NXP Semiconductors SA58670A User's Manual
Contents
1. 14 2 Wave and reflow soldering 14 3 Wave soldering n nananana eee eee 14 4 Reflow soldering 200 15 Abbreviations 000 e eee eee eee 16 Revision history 00e cece ee eeee 17 Legal information 00 eeeeeeee 17 1 Data sheet status 2 0 17 2 Definitions 02 20000 ork ee 17 3 Disclaimers a c0560220002eee Sere ee eawd 17 4 Trademarks 0000 00 e eee eee 18 Contact information 0 006 19 CONtTEMS i tenes ee soe eee eee eae founded by Please be aware that important notices concerning this document and the product s described herein have been included in section Legal information NXP B V 2008 All rights reserved For more information please visit http www nxp com For sales office addresses please send an email to salesaddresses nxp com Date of release 23 October 2008 Document identifier SA58670A_22. 6 2 Pin description Table 2 Pin description Symbol Pin Description G1 1 gain select input 1 OUTLP 2 left channel positive output PVDD 3 power supply voltage level same as AVDD PGND 4 power ground OUTLN 5 left channel negative output n c 6 not connected SDL 7 left channel shutdown input active LOW SDR 8 right channel shutdown input active LOW AVDD 9 analog supply voltage level same as PVDD n c 10 not connected OUTRN 11 right channel negative output PGND 12 power ground PVDD 13 power supply voltage level same as AVDD OUTRP 14 right channel positive output GO 15 gain select input 0 INRP 16 right channel positive input INRN 17 right channel negative input AGND 18 analog ground NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 3 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier Table 2 Pin description continued Symbol Pin Description INLN 19 left channel negative input INLP 20 left channel positive input DAP exposed die attach paddle connect to ground plane heat spreader 7 Limiting values Table 3 Limiting values In accordance with the Absolute Maximum Rating System IEC 60134 Symbol Parameter Conditions Min Max Unit Vpp supply voltage Active mode 0 3 6 0 V Shutdown mode 0 3 7 0 V VI input voltage pin SDL GND Vpp V pin SDR GND Vpp V other pins 0 3 Vpp 0 3 V P power dissipation deratin
3. E Wireless and cellular handset and PDA E Portable DVD player E USB speaker E Notebook PC E Portable radio and gaming founded by Philips NXP Semiconductors SA58670A E Educational toy 4 Ordering information 2 1 W channel stereo class D audio amplifier Table 1 Ordering information Type number Package Name Description SA58670ABS HVQFN20 plastic thermal enhanced very thin quad flat package no leads 20 terminals body 4 x 4 x 0 85 mm Version SOT917 1 5 Block diagram SA58670A INRP right input INRN n c INLP left input INLN Go G1 SDR BIAS Refer to Table 6 for gain selection Fig 1 Block diagram CIRCUITRY S pwm 4 INTERNAL OSCILLATOR H PEH vte an EA SHORT CIRCUIT PROTECTION H BRIDGE OUTLP 4 12 002aad663 VDD VDD SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 2 of 24 NXP Semiconductors SA58670A 6 Pinning information SA58670A_2 6 1 Pinning 2 1 W channel stereo class D audio amplifier 1 Fig 2 Exposed Die Attach Paddle DAP Pin configuration for HVQFN20 Q a Z ZQ terminal 1 z292 index area _ _ neS fo N G1 GO OUTLP OUTRP PVDD PVDD PGND PGND OUTLN OUTRN g 002aad664 a a gt lt Transparent top view
4. Zi input impedance delay time from shutdown to start up ta sd startup Vaio output noise voltage Gyo 6 dB Gv 12 dB Gv 18 dB Gyicy 24 dB Voo 3 6 V Vpp 3 6 V f 20 Hz to 20 kHz inputs are AC grounded no weighting A weighting Min Typ 0 72 1 4 2 1 0 11 0 14 73 77 28 1 17 3 9 8 5 2 3 5 35 27 Max Unit dB dB dB kQ z kQ kQ kQ 1 Vpp is the supply voltage on pins PVDD and pin AVDD SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 6 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier 10 Typical performance curves SA58670A_2 001aah484 102 THD N 10 1 10 2 10 5 10 4 10 3 10 2 1071 1 10 Po W a Gye 24 dB 001aah485 102 THD N 10 10 1 10 2 10 5 10 4 10 3 10 2 1071 1 10 b Gy 6 dB fi 1 kHz 1 Vpp 2 5 V 2 Vpp 3 6 V 3 Vpop 5 0 V Fig 3 Total harmonic distortion plus noise as a function of output power R 8 Q NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 7 of 24 NXP Semiconductors SA58670A SA58670A_2 2 1 W channel stereo class D audio amplifier 001aah486 102 THD N 10 10 1 10 2 10 5 104 10 3 10 2 10 1 1 10 Po W a Gvcl 24 dB 001aah487 102 THD N 10 10 1 10
