Kingston Technology ValueRAM KVR1333D3LS4R9S/2G memory module
Contents
1. 1 180 80 00mm double sided component kingston com kingston TECHINOLOGY ei Value SPECIFICATIONS CL IDD 9 cycles Row Cycle Time tRCmin 49 5ns min Refresh to Active Refresh 110ns min Command Time tRFCmin Row Active Time tRASmin 36ns min Power Operating 1 35V TBD 1 50V TBD 94 V 0 0 C to 85 C 55 C to 100 C UL Rating Operating Temperature Storage Temperature Power will vary depending on the SDRAM and Register PLL used Continued gt gt Document No VALUERAM0962 001 A00 05 17 11 Page 1 continued ValueRAM MODULE DIMENSIONS TOLL OO units millimeters ND O ES oO cO P GE Hi a Se e 2 K E gt eae SS N S 3 D z 5 gt R S CO 30 00 O SE 20 60x4 24 Ba 21 80x2 e 18 80x2 15 80x2 J L R 0 65 MAX TYPICAL 11 00x2 L 8 00x2 3 80 S _ f 0 000 an L t g noeh CHAMFER 0 50 X 45 DEG 4 PLACES OOo CO LO LD DNN r GE D LO ro kingston com Document No VALUERAM0962 001 A00 Page 22. Memory Module Specifications KVR1333D3LS4R9S 2G 2GB 1Rx4 256M x 72 Bit PC3 10600 CL9 Registered w Parity 240 Pin DIMM DESCRIPTION This document describes ValueRAM s 256M x 72 bit 2GB DDR3 1333 CL9 SDRAM Synchronous DRAM low voltage registered w parity 1Rx4 ECC memory module based on eighteen 256M x 4 bit DDR3 1333 FBGA components The SPD is programmed to JEDEC standard latency DDR3 1333 timing of 9 9 9 This 240 pin DIMM uses gold contact fingers The electrical and mechanical specifications are as follows FEATURES e JEDEC standard 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V Power Supply e VDDQ 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V e 667MHz fCK for 1333Mb sec pin e 8 independent internal bank e Programmable CAS Latency 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e Programmable CAS Write Latency CWL 7 DDR3 1333 e 8 bit pre fetch e Burst Length 8 Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 e On Die Termination using ODT pin e On DIMM thermal sensor Grade B e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height
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