Samsung 128 GB SATA SSD
Contents
1. K7A321830C 100 TQFP SPB 85 25 3 1 200 3x35 215 Mass Production 2E1D K7B321835C 100 TQFP SB 853 25 7 5 118 9575 Mass Production Ind Temp only K7A323630C 100 TQFP SPB 85 25 3 1 200 85 75 Mass Production 2E1D pis K7B323635C 100 TQFP SB 853 25 7 5 118 313 255 Mass Production Ind Temp only 7 163630 100 TQFP SPB 3375 21635 250 167 2134285 Mass Production 2E1D 512Kx36 K7A163631B 100 TQFP SPB 85225 Sal 200 33 245 Mass Production 2E2D K7B163635B 100 TQFP SB 939515 79 117 93175 Mass Production 7 161830 100 5 331725 D 62315 250 167 3375 Mass Production 2E1D 1 18 7 161831 100 TQFP SPB 3375 3 200 313 253 Mass Production 2E2D K7B161835B 100 TQFP SB 337215 75 117 8535255 Mass Production K7A803609B 100 TQFP SPB 33 2 6 250 3915 Not for new designs 2E1D 256x36 7 803600 100 5 358 35 167 915 Not for new designs 2E1D K7B803625B 100 TQFP SB D 6 5 133 313 29 Not for new designs Se 7 801809 100 5 D 2 6 250 331215 Not for new designs 2 10 512x18 K7A801800B 100 TQFP SPB 353 35 167 IAD Not for new designs 2 10 K7B801825B 100 TQFP SB 3 3 6 5 133 8525 Not for new designs K7A403609B 100 TQFP SPB 3 3 24 250 8375 Not for new designs 2 10 7 403600 100 5 3 3 345 167 Shs 25 Not for new designs 2 10 aes K7B403625B 100 TQFP SB 3 3 6 5 133 Sek 25 Not for new designs 4Mb K7A403200B 100 TQFP SPB2. 32GB MCBQE32G8MPP 0VAO0 1 8 ThinuSATA 8Gb 64GB MCCOE64G8MPP 0VA00 SATA II 32GB MCBQE32G5MPP 0VA00 SLC 5410 DICE 8Gb 3 0Gb sec 64GB 6465 0 00 SLIM 32GB MCBQE32GFMPP MVAOO USATA caseless 64GB MCBQEGAGFMPP MVAOO 64GB MMCRE64G8MPP 0VAO0 1 8 Thin uSATA C 128GB MMCQE28G8MUP 0VAO0 PC Notebook 64GB 16Gb 6465 0 00 410 DICE Thin SATA 128GB MMDOE28G5MPP 0VAO0 64GB MMCREGAGFMPP MVAOO SATA II n uSATA 16Gb caseless 128GB MMCQE28GFMPP MVAOO USES 64GB MMCRE64G5MXP 0VB00 2 5 ThinSATA 12868 16Gb MMCRE28G5MXP OVBOO 800 256GB 5665 0 00 SLIM 64GB MMCRE64GFMXP MVB00 USATA caseless 128GB MMCRE28GFMXP MVBOO 25GB MCBQE25G5MPQ 0VA03 55410 2 5 Thin SATA 50GB MCCOE50G5MPQ 0VA03 SATA II 50GB MCBQE32G5MPQ 0VA03 Server Storage 3 0Gb sec 55415 254 Thin SATA 665 SLC MCCOE64G5MPQ 0VA03 50GB MCBQESOGSMXP 0VBO3 55800 DICE Thin SATA uL Be 100GB MCCOE00G5MXP 0VBO3 8GB MMAGEOBGSMPP MVAOO UMPC Low Cost PC SATA Il MLC UM410 HALFSLIM ThinSATA 16GB 16Gb MMBRE16GSMPP MVAOO 32GB MMCRE32GSMPP MVAOO Please contact Marketing for the latest offerings www samsung com semi flash JANUARY 2009 SSD 47 SD MicroSD FLASH CARDS Flash Cards IGB 8GbMIC B die SKYME
3. Samsung Semiconductor Inc Memory and Storage Product Selection Guide January 2009 Samsung Semiconductor Samsung offers the industry s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years Its DRAM flash and SRAM products are found in computers from ultra mobile portables to powerful servers and in a wide range of handheld devices such as smartphones and MP3 players Samsung also delivers the industry s widest line of storage products These inlcude optical and hard disk drives as well as flash storage such as the all flash Solid State Drive and a range of embedded and removable flash storage products de Mobile Wireless 6 2 Notebook PCs Desktop PCs Workstations 1 Servers Electronics a Networking Communications DRAM Pages 4 14 www samsung com semi dram DDR3 SDRAM DDR2 SDRAM DDR SDRAM Mobile SDRAM RDRAM FLASH Graphics DDR SDRAM DRAM Ordering Information OneDRAM see Fusion Pages 15 19 www samsung com semi flash SLC Flash MLC Flash SD and microSD Cards Flash Product Ordering Information Solid State Drive see Storage SRAM OneNAND see Fusion e moviNAND see Fusion Flex OneNAND see Fusion Pages 20 25 www samsung com semi sram UtRAM Asynchronous SRAM NtRAM e
4. 512Mb MDDR 512Mb 51 23 NT SEEN EORUM 18V extended 133 2 OneDRAM MCP P N KARO0900GM 28 Fusion Memory JANUARY 2009 www samsung com semi fusion 3 5 Hard Disk Drives 1TB 7200 SATA 2 32MB HD103UJ 750 7200 2 32MB HD753U 750 7200 SATA 2 16MB HD752LI 640 7200 SATA 2 16MB HD642J 500 7200 SATA 2 16MB HD502U FI 500 7200 SATA 2 8MB HD501U 320 7200 SATA 2 16MB HD322HJ 250 7200 SATA 2 16MB HD252HJ 250 7200 SATA 2 8MB HD251HJ 160 7200 SATA 2 16MB HD162GJ 160 7200 SATA 2 8MB HD161GJ 500 7200 SATA 2 8 HD500LJ 500 7200 SATA 2 16 HD501U 320 7200 2 8 HD320KJ 320 7200 SATA 2 16 HD321KJ 400 7200 SATA 2 8 KEE T1335 400 7200 SATA 2 16 HD401LI 300 7200 SATA 2 8 HD300LI m 400 7200 PATA 8 HD400LD 300 7200 PATA 8 HD300LD 250 250 7200 SATA 2 8 0250 160 7200 2 8 HD161H 120 7200 SATA 2 8 HD120H 80 7200 SATA 2 2 HD081GJ ee 80 7200 SATA 2 8 HD082G 40 7200 SATA 2 2 HD041G 40 7200 SATA 2 8 HD042G 250 7200 SATA 2 8 2504 nee 250 7200 SATA 2 8 5 2004 250 7200 8 SP2514N E 200 7200 8 2014 160 7200 2 8 160 PBOSD 120 7200 SATA 2 8 HD120UJ 80 7200 SATA 2 8 HDO80HJ 160 7200 PATA 2 SP1644N 160 7200 PATA 8 1654 8050 120 7200 2 SP1243N 120 7200 PATA 8 SP1253N 80 7200 PATA 2 5 0842 3 5 Enterprise RAID Driv
5. CL 5 tRCD 5 tRP 5 F8 533MHz CL 7 tRCD 7 tRP 7 G8 533MHz CL 8 tRCD 8 tRP 8 H9 667MHz CL 9 tRCD 9 tRP 9 800MHz CL 10 tRCD 10 tRP 10 7 133MHz CL 3 PC100 CL2 13 AMB Vendor for FBDIMM 0 5 Intel 1 6 8 IDT 9 Montage Note All of Lead free or Halogen free product are in compliance with RoHS 14 DRAM Ordering Information JANUARY 2009 www samsung com semi dram FLASH Family Density Technology Part Number Package Type Tray R Remarks K9MDGO8U5M PCBO 5 1 x8 Be 960 1 000 128Gb DSP Sa K9MDGO8U5M ZCBO WELP x8 960 1 000 K9HCGO8U1M PCBO TSOP1 x8 B 960 1 000 16Gb based 64Gb QDP K9HCGO8U1M IIBO ULGA x8 99 960 1 000 4KByte Page __ K9LBGOSUOM PCBO TSOP1 x8 B 960 1 000 32Gb DDP K9LBGO8U1M IIBO ULGA x8 D 720 2 000 BOE K9GAGO8U0M PCBO TSOP1 x8 3 3 960 1 000 16Gb mono K9GAGO8U0M IIBO ULGA x8 SE 720 2 000 _ 3266 59nm K9HBGO8U1B PCBO TSOP 1 8 DE 960 1 000 qualify B die part 51nm K9LAGO8U0A PCBO TSOP1 8 83 960 1 000 KOLAGOSUOB 16Gb DDP 0000 8Gb Based 59nm K9LAGOSUOB PCBO 1 x8 33 960 1 000 2KByte Page 7 5 W O Cache qualify B die part 5i K9G8G08U0A PCBO TSOP1 x8 SiS 960 1 000 KOG8GOSUOB nm 8Gb mono 0000 K9G8G08U0A IIBO ULGA 8 B 960 2 000 59nm K9G8G08U0B PCBO TSOP1 x8 8 960
6. 18V 83 AAQD KBZ00900PM A439000 14 14 1 25 240 OneDRAM 512Mb now EOL Based on demand OneDRAM is in MCP only not in discrete package www samsung com semi mcp JANUARY 2009 MCP 27 OneNAND OneNAND is a monolothic IC that combines a NAND flash array with a NOR flash interface plus an SRAM buffer It s ideal for high performance high density applications KFG1216Q2B DEB8000 63FBGA 9 5x12 X16 1 8 extended 83Mhz 1 120 KFG1216U2B DIB6000 63FBGA 9 5x12 X16 33 industrial 66Mhz 1 120 512Mb KFG1216Q2B SEB8000 67FBGA 7x9 X16 1 8 extended 83Mhz 1 120 KFG1216U2B SIB6000 67FBGA 7x9 X16 ER industrial 66Mhz 1 120 KFM1216Q2B DEB8000 63 FBGA 9 5x12 X16 1 8v extended 83Mhz 1 120 Muxed KFG1G16U2C AIB6000 63 FBGA 10x13 X16 3 3v industrial 66Mhz 1 120 1Gb KFG1G16Q2C AEB8000 63 FBGA 10x13 X16 1 8v extended 83Mhz 1 120 KFM1G16Q2C DEB8000 63 FBGA 10x13 X16 1 8v extended 83Mhz 1 120 Muxed SC KFG2G16Q2A DEB8000 63 FBGA 10x13 X16 1 8v extended 83Mhz 1 120 KFM2G16Q2A DEB8000 63 FBGA 10x13 X16 1 8v extended 83Mhz 1 120 Muxed 4Gb DDP KFH4G16Q2A DEB8000 63 FBGA 10x13 X16 1 8 extended 83Mhz 1 120 T amp R MOQ 2Kpcs Please contact your local Samsung sales representative for latest product offerings amp information on support amp availability NOTE All parts are lead free Flex OneNAND A monolithic IC with a NAND flash array using a NOR flash interface Flex OneNAND enables partiti
7. 84 FBGA 11x18mm Lead free amp Halogen free 667 800 Now KAT1G164QE HC E6 F7 E7 F8 84 FBGA 11x18mm Lead free amp Halogen free 667 800 1066 Jan 09 Aqu 512Mx4 K4T2G044QA HC E6 F7 E7 68 FBGA 11x18mm Lead free amp Halogen free 667 800 Now 256Mx8 K4T2G084QA HC E6 F7 E7 68 FBGA 11x18mm Lead free amp Halogen free 667 800 Now NOTES E6 DDR2 667 5 5 5 E7 DDR2 800 5 5 5 Voltage 1 8V F7 DDR2 800 6 6 6 F8 DDR2 1066 7 7 7 DDR SDRAM 1U REGISTERED MODULES 512Mb 64Mx72 M312L6523FH3 CCC BO 64M x8 9 Lead free 333 400 M312L2920FLS CBO 128M x4 18 Lead free 333 400 1Gb 128Mx72 M312L2923FH3 CCC BO 128M x8 9 Lead free 333 400 M312L2920FH3 CB3 128M x4 18 Lead free 333 400 2Gb 256Mx72 31215720 128 4 36 Lead free 333 400 NOTES BO DDR266 133MHz CL 2 5 B3 DDR333 166MHz CL 2 5 Type 184 pin A2 DDR266 133MHz Cl 2 CC 008400 200MHz CL 3 DDR SDRAM UNBUFFERED MODULES 512Mb 64MX64 M368L6523FLS CCC B3 64M x8 8 Lead free amp Halogen free 333 400 1Gb 128Mx64 M368L2923FLN CCC B3 64M x8 16 Lead free amp Halogen free 333 400 NOTES BO DDR266 133MHz CL 2 5 B3 DDR333 166MHz CL 2 5 Package 66TSOP lead free and halogen free A2 DDR266 133MHz Cl 2 CC 008400 200MHz CL 3 Voltage 2 5V DDR SDRAM SODIMM MODULES 512Mb 64 64 _ M470L6524FL0 CB300 32M x16 8 Lead free 858 1Gb 128Mx64 M470L2923F60 CB300 64M x8 16 Lead free 333 NOTES BO DDR