5. Left channel 2 Right channel Fig 9 103 Noise output voltage RMS value as a function of frequency NXP B V 2008 All rights reserved SA58670A_2 Product data sheet Rev 02 23 October 2008 12 of 24 NXP Semiconductors SA58670A SA58670A_2 2 1 W channel stereo class D audio amplifier 001aah505 Oct dB 100 f kHz 001aah506 Oct dB 100 120 b R 8Q 1 Vpp 2 5 V 2 Vpp 3 6 V 3 Vpp 5 0 V Fig 10 Crosstalk one to one as a function of frequency NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 13 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier 6 001aah507 55 001aah508 1 VDD IDD 2 V 5V mA oe 4 45 3 6 V 25V 2 3 5 0 25 0 1 2 3 2 5 3 5 4 5 5 5 VspR Vsou V Voo V 1 left channel R 8 Q 2 right channel Ry 4 Q 3 right channel R 8 Q Fig 11 Supply voltage as a function of shutdown Fig 12 Supply current as a function of supply voltage voltage 1600 001aah509 800 0
6. be wave soldered due to an increased probability of bridging The reflow soldering process involves applying solder paste to a board followed by component placement and exposure to a temperature profile Leaded packages packages with solder balls and leadless packages are all reflow solderable Key characteristics in both wave and reflow soldering are e Board specifications including the board finish solder masks and vias e Package footprints including solder thieves and orientation e The moisture sensitivity level of the packages e Package placement e Inspection and repair e Lead free soldering versus SnPb soldering 14 3 Wave soldering SA58670A_2 Key characteristics in wave soldering are e Process issues such as application of adhesive and flux clinching of leads board transport the solder wave parameters and the time during which components are exposed to the wave e Solder bath specifications including temperature and impurities NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 20 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier 14 4 Reflow soldering Key characteristics in reflow soldering are e Lead free versus SnPb soldering note that a lead free reflow process usually leads to higher minimum peak temperatures see Figure 19 than a SnPb process thus reducing the process window e Solder paste printing issues including
7. illustrative purposes only NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification Limiting values Stress above one or more limiting values as defined in the Absolute Maximum Ratings System of IEC 60134 may cause permanent damage to the device Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied Exposure to limiting values for extended periods may affect device reliability Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale as published at http www nxp com profile terms including those pertaining to warranty intellectual property rights infringement and limitation of liability unless explicitly otherwise agreed to in writing by NXP Semiconductors In case of any inconsistency or conflict between information in this document and such terms and conditions the latter will prevail No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant conveyance or implication of any license under any copyrights patents or other industrial or intellectual property rights 17 4 Trademarks Notice All referenced brands product names
8. 01aah510 IDD IDD mA mA 1200 600 800 400 D B 3 1 2 A 400 200 0 0 0 0 4 0 8 1 2 1 6 2 0 0 0 4 0 8 1 2 1 6 Po W Po W a RL 4Q b RL 8Q 1 Vpp 2 5 V 2 Vpop 3 6 V 3 Vpop 5 0 V Fig 13 Supply current as a function of output power SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 14 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier Npo 08 001aah511 0 4 001aah512 P 0 3 0 2 2 0 1 3 o i 0 0 4 0 8 1 2 1 6 Po W Po W a RL 4Q b RL 8Q 1 Vpp 5 0 V 2 Vpp 3 6 V 3 Vpp 2 5 V Fig 14 Power dissipation as a function of output power 100 001aah513 100 001taah514 1 1 6 Po W Po W a RL 42 b RL 8Q 1 Vpp 5 0 V 2 Vpp 3 6 V 3 Vpp 2 5 V Fig 15 Output power efficiency as a function of output power SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 15 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier 11 Application information 11 1 SA58670A_2 differential inputs differential inputs left channel
9. 2 10 5 1074 1078 10 2 10 1 1 10 Po W b Gv 6 dB fi 1 kHz 1 Vpop 2 5 V 2 Vpp 3 6 V 3 Vpp 5 0 V Fig 4 Total harmonic distortion plus noise as a function of output power R 4 Q NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 8 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier 001aah488 10 102 103 104 105 s Po 350 mW Vi 590 mV RMS Po 240 mW Vi 490 mV RMS Po 120 mW Vi 346 mV RMS RL 42 OD 001aah489 10 102 108 104 10 Po 260 mW Vi 721 1 mV RMS Po 180 mW Vi 600 mV RMS Po 90 mW Vj 424 3 mV RMS RL 8Q Gvcl 6 dB Fig 5 Total harmonic distortion plus noise as a function of frequency Vpp 2 5 V os On SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 9 of 24 NXP Semiconductors SA58670A SA58670A_2 2 1 W channel stereo class D audio amplifier 001aah490 10 102 103 104 105 P 825 mW Vj 908 3 mV RMS Po 550 mW Vi 741 6 mV RMS Po 275 mW Vj 524 4 mV RMS RL 42 Q N ee ee 001aah491 10 102 103 104 105 sat Po 560 mW Vi 1 058 V RMS Po 375 mW Vi 866 mV RMS Po 190 mW Vi 616 4 mV RMS RL 82 os On Gvcl 6 dB Fig 6 Total harmonic distortion plus noise as a fun
