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Philips BGY148A User's Manual
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1. MDA206 5 PL W 4 400 MHz 440 MHz 3 2 1 0 25 0 25 50 75 100 Trib C Zs 2 50 Q Pp 2 MW Vs 4 8 V Tmp 25 C Fig 9 Load power as a function of mounting base temperature BGY 148A typical values 1998 May 13 Product specification BGY148A BGY148B MGD558 Hg 60 380 400 420 440 460 f MHz Zs 2 50 Q Pp 2 MW Vs 4 8 V PL 3 W Tmp 25 C Fig 8 Harmonics as a function of frequency BGY 148A typical values Philips Semiconductors HF amplifier modules MGD559 5 PL W 4 430 MHz 488 MHz 3 2 1 0 0 1 2 3 4 Zs 2 50 Q Pp 10 MW Vs 6 V Tm 25 C Fig 10 Load power as a function of control voltage BGY148B typical values Product specification BGY148A BGY148B MGD560 60 430 MHz o 488 MHz 40 20 0 0 1 2 3 4 PL W Zs 2 50 Q Pp 10 MW Vs 6 V Tm 25 C Fig 11 Efficiency as a function of load power BGY148B typical values MGD561 5 PL W 4 3 2 1 0 420 440 460 480 500 f MHz Zs Z 50 Q Pp 10 MW Vs 6 V Vo 3 5 V Tmp 25 C Fig 12 Load power as a function of frequency
2. iia gt 0 8 PP y 7 2 a 1 8 9 7 08 gt a 14 7 gt 19 78 MGK392 solder area Dimensions in mm Fig 18 SOT421A footprint 1998 May 13 9 Philips Semiconductors Product specification HF amplifier modules BGY148A BGY148B PACKAGE OUTLINE Ceramic single ended flat package 4 in line leads SOT421A DIMENSIONS mm are the original dimensions UNIT A b c D d E e 3 0 24 mm 26 2 0 one OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION ISSUE DATE SOT421A E 97 06 20 1998 May 13 10 Philips Semiconductors Product specification HF amplifier modules BGY148A BGY148B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later Product specification This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions a
3. 1412 Fax 82 2 709 1415 Malaysia No 76 Jalan Universiti 46200 PETALING JAYA SELANGOR Tel 60 3 750 5214 Fax 60 3 757 4880 Mexico 5900 Gateway East Suite 200 EL PASO TEXAS 79905 Tel 9 5 800 234 7381 For all other countries apply to Philips Semiconductors International Marketing amp Sales Communications Building BE p P O Box 218 5600 MD EINDHOVEN The Netherlands Fax 31 40 27 24825 O Philips Electronics N V 1998 a worldwide company Middle East see Italy Netherlands Postbus 90050 5600 PB EINDHOVEN Bldg VB Tel 31 40 27 82785 Fax 31 40 27 88399 New Zealand 2 Wagener Place C P O Box 1041 AUCKLAND Tel 64 9 849 4160 Fax 64 9 849 7811 Norway Box 1 Manglerud 0612 OSLO Tel 47 22 74 8000 Fax 47 22 74 8341 Pakistan see Singapore Philippines Philips Semiconductors Philippines Inc 106 Valero St Salcedo Village P O Box 2108 MCC MAKATI Metro MANILA Tel 63 2 816 6380 Fax 63 2 817 3474 Poland UI Lukiska 10 PL 04 123 WARSZAWA Tel 48 22 612 2831 Fax 48 22 612 2327 Portugal see Spain Romania see Italy Russia Philips Russia Ul Usatcheva 35A 119048 MOSCOW Tel 7 095 755 6918 Fax 7 095 755 6919 Singapore Lorong 1 Toa Payoh SINGAPORE 319762 Tel 65 350 2538 Fax 65 251 6500 Slovakia see Austria Slovenia see Italy South Africa S A PHILIPS Pty Ltd 195 215 Main Road Martindale 2092 JOHANNESBURG P O Box 7430 Johannesburg 2000 T
4. 553 5 PL W 400 MHz 4 440 MHz 3 2 1 0 0 1 2 3 4 Vc V Zs 2 50 Q Pp 10 MW Vs 6 V Tm 25 C Fig 3 Load power as a function of control voltage BGY148A typical values Product specification BGY148A BGY148B MGD554 60 o 440 MHz 400 MHz 40 20 0 0 1 2 3 4 Zs 2 50 Q Pp 10 MW Vs 6 V Tm 25 C Fig 4 Efficiency as a function of load power BGY 148A typical values MGD555 5 PL w TE 4 3 2 1 0 380 400 420 440 460 f MHz Zs Z 50 Q Pp 10 MW Vs 6 V Ve 3 5 V Tmp 25 C Fig 5 Load power as a function of frequency BGY 148A typical values MGD556 60 n LT TT 1 40 20 0 380 400 420 440 460 f MHz Zs 2 50 Q Pp 10 MW Vs 6 V PL 3 W Tmp 25 C Fig 6 Efficiency as a function of frequency BGY 148A typical values 1998 May 13 Philips Semiconductors HF amplifier modules MGD557 4 3 0 Vo VSWRin V 3 2 5 VSWRin 2 2 0 MC 1 1 5 0 1 0 380 400 420 440 460 f MHz Zs 2 50 Q Pp 10 MW Vs 6 V PL 3 W Tmb 25 C Fig 7 Control voltage and input VSWR as functions of frequency BGY 148A typical values