8. DVD R DL 8 5GB DVD RW DVD RAM 4 7GB DVD RW 8X 10 8MB sec 8X 10 8MB sec WRITE DVD4 7GB DVD R RW DVD RAM DVD R DL 8 5GB DVD R DUAL 6X 8 1 MB sec 6X 8 1MB sec CD R RW DVD R DUAL 6X 8 1 MB sec 6X 8 1 MB sec DATA FORMAT DVD R 8X 10 8MB sec 8X 10 8MB sec CD CD DA CD ROM MIXED CD CD ROM XA ENHANCED CD DVD RW 6X 8 1MB sec 8X 10 8MB sec CD EXTRA CD Photo CD VIDEO CD CD TEXT CD G DVD ROM Single 8X 10 8MB sec Multi Session DVD DVD RAM DVD ROM DVD VIDEO Multi Session Read Write DVD ROM Dual 8X 10 8MB sec Multi Border Read Write CD ROM 24X 3 6MB sec Recording mode CD R 24X 3 6MB sec 24X 3 6MB sec CD R RW DAO TAO SAO Packet Write RW US RW 24 3 6MB sec 24 3 6MB sec DVD R RW Sequential Random RW HS RW 10X 1 5MB sec 24 3 6MB sec DAO Restricted Overwrite RW CD RW AX 0 6MB sec 24X 3 6MB sec RE DVD RAM 5X 6 75 5X 6 75MB sec Access Time CD 150ms Random DVD 160ms Random Ultra DMA Mode 2 33 3MB sec Multiword DMA mode2 16 6MB sec PIO Mode 4 16 7MB sec Serial ATA 2M Horizontal Vertical 128 W x 12 7 H x 127 D without Bezel yes yes no Optical Disk Drives 33 STORAGE SN S083M Optical Storage DVD RAM Random DISK FORMAT GENERAL SPECIFICATIONS 1 DISC TYPE Data Transfer Rate MAX RAS Ger m 5GB 7GB R 3 DVD R 4 7GB Authoring DVD R 4 7GB Gen
9. Double Layer R Double Layer RW CD R CD RW Print DVD R LF Media Label Data Side Non LF Media Data Side Optional 2 DATA FORMAT CD CD DA CD ROM MIXED CD CD ROM XA ENHANCED CD CD EXTRA CD Photo CD VIDEO CD CD TEXT CD G Multi Session DVD DVD RAM DVD ROM DVD VIDEO Multi Session Read Write Multi Border Read Optical Disk Drives Media Type Write Read DVD R 22X 29 7 MB sec 6X 21 6MB sec DVD RW 8X 10 8MB sec 2X 16 2MB sec DVD R DUAL 16X 21 6MB sec 2X 16 2MB sec DVD R DUAL 12X 16 2MB sec 2X 16 2MB sec DVD R 22X 29 7 MB sec 6X 21 6MB sec DVD RW 6X 8 1 MB sec 2X 16 2MB sec DVD ROM Single 6X 21 6MB sec DVD ROM Dual 2X 16 2MB sec CD ROM 48 7 2MB sec CD R 48 7 2MB sec 40X 6 0MB sec US RW 32X 4 8MB sec 40X 6 0MB sec HS RW 10X 1 5MB sec 40X 6 0MB sec CD RW 4X 0 6MB sec 40X 6 0MB sec DVD RAM 12X 16 2MB sec 12X 16 2MB sec Access Time CD 110ms Random DVD 130ms Random Data transfer mode Interface Buffer Memory Drive Install Form Size W H L Buffer Protection Lead Free Light Scribe JANUARY 2009 SATA 1 5Gbps Serial ATA 2M Horizontal Vertical 148 2mm W x 42mm H X 170mm D with Bezel yes yes no www samsungodd com SN T083A Slot in Type Optical Storage DISK FORMAT GENERAL SPECIFICATIONS READ MASTERED DISC CD R CD RW DVD ROM DVD R 3 95GB Data Transfer Rate MAX DVD R 4 7GB Authoring
10. VDDQ Number of Internal Banks XDR DRAM J BOC LF P BOC Mobile DRAM Leaded Lead Free G A 52balls FBGA Mono R B 54balls FBGA Mono 7 54balls BOC Mono J 60 72 balls FBGA Mono 0 5pitch L F 60balls FBGA Mono 0 8pitch S D 90balls FBGA Monolithic 11mm x 13mm Smaller 90balls FBGA Mono Y P 54balls CSP DDP MIE 90balls FBGA DDP 10 Temp amp Power COMMON Temp Power C Commercial Normal 0 C 95 C amp Normal Power C Mobile Only Commercial 25 70 C Normal Power 1 Commercial Medium L Commercial Low 0 C 95 C amp Low Power L Mobile Only Commercial Low i TCSR F Commercial Low i TCSR amp PASR amp DS E Extended 25 85 C Normal N Extended Low i TCSR G Extended Low i TCSR amp PASR amp DS I Industrial Normal 40 C 85 C amp Normal Power P Industrial Low 40 85 C amp Low Power H Industrial Low i TCSR amp PASR amp DS 11 Speed Wafer Chip Biz BGD 00 DDR SDRAM CC DDR400 200MHz CL 3 tRCD 3 tRP 3 B3 DDR333 166MHz CL 2 5 tRCD 3 tRP 3 1 A2 DDR266 133MHz CL 2 tRCD 3 tRP 3 BO DDR266 133MHz CL 2 5 tRCD 3 tRP 3 Note 1 has compatibility with A2 and BO DDR2 SDRAM CC DDR2 400 200MHz CL 3 tRCD 3 3 DDR2 533 266 CL 4 tRCD 4 RP 4 E6 DDR2 667 333MHz CL 5 tRCD 5 RP 5 F7 DDR2 800 400MHz CL 6 tRCD 6 RP 6 E7 DDR2 80
11. 1 000 qualify B die part 63nm K9G4G08U0A PCBO TSOP1 x8 33 960 1 000 K9G4G08U0B 4Gb based 4Gb mono 0000 51nm K9G4G08U0B PCBO TSOP1 8 33 gen 1 000 Please contact your local Samsung sales representative for latest product offerings Note All parts are lead free www samsung com semi flash JANUARY 2009 NAND Flash 15 SLC NAND FLASH Density Tech Part Number Package 64Gb DSP 32Gb QDP 8Gb Based Sinn 4KB page 16Gb DDP 8G mono 63nm 16Gb QDP 59nm 63nm 4Gb Based 2KB page 8Gb DDP 59nm 63nm 4Gb 59nm 63nm 2Gb 2Gb 59nm 63nm 1Gb 1Gb 59nm 512Mb 512Mb 63nm 256Mb 256Mb 90nm K9NCG08USM PCBO K9WBGO08U 1M PCBO K9WBGO08U 1M PIBO K9KAGOBUOM PCBO K9KAGOBUOM PIBO K9F8G08U0M PCBO K9F8G08U0M PIBO K9WAGO8U1A PCBO K9WAGOSUT1A PIBO K9WAGOSU1A IIBO K9WAGOSU1B PCBO K9WAGO08U 1B PIBO K9WAGO0SU 1B KIBO K9K8G08U0A PCBO K9K8G08U0A PIBO K9K8G08U1A IIBO K9K8GO8U0B PCBO K9K8GO8U0B PIBO K9K8G08U1B KIBO K9FAGO8UOA PCBO K9FAGO8UOA PIBO K9FAGO8UOA IIBO K9FAGOSUOB PCBO K9FAGOSUOB PIBO K9FAGOSUOB KIBO K9F2G08U0A PCBO K9F2G08U0A PIBO K9F2G08UO0B PCBO K9F2G08UO0B PIBO K9F1G08U0B PCBO K9F1GO8U0B PIBO K9F1GO8ROB JIBO K9F1GO8U0C PCBO K9F1G08U0C PIBO K9F1208U0C PCBO K9F1208U0C PIBO K9F1208ROC JIBO K9F1208U0C JIBO K9F5608U0D PCBO 9 5608000 0 K9F5608ROD JIBO K9F5608U0D JIBO Type Vol V Remarks TSOP x8 3 3 960 1 000 TSOP x8
12. 167 1 5 1 8 Mass Production 4 71643682 165 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production SIO 2B 71321882 65 FBGA 1 8 0 45 333 300 250 1 5 1 8 Mass Production 2 2M x18 K71321884C 165 1 8 0 45 333 300 250 1 5 1 8 Mass Production 4 GG Sep 71321882 65 FBGA 1 8 0 45 333 300 250 1 5 1 8 Mass Production SIO 2B SIO K71323682C 165 FBGA 1 8 0 45 333 300 250 59188 Mass Production 2 1M x36 K71323684C 65 FBGA 1 8 0 45 333 300 250 1 5 1 8 Mass Production 4 71323682 65 FBGA 1 8 0 45 333 300 250 1 5 1 8 Mass Production SIO 2B K71161882B 65 FBGA 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production 2 1 18 K71161884B 65 FBGA 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production 4 K7J161882B 65 FBGA 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production SIO 2B Ee K7J163682B 65 FBGA 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production SIO 2B 512K x36 K71163682B 65 FBGA 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production 2 K71163684B 165 FBGA 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production 4 2M x18 K7K3218T2C 165 FBGA 1 8 0 45 450 400 333 Mass Production DDRII CIO 2B DDR 1 oy 1M x36 K7K3236T2C 165 FBGA 1 8 0 45 450 400 333 Mass Production DDRII CIO 2B cio 1M x18 K7K1618T2C 165 FBGA 1 8 0 45 450 400 333 Mass Production DDRII CIO 2B 512K x
13. 3 3 960 1 000 TSOP x8 960 1 000 TSOP x8 3 3 960 1 000 TSOP x8 3 3 960 1 000 TSOP x8 3 3 960 1 000 TSOP x8 3 3 960 1 000 TSOP ma 33 og p S NUN DIIS ULGA x8 3 3 960 2 000 A die LTBO due Dec 08 TSOP x8 33 960 000 TSOP1 x8 3 3 960 000 ULGA HF amp LF x8 3 3 960 2 000 EE EE 50 wm og 1000 ULGA x8 ER 960 2 000 A die EOL LTBO due Dec 08 TSOP1 x8 3 3 960 000 TSOP1 x8 3 960 000 ULGA HF amp LF x8 3 3 960 2 000 m r ULGA x8 3 3 960 2 000 A die EOL LTBO due Dec 08 TSOP x8 960 1 000 TSOP x8 33 960 1 000 ULGA HF amp LF x8 960 2 000 TsoP E TSOP x8 960 1 000 TSOP x8 3 3 960 1 000 90 100 TBO due Mar09 59nm C die coming Oct 08 K9F1G08U0C TSOP x8 3 960 000 0000 EOL due Mar 09 63 FBGA 9 5x12 8 1 8 1 120 2 000 1 8 B die supported through 2009 TSOP x8 3 3 960 000 TSOP1 x8 512 960 000 TSOP1 x8 33 960 000 TSOP1 x8 3x9 960 1 000 63 FBGA 8 5x13 8 1 8 1 120 2 000 63 FBGA 8 5x13 x8 3 3 1 120 2 000 TSOP1 x8 313 960 000 TSOP1 x8 33 1 000 000 63 FBGA 9x11 8 1 8 1 280 2 000 63 FBGA 9x11 33 1 280 2 000 Please contact your local Samsung sales representative for latest product offerings 16 SLC NAND Flash Note All parts are lead free JANUARY 2009 www samsung com semi flash Solid State Drives SSD
14. 4M x16 64M x16 32M x32 64M x32 D 90 FBGA L LEHF E FBGA LEMCP F 90 FBGA S G LGA LF H 90 FBGA S LEHF WBGA 60 CSP LEHEOSP L 90 FBGA SSD LEHF FBGA MCP Part Number K4M51163PE 1 2 3 4 K4M51163PG 1 2 3 4 K4X51163PE 1 2 3 4 K4M28163PN 1 2 3 4 K4M641633K 1 4 641631 1 K4M64163PK 1 2 3 4 KAX1G153PE 1 2 3 4 KAX1G163PC 1 2 3 4 X K4X1G163PQ 1 2 X X 4 16323 1 2 4 16323 1 2 K4X1G323PD 1 2 K4X1G323PQ 1 2 K4X2G303PD 1 2 EE 3 4 54 CSP LE HF OSP 54 CSP LEDDP Q ISM R 54 FBGA 5 90 1 T TSOP2 400 V WBGA LF Y 54 CSP DDP Halogen Free 128Mb 14th 256Mb 13th 512Mb 8th 1Gb 5th generation Mobile DDR SDRAM MCP 90 FBGA DDP 90 FBGA LEDDBP HF 96 FBGA 96 FBGA LEHF FBGA POP LEHF 90 FBGA NOUBWN It will be applied from each different generation by density 8 90 9 110 FBGA LEHF 168 FBGA LEHF DDP 60 G 60 LGA LF 104 FBGA LEHF L WBGA 0 8MM 152 FBGA POP HELF N 168 FBGA LEPOP HF 60 FBGA LEDDBP HF Q ISM 102 FBGA HELF S POP DDP Halogen Free 128Mb 14th 256Mb 13th 512Mb 8th 1Gb 5th generation Mobile DDR SDRAM PEA POP MONO POP MONO LEHF 90 FBGA 90 FBGA LF FBGA LETDP POUNDS It will be applied f