10. SA58670A 2 1 W channel stereo class D audio amplifier Rev 02 23 October 2008 Product data sheet 1 General description 2 Features The SA58670A is a stereo filter free class D audio amplifier which is available in an HVQFN20 package with the exposed Die Attach Paddle DAP The SA58670A features independent shutdown controls for each channel The gain may be set at 6 dB 12 dB 18 dB or 24 dB with gain select pins GO and G1 Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology Fast start up time and small package makes it an ideal choice for both cellular handsets and PDAs The SA58670A delivers 1 4 W channel at 5 0 V and 720 mW channel at 3 6 V into 8 Q It delivers 2 1 W channel at 5 0 V into 4 Q The maximum power efficiency is excellent at 70 to 74 into 4 Q and 84 to 88 into 8 Q The SA58670A provides thermal and short circuit shutdown protection E Output power 2 1 W channel into 4 Q at 5 0 V 1 4 W channel into 8 Q at 5 0 V 720 mW channel into 8 Q at 3 6 V Supply voltage 2 5 V to 5 5 V Independent shutdown control for each channel Selectable gain 6 dB 12 dB 18 dB and 24 dB High SVRR 77 GB at 217 Hz Fast start up time 3 5 ms Low supply current Low shutdown current Short circuit and thermal protection Space savings with 4 mm x 4 mm HVQFN20 package Low junction to ambient thermal resistance of 24 K W with exposed DAP 3 Applications
11. V pins SDL SDR GO G1 Vpp 2 5 V to 5 5 V pins SDL SDR GO G1 Vpp 5 5 V Vi Vpp Vpp 5 5 V V 0V Vpp 2 5 V to 5 5 V Veo Ve1 0 35 V Veo Voo Ver 0 35 V Veo 0 35 V Va1 Von Veo Var Voo Vpp 2 5 V Vpp 3 6 V Vpp 5 5 V measured differentially inputs AC grounded Gyo 6 dB Vpp 2 5 V to 5 5 V shutdown mode output impedance Vspr Vspu 0 35 V Min 2 5 250 5 5 11 5 17 5 23 5 300 12 18 24 700 570 500 350 6 5 12 5 18 5 24 5 Unit mA mA mA nA dB dB uA uA kHz dB dB dB dB m mQ mQ mV kQ 1 Vpp is the supply voltage on pins PVDD and pin AVDD GND is the ground supply voltage on pins PGND and pin AGND SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 5 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier 9 Dynamic characteristics Conditions per channel f 1 kHz THD N 10 R 8 Q Vpp 3 6 V R 8 Q Vpp 5 0 V R 4 Q Vpp 5 0 V Vpp 5 0 V Gv 6 dB f 1 kHz Po 0 5 W Po 1 0 W Gycl 6 dB f 217 Hz Vpp 3 6 V Vpp 5 0 V Vpp 5 0 V Gyel 6 dB f 217 Hz Table 5 Dynamic characteristics Tamb 25 C R 8 Q unless otherwise specified Symbol Parameter Po output power THD N total harmonic distortion plus noise SVRR supply voltage ripple rejection CMRR common mode rejection ratio
12. ction of frequency Vpp 3 6 V NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 10 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier 001aah492 10 102 103 104 105 Po 1 65 W Vi 1 285 V RMS Po 1 1 W Vi 1 05 V RMS P 550 mW Vi 741 6 mV RMS a R 4Q anana Q N STS aS 001aah493 Po 1 16 W Vi 1 523 V RMS Po 775 mW Vj 1 245 V RMS Po 380 mW Vi 871 8 mV RMS R 82 7T 8ng Gye 6 dB Fig 7 Total harmonic distortion plus noise as a function of frequency Vpp 5 0 V SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 11 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier 001aah495 Oct dB 100 3 be 120 103 1 Vpp 3 6 V L channel to R channel 2 Vpp 3 6 V R channel to L channel 3 Vpp 5 0 V L channel to R channel 4 Vpp 5 0 V R channel to L channel Crosstalk stepped all to one as a function of frequency 104 105 001aah497 1073 Vn o v 1074 10 102 1
13. ed The 3 dB cut off frequency created by the input coupling capacitor and the input resistors see Table 6 is calculated by Equation 1 1 f 3aB 27x R x C 1 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 16 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier Table 6 Gain selection G1 Go Gain V V Gain dB Input impedance kQ LOW LOW 2 6 28 1 LOW HIGH 4 12 17 3 HIGH LOW 8 18 9 8 HIGH HIGH 16 24 5 2 Since the value of the input decoupling capacitor and the input resistance determined by the gain setting affects the low frequency performance of the audio amplifier it is important to consider this during the system design Small speakers in wireless and cellular phones usually do not respond well to low frequency signals so the 3 dB cut off frequency may be increased to block the low frequency signals to the speakers Not using input coupling capacitors may increase the output offset voltage Equation 2 is solved for Ci 1 Q 2uxXR X f_zap 11 3 PCB layout considerations Component location is very important for performance of the SA58670A Place all external components very close to the SA58670A Placing decoupling capacitors directly at the power supply voltage pins increases efficiency because the resistance and inductance in the trace between the SA58670A power supply voltage pins and the decoupling capacitor causes a lo
