03 for Mitsubishi power modules has been revised Details of the revision are shown below 1 Melcosim Ver 4 03 shows SW on and SW off of IGBT Calculation Results Calculation Results Power Losses Average q PUGET E 47 WIDGET DE 117 35 Sie 20 13 PIGET 137 47 WIIGET DC fiza SW ous SEN r l SESCH WEE Wen I PiDiode 12 60 WjDiode DC age SW ez EL Diode 12 60 WiDiode DC a Fu EEE S N PUIGBT 3 174 95 WiModule INV parti PIGET ag Module INV part PiDiode 36 14 WiModule INY parti Ver4 03 FiTotal 1100 14 wiModule INV part I j PrPiode 25 19 WiModule NN part N l EH Ver4 ch 1100 14 Module INY parti 2 The Japanese data sheet or English data sheet can be seen by selecting the button Melcosim LossSimulator1 SS File Edit Module Calculate Graph Display SBS IGBIEFAI Il CM100DY 24NF AUNIAT YFF Bxt sdbs amp sr Target Device CM100DY 24NF _MLOODY Z4HF Japanese English Datasheet Application Conditions I Modulation 3 Arm Standard 2 Arm A of gt Chopper loss per ISBT Diode PEUR RES MSN TES Io 150 0 A peak Orm
6. Total IGBT power loss of one module PiDiode 14 78 WiModule INY part PiTotal 134 53 WiModule INV part n P IGBT W IGBT x chip number romanes Total FWD power loss of one module P Diode W Diode x chip number Delta Tj c IGBT _Ave 6 45 sc Delta Tj c IGBT _Max sc Delta Tj c Diode _Ave 2 39 JS Delta Tj c Diode _ Max l an T ot al p OW er O e e of a m O d u e TIIGBT _Ave 98 17 c TIIGBT _Max a eg u P IGBT W Module P Diode W Module Ti Diode _Ave 194 12 sc TilDiode Max sc Te under the chip 91 73 C Note The power loss per one module is not calculated in chopper operation The temperature rise is calculated based on the following thermal flow chart Tj P IGBT IGBTO P IGBT Diode Rth c IGBT Je lam P Diode Rth c f FWD Rth j c Diode y x chip Tf Ta O a er number A ee ERBE RERE Xx Tfis the Heat sink temperature Temperature rise between junction IGBT amp FWD and case is calculated to be Delta Tj cHIGBT P IGBT Rth j c IGBT 4 96 W 1 3 k W 6 45 C Delta Ti c Diode T P Diode Rth j c Diode 0 80 W 3 0 k W 2 39 C Case temperature is calculated to be Tc Tf P Total Rth f number of switches 90 C 156 04 W Module 0 228 k W 6 91 73 Where P Total is the total loss of one module and Rth c f is the contact thermal resistance of one switch The heat is supposed to distribute across the full modul
7. ance data used for simulations is obtained by linear approximation from several points of measured data Therefore calculation errors occur for Vce sat at low current switching loss near OA etc The calculation results are overestimated under these conditions please consider it as margin In addition if the input parameters are outside of the specified range the error produced from the linear approximation will become large and an exact calculation result cannot be obtained Therefore please input each parameter within its acceptable range If the parameter input is outside of the acceptable range an alarm message will be displayed however the calculation will still continue and the results will be shown Temperature ripple calculation is possible with Ver 4 03 but calculation errors can occur especially with a small sample rate This calculation is possible only under the following conditions 1 Modulation is 3 Arm or 2 Arm and fo is under 30Hz 2 Modulation is Chopper 9 13 2 Temperature Rise Calculation Example PS21765 in 3 phase PWM operation Device Data Profile RG I is KW men Em p Thermal resistance per one switch Diode KW e in Nat Some devices indicate this value as Calculation Results per one module in their spec Power Losses Average P IGBT 14 96 WIIGBT DC i347 SW 1 79 P Diode 0 80 WDiode DC oe sw ou LR LS LL P IGBT 129 75 WiModule INV part ST a gt