15. 54 TSOP 133 8K 512Mb 64Mx8 K45510832D UC L 75 000 54 TSOP 133 8K 32Mx16 K45511632D UC L 75 000 54 TSOP 133 8K NOTES L Commercial Temp Low Power All products are lead free For industrial temperature check with SSI Marketing Voltage 3 3V Banks 4 Speed PC133 133MHz CL 3 PC100 CL2 RDRAM COMPONENTS 288M x18 K4R8818691 DC M8 T9 800 1066 92 FBGA 16K 32ms NOTES Voltage 2 5 V All products are lead free www samsung com semi dram JANUARY 2009 DDR SDRAM amp RDRAM 9 GRAPHICS DRAM COMPONENTS cones 512Mb 16Mx32 K4G52324FG 170 FBGA 1 5 1 5V 800 900 1000 3200 3600 4000 1Gb 32Mx32 K4G10324FE 170 FBGA 1 5 1 5V 900 1000 1250 3600 4000 5000 CS in 1Q 09 K4J10324QD 136 FBGA 1 8V 1 8V 700 800 900 1Gb 32Mx32 K4J10324QD 136 FBGA 1 85V 1 85V 1000 K4J10324QE 136 FBGA 1 8V 1 8V 700 800 1000 1200 1300 CS in Q2 09 K4J52324QH 136 FBGA 1 8 1 8V 700 800 K4J52324QH 136 FBGA 1 9 1 9V 1000 GDDR3 K4J52324QH 136 FBGA 2 05 2 05V 1200 512Mb 16Mx32 K4J52324QH 136 FBGA 2 05 2 05V 1300 4 5232401 136 1 8 1 8V 700 800 CS in Q3 09 K4J52324Q 136 FBGA 1 9 1 9V 1000 CS in Q3 09 K4J52324Q 136 FBGA 2 05 2 05V 1200 CS in Q3 09 K4W1G1646D 100 FBGA 1 5 1 5V 667 gDDR3 1Gb 64Mx16 K4W1G1646D 100 FBGA 1 8V 1 8V 800 900 _ KAW1G1646E 100 FBGA 1 5V 1 5V 800 900 1000 CS in Q1 09 KAN1G164QQ 84 FBGA 1 8 1 8V 400 500 1Gb 64Mx16 BU KAN1G164QE 84 FBGA 1 8 1 8V 400 500 1 K4N5
16. 5th Generation E 6th Generation F 7th Generation G 8th Generation H 9th Generation 10th Generation J 11th Generation K 12th Generation M 1st Generation N 14th Generation Q 17th Generation L TSOP Il Lead free amp Halogen free H FBGA Lead free amp Halogen free F FBGA for 64Mb DDR Lead free amp Halogen free 6 sTSOP II Lead free amp Halogen free T TSOP II sTSOP II G FBGA U TSOP II Lead free V sTSOP II Lead free 7 FBGA Lead free DDR2 SDRAM 7 FBGA Lead free J FBGA DDP Lead free Q FBGA QDP Lead free FBGA Lead free amp Halogen free M FBGA DDP Lead free amp Halogen free E FBGA QDP Lead free amp Halogen free FBGA DSP Lead free amp Halogen free Thin DDR3 SDRAM Z FBGA Lead free H FBGA Halogen free amp Lead free Graphics Memory Q TQFP U TQFP Lead Free G 84 144 FBGA V 144 FBGA Lead Free 7 84 FBGA Lead Free TSOP L TSOP Lead Free 136 FBGA 136 FBGA Lead Free H FBGA Hologen Free amp Lead Free E 100 FBGA Hologen Free amp Lead Free SDRAM II Lead free amp Halogen free N STSOP II U II Lead free V sTSOP II Lead free 12 DRAM Ordering Information JANUARY 2009 www samsung com semi dram COMPONENT DRAM ORDERING INFORMATION SAMSUNG Memory Bit Organization Temp amp Power Interface VDD
17. C E6 F7 E7 64M x16 4 Lead free 667 800 1 Now M47012953GZ3 C E6 F7 E7 64M x8 16 Lead free 667 800 2 Now 1GB 128Mx64 M47012864QZ3 C E6 F7 E7 64M x16 8 Lead free 667 800 2 Now M47012864EH3 C E6 F7 E7 64M x16 8 Lead free amp Halogen free 667 800 2 Now M47015663QZ3 C E6 F7 E7 128M x8 8 Lead free 667 800 2 Now 2GB 256Mx64 M470T5663EH3 C E6 F7 E7 128M x8 8 Lead free amp Halogen free 667 800 2 Now 4GB 512Mx64 M47015267AZ3 C E6 F7 st 512M x8 8 Lead free 667 800 2 Now NOTES E6 PC2 5300 DDR2 667 CL 5 Voltage 1 8V E7 PC2 6400 DDR2 800 CL 5 Module Height 1 2 F7 PC2 6400 DDR2 800 CL 6 www samsung com semi dram JANUARY 2009 DDR2 SDRAM 7 DDR2 SDRAM COMPONENTS 256Mb 16Mx16 K4T56163QI ZC E6 F7 E7 84 FBGA 9x13mm Lead free 667 800 Now 128M x4 K4T51043QG HC E6 F7 E7 60 FBGA 10x11mm Lead free amp Halogen free 667 800 Now 512Mb 64M x8 K4T51083QG HC E6 F7 E7 60 FBGA 10x11mm Lead free amp Halogen free 667 800 Now 32M x16 K4T51163QG HC E6 F7 E7 F8 84 FBGA 11x13mm Lead free amp Halogen free 667 800 1066 Now SEN G044QQ HC E6 F7 E7 68 FBGA 11x18mm Lead free amp Halogen free 667 800 Now K4T1G044QE HC E6 F7 E7 68 FBGA 11x18mm Lead free amp Halogen free 667 800 Jan 09 EE RS K4T1G084QQ HC E6 F7 E7 68 FBGA 11x18mm Lead free amp Halogen free 667 800 Now K4T1G084QE HC E6 F7 E7 68 FBGA 11x18mm Lead free amp Halogen free 667 800 Now ENTE Kan G164QQ HC E6 F7 E7
18. DVD R RW Incremental DAO Restricted Overwrite RW HS RW 10X 1 5MB sec 24X 3 6MB sec DVD RAM Random CD RW AX 0 6MB sec 24 3 6MB sec DVD RAM 5X 6 75MB sec 5X 6 75MB sec Access Time CD 130ms Random DVD 160ms Random nterface USB 2 0 Buffer Memory 2M www samsungodd com Drive Install Form Size W H L JANUARY 2009 Horizontal Vertical 141mm W x 19mm H X 157mm D Buffer Protection yes Lead Free yes Light Scribe no Optical Disk Drives STORAGE DRAM Flash SRAM MCP Fusion SAMSUNG System LSI ASICs APs Display Drivers Imaging ICs Foundry Disclaimer The information in this publication has been carefully checked and is believed to be accurate at the time of publication Samsung assumes no responsibility however for possible errors or omissions or for any consequences resulting from the use of the information contained herein Samsung reserves the right to make changes in its products or product specifications with the intent to improve function or design at any time and without notice and is not required to update this documentation to reflect such changes This publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others Samsung makes no warranty representation or guarantee regarding the suitability of its products for any particular purpose nor does Samsung assume any liability arisi
19. JANUARY 2009 www samsung com semi mcp moviNAND NAND DRAM 1GB amp 1Gb 1Gb x32 3 3V 1 8V 1 8V 199FBGA 1Gb x32 3 3V 1 8V 1 8V 199FBGA 1GB amp 2Gb 2Gb x32 2 8V 1 8V 1 8V 199FBGA 1Gb x32 3 3V 1 8V 1 8V 199FBGA 2GB amp 2Gb 2Gb x32 3 3V 1 8V 1 8V 199FBGA 1Gb x32 3 3V 1 8V 1 8V 199FBGA 4GB amp 2Gb 2Gb x32 3 3V 1 8V 1 8V 199FBGA 1Gb x32 3 3V 1 8V 1 8V 199FBGA 8GB amp 2Gb 2Gb x32 3 3V 1 8V 1 8V 199FBGA MCP NOR UtRAM 512Mb 128Mb 1 8V 1 8V 107FBGA 1 8V 1 8V 107FBGA 128Mb 3 0V 3 0V 84FBGA 256Mb 3 0V 3 0V 84FBGA 64Mb 1 8V 1 8V 56FBGA 64Mb 1 8V 1 8V 84 88FBGA 128Mb 1 8V 1 8V 84 88FBGA 32Mb 3 0V 3 0V 64FBGA 64Mb 32Mb 3 0V 3 0V 56FBGA MCP NOR DRAM 103FBGA 103FBGA 128Mb x16 1 8V 1 8V 1 8V 1 8V 512Mb 256Mb x16 INE NNNM MCP OneDRAM OneNAND NAND OneDRAM OneNAND NAND PKG Information Version Part EE 18V 166 3 APOT SDR up Sau AQD KACOOFO08M AE77000 14 14 1 15 240FBGA B port x32 B port DDR 18 166MHzGci 3 DDR Ae 83Mhz Mux AQD KACOOFOOXM AE77000 14 14 1 15 240 B port x32 B port DDR A port x16 _ SDR Ge a 18V 166MHzGCL 3 san opa 16 18 83Mhz AQD TBD 14 14 1 15 240FBGA A port x32 A port SDR SEES 1 8 Bport ppR 16
20. for 2Gb E FBGA QDP Lead free amp Halogen free G FBGA FBGA Lead free amp Halogen free J FBGA DDP Lead free M FBGA DDP Lead free amp Halogen free N sTSOP Q FBGA QDP Lead free T TSOP II 400mil U TSOP II Lead Free V STSOP II Lead Free 7 FBGA Lead free 10 PCB Revision 6 of Banks in Comp amp Interface 1 4K GAmxRef 4Banks amp SSTL 2 2 8K 64ms Ref 4Banks amp SSTL 2 2 4K 64ms Ref 4Banks amp LVTTL SDR Only 5 8 64ms Ref 4Banks amp LVTTL SDR Only 5 4Banks amp SSTL 1 8V 6 8Banks amp SSTL 1 8V 0 Mother PCB 1 1st Rev 2 2nd Rev 3 3rd Rev 4 Ath Rev Parity DIMM S Reduced PCB U Low Profile DIMM 11 Temp amp Power C Commercial Temp 0 C 95 C amp Normal 4 DRAM Component Type B DDR3 SDRAM 1 5V VDD L DDR SDRAM 2 5V VDD 5 SDRAM DDR2 SDRAM 1 8V VDD Ge Power 7 Organization L Commercial Temp 0 C 95 C amp Low Power 0 x4 12 Speed 3 x8 4 x16 CC 200MHz CL 3 tRCD 3 tRP 3 6 x 4 Stack Standard 7 x 8 Stack Standard 8 x 4 Stack 9 x 8 Stack 8 Component Revision A 2nd Gen B 3rd Gen C 4th Gen D 5th Gen E 6th Gen F 7th Gen G 8th Gen M 1st Gen Q 17th Gen D5 266MHz CL 4 tRCD 4 tRP 4 333MHz CL 5 tRCD 5 tRP 5 F7 400MHz CL 6 tRCD 6 tRP 6 E7 400MHz
21. x16 K4B2G1646B HC F7 F8 H9 96 Ball FBGA RoHS amp Halogen Free 800 1066 1333 9x13 3mm NOTES F7 DDR3 800 6 6 6 F8 DDR3 1066 7 7 7 H9 DDR3 1333 9 9 9 Voltage 1 5V DDR2 SDRAM REGISTERED MODULES Module M393T6553GZA C E6 F7 64M x8 9 Lead free 667 800 1 Now 512 64 72 M39316553GZ3 C CC D5 64M x8 9 Lead free 400 533 N 1 Now M393T2950GZA C E6 F7 128M x4 18 Lead free 667 800 Y 1 Now 393 2950673 5 128M x4 18 Lead free 400 533 N 1 Now M393T2953GZA C E6 F7 64M Lead free 667 800 Y 2 Now 1GB 128 72 M393T2953GZ3 C CC D5 64M 8 1 Lead free 400 533 N 2 Now _ M393T2863QZA C E6 F7 128M x8 9 Lead free 667 800 Y 1 Now 9 286 6 7 7 128M x8 9 Lead free amp Halogen free 667 800 Y 1 Jan 09 M39315750GZA C E6 F7 128M x4 36 Lead free 667 800 Y 2 Now M39315750GZ3 C CC D5 128M x4 36 Lead free 400 533 N 2 Now M393T5660QZA C E6 F7 E7 256M x4 18 Lead free 667 800 W 1 Now 2GB 256Mx72 M393T5660EHA C E6 F7 E7 256M x4 18 Lead free amp Halogen free 667 800 W 1 Jan 09 M39315663QZA C E6 F7 E7 128M x8 18 Lead free 667 800 Y 2 Now M393T5663EHA C E6 F7 E7 128M p Lead free amp Halogen free 667 800 Y 2 Jan 09 M393T5160QZA C E6 F7 E7 256M x4 3 Lead free 667 800 Y 2 Now 4GB 512Mx72 _ 9 516 6 7 7 256 4 36 Lead free amp Halogen fre