14. erature depends on the heat transferring ability of the heat spreader on the PCB layout In Table 3 Limiting values the power derating factor is given as 41 6 mW K The device thermal resistance Rin a is the reciprocal of the power derating factor Convert the power derating factor to Rtnj a by Equation 3 I 1 Roy a 24 KIW 3 th j a derating factor 0 0416 3 For a maximum allowable junction temperature Tj 150 C and Rihj a 24 K W and a maximum device dissipation of 1 5 W 750 mW per channel and for 2 1 W per channel output power 4 Q load 5 V supply the maximum ambient temperature is calculated using Equation 4 T omiman Tima Baa Poa 150 049153 14 4 The maximum ambient temperature is 114 C at maximum power dissipation for 5 V supply and 4 Q load If the junction temperature of the SA58670A rises above 150 C the thermal protection circuitry turns the SA58670A off this prevents damage to IC Using speakers greater than 4 Q further enhances thermal performance and battery lifetime by reducing the output load current and increasing amplifier efficiency Additional thermal information The SA58670A HVQFN20 package incorporates an exposed DAP that is designed to solder the mount directly to the PCB heat spreader By the use of thermal vias the DAP may be soldered directly to a ground plane or special heat sinking layer designed into the PCB The thickness and area of the heat spreader may be maxim
15. g factor 41 6 mW K Tamb 25 C 5 2 Ww Tamb 75 C 3 12 Ww Tamb 85 C 2 7 W Tamb ambient temperature operating in free air 40 85 C Tj junction temperature operating 40 150 C Tstg storage temperature 65 85 C Vesd electrostatic discharge human body model 2000 V voltage machine model 200 v 1 Vpp is the supply voltage on pins PVDD and pin AVDD GND is the voltage ground on pins PGND and pin AGND SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 4 of 24 NXP Semiconductors SA58670A 8 Static characteristics Table 4 Tamb 25 C unless otherwise specified Static characteristics 2 1 W channel stereo class D audio amplifier Symbol Vpop Ipp IDD sa PSRR Vi em CMRR Pins OUTLP OUTLN OUTRP and OUTRN drain source on state resistance Rpson Vocottset Zo sd Parameter supply voltage supply current shutdown mode supply current power supply rejection ratio common mode input voltage common mode rejection ratio HIGH level input voltage LOW level input voltage HIGH level input current LOW level input current switching frequency closed loop voltage gain output offset voltage Conditions operating Vpp 2 5 V no load Vpp 3 6 V no load Vpp 5 5 V no load no input signal Vspr Vso GND Vpp 2 5 V to 5 5 V inputs are shorted together Vpp 2 5 V to 5 5 V Vpp 2 5 V to 5 5
16. ized to optimize heat transfer and achieve lowest package thermal resistance 12 Test information SA58670A_2 AP585 AUX0025 AUDIO 30 kHz ANALYZER LOW PASS FILTER AP585 MEASUREMENT INPUTS 002aad417 Fig 17 Test circuit NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 18 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier 13 Package outline HVQFN20 plastic thermal enhanced very thin quad flat package no leads 20 terminals body 4 x 4 x 0 85 mm SOT917 1 terminal 1 index area detail X terminal 1 index area DIMENSIONS mm are the original dimensions A0 max UNIT A1 b c DM Dh E Eh 0 05 0 30 41 245 41 245 mmi 1 ooo 018 39 215 39 215 Note 1 Plastic or metal protrusions of 0 075 mm maximum per side are not included OUTLINE REFERENCES EUROPEAN VERSION JEDEC JEITA PROJECTION SOT917 1 aes MO 220 ee E a i a ISSUE DATE Fig 18 Package outline SOT917 1 HVQFN20 SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 19 of 24 NXP Semic
17. onductors SA58670A 2 1 W channel stereo class D audio amplifier 14 Soldering of SMD packages 14 1 14 2 This text provides a very brief insight into a complex technology A more in depth account of soldering ICs can be found in Application Note AN10365 Surface mount reflow soldering description Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards PCBs to form electrical circuits The soldered joint provides both the mechanical and the electrical connection There is no single soldering method that is ideal for all IC packages Wave soldering is often preferred when through hole and Surface Mount Devices SMDs are mixed on one printed wiring board however it is not suitable for fine pitch SMDs Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder The wave soldering process is suitable for the following e Through hole components e Leaded or leadless SMDs which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered Packages with solder balls and some leadless packages which have solder lands underneath the body cannot be wave soldered Also leaded SMDs with leads having a pitch smaller than 0 6 mm cannot
