分析およ船子
Contents
1. SPCM AQRH IX 1 2000 Mcps 1 3000 35ns 500Q 2 5V 15ns TTL BNC 5 40C SPCM 4 SPCM AQ4C 4 APD 4 EU 2002 95EEC Restriction of the use of2. MOS 22 DIP Dual Inline Package SB TB L 25 m 50gm 128 1024 2500zm EE
3. Si InGaAs APD Si InGaAs APD APD 400nm 1100nm APD 0 5mm 3mm C30902 S V Ve V Vp
4. APD 14 DIL 100 C30950EH C30659 C30950EH C30919E C30950EH 2 HUV PIN MIL PRF 38534
5. PIN APD UV TST DIsthibuted Termmperature Sensing C30659 APD APD 4 InGaAs APD 2 50MHz 200MHz 2 C30659 LLAM APD APD C30659
6. APD APD C30659 TE LLAM Si APD XNZD Fl AAR BS m PMM0 000 MM WM 0 JUN00 mm A W nA pA Hz pF ns fW H2 V C30954EH 0 CS OE 0 ER EE NN 2 C30955EH ES 0 OO EO ON 2 5 265 C30956EH ES 3 UR R50 C0 SAO Sa SO a 2 0 2 15 24 0 600 10 07 MIN 5 08 0 200 13 97 0 550 _ 9 14 0 360 EXCELITAS TECHNOLOGIES Si APD UV APD
7. InGaAs 1100nm 1700nm 200m RN Ole 6 min max 830nm 900nm 1060nm TI me el ee i pi EC Ee EMH Ee EE BN EE C30817EH RE RN PR EO E00 KER 220 ON RS a TO 5 C30872EH 3 10 2 OM i OC 22 1 60 RE EO TO 8 C30884E 0 8 4 1 100 190 290 11 100 EC EE TO 5 C30902BH 0 5 9 0 15 289 07 PO A 3 RA TO 18 C30902BFCH 0 5 1 6 0 5 15 1858 82c5 070 50 0 60 3 FC C30902BSTH 0 5 OS 15 RN OE OR ME 3 ST C30902EH 0 5 1 6 0 5 15 2008 0U ES ON 2 bl EE 3 TO 18 C30902SH 0 5 a 1
8. C30626 900nm C30703 530nm APD X Si APD UV APD 6 RoHS
9. EE CELIT S TECHINOLOCGIES 2 0 1060nm Si APD 1060nm SI APD LIDAR YA 1060nm ccN RoHS 2 A W 300 400 600 800 1000 1200 1400 nm C30954EH C30955EH C30956EH nn i C30954EH C30955EH C30956EH 900nm APD 1060nm 40
10. 1OOkH a WI 0 MV 0626 20 2 280 EO EE RG RN 425 900nm 900mm C30703FH 10x10 16 10 120 2 2 25 690mW 30m C30739ECERH 56x56 20 50 0g ER a 5 430nm vs vs 80 20 340 380 420 460 500 600 700 800 9001000 1100 nm C30700 100 C30700 200 C30626 350 400 450 500 550 600 650 700 750 nm C0 101 0041 1 2 TEL 03 3258 1238 FAX 03 3258 5689 URL www klv co jp E mail toiawase klv co jp lt KLV CO LID
11. E CELITAS TECHNOLOCGIES EE eK SPCM WA 650nm 6596 SOMm 5V FC DA EU RoHS 4 SPCM SPCM AQRH 400nm 1060nm SPCM AQRH SLiK 180 m 650nm 65
12. 22 2224020 NSP 2 Si APD 2 LIDAR CA TSE HoHS nn APD C30927 APD C30985E 400nm 1000nm C30927 1 p 4 4 C30927EH 01 02 03 1060nm 900nm 800n
13. SINRIN AD InGaAsiAPEDE a 830mm 900nm 1060nm 50Q0 RI Ei Ee HH NN HH EE RA HO C30659 900 R5BH C30902 05 200 460 400 0 2 ee C30659 900 R8AH C30817 08 50 E220 3000 14 EC TO 8 C30659 1060 RBBH C30954 08 200 370 200 55 09 TO 8 C30659 1060 3AH C30956 3 50 450 280 55 09 1038 C30659 1550 RO08BH C30645 80um 200 90 1550nm 520 0 TO C30659 1550 R2AH C30645 200um 50 340 1550nm 130 09 TO 8 30919E GA007 9 1000 2 0 0 2 9W C30950EH C30817 0 8 5 220 560 EC 0 8 LLAM 1550 R2AH C30662 0 2 50 340 1550nmm 130 0 9 T0 8 LLAM 1060 R8BH C30954 0 8 200 370 0 HUV 1100BGH UV 100 5 1kHz 130MV W 0 Si 2 2 HUV 2000BH UV 215 5 4 1kHz 130MVW ER IN en JE INIAW22 5