22. 0 400 2 CL 5 tRCD 5 tRP 5 DDR3 SDRAM F7 DDR3 800 400MHz CL 6 tRCD 6 RP 6 F8 DDR3 1066 533MHz CL 7 tRCD 7 RP 7 DDR3 1066 533MHz CL 8 tRCD 8 RP 8 DDR3 1333 667MHz CL 9 tRCD 9 RP 9 DDR3 1600 800MHz CL 11 tRCD 11 RP 11 D G H Graphics Memory 18 1 8ns 550MHz 04 D Ans 2500MHz 20 2 0ns 500 05 0 5ns 2000MHz 22 2 2ns 450MHz 5C 0 56ns 1800MHz 25 2 5ns 400MHz 06 0 62ns 1600MHz 2C 2 66ns 375MHz 6A 0 66ns 1500 2A 2 86ns 350 07 0 71ns 1400MHz 33 3 3ns 300MHz 7A 0 77ns 1300 36 3 6ns 275MHz 08 0 8ns 1200MHz 40 4 0ns 250MHz 09 0 9ns 1100MHz 45 4 5ns 222 1 1 0ns 1000MHz 50 5A 5 0ns 200MHz 1 1 115 900MHz 55 5 5ns 183MHz 12 1 25ns 800MHz 60 6 0ns 166MHz 14 1 4ns 700MHz 16 1 6ns 600MHz SDRAM Default CL 3 50 5 0ns 200MHz CL 3 60 6 0ns 166MHz CL 3 67 6 7 5 75 7 5ns PC133 133MHz CL 3 XDR DRAM A2 2 4Gbps 36ns 16Cycles B3 3 2Gbps 35ns 20Cycles 3 2Gbps 35ns 24Cycles C4 4 0Gbps 28ns 24Cycles DS Daisychain Sample Mobile SDRAM 60 166MHz CL 75 133 2 CL 80 125 2 CL 105 2 CL 2 1L 105MHz CL 3 15 66MHz CL 2 amp 3 Mobile DDR C3 133MHz CL C2 100MHz CL C0 66MHz CL 3 Note All of Lead free or Halogen free product are in compliance with RoHS www sa
23. 1163QG 84 FBGA 1 8 1 8V 400 500 512Mb 32Mx16 K4N51163QZ 84 FBGA 1 8 1 8V 400 500 des K4D263238K 144 FBGA 2 5 2 5V 200 250 X GDDR1 128Mb K4D263238K 100 TQFP 2 5 2 5V 200 250 8Mx16 K4D261638K 66 TSOPII 2 5 2 5V 200 250 CHER ICM s ER NNI RD DU UNE Au DICEN NOTES 1 Package 2 Architecture 3 Speeds Lead Free or Halogen Free 4 Banks or 8 Banks clock cycle speed bin 04 0 4ns 5 0Gbps 1A 1ns 2Gbps 25 2 5ns 0 8Gbps 05 0 5ns 4Gbps 11 1 1ns 1 8Gbps 2A 2 86ns 0 7Gbps 5C 0 555 3 6Gbps 12 1 25ns 1 6Gbps 33 3 3ns 0 6Gbps 06 0 625 3 2Gbps 14 1 429ns 1 4Gbps 40 4 0ns 0 5Gbps 07 0 71ns 2 8Gbps 16 1 667ns 1 2Gbps 50 5 0ns 0 4Gbps 08 0 83ns 2 4Gbps 20 2 0ns 1Gbps 09 0 90ns 2 2Gbps 22 2 2ns 0 9Gbps 10 Graphics DRAM JANUARY 2009 www samsung com semi dram MOBILE SDRAM COMPONENTS Type SDRAM SDDDR SDRAM SDDDR SDRAM SDDDR SDRAM MMSDDDR SDRAM MMSDDDR NOTES www samsung com semi dram Density 512Mb 512Mb 512Mb 512Mb 256 256 256 256 128 c C ena Er 64Mb 1Gb 2Gb 1 Package Mobile SDRAM POP 90 FBGA DDP 90 FBGA DDPLLF 96 FBGA 96 FBGA LF MCP LEHF 90 FBGA LEOSP FBGA LETDP 54 CSP LEHF gt It will be applied from each different generation by density Organization 32M x16 32M x16 16M x32 16M x32 16M x16 16M x16 8 32 8M x16
24. 12Kx36 K7M163635B 100 TQFP FT SB 55 6 5 133 33 25 Mass Production 256Kx36 K7N803601B 100 TQFP SPB 3 3 85 167 33 25 Not for new designs 512Kx18 K7N801801B 100 TQFP SPB 3 3 3 5 167 3 3 2 5 Not for new designs 256Kx36 K7N803609B 100 TQFP SPB 3 3 2 6 250 3325 Not for new designs 512Kx18 K7N801809B 100 TQFP SPB 3 3 2 6 250 3 3 2 5 Not for new designs 256Kx36 K7N803645B 100 TQFP SPB 2 5 SEH 167 25 Not for new designs Su 512 18 K7N801845B 100 TQFP SPB 2 5 3 5 167 25 Not for new designs 256Kx36 K7N803649B 100 TQFP SPB 2 5 2 6 250 25 Not for new designs 512Kx18 K7N801849B 100 TQFP SPB 2 5 2 6 250 25 Not for new designs 512Kx18 K7M801825B 100 TQFP FT 3 3 6 5 133 83175 Not for new designs 256 36 7 803625 100 TQFP FT 3 3 6 5 133 9 342 5 Not for new designs MU 128Kx36 K7N403609B 100 TQFP SPB a3 3 0 200 3193215 Not for new designs 256Kx18 7 4018098 100 TQFP SPB 99 3 0 200 9925 Not for new designs NOTES All TQFP products are Lead Free NtRAM speed recommendations For 200MHz use 250MHz For 133MHz use 167MHz NtRAM speed recommendation Use 7 5ns Access Time use 6 5ns Access Time Recommended SPB speeds are 250MHz and 167MHz Recommended SB Acess Speed is 7 5ns LATE WRITE RR AND R L SET 1 36 7 323674 119 BGA SP 25 49 7210 300 250 1 5 1 8 5 2Mx18 K7P321874C 119 BGA SP 149 7210 300 250 1 5 Max 1 8 5 a 256Kx36 7 803611 119 BGA SP 313 1 6 300 1 5 Max 2 0 Not for new designs R R ET 512Kx18 K7P801811B 1
25. 19 BGA SP 1 6 300 1 5 2 0 Not for new designs 256Kx36 K7P803666B 119 BGA SP 225 2 0 250 1 5 2 0 Not for new designs 512Kx18 K7P801866B 119 BGA SP 225 2 0 250 1 5 Max 2 0 Not for new designs Late 128Kx36 K7P403622B 119 BGA SP 2 5 2 7 3 0 250 200 167 ISBA Not for new designs 256 18 _ 7 401822 119 BGA SP 313 2 5 2 7 3 0 250 200 167 2 58 3 Not for new designs R L 256Kx18 K7P401823B 119 BGA SP 3 3 6 5 167 2 5 3 3 Not for new designs 22 Synchronous SRAM JANUARY 2009 www samsung com semi sram DDR SYNCHRONOUS SRAM 512K x36 K7D163674B 153 BGA 1 8 25 23 330 300 1 5 1 9 Mass Production E 1M x18 K7D161874B 153 BGA 1 8 25 23 330 300 1 5 1 9 Mass Production id avn 256K x36 K7D803671B 153 BGA 2 5 1 7 1 9 2 1 399809800250 1 5 2 0 for new designs 512K x18 K7D801871B 153 BGA 25 ES 333 330 250 1 5 2 0 for new designs K71641882M 65 FBGA 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production 2 18 K71641884M 165 FBGA 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production 4 71641882 165 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production SIO 2B ee 71643682 65 FBGA 1 8 0 45 0 45 0 45 0 50 300 250 200 167 1 5 1 8 Mass Production 2 2 36 71643684 65 FBGA 1 8 0 45 0 45 0 45 0 50 300 250 200
26. 266 133MHz CL 2 5 B3 DDR333 166MHz CL 2 5 CC DDR400 200MHz CL 3 A2 DDR266 133MHz Cl 2 8 DDR2 amp DDR SDRAM JANUARY 2009 www samsung com semi dram DDR SDRAM COMPONENTS 64Mx4 K4H560438 LCB3 B0 66 TSOP 266 333 Halogen free 256Mb 32Mx8 K4H560838 LCCC B3 66 TSOP 333 400 Halogen free 16Mx16 K4H561638 LCCC B3 66 TSOP 333 400 Halogen free K4H510438F LCB3 BO 66 TSOP 266 333 Halogen free ix K4H510438F HCCC B3 60 FBGA 333 400 Halogen free 512Mb K4H510838F LCCC B3 66 TSOP 333 400 Halogen free K4H510838F HCCC B3 60 FBGA 333 400 Halogen free 32Mx16 K4H511638F LCCC B3 66 TSOP 333 400 Halogen free 128Mb 8Mx16 K4H281638L LCCC CD 66 TSOP 400 500 Halogen free NOTES B0 DDR266 133MHz CL 2 5 B3 DDR333 166MHz CL 2 5 A2 DDR266 133MHz Cl 2 CC 008400 200MHz CL 3 SDRAM COMPONENTS 8 8 K4S640832N UC 75 000 54 TSOP 133 4K K die changing to N die 4Mx16 K4S641632N UC L 75 60 000 54 TSOP 133 143 166 4K K die changing to N die EE 16 8 K4S280832K UC L 75 000 54 TSOP 133 4K l die changing to K die 8Mx16 K4S281632K UC L 75 60 000 54 TSOP 133 166 4K l die changing to K die 64Mx4 K45560432 UC L 75 000 54 TSOP 133 8 H die changing to J die 256Mb 32Mx8 K45560832 UC L 75 000 54 TSOP 133 8 H die changing to J die 16Mx16 455616321 75 60 000 54 TSOP 133 166 8 H die changing to J die 128Mx4 K45510432D UC L 75 000
27. 3 3 345 167 INAS Not for new designs 2 10 7 401809 100 TQFP SPB 3 3 24 250 Shs 255 Not for new designs 2E1D 256 18 K7A401800B 100 TQFP SPB 3 3 345 167 39925 Not for new designs 2 10 K7B401825B 100 TQFP SB 3 3 6 5 133 Shs Za Not for new designs NOTES All TQFP products are Lead Free 2E1D 2 cycle Enable and 1 cycle Disable 2E2D 2 cycle Enable and 2 cycle Disable SPB speed recommendations For 200MHz use 250 2 For 133MHz use 167MHz SB speed recommendation Use 7 5ns Access Time use 6 5ns Access Time www samsung com semi sram JANUARY 2009 Synchronous SRAM 21 _2 6 K7N643645M 100 TQFP 165FBGA SPB 25 216 35 250 167 2 5 Mass Production jus 4Mx18 K7N641845M 100 TQFP 165FBGA SPB 2 5 216 55 250 167 2 5 Mass Production 1Mx36 K7N323635C 100 TQFP 165FBGA SPB 33 25 2 6 35 250 167 33175 Mass Production 2Mx18 K7N321835C 100 TQFP 165FBGA SPB 3737225 2 6 3 5 250 167 330225 Mass Production SC 1 36 7 323631 100 TQFP FT 33 25 Ae 118 3734225 Mass Production 2Mx18 K7M321831C 100 TQFP FT 23725 13 118 33 25 Mass Production 1Mx18 K7N161831B 100 TQFP 165FBGA SPB 515 219 216 35 250 167 EE Mass Production 51236 K7N163631B 100 TQFP 165FBGA SPB 338255 216 35 250 167 Sys 219 Mass Production E 1Mx18 K7M161835B 100 TQFP FT SB ae 6 5 133 215 Mass Production 5
28. 36 K7K1636T2C 165 FBGA 1 8 0 45 450 400 333 Mass Production DDRII CIO 2B NOTES 2 Burst of 2 4B Burst of 4 SIO Separate 1 0 CIO Common 1 0 For DDR II CIO SIO C die use 330 300 or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit For DDR 11 CIO 2 clock latency is available 2 5 clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz www samsung com semi sram JANUARY 2009 DDR I II 23 QDR SYNCHRONOUS SRAM Type QDR II QDR I QDR II QDR 11 NOTES 24 Density Organization Part 72Mb 36Mb 18Mb 36Mb 18Mb For QDR QDR II 2B Burst of 2 4B Burst of 4 For QDR 36Mb C die use 300 250MHz 200MHz instead of 167MHz using a stable DLL circuit 8M x9 4M x18 2M x36 4M x9 2M x18 1M x36 512K x36 1M x36 2M x18 1M x18 512K x36 Number K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M K7R320982C K7R321882C K7R321884C K7R323682C K7R323684C K7R160982B K7R161882B K7R161884B K70161862B K70161864B K7R163682B K7R163684B K70163662B K70163664B 753218 4 753236 4 751618 4 751636 4 Pins Package 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA 165 FBGA Vdd V oo 52 59 52 52 52 52 55 55