18. re MSL limit damage level minimum peak temperature minimum soldering temperature peak temperature time 001aac844 MSL Moisture Sensitivity Level Fig 19 Temperature profiles for large and small components For further information on temperature profiles refer to Application Note AN10365 Surface mount reflow soldering description 15 Abbreviations Table 9 Abbreviations Acronym DAP DVD EMI ESR LC PC PCB PDA PWM USB Description Die Attach Paddle Digital Video Disc ElectroMagnetic Interference Equivalent Series Resistance inductor capacitor filter Personal Computer Printed Circuit Board Personal Digital Assistant Pulse Width Modulator Universal Serial Bus 16 Revision history Table 10 Revision history Document ID Release date SA58670A_2 20081023 Modifications e Table 4 Data sheet status Change notice Product data sheet Static characteristics added lpp sa specification SA58670A_1 20080220 Product data sheet Supersedes SA58670A_1 SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 22 of 24 NXP Semiconductors SA58670A 17 Legal information 17 1 Data sheet status 2 1 W channel stereo class D audio amplifier Document status I2 Product status Definition Objective short data sheet Development Preliminary short data shee
19. right channel 1 uF L L 1 uF 1 uF 1 uF INLP INLN AGND INRN INRP SA58670A OUTAN lel Fig 16 SA58670A application schematic VDD 1 uF 10 uF Ai 002aad665 Power supply decoupling considerations The SA58670A is a stereo class D audio amplifier that requires proper supply voltage decoupling to ensure the rated performance for THD N and power efficiency To decouple high frequency transients supply voltage spikes and digital noise on the supply voltage bus line a low Equivalent Series Resistance ESR capacitor of typically 1 uF is placed as close as possible to the PVDD pins of the SA58670A It is important to place the decoupling capacitor at the supply voltage pins of the SA58670A because any resistance or inductance in the PCB trace between the SA58670A and the capacitor can cause a loss in efficiency Additional decoupling using a larger capacitor 4 7 uF or greater may be done on the supply voltage connection on the PCB to filter low frequency signals Usually this is not required due to high PSRR of the SA58670A Input capacitor selection The SA58670A does not require input coupling capacitors when used with a differential audio source that is biased from 0 5 V to Vpp 0 8 V In other words the input signal must be biased within the common mode input voltage Viicm range If high pass filtering is required or if it is driven using a single ended source input coupling capacitors are requir
20. service names and trademarks are the property of their respective owners For more information please visit http Awww nxp com For sales office addresses please send an email to salesaddresses nxp com SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 23 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier 19 Contents 1 General description 020e00eee 2 FeatureS 0 cece eee eee eens 3 Applications 0 0 00 eee eee 4 Ordering information 0 0006 5 Block diagram 00 cee cence eens 6 Pinning information 0 00 eee eee 6 1 PINNING oet e eed wa ee ba Me 6 2 Pin description 0 2000 7 Limiting values 0 0 0 cece eee eee 8 Static characteristics 0 0000 9 Dynamic characteristics 10 Typical performance curves 11 Application information 06 11 1 Power supply decoupling considerations 11 2 Input capacitor selection 11 3 PCB layout considerations 11 4 Filter free operation and ferrite bead filters 11 5 Efficiency and thermal considerations 11 6 Additional thermal information 12 Test information 00 e eee eee 13 Package outline 200 e eee eee 14 Soldering of SMD packages 14 1 Introduction to soldering
