Kingston Technology ValueRAM 16GB DDR3-1333
Contents
1. C lt TCASE lt 95 C e Asynchronous Reset e PCB Height 1 180 80 00mm double sided component kingston com kingston TECHINOLOGY ei Value SPECIFICATIONS CL IDD 9 cycles Row Cycle Time tRCmin 49 5ns min Refresh to Active Refresh 160ns mim Command Time tRFCmin Row Active Time tRASmin 36ns min Maximum Operating Power 1 35V 5 040 W 1 50V 6 006 W 94V 0 0 C to 85 C 55 C to 100 C UL Rating Operating Temperature Storage Temperature Power will vary depending on the SDRAM and Register PLL used Continued gt gt Document No VALUERAM1220 001 A00 05 15 12 Page 1 continued ValueRAM MODULE DIMENSIONS TOLL OO units millimeters ND O ES oO cO P GE Hi a Se e 2 K E gt eae SS N S 3 D z 5 gt R S CO 30 00 O SE 20 60x4 24 Ba 21 80x2 e 18 80x2 15 80x2 J L R 0 65 MAX TYPICAL 11 00x2 L 8 00x2 3 80 S _ f 0 000 an L t g noeh CHAMFER 0 50 X 45 DEG 4 PLACES OOo CO LO LD DNN r GE D LO ro kingston com Document No VALUERAM1220 001 A00 Page 22. Memory Module Specifications KVR13LR9S4K4 16 16GB 4GB 512M x 72 Bit x 4 pcs PC3 10600 CL9 Registered w Parity 240 Pin DIMM Kit DESCRIPTION ValueRAM s KVR13LR9S4K4 16 is a kit of four 512M x 72 bit 4GB DDR8L 1333 CL9 SDRAM Synchronous DRAM low voltage registered w parity 1Rx4 ECC memory modules based on eighteen 512M x 4 bit FBGA components Total kit capacity is 16GB The SPDs are programmed to JEDEC standard latency DDR3 1333 timing of 9 9 9 at 1 35V and 1 5V Each 240 pin DIMM uses gold contact fingers The electrical and mechanical specifications are as follows FEATURES e JEDEC standard 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V Power Supply e VDDQ 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V e 667MHz fCK for 1833Mb sec pin e 8 independent internal bank e Programmable CAS Latency 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e Programmable CAS Write Latency CWL 7 DDR3 1333 e 8 bit pre fetch e Burst Length 8 Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 e On Die Termination using ODT pin e On DIMM thermal sensor Grade B e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85
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