Infineon PC133 256MB
Contents
1. PC1600 PC2100 PC1600 PC2100 PC1600 PC2100 HYS72D16000GR HYS72D32001GR HYS72D32000GR HYS72D64000GR HYS72D128021GR 8 A 067100 Q4372 7 A 8 A 7 A 7 B 8 B 8 B 7 B 067100 067100 067100 067100 067100 067100 067100 067100 067100 04373 04375 04378 04508 04509 04510 04511 04743 04694 Module Organi Genera Compo Compo of Ranks Module Module Sales Speed Ordering Prod Green Density zation tion Organization Package on Module Height Speed Description No Code EOL EOL EOL EOL DRAM Modules 13 SomMpOW WVad 14 SO DIMM DDR 200 pin Module Organi Genera Density zation tion 128 MB 16Mx64 256M 32Mx64 256M 256M 64Mx64 512M 128Mx64 512M X Lead Free 16Mx16 16Mx16 32Mx8 32 Mx16 64 Mx8 TSOP TSOP FBGA TSOP FBGA 1 25 1 25 1 25 PC2100 PC2700 PC2100 PC2700 PC2700 PC2700 PC2100 PC2700 PC3200 PC2700 PC3200 PC2700 PC3200 PC2100 PC2700 PC3200 PC2700 PC3200 PC2700 PC2100 PC2700 PC2700 PC3200 PC2700 PC3200 PC2700 PC3200 PC2700 PC3200 HYS64D16001GDL HYS64D16000GDL HYS64D16000HDL HYS64D32020GDL HYS64D32020HDL HYS64D64020GBDL HYS64D64020HBDL HYS64D64020GDL HYS64D64020HDL HYS64D128021GBDL 6 HYS64D128021HBDL 6 B 7 B 6 B 6 C 6 C 7 B 6 B 5 B 6 C 5 C 6 C 5 C 7 B 6 B 5 B 6 C 5 C 6 C 7 A2. Dia 2333 PC133 2 2 2 PC133 3 3 3 PC133 2 2 2 PC133 3 3 3 PC133 2 2 2 MG 333 PC133 3 3 3 PC133 2 2 2 PC133 3 3 3 PC133 2 2 2 PC133 3 3 3 PC133 2 2 2 7 5 C2 Q67100 Q4091 HYS72V16301GR 7 C2 Q67100 Q4092 HYS72V32301GR 7 5 C2 Q67100 Q4094 7 5 D 067100 Q4479 HYS72V32300GR 7 D Q67100 Q4440 7 5 D 067100 Q447 HYS72V64300GR i 7 D 067100 Q4441 7 5 D Q67100 Q4725 HYS72V128321GR 7 D 067100 Q4726 5 D 067100 HYS72V128320GR den 297 Q4475 7 D Q67100 Q4439 HYS64V16220GDL 7 5 C2 Q67100 Q4342 7 5 D Q67100 Q4478 7 D Q67100 Q4363 HVS64V16200GDL 5 D Q67100 Q4472 HYS64V32220GDL LE 2 SC 7D 067100 04444 7 5 D 067100 Q44 HYS64V64220GBDL 2 7 D 067100 Q4501 EOL EOL EOL Organi Genera Compo Compo of Ranks Module Module Sales Speed Ordering Prod Green zation tion Organization Package on Module Height Speed Description No Code EOL EOL EOL Specialty DRAMs Nomenclature Reduced Latency DRAM RLDRAM HYB 18 RL 256 32 A IC 4 Example Speed Package Product Revision Organization Memory Density Memory Type 1 0 Voltage Prefix Reduced SE DRAM RLDRAM 4 250 MHz 5 200 MHz E FBGA Die Revision 32 xa 16 x16 256 256Mb RL Reduced Latency DRAM RLDRAM 18 18V VDDQ HYB Standard Prefix for Memory Components 250 MHz 8Mx32 HYB18RL25632AC 200 MHz 5 2 5 V 1 8V VDDQ 250 MHz 4 16 M x 16 HYB18RL25616AC 200 MHz 5
3. 256 MB HYC3N2560NO00AA1AA More detailed Information on Memory Products is available On our Internet websites www infineon com memory and www infineon com memory flash Datasheets Simulation models Memory Spectrum PDF version Brochures PDF version Edition 2004 April Published by Infineon Technologies AG St Martin Strafe 53 D 81669 M nchen Infineon Technologies AG 2004 All Rights Reserved Please note The information in this document is subject to change without notice The information herein describes certain components and shall not be considered as a guarantee of characteristics Terms of delivery and rights to technical change reserved We hereby disclaim any and all warranties including but not limited to warranties of non infringement regarding circuits descriptions and charts stated herein Infineon Technologies is an approved CECC manufacturer Information For further information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide www infineon com Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest Infineon echnologies office nfineon Technologies components may only be used in ife support devices or systems with the express written approval of Infineon
4. 6 A 6 B 5 B 6 B B 067100 05179 067100 05187 Now 067100 Q4531 067100 Q4670 067100 Q1763 2004 067100 05078 2004 067100 04454 067100 Q4667 Now Q67100 Q5227 Q67100 Q1767 2004 Q67100 Q1769 Q67100 Q4831 2 Q67100 Q1699 Q67100 Q4680 Q67100 Q4681 Now Q67100 Q1193 Q67100 Q1450 2004 Q67100 Q1702 Q67100 Q4835 3Q04 Q67100 Q4663 Q67100 Q4744 Now Q67100 Q1774 Q67100 Q1783 Q67100 Q1423 Now Q67100 Q1698 Q67100 Q1416 Now Q67100 Q1694 Q67100 Q1028 Now Q67100 Q1695 Compo Compo of Ranks Module Module Sales Speed Ordering Prod Green anization Package on Module Height Speed Description No Code X DDR2 Modules Nomenclature DDR DDR2 Modules Unbuffered DIMM Registered DIMM 240 pin and SO DIMM 200 pin HYS 64 D 32 2 2 o G D IE 6 A Example E Part Number Extension Speed Power Module Family Package Type Designator Number of Memory Ranks Designator Memory Density per DQ Power Supply Data Width Prefix Component Die Revision Indicator 8 PC1600 2 2 2 DDR200 7 5 PC2100 2 5 3 3 DDR266B 7 PC2100 2 3 3 DDR266A 7F PC2100 2 2 2 DDR266 6 PC2700 2 5 3 3 DDR333 5 PC3200 3 3 3 PC2 3200 3 3 3 DDR400 DDR2 400 3 7 PC24300 4 4 4 DDR2 533 3 PC2 5300 4 4 4 DDR2 667 L Low Power none Standard Power U Unbuffered DIMM TSOP based for DDR FBGA based for DDR2 R Registered DIMM TSOP based for