8. ave a different range setting Rg on Rg off Gate resistance Input is only available for IGBT modules An input beyond the defined range will generate an alarm message however the calculation will still be carried out The input range is 1S PFS1 PE factor An input beyond the setting range will generate an alarm message The input range is 0 1 for 3 arm 3 phase modulation and O 1 154 ion Reo Ratio Modulation Moca dopin Motion son 2 arm 2 phase modulation An input beyond the setting range will generate an alarm message This Input is only available for chopper calculations with a range of 0 duty Duty 1 Duty is a function of Modulation Ratio in chopper operation Duty Modulation Ratio 2 0 5 An input beyond the setting range will generate an alarm message Input range is the safe operation temperature range or junction Tf Heat sink temperature range of the module temperature An input beyond the setting range will generate an alarm message Keep conditions Keep calculation Keeps calculation conditions except Rg when module is conditions changed Check box in order to keep calculation conditions Alarm message window Melcosim An alarm message also appears when the calculated junction temperature exceeds the specification under acceptable input conditions In addition if the VCC input exceeds the module blocking voltage the calculation will still be carried out however the voltage cannot be applied in ac
9. c 100 0 A Vcc 600 0 Y Tf 90 0 C Rg on 1 60 Ohm Ra off 1 60 Ohm PF 0 8 Mod 1 0 3 Arm 30 Carrier Frequency fc kHz Carrier Frequency fc kHz Mitsubishi Electri E Temperature vs Time curve F Temperature vs Time curve E LossSimulator1 BR LossSimulator1 TJ vs Time for CM200DY 24NF Tj vs Time amp TJ ave vs Time for CM200DY 24NF E g E gZ ZS z KI Pr E gt des VI E 3 Conditions fe 5 0 kHz Vcc 600 0 Y Tf 90 0 C Rgfon 1 60 Ohm Rg off 1 60 Ohm PF 0 8 Mod 1 0 3 Arm 33 33333 Mitsubishi Electri Junction Temperature TC 12 13 Time msec CH CH CH CH oO gt N CO A en o It aay s ngesodwa uonsunf LO co 33 33333 Witt IGBT Tj Diode Tj IGBT Tj ave Diode T ave Conditions fe 5 0 kHz Vcc 600 0 Y Tf 90 0 C Rgfon 1 60 Ohm Rg off 1 60 Ohm PF 08 Mod 1 0 3 Arm ubisin Electr Notice for Safe Designs We are making every effort to improve the quality and reliability of our products However there are possibilities that semiconductor products are damaged or malfunction Please pay attention to take safety into consideration and to adopt redundant fireproof and malfunction proof designs so that the breakdown or malfunction of these products would not cause accidents including human life fire and social damages Notes When Using This Specification This specification is intended as referenc
10. e any questions about this specification Power Device Works Mitsubishi Electric Drawing 13 Jan 05 Revision 02 Mar 09 13 13
11. e in inverter operation Note for chopper operation calculation the case temperature is calculated by Tc Tf P IGBT P Diode Rth c f However there is only one IGBT or one FWD working per one arm in chopper operation therefore the calculated value is larger than the actual temperature rise IGBT FWD junction temperature Tj is obtained b Tj IGBT Tc Delta Tj c IGBT 91 73 C 6 45 C 98 17 C Tj Diode Tc Delta Tj c Diode 91 73 C 2 389 94 12 Note Precaution of MOS module and RC IGBT MOD calculation The diodes of MOSFETs and RC IGBTs are body diodes Power loss and temperature rise for MOSFET and RC IGBT are calculated by following equations MOS_MOD Delta T j c Rth j c P MOS P Diode MOSFETT RC IGBT_ MOD Delta T j c Rth j c P IGBT P Diode IRC IGBTI 10 13 5 Graph Display Function The simulated results can be confirmed simply by using the graphing function Select the graph menu in the menu bar to display a graph Melcosim LossSimulator1 File Edit Module Galculate MEET Display View Window Help K a E Conditions Waveform Select Target Device Data Profile Tj max IGBT loc CM200DY 24NF Select X axis Select Y1 axis Waveform Select Waveform Select Output Current Icpi Switching Frequency kHz Time Select Y2 axis Waveform Select TWIGBT _Ave amp Ti Diode Ave TjIGBT Max amp Tode Max TIIGBT amp Tj Diode Power TG
12. e materials when customers use Mitsubishi Electric semiconductor products Thus we disclaim any warranty for exercise and or use of our intellectual property rights and other proprietary rights regarding the product information described in this specification We assume absolutely no liability in the event of any damage or any infringement of third party s rights arising from the use of product data diagrams tables and application circuit examples described in this specification All data including product data diagrams and tables described in this specification are correct as of the day it was issued and they are subject to change without notice Always verify the latest