Samsung SM843T 120 GB
Contents
1. M474B1G73BHO YKO reef fe fos PP Pf mm ae a a Ce fe fc os PEELE oe oo Pas aw von Process Technology The lower the number the more features come DIMM speed and Volatge ystem speed and voltag with the parts 1600 speed in combination with or pre installed Jadded DIMM as 1 35V is the main output of 30nm technology fig D ipprad That is why Samsung does not ask for a x x premium And we recommend to focus on one part number per product density to reduce the inventory easier planning and importing to different plaforms and applications ae you can recognize ed ass technology on the modues you use with hints on the Module sticker G2 30nm stands for Generation 2 of Samsung Green Products 1600 1 35V 1600 1 35V Sandybridge 2 socket system X the setting adjusted in system automatically without BIOS setting changes x BIOS Option BIOS setup of manufacturer available on INTEL EPSD and supermicro boards BIOS 1066 1 35V Px iets 4 pf wm ot re ee ee eee ee ee ee eee Samsung Semiconductor Europe2. dramatically Hence before testing and evaluating SSD performance make figures and the calculated total GB per Day values to a get a feeling on each SSD sure to have written to all cells once This is called preconditioning of an SSD capabilities The bandwidth and perfromance is the 2nd aspect to look into and to get sustained results last the latency TBW Total Bytes Written is a key parameter for SSD The data is provided above for the life cycle and a guidance of total GB per day Nothing is more critical to SSD than the write behavior of your application TBW figures are prelimianry and will be updated by the end of the year 2012 subject of change please ask your Samsung sales representative for the latest information sustained after pre conditioning 100 4KB random write IOPS 24 hrs x 7 days x 365 days the higher the SSD density the higher the the write performance the up to value refers to this aspect and reflects the performance of the highest density Number of time that SSD capacity could be writteb in Random Writes per day for the specified period time given till TBW is consumed Samsung SSD Ver 13 March 13 all data are subject to changes without notice please conatct Samsung channel partner in your region for latest update Samsung Semiconductor Europe activated Samsung DDR3 DRAM offering for Server Green memory Generation 2 G2 30nm class Samsung MEMORY Green DDR3 activated Target Applic
3. 2V 128KB Single Port 497 435 MB s Dual Port 902 740 MB s 4KB Single Port 72 KIOPS Dual Port 101 5 KIOPS 8KB Single Port 50 KIOPS Dual Port 81 KIOPS AKB Single Dual Port 30 KIOPS 60KIOPS 8KB 90 150 KIOPS SSD approach recommendation 1 Pre selection based on needs on TBW and GB writes per day and targte application guide 2 Perform a proof of concept 3 Implement concept in bigger scale 4 Keep monitoring the smart IDs 520 330 MB s 530 420 MB s 500 400 MB s 60KIOPS TBD 70 KIOPS 60 KIOPS Performance 1 5 2 5 2 5 KIOPS 8 5 11 5 11 5 KIOPS 5 5 11 11 11 KIOPS Retention Retention refers to the time that the cells in SSD are capable of keeping the data before a refresh needs to take place virgin SSD has up to 10 f years retention based on the behavior of Flash cell built upon The more the Flash cell are written the higher the cell wears off and and the leakage current increases by the consumption of TBW the retention declines to 3 months Endurance life cycle SSD is based on NAND Flash cells The writting of cells is a destructive process The more the cell is written the more the cell is damged The leakage current increases retention decreases If the SSD and so the cells are connected to power 24 7 as in the case of server implementation could be assumed the firware of SSD could be adjusted on increasing endurance while the refresh of cells can be adjusted SS
4. D vs HDD Smart ID amp Life cycle The key advantage of SSD is its feature of having a forecastable life cycle Lacking mechanical parts its life cycle depends strongly on writing of data which can be tracked by electrical commands the so called SMART IDs Our Magicin Tool for both windows and Linux platforms support you to track the amouth of data you write on SSD If you track this over a period o time in your environment the extrapolation will provide you with an exact figure of the life cycle of your SSD the TBW figures should provide you an overview of expected life cycle Over provisioning The amount of the data intented to be written on SSD is not the same amount of data written on SSD The background is mainly the basic characteristics of Flash Writing is done page wise but deleting happens on a block Any SSD needs free blocks to be able to write effectively A designated physical area of the SSD which is not used for logical data allocations called over provisioning helps the controller to allow for a broader write bandwidth the higher the over provisioning the better the write perfromance witha trade off of losing blocks for physical data Virgin SSD Preconditioning a virgin SSD has a very high write bandwidth As SSD as HDD replacement SSD is not a direct HDD replacement The writing soon as all cells are written to once the bandwidth decreases partially behavior of your application is key to a right choice of SSD Check the TBW