5. HYS64V16300GU HYS64V16302GU HYS72V16300GU HYS64V32220GU HYS64V32300GU HYS72V32220GU HYS72V32300GU HYS64V64220GU HYS72V64220GU 7 5 C2 Q67100 Q4079 7 C2 067100 Q4080 7 5 D 067100 Q4466 7 D 067100 Q4442 7 5 C2 Q67100 04085 7 C2 Q67100 Q4086 7 5 C2 067100 04082 7 C2 067100 04083 7 5 D Q67100 Q4359 7 D 067100 Q4361 7 5 C2 067100 04088 7 C2 067100 Q4089 7 5 D Q67100 Q4362 7 D 067100 Q4360 7 5 D 067100 Q4390 7 D Q67100 Q4389 7 5 D 067100 04387 7 D 067100 04388 Compo Compo tof Ranks Module Module Sales Speed Ordering Prod Green ganization Package on Module Height Speed Description No Code EOL EOL EOL EOL EOL EOL DRAM Modules 19 SompoW WVYd 20 Registered SDR DIMM 168 pin Module Organi Genera Compo Compo of Ranks Module Module Sales Speed Ordering Prod Green Density zation tion Organization Package on Module Height Speed Description No Code 1 5 EOL 128M 16Mx8 es 128M 32Mx4 32Mx72 Ba 256M 32Mx8 256M 64Mx4 128Mx72 256M 128Mx4 EOL End of Life SO DIMM SDR 144 pin Module Density 128M 8Mx16 256M 16Mx16 128 MB 16 Mx 64 32Mx64 256M al 256M 32Mx8 EOL End of Life 16Mx16 TSOP TSOP TSOP TSOP TSOP stack TSOP TSOP TSOP FBGA 1 2 1 5 1 5 1 5 1 5 1 00 1 00 1 00 1 15 PC133 3 3 3 PC133 2 2 2 lee 33 Calg is sese PC133 2 2 2
6. 00 ax 45 44 50 77 01 Finland FIND nfineon Technologies Nordic OY Visitor s Address Linnouitustie 4A P O Box 276 FIN 02601 Espoo 2 3 58 10 680 84 00 Fax 3 58 10 680 84 01 France CF nfineon Technologies France SAS 39 47 Bd Ornano 93527 Saint Denis CEDEX 2 2 33 1 48 09 72 00 Fax 33 1 48 09 72 90 India nfineon Technologies ndia Pvt Ltd 10th Floor Discoverer Building nternational Technology Park Whitefield Road Bangalore 560 066 India 91 80 8 41 00 17 18 Fax 91 80 8 4100 12 Ireland nfineon Technologies Ireland Ltd 69 Fitzwilliam Lane Dublin 2 35 31 79 99 500 Fax 35 31 79 99 501 Israel GID Nisko Ltd 2A Habarzel Street Tel Aviv 69710 9 72 3 7 65 73 00 Fax 9 72 3 7 65 73 33 Italy CI Infineon Technologies Italia S r l Via Vipiteno 4 20128 Milano 39 022 52 04 1 Fax 39 022 52 04 43 95 Japan CID Infineon Technologies Japan K K Takanawa Park Tower 8F 9F 12F 17F 3 20 14 Higashi Gotanda Shinagawa ku Tokyo 141 0022 81 3 54 49 64 1 Fax 81 3 54 49 64 01 Korea Infineon Technologies Korea Co Ltd Room No 2 amp 3 gth floor Daelim Acrotel Building 467 6 Dokock Dong Kangnam Gu Seoul Korea 135 971 82 23 46 00 900 Fax 82 23 46 00 901 902 Malaysia Infineon Technologies M SDN BHD Krystal Point II 1 4 11 12 Lebuh Bukit Kecil 6 11900 Bayan Lepas Penang Malaysia 60
7. 29 299 01 79 Si PC3200 5 B 067100 Q1780 PC2700 6 B 067100 01426 HYS64D128320HU Now X PC3200 5 B 067100 01427 1GB ECC PC2100 HYS72D128020GU 7 A 067100 Q4658 Now PC2700 6 A 067100 Q4935 P HY D B N 128Mx72 sem same TSOP aen C2700 S72D128320GU 6 Q67100 Q1781 ow PC3200 5 B 067100 01782 PC2700 6 B 067100 Q1065 HYS72D128320HU Now X PC3200 5 B 067100 Q1064 X Lead Free DRAM Modules SomMpOW WVYd 12 Registered DDR DIMM Reduced Height 184 pin Module Density 12 X AULE 16 Mx72 128M 128M 256 M 32Mx72 256M 64Mx72 256M 256M 128Mx72 512M 256Mx72 512M Lead Free 16Mx8 32Mx4 32Mx8 32Mx8 64Mx4 32Mx8 128Mx4 64Mx4 128Mx4 64Mx8 256Mx4 128Mx4 TSOP TSOP TSOP FBGA TSOP FBGA FBGA TSOP stack FBGA TSOP FBGA FBGA TSOP stack FBGA 1 1 2 1 2 1 125 1 2 1 125 1 125 1 2 1 2 1 2 1 125 1 125 1 2 1 2 PC2100 PC2100 PC2100 PC2100 PC2700 PC3200 PC2700 PC3200 PC2100 PC2100 222 PC2100 PC2700 PC3200 PC2700 PC3200 PC2100 PC2700 PC3200 PC2700 PC3200 PC2100 PC2100 222 PC2100 PC2700 PC2700 PC2100 PC2100 PC2700 PC3200 PC2100 PC2700 PC3200 PC2100 PC2100 PC2700 PC3200 HYS72D16500GR HYS72D32501GR HYS72D32501HR HYS72D32500GR HYS72D32300GBR HYS72D64500GR HYS72D64300GBR HYS72D64320GBR HYS72D1285 21GR HYS72D128320
