Philips SA2411 User's Manual
Contents
1. 30 00 28 00 Vang he 26 00 24 00 Se os TITT Pr Se ye ee oak 22 00 x Per FN T E 2 2 5 d Q a Efficiency 20 00 3 2 3 4 i 2 8 i 3 2 3 4 3 6 Supply Voltage V Supply Voltage V SR02481 SR02484 Figure 20 DC current vs supply voltage mode high Figure 23 Efficiency vs supply voltage mode high Gain dB Detector Error dB 3 6 Supply Voltage V Supply Voltage V SR02482 SR02485 Figure 21 Gain vs supply voltage mode high Figure 24 Detector error vs supply voltage mode high Pout dBm Supply Voltage V SR02483 Figure 22 Output power vs supply voltage mode high 2003 Feb 07 13 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 12 APPLICATION WITH THE SA2400A Next diagram is the application of the SA2400A with the SA2411 The interface is simple Two equal microstrip lines connect the SA2400A with the SA2411 The length of this connection should be kept to a minimum The supply for the open collectors of the SA2400A is provided via pin 2 of the SA2411 C2 is for supply voltage decoupling RF connection VoD Oo Other connection VDD BIAS VDD MAIN VDD DRIVER DETECTOR lget2. ain versus Output Power i i Current consumption vs Output Power Gain dB Current consumption mA 10 20 Pout dbm 8R02467 Pout dbm SR02469 Figure 6 Gain vs output power Figure 8 Current consumption vs output power 2003 Feb 07 9 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 ACPR versus Output Power Detector Voltage versus Output Power Detector V a D ac o Q lt 22 Pout dbm Pout dbm SR02470 SR02472 Figure 9 ACPR vs output power Figure 11 Detector voltage vs output power ALT versus Output Power Detector Error versus Output Power ALT dBc Detector error dB Pout dbm Pout dbm SR02471 SR02473 Figure 10 ALT vs output power Figure 12 Detector error vs output power 2003 Feb 07 10 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 The next curves present the frequency dependency for an input power of 7 dBm Efficiency versus Frequency Output Power versus Frequency 21 Eficiency E a 2 D a 5 a 5 O 17 2 40E 00 2 43E 00 2 45E 00 2 48E 00 2 50E 00 0 0 2 40E 00 2 43E 00 2 45E 00 2 48E 00 2 50E 00 Frequency GHz SR02474 Frequency GHz SR02476 Figure 13 Output power vs frequency Figure 15
3. the power amplifier The pin Vpp_MAIN is the main supply for the amplifier No additional filtering is needed to meet the 802 11b spec Power detector The power detector detects the power level and transforms it into a low frequency current The detector output must be loaded with a resistor to ground for the highest accuracy This resistor has an optimal value of 5 6 kQ Lower values can be used to comply with maximum input sensitivity of ADCs at the cost of dynamic range The maximum voltage detected is 2 3 V Power mode This pin selects the desired gain and linearity level 13 dB or 14 5 dB gain The low gain is more applicable to high voltage applications from 3 3 V to 3 6 V The high gain is more applicable to low voltage applications lower than 3 3 V NOTE In order to assure optimal thermal performance it is recommended that all ground pins be connected and that the number of vias to ground under the chip be maximized In addition the use of solder mask under the chip for scratch protection is not recommended 2003 Feb 07 4 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 7 CONNECTIVITY DIAGRAM SA2411 SR02385 C1 C2 C3 5 6 pF C4 10nF Ri optional connect to ground via 0 resistor R2 optional resistor to ground to convert current into voltage k1 12 L3 Optional inductors 1 nH 10 nH or microstrip lines with l
4. 0 10166 Modifications Features Section 2 First bullet from 75 Q to 75 Q 25j Q delete bullet 1 dB attenuator Block diagram signal Power mode changed to Power up power mode Pin names modified Functional description Section 6 Power mode from 14 dB or 14 5 dB gain to 13 dB or 14 5 dB gain Typical small signal Gain HIGH changed from 15 dB to 14 5 dB LOW changed from 14 dB to 13 dB Input impedance nom changed from 200 Q to 100 Q Condition changed from differential 100 100 Q to differential 75 Q 25j Q Gain nom changed from 13 0 dB to 12 5 dB Output power nom changed from 20 5 to 20 0 Figures 20 through 24 modified Note added below Figure 25 20020731 Preliminary data 9397 750 10166 20020723 Preliminary data 9397 750 10144 2003 Feb 07 16 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 Data sheet status Product Definitions 1 Level Data sheet status tatus 2 3 l Objective data Development This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Il Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date P