21. smearing release and adjusting the process window for a mix of large and small components on one board Reflow temperature profile this profile includes preheat reflow in which the board is heated to the peak temperature and cooling down It is imperative that the peak temperature is high enough for the solder to make reliable solder joints a solder paste characteristic In addition the peak temperature must be low enough that the packages and or boards are not damaged The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 7 and 8 Table 7 SnPb eutectic process from J STD 020C Package thickness mm Package reflow temperature C Volume mm lt 350 gt 350 lt 25 235 220 gt 25 220 220 Table 8 Lead free process from J STD 020C Package thickness mm Package reflow temperature C Volume mm lt 350 350 to 2000 gt 2000 lt 1 6 260 260 260 1 6 to 2 5 260 250 245 gt 2 5 250 245 245 Moisture sensitivity precautions as indicated on the packing must be respected at all times Studies have shown that small packages reach higher temperatures during reflow soldering see Figure 19 SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 21 of 24 NXP Semiconductors SA58670A 2 1 W channel stereo class D audio amplifier temperature maximum peak temperatu
22. ss in power efficiency The trace width and routing are also very important for power output and noise considerations For high current pins PVDD PGND and audio output the trace widths should be maximized to ensure proper performance and output power Use at least 500 um wide traces For the input pins INRP INRN INLP and INLN the traces must be symmetrical and run side by side to maximize common mode cancellation 11 4 Filter free operation and ferrite bead filters A ferrite bead low pass filter can be used to reduce radio frequency emissions in applications that have circuits sensitive to frequencies greater than 1 MHz A ferrite bead low pass filter functions well for amplifiers that must pass FCC unintentional radiation requirements for frequencies greater than 30 MHz Choose a bead with high impedance at high frequencies and very low impedance at low frequencies In order to prevent distortion of the output signal select a ferrite bead with adequate current rating For applications in which there are circuits that are EMI sensitive to low frequencies lt 1 MHz and there are long leads from amplifier to speaker it is necessary to use an LC output filter SA58670A_2 NXP B V 2008 All rights reserved Product data sheet Rev 02 23 October 2008 17 of 24 NXP Semiconductors SA58670A 11 5 2 1 W channel stereo class D audio amplifier Efficiency and thermal considerations The maximum ambient operating temp
23. t Qualification Product short data sheet Production This document contains data from the objective specification for product development This document contains data from the preliminary specification This document contains the product specification 1 Please consult the most recently issued document before initiating or completing a design 2 The term short data sheet is explained in section Definitions 3 The product status of device s described in this document may have changed since this document was published and may differ in case of multiple devices The latest product status information is available on the Internet at URL http www nxp com 17 2 Definitions Draft The document is a draft version only The content is still under internal review and subject to formal approval which may result in modifications or additions NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information Short data sheet A short data sheet is an extract from a full data sheet with the same product type number s and title A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information For detailed and full information see the relevant full data sheet which is available on request via the local NXP Semicond
24. uctors sales office In case of any inconsistency or conflict with the short data sheet the full data sheet shall prevail 17 3 Disclaimers General Information in this document is believed to be accurate and reliable However NXP Semiconductors does not give any representations or warranties expressed or implied as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document including without limitation specifications and product descriptions at any time and without notice This document supersedes and replaces all information supplied prior to the publication hereof Suitability for use NXP Semiconductors products are not designed authorized or warranted to be suitable for use in medical military aircraft space or life support equipment nor in applications where failure or 18 Contact information malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury death or severe property or environmental damage NXP Semiconductors accepts no liability for inclusion and or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and or use is at the customer s own risk Applications Applications that are described herein for any of these products are for
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