8. 4 HYS72T256020GR 3 7 A Q67100 Q1918 256Mx72 3Qo4 PC2 3200 3 3 3 5 A 067100 Q1735 1G 256Mx4 PTFBGA68 1 3omm HYS72T256000GR PC2 4300 4 4 4 3 7 A Q67100 Q1736 PC2 3200 3 3 3 5 A Q67100 01737 512Mx72 1G 512Mx4 SDFBGA 2 30mm HYS72T512022GR 1005 PC2 4300 4 4 4 3 7 A 067100 01738 SO DIMM DDR2 200 pin Module Organi Genera Compo Compo of Ranks Module Module Sales Speed Ordering Green Density zation tion Organization Package jon Module Height Speed Description No Code 32Mx64 512M 32Mx16 PTFBGA84 64Mx64 512M 32Mx16 PTFBGA84 512M 128Mx8 SDFBGA 128 Mx 64 1G 64Mx16 PTFBGAg2 256Mx64 1G 256Mx8 SDFBGA 1 PC2 3200 3 3 3 5 A Q67100 Q1401 30mm HYS64T32000GDL PC2 4300 4 4 4 3 7 A Q67100 Q1402 5 A 067100 Q1404 3 7 A 067100 01405 PC2 3200 3 3 3 30mm HYS64T64020GDL PC2 4300 4 4 4 PC2 3200 3 3 3 5 A Q67100 Q1692 30mm HYS64T128022GDL PC2 4300 4 4 4 PC2 3200 3 3 3 30mm HYS64T128020GDL PC2 4300 4 4 4 3 7 A Q67100 Q1691 5 A Q67100 Q1743 3 7 A Q67100 Q1744 5 A 067100 01745 3 7 A Q67100 01746 PC2 3200 3 3 3 30mm HYS64T256022GDL PC2 4300 4 4 4 3Qo4 3Q04 3Q04 4004 DRAM Modules 17 Se npow WVqd 18 SDR Modules Nomenclature SDR Modules Unbuffered DIMM Registered DIMM 168 pin and SO DIMM 144 pin HYS 64 V 32 GU L 6 A Example Part Number Extension Speed Power Module Family Designator Number of Memory
9. 46 44 77 66 Fax 60 46 41 48 72 New Zealand aD Siemens Components 300 Great South Road Greenland Auckland 64 95 20 30 33 Fax 64 95 20 15 56 Poland Siemens SP 2 0 0 ul Zupnicza 11 03 821 Warszawa 2 48 22 8 70 9150 Fax 48 22 8 70 9159 Portugal CPD Siemens S A OG Componentes Electronicos Rua Irmaos Siemens 1 Alfragide 2720 093 Amadora 2 3 51 21 417 85 90 Fax 3 51 21 417 80 83 Russia INTECH electronics ul Smolnaja 24a 1203 125 445 Moscow 70 95 4 5197 37 Fax 70 95 4 5186 08 Singapore Infineon Technologies Asia Pacific Pte Ltd 25 New Industrial Road KHL Building Singapore 536 211 65 68 40 07 32 Fax 65 68 40 0077 South Africa GA Siemens Components P O Box 3438 Halfway House 1685 Gauteng 427 11 652 2000 Fax 27 11 652 25 73 Spain CED Siemens S A Divisi n Componentes Ronda de Europa 5 28760 Tres Cantos Madrid 34 91 5 147154 Fax 34 91 5 14 70 13 Sweden CED Infineon Technologies Nordic AB P O Box 46 16493 Kista 46 8 7 03 59 00 Fax 46 8 7 03 59 01 Switzerland CCH Infineon Technologies Switzerland AG Badenerstra e 623 P O Box 1570 8048 Ziirich 41 1 4 97 80 40 Fax 41 1 497 80 50 Taiwan Infineon Technologies Taiwan Ltd 12F 1 No 3 2 Yuan Qu Street Nan Kang Software Park Twain 115 R O C 8 86 2 2655 75 00 Fax 8 86 2 2655 75 01 8 Turkey Siemens Sanayi ve Ti
10. Q67100 Q67100 Q67100 Q67100 Q4355 Q4357 Q4356 Q4358 T FBGA 144 Now Specialty DRAMs 21 SWVAQ Ajermeds 22 Nomenclature Graphics RAM and Mobile RAM HYB 25 D 128 32 L 3 3 Example L Speed Power Down Current Package Product Revision Interface Organization Memorv Densitv Memorv Tvpe Supplv Voltage Prefix WA 2 5 2 8 3 0 3 3 3 6 4 5 75 450 MHz 400 MHz 350 MHz 333 MHz 300 MHz 275 MHz 222 MHz 200 MHz 133 MHz 125 MHz Low Power Down Current Sul nal al 6 ll Die Revision 80 16 32 128 256 512 18 25 39 HYB HYE FBGA TSOP TSOP Lead and Halogen Free FBGA Lead and Halogen Free LV TTL Interface Matched Impedance 2 5 V VDDQ Matched Impedance 1 8 V VDDQ x8 X16 x32 128 Mb 256 Mb 512 Mb DDR SDRAM or Graphics RAM Low Power SDRAM Mobile RAM 1 8 VVDD 2 5 VDD 1 8 VVDD or 2 5 VDDQ 3 3 VDD 3 3 VDDQ Standard Prefix for Memory Components Prefix for Extended Temperature Version 25 C 48590 Sell RAM Lead and Halogen Free Mobile RAM Power Supply es Sales Description Speed No Ordering Code Core 2 5 V 2 5 V 1 8V 2 5V 3 3V 1 8V 2 5V 3 3V 1 8V Lead and Halogen Free 333 MHz 300 MHz HYB25D128323C 275 MHz HYB25D128323CL HYB25D128323C 222 MHz HYB25D128323CL 166 MHz HYB25D256160BT 200 MHz 200 MHz HYB25D256161CE 250 MHz 500 MHz 450 M
11. Technologies if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body or to support and or maintain and sustain and or protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered ge 27 INFINEON TECHNOLOGIES SALES OFFICES WORLDWIDE Australia US Siemens Ltd 885 Mountain Highway Bayswater Victoria 3153 2 61 3 97 212111 Fax 61 3 97 217275 Austria CAD nfineon Technologies Villach AG Sales Office Austria AG Operngasse 20b 31 1040 Wien 43 1 5 87 70700 Fax 43 1 5 87 70 70 20 Belgium Netherlands NL DD nfineon Technologies Holding B V Sales Division Westblaak 32 3012 KM Rotterdam 2 31 10 2 17 68 00 Fax 31 10 2 17 68 19 Brazil nfineon Technologies South America Ltda Av Mutinga 3800 pr dio 3 05110 901 Sao Paulo SP 55 11 39 08 25 64 Fax 55 11 39 08 27 28 Canada nfineon Technologies Corporation 340 March Road Suite 301 Kanada Ontario K2K 2E2 B 1 613 5 91 3835 Fax 1 613 5 91 8954 China CCN nfineon Technologies Beijing Representative Office 12th Floor Quantum Plaza No 27 Zhichun Road Haidian District Beijing 100083 People s Republic of China 86 10 82