5. AIN Vpp BIAS Vpp DRIVER PWRUP GND GND RF GND ANT SA2411DH GND DETECTOR MODE GND GND SR02384 Figure 2 Pin configuration Table 2 Pin description PIN type is designated by A Analog D Digital I Input O Output e pm pesoen SSCSC d Analog supply Vpp for biasing driver 35 mA en fe em fa en 8 Jeoummg fa en fe em fa Power up pin HIGH amplifier is on LOW amplifier is off Di All GND pins should be connected to ground to guarantee the best performance 2003 Feb 07 3 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 6 FUNCTIONAL DESCRIPTION The main building blocks are Fixed gain amplifier PA Output matching Input matching Power Detector Power Mode Input The device has differential inputs so a balun is needed in the case of single ended operation input impedance is approximately 75 Q 25j Q balanced The inputs can be DC biased with the pin Vpp DRIVER The input matching is optimized to interface with the SA2400A WLAN transceiver chip Amplifier The amplifier is a fixed gain class AB amplifier There is an additional pin Vpp_BIAS to adjust the class A bias current Reducing the class A currents reduces the gain This allows trade offs to be made among gain linearity and current Output matching The output of the amplifier is matched on chip for a 50 Q load The matching includes the supply feed for
6. Efficiency vs frequency Gain versus Frequency ACPR versus frequency Gain dB ACPR dBc 36 2 40E 00 2 43E 00 2 45E 00 2 48E 00 2 50E 00 1 2 40E 00 2 43E 00 2 45E 00 2 48E 00 2 50E 00 Frequency GHz SR02475 SR02477 Frequency GHz Figure 14 Gain vs frequency Figure 16 ACPR vs frequency 2003 Feb 07 11 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 ALT versus Frequency Detector Errror versus Frequency ay B 5 m D uw g 5 z g o a 56 1 0 2 40E 00 2 43E 00 2 45E 00 2 48E 00 2 50E 00 2 40E 00 2 43E 00 2 45E 00 2 48E 00 2 50E 00 Frequency GHz Frequency GHz 5R02478 SR02480 Figure 17 ALT vs frequency Figure 19 Detector error vs frequency Detector Voltage versus Frequency 2 Detector voltage V 0 2 40E 00 2 43E 00 2 45E 00 2 48E 00 2 50E 00 Frequency GHz SR02479 Figure 18 Detector voltage vs frequency 2003 Feb 07 12 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 The last 5 curves are characterization data for supply voltage temperature and power The worst case scenario is the combination of highest temperature lowest supply The best case scenario is the combination of lowest temperature and highest supply voltage The data has been taken using a non modulated carrier at 2 5 GHz
7. INTEGRATED CIRCUITS DATA SAHEET SA2411 20 dBm single chip linear amplifier for WLAN Product data 2003 Feb 07 Supersedes data of 2002 Jul 31 Philips PHILIPS Semiconductors EH LI DS Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 1 DESCRIPTION The SA2411 is a linear power amplifier designed for WLAN application in the 2 4 GHz band Together with the SA2400A the chips form a complete 802 11b transceiver The SA2411 is a Si power amplifier with integrated matching and power level detector 2 FEATURES 0 75 Q 25j Q differential inputs internally matched 50 Q single ended output internally matched 15 dB gain block Power detector Bias adjust pin 18 efficiency at 3 V RF matching for SA2400A 3 APPLICATIONS IEEE 802 11 and 802 11b radios Supports DSSS and CCK modulation Supports data rates 1 2 5 5 and 11 Mbps 2 45 GHz ISM band wireless communication devices Table 1 Ordering information PACKAGE TYPE NUMBER NAME _ DESCRIPTION VERSION SA2411DH TSSOP16 plastic thin shrink small outline package 16 leads body width 4 4 mm SOT403 1 4 BLOCK DIAGRAM Vpp_DRIVER Vpp_BIAS Vpp_MAIN INPUT OUTPUT MATCH MATCH Power up power mode DETECTOR SR02383 Figure 1 Block diagram 2003 Feb 07 2 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 5 PINNING INFORMATION Vpp M