information of these products with Mitsubishi Electric and its agents before purchase and make confirmation from Mitsubishi Electric web site http vwwu mitsubishielectric co jp semconductors as well The products listed in this specification are not designed to be used with devices or systems which would directly endanger human life Should you intend to use these products for special purposes such as transportation equipment medical instruments aerospace machinery nuclear reactor controllers fuel controllers or submarine repeaters please contact Mitsubishi Electric and its agents Regarding transmission or reproduction of this specification prior written approval of Mitsubishi Electric is required Please contact Mitsubishi Electric and its agents if you hav
13. he thermal resistance of the target device The Rth j c specification is the value per one IGBT switch not per one module Only the IGBT switches in the inverter circuit are counted therefore the number given is 6 even for a 7 in 1 with brake part module Modulation Modulation strategy selection 3 phase PWM modulation for 3 Arm VVVF inverter 2 phase PWM modulation for 2 Arm VVVF inverter Special operation such as chopper control or DC brake is also possible lo condition Inverter operating condition input Calculation Results Click on the tool bar to begin the calculation Wi LossSimulatorl Target Device x Device Data Profile CM100DY 24NF SS SEET en KW Rth c f om GA Japanese English Datasheet j gt int INV part Seal stian Gandtians n Calculation Results e Power Losses Average Modulation 5 P ISBT 37 47 WIIGBT DC 117 35 sw 3 Arm Standard s n i OzAm E SWion 6 82 SW off 13 30 Chopper loss per IGBT Diode PiDiode 12 SS Leer ez Ex sm lava P IGBT 74 95 WiModule INV part PiDiode 125 19 WiModule INY part A See PiTotall 100 14 W Module INY part without Rg Temperature Rises Ralon 3 10 Delta Tj c IGBT _Ave 4 87 e Delta Tj c IGBT _Max Ratoff 3 10 Delta Tj c Diode _ Ave 12 90 sc Delta Tj c Diode Max PF 0 8 TIIGBT _Ave 98 38 C TiIGBT _Max Modulation Ratio
14. mp Delta_Tj Diode Max Ti IGBT Ave amp Tj Diode Ave Tj IGBT amp Tj Diode Delta_Tj IGBT Ave amp Delta_Tj Diode Ave Delta_Tj IGBT amp Delta_Tj Diode Note Tj IGBT amp Tj Diode and Delta_Tj IGBT amp Delta_Tj Diode are possible under following conditions 1 Modulation is 3 Arm or 2 Arm and fo is under 30Hz 2 Modulation is Chopper 11 13 Graph Display A Temperature vs Current curve E LossSimulator1 TJ ave vs Icp for CM200DY 24NF Junction Temperature Ave Tj C ek x IGBT Diode Conditions fc 5 0 kHz Yee 600 0 Y Tf 90 0 C Rg on 1 60 Ohm Ra off 1 60 Ohm PF 08 Mod 1 0 3 Arm B Power Temperature vs Current curve BW LossSimulator P vs lep amp Tj ave vs Icp for CM200DY 24NF CO E CO i Br CO N HL aay s nesodwo uonounr ars CH 9 x IGBT P Diode P IGBT T ave Diode Tj ave Conditions fc 5 0 kHz Ycee 600 0 Y TF 90 0 C Rgion 1 60 Ohm Rg off 1 60 Ohm PF 0 8 Mod 1 0 3 Arm 80 120 160 200 240 280 320 360 400 80 120 160 200 240 280 320 360 400 Peak Inverter Output Current Icp A Milsutiehi loctii Peak Inverter Output Current Icp A TE P vs fc for CM200DY 24NF Power P W X IGBT Diode Conditions Ic 100 04 wec 600 0 Y Tf 90 0 C Rgton 1 60 Ohm Rg off 1 60 Ohm PF 0 8 Mod 1 0 3 Arm X IGBT P Diode P IGBT Icp DiodefIcp Conditions I
15. r operation is calculated with the formulas shown below No ripple component is included The average power loss of the IGBT and FWD at current lo are Puc Ilo x Vce sat Io x Duty Poy Psw Io x fc P IGBT Py Poy for the IGBT and Puc lo x Vec Io x 1 Duty Poy Err Io x fc P Diode Phe Poy for the FWD 8 13 m The following items need to be considered when making power loss and thermal calculations Use the power loss value for the worst case working condition When Tj Max is over 125 C the temperature ripple calculation may be underestimated because all device data is for Tj 125 C Also consider that there is additional margin under conditions that are Tj Aves125 C and Tj_maxs125 C In case of Tj Ave gt 125 C or Tj_max gt 125 C consider adding margin since the temperatures may be underestimated Wi LossS mulator T vs Time amp T ave vs Time for CM200DY 24NF 130 CO Il IGBT T Diode T IGBT T ave Diode ave 127 ba 124 bh E Tj IGBT _Max 121 ha 115 EA co 2 LL aay s nyessdwe uonsunf 115 Conditions fe 16 KHz Wee 600 0 Th 900 C Rgion 1 6 Ohm Falot 1 6 Ohm PF 0 8 Mod 1 0 3 Arm 112 ha 103 es LU 106 Junction Temperature TTC 103 ere CO 100 Time msec EH Limitations of Ver 4 03 power loss simulation software The perform