12. and Halogen Free ROHS compliant Product Revision Die Revision Product Variation o Standard Product Organization 40 X4 80 x8 16 X16 Memory Density 128 128Mb 256 256 Mb 512 512 Mb 1G 1024 Mb Memory Type S SDR Single Data Rate SDRAM D DDR Double Data Rate SDRAM T DDR2 Double Data Rate 2 SDRAM Supply Voltage 39 33V 25 2 5 V 18 1 8 V Prefix HYB Memory Components ROHS Restriction Of Hazardous Substances DDR Components XX Lead and Halogen Free 2Q04 Now 2Q04 Now 2Q04 Now Now Now Now Now Now Now Now Now Now 2Q04 Now 2Q04 2Q04 Now DDR266A 2 3 3 HYB25D128400AT 7 Q67100 04309 32Mx4 TSOP 66 400 mil DDR333 2 5 3 3 HYB25D128400CE 6 067100 01455 DDR266A 2 3 3 HYB25D128800AT 7 067100 04311 16Mx8 TSOP 66 400 mil DDR333 2 5 3 3 HYB25D128800CE 6 067100 01459 DDR266A 2 3 067100 0431 33 HYB25D128160AT 2 l SE 8Mx16 TSOP 66 400 mil DDR333 2 5 3 3 6 067100 Q5044 DDR333 2 5 3 3 HYB25D128160CE 6 067100 01458 DDR266A 2 3 3 7 Q67100 04587 HYB25D256400BT 64Mx4 TSOP 66 400 mil DDR266 2 2 2 7F 067100 04880 DDR266A 2 3 3 HYB25D256400CE 7 067100 05049 DDR 2 5 3 6 067100 0458 2 9 205 HYB25D256800BT 2 452 DDR400 3 3 3 5 067100 04275 32Mx8 TSOP 66 400 mil DDR333 2 5 3 3 HYB25D256800CE 6 Q67100 05051 DDR333 2 5 3 3 HYB25D256800CEL 6 067100 01753 DDR400 3 3 3 HYB25D256800CE 5 067100 05180 DDR266A 2 3 3 7 067100 Q4593 DDR333 2 5 3 3 HYB25D25616
13. x16 Memory Density 16 16 Mb 32 32 Mb Memory Type B CellularRAM PSRAM Supply Voltage 18 18V VDD 1 8 3 0 V VDDQ L Prefix HYE Extended Temperature e S er lt oO 79 2 7 TM CellularRAM mat Town mer REESEN RER 16 Mb 85 ns 85 Q67100 05098 VFBGA 48 HYE18P16161AC 2 Async 1Mx16 SRAM 7ons 70 Q67100 05099 VFBGA 48 2Q04 X 7ons HYE18P16161AW 70 067100 Q5101 Wafer KGD 32 Mb 85 ns 85 Q67100 05103 VFBGA 48 HYE18P 32161AC Async 2Mx16 SRAM 7ons 70 Q67100 Qs5104 VFBGA 48 2Q04 X 7ons HYE18P32161AW 70 067100 05106 Wafer KGD 32 Mb 80 MHz 70ns 12 5 Q67100 Q1802 VFBGA 54 SRAM HYE18P32160AC Sync 2Mx16 Flash 66 MHz 85 ns 15 Q67100 05108 VFBGA 54 2Q04 X 66 MHz 85 ns HYE18P32160AW 15 Q67100 Qs5110 Wafer KGD X Lead Free 24 Flash Nomenclature TwinFlash Components HYF 33 DS 512 80 o A T C Example Temperature Range Package Process Technology Product Variation Organization Memory Density Memory Type Supply and I O Voltage Prefix TwinFlash Components 80 512 1G DS 33 31 HYF Commercial 0 C 70 C TSOP I 48 P 1220 0 5 170 nm Process Technology 170 nm Process Technology Enhanced Write Speed Standard Product Tape amp Reel Packing Stacked Die Tape amp Reel Packing x8 512 Mb 1024 Mb Data SLC TwinFlash Single Level Cell 2 bit cell 3 3V core and 3V I O 3 3 V core and 1 8 V I O Flash Memory Components De
14. 0BT 6 067100 04592 16 Mx 16 TSOP 66 400 mil DDR400 3 3 3 5 067100 04277 DDR333 2 5 3 3 6 067100 Q5045 HYB25D256160CE DDR400 3 3 3 5 067100 05182 DDR266A 2 3 3 7 067100 04615 DDR333 2 5 3 3 HYB25D256400BC 6 067100 04614 64Mx4 FBGA 60 8x12 mm DDR400 3 3 3 5 067100 Q1071 DDR333 2 53 6 Q67100 Q4764 HYB25D256400CC DDR400 3 3 3 5 067100 01418 DDR266A 2 3 3 7 Q67100 04596 HYB25D256800BC DDR333 2 5 3 3 6 Q67100 04595 32Mx8 FBGA 60 8x12 mm DDR333 2 5 3 3 HYB25D256800CF 6 067100 Q4443 DDR333 2 5 3 3 6 067100 Q4767 HYB25D256800CC DDR400 3 3 3 5 067100 01419 DDR266A 2 3 3 7 067100 045 HYB25D256160BC 2 16Mx16 FBGA 60 8x12 mm DDR333 2 5 3 3 6 067100 Q4598 DDR333 2 5 3 3 _HYB25D256160CC 6 067100 04770 2004 Now XX 3 8 DRAM Components sjueuoduio WVYG DDR A HYB25D512400AT 7 067100 Q4413 Now 128Mx4 TSOP 66 400 mi DDR266A 2 3 3 danse HYB25D512400BE 7 Q67100 05202 Now XX 256Mx4 TSOP stack 400 mil DDR266A 2 3 3 HYB25D1G400BG 7 On request DDR266A 2 3 3 7 067100 Q4412 2 HYB25D512800AT Now 64Mx8 TSOP 66 joo mi PSR 25 33 Beenie U DDR333 2 53 3 6 067100 05205 HYB25D512800BE Now XX DDR400 3 3 3 067100 05204 DDR266A 2 3 3 HYB25D512160AT 067100 04411 Now DDR333 2 5 3 3 HYB25D512160AT 067100 04416 Now 32Mx16 TSOP 66 400 mil fex rex sti a 067100 05209 DDR333 2 5 3 3 2 HYB25D512160BE Now XX DDR400 3 3 3 5 Q67100 05208 DDR333 2 5 3 3 6 067100 01661 128Mx4