29. 55 55 8v 2 5v 8v 2 5v 8 8 8 2 5v 8 2 5v 8 8 8 1 8 Access tCD ns 0 45 0 45 0 50 0 45 0 45 0 50 0 45 0 45 0 45 0 50 0 45 0 45 0 50 0 45 0 45 0 45 0 50 0 45 0 45 0 45 0 45 0 45 0 45 0 45 0 50 0 45 0 45 0 50 0 45 0 45 0 45 0 50 25 25 0 45 0 45 0 50 0 45 0 45 0 45 0 50 25 225 0 45 0 45 0 45 0 45 MHz 250 200 167 250 200 167 300 250 200 167 250 200 167 300 250 200 167 300 250 200 300 250 200 333 300 250 300 250 200 333 300 250 250 200 167 250 200 167 300 250 200 167 167 167 250 200 167 300 250 200 167 167 167 450 400 333 450 400 333 450 400 333 450 400 333 1 0 Voltage Production V Status 1 5 1 8 Mass Producti 1 5 1 8 Mass Producti 1 5 1 8 Mass Producti 1 5 1 8 Mass Producti 1 5 1 8 Mass Producti 1 5 1 8 Mass Producti 1 5 1 8 Mass Producti Mass Producti LAS Mass Producti 1 5 1 8 Mass Producti 1 5 1 8 Mass Producti y ts Mass Producti 518 Mass Producti 5118 Mass Producti 5118 Mass Producti 5118 Mass Producti 5 1 8 Mass Producti bMS Mass Producti SE Mass Producti 55 Mass Producti 5 Mass Producti d Mass Producti 5 Mass Producti For QDR II 72Mb 2B Burst of 2 and 250MHz or 200MHz is recommended 4B Burst of 4 300MHz or 250MHz is recommended For QDR 11 2 clock latency supported 2 5 clock latency can be supported with 450MHz speed QDR I II JANUARY 200
30. 6 0MB sec 40X 6 0MB sec 40X 6 0MB sec 40X 6 0MB sec 12X 16 2MB sec 16 6MB sec PIO Mode 4 16 7MB sec ATA ATAPI E IDE 2M Horizontal Vertical 148 2mm W x 42mm H X 170mm D with Bezel yes yes yes Write 22X 29 7 MB sec 8X 10 8MB sec 16 21 6MB sec 12 16 2MB sec 22X 29 7 MB sec 6X 8 1 MB sec 48X 7 2MB sec 32X 4 8MB sec 10X 1 5MB sec 4X 5 4MB sec 12X 16 2MB sec Ultra DMA Mode 2 33 3MB sec Multiword DMA mode2 Read 6X 21 6MB sec 2X 16 2MB sec 2X 16 2MB sec 2X 16 2MB sec 6X 21 6MB sec 2X 16 2MB sec 6X 21 6MB sec 12X 16 2MB sec 48X 7 2MB sec 40X 6 0MB sec 40X 6 0MB sec 40X 6 0MB sec 40X 6 0MB sec 12X 16 2MB sec 16 6MB sec PIO Mode 4 16 7MB sec ATA ATAPI E IDE 2M Horizontal Vertical 148 2mm W x 42mm H X 170mm D with bezel yes yes no Optical Disk Drives STORAGE SH S223Q Optical Storage DISK FORMAT 1 DISC SUPPORT GENERAL SPECIFICATIONS Data Transfer Rate MAX READ MASTERED DISC CD R CD RW DVD ROM DVD R 3 95GB DVD R 4 7GB Authoring DVD R 4 7GB General DVD RW 4 7GB DVD RW 8 5 GB Double layer DVD R 4 7GB DVD R 8 5GB Double layer DVD RW 4 7GB DVD RAM 4 7GB 2 6GB WRITE DVD 4 7GB DVD R DVD RW DVD RAM Double Layer R Double Layer RW CD R CD RW Print DVD R LF Media Label Data Side Non LF Media Data Side Optional 2 DATA FORMAT CD CD DA CD
31. 9 on on on on on on Comments QDR II 2B QDR II 2B QDR II 4B QDR II 2B QDR II 4B QDR 2 QDR II 2B QDR 1 48 QDR 2 QDR II 4B DR II 2B DR II 2B DR II 4B DRI 2B QDR 1 4B QDR 1 4B QDR Il 4B QDR 1 4B www samsung com semi sram SYNCHRONOUS SRAM ORDERING INFORMATION SAMSUNG Memory Small Classification Organization Organization Vcc Interface Mode Packaging Type Speed Temp Power Package Generation Vcc Interface Mode 1 Memory K 2 Sync SRAM 7 3 Small Classification A Sync Pipelined Burst B Sync Burst D Double Data Rate I Double Data Rate Il Common 1 0 J Double Data Rate Separate 1 0 Double Data Common 1 0 M Sync Burst NtRAM Sync Pipelined Burst NtRAM P Sync Pipe Q Quad Data Rate Quad Data Rate II S Quad Data Rate 49 2 5V LVTTL Hi SPEED 52 2 5V 1 5 1 8V HSTL Burst2 54 2 51 5 8 HSTL 62 2 5V 1 8V HSTL Burst2 64 2 5V 1 8V HSTL Burst4 66 2 5V HSTL R R 74 1 8V 2 5V HSTL 82 1 8V HSTL Burst2 84 1 8V HSTL Burst4 88 1 8V HSTL R R T2 1 8V 2Clock Latency Burst2 T4 1 8V 2Clock Latency Burst4 U2 1 8V 2 5Clock Latency Burst2 U4 1 8V 2 5Clock Latency Burst4 10 Generation 4 5 Density 80 8M 16 18M 40 4M 32 36M 64 72M 1st Generation 2nd Generation B 3rd Generation C 4th Generation D 5th Generati
32. 9 Lead free amp Halogen free 667 800 55V 1 ar09 128M x4 36 Lead free 667 800 1 8V 2 Now 128M x8 18 Lead free 667 800 1 8V 2 Now 128M x8 18 Lead free amp Halogen free 667 800 1 8V 2 Jan 09 128M x8 18 Lead free 667 2 Now 128M x8 18 Lead amp Halogen free 667 800 1 55V 2 eb 09 256M x4 36 Lead free 667 800 DV 2 Now 256M 4 36 Lead amp Halogen free 667 800 DV 2 09 256 x4 36 Lead free 667 55V 2 Now 256M x4 36 Lead free amp Halogen free 667 800 55V 2 Feb 09 128M x8 36 Lead free 667 800 8V 4 Now 128M x8 36 Lead free amp Halogen free 667 800 1 8V 4 Mar09 128M x8 36 Lead free 667 1 55V 4 Now 128M x8 36 Lead amp Halogen free 667 1 55V 4 Mar09 256M x8 18 Lead free 667 800 1 8V 2 Now 256M x8 18 Lead free 667 1 55V 2 Now DDP 512M x4 36 Lead free 667 800 1 8V 4 Now DDP 512M x4 36 Lead free amp Halogen free 667 800 1 8V 4 Mar09 DDP 512M x4 36 Lead free 667 1 55V 4 Now DDP 512M x4 36 Lead free amp Halogen free 667 1 55V 4 09 st 16 x4 18 Lead free 667 800 1 8V 2 Now st 1G x4 18 Lead free 667 1 55V 2 Now 50 Intel C1 AMB 800 Speed option would be limited along with AMB type 60 IDT D1 AMB Module Height 1 2 80 IDT LA AMB 90 Montage D1 AMB JANUARY 2009 www samsung com semi dram DDR2 SDRAM UNBUFFERED MODULES M378T6553GZS C E6 F7 E7 64M x8 8 Lead free 667 800 1 Now 512MB 64Mx64 M37816464QZ3 C E6 F7 E7 64
33. D DVD RAM DVD ROM DVD VIDEO Multi Session Read Write CD EXTRA CD Photo CD VIDEO CD CD TEXT CD G Multi Session Multi Border Read 3 Recording www samsungodd com CD R RW DAO TAO SAO Packet Write RW DVD R RW Sequential Random RW DVD R RW Incremental DAO Restricted Overwrite RW DVD RAM Random GENERAL SPECIFICATIONS Data Transfer Rate MAX Media Type DVD R DVD RW DVD R DUAL DVD R DUAL DVD R DVD RW DVD ROM Single DVD ROM Dual CD ROM CD R US RW HS RW CD RW DVD RAM Data transfer mode Interface Buffer Memory Drive Install Form Size W H L Buffer Protection Lead Free Light Scribe GENERAL SPECIFICATIONS Data Transfer Rate MAX Media Type DVD R DVD RW DVD R DUAL DVD R DUAL DVD R DVD RW DVD ROM Single DVD ROM Dual CD ROM CD R US RW HS RW CD RW DVD RAM Data transfer mode nterface Buffer Memory Drive Install Form Size W H L Buffer Protection Lead Free Light Scribe JANUARY 2009 Write 22X 29 7 MB sec 8X 10 8MB sec 16X 21 6MB sec 12X 16 2MB sec 22X 29 7 MB sec 6X 8 1MB sec 48 7 2MB sec 32 4 8MB sec 10X 1 5MB sec 4X 0 6MB sec 12X 16 2MB sec Ultra DMA Mode 2 33 3MB sec Multiword DMA mode2 6X 21 6MB sec 2X 16 2MB sec 2X 16 2MB sec 2X 16 2MB sec 6X 21 6MB sec 2X 16 2MB sec 6X 21 6MB sec 2X 16 2MB sec 48 7 2MB sec 40X
34. DI STS MMB8GFO1GWBCA 2MA00 2GB SKYMEDI STS MMAGFO2GWMCA 2NA00 2 AGB 166 M die SKYMEDI STS MMAGFO4GWMCA 2NA00 e 8GB SKYMEDI STS MMAGFOBGWMCA 2NA00 SMI STS MM4GR512UACA 2PA00 512MB 4Gb MLC Adie SMI ATP MM4GR512UACU 2PA00 SMI SPIL MM4GR512UACY 2PA00 e SKYMEDI SPIL MM8GRO1GUBCY 2MA00 SKYMEDI STS MM8GRO1GUBCA 2MA00 Mb Se e SC SKYMEDI SPIL MM8GRO2GUBCY 2MA00 600 2GB SKYMEDI STS MM8GRO2GUBCA 2MA00 16G MLC M die SKYMEDI STS MMAGRO2GUDCA 2MA00 8Gb MLC B die SKYMEDI SPIL MM8GRO4GUBCY 2MA00 SE 166 MLC M die SKYMEDI STS MMAGRO4GUDCA 2MA00 8GB 166 MLC M die SKYMEDI STS MMAGRO8GUDCA 2MA00 a eR SEENEN Samsung sales representative for latest product offerings Note All parts are lead free Please contact your loca 18 Flash Cards JANUARY 2009 www samsung com semi flash FLASH PRODUCT ORDERING INFORMATION Small Classification Organization Organization Pre Program Ve Customer Bad Block Generation 1 Memory K 8 Vcc 13 Temp 2 NAND Flash 9 1 65V 3 6V 2 7V 2 5V 2 9V C Commercial rar C 5 0V 4 5V 5 5V D 2 65V 2 4V 2 9V 0 NONE Containing Wafer CHIP BIZ Exception 3 Small Classification E 2 3V 3 6V 1 8 1 65V 1 95V handling code Q 1 8V 1 7V 1 95V T 2 V 3 0V SLC Single Level Cell MLC Multi Level Cell U 27V 3 6V V 33V 3 0V 3 6V 14 Customer Bad Block 7 SLC moviNAND W 2 7V 5 5V 3 0V 5 5V 0 NONE B Include Bad Block 8 MLC moviNAND
35. DVD R 4 7GB General DVD RW DVD R 4 7GB DVD R 8 5GB Double layer DVD RW 4 7GB DVD RAM 4 7GB WRITE DVD 4 7GB DVD R DVD RW DVD RAM Double Layer R CD R CD RW Media Type DVD R DVD RW DVD R DUAL DVD R DUAL DVD R DVD RW DVD ROM Single DVD ROM Dual CD ROM CD R US RW HS RW CD RW DVD RAM Data transfer mode Interface Buffer Memory Drive Install Form Size W L Buffer Protection Lead Free Light Scribe Write 8X 10 8MB sec 8X 10 8MB sec 6X 8 1MB sec 6X 8 1MB sec 6X 8 1MB sec 6X 8 1MB sec 24X 3 6MB sec 24X 3 6MB sec 10X 1 5MB sec 4X 0 6MB sec 5X 6 75MB sec Ultra DMA Mode 2 33 3MB sec Multiword DMA mode2 Read 8X 10 8MB sec 8X 10 8MB sec 6X 8 1 MB sec 6X 8 1 MB sec 8X 10 8MB sec 8X 10 8MB sec 8X 10 8MB sec 8X 10 8MB sec 24X 3 6MB sec 24X 3 6MB sec 24X 3 6MB sec 24X 3 6MB sec 24X 3 6MB sec 5X 6 75MB sec 16 6MB sec PIO Mode 4 16 7MB sec Serial ATA 2M Horizontal 128 W x 12 7 H x 127 D without Bezel yes yes no SN S083B Optical Storage www samsungodd com Data transfer mode nterface Buffer Memory Drive Install Form Size W H L Buffer Protection Lead Free Light Scribe JANUARY 2009 DISK FORMAT GENERAL SPECIFICATIONS 1 DISC TYPE Data Transfer Rate GES Dud Set ect We Gen 5GB 7GB R 3 DVD R 4 768 Authoring DVD R 4 768 General PAD