14. 5V 2 5V Typ pF pF cm nJ cm pC pA RL1201 ME 0 0 0 0000 RL1202 O02 E20 SO ON 00008 0 RL1205 US 2000 20 0 0060 02 RL1210 28 7 OE SO IO 00000 02 Mu 91 i RL1502 14 4x104 50 20 100 000 0 4 i 500 0 239 20 100600 0 Cmin to 55 Cmax lt 1 25 Cmin to 85 Cmax 600 mV EE P CCD 25hm 50Hm 80 128 RL1201LGQ 711 RL1501LFQ 711 MR IN 0 256 RL1202LGQ 711 RL1502LFQ 711 50 512 RL1205LGQ 711 RL1505LFQ 711 1024 RL1210LGQ 711 0 250 350 450 550 650 750 850 950 1050 nm EC ELIT S TECHNOLOCGIES Si PIN APD InGaAs APD PIN APD Si PIN APD InGaAs APD nng
15. Si APD UV APD gh 0 C30739ECERH APD 400nm 700nm 5 430nm 60 LSO BGO APD PET C30626FH C30703FH SLAPD
16. 0C DTC 20C InGaAs APD ss min max 1550nm NE 200 EE 0 0 ED LR 0 UM8 SC ER CN CC C0 NE A NN CR OC OO EE 002 GA ES 0 ON MOCU SE CE SR A OM 0 0 2 TO 18 ATER CO CN CCO EE 20 0 5270 0 0 9 9 a 702 MM 10 90 0 0 89 B 5 TO 18 SOCEM SE 2 200 U9 200 5 a rN 2 OB 8 23 0 324 400 500 600 700 800 900 1000 1100 nm GC30902EH C30921EH C30902SH C30921SH 3 4 5 T0 8 T10 18 4 0 as en 13 97
17. 2 5mm 0 MHz HCMOS a 12 Fl IS 2ObU SO lm 2 300 1000nm L CMOS 300 1000nm L
18. certain Hazardous Substances in electrical and electronic equipment RoHS Pd ee Ns 6 ER 700nm Ni EE ER RR 8 SE eK RO RE EO SO CE CT ES SPCM AQRH 11 018 1000 65 25M 32 15 EGOEAGNEM CUO 00 50 0 SPCM AQRH 13 018 250 65 25M 32 15 IP MI NM LD 0 SPCM AQRH 14 0 18 100 6e65 25M 32 15 NH WGP SPCM AORH 15 0 18 50 65 25M 32 15 BC SPCM AORH 16 0 18 5 659 25M 32 0 SPCM AQ4C 500 60 gt 2M 50 30 0 500 0 209 MNO C30902SH TCC 0475 2500 gt 5 O EA C30902SH DTC 0475 350 gt 5 SS 1 C30902SH TC 0cC 2 C30902SH DTC 209 C le L CMOS 2 50 2 CMOS L 2
19. 5 SS CO MO SU MC 0 0 9 TO 18 C30916EH 1 5 3 3 100 315 490 22 80 BO 2 20 1 TO 5 C30921EH 25 UO UE 15 I SC OE MO Ot MC 3 OS C30921SH O25 Wil 0 5 EE 02 220 0 00 09 T0 18 C30954EH 0 8 2 2 50 ON A a ON 2 0 TU TO 5 C30955EH 5 3 2 100 315 490 24 100 1 TO 5 C30956EH 3 10 2 100 20100 20 8 1 OU 0 TO 8 EE CELIT S TECHINOLOCGIES 1 AR APD TE 1 5 MO SO i min max 830nm 900nm 1060nm iri im im a ND Sa A a NE AW TT AW AW pAyHz GOOZSGBKG OS 902 CR OSS 2 256 3 2 60 2 0 0 002 C309025HDTC MIO SN RO NN CN OT II 225 500 2500 0 IO80N EE II OO020 MO 2 C30954ETC 08 05 2 C30954EDTC 08 05 2 3 3 x I CR EAN 20 UI NE RE 0 MO G0955ETC 15 ls 2 IOUI 20 2 00 SE 2 02 1008g C30955E DTC 1 5 1 8 2 2 C30956ETC 3 7 10 7 7 100 315 490 24 100 70 0 05 _T0 8 ME NI MI MI 7 TC 1
20. m 50nm C30985E 25 APD 75um DP 0 C30927EH 01 4 Sa C30927EH 02 4 1 5 C30927EH03 4 RS C30985E 2 AA 0 0SEZ 100kHz MNO WW 0 OS 0 15 1060nm 25 0 5 1 3 33 1060nm 275 425 62 900nm ES 1 3 16 900nm 275425 55 800nm 25 0 5 1 3 9 800nm 275 425 31 900nm 1 a OUD 2 3 900nm 250 425 15 24 0 600 11 07 0 436 34 80 1 370 2 54 27 94 1 10 11 07 0 436 7 62 1 300
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