15. 0mm HYS64T128020GU 2004 PC2 4300 4 4 4 3 7 A Q67100 Q1396 1GB ECC PC2 3200 3 3 3 5 A Q67100 Q1398 128Mx72 512M 64Mx8 PTFBGA60 2 30mm HYS72T128020GU 2004 PC2 4300 4 4 4 3 7 A Q67100 Q1399 PC2 3200 3 3 3 5 A Q67100 Q1739 256Mx64 1G 128Mx8 PTFBGA68 2 30mm HYS64T256020GU 3Q04 PC2 4300 4 4 4 3 7 A Q67100 Q1740 2GB ECC PC2 3200 3 3 3 5 A 067100 Q1741 256Mx72 1G 128Mx8 PTFBGA68 2 30mm HYS72T256020GU 3004 PC2 4300 4 4 4 3 7 A Q67100 Q1742 Registered DDR2 DIMM 240 pin Module Organi Genera Compo Compo of Ranks Module Module Sales Speed Ordering Prod Green Density zation tion Organization Package jon Module Height Speed Description No Code Hr 200 A 067100 Q1 mil 32Mx72 256M 32Mx8 PTFBGA60 1 2 ze HYS72T32000GR 2 4 Greg 4300 4 4 4 3 7 A Q67100 c PC2 3200 3 3 A Q67100 Q171 64Mx4 PTFBGA60 1 30mm 2 325 HYS72T64001GR 2 7 7 PC2 4300 4 4 4 3 7 A 067100 01716 256M 3004 PC2 3200 3 3 3 5 A 067100 01367 64Mx72 32Mx8 PTFBGA6o 2 30mm HYS72T64020GR PC2 4300 4 4 4 3 7 A Q67100 Q1366 PC2 3200 3 3 A 067100 01378 512M 64Mx8 PTFBGA60 1 30mm 2 222 HYS72T64000GR 2 2 id 2004 PC2 4300 4 4 4 3 7 A Q67100 Q1379 PC2 3200 3 3 3 5 A Q67100 Q1380 128 Mx4 PTFBGA60 1 30mm HYS72T128000GR PC2 4300 4 4 4 3 7 A Q67100 Q1381 128Mx72 512M 2004 PC2 3200 3 3 3 5 A 067100 01382 64Mx8 PTFBGA60 2 30 mm HYS72T128020GR PC2 4300 4 4 4 3 7 A 067100 01383 PC2 3200 3 3 3 HYS72T256220GR 5 A 067100 01891 512M 128Mx4 PTFBGA60 2 30 mm PC2 4300 4 4
16. 35 6118 Fax 86 10 82 35 54 74 nfineon Technologies Hong Kong Ltd Hong Kong Office 302 Level 3 Festival Walk 80 Tat Chee Avenue owloon Tong Hong Kong 852 28 320500 Fax 852 28 27 97 62 nfineon Technologies No 8 Lane 647 Songtao Road Zhangjiang Hi Tech Park Pudong Shanghai China 2 86 21 38 95 37 08 Fax 86 21 50 80 62 04 Germany CDD nfineon Technologies AG Siemensstra e 31 33 71254 Ditzingen Stuttgart 49 71 56 179 19 10 Fax 49 71 56 179 19 90 and representative offices www infineon com nternational Trade Shanghai Co Ltd nternational Trade Shanghai Co Ltd Germany CDD nfineon Technologies AG Volklinger Stra e 4 40219 D sseldorf 49 211 2095 490 Fax 49 2 11 20 95 49 60 nfineon Technologies AG Naegelsbachstra e 26 91052 Erlangen S 49 91 31 97 00 1 0 Fax 49 91 31 97 00 99 nfineon Technologies AG Paderborner Stra e 1 30539 Hannover 2 49 511 87 65 620 Fax 49 5 11 87 65 62 90 nfineon Technologies AG Rosenheimer Stra e 116 81669 M nchen 49 89 23 40 Fax 49 89 23 42 46 94 nfineon Technologies AG Memory Products Sales Gustav Heinemann Ring 212 81739 M nchen 49 89 23 42 3801 Fax 49 89 23 42 04 90 nfineon Technologies AG Siidwestpark 65 90449 N rnberg 49 911 2 52930 Fax 49 911 2 52 93 93 Denmark nfineon Technologies Nordic A S Herlev Hovedgade 201A DK 2730 Herlev 45 44 50 77
17. 64MB 128MB 256MB 512MB 1GB 2 GB 4GB Unbuffered DDR IL D Registered DDR Registered DDR Reduced Height SO DIMM DDR Unbuffered DDR2 fa E a Registered DDR2 SO DIMM DDR2 EB 4 64MB 128MB 256 MB 512MB 1GB 2 GB A GB Unbuffered SDR E Registered SDR SO DIMM SDR 64Mb 128Mb 256 Mb 5 2Mb 16Gb 2 Gb 4 Gb TwinFlash T 64MB 128MB 256 MB 512MB 1GB 2 GB 4GB MultiMediaCards SD Cards RLDRAM and CellularRAM are registered trademarks of Infineon Technologies AG TwinFlash is a trademark of Infineon Technologies AG based on Saifun NROM technology Content DDR Components 5 0 DDR2 Components 7 SDR Components 8 DRAM Modules 9 20 DDR Modules 10 14 DDR2 Modules 15 17 SDR Modules 18 20 Specialty DRAMs 21 24 Sjuauodwo WVYG DRAM Components Nomenclature DRAM Components HYB 25 D 128 80 o l 6 Example Speed Performance 3 DDR2 667 4 4 4 DDR2 3 7 DDR2 533 4 4 4 DDR2 5 DDR2 400 3 3 3 DDR400B 3 3 3 DDR2 DDR 6 DDR333 2 5 3 3 PC166 3 3 3 DDR SDR 7 DDR266A 2 3 3 PC133 2 2 2 DDR SDR 7F DDR266 2 2 2 DDR 75 DDR266B 2 5 3 3 PC133 3 3 3 DDR SDR 8 DDR200 2 2 2 PC100 2 2 2 DDR SDR Power none Standard Power L Low Power Product Package FBGA Contains Lead T TSOP 400 mil Contains Lead E TSOP 400 mil Lead and Halogen Free ROHS compliant F FBGA Lead and Halogen Free ROHS compliant G TSOP stack Lead
18. 7600 Printed in Germany WS 04045 Z amp P 2003091 This datasheet has been downloaded from www DatasheetCatalog com Datasheets for electronic components
19. C2 3200 3 3 3 DDR400 DDR2 400 3 7 PC24300 4 4 4 DDR2 533 3 PC2 5300 4 4 4 DDR2 667 n Low Power none Standard Power U Unbuffered DIMM TSOP based for DDR FBGA based for DDR2 R Registered DIMM TSOP based for DDR FBGA based for DDR2 D SO DIMM TSOP based for DDR FBGA based for DDR2 BD SO DIMM FBGA based BR Registered DIMM FBGA based G Contains Lead H Lead Free ROHS compliant E Lead and Halogen Free available on request ROHS compliant Product Variations o One Memory Module Rank 2 Two Memory Module Ranks Data Sheet Defined 16 16Mb 82 32 Mb 64 64 Mb 128 128 Mb 256 256 Mb D 2 5 V DDR Modules T 1 8 V DDR2 Modules 64 X64 Non ECC 72 x72 ECC HYS Standard Prefix for SDRAM based Memory Modules ROHS Restriction Of Hazardous Substances DRAM Modules SoMpPOW WYad DDR Modules Unbuffered DDR DIMM 184 pin Module Organi Genera Compo Compo of Ranks Module Module Sales Speed Ordering Green Density zation tion Organization Package jon Module Height Speed Description No Code 128 MB PC2700 6 B 067100 Q4940 PC3200 5 B 067100 05136 HYS64D16301GU Now 16Mx64 256M 16Mx16 TSOP 1 1 25 22700 GE Qoo CE PC3200 5 C 067100 Q1754 PC2700 6 C 067100 0 l HYS64D16301HU d uc Now X PC3200 5 C 067100 05188 kb Tee 16 Mx72 128M 16Mx8 TSOP 1 1 25 PC2100 HYS72D16000GU 7 A 067100 Q4367 Now PC2100 HYS64D32000GU 7 B 067100 Q4517 Now P