36. Late write R R SRAM DDR II 1 SRAM QDR Il 1 SRAM MULTI CHIP PACKAGE e Synchronous SRAM Ordering Information Pages 26 27 www samsung com semi mcp NAND DRAM OneNAND DRAM e Flex OneNAND DRAM OneNAND DRAM OneDRAM moviNAND NAND DRAM FUSION MEMORY NOR UtRAM NOR DRAM OneDRAM OneNAND NAND Page 28 FUSION MEMORY www samsung com semi fusion OneNAND Flex OneNAND e moviNAND OneDRAM STORAGE Solid State Drives www samsungssd com e Flash Solid State Drives Hard Disk Drives www samsung com hdd e Hard Disk Drives Pages 29 33 Optical Disk Drives www samsungodd com e External DVD e Internal DVD e Internal COMBO e Internal CD FUSION MCP SRAM FLASH DRAM STORAGE DDR3 SDRAM REGISTERED MODULES 1GB 128Mx72 M393B2873DZ1 C F7 F8 H9 1Gb 128M x8 9 RoHS 800 1066 1333 1 2GB 256Mx72 M393B5673DZ1 C F7 F8 H9 1Gb 128M x8 18 RoHS 800 1066 1333 2 2GB 256Mx72 M393B5670DZ1 C F7 F8 H9 1Gb 256M x4 18 RoHS 800 1066 1333 1 4GB 512Mx72 M393B5173DZ1 C F7 F8 1Gb 128M x8 36 RoHS 800 1066 4 4GB 512Mx72 M393B5170DZ1 C F7 F8 H9 1Gb 256M x4 36 RoHS 800 1066 1333 2 8GB 16 72 M393B1G70DJ1 C F7 F8 2Gb 512M x4 36 RoHS 800 1066 4 1GB 128Mx72 M393B2873EH1 C F7 F8 H9 1Gb 128M x8 9 RoHS amp Halogen Free 800 1066 1333 1 2GB 256Mx72 M393B5673EH1 C F7 F8 H9 1Gb 128M x8 18 RoHS amp H
37. M x16 4 Lead free 667 800 1 Now M37812953GZ3 C E6 F7 E7 64M x8 16 Lead free 667 800 2 Now 1GB 128Mx64 M37812863QZS C E6 F7 E7 128M x8 8 Lead free 667 800 1 Now M378T2863EHS C E6 F7 E7 128M x8 8 Lead free amp Halogen free 667 800 1 Now M37815663QZ3 C E6 F7 E7 128M x8 16 Lead free 667 800 2 Now 2GB 256Mx64 M378T5663EH3 C E6 F7 E7 128M x8 16 Lead free amp Halogen free 667 800 2 Now 4GB 512Mx64 M378T5263A23 C E6 F7 256 x8 16 Lead free 667 800 2 Now NOTES E6 PC2 5300 DDR2 667 CL 5 Voltage 1 8V 7 2 6400 DDR2 800 CL 5 F7 PC2 6400 DDR2 800 CL 6 Module Height 1 2 DDR2 SDRAM UNBUFFERED MODULES ECC Module 512MB 64Mx72 M39116553GZ3 C E6 F7 E7 64M x8 9 Lead free 667 800 1 Now 391 2863073 6 7 7 128 8 9 Lead free 667 800 1 Now 1GB 128 72 M391T2863EH3 C E6 F7 E7 128M x8 9 Lead free amp Halogen free 667 800 1 Jan 09 39175663073 C E6 F7 E7 128M x8 18 Lead free 667 800 2 Now 2GB 256Mx64 M39115663EH3 C E6 F7 E7 128M x8 18 Lead free amp Halogen free 667 800 2 Jan 09 4GB 512 64 M391T5263AZ3 C E6 F7 256M x8 18 Lead free 667 800 2 Now NOTES E6 PC2 5300 DDR2 667 CL 5 Voltage 1 8V 7 2 6400 DDR2 800 CL 5 F7 PC2 6400 DDR2 800 CL 6 DDR2 SDRAM SODIMM MODULES Module Height 1 2 M47016554GZ3 C E6 F7 E7 32M x16 8 Lead free 667 800 2 Now 512MB 64 64 M47016464QZ3
38. MO packing separately Type Packing Type New Marking Component TAPE amp REEL d Other Tray Tube Jar 0 Number Stack 5 Component TRAY Y Mask ROM AMMO PACKING A Module MODULE TAPE amp REEL P MODULE Other Packing M www samsung com semi sram JANUARY 2009 Synchronous SRAM Ordering Information 25 MCP NAND DRAM GE 256Mb x16 x32 2 7V 1 8V 1 8V 107 137FBGA 120FBGA 512Mb x16 x32 2 INI1 8V 1 8V 107 137FBGA 120 136FBGA 256Mb x16 x32 3 0V 1 8V 1 8V 107 137FBGA 152FBGA 1Gb 512Mb x16 x32 2 7V 1 8V 1 8V 107 137FBGA 119 152FBGA 1Gb x32 1 8V 1 8V 137FBGA X 512Mb x16 x32 1 8V 1 8V 107 137FBGA 119 152FBGA 1Gb x16 x32 1 8V 1 8V 107 137FBGA 152 160 168FBGA 4Gb 1Gb x32 2 IN 1 8V 137FBGA 137FBGA MCP OneNAND DRAM 256Mb x32 3 3V 1 8V 1 8V 188FBGA 152FBGA 512Mb 512Mb x16 x32 1 8V 1 8V 167 202FBGA 152FBGA 768Mb x32 1 8V 1 8V 152FBGA E 512Mb x16 x32 1 8V 1 8V 167 202FBGA 168FBGA 1Gb x32 1 8V 1 8V 168FBGA 512Mb x16 x32 1 8V 1 8V 152 160 168 2Gb 1Gb x16 x32 1 8 1 8V 167 202FBGA 152 160 168FBGA 2Gb x32 1 8V 1 8V 152 168FBGA 4Gb 1Gb x16 1 8V 1 8V 202FBGA FlexoneNAND DRAM OneNAND DRAM OneDRAM 266 32 1Gb x16 1 8V 1 8V 1 8V 1 8V 202FBGA 216FBGA 26 MCP
39. Mode D Daisychain Sample SLC Normal 1 5 Bad Block G MLC Normal 0 Normal N ini O blk add 10 blk MLC 1 Dual nCE amp Dual R nB S All Good Block K SLC DDP 3 Tri CE amp Tri R B 0 NONE Containing Wafer CHIP BIZ Exception L MLC DDP 4 Quad nCE amp Single R nB handling code d nCE amp R nB 15 Version N SLC DSP 9 1st block OTP MLC 8 Die Stack A Mask Option 1 Or i SLC 8 Die Stack L Low grade Serial 1 9 A Z S SLC Single SM 10 Generation T SLC SINGLE S B 0 2 Stack MSP W SLC 4 Die Stack 4 5 Density 12 512M 56 256M 16 1G 26 26 46 46 86 86 AG 166 326 CG 64G DG 1286 EG 2566 LG 246 NG 96G ZG 48G 00 NONE 1st Generation A 2nd Generation B 3rd Generation C 4th Generation D 5th Generation 1 d 12 6 7 Organization 00 NONE 08 x8 16 16 FBGA Halogen Free Lead Free C CHIP BIZ D 63 TBGA F WSOP Lead Free G FBGA H TBGA Lead Free 1 ULGA Lead Free 12 17 J FBGA Lead Free L ULGA Lead Free 14 18 TLGA N TLGA2 5 1 Lead Free Q 0 2 Lead Free S TSOP 1 Halogen Free Lead Free TSOP2 U COB MMC V WSOP W Wafer Y TSOP1 Z WELP Lead Free www samsung com semi flash JANUARY 2009 Flash Order
40. Pro Vista XP Mac OS X 10 4 8 or later 15x87x62mm 160 HXSUO16BA 160 HXMUO16DA S2 Portable DIE USB 2 0 Windows 2000 Pro Vista XP Mac OS X 10 4 8 or later 17x111x82mm 320 HXMUO32DA 400 HXMUO40DA 500 HXMUO50DA 30 Hard Disk Drives JANUARY 2009 www samsung com hdd SH S222L Optical Storage DISK FORMAT 1 DISC TYPE READ MASTERED DISC CD R CD RW DVD ROM DVD R 3 95GB DVD R 4 7GB Authoring DVD R 4 7GB General DVD RW 4 7GB DVD R 4 7GB DVD R 8 5GB Double layer DVD RW 4 7GB WRITE DVD 4 7GB DVD R DVD RW DVD RAM Double Layer R DVD RAM 4 7GB 2 6GB CD R CD RW Print CD R DVD R LS Media 2 DATA FORMAT CD CD DA CD ROM MIXED CD CD ROM ENHANCED CD DVD DVD RAM DVD ROM DVD VIDEO Multi Session Read Write CD EXTRA CD Photo CD VIDEO CD CD TEXT CD G Multi Session Multi Border Read Recording CD R RW DAO TAO SAO Packet Write RW DVD R RW Sequential Random RW DVD R RW Incremental DAO Restricted Overwrite RW DVD RAM Random SH S222A Optical Storage DISK FORMAT 1 DISC TYPE READ MASTERED DISC CD R CD RW DVD ROM DVD R 3 95GB DVD R 4 7GB Authoring DVD R 4 7GB General DVD RW 4 7GB DVD R 4 7GB DVD R 8 5GB Double layer DVD RW 4 7GB WRITE DVD 4 7GB DVD R DVD RW DVD RAM Double Layer R DVD RAM 4 7GB 2 6GB CD R CD RW 2 DATA FORMAT CD CD DA CD ROM MIXED CD CD ROM XA ENHANCED CD DV
41. ROM MIXED CD CD ROM XA ENHANCED CD CD EXTRA CD Photo CD VIDEO CD CD TEXT CD G Multi Session DVD DVD RAM DVD ROM DVD VIDEO Multi Session Read Write Multi Border Read Media Type DVD R DVD RW DVD R DUAL DVD R DUAL DVD R DVD RW DVD ROM Single DVD ROM Dual CD ROM CD R US RW HS RW CD RW DVD RAM Access Time Data transfer mode nterface Buffer Memory Drive Install Form Size W H L Buffer Protection Lead Free Light Scribe Write Read 22X 29 7 MB sec 16X 21 6MB sec 8X 10 8MB sec 2X 16 2MB sec 16X 21 6MB sec 2X 16 2MB sec 12X 16 2MB sec 2X 16 2MB sec 22X 29 7 MB sec 16X 21 6MB sec 6X 8 1 MB sec 2X 16 2MB sec 6X 21 6MB sec 2X 16 2MB sec 48X 7 2MB sec 48X 7 2MB sec 40X 6 0MB sec 32X 4 8MB sec 40X 6 0MB sec 10X 1 5MB sec 40X 6 0MB sec 4X 0 6MB sec 40X 6 0MB sec 12X 16 2MB sec 12 16 2MB sec CD 110ms Random DVD 130ms Random SATA 1 5Gbps Serial ATA 2M Horizontal Vertical 148 2mm W X 170mm D X 42mm H with bezel Applied Applied Applied SH S223F Optical Storage DISK FORMAT 1 DISC SUPPORT GENERAL SPECIFICATIONS Data Transfer Rate READ MASTERED DISC CD R CD RW DVD ROM DVD R 3 95GB DVD R 4 7GB Authoring DVD R 4 7GB General DVD RW 4 7GB DVD RW 8 5 GB Double layer DVD R 4 7GB DVD R 8 5GB Double layer DVD RW 4 7GB DVD RAM 4 7GB 2 6GB WRITE DVD 4 7GB DVD R DVD RW DVD RAM
42. alogen Free 800 1066 1333 2 2GB 256Mx72 M393B5670EH1 C F7 F8 H9 1Gb 256M x8 18 RoHS amp Halogen Free 800 1066 1333 1 4GB 512Mx72 M393B5173EH1 C F7 F8 1Gb 128M x8 36 RoHS amp Halogen Free 800 1066 4 4GB 512Mx72 M393B5170EH1 C F7 F8 H9 1Gb 256M x4 36 RoHS amp Halogen Free 800 1066 1333 D 8GB 16 72 M393B1G70EM 1 C F7 F8 2Gb 512M x4 36 RoHS amp Halogen Free 800 1066 4 8GB 16 72 M393B1K70BH1 C F7 F8 H9 2Gb 512M x4 36 RoHS amp Halogen Free 800 1066 1333 2 16GB 26 72 M393B2K70BM1 C F7 F8 4Gb 1024M x4 36 RoHS amp Halogen Free 800 1066 4 1GB 128Mx64 M471B2874DZ1 C F7 F8 H9 1Gb 64M x16 8 RoHS 800 1066 1333 2 2GB 256Mx64 M471B5673DZ1 C F7 F8 H9 1Gb 128M x8 16 RoHS 800 1066 1333 2 1GB 128Mx64 M471B2873EH1 C F8 H9 1Gb 128M x8 8 RoHS amp Halogen Free 1066 1333 1 1GB 128Mx64 M471B2874EH1 C F8 H9 1Gb 64M x16 8 RoHS amp Halogen Free 1066 1333 2 2GB 256Mx64 M471B5673EH1 C F8 H9 1Gb 128M x8 16 RoHS amp Halogen Free 1066 1333 2 4GB 512Mx64 M471B5273BH1 C F8 H9 2Gb 256M 8 16 RoHS amp Halogen Free 1066 1333 2 NOTES F7 DDR3 800 6 6 6 F8 DDR3 1066 7 7 7 H9 DDR3 1333 9 9 9 Voltage 1 5V DDR3 SDRAM UNBUFFERED MODULES 1GB 128Mx64 M378B2873DZ1 C F8 H9 1Gb 128M x8 8 RoHS 1066 1333 1 2GB 256Mx64 M378B5673DZ1 C F8 H9 1Gb 128M x8 16 RoHS 1066 1333 2 1GB 128Mx64 M378B2873EH1 C F8 H9 1Gb 128M x8 8 RoHS amp Halogen Free 1066 1333 1 2GB 256Mx64 M378B5673EH1 C F8 H9 1Gb 128M x8 16 RoHS
