CBC012 EnerChip
Contents
1. CYMBET CORPORATION EnerChip CBC012 Rechargeable Solid State Energy Storage 12uAh 3 8V Features e All Solid State Construction e SMT Package and Process e Lead Free Reflow Tolerant e Thousands of Recharge Cycles e Low Self Discharge e Eco friendly ROHS compliant Electrical Properties Output voltage nominal 3 8V Capacity nominal 12uAh Charging source 4 00V to 4 15V Recharge time to 80 10 minutes Charge discharge cycles gt 5000 to 10 DOD Physical Properties Package size DFN Operating temperature Storage temperature 5 mm x 5 mm x 0 9 mm 20 C to 70 C 40 C to 125 C Applications e Standby supply for non volatile SRAM real time clocks controllers supply supervisors and other system critical components e Wireless sensors and RFID tags and other powered low duty cycle applications e Localized power source to keep microcontrollers and other devices alert in standby mode e Power bridging to provide backup power to system during exchange of primary batteries e Embedded Energy where bare die can be embedded into modules or co packaged with other ICs Pin Number s a ee es Note NIC No Internal Connection aie ENERCHIP CBC012 D5C 200941 5 mm x 5 mm DFN SMT Package 2 8 mm x 3 5 mm Bare Die The EnerChip CBCO12 is a surface mount solid state thin film rechargeable energy storage device rated for 12uAh at 3 8V It is ideal as a localiz2. FeO x Eii pum m O e l CLA hok u at Loe q F Loa 1 BOTTOM VIEW Pin Number s O o Notes 1 All linear dimensions are in millimeters 2 Drawing is subject to change without notice Note NIC No Internal Connection Printed Circuit Board PCB Layout Guidelines and Recommendations Electrical resistance of solder flux residue on PCBs can be low enough to partially or fully discharge the backup energy cell and in some cases can be comparable to the load typically imposed on the cell when delivering power to an integrated circuit in low power mode Therefore solder flux must be thoroughly washed from the board following soldering The PCB layout can make this problem worse if the cell s positive and negative terminals are routed near each other and under the package where it is difficult to wash the flux residue away An undesirable example is shown in Figure 1 The negative connection on the EnerChip is routed from the negative pad to a via placed under the package near the positive pad In this scenario solder flux residue can wick from the positive solder pad covering both the positive pad and the via This results in a high resistance current path between the EnerChip terminals This current path will make the cell appear to be defective or make the application circuit appear to be drawing too much current To avoid this situation make sure positive and negative traces are routed outside of the packa
3. d on the PCB that could contact the exposed die pad on the D5C package Again this is to reduce the possible number and severity of leakage paths between the EnerChip terminals Figure 3 Recommended PCB layout to accommodate CBC012 package Soldering Rework and Electrical Test Refer to the Cymbet User Manual for soldering rework and replacement of the EnerChip on printed circuit boards and for instructions on in circuit electrical testing of the EnerChip 2009 2010Cymbet Corporation Tel 1 763 633 1780 www cymbet com DS 72 02 RevA Page 4 of 5 EnerChip CBC012 Solid State Energy Storage Ordering Information CBCO12 D5C 12uAh EnerChip in 6 pin M8 DFN tube Package for new designs CBCO12 D5C TR 12uAh EnerChip in 6 pin M8 DFN Tape Reel Package for new designs CBCO12 D5C WP 12uAh EnerChip in 6 pin M8 DFN Waffle Pack Package for new designs CBCO12 BDC WP 12uAh EnerChip Bare Die Waffle Pack Contact Cymbet CBCO12 BUC WP 12uAh EnerChip Bumped Bare Die Waffle Pack Contact Cymbet Disclaimer of Warranties As Is The information provided in this data sheet is provided As Is and Cymbet Corporation disclaims all representations or warranties of any kind express or implied relating to this data sheet and the Cymbet EnerChip product described herein including without limitation the implied warranties of merchantability fitness for a particular purpose non infringement title or any warranties arising out of cours