20. C2700 6 B 067100 Q4944 PC3200 5 B 067100 05081 HYS64D32300GU Now 32Mx64 256M 32Mx8 TSOP 1 1 25 PC2700 6 C 067100 05184 PC3200 5 C 067100 01755 PC2700 6 C 067100 Q4996 HYS64D32300HU Now X PC3200 5 C 067100 05189 256 MB ECC PC2100 7B 067100 Q451 HYS72D32000GU SE Now PC2100 222 7F B Q67100 Q5029 PC2700 6 B 067100 Q4946 PC3200 5 B 067100 Q4957 32Mx72 256M 32Mx8 TSOP 1 1 25 HYS72D32300GU Now PC2700 6 C 067100 Q1768 PC3200 5 C 067100 01756 PC2700 6 C 67100 8 d HYS72D32300HU Wy Q499 Now X PC3200 5 C 067100 Q5191 PC2100 HYS64D64020GU 7 B 067100 Q4521 Now PC2700 6 B 067100 Q4948 PC3200 5 B 067100 Q508 HYS64D64320GU a Now 64Mx64 256M 32Mx8 TSOP 2 1 25 PC2700 GC 067100 Q1449 PC3200 5 C 067100 01761 PC2700 GC 067100 Q5001 HYS64D64320HU Now X PC3200 5 C 067100 05190 12 MB ECC PC2100 7B 067100 04525 HYS72D64020GU Now PC2100 222 7F B Q67100 Q5030 PC2700 6 B 067100 Q4950 PC3200 5 B 067100 Q4958 64Mx72 256M 32Mx8 TSOP 2 125 HYS72D64320GU 2 Now PC2700 6 C 067100 Q1757 PC3200 5 C 067100 01762 PC2700 GC 067100 0 2 HYS72D64320HU d ERIT Now X PC3200 5 C 067100 05192 X Lead Free Unbuffered DDR DIMM 184 pin Module Organi Genera Compo Compo of Ranks Module Module Sales Speed Ordering Green Density zation tion Organization Package on Module Height Speed Description No Code PC2100 HYS64D128020GU Q67100 Q4656 Now PC2700 6 A 067100 04823 B HY D 6 B N 128Mx64 512M 64Mx8 TSOP 2 1 25 SAN SDE E
21. DDR FBGA based for DDR2 D SO DIMM TSOP based for DDR FBGA based for DDR2 BD SO DIMM FBGA based BR Registered DIMM FBGA based G Contains Lead H Lead Free ROHS compliant E Lead and Halogen Free available on request ROHS compliant Product Variations o One Memory Module Rank 2 Two Memory Module Ranks Data Sheet Defined 16 16Mb 82 32 Mb 64 64 Mb 128 128Mb 256 256 Mb D 2 5 V DDR Modules T 1 8 V DDR2 Modules 64 x64 Non ECC 72 x72 ECC HYS Standard Prefix for SDRAM based Memory Modules ROHS Restriction Of Hazardous Substances DRAM Modules 15 SoMpPOW WVaq Unbuffered DDR2 DIMM 240 pin Module Organi Genera Compo Compo of Ranks Module Module Sales Speed Ordering Prod Green Density zation tion Organization Package Jon Module Height Speed Description No Code PC2 3200 3 3 A Q67100 Q1386 32Mx64 512M 32Mx16 PTFBGA84 1 30mm 2 332 HYS64T32000GU 2 2 2 2004 PC2 4300 4 4 4 3 7 A 067100 01387 256 MB ECC PC2 3200 3 3 3 5 A Q67100 Q1371 32Mx72 256M 32Mx8 PTFBGA60 1 30mm HYS72T32000GU 3Q04 PC2 4300 4 4 4 3 7 A Q67100 Q1370 PC2 3200 3 3 A 067100 Q138 64Mx64 512M 64Mx8 PTFBGA60 1 30mm 3 220 HYS64T64000GU 2 2 ER 2Q04 PC2 4300 4 4 4 3 7 A Q67100 Q1390 512 MB ECC PC2 3200 3 3 3 5 A Q67100 01392 64Mx72 512M 64Mx8 PTFBGA60 1 30mm HYS72T64000GU 2Q04 PC2 4300 4 4 4 3 7 A Q67100 Q1393 PC2 3200 3 3 3 5 A Q67100 Q1395 128Mx64 512M 64Mx8 PTFBGA60 2 3
22. DR Components 2 2 256 Mb FBGA 32Mx4 TSOP 54 400 mil PC133 2 HYB39S128400CT 7 Q67100 Q4101 16Mx8 TSOP 54 400 mil PC133 2 2 2 HYB39S128800CT 7 067100 Q4107 8Mx16 TSOP 54 400 mil PC133 2 2 2 HYB39S128160CT 7 Q67100 Q4113 64Mx 4 TSOP 54 400 mil PC133 2 2 2 HYB39S256400DT Q67100 Q4330 32 Mag TSOP 54 400 mil PC133 2 2 2 HYB39S256800DT Q67100 Q4332 16 M x16 TSOP 54 400 mil PC133 2 2 2 HYB39S256160DT 7 Q67100 Q4334 64Mx4 FBGA 54 8x12 mm PC133 2 2 2 HYB39S256400DC 7 Q67100 Q4772 32Mx8 FBGA 54 8x12 mm PC133 2 2 2 HYB39S256800DC 7 Q67100 Q4774 16Mx16 FBGA 54 8x12 mm PC133 2 2 2 HYB39S256160DC 7 Q67100 Q4808 128Mx4 TSOP 54 400 mil PC133 3 3 3 HYB39S512400AT 7 5 067100 04404 64Mx8 TSOP 54 400 mil PC133 3 3 3 HYB39S512800AT 7 5 067100 Q4403 32 Mx 16 TSOP 54 400 mil PC133 3 3 3 HYB39S512160AT 7 5 067100 Q4402 Now Now Now Now DRAM Modules Nomenclature DDR DDR2 Modules Unbuffered DIMM Registered DIMM 184 pin and SO DIMM 200 pin HYS 64 D B2 2 2 o G D IL 6 A Example E Part Number Extension Speed Power Module Family Package Type Designator Number of Memory Ranks Designator Memory Density per DQ Power Supply Data Width Prefix Component Die Revision Indicator 8 PC1600 2 2 2 DDR200 7 5 PC2100 2 5 3 3 DDR266B 7 PC2100 2 3 3 DDR266A 7F PC2100 2 2 2 DDR266 6 PC2700 2 5 3 3 DDR333 5 PC3200 3 3 3 P