43. amp Halogen Free 1066 1333 2 4GB 512Mx64 M378B5273BH1 C F8 H9 2Gb 256M x8 16 RoHS amp Halogen Free 1066 1333 2 DDR3 SDRAM UNBUFFERED MODULES ECC 1GB 128Mx72 M391B2873DZ1 C F8 H9 1Gb 128M x8 9 RoHS 1066 1333 1 2GB 256Mx72 M391B5673DZ1 C F8 H9 1Gb 128M x8 18 RoHS 1066 1333 2 1GB 128 72 M391B2873EH1 C F8 H9 1Gb 128M x8 9 RoHS amp Halogen Free 1066 1333 1 2GB 256Mx72 M391B5673EH1 C F8 H9 1Gb 128M x8 18 RoHS amp Halogen Free 1066 1333 2 4GB 512Mx72 M391B5273BH1 C F8 H9 2Gb 256M x8 18 RoHS amp Halogen Free 1066 1333 2 4 DDR3 SDRAM JANUARY 2009 www samsung com semi dram d 1Gb 256M x4 K4B1G0446D HC F7 F8 H9 82 Ball FBGA RoHS amp Halogen Free 800 1066 1333 9x11mm 1Gb 128M x8 K4B1G0846D HC F7 F8 H9 82 Ball FBGA RoHS amp Halogen Free 800 1066 1333 9x11mm 1Gb 64M x16 KA4B1G1646D HC F7 F8 H9 100 Ball FBGA RoHS amp Halogen Free 800 1066 1333 9x13 3mm 1Gb 256M x4 K4B 1G0446E HC F7 F8 H9 78 Ball FBGA RoHS amp Halogen Free 800 1066 1333 7 5x11mm 1Gb 128M x8 K4B 1G0846E HC F7 F8 H9 78 Ball FBGA RoHS amp Halogen Free 800 1066 1333 7 5 11 1Gb 64M x16 K4B1G1646E HC F7 F8 H9 96 Ball FBGA RoHS amp Halogen Free 800 1066 1333 7 5x13 3mm 2Gb 512M x4 K4B2G0446B HC F7 F8 H9 78 Ball FBGA RoHS amp Halogen Free 800 1066 1333 9x11 5mm 2Gb 256M x8 K4B2G0846B HC F7 F8 H9 78 Ball FBGA RoHS amp Halogen Free 800 1066 1333 9x11 5mm 2Gb 128M
44. c DVD RW X 10 8MB sec DVD ROM Single X 10 8MB sec DVD ROM Dual 6X 8 1 MB sec CD ROM 24 3 6MB sec CD R 24X 3 6MB sec 24X 3 6MB sec US RW 24X 3 6MB sec 24X 3 6MB sec HS RW 10X 1 5MB sec 24 3 6MB sec CD RW 4X 0 6MB sec 24X 3 6MB sec DVD RAM 5X 6 75MB sec Data transfer mode nterface Buffer Memory Drive Install Form Size W H L GENERAL SPECIFICATIONS Data Transfer Rate MAX Ultra DMA Mode 2 33 3MB sec Multiword DMA mode2 16 6MB sec PIO Mode 4 16 7MB sec ATA ATAPI E IDE 2M Horizontal Vertical 128 X 12 7 X 129 0 Buffer Protection yes Lead Free yes Light Scribe no DVD R DL 8 568 DVD RW 4 7GB DVD R 3 9568 Mediaiype Write Read DVD R 4 7GB Authoring DVD R 4 7GB General DVD R 8X 10 8MB sec 8X 10 8MB sec DVD R DL 8 5GB DVD RW DVD RAM 4 7GB DVD RW X 10 8MB sec X 10 8MB sec DRM Print CD R DVD R Light Scribe Media DVD R DUAL 6X 8 1MB sec 8X 10 8MB sec 2 DATA FORMAT DVD R X 8 1MB sec 8X 10 8MB sec CD CD DA CD ROM MIXED CD CD ROM XA ENHANCED CD DVD RW X 8 1MB sec X 10 8MB sec o EXTRA CD Photo CD VIDEO CD CD TEXT CD G DVD ROM Single X 10 8MB sec ulti Session DVD ROM Dual 8X 10 8MB sec DVD DDVD RAM DVD ROM DVD VIDEO Multi Session Read Write Multi Border Read Write CD ROM 24X 3 6MB sec i DAO TAO SAO Packet Write RW DVD R RW Sequential Random RW US RW 24X 3 6MB sec 24X 3 6MB sec
45. e 667 800 Y 2 Jan 09 M393T1G60QJA C D5 E6 DDP 512M x4 36 Lead free 533 667 Y 4 Now 8GB 16 72 M393T1G60EMA C D5 E6 DDP 512M x4 36 Lead free amp Halogen free 533 667 4 Jan 09 M393T1K66AZA C E6 F7 st 1G x4 18 Lead free 667 800 2 Now NOTES CC PC2 3200 DDR2 400 CL 3 2 5300 DDR2 667 CL 5 F7 PC2 6400 DDR2 800 CL 6 E7 PC2 6400 DDR2 800 CL 5 D5 PC2 4200 DDR2 533 CL 4 Voltage 1 8V Module Height 1 2 www samsung com semi dram JANUARY 2009 DDR3 amp DDR2 SDRAM 5 DDR2 SDRAM VLP REGISTERED MODULES Module Parity Density Organization Part Number 512MB 64 72 M39216553GZA C E6 F7 M39212953GZA C E6 F7 M39212950GZA C E6 F7 1GB 128Mx72 392T2863QZA C E6 F7 39212863EHA C E6 F7 M39215660QZA C E6 F 7 M392T5660EHA C E6 F7 2GB 256Mx72 M39215663QZA C E6 F7 M39215663EHA C E6 F7 39215160QJA C E6 F7 4GB 512Mx72 39215160EMA C E6 F7 8GB 16x72 M392T1G6O0EEH C D5 E6 Composition Compliance Speed Mbps Register Rank Production 64M x8 9 Lead free 667 800 y 1 Now 64M x8 1 Lead free 667 800 Y 2 Now 128M x4 18 Lead free 667 800 Y 1 Now 128M x8 9 Lead free 667 800 Y 1 Now 128M x8 9 Lead free amp Halogen free 667 800 Y 1 Feb 09 256M x4 18 Lead free 667 800 Y 1 Now 256M x4 18 Lead free amp Halogen free 667 800 Y 1 Feb 09 128M x8 1 Lead free 667 800 Y 2 Now 128M x8 18 Lead free amp Halogen free 667 800 Y 2 Mar 09 DDP 512M x4 18 Lead free 667 800 v
46. eral Dp DVD R DL 8 5GB DVD RW DVD RAM 4 7GB DVD RW 8X 10 8MB sec 8X 10 8MB sec WRITE DVD4 7GB DVD R RW DVD RAM DVD R DL 8 5GB DVD R DUAL 6X 8 1 MB sec 6X 8 1 MB sec CD R RW DVD R DUAL 6X 8 1MB sec 6X 8 1 MB sec 2 DATA FORMAT DVD R 8X 10 8MB sec 8X 10 8MB sec CD CD DA CD ROM MIXED CD CD ROM XA ENHANCED CD DVD RW 6X 8 1MB sec 8X 10 8MB sec CD EXTRA CD Photo CD VIDEO CD CD TEXT CD G DVD ROM Single 8X 10 8 Multi Session DVD DVD RAM DVD ROM DVD VIDEO Multi Session Read Write DVD ROM Dual 8X 10 8MB sec Multi Border Read Write CD ROM gt 24X 3 6MB sec 3 Recording mode CD R 24X 3 6MB sec 24X 3 6MB sec CD R RW DAO TAO SAO Packet Write RW US RW 24X 3 6MB sec 24X 3 6MB sec DVD R RW Sequential Random RW HS RW 10X 1 5MB sec 24X 3 6MB sec DVD R RW Incremental DAO Restricted Overwrite RW CD RW AX 0 6MB sec 24X 3 6 DVD RAM 5X 6 75MB sec 5X 6 75MB sec Access Time CD 150ms Random DVD 160ms Random Ultra DMA Mode 2 33 3MB sec Multiword DMA mode2 morie 16 6 PIO Mode 4 16 7MB sec Interface Serial ATA Buffer Memory 2M Drive Install Form Horizontal Vertical Size W H L 128 W x 12 7 H x 127 D without Bezel Buffer Protection yes Lead Free yes Light Scribe yes SN S082H Optical Storage DISK FORMAT GENERAL SPECIFICATIONS CD CD DA CD ROM MIXED CD CD ROM XA ENHANCED CD ERU ee Phot
47. es 1TB 7200 SATA 2 32 HE103UJ 750 7200 SATA 2 57 7530 500 7200 SATA 2 16 5021 320 7200 SATA 2 16 HE322HJ 250 7200 SATA 2 16 HE252HJ www samsung com hdd JANUARY 2009 Hard Disk Drives 29 STORAGE 2 5 Hard Disk Drives 320 5400 SATA 8 320 K 250 5400 SATA 8 251 250 5400 SATA 8 250 160 5400 SATA 8 160 55 120 5400 SATA 8 HM121HI 80 5400 SATA 8 08061 60 5400 SATA 8 06161 160 5400 8 HM160HC M5P 120 5400 PATA 8 HM121HC 80 5400 PATA 8 HM080GC 160 5400 SATA 8 160 805 120 5400 SATA 8 HM120II 80 5400 SATA 8 080 160 5400 8 160 80 120 5400 8 1201 80 5400 8 HM080HC 120 5400 SATA 8 120 605 100 5400 SATA 8 100 60 5400 SATA 8 HMO60HI 120 5400 PATA 8 HM120JC M60 100 5400 PATA 8 HM100JC 60 5400 PATA 8 HMO60HC 1 8 Hard Disk Drives PATA 2 5061 E 2 5061 2 5041 s CEATA 2 HSO41HP N1 3600rpm 3600 PATA 2 HS031GA CEATA 2 HS031GP PATA 2 HS021GA a CEATA 2 HS021GP PATA 2 HSO6OHB Bs CEATA 2 HS060HQ PATA 2 5040 m CEATA 2 HS040HQ N1 4200rpm 4200 2 HS030GB CEATA 2 HS030GQ PATA 2 HS020GB 2 CEATA 2 HS020GQ External Hard Disk Drives 51 Mini L 120 HXSU012BA USB 2 0 Windows 2000
48. f 2 Now DDP 512M x4 18 Lead free amp Halogen free 667 800 Y 2 Mar 09 QDP 1G x4 18 Lead free amp Halogen free 533 667 4 0209 DDR2 SDRAM FULLY BUFFERED MODULES Density Organization Part Number 512MB 64Mx72 M39516553GZ4 CE6 F7 E7 50 60 M39512953GZ4 CE6 F7 E7 50 60 M39512863QZ4 CE6 F7 E7 60 80 90 1GB 128Mx72 M39512863EH4 CE6 F7 E7 60 80 90 M39512863QZ4 YE680 M39512863EH4 YE6 F7 80 M39515750GZ4 CE6 F7 E7 50 60 M39515663Q74 CE6 F7 E7 60 80 90 2GB 256Mx72 M39515663EH4 C E6 F7 E7 60 80 90 M395T5663QZ4 YE680 M39515663EH4 YE6 F7 80 39515160Q74 CE6 F7 E7 60 80 90 395T5160EH4 C E6 F7 E7 60 80 90 395 5160074 680 395T5160EH4 YE6 F7 80 395T5163QZ4 CE6 F7 E7 80 39515163EH4 CE6 F7 E7 80 395T5163QZ4 YE680 395T5163EH4 YE680 39515263A74 CE6 F7 60 80 395T5263A74 YE680 M395T1G60QJ4 CE6 F7 80 M395T1G60EM4 CE6 F7 80 M395T1G60QJ4 YE680 M395T1G60EM4 YE680 M3951 1K66AZ4 CE6 F7 60 80 M395T1K66AZ4 YE680 NOTES C AMB Voltage 1 5V C DRAM Voltage 1 8V Y AMB Voltage 1 5V Available only with CE6 Y DRAM Voltage 1 55V Available only with CE6 4GB 512Mx72 8GB 1Gx72 6 DDR2 SDRAM Composition Compliance Speed Mbps Voltage Rank Production 64M x8 9 Lead free 667 800 1 8V 1 Now 64 8 18 Lead free 667 800 DV 2 ow 128M x8 9 Lead free 667 800 DV 1 ow 128M x8 9 Lead free amp Halogen free 667 800 DV 1 Jan 09 128M x8 9 Lead free 667 55V 1 Now 128M x8
49. ing Information 19 LOW POWER ASYNCHRONOUS SRAM 4Mx16 156416 48 1 8 70 40 180 20 09 UtRAM 64Mb 4 16 1564161 48 3 0 70 40 180 20 09 4Mx16 K1B6416B2E 54 FBGA 1 8 104Mhz 40 180 20 09 4Mx16 K1C6416B2E 54 FBGA 1 8 104Mhz 40 180 20 09 64Mb 4Mx16 K1C6416B8E 54 FBGA 1 8 104Mhz 40 180 20 09 2 16 K1S3216BCF 48 FBGA 1 8 70 35 120 30 09 UtRAM 32Mb 2Mx16 K1S32161CF 48 FBGA 3 0 70 35 100 30 09 2 16 K1B3216B2F 54 FBGA 1 8 104Mhz 35 100 30 09 2 16 K1C3216B2F 54 FBGA 1 8 104Mhz 35 100 30 09 UtRAM2 32Mb 2 16 K1C3216B8F 54 FBGA 1 8 104Mhz 35 100 30 09 1 16 151616 1 48 1 8 70 35 80 30 09 UtRAM 16Mb 1Mx16 K15161611C 48 FBGA 3 0 70 35 95 30 09 1 16 K1C1616B2C 54 FBGA 1 8 104Mhz 35 100 30 09 UtRAM2 16Mb 1 16 K1C1616B8C 54 FBGA 1 8 104Mhz 35 100 30 09 HIGH SPEED ASYNCHRONOUS SRAM Hre K6R4016C1D 44 50 44 TSOP2 5 10 65 55 20 5 Mass Production K6R4016V1D 44 50 44 TSOP2 10 80 65 20 5 1 2 Mass Production K6R4004C1D 32 50 5 10 12 65 55 20 5 EOL 4Mb 1 4 K6R4004V1D 32 50 3 3 8 10 80 65 20 5 EOL TS K6R4008C1D 36 SOJ 44 TSOP2 5 10 65 55 20 5 Mass Production K6R4008V1D 36 50 44 TSOP2 BS 10 80 65 20 5 Mass Production 20 Asycnhronous SRAM JANUARY 2009 www samsung com semi sram SYNCHRONOUS PIPELINED BURST AND FLOW THRU