8. d Pout k x V detector Pout is output power in mWatt Vdetector is detector voltage in Volt k sensitivity in mWatt V2 n quadratic factor The quadratic factor is 1 5 The sensitivity is then 49 mWatt V2 The loading of the detector can be different in the application The highest accuracy is achieved with 5 6 kQ But other values can be used to adapt to the maximum input sensitivity of other circuits Other detector loading values result in other k factors The maximum detector voltage is limited to about 2 4 V DC feed at input There is a possibility to add a DC voltage at the input pins pin 4 and pin 5 by feeding pin 2 This option should be used in case the SA2411 is lined up with the SA2400A 2003 Feb 07 6 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 9 OPERATING CONDITIONS The SA2411 shall meet all of the operating conditions outlined in this section Table 3 specifies the absolute maximum ratings for the device Table 4 gives the recommended operating conditions Table 3 Absolute maximum ratings Table 4 Recommended operating conditions Smo paremerer Jim fom mx o E Tame farentoperaingtemperae fa Eo f fe 10 SA2411 TRANSMITTER REQUIREMENTS Table 5 SA2411 transmitter specifications Tamb 25 C Voc 3 V frequency 2 45 GHz Ryetector 5 6 KQ unless otherwise stated Specification Conaion Remas om nom Max ms C E E pF m gt Doom
9. ector 3 WIRE BUS TX OUT HI M TX OUT LO A GND TX OUT HIP A GND A_ bp A a N a A a EN R A ao A N jr a t TX_IN_I_P TX DATA I TX IN 1 M AGCSET TX DATA Q AGCRESET IDCOUT TX INQP A GND SA2400A TX IN Q M SR02487 Figure 25 NOTE A suggested starting point for designing the coupled microstrip lines Length 1 18 Width 12 mils Separation 5 mils with the Dielectric constant 4 6 This should result in Zeven 150 Q Zo 75 Q and Zoga 30 Q There should be no ground plane under the microstrip lines 2003 Feb 07 14 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 TSSOP16 plastic thin shrink small outline package 16 leads body width 4 4 mm SOT403 1 TF AD Ok i eS L Notes 1 Plastic or metal protrusions of 0 15 mm maximum per side are not included 2 Plastic interlead protrusions of 0 25 mm maximum per side are not included OUTLINE REFERENCES EUROPEAN VERSION PROJECTION SOT403 1 E 99 12 27 ISSUE DATE 2003 Feb 07 15 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 REVISION HISTORY ev Date oser SSS 3 20030207 Product data 9397 750 10825 ECN 853 2346 29486 of 07 February 2003 supersedes Preliminary data SA2411 revision 2 of 31 July 2002 9397 75
10. en row ouput power mode pn ois roundes fe fm Leakage cure ____ Vowup 0V vosesov A fo fm AC 802 11b MODULATION Ouputbackot _____ feaivo1o 1 eB conpressonotangeceriay die 4 AF teweney fe fas fe er nputmpesanee omeematrsmae fel fa oadimpesanee seemed SSCS EE EE Power gain for small signal Mode High gain Input level 20 dBm 145 j Power gain for small signal Mode Low gain Input level 20 dBm h JB Ouputpower Meeting tne FOO specs of 80 dBc ara 50 dBc mode crion oo fom C pf fm em pp fe f Output power Meeting the FCC specs of 30 dBc and 50 dBc mode low 420 0 dBm aa oo Power ramping up time 10 to 90 ramp up 05 j Js Power ramping down when a 90 to 10 ramp down 0 5 us enabled b 10 to carrier leakage level 0 5 Error Vector Magnitude 11 Msymbols s QPSK Both RF outputs b tm Pin 15 PWRUP OV p FP e dBc Harmonic Suppression at 2 and3 fundamental frequency output power 20 dBm 40 times fundamental frequency 2003 Feb 07 7 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 Table 6 SA2411 Detector specification Tamb 25 C Vcc 3 0 V specication oonamon Remas mn nom mer oms Detector sonstviy winske oadressorogo F pe p me At 16 dBm 40 C to 80 C from 2 7 V to 3 6 V Joa l e E os f CS petcciorquacraictacr fis a Spread f