5. Samsung Enterprise SSD 2013 Samsung OEM offering Availability Feb 13 SATA 6 0Gbps Read intensive lt 10 Write content amp Streaming Servers Low cost Sequential Read Performance now SATA 6 0Gbps 20 30 write Boot Drive Scratch Drive Meta data HPC Web server Random read perfromance Feb 13 960GB March 13 SATA 6 0Gbps 40 50 write extensive read and Write cache Data warehousing high edurance optimized on request SAS 6G Dual port Interface 60 70 write Target Application 8 pplicat Tier 0 Storage servers recommendations perferct cost sensitive entry level Low endurance a perfect trade off between cost and edurance for design in Mid range endurance High rentention low latency high Endurance and high performance High rentention MLC based SSD with Storage Firmware Part numbers Capacities MZ7TD120HAFV OOODA MZ7TD240HAFV OOODA MZ7TD480HAGM MZ7PD120HAFV MZ7PD240HAFV OOODA MZ7PD480HAGM MZ7WD120HAFV MZ7WD240HAFV MZ7WD480HAGM MZ7WD960HAGP MZ6ER100HAFV 00003 00003 MZ6ER200HAG M 00003 MZ6ER400HAGL 00003 MZ6ER800HAGL 00003 120 GB 240 GB 240 GB 240 GB 480 GB 200 GB 400 GB 800 GB relative price ball park per GB 100 113 138 338 Retention virgin SSD by guaranteed endurance 10 years 3 months 10 years 3 months 10 years 3 months 10 years 3 mo
6. ation ECC REG standard height HPC Cloud 2 amp more socket servers normal height of min 1U no foot print and space limitations BIG DATA In Memory mainly for 4 amp more socket servers mainly 3 DPC high density while keeping up memory bandwidth Small adder vs normal REG DIMMs It makes sense for usage of starting 2 DPC or higher population due to higher bandwidth Please note slightly higher power consumption than RDIMM ECC UNB ECC UNB SO DIMM ECC UNB SODIMM Not a standard product Project based support close alignment Dedicated server Hosting with Samsung sales required 1 socket systems 1600 speed is not needed ECC UNB Standard Product Speed compatibility 1600 speed is downward compatible with 1333 1066 and 800 The speed is automatically identified by system BIOS and adjusted in the system based on the number of DIMMs per Channel DPC The speed adjustment is explained in the table above for each module category Beyond the system adjustments some platforms offer the option of speed enforcing with BIOS to a desired level normally lower Voltage compatibility 1 35V modules are upward compatible with 1 5V i e a 1 35V Module will also work with a 1 5V setting Many systems of INTEL EPSD Supermicro etc allow the users to enforce and adjust the memory voltage on BIOS level In this sense it is advisable to source 1 35V modules since they allow you to use them also at 1 5V The voltage is a
7. nths Warranty logical OR A 3 years OR TBW 5years OR TBW 5years OR TBW 5years OR TBW TBW Total Bytes Written allowed 1 100 64KB Seq Write 2 100 4KB Rand Write 3 100 8KB Rand Write 415 TB 2 PB 4 PB 8 PB 8 PB 16 PB 105TB 500 TB 1 PB 2 PB 3 5 PB 7 PB Seq Write 64KB 415 GB 2 TB 4 TB 8 TB 8 TB 16 TB estimated allowed TBW per day i Ran Write 4KB 100 GB 500 GB 1 TB 2 TB for a life time of 3 years Ran Write 8KB 3 5 TB 7 TB WPD random Sequencial write work load per day z 0 6 2 5 3 years 1 4 5 years 2 8 5 years 5 12 5 years Latency Random Read write 0 28 ms 0 11 ms 0 13 ms 0 08 ms 0 13 ms 0 08 ms Controller MDX SATA 6 0G MDX SATA 6 0G MDX SATA 6 0G RDX SAS Dual Port 12 0G NAND 21nm 64Gb TLC 21nm 64Gb MLC 21nm 64Gb MLC 21nm 64Gb Ep MLC Form Factor 2 5 7mm thickness 2 5 7mm thickness 2 5 7mm thickness 2 5 15mm thickness Data loss Protection None None Yes Tantal Cap Yes Super Capacitor Over Provisioning 7 7 7 28 Smart ID read out and setting Yes Yes Yes None Magician Tool Windows amp Linux Power Target Typ Active Write Min idle Seq Read Write 64k Ran Read 4k Ran Write 4k 3 6W 0 3W 3 4W 0 3W 3 0W 0 3W OW 4W 5V 1
8. utomatically identified by the system BIOS and adjusted in the system based on the number of DIMMs per Channel DPC Sourcing recommendation In order to reduce the amount of part numbers consequently reducing the inventory level and increasing the flexibility Samsung recommends to generally use the 1600 1 35V parts These parts come with no adder or premium to other voltage and speed options and they are downwards compatible through BIOS setting to the desired speed and voltage seeting of your application coampare with the table on the right Ver 13 Feb 2013 for max 2TB in Westmere EX 4 socket needs 64 units runs at 800 32GB adpot Load reduced DIMM Modules fro Sandybridge 4 socket boards Push product highest flexibility parity reached with 2x8GB 16GB 2 Mainstream highest volume and availability oti De Te pe lle Pee oe e fo LPP EL oe e ase aw ersan all data are subject to changes without notice please conatct Samsung channel partner in your region for latest update nominal speed and voltage Syteme Behavior Intel Xeon E5 max population DIMM Channel oa c ae w w J nzPneneZea gt 2 c9 e 3 gt a M M M N e u Of a O E g eee8 e882 2 E p FEB FE a fe e K o Py Sanog o ofF gt OES 2 So ao wo e a os A Ba Q o SF wm o V 6 6 ed c gt X gt r a et a re 2 9 og O a faa 5 5 IEA M393B4G70BM0 YH9 ox M393B1G73BHO YKO
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