5. BGY148B typical values MGD562 60 n urt AT 40 20 0 420 440 460 480 500 f MHz Zs 2 50 Q Pp 10 MW Vs 6 V PL 3 W Tmb 25 C Fig 13 Efficiency as a function of frequency BGY148B typical values 1998 May 13 Product specification Philips Semiconductors HF amplifier modules 4 MGD563 3 0 Vo VSWRin V 3 2 5 2 Ved 2 0 VSWRin 1 1 5 0 1 0 420 440 460 480 500 f MHz Zs 2 50 Q Pp 10 MW Vs 6 V PL 3 W Tmp 25 C Fig 14 Control voltage and input VSWR as functions of frequency BGY148B typical values MDA205 5 PL W 4 430 MHz 3 488 MHz 2 1 0 25 0 25 50 75 100 Tmb C Zs 2 50 Q Pp 2 mW Vs 4 8 V Tmp 25 C Fig 16 Load power as a function of mounting base temperature BGY148B typical values 1998 May 13 BGY148A BGY148B MGD564 70 420 440 460 480 500 f MHz Zs 2 50 Q Pp 2 mW Vs 4 8 V PL 3 W Tmp 25 C Fig 15 Harmonics as a function of frequency BGY148B typical values Philips Semiconductors HF amplifier modules SOLDERING The indicated temperatures are those at the solder interfaces Advised solder types are types with a liquidus less than o
6. DISCRETE SEMICONDUCTORS DATA SHEET BGY148A BGY148B HF amplifier modules Product specification 1998 May 13 Supersedes data of 1997 Jul 14 Philips PHILIPS Semiconductors PH LI p Philips Semiconductors Product specification HF amplifier modules BGY148A BGY148B FEATURES e Single 6 V nominal supply voltage e 3 W output power e Easy control of output power by DC voltage e Silicon bipolar technology e Standby current less than 100 uA APPLICATIONS e Portable communication equipment operating in the 400 to 440 MHz and 430 to 488 MHz frequency ranges respectively DESCRIPTION The BGY148A and BGY148B are three stage UHF amplifier modules in a SOT421A package Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate The modules produce an output power of 3 W into a load of 50 Q with an RF drive power of 10 mW QUICK REFERENCE DATA RF performance at Tmb 25 C PINNING SOT421A DESCRIPTION 4 aE output Flange ground 1 2 3 4 Top view MSA483 Fig 1 Simplified outline SOT421A MODE OF f Vs OPERATION TYPE Zs ZL W dB Q LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 SYMBOL PARAMETER MAX UNIT DC supply voltage 8 5 V DC control voltage V input drive power mW gt l
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8. bove those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1998 May 13 11 Philips Semiconductors Argentina see South America Australia 34 Waterloo Road NORTH RYDE NSW 2113 Tel 61 2 9805 4455 Fax 61 2 9805 4466 Austria Computerstr 6 A 1101 WIEN P O Box 213 Tel 43 160 1010 Fax 43 160 101 1210 Belarus Hotel Minsk Business Center Bld 3 r 1211 Volodarski Str 6 220050 MINSK Tel 375 172 200 733 Fax 375 172 200 773 Belgium see The Netherlands Brazil see South America Bulgaria Philips Bulgaria Ltd Energoproject 15th floor 51 James Bourchier Blvd 1407 SOFIA Tel 359 2 689 211 Fax 359 2 689 102 Canada PHILIPS SEMICONDUCTORS COMPONENTS Tel 1 800 234 7381 China Hong Kong 501 Hong Kong Industrial Technology Centre 72 Tat Chee Avenue Kowloon Tong HONG