4. e of dealing course of performance or usage of trade Cymbet EnerChip products are not approved for use in life critical applications Users Shall confirm suitability of the Cymbet EnerChip product in any products or applications in which the Cymbet EnerChip product is adopted for use and are solely responsible for all legal regulatory and safety related requirements concerning their products and applications and any use of the Cymbet EnerChip product described herein in any such product or applications Cymbet the Cymbet Logo and EnerChip are trademarks of Cymbet Corporation All Rights Reserved 2009 2010Cymbet Corporation Tel 1 763 633 1780 www cymbet com DS 72 02 RevA Page 5 of 5
5. ed on board power source for SRAMS real time clocks and microcontrollers which require standby power to retain time or data It is also suitable for RFID tags smart sensors and remote applications which require a miniature low cost and rugged power source For many applications the CBCO12 is a superior alternative to button cell batteries and Super capacitors Because of their solid state design EnerChip storage devices are able to withstand solder reflow temperatures and can be processed in high volume manufacturing lines similar to conventional semiconductor devices There are no harmful gases liquids or special handling procedures in contrast to traditional rechargeable batteries The CBCO12 is based on a patented all solid state rechargeable energy cell with a nominal 3 8V output Recharge is fast and simple with a direct connection to a 4 1V voltage source and no current limiting components Recharge time is 10 minutes to 80 capacity Robust design offers thousands of charge discharge cycles The CBCO12 is packaged ina 5 mm x 5 mm 6 pin DFN package It is shipped in tubes tape and reel or waffle pack trays 6 5 4 mi 1 2 3 CBC012 Schematic Representation Top View 2009 2010 Cymbet Corporation Tel 1 763 633 1780 www cymbet com DS 72 02 Rev A Page 1of5 EnerChip CBC012 Solid State Energy Storage Operating Characteristics a a a E E E E E Puse Discharge Curent se o Cell Resis
6. ge footprint as shown in Figure 2 to ensure that flux residue will not cause a discharge path between the positive and negative pads Similarly a leakage current path can exist from the package lead solder pads to the exposed die pad on the underside of the package as well as any solder pad on the PCB that would be connected to that exposed die pad during the reflow solder process Therefore it is strongly recommended that the PCB layout not include a solder pad in the region where the exposed die pad of the package will land It is sufficient to place PCB solder pads only where the package leads will be That region of the PCB where the exposed die pad will land must not have any solder pads traces or vias 2009 2010Cymbet Corporation Tel 1 763 633 1780 www cymbet com DS 72 02 RevA Page 3 of 5 EnerChip CBC012 Solid State Energy Storage When placing a silk screen on the PCB around the perimeter of the package place the silk screen outside of the package and all metal pads Failure to observe this precaution can result in package cracking during solder reflow due to the silk screen material interfering with the solder solidification process during cooling EC1 Figure 1 Improper PCB traces resulting in an Figure 2 Proper PCB traces precluding the undesirable parasitic leakage path formation of a parasitic leakage path For the CBC012 D5C the PCB layout of Figure 3 is recommended Note that there should not be a center pa
7. tance 25 C aoe Recoverable e ae per year 45 20 Se per year ae EEM 3 25 a ae a B T cycles to 80 of rated 50 depth of discharge 1000 capacity 4 1V charge voltage 40 C 10 depth of discharge 2500 50 depth of discharge Recharge Time to 80 of rated capacity Charge cycle 2 4 1V charge voltage Charge cycle 1000 Capacity 5OWUA discharge 25 C Le D Failure to cutoff the discharge voltage at 3 0V will result in EnerChip performance degradation cycles cycles minutes 2 Charging at 4 0V will charge the cell to approximately 70 of its rated capacity GT ypical pulse duration 20 milliseconds First month recoverable self discharge is 4 average a Storage temperature is for uncharged EnerChip Note All specifications contained within this document are subject to change without notice EnerChip Discharge Characteristics Typical Discharge Characteristics Discharge Rate Performance Cell Voltage V Discharge Capacity Ah i i t i i i i 1 i i i ti i i i i 8 10 12 1 10 100 Discharge Capacity uAh Discharge Current pA 2009 2010Cymbet Corporation Tel 1 763 633 1780 www cymbet com DS 72 02 RevA Page 2 of 5 EnerChip CBC012 Solid State Energy Storage Package Dimensions 6 pin DFN package code D5 m sgol G aes eYol U Fi te i I ENERCHIP CBC012 D5C 200941 La i
Download Pdf Manuals
Related Search