16. s te MITSUBISHI 2 13 2 Setup and Execution 1 Download The power loss simulation software can be download free from the following Mitsubishi Electric web site lt http www mitsubishichips com Global index html gt 3 MITSUBISHI ELECTRIC SEMICONDUCTOR Microsoft Internet Explorer NE EO RTV BAC YI APE s OU Quer araw Bar A e OHS PELAWD index html Global Mitsubi a Sa Gg P Fouindatinn Prireffir odustion Prize for The_ KS P z TS e CG CEE 7 Click the button after the information table is filled out T Then enter the download page Personal information is strictly managed e and only used for software version update notification The downloaded software is compressed in ZIP format it can be uncompressed with various file decompression tools There are 9 files included in the compressed ZIP file Melcosim exe Function dil Limitinfo dil MFC71 dil msvcp 1 dil msver 1 dil Passinfo dll Simcore dil ReadMe txt Please copy or move the uncompressed files to a local directory in your PC The software may not work from a network hard disk 2 Execution Click the sMelcosim exe icon to start up the simulation software PC type DOS V PC Pentiumlll 500M J z or above 64MB or above 20MB or more of free space Windows2000 Windows XP Windows VISTA There is a validation date included in the software in order to ensure that
17. t Icp x sin x Vec 1 x Vec Iecp Icp x sin x Therefore the static power loss of one IGBT chip is obtained by 1 Dsin x 0 a 2 dx f dep x sin x xVee sat Icp x sin x x DT Also similarly the FWD power loss is obtained by 1 Dsin x 0 A 2 The IGBT switching loss does not depend on PWM duty it is calculated by the following formula dx gt 1 x Icp x sin x 1 x Vec Icp x sin x x IT T f Psw on Icp x sin x Psw off Icp x sin x x fc e dx IC The FWD switching loss is calculated by j Err Icp x sin x x fc dx Note Mce sat and Vec are for Ti 125 C LIPsw on Psw off and Err are for half bridge switching at Tj 125 C B 2 phase PWM modulation In 2 phase modulation drive mode simulation for modulation depth over 1 but below 1 154 becomes possible Comparing to general 3 phase modulation the voltage conversion ratio is higher and the power 7 13 loss is lower due to the non switching period such as ON hold or OFF hold occurring in 60 degrees of the cycle The calculation method is the same as that for 3 phase modulation Modulation ratio 1 1547 i C Chopper Operation In DC chopper or brake mode an IGBT in a certain phase will do continuous switching while other phase IGBTs are kept ON or OFF The output current is supposed to be a DC current The power loss for choppe
18. tual operation 6 13 4 Simulation Essentials 1 Power Loss Calculation Method The new version of loss simulation software is capable of 3 phase sinusoidal PWM modulation 2 phase PWM modulation and chopper including DC brake operation simulations The simulations are based on the formulas below A Sinusoidal PWM for VVVF inverter Calculate the module power loss for inverter VVVF operation The output current is sinusoidal Although the formula for different modulation schemes is different they can be approximated by the same basic formula as below E Assumptions PWM controlled VVVF inverter with sinusoidal output current PWM signal is generated by comparing sinusoidal and triangular waveforms The PWM signal duty varies within lt 100 where is the modulation depth No ripple component is included in the output current Inverter power factor is cos8 and the load is purely inductive E Formula 1 Dxsin x PWM signal duty is a function of phase angle x as which is equivalent to the output voltage variation From the power factor cos the output current and its corresponding PWM duty at any phase angle can be obtained as below Output current cp x sin x 1 D x sin x 0 PWM Duty 9 X 2 phase modulation is different here On the other hand the IGBT collector emitter saturation voltage Vceisa and FWD forward voltage drop Vec at that time are calculated by Vce sat Vce sa
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