9. el 27 11 470 5911 Fax 27 11 470 5494 South America Al Vicente Pinzon 173 6th floor 04547 130 SAO PAULO SP Brazil Tel 55 11 821 2333 Fax 55 11 821 2382 Spain Balmes 22 08007 BARCELONA Tel 34 93 301 6312 Fax 34 93 301 4107 Sweden Kottbygatan 7 Akalla S 16485 STOCKHOLM Tel 46 8 5985 2000 Fax 46 8 5985 2745 Switzerland Allmendstrasse 140 CH 8027 ZURICH Tel 41 1 488 2741 Fax 41 1 488 3263 Taiwan Philips Semiconductors 6F No 96 Chien Kuo N Rd Sec 1 TAIPEI Taiwan Tel 886 2 2134 2865 Fax 886 2 2134 2874 Thailand PHILIPS ELECTRONICS THAILAND Ltd 209 2 Sanpavuth Bangna Road Prakanong BANGKOK 10260 Tel 66 2 745 4090 Fax 66 2 398 0793 Turkey Talatpasa Cad No 5 80640 GULTEPE ISTANBUL Tel 90 212 279 2770 Fax 90 212 282 6707 Ukraine PHILIPS UKRAINE 4 Patrice Lumumba str Building B Floor 7 252042 KIEV Tel 380 44 264 2776 Fax 380 44 268 0461 United Kingdom Philips Semiconductors Ltd 276 Bath Road Hayes MIDDLESEX UB3 5BX Tel 44 181 730 5000 Fax 44 181 754 8421 United States 811 East Arques Avenue SUNNYVALE CA 94088 3409 Tel 1 800 234 7381 Uruguay see South America Vietnam see Singapore Yugoslavia PHILIPS Trg N Pasica 5 v 11000 BEOGRAD Tel 381 11 625 344 Fax 381 11 635 777 Internet http www semiconductors philips com SCA60 All rights are reserved Reproduction in whole or in part is prohibited without the prior writ
10. oad power 3 5 W Tstg storage temperature Tmb operating mounting base temperature note1 Note 40 100 30 100 1 In order to control the mounting base temperature proper heatsinking of the underside of the device is required It is therefore advisable that the device is mounted on a printed circuit board with metallized through holes 1998 May 13 Philips Semiconductors Product specification HF amplifier modules BGY148A BGY148B CHARACTERISTICS Z3 2 50Q Pp 10 MW Vg 6 V Ve lt 3 5 V Tmb 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT frequency range BGY148A BGY148B total quiescent current control current adjust Vc for PL 3 W 500 EEE powergan sadustVoforPr 3W as efficiency adjust Vc for PL 3 W 46 adjust Vc for PL 3 W dBc third harmonic adjust Vc for PL 3 W dBc input VSWR adjust Vc for PL 3 W control range Vc 0 to 3 5 V stability Pp 5 to 20 mW Vs 5 to 8 5 V PL lt 3 5 W VSWR lt 4 1 through all phases ruggedness Vs 8 5 V adjust Vc for PL 3 5 W no degradation VSWR lt 4 1 through all phases MDA207 5 PL W 4 VSWR 1 1 3 I VSWR 3 1 2 1 0 0 20 40 60 80 100 Tmb C Vs 8 5 V Fig 2 Load power derating curves 1998 May 13 3 Philips Semiconductors HF amplifier modules MGD
11. r equal to 210 C Solder dots or solder prints must be large enough to wet the contact areas Soldering can be carried out using a conveyor oven a hot air oven an infrared oven or a combination of these ovens A double reflow process is permitted Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 C and damage the module The maximum allowed temperature is 250 C for 5 seconds The maximum ramp up is 10 C per second The maximum cool down is 5 C per second Cleaning The following fluids may be used for cleaning e Alcohol e Bio Act Terpene Hydrocarbon e Acetone Ultrasonic cleaning should not be used since this can cause serious damage to the product 1998 May 13 Product specification BGY148A BGY148B MGM159 100 Fig 17 Recommended reflow temperature profile Philips Semiconductors Product specification HF amplifier modules BGY148A BGY148B 22 6 gt DETAIL gt 2 ja 0 8 0 4 y i lt 17 2 1 5 gt F i 8 45 1 v 2 9 2 7 0 6 TE i n EE teke ni 4 ME t 2 4 lg gt 2 6 a 7 48 I 15 1 DETAIL Ei 0 5 9 20 18 gt 0 7 lL MGK391 footprint metallization solder area 21 8
12. ten consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 125108 00 03 pp12 Philips Semiconductors Date of release 1998 May 13 Document order number 9397 750 03849 Lett make things better S PHILIPS
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