Kingston Technology ValueRAM 24GB DDR3-1333
Contents
1. 8 Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 On Die Termination using ODT pin e On DIMM thermal sensor Grade B e Average Refresh Period 7 8us at lower than TCASE 85 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset Continued gt gt e PCB Height 1 180 30 00mm double sided component kingston com Document No VALUERAM1178 001 A00 05 03 12 Page 1 continued MODULE DIMENSIONS Units millimeters ValueRAM RE cO cO 00 ND hm LO ES Do H RO SO D N N N e E e DA N ei gt E i as LO D ne le 30 00 AN OR 29 60x4 y 24 80x2 gt 21 80x2 18 80x2 E a 7 15 80x2 d L R 0 65 MAX YPICAL 1 00x2 a 8 00x2 L 3 80 2 30x2 a 0 000 1 50 b 0 10 gt CHAMFER 0 50 X 45 DEG 4 PLACES CODO C LO LO CIEN Cs Co EN oe a a kingston com Document No VALUERAM1178 001 A00 Page 22. Kingston ime Cann O G Y Memory Module Specifications Value i KVR13LR9D4K3 241 24GB 8GB 1G x 72 Bit x 3 pcs PC3 10600 CL9 Registered w Parity 240 Pin DIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM s KVR13LR9D4K3 241 is a kit of three 1G x 72 bit CL IDD 9 cycles 8GB DDR3L 1333 CL9 SDRAM Synchronous DRAM low Row Cycle Time tRCmin 49 5ns min voltage registered w parity 2Rx4 ECC Intel Compatibility Refreshto Acive metres 160ns min Tested memory modules based on thirty six 512M x 4 bit Command Time tRFCmin FBGA components per module Total kit capacity is 24GB The Row Active Time tRASmin 36ns min SPDs are programmed to JEDEC standard latency DDR3 1333 Maximum Operating Power 1 35V 5 478 W timing of 9 9 9 at 1 35V and 1 5V This 240 pin DIMM uses 1 50V 6 546 W gold contact fingers The electrical and mechanical specifica UL Rating 94V 0 Hons are as 10HOWSE Operating Temperature 0 C to 85 C Storage Temperature 55 C to 100 C FEA EES Power will vary depending on the SDRAM and e JEDEC standard 1 35V 1 28V 1 45V and 1 5V 1 425V Register PLL used 1 575V Power Supply e VDDQ 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V e 667MHz fCK for 1333Mb sec pin e 8 independent internal bank e Programmable CAS Latency 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e Programmable CAS Write Latency CWL 7 DDR3 1333 e 8 bit pre fetch e Burst Length
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