50. msung com semi dram JANUARY 2009 DRAM Ordering Information 13 MODULE DRAM ORDERING INFORMATION SAMSUNG Memory P Data bits DRAM Component Type Number of Banks Bit Organization AMB Vendor Speed Temp amp Power PCB Revision Package Component Revision 1 Memory Module M 5 Depth 9 Package 2 DIMM Type 3 DIMM 4 SODIMM 3 Data bits 12 x72 184pin Low Profile Registered DIMM 63 x63 PC100 PC133 SODIMM with SPD for 144pin 64 x64 PC100 PC133 SODIMM with SPD for 144pin Intel JEDEC 66 x64 Unbuffered DIMM with SPD for 144pin 168pin Intel JEDEC 68 x64 184pin Unbuffered DIMM 70 x64 200pin Unbuffered SODIMM 71 x64 204pin Unbuffered SODIMM 74 x72 ECC Unbuffered DIMM with SPD for 168pin Intel JEDEC 77 x12 ECC PLL Register DIMM with SPD for 168pin Intel PC 100 78 x64 240pin Unbuffered DIMM 81 x72 184pin ECC unbuffered DIMM 83 x72 184pin Registered DIMM 90 x72 ECC PLL Register DIMM 91 x72 240pin ECC unbuffered DIMM 92 x72 240pin VLP Registered DIMM 93 x72 240pin Registered DIMM 95 x72 240pin Fully Buffered DIMM with SPD for 168 JEDEC PC133 09 8M for 128Mb 512Mb 17 16M for 128Mb 512Mb 16 16M 28 128M 29 128M for 128Mb 512Mb 32 32M 33 32M for 128Mb 512Mb 51 512M 52 512M for 512Mb 2Gb 56 256M 57 256M for 512Mb 2Gb 59 256M for 128Mb 512Mb 64 64M 65 64M for 128Mb 512Mb 1G 1G 1K 1G
51. ng out of the application or use of any product or circuit and specifically disclaims any and all liability including without limitation any consequential or incidental damages Copyright 2009 Samsung and Samsung Semiconductor Inc are registered trademarks of Samsung Electronics Co Ltd All other names and brands may be claimed as the property of others The appearance of all products dates figures diagrams and tables are subject to change at any time without notice BR 09 ALL 001 Printed 01 09 Samsung Semiconductor Inc 3655 North First Street San Jose CA 95134 1713 www samsung com semi us
52. o CD VIDEO CD CD TEXT CD G Media Type Write Read DVD DVD RAM DVD ROM DVD VIDEO Multi Session Readiwrite DVD R SE SE Multi Border Read Write DVD RW 8X 10 8MB sec 8X 10 8MB sec DVD R DUAL 6X 8 1MB sec 8X 10 8MB sec DVD R DUAL 6X 8 1MB sec 8X 10 8MB sec DVD R 8X 10 8MB sec 8X 10 8MB sec DVD RW 6X 8 1MB sec 8X 10 8MB sec DVD ROM Single 8X 10 8MB sec DVD ROM Dual 8X 10 8MB sec CD ROM 24 3 6MB sec CD R 24 3 6MB sec 24X 3 6MB sec US RW 24 3 6MB sec 24X 3 6MB sec HS RW 10X 1 5MB sec 24X 3 6MB sec CD RW 4X 0 6MB sec 24X 3 6MB sec DVD RAM 5X 6 75MB sec 5X 6 75MB sec EE Ultra DMA Mode 2 33 3MB sec Multiword DMA mode2 16 6MB sec PIO Mode 4 16 7MB sec nterface ATA ATAPI E IDE Buffer Memory 2M Drive Install Form Horizontal Size W H L 128 W x 12 7 H x 127 D without Bezel Buffer Protection yes Lead Free yes Light Scribe no 34 Optical Disk Drives JANUARY 2009 www samsungodd com SN M242D Optical Storage DISK FORMAT CD DA CD ROM Video CD CD I FMV CD ROM XA Multi Session Disc GENERAL SPECIFICATIONS Data Transfer Rate MAX DVD ROM DVD VIDEO DVD R DVD RW CD R CD RW DVD RAM USB 2 0 5 5084 Optical Storage DISK FORMAT 1 DISC TYPE READ MASTERED DISC CD R CD RW DVD ROM DVD R 4 7GB Media Type Write Read DVD R 8X 10 8MB sec DVD RW X 10 8MB sec DVD R DUAL X 8 1 MB sec DVD R DUAL 6X 8 1 MB sec DVD R 8X 10 8MB se
53. on 6 7 Organization Ae n n 08 x8 09 x9 18 x18 322X32 36 x36 12 Package 8 9 Vcc Interface Mode 00 3 3V LVTTL 2E1D WIDE 01 3 3V LVTTL 2E2D WIDE 08 3 3V LVTTL 2E2D Hi SPEED 09 3 3V LVTTL Hi SPEED 11 3 3V HSTL R R 12 3 3VHSTL R L 14 3 3V HSTL R R Fixed 70 22 3 3V LVTTL R R 23 3 3V LVTTL R L 25 3 3V LVTTL SB FT WIDE 30 1 8 2 5 3 3V LVTTL 2E1D 31 1 8 2 5 3 3V LVTTL 2E2D 35 1 8 2 5 3 3V LVTTL SB FT 44 2 5V WITL 2E1D 45 2 5V LVTTL 2E2D BGA FCBGA PBGA G BGA FCBGA FBGA LF F FBGA E FBGA LF Q DQPF L QFP LF C CHIP BIZ W WAFER 13 Temp Power COMMON Temp Power 0 NONE NONE Containing of error handling code C Commercial Normal E Extended Normal I Industrial Normal WAFER CHIP BIZ Level Division 0 NONE NONE 1 Hot DC sort 2 Hot DC selected AC sort 14 15 Speed Sync Burst Sync Burst NtRAM lt Mode is R L gt Clock Accesss Time 65 6 5ns 70 7ns 75 7 5ns 80 8ns 85 8 5ns Other Small Classification Clock Cycle Time 10 100MHz 11 117MHz 13 133MHz 14 138MHz 16 166MHz 20 200MHz 25 250MHz 26 250MHz 1 75ns 27 275MHz 30 300MHz 33 333MHz 35 350MHz 37 375MHz 40 400MHz t CY CLE 42 425MHz 45 450MHz 50 500MHz except Sync Pipe 16 Packing Type 16 digit Common to all products except of Mask ROM Divided into TAPE amp REEL In Mask ROM divided into TRAY AM
54. oning into SLC and MLC areas so the chip can be configured for storage or high speed access KFG4GH6Q4M DEB8000 63 FBGA 10x13 X16 1 8v extended 83Mhz 1 120 FSR software required 4Gb Flex OneNAND KFG4GH6U4M DIB6000 63 FBGA 10x13 X16 BV Industrial 66Mhz 1 120 FSR software required KFM4GH6Q4M DEB8000 63 FBGA 10x13 X16 1 8v extended 83Mhz 1 120 Muxed FSR SW req 8Gb DDP Flex OneNAND KFH8GH6U4M DIB6000 63 FBGA 10x13 X16 3 3V Industrial 66Mhz 1 120 FSR software required T amp R MOQ 2Kpcs Please contact your local Samsung sales representative for latest product offerings amp information on support amp availability NOTE All parts are lead free moviNAND Combining high density MLC NAND flash with an MMC controller in a single chip that has an MMC interface moviNAND delivers dense cost effective storage for embedded applications 1GB 1 8 3 3 FBGA 12 0x18x1 2t x8 2GB 1 8 3 3 FBGA 12 0x18x1 2t x8 4GB 1 8 3 3 FBGA 12 0x18x1 2t x8 8GB 1 8 3 3 FBGA 12 0x18x1 3t x8 16GB 1 8 3 3 FBGA 14 0x18 0 x8 Please contact your local Samsung sales representative for latest product offerings NOTE All parts are lead free OneDRAM OneDRAM is a dual port low power DRAM with an SRAM buffer interface and is optimal for high performance high density mobile applications PKG Combination 2G OneNAND 512Mb MDDR 512MB OneDRAM KJA51Z23PC AAO 14x14 B port x16 SDR DDR KENE 512Mb PKG Combination 2G NAND
55. rom each different generation by density F 60 FBGA LF 15 10X10mm 1 side K 72 FBGA LF L 60 FBGA POP SACTOS LEDDP 0 15 S POP DDP X POP LEDDB HF Halogen Free 128Mb 14th 256Mb 13th 512Mb 8th 1Gb 5th generation JANUARY 2009 Pins Package 54 FBGA 54 FBGA 60 FBGA 60 FBGA 54 FBGA 90 FBGA 54 FBGA 90 FBGA 54 FBGA 60 FBGA 90 FBGA 90 FBGA 54 FBGA 54 FBGA 54 FBGA 54 FBGA 60 FBGA 60 FBGA 60 FBGA 90 FBGA 152 FBGA 90 FBGA 152 FBGA 2 Temp amp Power Refresh 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 8K 4K 4K 4K 4K 8K 8K 8K 8K 8K 8K 8K 8K C Commercial 25 70 C Normal L Commercial Low i TCSR F Commercial Low i TCSR amp PASR amp DS E Extended 25 85 C Normal N Extended Low i TCSR G Extended Low i TCSR amp PASR amp DS I Industrial 40 85 C Normal P Industrial Low H Industrial Low i TCSR amp PASR amp DS Power 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 3 0V 2 5V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 1 8V 3 4 Speed Mobile SDRAM 60 166MHz CL 3 75 133MHz CL 3 80 125MHz CL 3 1H 105MHz CL 2 1L 105MHz CL 3 15 66MHz CL 2 amp 3 Mobile DDR C3 133MHz CL C2 100MHz CL 3 C0 66MHz CL3 Mobile SDRAM 11 COMPONENT DRAM ORDERING INFORMATION SAMSUNG Memory Temp amp Power Interface VDD VDDQ Bit Organization N
56. umber of Internal Banks 1 Memory K 08 x8 9 Package Type 15 x16 2CS 2 DRAM 4 16 x16 DDR SDRAM 3 DRAM Type B DDR3 SDRAM D GDDR SDRAM G GDDR5 SDRAM H DDR SDRAM J GDDR3 SDRAM M Mobile SDRAM 90082 SDRAM S SDRAM T DDR SDRAM U GDDR4 SDRAM V Mobile DDR SDRAM Power Efficient Address W gDDR3 SDRAM X Mobile DDR SDRAM Y XDR DRAM Z Value Added DRAM 26 x4 Stack Standard 27 x8 Stack Standard 30 x32 2CS 2CKE 31 x32 2CS 32 x32 of Internal Banks 2 2 Banks 3 4 Banks 4 8 Banks 5 16 Banks Interface VDD VDDQ 4 Density 10 1G 8K 32ms 16 16M 4K 64ms 26 128M 4K 32ms 28 128M 4K 64ms 32 32M 2K 32ms 50 512M 32K 16ms 51 512M 8K 64ms 52 512M 8K 32ms 54 256M 16K 16ms 55 256M 4K 32ms 56 256M 8K 64ms 62 64M 2K 16ms 64 64M 4 64 5 68 768M 8K 64ms 16 1G 8K 64ms 2G 2G 8K 64ms 4G 4G 8 64 5 2 LVTTL 3 3V 3 3V 4 LVTTL 2 5V 2 5V 5 SSTL 2 1 8V 1 8V 6 SSTI 153155 VIS 8 SSTL 2 2 5V 2 5V A SSTL 2 5V 1 8V F POD 15 1 5V 1 5V H SSTL 2 DLL 3 3V 2 5V M LVTTL 1 8V 1 5V N LVTTL 1 5V 1 5V P LVTTL 1 8V 1 8V Q SSTL 2 1 8V 1 8V R SSTL 2 2 8V 2 8V U DRSL 1 8V 1 2V Revision 5 Bit Organization 02 x2 04 x4 06 x4 Stack Flexframe 07 x8 Stack Flexframe A 2nd Generation B 3rd Generation C 4th Generation D
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