23. FBGA 60 10x12 mm 3 HYB25D512400BC Now DDR400 3 3 3 5 Q67100 Q1693 DDR333 2 5 3 3 HYB25D512800BC 6 Q67100 Q1663 Now DDR 2 5 3 HYB25D512800BF 6 67100 21 Now XX 64Mx8 FBGA 60 10x12 mm 2 593 Dun SET 95215 DDR400 3 3 3 HYB25D512800BC 5 067100 Q1451 Now DDR400 3 3 3 HYB25D512800BF 5 Q67100 01452 Now XX DDR 2 5 3 6 Q67100 01453 32Mx16 FBGA 60 10x12 mm ERE 555 HYB25D512160BC 3 Now DDR400 3 3 3 5 Q67100 Q1454 XX Lead and Halogen Free DDR2 Components 5 64Mx4 32Mx8 16 Mx 16 128Mx4 64Mx8 32 Mx16 256Mx4 128Mx8 64Mx16 PTFBGA 60 PTFBGA 60 PTFBGA 84 PTFBGA 60 PTFBGA 60 PTFBGA 84 PTFBGA 68 PTFBGA 68 PTFBGA 92 DDR2 400 3 3 3 067100 01314 HYB18T256400AC DDR2 533 44 4 3 7 Q67100 Q1311 DDR2 400 3 3 3 5 067100 Q1322 HYB18T256800AC DDR2 533 444 3 7 Q67100 Q1320 DDR2 400 3 3 3 5 Q67100 Q1301 HYB18T256160AC DDR2 533 44 4 3 7 Q67100 01293 DDR2 400 3 3 3 5 Q67100 Q1350 HYB18T512400AC DDR2 533 444 3 7 067100 01349 DDR2 400 3 3 3 5 Q67100 Q1354 HYB18T512800AC DDR2 533 444 3 7 Q67100 01352 DDR2 400 3 3 3 5 Q67100 Q1347 HYB18T512160AC DDR2 533 444 3 7 Q67100 Q1346 DDR2 400 3 3 3 5 Q67100 01619 HYB18T1G400AC DDR2 533 4 4 4 3 7 Q67100 01618 DDR2 400 3 3 3 5 Q67100 Q1622 HYB18T1G800AC DDR2 533 4 4 4 3 7 Q67100 Q1621 DDR2 400 3 3 3 5 Q67100 Q1625 HYB18T1G160AC DDR2 533 444 3 7 067100 01624 3004 2004 3004 DRAM Components S
24. GBR HYS72D128500GR HYS72D128300GBR HYS72D128321GBR HYS72D256520GR HYS72D256320GBR 7 A 7 A ne 7 B 7 B 6 B 5 B 6 C 5 C 7 B 7F B 7 B 6 B 5 B 6 C 5 C 7 B 6 B 5 B 6 C 5 C 7 B 7F B 7 B 6 B 6 C 7A 7 B 6 B 5 B 7 B 6 B 5 B 7 A 7 B 6 B 5 B 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 067100 Q67100 Q67100 Q67100 Q67100 Q67100 Q67100 Q67100 Q67100 Q67100 Q67100 Q67100 Q67100 04446 04377 01471 04457 04533 04671 01461 Q1413 Q1673 Q4463 Q5007 Q4673 Q4686 Q1462 Q1415 Q1685 Q4687 Q4693 Q1463 Q1414 Q1684 Q4752 Q5008 Q4674 Q4668 Q1412 Q4990 Q1429 Q1032 Q1687 Q1422 Q1043 Q1686 Q4661 Q1031 Q1030 Q1689 Organi Genera Compo Compo of Ranks Module Module Sales Speed Ordering Prod Green zation tion Organization Package on Module Height Speed Description No Code Now 3Q04 Now 2Q04 3Q04 Now 2Q04 3Q04 Now 2Q04 3Q04 Now 2Q04 Now Now Now Now Now Registered DDR DIMM 184 pin 128 MB 16Mx72 128M 128M 32Mx72 256M e par is 2 128Mx72 256M EOL End of Life 16Mx8 32Mx4 32Mx8 64Mx4 128M x4 TSOP TSOP TSOP TSOP TSOP stack 1 1 7 PC1600 PC2100 PC1600 PC2100
25. Hz HYB18T256321F 400 MHz Lead Free EOL 2 5 V 1 8 V 3 3V 1 8V 2 5 V 1 8V 3 3 V 1 8V 3 3 V or MH 16M x69 EE 2 5 V 1 8V Pb D i va ba ti ti ti IN L t 133 MHZ 3 3 3 133 MHZ 3 3 3 ETR FBGA 144 067100 04866 3 3 067100 04121 3 6 Q67100 Q4348 3 6 067100 Q4930 4 5 067100 Q4123 4 5 Q67100 Q4786 6 0 067100 04592 5 0 Q67100 Q4277 5 0 067100 Q1408 4 0 067100 Q1409 20 Q67100 Q4868 22 067100 04869 25 067100 Q4870 End of Life HYB25L128160AC HYE25L128160AC HYB39L128160AT HYB39L128160AC HYB18L128160BF HYB18L128160BC HYB25L256160AC HYE25L256160AC HYB39L256160AC HYB39L256160AT HYB18L256160BF HYB18L256160BC HYB25L512160AC HYE25L512160AC Q67100 7 5 ETR Q67100 75 Q67100 75 Q67100 7 5 Q67100 7 5 Q67100 7 5 Q67100 7 5 ETR Q67100 7 5 Q67100 7 5 Q67100 75 Q67100 75 Q67100 75 Q67100 7 5 ETR Q67100 Extended Temperature TSOP 66 FBGA 144 Q4542 Q4544 Q4624 Q4546 Q1581 Q1588 Q5145 Q5148 Q5144 Q4627 Q1295 Q1577 Q4921 Q4923 EOL Now Now 3Q04 FBGA 54 FBGA 54 TSOP 54 FBGA 54 FBGA 54 FBGA 54 FBGA 54 FBGA 54 FBGA 54 TSOP 54 FBGA 54 FBGA 54 FBGA 54 FBGA 54 Specialty DRAMs Nomenclature CellularRAM HYE 18 P 16 16 1 A e 60 Example Speed Package E Chip size Package w Wafer Known Good Die Product Revision Die Revision Interface o Sync Async Page 1 Async Page only Organization 16
26. Product Information 2004 MEMORY SPECIRUM www infineon com memory www infineon com memory flash s Infineon technologies Never stop thinking Technology and Trends As a leading memory products supplier Infineon continues to expand its portfolio with the recent introduction of DRAM Components Double Data Rate DDR DDR2 and Single Data Rate SDR Synchronous Dynamic Random Access Memory DRAM Modules Double Data Rate DDR DDR2 Dual Inline Memory Modules DIMMs Single Data Rate SDR Dual Inline Memory Modules DIMMs Flash Components Thin Small Outline Package TSOP Flash Cards MultiMediaCards and SD Cards Introduction APRIL 2004 This edition of Memory Spectrum has been developed to enable you to easily view the entire range of Infineon s memory products For more related product information and the latest datasheets please visit our websites www infineon com memory and www infineon com memory flash B DDR400 Components and DIMMs PC3200 m 2GB DDR2 Unbuffered DIMM B 4 GB DDR2 Registered DIMM B 16 Mb and 32 Mb CellularRAM B 512 Mb Mobile RAM B Green DRAM Components and Modules E 512 Mb and 1Gb TwinNAND Components B SD Cards MultiMediaCards Lead amp Halogen Free 16 Mb 32 Mb 128Mb 256Mb 512 Mb 1Gb DDR DRAMs DDR2 DRAMs eg SDR DRAMs Reduced Latency RLDRAM Graphics RAM Mobile RAM eg CellularRAM amp
