Philips BGD502 User's Manual
Contents
1. DIMENSIONS mm are the original dimensions A Al D d E max max C max max max UNIT mm 20 8 9 1 0 25 27 2 2 54 13 75 2 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION ISSUE DATE SOT115J ET 99 02 06 2001 Nov 15 5 Philips Semiconductors 550 MHz 18 5 dB gain power doubler amplifier DATA SHEET STATUS PRODUCT STATUS Development DATA SHEET STATUS Objective data Product specification BGD502 DEFINITIONS This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification product This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible Product data Production Notes This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Changes will be communicated according to the Customer Product Process2. DISCRETE SEMICONDUCTORS DATA SHEET BGD502 550 MHz 18 5 dB gain power doubler amplifier Product specification 2001 Nov 15 Supersedes data of 1995 Oct 25 Philips PHILIPS Semiconductors DH l LI E Philips Semiconductors Product specification 550 MHz 18 5 dB gain power doubler amplifier BGD502 FEATURES PINNING SOT115J e Excellent linearity DESCRIPTION e Extremely low noise e Silicon nitride passivation common e Rugged construction e TiPtAu metallized crystals ensure optimal reliability common DESCRIPTION Hybrid amplifier modules for CATV systems operating over a frequency range of 40 to 550 MHz at a voltage supply of 24 V DC Side view MSA319 Fig 1 Simplified outline QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS power gain f 50 MHz f 550 MHz total current consumption DC Vg 24 V LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 60134 SYMBOL PARAMETER MAX UNIT RF input voltage dBmV T storage temperature 100 operating mounting base temperature 100 2001 Nov 15 2 Philips Semiconductors Product specification 550 MHz 18 5 dB gain power doubler amplifier BGD502 CHARACTERISTICS Table 1 Bandwidth 40 to 550 MHz Vg 24 V Tmb 35 C Zs ZL 75 2 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Gp power gain f 50 MHz 18 19 dB f 550 MHz 18 8 20 8 dB slope cable equival
3. Change Notification CPCN procedure SNW SQ 650A 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http www semiconductors philips com DEFINITIONS Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification DISCLAIMERS Life support applications These products are not designed for use in life support app
4. Fax 31 40 27 24825 For sales offices addresses send e mail to sales addresses www semiconductors philips com Koninklijke Philips Electronics N V 2001 SCA73 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 613518 04 pp8 Date of release 2001 Nov 15 Document order number 9397 750 08825 lets make things better i eee amp PHILIPS
5. MHz f 40 to 450 MHz input return losses f 40 to 80 MHz f 80 to 160 MHz f 160 to 450 MHz output return losses phase response f 40 to 80 MHz f 80 to 160 MHz f 160 to 450 MHz f 50 MHz composite triple beat 60 channels flat Vo 46 dBmV measured at 445 25 MHz composite second order distortion cross modulation second order distortion 60 channels flat Vo 46 dBmV measured at 446 5 MHz 60 channels flat Vo 46 dBmV measured at 55 25 MHz note 1 output voltage noise figure dim 60 dB note 2 f 450 MHz Notes total current consumption DC note 3 1 fp 55 25 MHz Vp 46 dBmV fq 391 25 MHz Vq 46 dBmV measured at fp fq 446 5 MHz 2 Measured according to DIN45004B fp 440 25 MHz Vp Vo fq 447 25 MHz Vq Vo 6 dB fr 449 25 MHz Vr Vo 6 dB measured at fp fq fr 438 25 MHz 3 The modules normally operate at VB 24 V but are able to withstand supply transients up to VB 30 V 2001 Nov 15 Philips Semiconductors Product specification 550 MHz 18 5 dB gain power doubler amplifier BGD502 PACKAGE OUTLINE Rectangular single ended package aluminium flange 2 vertical mounting holes 2 x 6 32 UNC and 2 extra horizontal mounting holes 7 gold plated in line leads SOT115J
6. ent f 40 to 550 MHz flatness of frequency response input return losses f 40 to 550 MHz f 40 to 80 MHz f 80 to 160 MHz f 160 to 550 MHz output return losses phase response f 40 to 80 MHz f 80 to 160 MHz f 160 to 550 MHz f 50 MHz composite triple beat cross modulation composite second order distortion 77 channels flat Vo 44 dBmV measured at 547 25 MHz 77 channels flat Vo 44 dBmV measured at 55 25 MHz 77 channels flat Vo 44 dBm V measured at 548 5 MHz second order distortion output voltage note 1 dim 60 dB note 2 ltot noise figure total current consumption DC f 550 MHz note 3 Notes 1 fp 55 25 MHz Vp 44 dBmV fq 493 25 MHz Vq 44 dBmV measured at fp fq 548 5 MHz 2 Measured according to DIN45004B fp 540 25 MHz Vp Vo fq 547 25 MHz Vq Vo 6 dB fr 549 25 MHz Vr Vo 6 dB measured at fp fq fr 538 25 MHz 3 The module normally operates at VB 24 V but are able to withstand supply transients up to VB 30 V 2001 Nov 15 Philips Semiconductors 550 MHz 18 5 dB gain power doubler amplifier Table 2 Bandwidth 40 to 450 MHz Vg 24 V Tmb 35 C Zs ZL 75 Q SYMBOL PARAMETER CONDITIONS Product specification BGD502 Gp power gain f 50 MHz f 450 MHz SL slope cable equivalent flatness of frequency response f 40 to 450
7. liances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes without notice in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no licence or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified CAUTION This product is supplied in anti static packing to prevent damage caused by electrostatic discharge during transport and handling For further information refer to Philips specs SNW EQ 608 SNW FQ 302A and SNW FQ 302B 2001 Nov 15 Philips Semiconductors Product specification 550 MHz 18 5 dB gain power doubler amplifier BGD502 NOTES 2001 Nov 15 7 Philips Semiconductors a worldwide company Contact information For additional information please visit http www semiconductors philips com
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