11. ength 1 10 mm No inductors and directly connecting all supplies to Vpp might cause problems The optimal values of the inductors depends on the application board 2003 Feb 07 5 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 8 OPERATION The SA2411 linear amplifier is intended for operation in the 2 4 GHz band specifically for IEEE 802 11 1 and 2 Mbits s DSSS and 5 5 and 11 Msymbols s CCK standards Throughout this document the operating RF frequency refers to the ISM band between 2 4 and 2 5 GHz Amplifier Output Power The SA2411 linear amplifier is designed to give at least 19 dBm output power for an 11 Msymbols s CCK modulated input carrier At 19 dBm output power the ACPR specs are met The fixed gain amplifier amplifies the input signal by 14 5 dB typically Power Mode The biasing can be adjusted to change the gain and therefore the maximum linear output power For high supply voltages gt 3 2 V the low gain mode is advised For low supply voltages lt 3 3 V the high gain mode is advised Power Mode Typical output power Typical small Typical DC current Typical Current signal Gain no RF signal consumption Power detector The power detector current output is linear proportional with the RF output voltage The RF output power is quadratic proportional to the RF output voltage Therefore the detector is quadratic proportional to the output power The following relation can be expresse
12. hilips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible product Ill Product data Production This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Relevant changes will be communicated via a Customer Product Process Change Notification CPCN 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http www semiconductors philips com 3 For data sheets describing multiple type numbers the highest level product status determines the data sheet status Definitions Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given i
13. n the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification Disclaimers Life support These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance When the product is in full production status Production relevant changes will be communicated via a Customer Product Process Change Notification CPCN Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no license or title under any patent copyright or mask work right to these products and makes no representati
14. om sampletosarple 20demouputpomer fr f f Absolute detector voltage 19 dBm output power 14 jv Absolute detector voltage error From 30 C to 80 C from 2 7 V to 3 6 V at 19 dBm output power Detector power range 11 GRAPHS The following graphs are only for a typical sample measured on a SA2411 test board under nominal condition applying an 11Mb s CCK 802 11b modulation Corrections for input output and supply losses have been applied The dotted lines represent the low gain mode The solid lines are for the high gain mode The first two graphs are small signal graphs The gain and the DC currents are plotted versus supply voltage DC current versus Supply Voltage Gain versus Supply Voltage small signal current mA Small signal gain dB 34 3 1 3 5 Supply Voltage V Supply Voltage V SR02465 Figure 3 DC current vs supply voltage Figure 4 Gain vs supply voltage 2003 Feb 07 8 Philips Semiconductors Product data 20 dBm single chip linear amplifier for WLAN SA2411 The next eight graphs are presenting the power sweep for both gain modes at nominal conditions Output Power versus Input Power Efficiency versus Output Power 5 r amp ol 2 5 3 a ad AS E i 2 10 Pin dbm P R024 out dbm 9102468 SR02468 Figure 5 Output power vs input power Figure 7 Efficiency vs output power
15. ons or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Contact information Koninklijke Philips Electronics N V 2003 For additional information please visit All rights reserved Printed in U S A http www semiconductors philips com Fax 31 40 27 24825 Date of release 02 03 Document order number 9397 750 10825 Lett make things better RR PHILIPS For sales offices addresses send e mail to sales addresses www semiconductors philips com
Download Pdf Manuals
Related Search