27. Ranks Designator Memory Density per DQ Power Supply Data Width Prefix Component Die Revision Indicator GU GR GBR GD GBD 166 MHz PC166 3 3 3 133 MHz PC133 2 2 2 133 MHz PC133 3 3 3 100 MHz PC100 2 2 2 Low Power Product Standard Power Product Unbuffered 168 pin DIMM Registered 168 pin DIMM Registered 168 pin DIMM FBGA based 144 pin Small Outline DIMM SO DIMM 144 pin SO DIMM FBGA based Product Variations One Memory Module Rank Two Memory Module Ranks Data Sheet Defined 8 16 32 64 128 256 64 72 HYS 8Mb 16 Mb 32 Mb 64 Mb 128 Mb 256 Mb 3 3 V SDR Modules X 64 Non ECC x 72 ECO Standard Prefix for SDRAM based Memory Modules Unbuffered SDR DIMM 168 pin 128 MB 16 Mx 64 128 MB ECC 16 Mx 72 32Mx64 256 MB ECC 32Mx72 64 Mx 64 512 MB ECC 64 Mx72 EOL End of Life Module Organi Genera Density zation tion 128M 256M 128M 128M 256M 128M 256M 256M 256M 16Mx8 16 Mx 16 16Mx8 16Mx8 32Mx8 16Mx8 32Mx8 32Mx8 32Mx8 TSOP TSOP TSOP TSOP TSOP TSOP TSOP TSOP TSOP al 1 25 1 15 1 25 1 25 1 25 125 1 25 1 25 1 25 HESSE SESS PC133 2 2 2 PC133 3 3 3 PC133 2 2 2 HESS SESS PC133 2 2 2 HEUS SES PC133 2 2 2 PC133 3 3 3 PC133 2 2 2 HESS SESS PC133 2 2 2 PC133 3 3 3 PC133 2 2 2 PC133 3 3 3 PC133 2 2 2 HEUS SES PC133 2 2 2
28. caret A S Yakacik Yolu No 111 34861 Kartal Istanbul 490 216459 2851 Fax 90 2164 19 3190 United Kingdom Infineon Technologies UK Ltd Infineon House Fleet Mill Minley Road Fleet Hampshire GU51 2RD 44 1252 77 2200 Fax 44 1252 77 2201 U S A Infineon Technologies North America Corp 3700 West Parmer Lane Suite 102 Austin TK 78727 41 5123 41 7127 Fax 1 5123 41 99 26 U S A Infineon Technologies North America Corp 8203 Willow Place South Suite 660 Houston TX 77070 1 28 17 74 05 55 Fax 1 28 17 74 05 61 Infineon Technologies North America Corp 2529 Commerce Drive Kokomo IN 46902 2 7 65 4 56 19 28 Fax 1 7 65 4 56 38 36 Infineon Technologies North America Corp 21800 Haggerty Road Suite 112 Northville MI 48167 2 41 248 3 74 0890 Fax 1 2 48 3 74 25 01 Infineon Technologies North America Corp 3000 CentreGreen Way Raleigh NC 27513 2 1 9196 77 27 00 Fax 1 91 96 78 19 34 Infineon Technologies North America Corp 6170 Cornerstone Ct East Suite 240 San Diego CA 92121 2 1 85 85 26 22 01 Fax 1 85 85 26 22 02 Infineon Technologies Corporation 1730 North First Street San Jos CA 95112 2 1 408 5 01 60 00 Fax 1 4 08 5 01 24 24 Infineon Technologies North America Corp 1901 N Roselle Rd Suite 1020 Schaumburg IL 60195 2 1 84 78 84 70 09 Fax 1 84 78 84 75 99 Ordering No B166 H8399 X X
29. nsity anization Page Size Block Size Core Write Sales Ordering Code Package Voltage a Speed Description Normal 64Mx8 512 16 Bytes 16K 512 Bytes 3V 3V Enhanced 18V Enhanced 3V Normal 128Mx8 512416 Bytes 16K 512 Bytes 3V 3V Enhanced 18V Enhanced HYF33DS512800ATC HYF33DS512800BTC On request P TSOPI 48 HYF31DS512800BTC HYF33DS1G802ATC HYF33DS1G802BTC On request P TSOPI 48 HYF31DS1G802BTC Flash 25 uselJ Nomenclature TwinFlash Cards FIVE 3 N 256 0 NO 5 o AA 1 A A Example L Package A SD commercial B MMC commercial miniSD commercial D mini MMC commercial Memory Revision A 170 nm Process Technology B 110 nm Process Technology Controller Generation 1 1st generation 2nd generation Firmware AA 1st firmware AB 2nd firmware Content o No content 1 Content 1 rev label Label Size o No label 1 16 MB 2 32 MB 3 64 MB 4 128 MB 5 256 MB 6 512 MB 7 1 GB Label Shortcut NO No label IF IFX label Speed o Standard 1 Future use Memory Capacity 64 64 MB 128 128 MB 256 256 MB 512 512 MB 01G 1024 MB Technology N TWIN NAND Supply Voltage 3 3 3 V Core 1 1 8V Core Dual Voltage Type Flash Card TwinFlash Cards Operating Voltage Sales Description Ordering Code HYC3No640NO00AA1AB 2 7V 3 6V HYC3N1280NO00AA1AB On request HYC3N2560NO00AA1AB 64 MB HYC3No640NO00AA1AA 128 MB 2 7V 3 6V HYC3N1280NO00AA1AA On request
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